CN114576997A - Laser heating system for silicon dioxide - Google Patents
Laser heating system for silicon dioxide Download PDFInfo
- Publication number
- CN114576997A CN114576997A CN202210204936.0A CN202210204936A CN114576997A CN 114576997 A CN114576997 A CN 114576997A CN 202210204936 A CN202210204936 A CN 202210204936A CN 114576997 A CN114576997 A CN 114576997A
- Authority
- CN
- China
- Prior art keywords
- laser
- silicon dioxide
- computer
- heating
- controller
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 101
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 49
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 40
- 238000004093 laser heating Methods 0.000 title claims abstract description 19
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 13
- 239000010431 corundum Substances 0.000 claims abstract description 13
- 230000003321 amplification Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 23
- 238000002844 melting Methods 0.000 abstract description 11
- 230000008018 melting Effects 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 6
- 230000008859 change Effects 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/06—Crucible or pot furnaces heated electrically, e.g. induction crucible furnaces with or without any other source of heat
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/08—Details peculiar to crucible or pot furnaces
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/08—Details peculiar to crucible or pot furnaces
- F27B14/14—Arrangements of heating devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/08—Details peculiar to crucible or pot furnaces
- F27B14/20—Arrangement of controlling, monitoring, alarm or like devices
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention relates to a laser heating system for silicon dioxide. The system comprises a pulse laser, a reflector, a lens, a corundum crucible, a temperature measuring device, an image acquisition device, a controller and a computer. The method comprises the steps of putting silicon dioxide into a corundum crucible, heating by adopting pulse laser, measuring temperature change during heating by a temperature measuring device, shooting the melting state of the silicon dioxide in real time by an image acquisition device, transmitting the melting state of the silicon dioxide to a computer for image processing, and stopping laser heating when the required heating state is achieved or the melting state of the silicon dioxide does not change any more when a control module receives a feedback signal. Because the melting point of the silicon dioxide is higher, the required heating furnace is expensive, the invention adopts a laser heating mode to realize non-contact heating, improves the heating efficiency and can analyze the heating state of the silicon dioxide in real time.
Description
Technical Field
The invention relates to the technical field of laser heating, in particular to a laser heating system for silicon dioxide.
Background
In general, a non-metallic material has a low reflectivity to laser light and exhibits a high absorption rate. Non-metallic materials have little thermal conductivity and do not rely on free electron heating. When laser with long wavelength is irradiated, the laser energy can be directly absorbed by material crystal lattice to strengthen thermal oscillation; when short wavelength laser is irradiated, the photon energy of the laser is high, electrons on the atomic shell layer are excited and spread to the crystal lattice through collision, and the laser energy is converted into heat energy to be absorbed.
The silicon dioxide has stable physical and chemical characteristics, is a good non-metallic material, is used as a main component of the high-silicon iron tailings, researches the melting rule of the silicon dioxide, has theoretical value and is beneficial to realizing the secondary utilization of resources. The melting point of the silicon dioxide is 1723 ℃, a high-temperature electric furnace with the temperature of over 1700 ℃ is required to be used for heating the silicon dioxide to a molten state, and the high-temperature electric furnace mainly has two problems, namely high heating temperature, long heating time of the high-temperature electric furnace, low conversion efficiency and expensive equipment due to the fact that a large amount of heat loss is generated in the power-on process. Secondly, the temperature inside the high-temperature electric furnace is not uniformly distributed during heating, so that whether the temperature of the silicon dioxide reaches the melting point of the silicon dioxide or not is difficult to accurately judge in real time, and whether the silicon dioxide is in a molten state or not cannot be determined.
Disclosure of Invention
In order to overcome the defects of the existing silicon dioxide heating device, the invention provides a laser heating system for silicon dioxide, which adopts laser to heat, gets rid of the limitation of a high-temperature electric furnace, has concentrated laser energy, can realize uniform and rapid heating of the silicon dioxide, obtains the heating temperature and the melting process of the silicon dioxide in real time through a temperature measuring device and an image acquisition device, and finally uses a computer to process data, and can accurately control the heating process of the silicon dioxide and judge whether the silicon dioxide is in the melting state.
