CN114603403B - Processing method of diamond angle sputtering target material - Google Patents
Processing method of diamond angle sputtering target material Download PDFInfo
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- CN114603403B CN114603403B CN202210256262.9A CN202210256262A CN114603403B CN 114603403 B CN114603403 B CN 114603403B CN 202210256262 A CN202210256262 A CN 202210256262A CN 114603403 B CN114603403 B CN 114603403B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
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- Mechanical Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
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Abstract
The invention provides a processing method of a diamond angle sputtering target material, and belongs to the field of target material preparation. The method specifically comprises the following steps: grinding the upper surface and the lower surface of the target blank to obtain a target with a final thickness; then grinding the side surface of the target material to obtain the target material reaching the final length and width dimensions; grinding the side surface of the target material through diamond angle edges to obtain a diamond angle edge target material; and finally, carrying out finish grinding treatment on the sputtering surface of the obtained target material to obtain the diamond sputtering target material. Compared with the traditional method, the processing method has the advantages of short processing time, low cost, good product quality and high product qualification rate.
Description
Technical Field
The invention belongs to the technical field of target preparation, and particularly relates to a processing method of a diamond angle sputtering target.
Background
The Xie Ba material is mainly applied to the electronic and information industries, such as the manufacture of integrated circuits, information memories, liquid crystal displays, laser memories, electronic control devices and the like; can also be applied to the field of glass coating manufacturing; can also be applied to manufacturing industries such as wear-resistant materials, high-temperature corrosion resistance, high-grade decorative articles and the like. With the rapid development of the electronic industry, the integration level of integrated circuit electronic devices is continuously improved in the process of manufacturing integrated circuits, and the requirements of the manufacturing process on the integrated circuits Xie Bacai are more and more strict. For the material of Xie Ba, the general quality requirements mainly include size, flatness, purity, synthetic content, density, grain size and defect control. In addition, the requirements on surface roughness, resistance value, grain size uniformity, composition and structure uniformity, foreign matter (oxide) content and size, demagnetizing rate, ultra-high density, ultra-fine grains and the like are included. As technology advances, the manufacturing area places higher and more quality demands on the sputtering Xie Bacai. For example, targets requiring that the sputtering surface is no longer planar in structure include targets having V-shaped, concave and beveled shapes. However, in the current machining process of non-planar structure target manufacturing, the phenomenon of edge and corner collapse of the target is easy to occur, the problems of low target machining yield, high cost and time and labor waste in the machining process exist, and particularly in the machining of diamond targets, the target needs to be turned over to be repositioned during machining due to the special structure, so that the machining progress and efficiency are greatly reduced.
Therefore, developing a diamond target processing method with high product qualification rate, high processing efficiency and low production cost becomes a technical problem to be overcome.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a processing method of a diamond angle sputtering target material.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows: the invention provides a processing method of a diamond angle sputtering target material, which comprises the following steps:
(1) Grinding the upper surface and the lower surface of the target blank to obtain a target with a final thickness;
(2) Grinding the side surface of the target material obtained in the step (1) to obtain the target material with the final length and width dimensions;
(3) Grinding the side surface of the target material obtained in the step (2) through diamond angle edges to obtain a diamond angle edge target material;
(4) And (3) performing finish grinding treatment on the sputtering surface of the target material obtained in the step (3) to obtain the diamond sputtering target material.
The invention relates to a processing method of a diamond angle sputtering target material, which comprises the steps of firstly, grinding irregular-shaped target material blanks on the upper surface and the lower surface to obtain a target material with flat upper surface and flat lower surface, and meanwhile, the thickness of the target material reaches the thickness of the final diamond sputtering target material. And then, according to the final length and width dimensions of the diamond sputtering target, grinding the side face of the target in the previous step, and processing the rectangular prism target, wherein the length and width dimensions of the side face are the same as the final length and width dimensions of the diamond sputtering target. Further, the side surface of the straight quadrangular prism-shaped target is processed by using an angle grinding wheel to form a diamond-shaped angle edge of the target. Finally, manually grinding the sputtering surface of the target material to prepare the diamond angle sputtering target material with the dimensional accuracy and the surface roughness meeting the requirements. Compared with the traditional method, the method has the advantages of short processing time, low cost, good product quality and high product qualification rate.
As a preferred embodiment of the present invention, in the steps (1) to (3), the grinding treatment is grinding using a grinding wheel; the mesh number of the grinding wheel is 150-200 meshes.
