CN114583430A - Resonator, dielectric filter, and communication device - Google Patents

Resonator, dielectric filter, and communication device Download PDF

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Publication number
CN114583430A
CN114583430A CN202011379343.5A CN202011379343A CN114583430A CN 114583430 A CN114583430 A CN 114583430A CN 202011379343 A CN202011379343 A CN 202011379343A CN 114583430 A CN114583430 A CN 114583430A
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blind
blind holes
resonator
holes
blind hole
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CN114583430B (en
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蒲国胜
乔冬春
市川胜
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00Resonators of the waveguide type
    • H01P7/10Dielectric resonators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/2002Dielectric waveguide filters
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00Reducing energy consumption in communication networks
    • Y02D30/70Reducing energy consumption in communication networks in wireless communication networks

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Abstract

The application provides a resonator, a dielectric filter and a communication device. The resonator may include: the dielectric block comprises a first surface and a second surface which are oppositely arranged, one or more blind holes are respectively arranged on the first surface and the second surface, and the blind holes are marked as a first blind hole and a second blind hole, wherein the projection of the first blind hole on the side surface of the dielectric block is overlapped with the projection of the second blind hole on the side surface of the dielectric block; and covering the outer wall of the dielectric block and the hole walls of the blind holes on the two oppositely arranged surfaces with the metal layer. Through the application, not only can the miniaturization be realized, the resonant frequency is reduced, the method can be suitable for more scenes, such as highly limited scenes, and is simple and easy to process, and the realization cost is low.

Description

Resonator, dielectric filter, and communication device
Technical Field
The application relates to the technical field of communication, in particular to a resonator, a dielectric filter and communication equipment.
Background
With the rapid spread of mobile communications, the layout density of base stations is becoming higher. In order to reduce the installation difficulty and the influence on the surrounding environment as much as possible, an increasing demand is placed on the miniaturization of the base station. The base station transceiver system mainly comprises a high-frequency filter, an oscillator, a power amplifier, a modem and a power supply. Among them, the filter is high in volume and weight, and therefore miniaturization of the filter is particularly important.
The filter includes one or more resonators. Therefore, the miniaturization of the resonator is an important approach for the miniaturization of the base station filter.
Disclosure of Invention
The application provides a resonator, a dielectric filter and a communication device, which can realize the miniaturization of the resonator, the dielectric filter or a base station, simultaneously reduce the resonance frequency of the resonator or the dielectric filter, and have the advantages of simple and easy processing and low realization cost.
In a first aspect, a resonator is provided. The resonator may include: the dielectric block comprises a first surface and a second surface which are oppositely arranged, wherein N first blind holes are formed in the first surface, M second blind holes are formed in the second surface, and N, M are integers which are more than 1 or equal to 1; the projection of the first blind hole on the side face of the dielectric block is overlapped with the projection of the second blind hole on the side face of the dielectric block; and the metal layer covers the outer wall of the dielectric block, the hole wall of the first blind hole and the hole wall of the second blind hole.
Illustratively, the first surface is an upper surface and the second surface is a lower surface. In this example, the opening direction of the N first blind holes is from top to bottom of the medium, and the opening direction of the M second blind holes is from bottom to top of the medium.
Illustratively, N, M may be equal.
Based on above-mentioned technical scheme, through opening a plurality of blind holes in the dielectric block, and respectively from two surperficial trompils that set up relatively, and the projection of the blind hole on a surface at the dielectric block side has the overlap with the projection of the blind hole on another surface at the dielectric block side. After the inner walls of the surface of the dielectric block, the first blind hole and the second blind hole are covered with the metal layer, the capacitance of the metalized blind holes except the capacitance at the bottom of the holes can be ensured to exist between the side walls, and the capacitance between the blind holes on the first surface and the blind holes on the second surface is increased. By increasing the capacitance, a better frequency compression can be achieved, i.e. the capacitance is increased and a lower resonance frequency can be achieved.
In addition, by frequency compression, miniaturization of the resonator can also be achieved. The size (i.e. electrical length) of the resonator is wavelength dependent, for example the size of the resonator is a quarter wavelength. The lower the frequency, the larger the wavelength, the larger the size of the resonator required. Through also having the electric capacity between blind hole and the blind hole for it is more obvious to the compression effect of frequency, consequently, can realize using miniaturized resonator to realize lower resonant frequency, also can understand that, uses the scheme that this application embodiment provided, the resonator miniaturization is more outstanding.
With reference to the first aspect, in some implementations of the first aspect, the value of N is 2nAnd/or M has a value of 2mAnd the values of n and m are integers which are more than 1 or equal to 1.
Illustratively, n, m may be equal. For example, N and M are both 1, i.e., N ═ M ═ 2; for another example, N and M are both 2, i.e., N ═ M ═ 4; for another example, N and M are both 3, i.e., N-M-8.
With reference to the first aspect, in certain implementations of the first aspect, N, M are each integers greater than 1; every two first blind holes are connected through a first blind groove, and/or every two second blind holes are connected through a second blind groove.
Based on above-mentioned technical scheme, through design blind groove between the blind hole on same surface, can increase the electric capacity between the blind hole of first surface and the blind hole of second surface. For example, two first blind holes are connected by a first blind groove, and then a capacitor is also present between the first blind groove and a second blind hole on the second surface.
With reference to the first aspect, in certain implementations of the first aspect, each two first blind holes are connected by a first blind slot, and the method includes: every two first blind holes are connected through one first blind groove, and each first blind groove is connected with two first blind holes.
Based on the technical scheme, every two blind holes are connected through one blind groove, and each blind groove is only connected with two blind holes, so that the design is simple, and the cost is low.
With reference to the first aspect, in certain implementations of the first aspect, M is greater than 1, and projections of the first blind groove on the first surface are located between projections of the M second blind holes on the first surface.
