CN114563928A - Overlay mark optimization screening method, device, equipment, storage medium and program product - Google Patents
Overlay mark optimization screening method, device, equipment, storage medium and program product Download PDFInfo
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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Abstract
The invention relates to the technical field of photoetching, in particular to an overlay mark optimization screening method, which comprises the following steps: inputting a plurality of groups of marking parameters of overlay marks; selecting one or more simulation factors to be added as editable screening conditions, wherein the simulation factors comprise one or more combinations of manufacturability information, matching information, detectability information and accuracy information; calculating to obtain the information of the selected simulation factor corresponding to each group of overlay marks through a preset calculation model based on the mark parameters; and comparing the corresponding simulation factor information of each group of overlay marks with a preset standard respectively to obtain and output the overlay marks matched with the standard. The invention also provides a device, equipment, a storage medium and a program product. The method for optimally screening the overlay mark solves the problems that the existing method for screening the overlay mark is not reasonable enough and is not practical in practical application.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of photoetching, in particular to an overlay mark optimization screening method.
[ background of the invention ]
With the development of the semiconductor industry, the requirements on the manufacturing process of the integrated circuit are higher and higher, wherein the measurement of the overlay error in the integrated circuit manufacturing is an index for judging the alignment of the photoetching process, the reasonability of the designed overlay mark is judged, and the screening of the unqualified overlay mark is an important process. The existing screening method for the overlay mark is not reasonable enough and is not practical in practical application.
[ summary of the invention ]
The invention provides an optimal screening method of an overlay mark, aiming at solving the problems that the existing screening method of the overlay mark is not reasonable enough and not practical enough in practical application.
In order to solve the technical problems, the invention provides the following technical scheme: an overlay mark optimization screening method comprises the following steps:
inputting a plurality of groups of marking parameters of overlay marks;
selecting one or more simulation factors to be added as editable screening conditions, wherein the simulation factors comprise one or more combinations of manufacturability information, matching information, detectability information and accuracy information;
calculating to obtain the information of the selected simulation factor corresponding to each group of the overlay marks through a preset calculation model based on the mark parameters;
and comparing the corresponding simulation factor information of each group of the overlay marks with a preset standard respectively to obtain and output the overlay marks matched with the standard.
Preferably, the manufacturability information comprises normalized log slope and process window.
Preferably, the parameters of the process window include an exposure margin and a depth of focus.
Preferably, the detectability information comprises a normalized intensity coefficient and a sensitivity.
Preferably, the accuracy information includes: the variation of the normalized intensity coefficients, the amount of influence of the overlay signal transformation on the asymmetry, the root mean square of the overlay signal variation and the root mean square of the sensitivity value variation.
Preferably, the matching information includes conversion information, incremental conversion information, pattern critical dimension deviation, and difference of aberration sensitivity corresponding to the matching pattern critical dimension.
Preferably, the marking parameters include simulation parameters, structural parameters and basic rule structures, the calculation model includes a computational lithography model and a metrology calculation model, and the computational lithography model performs simulation calculation according to the simulation parameters, the structural parameters and the basic rule structures to obtain the manufacturability information and the matching information; and the measurement calculation model performs measurement calculation according to the simulation parameters, the structural parameters and the basic rule structure to obtain the detectability information and the accuracy information.
Preferably, the method further comprises the following steps before the calculation by the preset calculation model based on the marking parameters: selecting whether to add a perturbation to the ground rule structure.
Preferably, obtaining an overlay mark matching the criteria further comprises the steps of:
comparing the manufacturability information, the matching information, the detectability information, and the accuracy information corresponding to a set of the overlay marks with the criteria, respectively;
if the standard is matched, outputting the overlay mark;
and if the standard is not matched, screening the next group.
In order to solve the above technical problems, the present invention provides another technical solution as follows: an apparatus for applying the method comprises:
the system comprises a marking parameter input module for inputting, a selection module for selecting simulation factors, a calculation module for calculating, an information comparison module for comparing the calculated information with a preset standard and a marking output module for outputting overlay marks matching the standard.
In order to solve the above technical problems, the present invention provides another technical solution as follows: a computer device comprising a memory, a processor and a computer program stored on the memory, the processor executing the computer program to perform the steps of the method
In order to solve the above technical problems, the present invention provides another technical solution as follows: a computer readable storage medium having stored thereon computer program instructions which, when executed by a processor, implement the steps of the above-described method.
