CN114606004A - Narrow-linewidth red, green and blue light CdZnSe/ZnSe quantum dot and preparation method thereof - Google Patents

Narrow-linewidth red, green and blue light CdZnSe/ZnSe quantum dot and preparation method thereof Download PDF

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CN114606004A
CN114606004A CN202210360099.0A CN202210360099A CN114606004A CN 114606004 A CN114606004 A CN 114606004A CN 202210360099 A CN202210360099 A CN 202210360099A CN 114606004 A CN114606004 A CN 114606004A
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金肖
白锦科
李清华
张婷婷
黄小月
李栋宇
黄贞
徐兵
王凛峰
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Lingnan Normal University
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Abstract

The invention relates to the technical field of semiconductor quantum dots, in particular to a CdZnSe/ZnSe quantum dot with narrow line widths of red, green and blue light and a preparation method thereof. The preparation method comprises the following steps: (1) mixing cadmium oxide, hard anhydrous zinc acetate, oleic acid and trioctylamine, heating and vacuumizing, then filling nitrogen, and mixing the mixture with the Se precursor A to obtain CdZnSe seeds; (2) mixing the CdZnSe seed with the Se precursor B, and performing secondary growth of the CdZnSe seed to obtain a CdZnSe crystal nucleus; (3) and mixing the CdZnSe crystal nucleus, zinc stearate, the Se precursor B and dodecanoic acid, and then reacting to finish the coating of the ZnSe outer shell layer. The high-quality red, green and blue light CdZnSe/ZnSe quantum dots prepared by the method respectively show fluorescence half-peak widths of 16.1nm, 16.5nm and 11 nm.

Description

Narrow-linewidth red, green and blue light CdZnSe/ZnSe quantum dot and preparation method thereof
Technical Field
The invention relates to the technical field of semiconductor quantum dots, in particular to a CdZnSe/ZnSe quantum dot with narrow line widths and a preparation method thereof.
Background
Quantum dots, as novel luminescent materials, are widely used in optoelectronic displays and lighting due to their excellent optical properties, such as continuously tunable emission spectra, high fluorescence quantum yields, and high color purity. Compared with InP and CuInS without cadmium in the mature quantum dot system at present2The CdSe-based quantum dots have absolute advantages in high fluorescence quantum yield and narrow line width in the aspect of an isoquantum dot system. At present, Cd-based quantum dots generally have fluorescence quantum yield close to 100%, and the emission line width of the Cd-based quantum dots needs to be further reduced.
The emission line width characteristics directly depend on the morphology and size distribution of the quantum dots. The emission line widths of the existing red, green and blue light quantum dots are mostly limited to about 20nm, and the emission line widths of the quantum dots need to be continuously optimized aiming at the aspects of quantum dot lasers, special light sources and the like. Aiming at the research of the quantum dots with narrow line width, most researches mainly realize the control of the size and the appearance of the quantum dots by a cladding method, and the method is mainly technically characterized in that a crystal face with a dominant ligand preferentially grows, low-concentration slow cladding, ion catalysis and the like, is limited by nonuniformity of the size of an initial crystal nucleus, and the cladding method is often difficult to further reduce the emission line width of the quantum dots. At present, few researches are carried out on the control of the crystal nucleus morphology, particularly by finely regulating and controlling reaction conditions, such as temperature characteristics, precursor reaction activity and a common dominant influence mechanism of the temperature characteristics and the precursor reaction activity; the fine research of the complex crystal nucleus growth mechanism is helpful to further reduce the emission line width of the quantum dots, which is of great significance for the application of the quantum dots in the aspects of high-level display and special light sources.
