CN114605923A - Large-size silicon edge polishing solution and preparation method thereof - Google Patents
Large-size silicon edge polishing solution and preparation method thereof Download PDFInfo
- Publication number
- CN114605923A CN114605923A CN202210281713.4A CN202210281713A CN114605923A CN 114605923 A CN114605923 A CN 114605923A CN 202210281713 A CN202210281713 A CN 202210281713A CN 114605923 A CN114605923 A CN 114605923A
- Authority
- CN
- China
- Prior art keywords
- acid
- spherical
- particles
- polishing solution
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 62
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000002245 particle Substances 0.000 claims abstract description 44
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 38
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 35
- 239000013078 crystal Substances 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 19
- -1 polishing solution Chemical compound 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 10
- 239000011230 binding agent Substances 0.000 claims abstract description 10
- 239000000243 solution Substances 0.000 claims description 61
- 238000006243 chemical reaction Methods 0.000 claims description 31
- 239000003513 alkali Substances 0.000 claims description 20
- 238000003756 stirring Methods 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 15
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 10
- 150000003839 salts Chemical class 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 238000005406 washing Methods 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- 150000007524 organic acids Chemical class 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 5
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 4
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- 229920001400 block copolymer Polymers 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 4
- 150000007522 mineralic acids Chemical class 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 4
- 229920002401 polyacrylamide Polymers 0.000 claims description 4
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 4
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 4
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 4
- 238000006884 silylation reaction Methods 0.000 claims description 4
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000011975 tartaric acid Substances 0.000 claims description 4
- 235000002906 tartaric acid Nutrition 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- QAIPRVGONGVQAS-DUXPYHPUSA-N trans-caffeic acid Chemical compound OC(=O)\C=C\C1=CC=C(O)C(O)=C1 QAIPRVGONGVQAS-DUXPYHPUSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 150000000703 Cerium Chemical class 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims description 3
- 239000012798 spherical particle Substances 0.000 claims description 3
- ACEAELOMUCBPJP-UHFFFAOYSA-N (E)-3,4,5-trihydroxycinnamic acid Natural products OC(=O)C=CC1=CC(O)=C(O)C(O)=C1 ACEAELOMUCBPJP-UHFFFAOYSA-N 0.000 claims description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- 239000005711 Benzoic acid Substances 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- 229920002125 Sokalan® Polymers 0.000 claims description 2
- 235000011054 acetic acid Nutrition 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 235000010323 ascorbic acid Nutrition 0.000 claims description 2
- 239000011668 ascorbic acid Substances 0.000 claims description 2
- 229960005070 ascorbic acid Drugs 0.000 claims description 2
- 235000010233 benzoic acid Nutrition 0.000 claims description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 2
- 239000004327 boric acid Substances 0.000 claims description 2
- 235000004883 caffeic acid Nutrition 0.000 claims description 2
- 229940074360 caffeic acid Drugs 0.000 claims description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 2
- QAIPRVGONGVQAS-UHFFFAOYSA-N cis-caffeic acid Natural products OC(=O)C=CC1=CC=C(O)C(O)=C1 QAIPRVGONGVQAS-UHFFFAOYSA-N 0.000 claims description 2
- 235000015165 citric acid Nutrition 0.000 claims description 2
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 claims description 2
- 125000000524 functional group Chemical group 0.000 claims description 2
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 claims description 2
- 239000004310 lactic acid Substances 0.000 claims description 2
- 235000014655 lactic acid Nutrition 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- CVMIVKAWUQZOBP-UHFFFAOYSA-L manganic acid Chemical compound O[Mn](O)(=O)=O CVMIVKAWUQZOBP-UHFFFAOYSA-L 0.000 claims description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims description 2
- VLAPMBHFAWRUQP-UHFFFAOYSA-L molybdic acid Chemical compound O[Mo](O)(=O)=O VLAPMBHFAWRUQP-UHFFFAOYSA-L 0.000 claims description 2
- 239000000178 monomer Substances 0.000 claims description 2
- FXADMRZICBQPQY-UHFFFAOYSA-N orthotelluric acid Chemical compound O[Te](O)(O)(O)(O)O FXADMRZICBQPQY-UHFFFAOYSA-N 0.000 claims description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 2
- 229920000747 poly(lactic acid) Polymers 0.000 claims description 2
- 239000004584 polyacrylic acid Substances 0.000 claims description 2
- 229920000570 polyether Polymers 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- 239000004626 polylactic acid Substances 0.000 claims description 2