In order to solve the above technical problems, the present invention provides another technical solution as follows: a computer program product comprising computer programs or instructions which, when executed by a processor, carry out the steps of the above-mentioned method.
Compared with the prior art, the overlay mark optimized screening method provided by the invention has the following beneficial effects:
1. the method comprises the steps of performing calculation analysis on one or more of manufacturability information, matching information, detectability information and accuracy information of input marking parameters of a plurality of groups of overlay marks, comparing the manufacturability information, the matching information, the detectability information and the accuracy information with preset standards, adding editable screening conditions to simulation factors, performing simulation analysis on the characteristics of the overlay marks in a targeted manner according to needs, and accurately screening the overlay marks meeting the screening standards.
2. And carrying out simulation analysis on the normalized logarithmic slope and the process window of the overlay mark, and carrying out simulation analysis on the manufacturability according to the exposure energy, namely the exposure margin, and the focusing depth of the important dimension of the graph detected by the exposure result. The specific parameters are refined in the simulation process, so that the manufacturability of the simulation process can be accurately simulated and analyzed, and the reliability of the manufacturability simulation result is improved.
3. And carrying out simulation analysis on the normalized intensity coefficient and the sensitivity of the overlay mark, and comparing the corresponding specific numerical value of the detectability simulation result with a preset standard, thereby obtaining an evaluation result and improving the reliability of the detectability simulation result.
4. The variable quantity of the normalized intensity coefficient of the overlay mark, the overlay signal conversion, the asymmetric influence quantity, the root mean square of the overlay signal variation and the root mean square of the sensitivity value variation are analyzed and compared, fitting analysis is carried out according to the variation conditions of different parameters in the preset standard range, the simulation result of the accuracy information is obtained comprehensively, and the simulation accuracy is improved.
5. The matching information comprises conversion information, incremental conversion information, graph key size deviation and difference values of aberration sensitivity corresponding to the key sizes of the matching graphs, and the matching information of the overlay marks and the devices in the manufacturing process can be obtained by comparing the information with a preset standard, so that the simulation result is more suitable for the actual manufacturing process, and the method has important reference significance for actual production and manufacturing.
6. The marking parameters comprise simulation parameters, structure parameters and basic rule structures, the calculation model comprises a computational lithography model and a measurement calculation model, and the computational lithography model carries out simulation calculation according to the simulation parameters, the structure parameters and the basic rule structures to obtain manufacturability information and matching property information; and the measurement calculation model performs measurement calculation according to the simulation parameters, the structure parameters and the basic rule structure to obtain detectability and accuracy.
And carrying out simulation calculation through the calculation lithography model and the measurement calculation model respectively to obtain the manufacturability information, the matching property information, the detectability information and the accuracy information of the input marking parameters, so that the flow corresponding to the evaluation result is more reasonable and clear, and the rationality of the screening method is improved.
7. Before the calculation through the preset calculation model based on the marking parameters, the method also comprises the following steps: selecting whether to add perturbation to the ground rule structure.
In the actual photoetching process and the measurement process, the basic rule structure always has slight deviation, and the simulation process can be more optimized by adding the flow of selecting perturbation, so that the overlay mark screened by simulation calculation is more reasonable.
8. The embodiment of the present invention further provides an apparatus for implementing the method, which has the same beneficial effects as the method for screening the overlay mark, and is not described herein again.
9. The embodiment of the invention also provides computer equipment which has the same beneficial effects as the method for screening the overlay mark, and the detailed description is omitted here.
10. The embodiment of the present invention further provides a computer-readable storage medium, which has the same beneficial effects as the above method for screening overlay marks, and is not described herein again.
11. The embodiment of the present invention further provides a computer program product, which has the same beneficial effects as the above method for screening overlay marks, and is not described herein again.
[ description of the drawings ]
Fig. 1 is a first flowchart of a method for overlay mark optimized screening according to a first embodiment of the present invention.
Fig. 2 is a first flowchart of selecting simulation factors for simulation according to the first embodiment of the present invention.
FIG. 3 is a schematic diagram of projection lithography provided by a first embodiment of the present invention.
FIG. 4 is a schematic view of an optical metrology apparatus according to a first embodiment of the present invention.
Fig. 5 is a schematic diagram of a uDBO mark according to a first embodiment of the present invention.
Fig. 6 is a schematic diagram of a DBO mark based on the diffraction principle according to a first embodiment of the present invention.
Fig. 7 is a schematic diagram of a mark segmentation type provided by the first embodiment of the present invention.