Disclosure of Invention
The invention aims to provide CdZnSe/ZnSe quantum dots with narrow line widths and red, green and blue light and a preparation method thereof, so as to solve the problems in the prior art.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a preparation method of CdZnSe/ZnSe quantum dots with narrow line widths, which comprises the following steps:
(1) mixing cadmium oxide, hard anhydrous zinc acetate, oleic acid and trioctylamine, heating and vacuumizing, then filling nitrogen, and mixing the mixture with the Se precursor A to obtain CdZnSe seeds;
(2) mixing the CdZnSe seeds with the Se precursor B, and carrying out secondary growth of the CdZnSe seeds to obtain CdZnSe crystal nuclei;
(3) and mixing the CdZnSe crystal nucleus, zinc stearate, the Se precursor B and dodecanoic acid, and then reacting to finish the coating of the ZnSe outer shell layer.
Preferably, in the step (1), when the quantum dots are red light quantum dots, the Se precursor a contains Se powder, tri-n-octylphosphine and trioctylamine, and the molar ratio of the Se powder to the tri-n-octylphosphine to the trioctylamine is 1:1: 0.4-0.6;
when the quantum dots are green light quantum dots, the Se precursor A contains Se powder, tributylphosphine and trioctylamine, and the molar ratio of the Se powder to the tributylphosphine to the trioctylamine is 1:0.8: 0.4-0.6;
when the quantum dots are blue light quantum dots, the Se precursor A contains Se powder and trioctylamine, and the molar ratio of the Se powder to the trioctylamine is 1: 3-5.
Preferably, the molar volume ratio of the cadmium oxide, the oleic acid and the trioctylamine in the step (1) is 0.3-0.5 mol: 7-9L: 13-17L.
Preferably, in the step (1), when the quantum dots are red light quantum dots, the molar ratio of the cadmium oxide to the hard anhydrous zinc acetate is 1: 14-16; when the quantum dots are green light quantum dots, the molar ratio of the cadmium oxide to the hard anhydrous zinc acetate is 1: 11-13; when the quantum dots are blue light quantum dots, the molar ratio of the cadmium oxide to the hard anhydrous zinc acetate is 1: 5 to 7.
Preferably, the heating temperature in the step (1) is 145-155 ℃, the mixing temperature of the mixture and the Se precursor A is 295-305 ℃, and the synthesis time of the CdZnSe seeds is 7-9 min;
the volume ratio of the mixture to the Se precursor A is 4-6: 1.
Preferably, in the step (2), when the quantum dots are red light quantum dots, the Se precursor B contains Se powder and tri-n-octylphosphine in a molar volume ratio of 1mol: 0.9-1.1L;
when the quantum dots are green light quantum dots, the Se precursor B contains Se powder and tributylphosphine in a molar volume ratio of 1mol: 0.4-0.6L;
when the quantum dots are blue light quantum dots, the Se precursor B contains Se powder and trioctylamine, and the molar ratio of the Se powder to the trioctylamine is 1: 3-5.
Preferably, the mixing process of the CdZnSe seeds and the Se precursor B is as follows: cooling the CdZnSe seeds to room temperature at a speed of 15-25 ℃/min, then heating at a speed of 4-6 ℃/min, starting to dropwise add the Se precursor B when the temperature reaches 235-245 ℃, stopping dropwise adding after the temperature rises to 315-325 ℃, keeping the temperature for 9-11 min, cooling to room temperature at a speed of 10-15 ℃/min, and repeating for 2-3 times; the dropping speed of the Se precursor B is 2.8-3.2 mL/h.
Preferably, the reaction temperature in the step (3) is 255-265 ℃, the reaction time is 25-35 min, and the mixing of the CdZnSe crystal nucleus, the zinc stearate, the Se precursor B and the dodecanoic acid is to mix the CdZnSe crystal nucleus with the zinc stearate and simultaneously dropwise add the Se precursor B and the dodecanoic acid.
Preferably, the dropping rate of the Se precursor B in the step (3) is 1.8-4.2 mL/h, and the dropping rate of the dodecanoic acid is 0.4-0.6 mL/h;
the molar ratio of the CdZnSe crystal nucleus, the zinc stearate, the Se precursor B and the dodecanoic acid is 1:104:104:4～6*10-3。
The invention also provides the CdZnSe/ZnSe quantum dot with narrow line widths, which is prepared by the preparation method.