- 229920001444 polymaleic acid Polymers 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 2
- 229960004889 salicylic acid Drugs 0.000 claims description 2
- QYHFIVBSNOWOCQ-UHFFFAOYSA-N selenic acid Chemical compound O[Se](O)(=O)=O QYHFIVBSNOWOCQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 239000001384 succinic acid Substances 0.000 claims description 2
- 235000011044 succinic acid Nutrition 0.000 claims description 2
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 claims description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 2
- 239000004721 Polyphenylene oxide Substances 0.000 claims 1
- 125000003700 epoxy group Chemical group 0.000 claims 1
- 239000008367 deionised water Substances 0.000 abstract description 6
- 229910021641 deionized water Inorganic materials 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- 230000003746 surface roughness Effects 0.000 abstract description 2
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- KBPZVLXARDTGGD-UHFFFAOYSA-N 2,3-dihydroxybutanedioic acid;iron Chemical compound [Fe].OC(=O)C(O)C(O)C(O)=O KBPZVLXARDTGGD-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000002444 silanisation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/04—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes subjecting the grinding or polishing tools, the abrading or polishing medium or work to vibration, e.g. grinding with ultrasonic frequency
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
Abstract
The invention discloses a large-size silicon edge polishing solution and a preparation method thereof. The preparation method comprises the steps of preparing crystal nuclei by taking active silicic acid as a raw material, adding a binder in the preparation process of the crystal nuclei, changing surface group bonding grooves of the crystal nucleus particles, influencing surface charge distribution of the crystal nucleus particles, and compressing the thickness of an electric double layer of the crystal nucleus particles to generate a non-spherical crystal nucleus structure. And adding a template agent in the process of particle growth, and performing isotropic growth on crystal nucleus structures in various shapes, thereby obtaining the silicon oxide particles in corresponding shapes. And performing template removal operation on the obtained silicon oxide particles to prepare the non-spherical mesoporous silicon oxide particles. The prepared particles and the polishing auxiliary agent are respectively added into deionized water according to a certain proportion to prepare the polishing solution suitable for polishing the edges of large-size silicon. Compared with the traditional silicon edge polishing solution, the invention can effectively improve the material removal rate and reduce the surface roughness of the polished silicon edge.
Description
Technical Field
The invention relates to the technical field of silicon wafer processing, in particular to large-size silicon edge polishing solution and a preparation method thereof.
Background
As integrated circuit fabrication technology advances, silicon substrates grow larger in size. Because the weight of the large-size silicon substrate is larger, the contact edge of the large-size silicon substrate and the manufactured wafer thereof with the packing box is easy to crack due to collision in the transportation process, the quality of the edge chip is influenced, and pollution is easy to cause. Patent 99107174.3 discloses a silicon edge polishing composition containing a silica sol and a base, and patents 201310753518.8 and 201410808769.6 started to chemically develop polishing solutions suitable for chemical mechanical polishing of silicon edges. The patent 202110226155.7 utilizes ultrasonic vibration to assist to improve the kinetic energy of particles in edge polishing, increases the impact action of abrasive particles in the horizontal or vertical direction on the basis of the cutting action of abrasive particles in traditional silicon edge polishing, increases the mechanical action in polishing, and improves the polishing efficiency of large-size silicon edges. The above patents respectively improve the edge polishing performance in terms of chemical, mechanical assistance, etc.
The abrasive particles play a decisive role in the mechanical removal and removal efficiency during polishing, and the applicant's topic group confirms that the material removal in the chemical mechanical polishing is almost zero in the abrasive-free condition. In order to improve the polishing efficiency, patent 201110220438.7 discloses a method of heating and concentrating, and adding organic and inorganic bases to prepare non-spherical nano silica sol, which improves the polishing efficiency by 10% compared with the conventional spherical silica sol. Patent 201310291624.9 discloses that when a soluble divalent anion or trivalent cation solution is added in the preparation of silica sol to prepare irregular silica sol, the polishing efficiency of the irregular silica sol on a sapphire substrate is improved by 5-10% compared with that of spherical silica sol particles. Patent 202110226155.7 found that ultrasonic assistance can improve polishing efficiency, however, solid spherical particles are prone to edge damage.