The inventors have studied that too small a number of grinding wheels causes a problem of large surface roughness, while too high a number of grinding wheels reduces grinding efficiency.
As a preferred embodiment of the invention, in the steps (1) to (3), the rotating speed of the grinding wheel in the grinding treatment process is 3500-4500r/min, the feeding amount of the grinding wheel is 0.5-1 mm/time, and the feeding speed is 80-120mm/min.
Through researches, the inventor can ensure the yield of the target material while ensuring the grinding efficiency without edge and angle collapse on the surface of the target material under the grinding condition.
As a preferred embodiment of the present invention, in step (1) to step (2), the grinding treatment uses a planar resin diamond wheel.
As a preferred embodiment of the present invention, in the step (3), the grinding wheel used in the grinding treatment is a chamfer resin diamond grinding wheel; the chamfer resin diamond grinding wheel comprises a single-sided chamfer resin diamond grinding wheel and a double-sided chamfer resin diamond grinding wheel.
As a preferred embodiment of the present invention, in the step (3), the shape of the single-sided chamfer resin diamond wheel includes a truncated cone shape; the shape of the double-sided chamfer resin diamond grinding wheel comprises two horizontally symmetrical truncated cone shapes.
In the step (3), the target material obtained in the step (2) is fixed on a platform, two adjacent side surfaces are ground by using a single-sided chamfer resin diamond grinding wheel, and then the platform and the target material are turned over to grind the two remaining side surfaces, so that the diamond-angle side target material is obtained.
The inventor finds that the target is fixed on the platform before diamond edge processing, so that the target and the platform do not need to be repositioned during turn-over processing, errors caused by the turn-over process can be avoided, the processing precision of the target is ensured, and the production efficiency is improved.
In the step (3), the side surface of the target material obtained in the step (2) is ground by using different grinding surfaces of the double-sided chamfer resin diamond grinding wheel, so as to obtain the diamond-angle side target material.
The inventor finds that four diamond edges of a diamond target can be processed at one time by using the double-sided chamfer resin diamond grinding wheel, and the processing process does not need to turn over and reposition the target, so that the processing precision and the production efficiency can be improved.
As a preferred embodiment of the present invention, in the step (4), the finish grinding treatment is manual grinding using a grinding wheel and silicon carbide; the grinding disc comprises a cast iron grinding disc; the silicon carbide is W28 silicon carbide.
The target processing method is applied to diamond angle sputtering target preparation.
Compared with the prior art, the invention has the following beneficial effects:
(1) The diamond angle sputtering target material with the dimensional accuracy and the surface roughness meeting the requirements is prepared by the processing method of the diamond angle sputtering target material.
(2) According to the method, the target is fixed on the platform before diamond edge machining, so that the target and the platform do not need to be repositioned during turn-over machining, the machining precision of the target can be effectively guaranteed, and the production efficiency is improved.
(3) The method can process four diamond edges of the diamond target at one time by using the double-sided chamfer resin diamond grinding wheel, and the processing process does not need to turn over and reposition the target, so that the processing precision and the production efficiency can be more effectively ensured.
Drawings
FIG. 1 is a schematic diagram of the process flow of the present invention.
Fig. 2 is a schematic diagram of a diamond-shaped angle edge grinding process for a target in embodiment 1 of the present invention.
FIG. 3 is a schematic view of diamond-shaped angle edge grinding process for a target material according to embodiment 2 of the present invention
FIG. 4 is a schematic view of diamond-shaped angle edge grinding process for a target material according to embodiment 3 of the present invention
Detailed Description
For a better description of the objects, technical solutions and advantages of the present invention, the present invention will be further described with reference to the following specific examples. The experimental methods described in the examples are all conventional methods unless otherwise specified; the reagents and materials are commercially available unless otherwise specified.
Example 1
As an embodiment of the processing method of the diamond angle sputtering target material, the specific implementation steps comprise:
(1) And (3) processing the following steps: the upper surface and the lower surface of the target are ground by using a planar resin diamond grinding wheel, and the layered grinding treatment ensures the thickness and the size requirements of the target. Wherein the diameter of the plane resin diamond grinding wheel is 100mm-130mm, the granularity is 150-200 meshes, the rotating speed is 3500-4500r/min, the feeding amount is 0.5-1mm each time, and the feeding speed is 80-120mm/min.