FIG. 8 is a schematic diagram 1 of a design layer structure of 1D grating overlay sidewall angle perturbation according to a first embodiment of the present invention.
FIG. 9 is a schematic diagram 2 of a design layer structure of 1D grating overlay sidewall angle perturbation according to a first embodiment of the present invention.
FIG. 10 is a schematic diagram of the sidewall angle design of the underlying structure with 1D grating overlay sidewall angle perturbation according to the first embodiment of the present invention.
FIG. 11 is a flow chart of computational lithography provided by the first embodiment of the present invention.
FIG. 12 is a flowchart of metrology computation according to a first embodiment of the present invention.
FIG. 13 is a second flowchart of the method for screening overlay marks according to the first embodiment of the present invention.
Fig. 14 is a schematic structural diagram of an apparatus according to a second embodiment of the present invention.
Fig. 15 is a schematic structural diagram of a computer device according to a third embodiment of the present invention.
Fig. 16 is a schematic structural diagram of a computer-readable storage medium according to a fourth embodiment of the present invention.
Fig. 17 is a schematic structural diagram of a computer program product according to a fifth embodiment of the present invention.
The attached drawings indicate the following:
1. an overlay mark optimization screening method; 2. a device; 3. a computer device; 4. a computer-readable storage medium; 5. a computer program product;
10. marking parameters; 11. calculating a model; 12. manufacturability information; 13. matching information; 14. detectability information; 15. accuracy information; 16. a measurement database; 17. a system parameter database; 18. an overlay mark database; 19. a simulation factor; 20. an input module; 21. a calculation module; 22. a comparison module; 23. an output module; 30. a memory; 31. a processor; 40. computer program instructions; 50. computer programs or instructions;
100. simulation parameters; 101. a structural parameter; 102. a basic rule structure; 110. calculating a photoetching model; 111. measuring a calculation model; 300. a computer program;
1000. a material parameter; 1001. aberration; 1002. measuring equipment system parameters; 1010. the type of the overlay mark; 1020. a 3D film structure; 1100. a lithography reference index; 1101. a laser light source; 1102. a condenser lens; 1103. masking the plate; 1104. a projection objective; 1105. a silicon wafer; 1110. measuring a reference index; 1111. a light source; 1112. a filter assembly; 1113. a beam shaping component; 1114. an illumination field diaphragm; 1115. a beam splitter; 1116. overlaying a mark; 1117. an objective lens; 1118. a first detector; 1119. a mirror; 11120. a second detector; 11121. an imaging magnification system component; 11122. an imaging filtering component;
10000. photoetching wavelength material parameters; 10001. a visible wavelength material parameter; 10010. aberration in the photolithography process; 10011. measuring the process aberration; 11000. normalizing the logarithmic slope; 11001. a process window; 11100. a target coefficient; 11101. the stack sensitivity.
[ detailed description ] embodiments
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, a first embodiment of the present invention provides an optimized screening method 1 for overlay marks, including the following steps:
inputting a plurality of groups of marking parameters of overlay marks;
selecting one or more simulation factors 19 to be added as editable screening conditions, wherein the simulation factors 19 comprise one or more combinations of manufacturability information 12, matching information 13, detectability information 14 and accuracy information 15;
calculating to obtain the information of the selected simulation factor 19 corresponding to each group of overlay marks through a preset calculation model based on the mark parameters;
and comparing the corresponding simulation factor 19 information of each group of overlay marks with a preset standard respectively to obtain and output the overlay marks matched with the standard.
The method comprises the steps of performing calculation analysis on one or more of manufacturability information 12, matching information 13, detectability information 14 and accuracy information 15 of mark parameters of multiple input sets of overlay marks, comparing the manufacturability information with preset standards, adding editable screening conditions to a simulation factor 19, and performing simulation analysis on the characteristics of the overlay marks in a targeted manner according to needs, so that the overlay marks meeting the screening standards can be screened accurately, and the method is more practical and efficient in practical application.
Further, manufacturability information 12 includes normalized logarithmic slope NISL and process window PW, which includes exposure margin EL and depth of focus DOF. The exposure margin EL is the maximum deviation allowed by the exposure energy within the allowable variation range of the line width. It is a basic parameter for measuring the lithographic process. The optical exposure system can form a range of exposure energies that meets the design layout requirements, typically defined using a selected range of exposure energies within +/-10% of the amount of change in CD values detected by the exposure results. The depth of focus DOF is an important parameter in measuring the exposure process window PW, which characterizes the quality of the exposure system image relative to the wafer surface position. Within the depth of focus range, the quality of the exposure imaging can be guaranteed. The depth of focus during exposure must be much greater than the surface roughness of the wafer, so that the yield of the photolithography process can be ensured.