Disclosure of Invention
The technical problem to be solved by the embodiments of the present invention is to provide a large-size silicon edge polishing solution and a preparation method thereof, so as to improve the polishing efficiency of the large-size silicon edge, avoid polishing defects, and reduce the roughness of the polished surface.
In order to solve the technical problem, the invention provides a preparation method of a large-size silicon edge polishing solution, which comprises the following steps:
step 1: preparing non-spherical mesoporous silica particles;
step 2: and adding a polishing assistant into the non-spherical mesoporous silica particles to prepare the large-size silicon edge polishing solution.
Further, the non-spherical mesoporous silica particles are prepared by the following steps:
step a: preparing 1-10% active silicic acid water solution, adjusting pH value to keep pH range between 1-3; heating and stirring, and keeping the temperature of the silicic acid solution at 80 ℃; slowly dropwise adding 1% aqueous alkali into the silicic acid solution, and adding 0.1-1% of binder under stirring for stirring at constant temperature for 1-2 hours when the pH of the silicic acid solution is increased to 7; continuously adding the alkali solution until the pH value of the silicic acid system is increased to 9-10, raising the temperature of the reaction system to 100 ℃, and keeping the reaction for 2-5 hours to obtain non-spherical silicon oxide crystal nuclei;
step b: taking a certain amount of non-spherical silicon oxide crystal nucleus, and adding water to dilute by 5-10 times; dripping 1-5% of template agent and 1-10% of active silicic acid at the same speed, reacting for 8-10 hours to obtain non-spherical silicon oxide particles; in the reaction process, heating at constant temperature to keep the temperature of the system between 80 and 100 ℃, and adding 1 percent of alkali solution and water to keep the pH and the volume of the reaction system stable;
step c: dispersing non-spherical silicon oxide particles in a mixed solution of alcohol and acid, controlling the ratio of the alcohol to the acid at 9:1, stirring for 1-2 hours at 50-60 ℃ to remove a template agent, centrifuging, washing and drying to obtain the non-spherical mesoporous silicon oxide particles.
Further, the binder is one or more of organic acid and salt thereof, inorganic acid and salt thereof, high molecular polymer and silanization reagent.
Further, the inorganic acid and its salt include one or more of sulfuric acid, nitric acid, carbonic acid, phosphoric acid, boric acid, aluminic acid, meta-aluminic acid, manganic acid, telluric acid, molybdic acid, tungstic acid, selenic acid and their salts of copper, iron, aluminum, manganese, chromium, molybdenum, tungsten, vanadium, niobium, zirconium, lanthanum, titanium, nickel and cerium.
Further, the organic acid and its salt include one or more of citric acid, malic acid, tartaric acid, acetic acid, succinic acid and oxalic acid, benzoic acid, salicylic acid, caffeic acid, tartaric acid, oxalic acid, ascorbic acid, lactic acid, and organic acid monomer polymers such as polymaleic acid, polyacrylic acid, polylactic acid and its copper, iron, aluminum, manganese, chromium, molybdenum, tungsten, vanadium, niobium, zirconium, lanthanum, titanium, nickel, cerium salts.
Further, the high molecular polymer comprises a polyhydroxy or polyether polymer, and is selected from one or more of polyvinyl alcohol, a block copolymer of polyvinyl alcohol and polystyrene, polyethylene glycol, polyoxyethylene and polyoxyethylene ether.
Furthermore, the groups contained in the silylation agent are methoxy and ethoxy, and the functional groups comprise amino, epoxy and vinyl and comprise one or more of KH-550, KH-560, KH-570, KH-580, KH-590, KH-151, KH-171, KH-172, KH-602, KH-792, KH-571 and KH-603.
Further, the template agent is one or more of cetyl trimethyl ammonium bromide, polyacrylamide, sodium dodecyl benzene sulfonate, fatty alcohol sulfate, fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene and block copolymer thereof.
Correspondingly, the embodiment of the invention also provides large-size silicon edge polishing solution which comprises non-spherical mesoporous silica particles and a polishing auxiliary agent.
Further, the non-spherical particles comprise one or more of potato-shaped, peanut-shaped, chain-shaped and petal-shaped particles; the structure of the mesopores is one or more of a dendritic structure, a single-layer hollow mesopore structure and a double-layer hollow mesopore structure.
Further, the polishing solution is applied to large-size silicon edge chemical mechanical polishing.