Based on above-mentioned technical scheme, first blind groove is located the region that M second blind holes enclose at the projection of first surface in the projection of first surface, that is to say, first blind groove is located between two at least second blind holes to compare in the distance of first blind hole and second blind hole, the distance of first blind groove and second blind hole is more nearly, through capacitance value and distance inverse ratio, can derive, through design blind groove, can increase the electric capacity between the blind hole of first surface and the blind hole of second surface.
With reference to the first aspect, in certain implementations of the first aspect, each two second blind holes are connected by a second blind slot, including: every two second blind holes are connected through one second blind groove, and each second blind groove is connected with the two second blind holes.
With reference to the first aspect, in certain implementations of the first aspect, N is greater than 1, and projections of the second blind grooves on the second surface are located between projections of the N first blind holes on the second surface.
With reference to the first aspect, in certain implementations of the first aspect, midpoints of regions surrounded by projections of the N first blind holes on the first surface coincide with midpoints of regions surrounded by projections of the M second blind holes on the first surface; the middle point of the area defined by the projections of the M second blind holes on the second surface is superposed with the middle point of the area defined by the projections of the N first blind holes on the second surface.
Based on the technical scheme, the N first blind holes and the M second blind holes can be placed in an interdigital (inter). The N first blind holes and the M second blind holes are placed in an interdigital manner, that is, the N first blind holes and the M second blind holes are placed in an interdigital manner. Accordingly, the resonator provided by the present application may be an interdigital resonator (interdigital resonator). By having the blind holes on the first and second surfaces interdigitated, the capacitance between the blind holes of the first and second surfaces may be increased.
With reference to the first aspect, in certain implementations of the first aspect, a depth and a width of the first blind hole are both related to a resonant frequency of the resonator.
With reference to the first aspect, in certain implementations of the first aspect, a depth and a width of the second blind hole are both related to a resonant frequency of the resonator.
With reference to the first aspect, in some implementations of the first aspect, the N first blind holes and the M second blind holes are disposed on one resonator.
That is, one resonator is provided with N first blind holes and M second blind holes.
Based on above-mentioned technical scheme, compare with prior art, be equipped with a blind hole on the resonator, open a plurality of blind holes in the resonator that this application embodiment provided can make also to have the electric capacity between blind hole and the blind hole. The capacitance is increased and a lower resonance frequency can be achieved. Further, in a resonator (particularly, in a miniaturized resonator), the distance between the blind via and the blind via is very close, and the capacitance of the blind via and the blind via becomes large in inverse proportion to the capacitance according to the distance, so that it is possible to realize a lower resonance frequency using the miniaturized resonator.
With reference to the first aspect, in certain implementations of the first aspect, the first blind hole is: circular holes or regular polygonal holes.
With reference to the first aspect, in certain implementations of the first aspect, the second blind hole is: circular holes or regular polygonal holes.
In a second aspect, a method of manufacturing a resonator is provided. The resonator comprises a dielectric block and a metal layer, wherein the dielectric block comprises a first surface and a second surface which are oppositely arranged, and the manufacturing method comprises the following steps: arranging N first blind holes on the first surface, wherein N is an integer greater than 1 or equal to 1; arranging M second blind holes on the second surface, wherein M is an integer greater than 1 or equal to 1; the projection of the first blind hole on the side face of the dielectric block is overlapped with the projection of the second blind hole on the side face of the dielectric block; and covering the outer wall of the dielectric block, the hole wall of the first blind hole and the hole wall of the second blind hole with a metal layer.
Illustratively, the first surface is an upper surface and the second surface is a lower surface. In this example, N first blind holes are punched in the first surface from top to bottom of the medium, and M second blind holes are punched in the second surface from bottom to top of the medium.
Illustratively, the blind holes are formed on the surface, and the blind holes can be formed after the dielectric block is molded. Alternatively, the blind holes may be formed on the surface, or formed in one step, for example, a mold is used to form the dielectric block with the blind holes in one step.
Based on above-mentioned technical scheme, through opening a plurality of blind holes in the dielectric block, and respectively from two surperficial trompils that set up relatively, and the projection of the blind hole on a surface at the dielectric block side overlaps with the projection of the blind hole on another surface at this dielectric block side. After the inner walls of the surface of the dielectric block, the first blind hole and the second blind hole are covered with the metal layer, the capacitance of the metalized blind holes except the capacitance at the bottom of the holes can be ensured to exist between the side walls, and the capacitance between the blind holes on the first surface and the blind holes on the second surface is increased. By increasing the capacitance, a better frequency compression can be achieved, i.e. the capacitance is increased and a lower resonance frequency can be achieved.
In addition, by frequency compression, miniaturization of the resonator can also be achieved. The size of the resonator is wavelength dependent, for example the size of the resonator is a quarter wavelength. The lower the frequency, the larger the wavelength, the larger the size of the resonator required. Through also having electric capacity between blind hole and the blind hole for it is more obvious to the compression effect of frequency, consequently, can realize using miniaturized resonator to realize lower resonant frequency, also can understand that, uses the scheme that this application embodiment provided, the resonator miniaturization is more outstanding.
With reference to the second aspect, in some implementations of the second aspect, the value of N is 2nAnd/or M has a value of 2mAnd the values of n and m are integers which are more than 1 or equal to 1.
With reference to the second aspect, in certain implementations of the second aspect, N, M are each integers greater than 1; the manufacturing method further includes: the two first blind holes are connected using a first blind groove and/or the two second blind holes are connected using a second blind groove.
With reference to the second aspect, in certain implementation manners of the second aspect, every two first blind holes are connected through one first blind groove, and each first blind groove connects two first blind holes.
