CN114599148A - Inorganic flexible electronic device based on grid substrate and integration method thereof - Google Patents
Inorganic flexible electronic device based on grid substrate and integration method thereof Download PDFInfo
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K1/00—Printed circuits
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- H05K1/0277—Bendability or stretchability details
- H05K1/028—Bending or folding regions of flexible printed circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3421—Leaded components
- H05K3/3426—Leaded components characterised by the leads
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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Abstract
The application provides an inorganic flexible electronic device based on a grid substrate and an integration method thereof. An inorganic flexible electronic device comprising: the lead comprises a conduction part and a packaging part packaged outside the conduction part; and the grid substrate is provided with the conducting wires. The integration method provided by the application comprises the following steps: obtaining a top grid substrate, a bottom grid substrate, a first flexible block, a second flexible block, a third flexible block and a lead; disposing an underlying grid substrate on a first flexible block; adhering the wire to be assembled to the second flexible block; aligning a second flexible block containing a lead with a first flexible block containing a bottom grid substrate under a microscope, taking down the lead, and welding the lead to the bottom grid substrate; and carrying the top grid substrate on the third flexible block, aligning the top grid substrate with the bottom grid substrate, positioning the lead between the two grid substrates, then taking down the third flexible block, and welding the top grid substrate to the lead.
Description
Technical Field
The application belongs to the technical field of flexible electronics, and particularly relates to an inorganic flexible electronic device based on a grid substrate and an integration method thereof.
Background
In recent years, flexible electronic devices have become a hotspot in the industry and academia. Since 2008, the advent of new flexible devices such as electronic skins and electronic eye cameras opened the era of flexible electronic devices. From the technical point of realization, flexible electronic devices are mainly classified into organic flexible electronic devices and inorganic flexible electronic devices. Organic flexible electronic devices are stretchable by using intrinsically stretchable conductive materials (mainly conductive high polymer materials), but have low carrier density, resulting in poor performance. The inorganic flexible electronic device realizes an integrally stretchable structure and has better performance by mechanical structure design of fragile materials such as silicon and metal films in the traditional microelectronic technology.
The flexible electronic has the characteristics of low elastic modulus, stretching/compressing, bending, twisting and the like, thereby subverting the expression form and the use mode of the traditional electronic device and greatly expanding the application range of the microelectronic device. Along with the improvement of the attention on health and medical treatment, the flexible electronic device is utilized to continuously detect the physiological signals of the human body, and the method is an effective way for early warning of serious diseases and prevention and control of chronic diseases. According to the function classification, the flexible electronic device is integrated with different parts of the human body, so that the detection of basic physiological parameters such as body temperature, respiration, heartbeat, blood oxygen, blood pressure, pulse and the like can be realized; detecting electrophysiological signals such as electrocardio, myoelectricity and electroencephalogram, and detecting biochemical parameters such as sweat, blood sugar and the like; and functions of measuring ambient temperature, humidity and ultraviolet, treating, collecting energy, displaying body surface, sensing touch and the like. The flexible electronic device provides accurate and effective monitoring feedback and clinical guidance for chronic diseases such as hyperglycemia, cardiovascular and cerebrovascular diseases and the like.
Based on the mechanical property and the circuit function property of the extensible inorganic flexible electronic device, the system extensibility and the integration level of the flexible electronic device are improved, and the flexible electronic device is a necessary approach for industrialization of the flexible electronic device.
1. Elongation rate
At present, the mechanical design structure of the extensible flexibility of the lead mainly comprises: a corrugated structure, an euler's bent island bridge structure, a snake-shaped wire type island bridge structure, a parting wire type island bridge structure, a three-dimensional spiral wire structure, a planar spiral wire structure, a paper-cut/paper-folded structure and the like. The snake-shaped lead wire type island bridge structure is a common structure in the field of flexible electronics, a device is separated from a lead wire, an island is used for attaching a functional element, and the deformation of a structural bridge is used for improving the integral extensibility. After the snake-shaped bridge structure is pulled and pressed, the curved beam simultaneously generates in-plane deformation and out-of-plane buckling, and the extensibility is larger than that of a straight bridge. Based on the serpentine bridge structure, a serpentine wire is developed and becomes a common wire form.