According to the technical scheme, compared with the prior art, the invention has the following beneficial effects:
the invention is based on a ternary alloy CdZnSe system, and realizes the three-primary-color quantum dot material with narrower line width by finely regulating and controlling the reaction conditions of quantum dot synthesis. The invention accurately controls the appearance uniformity of the quantum dots, and greatly reduces the emission line width; through the cyclic change of temperature and the matching use of anion precursors in different forms, the ion exchange rate is accurately regulated, and finally prepared high-quality red, green and blue light CdZnSe/ZnSe quantum dots respectively show fluorescence half-peak widths of 16.1nm, 16.5nm and 11 nm.
In addition, by reducing the reaction temperature and adding lauric acid in a certain proportion, the ion exchange is inhibited, the effective coating of a ZnSe outer shell layer is ensured, the surface defects of the nucleation quantum dots are further modified, the overlapping of electron and hole wave functions is promoted, and the high fluorescence quantum yield close to 100% is obtained. And an excellent alternative material is provided for further improving the display color purity of the quantum dots, expanding the application of special light sources and the like.
Drawings
Fig. 1 is an Absorption (absorbance) and emission (PL) spectrum of the CdZnSe/ZnSe quantum dots prepared in examples 1 to 3 and a corresponding transmission electron microscope map, in which (a) is the CdZnSe/ZnSe quantum dot of red light, (b) is the CdZnSe/ZnSe quantum dot of green light, and (c) is the CdZnSe/ZnSe quantum dot of blue light, and a scale in the transmission electron microscope map is 50 nm.
Detailed Description
The invention provides a preparation method of CdZnSe/ZnSe quantum dots with narrow line widths, which comprises the following steps:
(1) mixing cadmium oxide, hard anhydrous zinc acetate, oleic acid and trioctylamine, heating and vacuumizing, then filling nitrogen, and mixing the mixture with the Se precursor A to obtain CdZnSe seeds;
(2) mixing the CdZnSe seeds with the Se precursor B, and carrying out secondary growth of the CdZnSe seeds to obtain CdZnSe crystal nuclei;
(3) and mixing the CdZnSe crystal nucleus, zinc stearate, the Se precursor B and dodecanoic acid, and then reacting to finish the coating of the ZnSe outer shell layer.
In the invention, in the step (1), when the quantum dots are red light quantum dots, the Se precursor A contains Se powder, tri-n-octylphosphine and trioctylamine, and the molar ratio of the Se powder to the tri-n-octylphosphine to the trioctylamine is 1:1: 0.4-0.6, preferably 1:1: 0.45-0.55;
when the quantum dots are green light quantum dots, the Se precursor A contains Se powder, tributylphosphine and trioctylamine, and the molar ratio of the Se powder to the tributylphosphine to the trioctylamine is 1:0.8: 0.4-0.6, preferably 1:0.8: 0.45-0.55;
when the quantum dots are blue light quantum dots, the Se precursor A contains Se powder and trioctylamine, and the molar ratio of the Se powder to the trioctylamine is 1: 3-5, preferably 1: 4-5.
In the invention, when preparing red light quantum dots or green light quantum dots, and mixing the mixture of cadmium oxide, hard anhydrous zinc acetate, oleic acid and trioctylamine with the Se precursor A, the Se precursor A is heated to 245-255 ℃, and preferably 248-252 ℃.
In the invention, when the blue light quantum dots are prepared, the mixture of cadmium oxide, hard anhydrous zinc acetate, oleic acid and trioctylamine is mixed with the Se precursor A, and the Se precursor A is heated to 195-205 ℃, preferably 199-201 ℃.
In the invention, the molar volume ratio of the cadmium oxide, the oleic acid and the trioctylamine in the step (1) is preferably 0.3-0.5 mol: 7-9L: 13 to 17L, more preferably 0.3 to 0.4 mol: 7-8L: 14 to 16L, more preferably 0.4 mol: 8L: 15L.