With reference to the second aspect, in certain implementations of the second aspect, M is greater than 1, and projections of the first blind groove on the first surface are located between projections of the M second blind holes on the first surface.
With reference to the second aspect, in certain implementation manners of the second aspect, each two second blind holes are connected through one second blind groove, and each second blind groove connects two second blind holes.
With reference to the second aspect, in certain implementations of the second aspect, N is greater than 1, and projections of the second blind grooves on the second surface are located between projections of the N first blind holes on the second surface.
With reference to the second aspect, in some implementations of the second aspect, a midpoint of a region surrounded by projections of the N first blind holes on the first surface coincides with a midpoint of a region surrounded by projections of the M second blind holes on the first surface; the middle point of the area defined by the projections of the M second blind holes on the second surface is superposed with the middle point of the area defined by the projections of the N first blind holes on the second surface.
With reference to the second aspect, in certain implementations of the second aspect, a depth and a width of the first blind hole are both related to a resonant frequency of the resonator.
With reference to the second aspect, in certain implementations of the second aspect, a depth and a width of the second blind hole are both related to a resonant frequency of the resonator.
With reference to the second aspect, in some implementations of the second aspect, the first blind hole is: circular holes or regular polygonal holes.
With reference to the second aspect, in some implementations of the second aspect, the second blind hole is: circular holes or regular polygonal holes.
In a third aspect, there is provided a dielectric filter comprising a resonator as provided in the first or third aspect above.
In a fourth aspect, there is provided a communication device comprising a resonator as provided in the first or third aspect above or a dielectric filter as provided in the third aspect above.
In a fifth aspect, a chip is provided, where the chip includes a processing module and a communication interface, the processing module is used to control the communication interface to communicate with the outside, and the processing module is further used to implement the method provided in the second aspect.
A sixth aspect provides a computer readable storage medium having stored thereon a computer program which, when executed by an apparatus, causes the apparatus to carry out the method of the second aspect and any possible implementation of the second aspect.
In a seventh aspect, a computer program product is provided, which contains instructions that, when executed by a computer, cause an apparatus to implement the method provided in the second aspect.
Drawings
FIG. 1 shows a perspective view of a metallized blind via.
Fig. 2 shows a side view of a metallized blind via.
Fig. 3 shows a schematic diagram of the variation of the resonance frequency with the depth of the blind hole.
Fig. 4 shows a schematic diagram of an equivalent circuit.
Fig. 5 shows a schematic diagram of capacitance value versus resonant frequency.
Fig. 6 shows a schematic diagram of a resonator provided in accordance with an embodiment of the present application.
Figure 7 shows a perspective view of a resonator suitable for use in an embodiment of the present application.
Figure 8 shows a perspective view of a resonator suitable for use in yet another embodiment of the present application.
FIG. 9 shows a schematic diagram of an equivalent circuit suitable for use in an embodiment of the present application.
Figure 10 shows a top view of a resonator suitable for use in an embodiment of the present application.
FIG. 11 shows a schematic diagram of resonant frequency versus width suitable for use in an embodiment of the present application.
Figure 12 shows a side view of a resonator suitable for use in an embodiment of the present application.
FIG. 13 shows a schematic diagram of resonant frequency versus depth for an embodiment of the present application.
Fig. 14 is a schematic diagram illustrating a method of manufacturing a resonator provided in accordance with an embodiment of the present application.
Detailed Description
The technical solution in the present application will be described below with reference to the accompanying drawings.
The technical scheme of the embodiment of the application can be applied to various communication systems or communication equipment, such as wireless communication equipment comprising a filter. For example, the resonator or the dielectric filter provided in the embodiment of the present application may be applied to a network device or a terminal device in a wireless communication system, such as a network device or a terminal device of a fifth generation (5G) system or a New Radio (NR) system, for example, a base station, and may also be applied to a wireless communication device supporting Massive multiple-input multiple-output (Massive MIMO), and the like.
In the conventional dielectric waveguide filter, the miniaturization is mainly realized by arranging a metallized blind hole (hereinafter referred to as a blind hole) on a dielectric block. The metallized blind hole can be understood as a blind hole with a metal layer covered on the surface or the hole wall, or a blind hole with a metal layer covered on the hole wall. Frequency compression is realized by using the capacitance between the bottom of the blind hole and the lower surface of the dielectric block, and further miniaturization is realized, as shown in fig. 1 and fig. 2. Fig. 1 is a perspective view, and fig. 2 is a side view. h represents the depth of the metallized blind hole, Dh represents the height of the dielectric block, and the size of the resonant frequency can be adjusted by adjusting the depth h of the blind hole. By way of example, fig. 3 shows a diagram of the variation of the resonance frequency with h. As can be seen from fig. 3, the larger the value of the depth h of the blind hole, the lower the resonance frequency. Namely, the closer the depth h of the blind hole is to the height Dh of the dielectric block, the lower the resonant frequency is.
In particular, the amount of the solvent to be used,the principle of tuning the resonant frequency through the metallized blind holes is that each individual metallized blind hole can be seen as a section of uniform transmission line with a capacitor at its end, the equivalent circuit of which is shown in fig. 4. In FIG. 4, j denotes a complex symbol, B denotes a reactance value, and Z0The characteristic impedance is expressed, and θ represents the electrical length, and the existing description can be referred to for the meaning of each parameter, which is not limited. And adjusting the depth h of the blind hole, wherein the capacitance value between the bottom of the blind hole and the bottom of the dielectric block is changed greatly. The deeper the blind hole, the greater the capacitance value. Fig. 5 shows a schematic of capacitance versus resonant frequency. As shown in fig. 5, the phase S (2,1) represents the phase at the forward transmission coefficient, and C represents the capacitance, such as the capacitance C of 0 picofarads (pF), 1pF, 2pF, 3pF, 4 pF. Therefore, by adjusting the depth of the blind hole, the size of the resonant frequency can be adjusted.