(2) And (3) side surface machining: and the cylindrical resin diamond grinding wheel is used for carrying out grinding treatment on the side edge of the target material, and layered grinding treatment is carried out, so that the length and width size requirements of the target material are ensured. Wherein the diameter of the cylindrical resin diamond grinding wheel is 70mm-100mm, the granularity is 150-200 meshes, the rotating speed is 3500-4500r/min, the feeding amount is 0.5-1mm each time, and the feeding speed is 80-120mm/min.
(3) Diamond angle processing: and (3) carrying out grinding processing on two adjacent sides of the diamond angle of the target material by using a customized single-sided chamfer resin diamond grinding wheel, and then turning over and grinding the other two sides, wherein after turning over, the target material needs to be repositioned and the surface of the target material is marked. And sequentially grinding and processing diamond edges in layers in the grinding process. The angle of the resin diamond grinding wheel can be according to product design, the granularity of the single-sided chamfer resin diamond grinding wheel is 150-200 meshes, the rotating speed is 3500-4500r/min, the feeding amount is 0.5-1mm each time, and the feeding speed is 80-120mm/min.
(4) And (3) finishing: the target sputtering surface is manually ground for finish machining, the cast iron grinding disc is used, and W28 silicon carbide is used for manual grinding, so that flaws such as tool marks and scratches in the grinding process of equipment are removed, and the roughness of the target sputtering surface meets the product requirements.
Example 2
As an embodiment of the processing method of the diamond angle sputtering target material, the specific implementation steps comprise:
(1) And (3) processing the following steps: the upper surface and the lower surface of the target are ground by using a planar resin diamond grinding wheel, and the layered grinding treatment ensures the thickness and the size requirements of the target. Wherein the diameter of the plane resin diamond grinding wheel is 100mm-130mm, the granularity is 150-200 meshes, the rotating speed is 3500-4500r/min, the feeding amount is 0.5-1mm each time, and the feeding speed is 80-120mm/min.
(2) And (3) side surface machining: and the cylindrical resin diamond grinding wheel is used for carrying out grinding treatment on the side edge of the target material, and layered grinding treatment is carried out, so that the length and width size requirements of the target material are ensured. Wherein the diameter of the cylindrical resin diamond grinding wheel is 70mm-100mm, the granularity is 150-200 meshes, the rotating speed is 3500-4500r/min, the feeding amount is 0.5-1mm each time, and the feeding speed is 80-120mm/min.
(3) Diamond angle processing: after grinding processing is carried out on two adjacent sides of the diamond angle of the target material by using the customized single-sided chamfer resin diamond grinding wheel, the other two adjacent diamond edges need to be turned over and ground, a right-angle platform needs to be customized, and the target material needs to be placed and fixed on the right-angle platform to be sequentially ground in a layering mode. The angle of the resin diamond grinding wheel can be according to product design, the granularity of the single-sided chamfer resin diamond grinding wheel is 150-200 meshes, the rotating speed is 3500-4500r/min, the feeding amount is 0.5-1mm each time, and the feeding speed is 80-120mm/min.
(4) And (3) finishing: the target sputtering surface is manually ground for finish machining, the cast iron grinding disc is used, and W28 silicon carbide is used for manual grinding, so that flaws such as tool marks and scratches in the grinding process of equipment are removed, and the roughness of the target sputtering surface meets the product requirements.
Example 3
As an embodiment of the processing method of the diamond angle sputtering target material, the specific implementation steps comprise:
(1) And (3) processing the following steps: the upper surface and the lower surface of the target are ground by using a planar resin diamond grinding wheel, and the layered grinding treatment ensures the thickness and the size requirements of the target. Wherein the diameter of the plane resin diamond grinding wheel is 100mm-130mm, the granularity is 150-200 meshes, the rotating speed is 3500-4500r/min, the feeding amount is 0.5-1mm each time, and the feeding speed is 80-120mm/min.
(2) And (3) side surface machining: and the double-sided chamfer resin diamond grinding wheel is used for carrying out grinding treatment on the side edge of the target material, and layered grinding treatment is carried out, so that the length and width size requirements of the target material are ensured. Wherein, the diameter of the double-sided chamfer resin diamond grinding wheel is 70mm-100mm, the granularity is 150 meshes to 200 meshes, the rotating speed is 3500r/min to 4500r/min, the feeding amount is 0.5mm to 1mm each time, and the feeding speed is 80mm/min to 120mm/min.