The matching information 13 includes conversion information Shiftkpi, incremental conversion information DeltaShiftkpi, a pattern critical dimension deviation MatchCD, and a difference value Mindeltashift of aberration sensitivities corresponding to the matching pattern critical dimension. For the evaluation criterion of the matching property information, the smaller the difference value of the aberration sensitivity corresponding to the conversion information, the incremental conversion information and the key size of the matching pattern is, the better.
The detectability information 14 includes a normalized intensity coefficient TC and a sensitivity SS. As for the evaluation criterion of the detectability information, the larger the normalized intensity coefficient TC, the better, and the smaller the sensitivity SS, the better.
The accuracy information 15 includes the amount of variation in the normalized intensity coefficients, the amount of influence of the overlay signal transformation on asymmetry, the root mean square of the overlay signal variation, and the root mean square of the sensitivity value variation. For the evaluation standard of the accuracy information, the smaller the variation of the normalized intensity coefficient is, the better the influence of the overlay signal transformation on asymmetry is.
Referring to fig. 2, manufacturability information 12 and detectability information 14 are illustratively selected as simulation factors 19, and simulation screening is performed corresponding to the addition of manufacturability screening terms and detectability screening terms.
It is to be understood that the conditions for screening the detectability information 12 are the normalized intensity coefficient TC and the sensitivity SS; the manufacturability information 14 is screened for normalized log slope NISL and process window PW.
And after introducing manufacturability screening conditions for simulation, obtaining a manufacturability result output table, transferring the screened overlay mark into the next step, carrying out detectability simulation screening, obtaining a detectability result output table according to the detectability screening conditions, and correspondingly outputting the overlay mark subjected to secondary screening. The reason why the manufacturability result output table and the detectability result output table are output is that the simulation factor 19 is the manufacturability information 12 and the detectability information 14, and if the simulation factor 19 is the accuracy information 15 and the matching information 13, the accuracy result output table and the matching result output table are output correspondingly. The simulation factors 19 are selectable, i.e., editable, as desired, so that each simulation may have a different resulting output table output.
It is to be understood that, when the simulation factor 19 is selected, the manufacturability information 12, the matching property information 13, the detectability information 14 and the accuracy information 15 may be selected at the same time for simulation, and accordingly, after each simulation step, the manufacturability result output table, the matching result output table, the detectability result output table and the accuracy result output table are output correspondingly.
Further, the mark parameters 10 include simulation parameters 100, structure parameters 101 and basic rule structures 102, the calculation model 11 includes a computational lithography model 110 and a metrology calculation model 11, and the computational lithography model 110 performs computational lithography process simulation calculation according to the simulation parameters 100, the structure parameters 101 and the basic rule structures 102 to obtain manufacturability information 12 and matching property information 13; the detectability information 12 and the accuracy information 13 are obtained by the measurement calculation model 11 through simulation calculation of the measurement calculation process according to the simulated parameters 100, the structural parameters 101 and the basic rule structure 102.
Specifically, the simulation parameters 100 include the material parameters 1000 involved in the simulation or the material parameters 1000 already present in the loaded material library. The material parameter 1000 is divided into a photolithography wavelength material parameter 10000 required at a photolithography wavelength of 193nm and a visible wavelength material parameter 10001 at a visible wavelength. The material characteristics affect the characteristics of electromagnetic wave reflection and projection for lithography and metrology calculations, so different material characteristics need to be input by the user or loaded from a material library for different wavelengths and frequencies of visible light under the lithography wavelength and during the metrology process. For example, the refractive index n1 of silicon at 550nm of visible light is 4.0817, and the attenuation coefficient k1 is 0.040882, but the refractive index n2 of silicon material at 193nm wavelength is 0.883, and the attenuation coefficient k2 is 2.788.
It is understood that the simulation parameters 100 also include an aberration 1001. The aberration 1001 includes aberration 10010 during photolithography calculation and aberration 10011 during metrology calculation.
