CN114606570A - Preparation method of cesium-hafnium-chlorine scintillation crystal - Google Patents
Preparation method of cesium-hafnium-chlorine scintillation crystal Download PDFInfo
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- CN114606570A CN114606570A CN202210076428.9A CN202210076428A CN114606570A CN 114606570 A CN114606570 A CN 114606570A CN 202210076428 A CN202210076428 A CN 202210076428A CN 114606570 A CN114606570 A CN 114606570A
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- 239000013078 crystal Substances 0.000 title claims abstract description 78
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- -1 cesium-hafnium-chlorine Chemical compound 0.000 title abstract description 5
- 239000000243 solution Substances 0.000 claims abstract description 59
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000003756 stirring Methods 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 239000002243 precursor Substances 0.000 claims abstract description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 229910003865 HfCl4 Inorganic materials 0.000 claims abstract description 6
- 239000002253 acid Substances 0.000 claims abstract description 5
- 239000003929 acidic solution Substances 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000001914 filtration Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000012855 volatile organic compound Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 4
- 239000010453 quartz Substances 0.000 abstract description 2
- 238000004064 recycling Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000843 powder Substances 0.000 description 26
- 229920006395 saturated elastomer Polymers 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 239000011148 porous material Substances 0.000 description 6
- 238000004090 dissolution Methods 0.000 description 5
- 229910001502 inorganic halide Inorganic materials 0.000 description 5
- 238000010583 slow cooling Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/08—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by cooling of the solution
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
- G01T1/2023—Selection of materials
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- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
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Abstract
The invention relates to a preparation method of a cesium-hafnium-chlorine scintillation crystal, and relates to the technical field of scintillation crystal materials. The Cs2HfCl6The preparation method of the scintillation crystal comprises the following steps of S1 firstly CsCl and HfCl4Adding the solution into an acidic solution, stirring and heating to obtain a precursor solution; the acid solution is hydrochloric acid solution; s2, heating the precursor solution, and then cooling and growing in steps to obtain the Cs2HfCl6And (4) scintillation crystals. Cs of the present invention2HfCl6Compared with the conventional Bridgman growth method, the preparation method of the scintillation crystal has the advantages of low cost, no need of equipment such as a vacuum quartz crucible and the like, no need of high temperature, simplicity and easiness in operation, low raw material cost, high raw material utilization rate and capability of recycling the solution.
Description
Technical Field
The invention relates to the technical field of scintillation crystal materials, in particular to a preparation method of a cesium hafnium chloride scintillation crystal.
Background
The scintillation crystal is an energy conversion material, can convert energy into ultraviolet light or visible light after absorbing high-energy rays or particles, can detect high-energy rays or high-energy particles such as X rays, gamma rays, neutrons and the like by using a scintillation counter which is a core component, and is widely applied to the fields of medical imaging, high-energy physics, industrial detection and the like.
Cs2HfCl6The scintillator is a novel inorganic halide scintillator, can detect gamma rays, and is expected to become a high-cost-performance scintillator for a gamma ray detector due to the characteristics of high light output, high energy resolution and the like in an undoped state.
The inorganic halide scintillator has a relatively low melting point, and the traditional preparation method is a Bridgman method, Cs2HfCl6The crystal can be prepared only by a Bridgman method at present, and the preparation method is very single. Synthetic Cs2HfCl6CsCl powder and HfCl in the starting material of the crystal4The powder is insoluble in common organic solvents such as DMSO, GBL, DMF, and the like, and the preparation conditions are harsh and the process is complex.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the problems of harsh preparation conditions, complex process and single preparation method in the prior art.
In order to solve the technical problems, the invention provides a preparation method of a cesium-hafnium-chlorine scintillation crystal. The invention provides a Cs with simple operation2HfCl6Crystal growth method, namely cooling crystallization method. The growth method comprises mixing the powder with solvent to obtain high-concentration clear solution, heating for dissolving, stirring, filtering, and cooling to obtain Cs with regular shape2HfCl6And (4) crystals.