However, the depth h of the blind via needs to be increased continuously, and when low frequency is realized, the value of the depth h of the blind via is closer to the height Dh of the dielectric block. During actual production, if the thickness of the bottom of the blind hole is too small, density distribution is unbalanced during molding, the bottom of the blind hole deforms after sintering, and low-frequency implementation is greatly influenced. Therefore, this structure is disadvantageous for realizing a low frequency with a limited height.
In view of this, the present application provides a scheme, which not only can realize miniaturization and reduce resonant frequency, but also can be applicable to more scenes, such as scenes with limited height, and is simple and easy to process, and low in implementation cost.
Various embodiments provided herein will be described in detail below with reference to the accompanying drawings.
Figure 6 shows a schematic diagram of a resonator suitable for use in embodiments of the present application. Fig. 6 is a schematic view for easy understanding, and the specific structure of the actual product is not limited by fig. 6.
As shown in fig. 6, the resonator may include a dielectric block 61.
The dielectric block 61 includes two surfaces, which are oppositely disposed and are respectively referred to as a first surface and a second surface. N first blind holes are formed in the first surface, M second blind holes are formed in the second surface, and N, M are integers which are larger than 1 or equal to 1. The projection of the first blind hole on the side face of the dielectric block is overlapped with the projection of the second blind hole on the side face of the dielectric block.
In one possible design, the first surface is an upper surface and the second surface is a lower surface. As shown in fig. 6, the first surface may be an upper surface 611 and the second surface may be a lower surface 612.
For example, as shown in fig. 6, 4 blind holes 1 (i.e., first blind holes) are provided on the first surface 611, that is, the opening direction of the 4 blind holes 1 is from top to bottom of the medium. The second surface 612 is provided with 4 blind holes 2 (i.e. second blind holes), i.e. the opening directions of the 4 blind holes 2 are from bottom to top of the medium. For the sake of uniformity, blind hole 1 is hereinafter referred to as the first blind hole, and blind hole 2 is hereinafter referred to as the second blind hole.
The number of blind holes on the first surface and the second surface can be equal or different, that is, N and M can be equal or different.
In one possible case, N ═ 2n、M=2mN and m are integers greater than 1 or equal to 1. For example, N and M are both 1, i.e., N ═ M ═ 2; for another example, N and M are both 2, i.e., N ═ M ═ 4; for another example, N and M are both 3, i.e., N ═ M ═ 8. N and m may be equal to or different from each other, and are applicable to the embodiments of the present application. n is m. It should be understood that the value of N to the power of 2 is merely illustrative and not limiting, and for example, N may be a multiple of 2. The value of M to the power of 2 is also an exemplary illustration, and is not limited thereto, and for example, M may be a multiple of 2.
The projection of the first blind hole on the side face of the dielectric block is overlapped with the projection of the second blind hole on the side face of the dielectric block, namely the blind holes 1 and the blind holes 2 are staggered in the depth direction. For example, as shown in fig. 6, each blind hole 1 on the first surface 611 overlaps with each blind hole 2 on the second surface 612 in projection on the side of the dielectric block, or is staggered in the depth direction.
For ease of understanding, the perspective views shown in fig. 7 and 8 are used for illustrative purposes.
For example, as shown in FIG. 7, assume N, M are all 2. The 2 blind holes 1 on the first surface 611 are grouped together, for example, as group 1(group 1), and the 2 blind holes 2 on the second surface 612 are grouped together, for example, as group 2(group 2). As can be seen from FIG. 7, the opening direction of the 2 blind holes in the group 1 is from top to bottom of the medium, and the opening direction of the 2 blind holes in the group 2 is from bottom to top of the medium.
As another example, assume N, M are both 4, as shown in FIG. 8. The 4 blind holes 1 on the first surface 611 are grouped together, for example, as group 1(group 1), and the 4 blind holes 2 on the second surface 612 are grouped together, for example, as group 2(group 2). As can be seen from FIG. 8, the opening direction of the 4 blind holes in the group 1 is from top to bottom of the medium, and the opening direction of the 4 blind holes in the group 2 is from bottom to top of the medium.
The resonator can further comprise a metal layer, and the metal layer covers the outer surface of the dielectric block, the hole wall of the first blind hole and the hole wall of the second blind hole. Taking fig. 6 as an example, the metal layer may cover the hole wall (or surface) of the dielectric block 61, the hole wall (or surface) of the blind via 1, and the hole wall (or surface) of the blind via 2.
It is to be understood that the material for the metal plating layer is not strictly limited. For example, the metal layer may be silver plating or copper plating, or the like. For example, the surfaces of the dielectric blocks may be coated with a metal layer by silver spraying, vacuum silver plating, electro-silver plating, water silver plating, or the like.
The example is illustrated in fig. 7. For the purpose of differentiation, 2 blind holes 1 in group 1 are respectively designated as blind holes 11 and 12, and 2 blind holes 2 in group 2 are respectively designated as blind holes 21 and 22. Taking the blind hole 11 and the blind hole 21 as an example, in the example shown in fig. 7, the blind hole 11 and the blind hole 21 have an overlap in projection on the side surface of the dielectric block. When the metal layer covers the walls (or surfaces) of the blind holes 11 and 21, the metal layer covers the walls of the blind holes 11 and 21, so that a capacitor exists between the blind holes 11 and 21.