Further, the polishing solution is applied to large-size silicon edge chemical mechanical polishing under the conditions of ultrasonic assistance, jet flow assistance and ultrasonic-jet flow assistance.
The beneficial effects of the invention are as follows: the invention uses the adhesive to obtain crystal nuclei with different shapes during the crystal nucleus growth, adds the template agent during the particle growth to prepare the silica particles with different shapes containing the template, and obtains the non-spherical mesoporous silica particles through the template removing step. Compared with spherical and non-spherical silicon oxide particles, the removal efficiency of the prepared particles is improved by 10-20%. Meanwhile, chemical substances adsorbed by the porous particles can be accurately delivered to the surface of the material and released, so that the balance of chemical machinery is facilitated, the defects of the polished surface are reduced, and the roughness of the polished surface is improved. Particularly, the nonspherical mesoporous silica particles prepared by the method can effectively avoid the defects caused by hard contact collision of the particles under the conditions of ultrasonic assistance, jet assistance, ultrasonic-jet assistance and other polishing process conditions with larger particle kinetic energy.
Detailed Description
It should be noted that, in the present application, the embodiments and features of the embodiments may be combined with each other without conflict, and the present invention is further described in detail with reference to specific embodiments.
Example one
And (2) taking 500g of 5% active silicic acid aqueous solution, dropwise adding nitric acid to adjust the pH to be =1, heating and stirring, and keeping the temperature of the silicic acid solution at 100 ℃. To the silicic acid solution, an alkali solution of 1% concentration was slowly dropped to pH =7, and 1% of a binder (iron tartrate) was added under stirring and stirred at a constant temperature for 1 hour. Adding alkali solution until the pH value of the silicic acid system is increased to 9, raising the temperature of the reaction system to 100 ℃, and keeping the reaction for 5 hours to obtain the non-spherical silicon oxide crystal nucleus.
500g of non-spherical silica nuclei were diluted 5-fold with water. 1 percent of template agent (sodium dodecyl benzene sulfonate) and 5 percent of active silicic acid are simultaneously dropped at the same speed, and the reaction is carried out for 8 hours to obtain the non-spherical silicon oxide particles. And in the reaction process, heating at constant temperature to keep the temperature of the system at 80 ℃, and adding 1% of alkali solution and water to keep the pH and the volume of the reaction system stable.
The preparation of non-spherical silicon oxide particles, washing, drying, dispersing in a mixed solution of alcohol and acid, controlling the ratio of alcohol to acid at 9:1, stirring for 1 hour at 50 ℃ to remove a template agent (sodium dodecyl benzene sulfonate), and drying the non-spherical mesoporous silicon oxide particles after repeated centrifugal washing. Dispersing the prepared non-spherical mesoporous silica particles into deionized water, adding a polishing auxiliary agent, and polishing the edges of the large-size silicon wafer under the ultrasonic-assisted condition.
Example two
Adding nitric acid dropwise into 500g of 10% active silicic acid aqueous solution to adjust the pH =3, heating and stirring, and keeping the temperature of the silicic acid solution at 80 ℃. To the silicic acid solution, an alkali solution having a concentration of 1% was slowly dropped to pH =7, and 0.1% of a binder (polyoxyethylene) was added under stirring, and stirred at a constant temperature for 1.5 hours. Adding alkali solution until the pH value of the silicic acid system is increased to 9, raising the temperature of the reaction system to 100 ℃, and keeping the reaction for 3 hours to obtain the non-spherical silicon oxide crystal nucleus.
500g of non-spherical silica nuclei were taken and diluted 10 times with water. 5 percent of template agent (cetyl trimethyl ammonium bromide) and 10 percent of active silicic acid are simultaneously dropped at the same speed, and the reaction is carried out for 9 hours to obtain the non-spherical silicon oxide particles. And in the reaction process, heating at constant temperature to keep the temperature of the system at 90 ℃, and adding 1% of alkali solution and water to keep the pH and the volume of the reaction system stable.
The preparation of non-spherical silicon oxide particles, washing, drying, dispersing in a mixed solution of alcohol and acid, controlling the ratio of alcohol to acid at 9:1, stirring for 2 hours at 60 ℃ to remove a template agent (cetyl trimethyl ammonium bromide), and drying the non-spherical mesoporous silicon oxide particles after repeated centrifugal washing. Dispersing the prepared non-spherical mesoporous silica particles into deionized water, adding a polishing auxiliary agent, and polishing the edges of the large-size silicon wafer under the ultrasonic-assisted condition.