It is a first object of the present invention to provide a Cs2HfCl6Process for preparing scintillation crystals, kitComprises the following steps of (a) carrying out,
s1, mixing CsCl and HfCl4Adding the solution into an acidic solution, stirring and heating to 75-85 ℃ to obtain a precursor solution; the acid solution is hydrochloric acid solution;
s2, heating the precursor solution obtained in the step S1, and then cooling and growing in steps to obtain the Cs2HfCl6A scintillation crystal; the step-by-step cooling is divided into two times, and the temperature is cooled to 35-45 ℃ at the rate of 4-6 ℃/h for one time; the secondary cooling is carried out at the rate of 0.1-2 ℃/h to 25-30 ℃.
In one embodiment of the invention, to suppress HfCl4By hydrolysis reaction of (3) to HfCl4The solution is required to be carried out in an acid environment under specific conditions, and the dilute hydrochloric acid is easily dissolved CsCl and HfCl due to controllable solvent concentration4And no impurity is introduced, so a dilute hydrochloric acid solvent is adopted.
In one embodiment of the invention, in order to prevent the supersaturation degree of the solution from being too high in the cooling process, and avoid the phenomenon that a plurality of crystals are separated out, and the crystal quality of the crystals is influenced by too fast growth rate, the solution is cooled in steps, and the solution is cooled at an initial fast speed and is slowly cooled in a crystal growth temperature interval.
In one embodiment of the present invention, in the step of S1, the CsCl and HfCl are4In a molar ratio of 2 to 3: 1.
in one embodiment of the present invention, in the step of S1, the molar concentration of the acidic solution is 1.06-2.15 mol/L.
In one embodiment of the invention, in the step S1, the rotation speed of the stirring is 400-800 r/min; the stirring time is 4-12 h.
In an embodiment of the present invention, in the step S1, a step of filtering the obtained precursor solution is further included, and the pore size of the filter for filtering is 1 to 5 μm.
In one embodiment of the present invention, in the step of S2, the heating is 55-65 ℃ for 30-90 min.
In one embodiment of the present invention, the growth time is 5 to 15 days in the step of S2.
In one embodiment of the present invention, the method further comprises the step of subjecting the Cs to2HfCl6And (5) carrying out air gun cleaning on the scintillation crystal.
In one embodiment of the invention, the gas of the air gun is nitrogen.
It is a second object of the present invention to provide a Cs prepared by the method2HfCl6Scintillation crystal, said Cs2HfCl6The length and width of the scintillation crystal are 4-10mm respectively, and the thickness is 2-5 mm.
Compared with the prior art, the technical scheme of the invention has the following advantages:
compared with the conventional Bridgman growth method, the preparation method has the advantages of low cost, no need of equipment such as a vacuum quartz crucible and the like, no need of high temperature, simplicity and easiness in operation, low raw material cost, high raw material utilization rate and capability of recycling the solution.
Drawings
In order that the present disclosure may be more readily and clearly understood, reference is now made to the following detailed description of the present disclosure taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a diagram showing the growth of a crystal in example 1 of the present invention.
FIG. 2 is a crystal diagram of example 1 of the present invention.
FIG. 3 is a graph showing the growth of crystals of comparative example 1 of the present invention.
FIG. 4 is a graph showing the growth of a crystal of comparative example 2 of the present invention.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
Example 1
Cs (volatile organic Compounds)2HfCl6The preparation method of the scintillation crystal specifically comprises the following steps:
(1) the mass ratio of the added substances is 2: 1 CsCl powder and HfCl with purity of 99.9%4Adding the powder with the weight of 2.70g and 2.56g into a flat-bottom transparent glass bottle, adding 6mL of dilute hydrochloric acid with the molar concentration of 1.06mol/L into the flat-bottom transparent glass bottle, stirring and heating the mixture on a magnetic stirrer at the temperature of 80 ℃ and the rotating speed of 600r/min, and stirring for 8 hours to completely dissolve the powder until the powder is saturated; after dissolution, the solution was filtered through a filter having a pore diameter of 2 μm to obtain a precursor solution for growing crystals.