Therefore, the invention adopts the following technical scheme:
a laser heating system for silicon dioxide comprises a pulse laser, a reflector, a lens, a corundum crucible, a temperature measuring device, an image acquisition device and a computer. The pulse laser is placed in the horizontal direction, the pulse laser is connected with the controller, the controller is connected with the computer through a signal line, the state of the pulse laser is transmitted to the computer, the computer sends a signal to adjust the pulse laser through the controller, the reflector and the laser are in the same horizontal direction and used for changing the laser incidence angle, the lens is located under the reflector and used for obtaining a high-power-density light spot, the corundum crucible is used for containing silicon dioxide to be heated and is placed at the focus of the lens, the temperature measuring device is used for obtaining and feeding back the temperature during laser heating and is the same as the laser and connected with the computer through the controller, the image obtaining device is connected with the computer, and the obtained image is processed and analyzed in real time through the computer.
Preferably: the pulse laser adopts CO with adjustable laser power and spot size2A gas laser.
Preferably, the following components: the controller has two functions, namely, the controller can control the on and off of the pulse laser and the output power and the spot size of the laser. Secondly, the temperature data measured by the temperature measuring device and the current setting data of the laser can be fed back to the computer.
Preferably, the following components: the depth of the corundum crucible is beneficial to obtaining the temperature and the image of the silicon dioxide.
Preferably: the temperature measuring device is an infrared temperature sensor, and can realize non-contact measurement of temperature.
Preferably, the following components: the image acquisition device is a CCD (charge coupled device) video shooting system with an amplification effect.
The invention has the beneficial effects that:
the laser is adopted to directly heat the silicon dioxide, and compared with an electric-thermal heating mode of a high-temperature electric furnace, the energy conversion efficiency of the system is improved. Due to the characteristics of good directivity and concentrated energy distribution of the laser, the silicon dioxide can be rapidly and uniformly heated. And an infrared temperature sensor is adopted to realize non-contact measurement of the heating temperature. The data of the laser heating silica is comprehensively analyzed by adopting a computer, the setting of a laser is optimized according to the analysis result, the melting state of the silica is more accurately judged by processing the collected image of the silica, and the heating parameters can be accurately adjusted in real time.
Drawings
Fig. 1 is a schematic view of a laser heating technical scheme for silicon dioxide provided by the invention.
In the figure, 1 pulse laser, 2 reflector, 3 lens, 4 corundum crucible, 5 silicon dioxide, 6 supporting platform, 7 infrared temperature measuring device, 8 image acquisition device, 9 controller, 10 computer
Detailed Description
The following detailed description of the present invention will be described in conjunction with the accompanying drawings and detailed description, which are provided to illustrate the present invention and not to limit the scope of the present invention.
The invention provides a laser heating system for silicon dioxide, which adopts the specific technical scheme as shown in figure 1: the device comprises a pulse laser (1), a reflector (2), a lens (3), a corundum crucible (4), silicon dioxide (5), a supporting platform (6), an infrared temperature measuring device (7), an image acquisition device (8), a controller (9) and a computer (10). The controller (9) is connected with the pulse laser (1) and the infrared temperature measuring device (7), and the controller (9) and the image acquisition device (8) are connected to a computer through signal lines; the pulse laser (1) and the reflector (2) are positioned in the same horizontal direction, and the reflector (2) can adjust the angle as required to change the position of an incident laser spot; the lens (3) is positioned below the reflector (2), and a high-power-density light spot is formed at the focal point position of the lens (3); the silicon dioxide (5) is placed in the corundum crucible (4), the corundum crucible (4) is placed on the supporting platform (6), and when the corundum crucible is heated, the silicon dioxide (5) is positioned at the focal point of the lens.