(3) Diamond angle processing: the diamond-shaped angle edges of the target material are ground by using the double-sided chamfer resin diamond grinding wheel, and the double-sided chamfer resin diamond grinding wheel can directly process the diamond-shaped edges of the diamond-shaped target material at two angles at one time, and sequentially grind and process the diamond-shaped edges in a layering manner. The angle of the resin diamond grinding wheel can be according to product design, the granularity of the double-sided chamfer resin diamond grinding wheel is 150-200 meshes, the rotating speed is 3500-4500r/min, the feeding amount is 0.5-1mm each time, and the feeding speed is 80-120mm/min.
(4) And (3) finishing: the target sputtering surface is manually ground for finish machining, the cast iron grinding disc is used, and W28 silicon carbide is used for manual grinding, so that flaws such as tool marks and scratches in the grinding process of equipment are removed, and the roughness of the target sputtering surface meets the product requirements.
In fig. 2 to 4 in the drawings of the specification of the invention, A1 represents a diamond-shaped angle target, A2 represents a single-side chamfering grinding wheel, A3 represents a double-side angle grinding wheel, and A4 represents a right-angle platform.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the scope of the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solution of the present invention may be modified or substituted equally without departing from the spirit and scope of the technical solution of the present invention.
Claims (4)
1. The processing method of the diamond angle sputtering target material is characterized by comprising the following steps of:
(1) Grinding the upper surface and the lower surface of the target blank to obtain a target with a final thickness;
(2) Grinding the side surface of the target material obtained in the step (1) to obtain the target material with the final length and width dimensions;
(3) Fixing the target material obtained in the step (2) on a platform, grinding two adjacent side surfaces by using a single-sided chamfer resin diamond grinding wheel, and grinding the platform and the target material turnover surfaces on the two remaining side surfaces to obtain a diamond-angle side target material;
grinding the side surface of the target material obtained in the step (2) by using different grinding surfaces of the double-sided chamfer resin diamond grinding wheel to obtain a diamond-angle side target material;
the shape of the single-sided chamfering resin diamond grinding wheel comprises a truncated cone shape, and the shape of the double-sided chamfering resin diamond grinding wheel comprises two truncated cones which are horizontally symmetrical;
(4) Performing finish grinding treatment on the sputtering surface of the target material obtained in the step (3) to obtain a diamond sputtering target material;
in the step (1) to the step (3), grinding is carried out by using a grinding wheel, the mesh number of the grinding wheel is 150-200 meshes, the rotating speed of the grinding wheel in the grinding treatment process is 3500-4500r/min, the feeding amount of the grinding wheel is 0.5-1 mm/time, and the feeding speed is 80-120mm/min.
2. The method of claim 1, wherein in steps (1) to (2), the grinding treatment uses a planar resin diamond wheel.
3. The method of claim 1, wherein in step (4), the finish grinding process is manual grinding using a grinding disc and silicon carbide; the grinding disc comprises a cast iron grinding disc; the silicon carbide is W28 silicon carbide.
4. Use of a method according to any one of claims 1 to 3 for the preparation of diamond angle sputter targets.
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| CN202210256262.9A CN114603403B (en) | 2022-03-15 | 2022-03-15 | Processing method of diamond angle sputtering target material |
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| CN114603403B true CN114603403B (en) | 2023-05-26 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE4023587C2 (en) * | 1990-07-25 | 1993-11-18 | Fortuna Werke Maschf Ag | Process for the measurement-controlled peripheral grinding of radially non-circular workpieces |
| JP3862920B2 (en) * | 1999-03-11 | 2006-12-27 | 株式会社荏原製作所 | Polishing apparatus provided with attitude control device for substrate holding device |
| JP3872629B2 (en) * | 1999-03-11 | 2007-01-24 | 株式会社荏原製作所 | Polishing device provided with attitude control device for turntable device |
| US6354907B1 (en) * | 1999-03-11 | 2002-03-12 | Ebara Corporation | Polishing apparatus including attitude controller for turntable and/or wafer carrier |
| CN104416325B (en) * | 2013-08-21 | 2017-09-15 | 宁波江丰电子材料股份有限公司 | The preparation method of tungsten target material |
| CN205520820U (en) * | 2016-03-22 | 2016-08-31 | 广西晶联光电材料有限责任公司 | ITO target edging beveler |
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