The serpentine wire and the derived structure thereof have larger theoretical extensibility. However, in practical use, especially after the structured wires are encapsulated (a common encapsulation form is PDMS cast solid encapsulation, i.e. the whole structured wire is embedded in the cured PMDS), the serpentine wires attached or cast encapsulated to the substrate exhibit limited out-of-plane buckling deformation after stretching, and are associated with significant stress concentration and are prone to failure. Therefore, the stretchability of the serpentine wire is reduced, and the stretchability of the device is poor.
2. Degree of integration
The structural design of the wire increases the length, the width and the bending span of the wire, and enhances the ductility of the wire. But simultaneously, the design position and the area ratio of the electronic element are reduced, and the functional efficiency and the integration level of the flexible electronic device are reduced.
The most direct method for improving the integration level of the flexible electronic device is to arrange the functional elements in space by utilizing the vertical space. The folding or stacking mode can be adopted to increase the integration level of the device. However, in the prior art, a packaging material such as silicon rubber is used to integrally package the flexible electronic device. After the wires are stretched to generate deformation, the actual extension rate is still far lower than that of the wires before encapsulation.
Therefore, the prior art cannot achieve both the device ductility and the integration degree, and the current packaging and integration technology cannot achieve balance between the two technologies.
In addition, in practical application, the inorganic flexible electronic device is not matched with skin mechanics, so that a large measurement error is introduced, and the discomfort of long-term wearing of a user is increased.
Disclosure of Invention
To ameliorate or solve at least one of the problems mentioned in the background, the present application proposes a mesh substrate-based inorganic flexible electronic device and an integration method thereof.
The inorganic flexible electronic device based on the grid substrate comprises:
the lead comprises a conduction part and a packaging part packaged outside the conduction part; and
a mesh substrate, the conductive lines being disposed on the mesh substrate.
In at least one embodiment, the material of the conductive portion includes at least one of copper, gold; and/or the material of the packaging part is polyimide.
In at least one embodiment, the grid substrate comprises an array of substrate repeat units, the grid shape of the substrate repeat units being formed by U-shaped sides.
In at least one embodiment, the wires and the grid substrate are provided with pads through which the wires are soldered to the grid substrate.
In at least one embodiment, the inorganic flexible electronic device includes two of the mesh substrates, the conductive lines being disposed between the two opposing mesh substrates.
In at least one embodiment, the inorganic flexible electronic device comprises a plurality of layers of the mesh substrate and a plurality of layers of the conductive wires, the mesh substrate and the conductive wires constituting a multilayer structure of a first layer mesh substrate-a first layer conductive wire … … nth layer mesh substrate-nth layer conductive wire-nth + 1 layer mesh substrate, n > 1.
In at least one embodiment, the mesh substrate-based inorganic flexible electronic device further comprises an electronic element connected to the conductive portion of the conductive wire of the i-th layer, and the mesh substrate of the i + 1-th layer or the mesh substrate of the i-th layer is provided with an opening capable of accommodating the electronic element.
In at least one embodiment, the grid substrate based inorganic flexible electronic device further comprises a connector, and the lead and the grid substrate are controlled in distance through the connector.
The inorganic flexible electronic device in the integration method of the inorganic flexible electronic device based on the grid substrate is the inorganic flexible electronic device, and the integration method comprises the following steps:
obtaining a top grid substrate, a bottom grid substrate, a first flexible block, a second flexible block, a third flexible block and a lead;
disposing the underlying grid substrate on the first flexible block;
adhering the wire to be assembled to the second flexible block;
aligning the second flexible block containing the lead wire with the first flexible block containing the bottom grid substrate under a microscope, taking the lead wire down, and welding the lead wire to the bottom grid substrate;
and carrying the top grid substrate on a third flexible block, aligning the top grid substrate with the bottom grid substrate, positioning the lead between the two grid substrates, then taking down the third flexible block, and welding the top grid substrate to the lead.