The pulse laser (1) uses CO2A gas laser for generating a fixed wavelength light having a wavelength of 10.6 microns.
The initial state of the reflector (2) forms 45 degrees with the horizontal direction.
The lens (3) is a plano-convex lens made of BK7 glass.
The image acquisition device (8) is a CCD video shooting system with an amplification effect.
The implementation process comprises the following steps: as shown in fig. 1: the pulse laser (1) generates pulse laser with a fixed wavelength, light spots are converged on the surface of silica (5) in a corundum crucible (4) after the pulse laser passes through a reflector (2) and a lens (3), the silica (5) absorbs heat energy of the laser, the temperature continuously rises, in the process, an infrared temperature measuring device (7) measures the temperature of the silica (5) in real time and transmits the temperature to a computer (10), when the temperature rises to about 1700 ℃, the computer (10) processes images acquired by a CCD (charge coupled device), the heating and melting states of the silica are detected, when the required state or complete melting is achieved, the state of the silica is not changed any more, the computer (10) sends a signal, and the controller (9) controls the pulse laser (1) to change parameters or close the laser. In the heating process, the laser output power, the spot size and other heating parameters can be controlled by a computer at any time so as to meet the required heating requirement.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. A laser heating system for silicon dioxide, characterized by: the device comprises a pulse laser, a reflector, a lens, a corundum crucible, a temperature measuring device, an image acquisition device and a computer. The pulse laser is placed in the horizontal direction, the pulse laser is connected with the controller, the controller is connected with the computer through a signal line, state parameters of the pulse laser are transmitted to the computer, the computer sends signals to adjust the pulse laser through the controller, the reflector and the laser are located in the same horizontal direction, the lens is located under the reflector, the corundum crucible is used for containing silica required to be heated and is placed at the focus of the lens, the temperature measuring device is used for obtaining and feeding back the temperature when the laser is heated and is connected with the computer through the controller as the laser, the image obtaining device is connected with the computer, and the obtained image is processed and analyzed in real time through the computer.
2. A laser heating system for silicon dioxide as claimed in claim 1, wherein: the pulse laser is laser powerCO with adjustable rate and spot size2A gas laser.
3. A laser heating system for silicon dioxide as claimed in claim 1, wherein: the controller has two functions, namely, the controller can control the on and off of the pulse laser and the output power and the spot size of the laser. Secondly, the temperature data measured by the temperature measuring device and the current setting data of the laser can be transmitted to the computer.
4. A laser heating system for silicon dioxide as claimed in claim 1, wherein: the temperature measuring device is an infrared temperature sensor, and can realize non-contact measurement of temperature.
5. A laser heating system for silicon dioxide as claimed in claim 1, wherein: the image acquisition device is a CCD (charge coupled device) video shooting system with an amplification effect.