Referring to fig. 3, a laser light source 1101 is irradiated onto a reticle 1103 through a condenser lens 1102, and a pattern on the reticle 1103 is transferred onto a silicon wafer 1105 surface through a projection objective 1104. Since the aberration 1001 is inevitably reflected by the characteristics of projection lithography, the aberration 1001 needs to be introduced when the overlay mark is selected.
Referring to fig. 4, the overlay mark for completing the photolithography process is a detection signal in the optical measurement system including the objective lens 1117, so the aberration 1001 introduced by the objective lens 1117 needs to be considered in the overlay mark screening method.
Further, one or more of manufacturability information 12, matching information 13, detectability information 14, and accuracy information 15 corresponding to each set of overlay mark are obtained through a predetermined calculation model 11, i.e., a computational lithography model 110 and a metrology calculation model 11, based on the mark parameters 10. The manufacturability information 12, the matching information 13, the detectability information 14 and the accuracy information 15 of the input mark parameters 10 are obtained by respectively carrying out simulation calculation on the calculation lithography model 110 and the measurement calculation model 11, so that the flow corresponding to the evaluation result is more reasonable and clear, and the rationality of the screening method is improved.
The simulation parameters 100 in the mark parameters 10 further include metrology equipment system parameters 1002, optical measurement parameters of an actual metrology equipment are input as the simulation parameters 100, and the detectability information 14 and the accuracy information 15 of the input overlay mark are calculated by the metrology calculation model 11.
Referring to fig. 4, for example, light emitted from the light source 1111 passes through the light filtering assembly 1112, the beam shaping assembly 1113 and the field illumination diaphragm 1114 and is irradiated onto the overlay mark X1116 through the beam splitter 1115, and after signals diffracted by the overlay mark X1116 are collected by the objective 1117, one path of signals is collected by the first detector 1118, and the other path of signals passes through the mirror 1119 and is collected by the second detector 11120. The signal of the second detector 11120 is processed by the imaging amplification system component 11121 and the imaging filter component 11122. Specifically, metrology device system parameters 1002 include: inputting the spectral information of the equipment, the measuring illumination mode, the size of the detection objective lens, the numerical value of frequency domain filtering, the aperture size and the like. The spectral information is measured from the light source 1111 in fig. 4, and the result is used as input for the metrology model calculation. The measurement of the illumination mode specifically refers to that different illumination modes can be selected in the overlay device so as to measure the illumination mode meeting actual production indexes (such as measurement repeatability) when aiming at different processes. Common illumination modes in the industry are quadrupole illumination for DBO, dipole illumination for u-DBO. The detection objective refers to the numerical aperture of the objective 1117 of the measurement system in fig. 4, and the size of the objective 1117 determines the spatial range over which the overlay signal is collected during measurement. And the numerical aperture size pointer of the frequency domain filtering is the numerical size of an aperture diaphragm which is designed before imaging for filtering 0-order light for the diffraction signal of the u-DBO.
The structural parameter 101 includes a type of an overlay mark, which may be imported from a database, may also define a common different overlay mark type 1010, and may also select whether to split the mark type.
For example, referring to fig. 5 to 7, after inputting the structure parameter 101, the mark may be sliced according to the size requirements of different marks, and for example, referring to fig. 7, the slicing types include BasicLS, ParalST _ p (n), VertST _ p (n), and 2DST _ p (n).
Further, after one or more of the manufacturability information 12, the matching information 13, the detectability information 14 and the accuracy information 15 corresponding to each set of overlay marks are obtained through calculation, the overlay marks are compared with preset standards, overlay marks of the matching standards are obtained and output, and screening of the overlay marks is completed.
It is to be understood that one or more of manufacturability information 12, matching information 13, detectability information 14, and accuracy information 15 are determined by selected simulation factors 19.
The method can accurately and comprehensively screen out the qualified overlay marks by performing calculation analysis on one or more of the input manufacturability information 12, the matching property information 13, the detectability information 14 and the accuracy information 15 of the marking parameters 10 of a plurality of sets of overlay marks and comparing the preset standards, is easy to realize and is more practical in practical application.
Preferably, after inputting the marking parameters 10 and before calculating by the preset calculation model based on the marking parameters 10, the method further comprises the following steps: a choice is made whether to add perturbations to the ground rule structure 102.
The ground rule structure 102 includes a 3D film structure 1020 after all processes are completed, and whether or not to set a perturbation is selected according to the 3D film structure 1020.