(2) Placing the saturated crystal growth solution in the step (1) in an oil bath pan for slow cooling, wherein the initial temperature of the oil bath is 60 ℃, the temperature is reduced to 40 ℃ at the speed of 5 ℃/h, then the temperature is reduced to 28 ℃ at the speed of 1 ℃/h, seed crystals are separated out from the solution, the temperature of the oil bath pan is kept at 28 ℃, the growth time is 5 days, inorganic halide single crystal with the length and width of 4mm and the thickness of 2mm is grown, and the Cs is taken out2HfCl6Drying the residual growth solution on the surface of the crystal by a nitrogen gun to obtain Cs2HfCl6And (4) scintillation crystals.
FIG. 1 is a diagram showing the growth process of the crystal of example 1, from which CsCl powder and HfCl were observed4The powder can stably combine to grow Cs in the dilute hydrochloric acid solution environment2HfCl6And (4) crystals.
FIG. 2 is a photograph showing Cs produced from the crystal grown in example 12HfCl6The crystal has a square shape and is transparent inside.
Example 2
Cs (volatile organic Compounds)2HfCl6The preparation method of the scintillation crystal specifically comprises the following steps:
(1) the mass ratio of the added substances is 2: 1 CsCl powder and HfCl with purity of 99.9%4Adding the powder with the weight of 2.70g and 2.56g into a flat-bottom transparent glass bottle, adding 8mL of dilute hydrochloric acid with the molar concentration of 2.05mol/L into the flat-bottom transparent glass bottle, stirring and heating the mixture on a magnetic stirrer at the temperature of 80 ℃ and the rotating speed of 600r/min, and stirring for 8 hours to completely dissolve the powder until the powder is saturated; after dissolution, the solution was filtered through a filter having a pore diameter of 2 μm to obtain a precursor solution for growing crystals.
(2) Placing the saturated crystal growth solution in the step (1) in an oil bath pan for slow cooling, wherein the initial temperature of the oil bath is 60 ℃, the temperature is reduced to 40 ℃ at the speed of 5 ℃/h, then the temperature is reduced to 25 ℃ at the speed of 1 ℃/h, seed crystals are separated out from the solution, the temperature of the oil bath pan is kept at 25 ℃, the growth time is 5 days, inorganic halide single crystal with the length and width of 6mm and the thickness of 3mm is grown, and the Cs is taken out2HfCl6Drying the residual growth solution on the surface of the crystal by a nitrogen gun to obtain Cs2HfCl6And (4) scintillation crystals.
Example 3
Cs (volatile organic Compounds)2HfCl6The preparation method of the scintillation crystal specifically comprises the following steps:
(1) the mass ratio of the added substances is 3: 1 CsCl powder and HfCl with purity of 99.9%4Adding 4.05g and 2.56g of powder into a flat-bottom transparent glass bottle, adding 7mL of dilute hydrochloric acid with the molar concentration of 2.0mol/L into the flat-bottom transparent glass bottle, stirring and heating the mixture on a magnetic stirrer at the temperature of 80 ℃ and the rotating speed of 600r/min, and stirring for 8 hours to completely dissolve the powder until the powder is saturated; after dissolution, the solution was filtered through a filter having a pore diameter of 2 μm to obtain a precursor solution for growing crystals.
(2) Placing the saturated crystal growth solution in the step (1) in an oil bath pan for slow cooling, wherein the initial temperature of the oil bath is 60 ℃, the temperature is reduced to 40 ℃ at the speed of 5 ℃/h, then the temperature is reduced to 25 ℃ at the speed of 1 ℃/h, seed crystals are separated out from the solution, the temperature of the oil bath pan is kept at 25 ℃, the growth time is 5 days, inorganic halide single crystal with the length and width of 6mm and the thickness of 3mm is grown, and the Cs is taken out2HfCl6Drying the residual growth solution on the surface of the crystal by a nitrogen gun to obtain Cs2HfCl6And (4) scintillation crystals.