EXAMPLE III
Adding nitric acid dropwise into 500g of 1% active silicic acid aqueous solution to adjust the pH =2, heating and stirring, and keeping the temperature of the silicic acid solution at 90 ℃. To the silicic acid solution, a 1% alkali solution was slowly added dropwise to pH =7, and 0.5% binder (KH-580) was added under stirring and stirred at a constant temperature for 2 hours. Adding alkali solution until the pH value of the silicic acid system is increased to 10, raising the temperature of the reaction system to 100 ℃, and keeping the reaction for 2 hours to obtain the non-spherical silicon oxide crystal nucleus.
500g of non-spherical silica nuclei were diluted 8-fold with water. 3 percent of template agent (polyacrylamide) and 1 percent of active silicic acid are simultaneously dropped at the same speed, and the reaction is carried out for 10 hours to obtain the non-spherical silicon oxide particles. And in the reaction process, heating at constant temperature to keep the temperature of the system at 100 ℃, and adding 1% of alkali solution and water to keep the pH and the volume of the reaction system stable.
The preparation of non-spherical silicon oxide particles, washing, drying, dispersing in a mixed solution of alcohol and acid, controlling the ratio of alcohol to acid at 9:1, stirring for 1.5 hours at 55 ℃ to remove a template agent (polyacrylamide), and drying the non-spherical mesoporous silicon oxide particles after repeated centrifugal washing. Dispersing the prepared non-spherical mesoporous silica particles into deionized water, adding a polishing auxiliary agent, and polishing the edges of the large-size silicon wafer under a jet flow condition.
Comparative example 1
Adding nitric acid dropwise into 500g of 10% active silicic acid aqueous solution to adjust the pH =3, heating and stirring, and keeping the temperature of the silicic acid solution at 80 ℃. Slowly dropwise adding an alkali solution with the concentration of 1% into the silicic acid solution until the pH value is increased to 9, raising the temperature of the reaction system to 100 ℃, and keeping the reaction for 3 hours to obtain the spherical silicon oxide crystal nucleus.
500g of spherical silica nuclei were taken and diluted 10-fold with water. 10 percent of active silicic acid is dripped to react for 9 hours to obtain spherical silicon oxide particles. And in the reaction process, heating at constant temperature to keep the temperature of the system at 90 ℃, and adding 1% of alkali solution and water to keep the pH and the volume of the reaction system stable.
Dispersing the prepared spherical silicon oxide particles into deionized water, adding a polishing auxiliary agent, and polishing the edges of the large-size silicon wafer under the ultrasonic-assisted condition.
Example two
Adding nitric acid dropwise into 500g of 1% active silicic acid aqueous solution to adjust the pH =2, heating and stirring, and keeping the temperature of the silicic acid solution at 90 ℃. To the silicic acid solution, a 1% alkali solution was slowly added dropwise to pH =7, and 0.5% binder (KH-580) was added under stirring and stirred at a constant temperature for 2 hours. Adding alkali solution until the pH value of the silicic acid system is increased to 10, raising the temperature of the reaction system to 100 ℃, and keeping the reaction for 2 hours to obtain the non-spherical silicon oxide crystal nucleus.
500g of non-spherical silica nuclei were diluted 8-fold with water. 1 percent of active silicic acid is dripped to react for 10 hours to obtain non-spherical silicon oxide particles. And in the reaction process, heating at constant temperature to keep the temperature of the system at 100 ℃, and adding 1% of alkali solution and water to keep the pH and the volume of the reaction system stable.
The prepared non-spherical silica particles are repeatedly centrifuged and washed, and then the non-spherical silica particles are dried. Dispersing the prepared non-spherical silicon oxide particles into deionized water, adding a polishing auxiliary agent, and polishing the edges of the large-size silicon wafer under the jet flow condition.