In the present invention, in the step (1), when the quantum dots are red light quantum dots, the molar ratio of the cadmium oxide to the hard anhydrous zinc acetate is preferably 1: 14-16, and more preferably 1: 15; when the quantum dots are green light quantum dots, the molar ratio of the cadmium oxide to the hard anhydrous zinc acetate is preferably 1: 11-13, and more preferably 1: 12; when the quantum dots are blue light quantum dots, the molar ratio of the cadmium oxide to the hard anhydrous zinc acetate is preferably 1: 5 to 7, and more preferably 1: 6.
In the invention, the heating temperature in the step (1) is preferably 145-155 ℃, further preferably 148-152 ℃, the temperature for mixing the mixture and the Se precursor A is preferably 295-305 ℃, further preferably 297-302 ℃, and the synthesis time of the CdZnSe seed is preferably 7-9 min, further preferably 8 min;
the volume ratio of the mixture to the Se precursor A is 4-6: 1, and preferably 4-5: 1.
In the invention, in the step (2), when the quantum dots are red light quantum dots, the Se precursor B contains Se powder and tri-n-octylphosphine in a molar volume ratio of 1mol: 0.9-1.1L, preferably 1mol: 1L;
when the quantum dots are green light quantum dots, the Se precursor B contains Se powder and tributylphosphine in a molar volume ratio of 1mol: 0.4-0.6L, preferably 1mol: 0.5L;
when the quantum dots are blue light quantum dots, the Se precursor B contains Se powder and trioctylamine, and the molar ratio of the Se powder to the trioctylamine is 1: 3-5, preferably 1: 3.5-4.5.
In the invention, the process of mixing the CdZnSe seeds with the Se precursor B is as follows: cooling the CdZnSe seeds to room temperature at a speed of 15-25 ℃/min, then heating at a speed of 4-6 ℃/min, starting to dropwise add the Se precursor B when the temperature reaches 235-245 ℃, stopping dropwise adding after the temperature rises to 315-325 ℃, keeping the temperature for 9-11 min, cooling to room temperature at a speed of 10-20 ℃/min, and repeating for 2-3 times; preferably, the CdZnSe seeds are cooled to room temperature at the speed of 18-22 ℃/min, then the temperature is increased at the speed of 4-5 ℃/min, when the temperature reaches 238-242 ℃, the Se precursor B is dripped, the dripping is stopped after the temperature is increased to 319-321 ℃, the temperature is kept for 9-10 min, the temperature is cooled to room temperature at the speed of 14-16 ℃/min, and the process is repeated for 3 times.
In the invention, the dropping speed of the Se precursor B is preferably 2.8-3.2 mL/h, and more preferably 2.8-3.2 mL/h.
In the invention, the reaction temperature in the step (3) is preferably 255-265 ℃, more preferably 257-263 ℃, and the reaction time is preferably 25-35 min, more preferably 28-32 min; the CdZnSe crystal nucleus, the zinc stearate, the Se precursor B and the dodecanoic acid are mixed by mixing the CdZnSe crystal nucleus with the zinc stearate and then dropwise adding the Se precursor B and the dodecanoic acid simultaneously.
In the invention, the dropping rate of the Se precursor B in the step (3) is 1.8-4.2 mL/h, and when the quantum dots are red light quantum dots, the dropping rate is preferably 3.8-4.2 mL/h, and is further preferably 3.9-4.1 mL/h;
when the quantum dots are green light quantum dots, the dripping speed is preferably 2.8-3.2 mL/h, and further preferably 2.9-3.1 mL/h;
when the quantum dots are blue light quantum dots, the dripping speed is preferably 1.8-2.2 mL/h, and further preferably 1.9-2.1 mL/h.
In the invention, the dropping rate of the dodecanoic acid in the step (3) is preferably 0.4-0.6 mL/h, and more preferably 0.5 mL/h.