In at least one embodiment, further comprising:
the inorganic flexible electronic device comprises a plurality of leads, and the leads are welded and fixed.
The inorganic flexible electronic device and the integration method provided by the application ensure relatively large integration level while increasing the extension rate of the flexible electronic device.
Drawings
Fig. 1A shows a schematic structural view of a mesh substrate-based inorganic flexible electronic device wire according to an embodiment of the present application.
Fig. 1B shows a side view of the lead of fig. 1A.
Fig. 2A shows a schematic structural diagram of a mesh substrate based inorganic flexible electronic device according to an embodiment of the present application.
Fig. 2B shows one repeating unit of the mesh substrate in fig. 2A.
Fig. 2C shows a stress-strain diagram of a mesh substrate based inorganic flexible electronic device according to an embodiment of the present application.
Fig. 3 shows a schematic structural view of a mesh substrate based inorganic flexible electronic device according to an embodiment of the present application.
Fig. 4A, 4B, 4C, 4D, 4E, 4F, 4G, 4H show an integration flow diagram of a mesh substrate based inorganic flexible electronic device according to an embodiment of the present application.
Fig. 5 shows a graph of the number of stretching cycles versus the change in conductivity of wires for a mesh-based inorganic flexible electronic device according to an embodiment of the present application and a conventional encapsulation format.
Fig. 6A and 6B show schematic diagrams of a multilayer structure of an inorganic flexible electronic device based on a mesh substrate according to an embodiment of the present application.
Fig. 7A and 7B are schematic diagrams illustrating an internal structure of an inorganic flexible electronic device based on a mesh substrate according to an embodiment of the present application.
Detailed Description
Exemplary embodiments of the present application are described below with reference to the accompanying drawings. It should be understood that the detailed description is only intended to teach one skilled in the art how to practice the present application, and is not intended to be exhaustive or to limit the scope of the application.
The present application provides a mesh substrate-based inorganic flexible electronic device (hereinafter, sometimes simply referred to as "flexible electronic device") including a lead wire 1 and a mesh substrate 2.
Referring to FIG. 1A, the wireThe extending direction of 1 may be serpentine. Illustratively, the line width W of the wire 1SMay be 60 μm, the span T of the wire 1SMay be 0.52mm, the length L of the straight segment in the lead 1SAnd may be 0.26 mm.
The lead 1 includes a conductive portion 11 and a sealing portion 12 sealed outside the conductive portion 11. Illustratively, the material of the conductive portion 11 may be copper, gold, or the like, and is preferably copper. The material of the sealing portion 12 is Polyimide (PI) or the like.
Referring to fig. 1B, in one embodiment of the present application, the conductive line 1 may be a sandwich structure of an encapsulation portion 12-a conductive portion 11-an encapsulation portion 12. Illustratively, the thickness t of the top or bottom layer of the encapsulant 1212May be 25 μm, the thickness t of the conductive part 1111May be 0.7 μm. It can be understood that the line width W of the conductive line 1SIn the direction, the width of the conductive part 11 is smaller than the line width W of the conductive line 1STo prevent the conductive part 11 from being exposed to the outside.