In the embodiment of the application, the metal layers cover the surfaces of the dielectric block, the first blind hole and the second blind hole, and the blind holes on the two surfaces are staggered in depth positions, so that capacitors exist between the blind holes and the dielectric block. By increasing the capacitance (e.g., capacitance exists between blind holes, and capacitance also exists between a blind hole and a dielectric block), frequency compression can be better achieved, and as shown in fig. 5, when the capacitance value is larger, a lower resonance frequency can be achieved. In addition, by frequency compression, miniaturization of the resonator can also be achieved. The size of the resonator is wavelength dependent, for example the size of the resonator is a quarter wavelength. The lower the frequency, the larger the wavelength, the larger the size of the resonator required. Through having increased also to have electric capacity between blind hole for its compression effect to the frequency is more obvious, consequently, can realize using miniaturized resonator to realize lower frequency. Taking the design shown in fig. 7 as an example, fig. 9 shows an equivalent circuit diagram.
The N first blind holes and the M second blind holes are designed on one resonator. Generally, in the prior art, a blind hole is designed on a resonator. In the embodiment of the application, a plurality of blind holes are formed in one resonator, so that capacitance exists between the blind holes. The capacitance is increased and a lower resonance frequency can be achieved. In addition, in a resonator (especially a miniaturized resonator), the distance between the blind hole and the blind hole is very close, and the capacitance of the blind hole and the blind hole is larger according to the inverse proportion of the distance and the capacitance, so that the lower resonant frequency can be realized by using the miniaturized resonator.
Optionally, the middle point of the area surrounded by the projections of the N blind holes 1 on the first surface coincides with the middle point of the area surrounded by the projections of the M blind holes 2 on the first surface; the middle point of the area enclosed by the projections of the M blind holes 2 on the second surface is superposed with the middle point of the area enclosed by the projections of the N blind holes 1 on the second surface.
For example, taking fig. 7 as an example, assuming that the projection of 2 blind holes 1 on the first surface is a midpoint 1 and a midpoint 2, respectively, the midpoint of the area enclosed by the projection of 2 blind holes 1 on the first surface, i.e. the midpoint representing the line connecting the midpoint 1 and the midpoint 2. Suppose N is 2, M is 2, the midpoints of the regions surrounded by the projections of the 2 blind holes 1 on the first surface coincide with the midpoints of the regions surrounded by the projections of the 2 blind holes 2 on the first surface, that is, the midpoint of the connection line between the midpoint of the projection of one blind hole 1 on the first surface and the midpoint of the connection line between the midpoint of the projection of the other blind hole 1 on the first surface coincides with the midpoint of the projection of the other blind hole 2 on the first surface.
For another example, taking fig. 8 as an example, assuming that the projection of the 4 blind holes 1 on the first surface is a midpoint 1, a midpoint 2, a midpoint 3, and a midpoint 4, respectively, then the midpoint of the area enclosed by the projection of the 4 blind holes 1 on the first surface, i.e. the midpoint or the central position of the quadrangle formed by connecting the midpoints 1, 2, 3, and 4, is represented. Assuming that N is 4, M is 4, and the middle point of the area surrounded by the projection of the 4 blind holes 1 on the first surface coincides with the middle point of the area surrounded by the projection of the 4 blind holes 2 on the first surface, that is, the center position of a quadrangle formed by connecting the 4 middle points of the projection of the 4 blind holes 1 on the first surface coincides with the center position of a quadrangle formed by connecting the 4 middle points of the projection of the 4 blind holes 2 on the first surface.
In one possible design, the N blind holes 1 and the M blind holes 2 may be placed in an interdigital (interdigital) manner. Accordingly, the resonator provided by the embodiment of the application can be an interdigital resonator.
For example, as shown in fig. 7, the group 1 and the group 2 are placed in an interdigital manner, that is, 2 blind holes 1 in the group 1 and 2 blind holes 2 in the group 2 are placed in an interdigital manner. For another example, as shown in fig. 8, the group 1 and the group 2 are placed in an interdigital manner, that is, the 4 blind holes 1 in the group 1 and the 4 blind holes 2 in the group 2 are placed in an interdigital manner.
In this application embodiment, through making blind hole on first surface and the second surface be the interdigital and place, can increase the dead area between the blind hole on first surface and the blind hole on the second surface, and then can increase the electric capacity between the blind hole on first surface and the blind hole on the second surface, through increasing electric capacity, can realize lower resonant frequency, and then also can make the miniaturization of syntonizer more outstanding.
Fig. 7 and 8 illustrate the blind hole as a circular hole (i.e., the cross section of the blind hole is circular), but the shape of the blind hole is not limited thereto. For example, the shape of the blind hole may be: circular or regular polygonal or elliptical or rectangular holes, etc.
Alternatively, the blind holes can be connected through blind grooves.
In one possible design, blind slots are provided between blind holes of the same group. For example, blind grooves 1 are formed between the N blind holes 1, that is, the blind grooves 1 exist between the N blind holes 1, and the blind grooves 1 can connect the N blind holes 1. For another example, blind grooves 2 are designed between the M blind holes 2, that is, the blind grooves 2 exist between the M blind holes 2, and the blind grooves 2 can connect the M blind holes 2.
In a possible mode, a blind groove is arranged between every two blind holes, and each blind hole is provided with one blind groove.
For example, as shown in fig. 7, a blind slot, for example, marked as slot1, exists between 2 blind holes in group 1; there is a blind slot, for example, slot2, between the 2 blind holes in set 2. Wherein the slot1 may be located between the 2 blind holes 2 of the group 2, i.e. the projection of the slot1 on the upper surface is located between the projections of the 2 blind holes 2 of the group 2 on the upper surface. The slot2 may be located between the 2 blind holes 1 of group 1, i.e. the projection of slot2 on the lower surface is located between the projections of the 2 blind holes 1 of group 1 on the lower surface.