Illustratively, referring to fig. 8, each layer may be free to add materials and structures. The overlay design only needs to design periodic structure gratings in the upper and lower books and then design perturbation on the basic structure. Illustratively, the sidewall angle is designed for the underlying structure as shown in fig. 9-10. Common structural perturbations include, among others, changes in the angle of the sidewalls of the structure, tilting of the bottom, etc. In the actual lithography process and the measurement process, the basic rule structure 102 often has slight deviation, and the simulation process can be optimized by adding the flow of selecting perturbation, so that the overlay mark screened by simulation calculation is more reasonable.
Further, the simulation is performed based on the computational lithography model 110 and the metrology calculation model 11. The computational lithography model 110 is used to compute the manufacturability and matching of the evaluation overlay marks; the measurement calculation model 11 is used for calculating the detectability and accuracy of the overlay marks designed by the simulation.
Specifically, the step of calculating the lithography model 110 to perform simulation calculation according to the simulation parameters 100, the structure parameters 101 and the basic rule structure 102 to obtain the manufacturability information 12 and the matching information 13 further includes the following steps:
the calculation lithography model 110 simulates the lithography process according to the simulated parameters 100, the structural parameters 101 and the basic rule structure 102 to perform simulation calculation, so as to obtain the lithography reference index 1100 corresponding to manufacturability and matching;
the lithography reference index 1100 is compared with a preset lithography database to obtain manufacturability information 12 and matching information 13.
Exemplarily, referring to fig. 11, a material parameter 1000 for calculating a photolithography 193nm film system, a photolithography process aberration 10010, and an overlay mark type 1010 design are input, and a basic rule structure 102 after all process flows of an overlay mark is input to select whether to set a perturbation, if the perturbation is set, the perturbation structure is input, if the perturbation is set, the basic rule structure 102 is input, an input value is introduced into a calculation photolithography model 110, and a photolithography reference index 1100 is obtained by calculation. The lithographic reference index 1100 includes a normalized logarithmic slope 11000 and a process window 11001, and the normalized logarithmic slope 11000 and the process window 11001 are compared to a preset database to evaluate manufacturability and matching of overlay marks. Different marking parameters 10 correspond to different lithography reference indexes 1100, and the overlay mark meeting the manufacturability and matching standard can be obtained by comparing the calculated lithography reference indexes 1100 with the corresponding database, so that the screening result is more optimized.
Specifically, the step of the metrology calculation model 11 performing the metrology calculation based on the simulation parameters 100, the structure parameters 101 and the rule base structure 102 to obtain the detectability information 14 and the accuracy information 15 further comprises the following steps:
the measurement calculation model 11 simulates a measurement process according to the simulation parameters 100, the structure parameters 101 and the basic rule structure 102 to perform measurement calculation, and a measurement reference index 1110 corresponding to detectability and accuracy is obtained;
the measured reference index 1110 is compared with the predetermined measurement database 16 to obtain the detectability information 14 and the accuracy information 15.
For example, referring to fig. 12, a material parameter 1000 of a visible light lower film system, a measurement equipment system parameter 1002, a measurement process aberration 10011, and an overlay mark type 1010 are input, and a basic rule structure 102 after all process flows of an overlay mark is input to select whether to set a perturbation, if the perturbation is set, the perturbation structure is input, if the perturbation is set, the basic rule structure 102 is input, and the input value is introduced into a measurement calculation model 11 for measurement calculation, so as to obtain a measurement reference index 1110 corresponding to detectability and accuracy. The measurement reference index 1110 includes a target coefficient 11100 and a stack sensitivity 11101, and the target coefficient 11100 and the stack sensitivity 11101 are compared with a preset measurement database 16 to obtain the detectability information 14 and the accuracy information 15. Different marking parameters 10 will correspond to different metrology reference indices 1110, and alignment marks meeting detectability information 14 and accuracy criteria can be obtained by comparing the calculated metrology reference indices 1110 to the corresponding metrology database 16, thereby optimizing the screening results.
Further, obtaining an overlay mark matching the criteria further comprises the steps of:
comparing manufacturability information 12, matching information 13, detectability information 14 and accuracy information 15 corresponding to a set of overlay marks with a standard respectively;
if the manufacturability information 12, the matching information 13, the detectability information 14 and the accuracy information 15 corresponding to the overlay mark match the standard, outputting the overlay mark;
if the manufacturability information 12, the matching information 13, the detectability information 14 and the accuracy information 15 corresponding to the overlay mark do not match the criteria, the manufacturability information 12, the matching information 13, the detectability information 14 and the accuracy information 15 corresponding to the next set of overlay marks are compared to the criteria, respectively.