The results of polishing for each of the examples and comparative examples are shown in table 1:
in the preparation of polishing particles of the polishing solution, active silicic acid is used as a raw material to prepare crystal nuclei, and a binder is added in the preparation process of the crystal nuclei to change surface group bonding grooves of the crystal nuclei, influence the surface charge distribution of the crystal nuclei and compress the thickness of an electric double layer of the crystal nuclei, so that a non-spherical crystal nucleus structure is generated. And adding a template agent in the process of particle growth, and performing isotropic growth on crystal nucleus structures in various shapes, thereby obtaining the silicon oxide particles in corresponding shapes. And performing template removal operation on the obtained silicon oxide particles to prepare the non-spherical mesoporous silicon oxide particles. Adding non-spherical mesoporous silica particles and a polishing auxiliary agent according to a certain proportion to prepare the polishing solution suitable for polishing the edges of large-size silicon. Compared with the traditional silicon edge polishing solution, the silicon edge polishing solution disclosed by the invention can effectively improve the material removal rate, and avoid the defects on the polished surface and further reduce the surface roughness after polishing.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (12)
1. A preparation method of large-size silicon edge polishing solution is characterized by comprising the following steps:
step 1: preparing to obtain non-spherical mesoporous silica particles;
step 2: adding a polishing auxiliary agent into the non-spherical mesoporous silica particles to prepare the large-size silicon edge polishing solution.
2. The method of claim 1, wherein the non-spherical mesoporous silica particles are prepared by the following steps:
a, step a: preparing 1-10% active silicic acid water solution, adjusting pH value to keep pH range between 1-3; heating and stirring, and keeping the temperature of the silicic acid solution at 80 ℃; slowly dropwise adding 1% aqueous alkali into the silicic acid solution, and adding 0.1-1% of binder under stirring for stirring at constant temperature for 1-2 hours when the pH of the silicic acid solution is increased to 7; continuously adding the alkali solution until the pH value of the silicic acid system is increased to 9-10, raising the temperature of the reaction system to 100 ℃, and keeping the reaction for 2-5 hours to obtain non-spherical silicon oxide crystal nuclei;
step b: taking a certain amount of non-spherical silicon oxide crystal nucleus, and adding water to dilute by 5-10 times; dripping 1-5% of template agent and 1-10% of active silicic acid at the same speed, reacting for 8-10 hours to obtain non-spherical silicon oxide particles; in the reaction process, heating at constant temperature to keep the temperature of the system between 80 and 100 ℃, and adding 1 percent of alkali solution and water to keep the pH and the volume of the reaction system stable;
step c: dispersing non-spherical silicon oxide particles in a mixed solution of alcohol and acid, controlling the ratio of the alcohol to the acid at 9:1, stirring for 1-2 hours at 50-60 ℃ to remove a template agent, centrifuging, washing and drying to obtain the non-spherical mesoporous silicon oxide particles.
3. The method for preparing large-size silicon edge polishing solution according to claim 2, wherein the binder is one or more of organic acid and salt thereof, inorganic acid and salt thereof, high molecular polymer and silylation agent.
4. The method for preparing large-sized silicon edge polishing solution according to claim 3, wherein the inorganic acid and its salt comprise one or more of sulfuric acid, nitric acid, carbonic acid, phosphoric acid, boric acid, aluminic acid, meta-aluminic acid, manganic acid, telluric acid, molybdic acid, tungstic acid, selenic acid and its copper, iron, aluminum, manganese, chromium, molybdenum, tungsten, vanadium, niobium, zirconium, lanthanum, titanium, nickel, cerium salt.
5. The method of claim 3, wherein the organic acid and its salt comprises one or more of citric acid, malic acid, tartaric acid, acetic acid, succinic acid and oxalic acid, benzoic acid, salicylic acid, caffeic acid, tartaric acid, oxalic acid, ascorbic acid, lactic acid, and organic acid monomer polymers such as polymaleic acid, polyacrylic acid, polylactic acid and its copper, iron, aluminum, manganese, chromium, molybdenum, tungsten, vanadium, niobium, zirconium, lanthanum, titanium, nickel, cerium salts.
6. The method for preparing large-size silicon edge polishing solution according to claim 3, wherein the high molecular polymer comprises polyhydroxy or polyether-based polymer, and is selected from one or more of polyvinyl alcohol, block copolymer of polyvinyl alcohol and polystyrene, polyethylene glycol, polyoxyethylene and polyoxyethylene ether.
7. The method of claim 3, wherein the silylation agent comprises methoxy and ethoxy groups, and the functional groups comprise amino, epoxy, and vinyl groups, and the silylation agent comprises one or more of KH-550, KH-560, KH-570, KH-580, KH-590, KH-151, KH-171, KH-172, KH-602, KH-792, KH-571, and KH-603.