For another example, as shown in fig. 8, 2 slots 1 exist between 4 blind holes in group 1, and 1 slot1 exists between every two blind holes; there are 2 slots 2 in total between 4 blind holes in group 2, and there are 1 slot2 between every two blind holes. Wherein 2 slots 1 may be located between 4 blind holes 2 of group 2, i.e. the projection of 2 slots 1 on the upper surface is located between the projections of 4 blind holes 2 of group 2 on the upper surface. The 2 slots 2 may be located between the 4 blind holes 1 of group 1, i.e. the projection of the 2 slots 2 on the lower surface is located between the projections of the 4 blind holes 1 of group 1 on the lower surface.
Alternatively, frequency compression may be achieved by adjusting the width (width) and/or depth (e.g., noted as H-slot) of the blind slot.
Example 1, taking the design shown in fig. 7 as an example, fig. 10 shows a top view of the design, with the width of the blind slot as shown in fig. 10. Through the width of adjusting this blind groove, can change the electric capacity between the blind hole, can change the electric capacity between group 1 and group 2, and then can change resonant frequency size. For example, when two blind holes 1 of the group 1 are connected through a blind slot1, capacitance may exist between the blind slot1 and the blind hole 2 of the group 2. The capacitance value is related to the distance, so when the width of the blind slot1 is adjusted, the distance between the blind slot1 and the blind hole 2 of the group 2 can be changed, and the capacitance between the group 1 and the group 2 can be changed.
The width of the blind slot is assumed to be 0.5 mm-1.5 mm. The width of the blind slot is scanned from 0.5mm to 1.5mm, namely, the position (namely the size of the resonance frequency) where resonance occurs is observed when the width of the blind slot is different. As the width increases, the capacitance between group 1 and group 2 will increase. FIG. 11 shows a schematic of the resonant frequency versus width. As can be seen from fig. 11, as the width of the blind slot increases, the resonant frequency becomes smaller.
It should be understood that the width of each blind slot may be the same or different, and is not strictly limited. For example, the width of each blind groove is designed to be the same, so that the processing is simple and easy to realize, and the cost is low. For another example, by designing different widths of the blind grooves, the widths of the blind grooves can be flexibly designed according to actual needs, and the flexibility is high.
Example 2, taking the design shown in fig. 7 as an example, fig. 12 shows a side view of the design, with the depth of the blind groove as shown in fig. 12. Through the degree of depth of adjusting this blind groove, can change the electric capacity between the blind hole, can change the electric capacity between group 1 and group 2, and then can change resonant frequency size. The depth of the blind groove is assumed to be 1 mm-2 mm. And (3) scanning the depth of the blind groove from 1mm to 2mm, namely observing the position (namely the size of the resonance frequency) where the resonance occurs when the blind groove depths are different. As the depth increases, the capacitance between group 1 and group 2 will increase. FIG. 13 is a graph showing the relationship between resonant frequency and depth. As can be seen from fig. 13, the resonant frequency becomes smaller as the blind slot depth increases.
It should be understood that the depth of each blind groove may be the same or different, and is not limited thereto. For example, the depth of each blind groove is designed to be the same, so that the processing is simple and easy to realize, and the cost is low. For another example, by designing different depths of the blind grooves, the depths of the blind grooves can be flexibly designed according to actual needs, and the flexibility is high.
The above description mainly takes fig. 7 as an example, and in combination with the two examples, the magnitude of the resonant frequency can be adjusted by adjusting the depth or the width of the blind slot. It should be understood that the depth of the blind groove or the width of the blind groove may be adjusted separately, or both the depth and the width of the blind groove may be adjusted, which is not limited thereto.
It should be understood that the number of blind slots is not strictly limited in the embodiments of the present application. For example, a plurality of blind slots can be designed on each blind hole, so that more flexible tuning can be realized.
In the embodiment of the application, the blind holes are arranged in the same way as blind grooves arranged among the blind holes, so that the dead-against area of the blind holes can be increased, the capacitance between the side walls is obvious, the compression effect on the frequency is obvious, and the miniaturization is more prominent.
Optionally, in the embodiment of the present application, the resonant frequency may also be adjusted by adjusting the number, position, size, or the like of the blind holes.
By adjusting the number, position, or size of the blind holes, etc., the capacitance can be changed, which in turn also affects the resonant frequency.
As an example, the distance between blind holes may be adjusted. For example, the distance between the individual blind holes 1 can be adjusted. As another example, the distance between the blind holes 2 can be adjusted; as another example, the distance between the blind hole 1 and the blind hole 2 can be adjusted. As another example, the size of blind hole 1 and/or blind hole 2, such as the depth or diameter of the hole, may be adjusted.
As yet another example, the distance between the bottom of the blind via and the media may be adjusted. For example, the distance between the bottom of the blind hole 1 and the second surface can be adjusted; as another example, the distance between the bottom of the blind hole 2 and the first surface can be adjusted.
While the embodiments of the resonator (or the resonant structure) applied to the present application are described above with reference to fig. 6 to 13, the structures shown in fig. 6 to 13 are merely exemplary, and in an actual product, the modified structures belonging to the above structures fall within the scope of the embodiments of the present application.
It should be understood that, as for the way of opening the blind holes in the dielectric block, reference can be made to the existing way, and this is not limited thereto.
It should also be understood that the material of the dielectric block is not limiting. For example, the dielectric block may be made of a ceramic material or a plastic material.
The apparatus embodiments of the present application are described in detail above with reference to fig. 6-13, and the method embodiments of the present application are described in detail below with reference to fig. 14. The description of the method side and the description of the apparatus side correspond to each other, and the overlapping description is appropriately omitted for the sake of brevity.
Fig. 14 shows a schematic diagram of a method 1400 for manufacturing a resonator provided according to an embodiment of the application. The resonator includes a dielectric block and a metal layer, the dielectric block includes a first surface and a second surface disposed opposite to each other, and the manufacturing method 1400 may include the following steps.