Preferably, the method further comprises the steps of:
the measurement reference index 1110 is compared with the preset system parameter database 17 to obtain the corresponding reference simulation parameter 100 for guiding the configuration of the measurement optical hardware of the measurement device, such as wavelength and illumination mode. In the process of measurement calculation, the obtained measurement reference index 1110 is compared with the preset measurement database 16, and the corresponding reference simulation parameter 100 can be output, and in practical application, for each group of mark parameters 10, parameters of the system, such as spectral information of input equipment, a measurement illumination mode, the size of a detection objective lens, the numerical aperture of frequency domain filtering, and the like, can be adjusted in a targeted manner according to the simulation parameters 100, so that the measurement process is more targeted, and the measurement result is more accurate.
Preferably, the method further comprises the following steps after outputting the overlay mark matching the criterion:
the resulting overlay mark matching the criteria is saved to an overlay mark database 18, which may be used as reference, empirical data for subsequent simulations. The overlay mark matching the standard is stored in the overlay mark database 18, so that when the same or similar data is transmitted next time, the simulation steps can be reduced, the simulation time can be saved, and even the corresponding simulation result can be directly output.
Preferably, the method further comprises the following steps after outputting the overlay mark matching the criterion:
and selecting whether to adjust the variable quantity of the simulation parameters 100 according to the output result to carry out simulation screening again.
Referring to fig. 13, in an exemplary embodiment, the whole process is optimized and screened through a graphic flow, first, an overlay mark type 1010 is input to design, edit and select a simulation factor 19, a material parameter 1000 required for simulation, an aberration 1001 required for simulation, a measurement apparatus system parameter 1002, and a basic rule structure 102 after all process flows are overlay marked, whether a perturbation is set or not is selected according to the basic rule structure 102, if a perturbation is set, the perturbation is input in a perturbation structure, and if no perturbation is set, the basic rule structure is input. Loading a calculation model 11 and parameters for simulation calculation, wherein the calculation lithography model 110 is used for simulation calculation, evaluation, analysis, manufacturability and matching performance, the measurement calculation model 11 is used for evaluating, analysis, detectability and accuracy, the obtained analysis results of manufacturability, matching performance, detectability and accuracy are compared and evaluated with preset standards to obtain overlay marks of matching standards, whether the output result meets requirements is judged, if not, the simulation parameters 100 are adjusted, the calculation model 11 is loaded for simulation calculation again, if yes, the overlay marks of the matching standards and the reference simulation parameters 100 of the optical system of the measurement equipment are output, and the obtained overlay marks of the matching standards are stored in an overlay mark database 18.
A device 2 is further provided in the second embodiment of the present invention, for implementing the method 1, please refer to fig. 14, and the device 2 includes a parameter input module 20 for inputting, a calculation module 21 for calculating, an information comparison module 22 for comparing the calculated information with a preset standard, a mark output module 23 for outputting an overlay mark of the matching standard, and an editing module 24 for editing and selecting a simulation factor.
The third embodiment of the present invention further provides a computer apparatus 3, please refer to fig. 15 including a memory 30, a processor 31 and a computer program 300 stored on the memory 30, wherein the processor 31 executes the computer program 300 to implement the steps of the method 1.
The fourth embodiment of the present invention further provides a computer readable storage medium 4, please refer to fig. 16, on which computer program instructions 40 are stored, when the computer program instructions 40 are executed by a processor, the steps of the method 1 are implemented.
A fifth embodiment of the invention provides a computer program product 5, please refer to fig. 17, comprising a computer program or instructions 50, wherein the computer program or instructions 50, when executed by a processor, implement the steps of the method 1.
In the embodiments provided herein, it should be understood that "B corresponding to a" means that B is associated with a from which B can be determined. It should also be understood, however, that determining B from a does not mean determining B from a alone, but may also be determined from a and/or other information.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. Those skilled in the art should also appreciate that the embodiments described in this specification are exemplary and alternative embodiments, and that the acts and modules illustrated are not required in order to practice the invention.
In various embodiments of the present invention, it should be understood that the sequence numbers of the above-mentioned processes do not imply an inevitable order of execution, and the execution order of the processes should be determined by their functions and inherent logic, and should not constitute any limitation on the implementation process of the embodiments of the present invention.