Exemplarily, taking the material of the conductive part 11 as copper and the material of the encapsulation part 12 as polyimide as an example, the present application provides a method for manufacturing a lead 1, which includes:
(1) firstly, spin-coating a sacrificial layer on a silicon wafer;
(2) after the sacrificial layer is solidified, spin-coating a layer of PI (polyimide) precursor solution, and thermally baking to solidify the PI into a film, so as to form a bottom layer PI in the sandwich structure, wherein the thickness of the bottom layer PI can be several micrometers to dozens of micrometers generally;
(3) growing a copper (Cu) film on the bottom layer PI using a metal film growth apparatus, such as an electron beam evaporation apparatus, and the thickness of the Cu film may be several hundred nanometers;
(4) patterning the metal film by using a general photoetching process to process a designed snake-shaped lead shape;
(5) spin-coating a layer of PI precursor solution again, and curing the solution into a film by hot baking, wherein the layer of PI is used as the top layer PI in the three layers of wires, and the thickness of the PI layer is generally consistent with that of the bottom layer PI;
(6) growing another layer of metal on the top layer PI, and performing a photoetching processing step to obtain a pattern with a shape similar to the size of the metal copper wire as an etching mask;
(7) removing all PI except the area covered by the top metal mask in the three-layer lead by using dry etching, for example, using reactive ion etching equipment, and then removing the metal above the top PI by using metal etching liquid to obtain the PI-Cu-PI three-layer structure lead; and
(8) and dissolving the sacrificial layer, and releasing and taking down the manufactured PI-Cu-PI three-layer wire from the silicon wafer.
The grid substrate 2 is the carrier substrate for the wires 1. Referring to fig. 2A, the mesh in the mesh substrate 2 may be horseshoe-shaped. Referring to fig. 2B, the mesh substrate 2 includes substrate repeating units 23 arranged in an array, and the substrate repeating units 23 are in the shape of horseshoe-shaped edges (U-shaped edges). Referring to fig. 2C, the substrate repeating unit 23 is first pulled to form a triangle when being stretched, and the stress-strain curve at this stage is relatively flat; after the base repeating unit 21 is further stretched, the structure itself is elongated, and at this time, the stress-strain curve is steeper, that is, the stress-strain curve in the stretching process is in a "J" shape, which is matched with the mechanical properties of human skin.
The grid substrate 2 is a main stressed object, the thickness of the lead 1 (the relative position and the connection mode of the lead 1 and the grid substrate 2 are shown later) arranged in the grid substrate 2 is smaller than 1/100 of the thickness of the grid substrate 2, the influence of the lead 1 on a stress-strain curve can be ignored, and the mechanical property displayed by the flexible electronic device is consistent with that of the grid substrate 2.
The flexible electronic device is mechanically compatible with human skin, so that the measurement error of the flexible electronic device is small, and the wearing comfort of the flexible electronic device is high. The material of the mesh substrate 2 may be, but is not limited to, polyimide. The mesh shape of the mesh base 2 is also not limited to the horseshoe shape, and may also be, for example, a triangle, a hexagon, or the like.
The mesh substrate 2 is also referred to as a package substrate for the wires 1, and the mesh substrate 2 may include a top mesh substrate 21 and a bottom mesh substrate 22, and the wires 1 may be packaged between the top mesh substrate 21 and the bottom mesh substrate 22.
Exemplarily, the present application provides an integrated assembly method of a wire 1 and a mesh substrate 2, which includes:
(S1) referring to fig. 4A and 4B, the bottom grid substrate 22 is supported on a flat surface by a block 51 of appropriately sized PDMS (polydimethylsiloxane), and the other side of the PDMS may be placed on a glass plate;
(S2) referring to fig. 4C and 4D, taking another PDMS block 52 with a size suitable for the lead 1 as a stamp for transfer, and adhering the lead 1 to be assembled to the stamp;
(S3) aligning the PDMS block 52 containing the lead 1 with the PDMS block 51 of the grid substrate 2 under a microscope, after aligning, pressing the two in contact, and removing the PDMS block 52 on the lead 1, and applying solder paste to the via holes 31 of the pads 3 opposite to the lead 1 and the underlying grid substrate 22, and heating and welding by using a hot plate;
(S4) referring to fig. 4G and 4H, the process is repeated (S1) and the top grid substrate 21 is carried on another PDMS block, and the top grid substrate 21 is aligned with the leads 1-bottom grid substrate 22 by a method similar to that of the process (3), and then the top grid PDMS block is removed, coated with solder paste, and thermally welded using a hot plate. Thus, a packaging system of a top grid substrate 21-a wire 1-a bottom grid substrate 22 is obtained.