6. A laser heating system for silicon dioxide as claimed in claim 2, wherein: CO 22The fixed wavelength of the gas laser is 10.6 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210204936.0A CN114576997A (en) | 2022-03-02 | 2022-03-02 | Laser heating system for silicon dioxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210204936.0A CN114576997A (en) | 2022-03-02 | 2022-03-02 | Laser heating system for silicon dioxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114576997A true CN114576997A (en) | 2022-06-03 |
Family
ID=81771631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210204936.0A Pending CN114576997A (en) | 2022-03-02 | 2022-03-02 | Laser heating system for silicon dioxide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114576997A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060131289A1 (en) * | 2004-10-13 | 2006-06-22 | Masayuki Jyumonji | Processing method, processing apparatus, crystallization method and crystallization apparatus using pulsed laser beam |
| US20130068384A1 (en) * | 2011-09-21 | 2013-03-21 | Polaronyx, Inc. | Method and Apparatus for Three Dimensional Large Area Welding and Sealing of Optically Transparent Materials |
| CN104999178A (en) * | 2015-08-15 | 2015-10-28 | 岳睿 | Laser welding device carrying multiple sensors |
| CN204934867U (en) * | 2015-08-15 | 2016-01-06 | 岳睿 | The laser weld monitoring system of multisensor |
| CN207512214U (en) * | 2017-11-08 | 2018-06-19 | 深圳市赢合科技股份有限公司 | A kind of laser heating system |
| CN109188609A (en) * | 2018-09-27 | 2019-01-11 | 江苏大学 | A kind of end caps welding system and welding process |
| CN109352182A (en) * | 2018-11-13 | 2019-02-19 | 中国科学院上海硅酸盐研究所 | Array sample laser heating system |
-
2022
- 2022-03-02 CN CN202210204936.0A patent/CN114576997A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060131289A1 (en) * | 2004-10-13 | 2006-06-22 | Masayuki Jyumonji | Processing method, processing apparatus, crystallization method and crystallization apparatus using pulsed laser beam |
| US20130068384A1 (en) * | 2011-09-21 | 2013-03-21 | Polaronyx, Inc. | Method and Apparatus for Three Dimensional Large Area Welding and Sealing of Optically Transparent Materials |
| CN104999178A (en) * | 2015-08-15 | 2015-10-28 | 岳睿 | Laser welding device carrying multiple sensors |
| CN204934867U (en) * | 2015-08-15 | 2016-01-06 | 岳睿 | The laser weld monitoring system of multisensor |
| CN207512214U (en) * | 2017-11-08 | 2018-06-19 | 深圳市赢合科技股份有限公司 | A kind of laser heating system |
| CN109188609A (en) * | 2018-09-27 | 2019-01-11 | 江苏大学 | A kind of end caps welding system and welding process |
| CN109352182A (en) * | 2018-11-13 | 2019-02-19 | 中国科学院上海硅酸盐研究所 | Array sample laser heating system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104842070B (en) | Laser eutectic welder and its method | |
| CN109269985B (en) | High-frequency ultrasonic online monitoring method for internal defects of metal moving molten pool | |
| JP5414058B2 (en) | Thermal diffusivity measuring device | |
| CN102023614A (en) | Laser welding device | |
| CN109352182A (en) | Array sample laser heating system | |
| CN103658987B (en) | Soldering iron | |
| EP3609642B1 (en) | Apparatus for pre- and/or post-heating metal powders in an additive manufacturing process and additive manufacturing process | |
| CN105371947B (en) | A kind of heat dump surface irradiation degree test device and method | |
| Trombe et al. | First results obtained with the 1000kW solar furnace | |
| CN115112683A (en) | High-temperature flat plate electrical thickness measuring system and measuring method | |
| CN204975701U (en) | Laser eutectic welding set | |
| CN114576997A (en) | Laser heating system for silicon dioxide | |
| Méchain et al. | Calorimetric detection of THz radiation from femtosecond filaments in air | |
| CN116148117A (en) | Light-heat re-coupling analysis system and analysis method | |
| CN207512214U (en) | A kind of laser heating system | |
| CN218309087U (en) | Device for laser even light heating and curing of structural adhesive of battery shell | |
| CN109926718B (en) | Temperature-control laser welding system and method | |
| Gee et al. | B335–a candidate protostar? | |
| CN112517889A (en) | Dynamic riser heating system and method in casting process of titanium alloy casing | |
| CN110186949A (en) | A kind of method of rapid survey material boiling temperature to incident laser absorptivity | |
| CN217424563U (en) | Coaxial temperature measurement laser low-temperature soldering tin head | |
| KR20040098687A (en) | In-situ monitering system for bonding process and method thereof | |
| CN217701714U (en) | Laser welding head with visual positioning and temperature feedback | |
| CN114891962A (en) | Hand-held type double-circuit control laser heat treatment equipment | |
| CN220982462U (en) | High Wen Mianyuan type blackbody radiation source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20220603 |
|
| WD01 | Invention patent application deemed withdrawn after publication |