Comparative example 1
Basically the same as example 1, except that the temperature for preparing the precursor solution is 60 ℃, the method specifically comprises the following steps:
(1) the mass ratio of the added substances is 2: 1 CsCl powder and HfCl with purity of 99.9%4Powders weighing 2.70g and 2.56g, respectively, were added to a flat bottom clear glass bottleAdding 6mL of dilute hydrochloric acid with the molar concentration of 1.06mol/L into the solution, stirring and heating the solution on a magnetic stirrer at the temperature of 60 ℃ and the rotating speed of 600r/min for 8 hours to completely dissolve the solution until the solution is saturated; after dissolution, the solution was filtered through a filter having a pore diameter of 2 μm to obtain a precursor solution for growing crystals.
(2) And (2) placing the saturated crystal growth solution in the step (1) in an oil bath pot for slow cooling, wherein the initial temperature of the oil bath is 60 ℃, the temperature is reduced to 40 ℃ at the speed of 5 ℃/h, then the temperature is reduced to 25 ℃ at the speed of 1 ℃/h, seed crystals are separated out from the solution, the temperature of the oil bath pot is kept at 25 ℃, the growth time is 5 days, and dendritic crystals are separated out from the solution.
FIG. 3 shows the results obtained in comparative example 1. Since CsCl and HfCl were used at this experimental dose4The powder was fully dissolved in the solvent at a temperature of 50 c, so comparative example 1 was followed by heating the vessel to 60 c to prepare the precursor solution, but this solution then precipitated dendrites during growth, due to the lower temperature not allowing the solution to react sufficiently.
Comparative example 2
Substantially the same as example 1 except that CsCl powder and HfCl were used4The quantitative ratio of the powder material is 4: the method specifically comprises the following steps:
(1) the mass ratio of the added substances is 4: CsCl powder and HfCl with purity of 1 both 99.9%4Adding the powder with the weight of 5.40g and 2.56g into a flat-bottom transparent glass bottle, adding 8mL of dilute hydrochloric acid with the molar concentration of 1.06mol/L into the flat-bottom transparent glass bottle, stirring and heating the mixture on a magnetic stirrer at the temperature of 80 ℃ and the rotating speed of 600r/min, and stirring for 8 hours to completely dissolve the powder until the powder is saturated; after dissolution, the solution was filtered through a filter having a pore diameter of 2 μm to obtain a precursor solution for growing crystals.
(2) And (2) placing the saturated crystal growth solution in the step (1) in an oil bath pan for slow cooling, wherein the initial temperature of the oil bath is 60 ℃, the temperature is reduced to 40 ℃ at the speed of 5 ℃/h, then the temperature is reduced to 25 ℃ at the speed of 1 ℃/h, seed crystals are separated out from the solution, the temperature of the oil bath pan is kept at 25 ℃, the growth time is 5 days, and the solution separates out large semitransparent crystals.
FIG. 4 is a graph of comparative example 2To obtain crystals, in order to make HfCl4Effectively participate in the nucleation process of the crystal and avoid the existence of Hf easy to hydrolyze in the crystal4+Ion, we tried to equip with excess CsCl, but the resulting crystals were irregular in shape and not highly crystalline due to the presence of CsCl component in the grown crystals, due to the excess CsCl alone participating in the nucleation process.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the spirit or scope of the invention.
Claims (10)
1. Cs (volatile organic Compounds)2HfCl6A method for preparing a scintillation crystal comprising the steps of,
s1, adding CsCl and HfCl4Adding the solution into an acidic solution, stirring and heating to 75-85 ℃ to obtain a precursor solution; the acid solution is hydrochloric acid solution;
s2, heating the precursor solution obtained in the step S1, and then cooling and growing in steps to obtain the Cs2HfCl6A scintillation crystal; the step-by-step cooling is divided into two times, and the temperature is cooled to 35-45 ℃ at the rate of 4-6 ℃/h for one time; the secondary cooling is carried out at the rate of 0.1-2 ℃/h to 25-30 ℃.