1410, arranging N first blind holes on the first surface, wherein N is an integer greater than 1 or equal to 1;
1420, arranging M second blind holes on the second surface, wherein M is an integer greater than or equal to 1, and the projection of the first blind hole on the side surface of the dielectric block is overlapped with the projection of the second blind hole on the side surface of the dielectric block;
1430, the metal layer covers the outer wall of the dielectric block, the hole wall of the first blind hole and the hole wall of the second blind hole.
N first blind holes and M second blind holes are arranged on one resonator.
The resonator manufactured by the embodiment of the application is provided with a plurality of blind holes in the dielectric block, the holes are respectively formed in two oppositely arranged surfaces, and the blind holes in the two surfaces are staggered in depth position. After the surface of the dielectric block, the inner walls of the first blind hole and the second blind hole are covered with the metal layers, the metalized blind holes can have capacitors between the side walls except for the capacitors at the bottoms of the holes, and the capacitors between the blind holes are increased. By increasing the capacitance, a better frequency compression can be achieved, i.e. the capacitance is increased and a lower resonance frequency can be achieved. In addition, by frequency compression, miniaturization of the resonator can also be achieved.
In one possible design, N has a value of 2nAnd/or M has a value of 2mAnd the values of n and m are integers which are more than 1 or equal to 1.
In yet another possible design, N, M are each integers greater than 1; the manufacturing method further includes: the two first blind holes are connected using a first blind groove and/or the two second blind holes are connected using a second blind groove.
In another possible design, every two first blind holes are connected by one first blind groove, and every first blind groove connects two first blind holes.
In yet another possible design, M is greater than 1, and the projection of the first blind recess on the first surface is located between the projections of the M second blind recesses on the first surface.
In another possible design, every two second blind holes are connected by one second blind groove, and every second blind groove connects two second blind holes.
In yet another possible design, N is greater than 1, and the projection of the second blind recess on the second surface is located between the projections of the N first blind recesses on the second surface.
In another possible design, the middle point of the area enclosed by the projections of the N first blind holes on the first surface coincides with the middle point of the area enclosed by the projections of the M second blind holes on the first surface; the middle point of the area defined by the projections of the M second blind holes on the second surface is superposed with the middle point of the area defined by the projections of the N first blind holes on the second surface.
In yet another possible design, the depth and width of the first blind hole are both related to the resonance frequency of the resonator.
In yet another possible design, the depth and width of the second blind hole are both related to the resonance frequency of the resonator.
In yet another possible design, the first blind hole is: circular holes or regular polygonal holes.
In another possible design, the second blind hole is: circular holes or regular polygonal holes.
Embodiments of the present application also provide a computer-readable storage medium on which computer instructions for implementing the method in the above method embodiments are stored.
For example, the computer program, when executed by a computer, causes the computer to implement the methods in the above-described method embodiments.
Embodiments of the present application also provide a computer program product containing instructions, which when executed by a computer, cause the computer to implement the method in the above method embodiments.
Embodiments of the present application also provide a dielectric filter, which includes the resonator in the above embodiments.
An embodiment of the present application further provides a communication device, which includes the resonator in the above embodiment.
It should be understood that the communication device may be a network device, such as any device having wireless transceiving capability. Such devices include, but are not limited to: evolved Node B (eNB), Radio Network Controller (RNC), Node B (Node B, NB), Base Station Controller (BSC), Base Transceiver Station (BTS), Home Base Station (e.g., Home evolved NodeB, or Home Node B, HNB), BaseBand Unit (Base band Unit, BBU), Access Point (AP) in Wireless Fidelity (WIFI) system, etc., and may also be 5G, such as NR, gbb in system, or TRP, transmission Point (TRP or TP), one or a group of antennas (including multiple antennas, NB, or a transmission panel) of a Base Station in 5G system, such as a baseband unit (BBU), or a Distributed Unit (DU), etc.
The communication device may also be a terminal device. A terminal device can also be called a User Equipment (UE), an access terminal, a subscriber unit, a subscriber station, mobile, remote station, remote terminal, mobile device, user terminal, wireless communication device, user agent, or user equipment. The terminal device in the embodiment of the present application may be a mobile phone (mobile phone), a tablet computer (Pad), a computer with a wireless transceiving function, a Virtual Reality (VR) terminal device, an Augmented Reality (AR) terminal device, a wireless terminal in industrial control (industrial control), a wireless terminal in self-driving (self-driving), a wireless terminal in remote medical (remote medical), a wireless terminal in smart grid (smart grid), a wireless terminal in transportation safety (transportation safety), a wireless terminal in smart city (smart city), a wireless terminal in smart home (smart home), and the like. The embodiments of the present application do not limit the application scenarios.
It is clear to those skilled in the art that for convenience and brevity of description, any of the explanations and advantages provided above for relevant contents of any of the communication apparatuses may refer to the corresponding method embodiments provided above, and no further description is provided herein.
In an embodiment of the present application, a communication device may include a hardware layer, an operating system layer running above the hardware layer, and an application layer running above the operating system layer. The hardware layer may include hardware such as a Central Processing Unit (CPU), a Memory Management Unit (MMU), and a memory (also referred to as a main memory). The operating system of the operating system layer may be any one or more computer operating systems that implement business processing through processes (processes), such as a Linux operating system, a Unix operating system, an Android operating system, an iOS operating system, or a windows operating system. The application layer may include applications such as a browser, an address book, word processing software, and instant messaging software.
The embodiment of the present application does not particularly limit a specific structure of an execution subject of the method provided by the embodiment of the present application, as long as communication can be performed by the method provided by the embodiment of the present application by running a program in which codes of the method provided by the embodiment of the present application are recorded. For example, an execution main body of the method provided by the embodiment of the present application may be a communication device, or a functional module capable of calling a program and executing the program in the communication device, or a human.