(S5) if there are more wires to be soldered in one plane, after step (S2), step (S2) is performed again until all wires to be carried by the mesh substrate are soldered and fixed, and then step (S3) and step (S4) are performed.
It will be appreciated that the PDMS block may be replaced with other flexible blocks.
When the wire 1 is deformed under force, the out-of-plane deformation of the wire 1 can be accommodated by the mesh apertures of the mesh substrate 2. Compared with the traditional solid packaging mode of PDMS silicone rubber, the method and the device have the advantages that the limitation of the substrate on the deformation of the lead is weakened, so that the extensibility of the packaged lead is close to the free extensibility of the structure lead when the lead is not packaged, and the extensibility of the flexible electronic device is finally improved.
Referring to fig. 5, the elongation rate of the system obtained by finite element analysis shows that the effective elongation rate of the conventional PDMS solid-encapsulated wire 1 is 5% to 5.5% (when the elongation rate is 5%, the number of stretching cycles exceeds 10000, and when the elongation rate is 5.5%, the number of stretching cycles can reach 9000, i.e. the effective elongation rate can be considered to be 5% to 5.5%). The effective elongation of the wire 1 encapsulated by the grid substrate 2 of the present application is 47% (when the elongation is 50%, the stretching cycle is 2500 times to break, and when the elongation is 45%, the stretching cycle is more than 10000 times, i.e. the effective elongation is considered to be between 45% and 50%, for example, 47% elongation capable of being 5500 cycles). That is, the effect of the present application in increasing the elongation is excellent.
In addition, the air permeability of the grid substrate 2 is good, when the integrated electronic component 4 (introduced later) detects the temperature, humidity and the like of a human body, the detection is accurate, and the wearing comfort level is good.
The wires 1 in the flexible electronic device may be distributed in only one layer or in a plurality of layers.
Referring to fig. 3, for a single layer wire flexible electronic device, it is generally in the form of one wire 1 encapsulated by two layers of mesh substrate 2.
When the lead is multi-layered, the structure of the lead can be a multi-layered flexible electronic device with a first layer of grid substrate 2-a first layer of lead 1-a second layer of grid substrate 2-a second layer of lead 1 … …, an nth layer of grid substrate 2-an nth layer of lead 1-an n +1 th layer of grid substrate 2. The stacked design significantly improves the integration of flexible electronics.
Referring to fig. 6A and 6B, taking five layers of the wires 1 as an example, the present application shows the distribution positions of five layers of the wires 1. It will be appreciated that the sixth layer of the mesh substrate 2 is not shown in the figures. The wires 1 of each layer can generate relatively free out-of-plane deformation, and the out-of-plane deformation is accommodated by the pores of the grid substrate 2, so that the stress concentration of the wires 1 is relieved, and the ductility of the device is not influenced while the integration degree of the device is improved by multilayer lamination. The unification of the integration level and the ductility of the device is realized.
Referring to fig. 7A, the flexible electronic device may further include an electronic component 4 such as a chip capacitor, a chip resistor, a chip inductor, or a chip. The thickness of the electronic component 4 is typically in the order of millimetres, usually 0.3 mm. While the thickness of the conductor 1 is typically in the order of micrometers, for example 50-90 μm. I.e. the thickness of the electronic component 4 is much larger than the thickness of the conductor 1 (conductor layer).
Referring to fig. 7B, in order to make the electronic component 4 have a sufficient mounting space, the lead 1 and the mesh substrate 2 may be connected and fixed by soldering using a small connecting body 6 (e.g., a small column obtained by cutting a silver wire having a diameter of 0.1 mm).