The molar ratio of the CdZnSe crystal nucleus, the zinc stearate, the Se precursor B and the dodecanoic acid is 1:104:104:4～6*10-3Preferably 1:104:104:4.5～5.5*10-3。
The invention also provides the CdZnSe/ZnSe quantum dots with narrow line widths, which are prepared by the preparation method.
The technical solutions provided by the present invention are described in detail below with reference to examples, but they should not be construed as limiting the scope of the present invention.
Example 1
A preparation method of narrow-linewidth red light CdZnSe/ZnSe quantum dots comprises the following steps:
(1) mixing 0.4mmol of cadmium oxide, 6mmol of hard anhydrous zinc acetate, 8mL of oleic acid and 15mL of trioctylamine, heating to 146 ℃, vacuumizing, introducing nitrogen, heating to 300 ℃, mixing the mixture with a Se precursor A (the temperature of the Se precursor A is 250 ℃), reacting for 8min to obtain CdZnSe seeds, wherein the volume ratio of the mixture to the Se precursor A is 5:1, the Se precursor A is obtained by mixing Se powder, tri-n-octylphosphine and trioctylamine, and the dosage ratio of the Se powder, the tri-n-octylphosphine and the trioctylamine is 1:1: 0.5;
(2) reducing the CdZnSe seeds to room temperature at the speed of 20 ℃/min, then heating up at the speed of 5 ℃/min, starting to dropwise add the Se precursor B at the speed of 3mL/h when the temperature reaches 240 ℃, stopping dropwise adding after the temperature is increased to 320 ℃, preserving the temperature for 10min, reducing the temperature to room temperature at the speed of 15 ℃/min, and repeating for 3 times to obtain CdZnSe crystal nuclei; the Se precursor B is obtained by mixing Se powder and tri-n-octylphosphine in a molar volume ratio of 1mol: 1L;
(3) mixing the CdZnSe crystal nucleus with zinc stearate, heating to 260 ℃, dropwise adding Se precursor B at the speed of 4mL/h and dropwise adding dodecanoic acid at the speed of 0.5mL/h, and after dropwise adding, continuously preserving heat for 30min to finish coating of a ZnSe shell layer, wherein the ratio of the CdZnSe crystal nucleus to the zinc stearate to the Se precursor B to the dodecanoic acid is 1:104:104:5*10-3。
Example 2
A preparation method of narrow-linewidth green light CdZnSe/ZnSe quantum dots comprises the following steps:
(1) mixing 0.4mmol of cadmium oxide, 4.8mmol of hard anhydrous zinc acetate, 8mL of oleic acid and 15mL of trioctylamine, heating to 150 ℃, vacuumizing, introducing nitrogen, heating to 300 ℃, mixing the mixture with a Se precursor A (the temperature of the Se precursor A is 250 ℃), and reacting for 8min to obtain CdZnSe seeds, wherein the volume ratio of the mixture to the Se precursor A is 4:1, the Se precursor A is obtained by mixing Se powder, tributylphosphine and trioctylamine, and the dosage ratio of the Se powder, the tributylphosphine and the trioctylamine is 1:0.8: 0.5;
(2) reducing the CdZnSe seeds to room temperature at the speed of 18 ℃/min, then heating up at the speed of 5 ℃/min, starting to dropwise add the Se precursor B at the speed of 3mL/h when the temperature reaches 240 ℃, stopping dropwise adding after the temperature is increased to 320 ℃, preserving the temperature for 10min, reducing the temperature to room temperature at the speed of 16 ℃/min, and repeating for 3 times to obtain CdZnSe crystal nuclei; the Se precursor B is obtained by mixing Se powder and tributyl phosphine in a molar volume ratio of 1mol: 0.5L;
(3) mixing CdZnSe crystal nucleus with zinc stearate, heating to 260 ℃, dropwise adding Se precursor B at the speed of 3mL/h and lauric acid at the speed of 0.5mL/h, continuously preserving heat for 30min after dropwise adding is finished, and finishing coating of a ZnSe shell layer, wherein the ratio of the CdZnSe crystal nucleus to the zinc stearate to the Se precursor B to the lauric acid is 1:104:104:5*10-3。