Various aspects or features of the disclosure may be implemented as a method, apparatus, or article of manufacture using standard programming and/or engineering techniques. The term "article of manufacture" as used herein is intended to encompass a computer program accessible from any computer-readable device, carrier, or media.
The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device including one or more available media integrated servers, data centers, and the like. Available media (or computer-readable media) may include, for example but not limited to: magnetic or magnetic storage devices (e.g., floppy disks, hard disks (e.g., removable hard disks), magnetic tapes), optical media (e.g., compact disks, CD's, Digital Versatile Disks (DVD), etc.), smart cards, and flash memory devices (e.g., erasable programmable read-only memories (EPROM), cards, sticks, or key drives, etc.), or semiconductor media (e.g., Solid State Disks (SSD), usb disks, read-only memories (ROMs), Random Access Memories (RAMs), etc.) that may store program code.
Various storage media described herein can represent one or more devices and/or other machine-readable media for storing information. The term "machine-readable medium" can include, but is not limited to: wireless channels and various other media capable of storing, containing, and/or carrying instruction(s) and/or data.
It will also be appreciated that the memory referred to in the embodiments of the application may be either volatile memory or nonvolatile memory, or may include both volatile and nonvolatile memory. The non-volatile memory may be a read-only memory (ROM), a Programmable ROM (PROM), an Erasable PROM (EPROM), an electrically Erasable EPROM (EEPROM), or a flash memory. Volatile memory can be Random Access Memory (RAM). For example, RAM can be used as external cache memory. By way of example and not limitation, RAM may include the following forms: static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SDRAM), double data rate synchronous dynamic random access memory (DDR SDRAM), enhanced synchronous SDRAM (ESDRAM), Synchronous Link DRAM (SLDRAM), and direct bus RAM (DR RAM).
It should also be noted that the memory described herein is intended to comprise, without being limited to, these and any other suitable types of memory.
In the above embodiments, the implementation may be wholly or partially realized by software, hardware, firmware, or any combination thereof.
When implemented in software, may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. The procedures or functions described in accordance with the embodiments of the present application are all or partially generated upon loading and execution of computer program instructions on a computer. The computer may be a general purpose computer, a special purpose computer, a network of computers, or other programmable device. For example, the computer may be a personal computer, a server, or a network appliance, among others. The computer instructions may be stored in a computer readable storage medium or transmitted from one computer readable storage medium to another, for example, the computer instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center by wire (e.g., coaxial cable, fiber optic, Digital Subscriber Line (DSL)) or wirelessly (e.g., infrared, wireless, microwave, etc.). With regard to the computer-readable storage medium, reference may be made to the above description.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims and the specification.

Claims (11)

1. A resonator, comprising:
a dielectric block, the dielectric block comprises a first surface and a second surface which are oppositely arranged, the first surface is provided with N first blind holes, the second surface is provided with M second blind holes, N, M are integers which are more than 1 or equal to 1,
the projection of the first blind hole on the side face of the dielectric block is overlapped with the projection of the second blind hole on the side face of the dielectric block;
and the metal layer covers the outer wall of the dielectric block, the hole wall of the first blind hole and the hole wall of the second blind hole.
2. The resonator of claim 1,
the value of N is 2nAnd/or M has a value of 2m
And the values of n and m are integers which are more than 1 or equal to 1.
3. The resonator according to claim 1 or 2, characterized in that N, M are each integers greater than 1;
every two first blind holes are connected through a first blind groove, and/or every two second blind holes are connected through a second blind groove.
4. The resonator of claim 3,
every two be connected through first blind groove between the first blind hole, include:
every two first blind holes are connected through one first blind groove, and every first blind groove is connected with two first blind holes.
5. The resonator of claim 4, wherein M is greater than 1, and projections of the first blind slot on the first surface are located between projections of the M second blind holes on the first surface.
6. The resonator according to any of claims 3-5,
every two be connected through the second blind groove between the second blind hole, include:
every two second blind holes are connected through one second blind groove, and each second blind groove is connected with two second blind holes.
7. The resonator according to claim 6, wherein N is greater than 1, and projections of the second blind recesses on the second surface are located between projections of the N first blind recesses on the second surface.
8. The resonator according to any of claims 1 to 7,
the middle point of the area defined by the projections of the N first blind holes on the first surface coincides with the middle point of the area defined by the projections of the M second blind holes on the first surface, and the middle point of the area defined by the projections of the M second blind holes on the second surface coincides with the middle point of the area defined by the projections of the N first blind holes on the second surface.
9. The resonator according to any of claims 1-8, characterized in that said N first blind holes and said M second blind holes are provided on one of said resonators.
10. A dielectric filter comprising a resonator as claimed in any one of claims 1 to 9.
11. A communication device, characterized in that it comprises a dielectric filter according to claim 10.
CN202011379343.5A 2020-11-30 2020-11-30 Resonator, dielectric filter, and communication device Active CN114583430B (en)

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CN111244590A (en) * 2019-12-31 2020-06-05 江苏灿勤科技股份有限公司 Dielectric filter and radio transmitting/receiving apparatus
CN111403872A (en) * 2019-12-31 2020-07-10 江苏灿勤科技股份有限公司 Dielectric filter and radio transceiver apparatus including the same
CN111834715A (en) * 2020-06-23 2020-10-27 大富科技(安徽)股份有限公司 Dielectric filter coupling structure, dielectric filter and communication base station

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100244984A1 (en) * 2009-03-30 2010-09-30 Tdk Corporation Resonator and filter
CN110400992A (en) * 2018-04-24 2019-11-01 上海华为技术有限公司 A kind of dielectric filter and communication equipment
CN111244590A (en) * 2019-12-31 2020-06-05 江苏灿勤科技股份有限公司 Dielectric filter and radio transmitting/receiving apparatus
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