For larger chips, such as microcontroller unit chips, the thickness is typically 0.5mm to 0.8 mm. In order to accommodate electronic components 4 of such a large thickness arranged on the i-th layer of conductors 1, it is possible to arrange electronic components 4 on the i-th layer of structured conductors in a forward (e.g. upward) or reverse (e.g. downward) direction. Meanwhile, holes with the size consistent with that of the electronic element 4 are formed in the (i + 1) th layer of grid substrate or the ith layer of grid substrate, and the electronic element 4 is accommodated by the holes. The design has the advantages that the vertical space of the flexible electronic device can be fully utilized, and the integration level of the flexible electronic device is further improved.
According to the method, the extension rate of the flexible electronic device is increased, the relatively large integration level is guaranteed, and the mechanical matching of the flexible electronic device and the skin is realized.
While the foregoing is directed to the preferred embodiment of the present application, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the application.
Claims (10)
1. An inorganic flexible electronic device based on a mesh substrate, comprising:
a lead (1) including a conductive portion (11) and a sealing portion (12) sealed outside the conductive portion (11); and
a mesh substrate (2), the wires (1) being arranged on the mesh substrate (2).
2. The mesh substrate-based inorganic flexible electronic device according to claim 1,
the material of the conduction part (11) comprises at least one of copper and gold; and/or the material of the encapsulation (12) is polyimide.
3. The mesh substrate-based inorganic flexible electronic device according to claim 1,
the grid substrate (2) comprises substrate repeating units (23) which are arranged in an array, and the shape of each substrate repeating unit (23) is formed by U-shaped edges.
4. The mesh substrate-based inorganic flexible electronic device according to claim 1,
the wire (1) and the grid substrate (2) are both provided with a bonding pad (3), and the wire (1) is welded on the grid substrate (2) through the bonding pad (3).
5. The mesh substrate-based inorganic flexible electronic device according to claim 1,
the inorganic flexible electronic device comprises two grid substrates (2), and the conducting wire (1) is arranged between the two opposite grid substrates (2).
6. The mesh substrate-based inorganic flexible electronic device according to claim 5,
the inorganic flexible electronic device comprises a plurality of layers of the grid substrate (2) and a plurality of layers of the leads (1), wherein the grid substrate (2) and the leads (1) form a multilayer structure of a first layer of grid substrate-a first layer of leads … …, an nth layer of grid substrate-an nth layer of leads-an n +1 th layer of grid substrate, and n is more than 1.
7. A mesh substrate based inorganic flexible electronic device according to claim 6, characterized in that it comprises an electronic component (4), said electronic component (4) being connected to the conductive part (11) of the wire (1) of the i-th layer, the mesh substrate (2) of the i + 1-th layer or the mesh substrate (2) of the i-th layer being provided with openings capable of receiving said electronic component (4).
8. The mesh substrate based inorganic flexible electronic device according to claim 5 or 6, further comprising a connector (6), wherein the lead (1) and the mesh substrate (2) are spaced apart by the connector (6).
9. A method for integrating an inorganic flexible electronic device based on a grid substrate, wherein the inorganic flexible electronic device is the inorganic flexible electronic device of any one of claims 1 to 8, the method comprising:
obtaining a top grid substrate (21), a bottom grid substrate (22), a first flexible block, a second flexible block, a third flexible block and a lead (1);
disposing the underlying grid substrate (22) on the first flexible block;
-adhering the conductor (1) to be assembled to the second flexible block;
aligning under a microscope the second flexible block containing the wire (1) with the first flexible block containing the underlying grid substrate (22) and removing the wire (1), welding the wire (1) to the underlying grid substrate (22);
and carrying the top layer grid substrate (21) on a third flexible block, aligning the top layer grid substrate (21) and the bottom layer grid substrate (22), positioning the lead (1) between the two grid substrates, then removing the third flexible block, and welding the top layer grid substrate (21) on the lead (1).
10. The method of integrating inorganic flexible electronic devices based on grid substrates of claim 9, further comprising:
the inorganic flexible electronic device comprises a plurality of leads (1), and the leads (1) are welded and fixed.
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