Example 3
A preparation method of narrow-linewidth blue light CdZnSe/ZnSe quantum dots comprises the following steps:
(1) mixing 0.4mmol of cadmium oxide, 2.4mmol of hard anhydrous zinc acetate, 8mL of oleic acid and 15mL of trioctylamine, heating to 152 ℃, vacuumizing, introducing nitrogen, heating to 300 ℃, mixing the mixture with a Se precursor A (the temperature of the Se precursor A is 200 ℃), and reacting for 9min to obtain CdZnSe seeds, wherein the volume ratio of the mixture to the Se precursor A is 5:1, the Se precursor A is obtained by mixing Se powder and trioctylamine, and the dosage ratio of the Se powder to the trioctylamine is 1: 4;
(2) reducing the CdZnSe seeds to room temperature at the speed of 20 ℃/min, then heating up at the speed of 5 ℃/min, starting to dropwise add the Se precursor B at the speed of 3mL/h when the temperature reaches 240 ℃, stopping dropwise adding after the temperature is increased to 320 ℃, preserving the temperature for 10min, reducing the temperature to room temperature at the speed of 15 ℃/min, and repeating for 3 times to obtain CdZnSe crystal nuclei; the Se precursor B is obtained by mixing Se powder and trioctylamine, and the molar ratio of the Se powder to the trioctylamine is 1: 4.
(3) Mixing the CdZnSe crystal nucleus with zinc stearate, heating to 260 ℃, dropwise adding Se precursor B at the speed of 2mL/h and dropwise adding dodecanoic acid at the speed of 0.5mL/h, and after dropwise adding, continuously preserving heat for 30min to finish coating of a ZnSe shell layer, wherein the ratio of the CdZnSe crystal nucleus to the zinc stearate to the Se precursor B to the dodecanoic acid is 1:104:104:5*10-3. The prepared red light, green light and blue light quantum dots have uniform sphalerite structures, have 95%, 90% and 85% fluorescence quantum yield at 628nm, 520nm and 457nm respectively, and have corresponding half-peak widths of 16.1nm, 16.5nm and 11nm respectively.
As can be seen from fig. 1, the emission peak positions of the red, green and blue quantum dots are 628nm, 520nm and 457nm, respectively, the half-peak widths are 16.1nm, 16.5nm and 11nm, respectively, which are the narrowest, and the diameters of the corresponding quantum dots are 13.8nm, 12.6nm and 9.1nm, respectively.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (10)

1. A preparation method of CdZnSe/ZnSe quantum dots with narrow line widths is characterized by comprising the following steps:
(1) mixing cadmium oxide, hard anhydrous zinc acetate, oleic acid and trioctylamine, heating and vacuumizing, then filling nitrogen, and mixing the mixture with the Se precursor A to obtain CdZnSe seeds;
(2) mixing the CdZnSe seeds with the Se precursor B, and carrying out secondary growth of the CdZnSe seeds to obtain CdZnSe crystal nuclei;
(3) and mixing the CdZnSe crystal nucleus, zinc stearate, Se precursor B and dodecanoic acid, and then reacting to finish coating the ZnSe shell layer.
2. The preparation method of narrow-linewidth red, green and blue CdZnSe/ZnSe quantum dots with a narrow linewidth according to claim 1, wherein in the step (1), when the quantum dots are red light quantum dots, the Se precursor A comprises Se powder, tri-n-octylphosphine and trioctylamine, and the molar ratio of the Se powder, the tri-n-octylphosphine and the trioctylamine is 1:1: 0.4-0.6;
when the quantum dots are green light quantum dots, the Se precursor A comprises Se powder, tributyl phosphine and trioctyl amine, and the molar ratio of the Se powder to the tributyl phosphine to the trioctyl amine is 1:0.8: 0.4-0.6;
when the quantum dots are blue light quantum dots, the Se precursor A contains Se powder and trioctylamine, and the molar ratio of the Se powder to the trioctylamine is 1: 3-5.