The flowchart and block diagrams in the figures of the present application illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will be understood that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
The above detailed description is provided for the method for optimizing and screening overlay marks disclosed in the embodiments of the present invention, and the specific examples are applied herein to explain the principles and embodiments of the present invention, and the description of the above embodiments is only used to help understanding the method and its core ideas of the present invention; meanwhile, for the persons skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present description should not be construed as a limitation to the present invention, and any modification, equivalent replacement, and improvement made within the principle of the present invention should be included in the protection scope of the present invention.
Claims (13)
1. An overlay mark optimization screening method is used for simulating overlay errors, and is characterized in that: the method comprises the following steps:
inputting a plurality of groups of marking parameters of overlay marks;
selecting one or more simulation factors to be added as editable screening conditions, wherein the simulation factors comprise one or more combinations of manufacturability information, matching information, detectability information and accuracy information;
calculating to obtain the information of the selected simulation factor corresponding to each group of the overlay marks through a preset calculation model based on the mark parameters;
and comparing the corresponding simulation factor information of each group of the overlay marks with a preset standard respectively to obtain and output the overlay marks matched with the standard.
2. The method of claim 1, wherein:
the manufacturability information includes normalized log slope and process window.
3. The method of claim 3, wherein:
the parameters of the process window include exposure margin and depth of focus.
4. The method of claim 1, wherein:
the detectability information includes a normalized intensity coefficient and a sensitivity.
5. The method of claim 1, wherein:
the accuracy information includes: the variation of the normalized intensity coefficients, the amount of influence of the overlay signal transformation on the asymmetry, the root mean square of the overlay signal variation and the root mean square of the sensitivity value variation.
6. The method of claim 1, wherein:
the matching information includes conversion information, incremental conversion information, figure critical dimension deviation and difference of aberration sensitivity corresponding to the matching figure critical dimension.
7. The method of claim 1, wherein:
the marking parameters comprise simulation parameters, structure parameters and basic rule structures, the calculation model comprises a computational lithography model and a measurement calculation model, and the computational lithography model carries out simulation calculation according to the simulation parameters, the structure parameters and the basic rule structures to obtain the manufacturability information and the matching property information; and the measurement calculation model performs measurement calculation according to the simulation parameters, the structural parameters and the basic rule structure to obtain the detectability information and the accuracy information.
8. The method of claim 1, wherein:
before the calculation through a preset calculation model based on the marking parameters, the method further comprises the following steps: selecting whether to add a perturbation to the ground rule structure.
9. The method of claim 1, wherein:
obtaining an overlay mark matching the criteria further comprises the steps of:
comparing the manufacturability information, the matching information, the detectability information and the accuracy information corresponding to a set of the overlay marks with the standard respectively;
if the standard is matched, outputting the overlay mark;
and if the standard is not matched, screening the next group.
10. An apparatus for applying the method according to any one of claims 1-9, characterized in that: the device comprises:
the system comprises a marking parameter input module for inputting, a selection module for selecting simulation factors, a calculation module for calculating, an information comparison module for comparing the calculated information with a preset standard and a marking output module for outputting overlay marks matching the standard.
11. A computer device, characterized by: comprising a memory, a processor and a computer program stored on the memory, the processor executing the computer program for carrying out the steps of the method as claimed in claim 1.
12. A computer-readable storage medium having computer program instructions stored thereon, characterized in that: the computer program instructions, when executed by a processor, implement the steps of the method of claim 1.
13. A computer program product, characterized in that: comprising computer programs or instructions which, when executed by a processor, carry out the steps of the method of claim 1.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117055304A (en) * | 2023-06-06 | 2023-11-14 | 全芯智造技术有限公司 | Method, apparatus and medium for generating overlay mark patterns |
| CN117289562A (en) * | 2023-11-22 | 2023-12-26 | 全芯智造技术有限公司 | Method, apparatus and medium for simulating overlay marks |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117055304A (en) * | 2023-06-06 | 2023-11-14 | 全芯智造技术有限公司 | Method, apparatus and medium for generating overlay mark patterns |
| CN117055304B (en) * | 2023-06-06 | 2024-01-05 | 全芯智造技术有限公司 | Method, apparatus and medium for generating overlay mark patterns |
| CN117289562A (en) * | 2023-11-22 | 2023-12-26 | 全芯智造技术有限公司 | Method, apparatus and medium for simulating overlay marks |
| CN117289562B (en) * | 2023-11-22 | 2024-02-13 | 全芯智造技术有限公司 | Method, apparatus and medium for simulating overlay marks |
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