8. The method of claim 2, wherein the template agent is one or more of cetyltrimethylammonium bromide, polyacrylamide, sodium dodecylbenzenesulfonate, fatty alcohol sulfate, fatty alcohol-polyoxyethylene ether, alkylphenol ethoxylates, and block copolymers thereof.
9. The large-size silicon edge polishing solution is characterized by comprising non-spherical mesoporous silica particles and a polishing auxiliary agent.
10. The large-size silicon edge polishing solution according to claim 9, wherein the non-spherical particles comprise one or more of potato-shaped, peanut-shaped, chain-shaped, and petal-shaped; the structure of the mesopores is one or more of a dendritic structure, a single-layer hollow mesopore structure and a double-layer hollow mesopore structure.
11. The large scale silicon edge polishing solution of claim 9, wherein the polishing solution is used in large scale silicon edge chemical mechanical polishing.
12. The large-scale silicon edge polishing solution according to claim 9, wherein the polishing solution is applied to the chemical mechanical polishing of the large-scale silicon edge under the conditions of ultrasonic assistance, jet assistance and ultrasonic-jet assistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210281713.4A CN114605923A (en) | 2022-03-22 | 2022-03-22 | Large-size silicon edge polishing solution and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210281713.4A CN114605923A (en) | 2022-03-22 | 2022-03-22 | Large-size silicon edge polishing solution and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114605923A true CN114605923A (en) | 2022-06-10 |
Family
ID=81865013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210281713.4A Pending CN114605923A (en) | 2022-03-22 | 2022-03-22 | Large-size silicon edge polishing solution and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114605923A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115785819A (en) * | 2022-11-11 | 2023-03-14 | 万华化学集团电子材料有限公司 | Silicon wafer polishing composition and application thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030113251A1 (en) * | 2001-12-07 | 2003-06-19 | Chung Shan Institute Of Science & Technology | Method for preparing shape-changed nanosize colloidal silica |
| US20060118490A1 (en) * | 2004-12-02 | 2006-06-08 | The University Of Vermont And State Agricultural College | Mesoporous inorganic oxide spheres and method of making same |
| JP2009126741A (en) * | 2007-11-22 | 2009-06-11 | Jgc Catalysts & Chemicals Ltd | Non-spherical alumina-silica composite sol, method for producing the same and composition for polishing |
| CN102390837A (en) * | 2011-08-03 | 2012-03-28 | 南通海迅天恒纳米科技有限公司 | Preparation method of nonspherical nanometer-scale silica sol |
| WO2013150533A2 (en) * | 2012-04-03 | 2013-10-10 | Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. | Hybrid metal and metal oxide layers with enhanced activity |
| CN104357012A (en) * | 2014-10-30 | 2015-02-18 | 常州大学 | Abrasive compound, preparation method thereof and application thereof to chemico-mechanical polishing |
| CN104556071A (en) * | 2014-12-29 | 2015-04-29 | 上海新安纳电子科技有限公司 | Porous silica preparation method and application of porous silica |
| US20160325257A1 (en) * | 2015-05-08 | 2016-11-10 | North Carolina State University | Method for synthesizing non-spherical nanostructures |
| CN107010631A (en) * | 2016-01-28 | 2017-08-04 | 浙江晶圣美纳米科技有限公司 | A kind of aspherical cataloid nanometer grain preparation method |
| US20170349788A1 (en) * | 2016-06-01 | 2017-12-07 | Shanghai Xinanna Electronic Technology Co., LTD | Polydisperse large-particle-size silica sol and method of preparing the same |
-
2022
- 2022-03-22 CN CN202210281713.4A patent/CN114605923A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030113251A1 (en) * | 2001-12-07 | 2003-06-19 | Chung Shan Institute Of Science & Technology | Method for preparing shape-changed nanosize colloidal silica |
| US20060118490A1 (en) * | 2004-12-02 | 2006-06-08 | The University Of Vermont And State Agricultural College | Mesoporous inorganic oxide spheres and method of making same |
| JP2009126741A (en) * | 2007-11-22 | 2009-06-11 | Jgc Catalysts & Chemicals Ltd | Non-spherical alumina-silica composite sol, method for producing the same and composition for polishing |