3. The preparation method of narrow-linewidth red, green and blue CdZnSe/ZnSe quantum dots according to claim 1 or 2, wherein the molar volume ratio of cadmium oxide, oleic acid and trioctylamine in the step (1) is 0.3-0.5 mol: 7-9L: 13-17L.
4. The preparation method of narrow linewidth red, green and blue light CdZnSe/ZnSe quantum dots according to claim 3, wherein in the step (1), when the quantum dots are red light quantum dots, the molar ratio of the cadmium oxide to the hard anhydrous zinc acetate is 1: 14-16; when the quantum dots are green quantum dots, the molar ratio of the cadmium oxide to the hard anhydrous zinc acetate is 1: 11 to 13; when the quantum dots are blue light quantum dots, the molar ratio of the cadmium oxide to the hard anhydrous zinc acetate is 1: 5 to 7.
5. The preparation method of CdZnSe/ZnSe quantum dots with narrow line widths of red, green and blue lights according to claim 4, wherein the heating temperature in the step (1) is 145-155 ℃, the mixing temperature of the mixture and the Se precursor A is 295-305 ℃, and the synthesis time of the CdZnSe seeds is 7-9 min;
the volume ratio of the mixture to the Se precursor A is 4-6: 1.
6. The preparation method of narrow-linewidth red, green and blue CdZnSe/ZnSe quantum dots according to claim 1, wherein in the step (2), when the quantum dots are red light quantum dots, the Se precursor B contains Se powder and tri-n-octylphosphine in a molar volume ratio of 1mol: 0.9-1.1L;
when the quantum dots are green light quantum dots, the Se precursor B contains Se powder and tributylphosphine in a molar volume ratio of 1mol: 0.4-0.6L;
when the quantum dots are blue light quantum dots, the Se precursor B contains Se powder and trioctylamine, and the molar ratio of the Se powder to the trioctylamine is 1: 3-5.
7. The preparation method of the narrow linewidth CdZnSe/ZnSe quantum dot with red, green and blue light according to claim 1 or 6, wherein the mixing of the CdZnSe seed and the Se precursor B comprises the following steps: cooling the CdZnSe seeds to room temperature at a speed of 15-25 ℃/min, then heating at a speed of 4-6 ℃/min, starting to dropwise add the Se precursor B when the temperature reaches 235-245 ℃, stopping dropwise adding after the temperature rises to 315-325 ℃, keeping the temperature for 9-11 min, cooling to room temperature at a speed of 10-15 ℃/min, and repeating for 2-3 times; the dropping speed of the Se precursor B is 2.8-3.2 mL/h.
8. The preparation method of the narrow-linewidth red, green and blue CdZnSe/ZnSe quantum dot according to claim 1, wherein the reaction temperature in the step (3) is 255-265 ℃, the reaction time is 25-35 min, and the mixing of the CdZnSe crystal nucleus, the zinc stearate, the Se precursor B and the dodecanoic acid is carried out by mixing the CdZnSe crystal nucleus with the zinc stearate and then dripping the Se precursor B and the dodecanoic acid simultaneously.
9. The preparation method of narrow-linewidth red, green and blue CdZnSe/ZnSe quantum dots according to claim 8, wherein the dropping rate of the Se precursor B in the step (3) is 1.8-4.2 mL/h, and the dropping rate of the dodecanoic acid is 0.4-0.6 mL/h;
the molar ratio of the CdZnSe crystal nucleus, the zinc stearate, the Se precursor B and the dodecanoic acid is 1:104:104:4～6*10-3。
10. The CdZnSe/ZnSe quantum dot with narrow line width prepared by the preparation method of any one of claims 1 to 9.
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