2. The Cs of claim 12HfCl6A method for producing a scintillator crystal, characterized in that, in the step S1, CsCl and HfCl are present4In a molar ratio of 2 to 3: 1.
3. the Cs of claim 12HfCl6The method for preparing scintillation crystal is characterized in that in the step of S1, the molar concentration of the acid solution is 1.06-2.15 mol/L.
4. The Cs of claim 12HfCl6The preparation method of the scintillation crystal is characterized in that in the step S1, the rotation speed of the stirring is 400-800 r/min; the stirring time is 4-12 h.
5. The Cs of claim 12HfCl6The preparation method of the scintillation crystal is characterized by further comprising the step of filtering the obtained precursor solution in the step of S1, wherein the aperture of the filter for filtering is 1-5 μm.
6. The Cs of claim 12HfCl6The preparation method of the scintillation crystal is characterized in that in the step S2, the heating is carried out for 30-90min at 55-65 ℃.
7. The Cs of claim 12HfCl6The method for producing a scintillation crystal is characterized in that, in the step S2, the growth time is 5 to 15 days.
8. The Cs of claim 12HfCl6The preparation method of the scintillation crystal is characterized by also comprising the step of adding the Cs2HfCl6And (5) carrying out air gun cleaning on the scintillation crystal.
9. The Cs of claim 82HfCl6The preparation method of the scintillation crystal is characterized in that the gas of the gas gun is nitrogen.
10. Cs produced by the method of any one of claims 1 to 92HfCl6Scintillation crystal, characterized in that said Cs2HfCl6The length and width of the scintillation crystal are 4-10mm respectively, and the thickness is 2-5 mm.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170038483A1 (en) * | 2015-08-06 | 2017-02-09 | Lawrence Livermore National Security, Llc | Scintillators having the k2ptcl6 crystal structure |
| CN110408993A (en) * | 2019-06-29 | 2019-11-05 | 宁波大学 | A kind of Cs for X-ray detection2AgBiBr6The preparation method of double-perovskite crystal |
| CN112048764A (en) * | 2020-08-17 | 2020-12-08 | 南京航空航天大学 | Zero-dimensional Cs3Cu2I5Perovskite scintillation crystal and application thereof |
| CN113403071A (en) * | 2021-06-18 | 2021-09-17 | 河北工业大学 | Sb3+Vacancy-doped double perovskite fluorescent powder and preparation method and application thereof |
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- 2022-01-24 CN CN202210076428.9A patent/CN114606570A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170038483A1 (en) * | 2015-08-06 | 2017-02-09 | Lawrence Livermore National Security, Llc | Scintillators having the k2ptcl6 crystal structure |
| CN110408993A (en) * | 2019-06-29 | 2019-11-05 | 宁波大学 | A kind of Cs for X-ray detection2AgBiBr6The preparation method of double-perovskite crystal |
| CN112048764A (en) * | 2020-08-17 | 2020-12-08 | 南京航空航天大学 | Zero-dimensional Cs3Cu2I5Perovskite scintillation crystal and application thereof |
| CN113403071A (en) * | 2021-06-18 | 2021-09-17 | 河北工业大学 | Sb3+Vacancy-doped double perovskite fluorescent powder and preparation method and application thereof |
Non-Patent Citations (2)
| Title |
|---|
| 张明荣: "非氟卤化物闪烁晶体的研究现状和发展趋势", 《人工晶体学报》, vol. 49, no. 5, pages 753 - 770 * |
| 成双良等: "Cs2HfCl6 和Cs2HfCl6:Tl 晶体的生长、光学和闪烁性能研究", 《人工晶体学报》, vol. 50, no. 5, pages 803 - 808 * |
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