| CN102390837A (en) * | 2011-08-03 | 2012-03-28 | 南通海迅天恒纳米科技有限公司 | Preparation method of nonspherical nanometer-scale silica sol |
| WO2013150533A2 (en) * | 2012-04-03 | 2013-10-10 | Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. | Hybrid metal and metal oxide layers with enhanced activity |
| CN104357012A (en) * | 2014-10-30 | 2015-02-18 | 常州大学 | Abrasive compound, preparation method thereof and application thereof to chemico-mechanical polishing |
| CN104556071A (en) * | 2014-12-29 | 2015-04-29 | 上海新安纳电子科技有限公司 | Porous silica preparation method and application of porous silica |
| US20160325257A1 (en) * | 2015-05-08 | 2016-11-10 | North Carolina State University | Method for synthesizing non-spherical nanostructures |
| CN107010631A (en) * | 2016-01-28 | 2017-08-04 | 浙江晶圣美纳米科技有限公司 | A kind of aspherical cataloid nanometer grain preparation method |
| US20170349788A1 (en) * | 2016-06-01 | 2017-12-07 | Shanghai Xinanna Electronic Technology Co., LTD | Polydisperse large-particle-size silica sol and method of preparing the same |
Non-Patent Citations (2)
| Title |
|---|
| 孔慧: "一种非球形纳米二氧化硅颗粒制备新方法", 《材料导报B：研究篇》 * |
| 董越: "非球形氧化硅磨粒的制备及其CMP特性和机理", 《中国博士学位论文全文数据库 工程科技I辑》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115785819A (en) * | 2022-11-11 | 2023-03-14 | 万华化学集团电子材料有限公司 | Silicon wafer polishing composition and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI541335B (en) | Silicon wafer polishing composition | |
| US20190185715A1 (en) | Polishing liquid for cmp and preparation method and use thereof | |
| CN104321850B (en) | Wafer grinding Liquid composition | |
| JP6422325B2 (en) | Polishing liquid composition for semiconductor substrate | |
| CN115058199B (en) | High-dispersion ball-like nano cerium oxide polishing solution and application thereof | |
| CN110003798A (en) | A kind of polishing fluid and its preparation method and application | |
| CN114605923A (en) | Large-size silicon edge polishing solution and preparation method thereof | |
| CN104312441B (en) | Silicon cerium polishing fluid and preparation method thereof | |
| CN104694081A (en) | Cobalt-containing doped silicon dioxide nano-composite abrasive grain sol and preparation method thereof, and polishing solution and preparation method thereof | |
| CN104745146A (en) | Nano-composite abrasive particle sol containing cerium-doped silicon dioxide, polishing agent and preparation method thereof | |
| CN104357012A (en) | Abrasive compound, preparation method thereof and application thereof to chemico-mechanical polishing | |
| CN103896287A (en) | Non-spherical silicon dioxide sol and preparation method thereof | |
| CN107189693A (en) | A kind of A is to sapphire chemically mechanical polishing polishing fluid and preparation method thereof | |
| CN108034362B (en) | Composite polishing solution and preparation method thereof | |
| CN113150696B (en) | Polishing solution for reducing micro scratches on surface of silicon wafer | |
| CN113502128B (en) | In-situ formed micro-nano bubble polishing solution, preparation method and application thereof | |
| CN102816530B (en) | A kind of chemical mechanical polishing liquid | |
| JP2002338951A (en) | Hydrothermally treated colloidal silica for polishing agent | |
| CN104531067A (en) | Hybrid abrasive as well as preparation method and uses thereof in ultra-precision polishing | |
| CN112210346A (en) | Quaternized spherical alpha-alumina @ gamma-alumina composite abrasive particle and preparation method thereof | |
| CN113773806B (en) | Nano silicon dioxide abrasive material and preparation method and application thereof | |
| CN113004804B (en) | Polishing solution for edge of large-size silicon wafer, preparation method of polishing solution and polishing method | |
| CN105176492A (en) | Lanthanum-doped silicon dioxide sol composite abrasive particles, polishing solution composition and preparation methods of lanthanum-doped silicon dioxide sol composite abrasive particles and polishing solution composition | |
| CN105694811A (en) | Zinc doped silica sol composite abrasive particles, polishing agent composition and preparation method of polishing agent composition | |
| CN114083429A (en) | Processing method of ion-doped gadolinium gallium garnet wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20220610 |