CN114560495A - Random laser scattering material based on zero-dimensional perovskite microcrystalline phase change, laser device and preparation of random laser scattering material - Google Patents

Random laser scattering material based on zero-dimensional perovskite microcrystalline phase change, laser device and preparation of random laser scattering material Download PDF

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CN114560495A
CN114560495A CN202210281543.XA CN202210281543A CN114560495A CN 114560495 A CN114560495 A CN 114560495A CN 202210281543 A CN202210281543 A CN 202210281543A CN 114560495 A CN114560495 A CN 114560495A
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dmso
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孟宪赓
石信民
王凯
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Qilu University of Technology
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Abstract

The invention provides a random laser scattering material based on zero-dimensional perovskite microcrystalline phase change, a laser device and preparation thereof. The preparation of the random laser scattering material comprises the following steps: uniformly mixing a cesium bromide (CsBr-DMSO) solution and a lead bromide (PbBr-DMSO) solution to obtain a mixed solution, and placing the mixed solution in an open container; placing the open container containing the mixed solution in dichloromethane (CH)2Cl2) Then obtaining zero-dimensional perovskite crystals through reaction and washing in the closed container; dispersing the zero-dimensional perovskite crystal in isopropanol (C)3H8O) and dimethyl sulfoxide (DMSO), adding a conversion agent deionized water, reacting, centrifuging, and drying to obtain the random laser scattering material. The preparation method is simple and low in cost; prepared random laser powderThe shot material has a special regular porous morphology; and the laser device prepared by the material with the morphology has good random laser mode and laser performance.

Description

Random laser scattering material based on zero-dimensional perovskite microcrystalline phase change, laser device and preparation of random laser scattering material
Technical Field
The invention relates to a random laser scattering material based on zero-dimensional perovskite microcrystalline phase change, a laser device and preparation thereof, and belongs to the technical field of lasers.
Background
Micro-nano optics is a new leading edge basic direction generated by the intersection of photonics and micro-nano technology, and can enable people to control the interaction between light and substances on a micro-scale or nano-scale and explore new physical phenomena. From the miniaturization of the laser, the micro-nano laser is a novel light source, and the research on the micro-nano laser is an important branch of the nano optical field. Due to its dimensional characteristics and high light restriction, research on micro-nano lasers has attracted more and more attention of researchers in recent years. Different types of nano-lasers have been successfully implemented and are considered to be ideal light sources for realizing optical interconnection and optical communication on a chip in the future by virtue of ultra-small size, extremely-low threshold value and ultra-wide modulation bandwidth. In addition, related research results show that the micro-nano laser opens up a new application scene in the aspects of biosensing, medical imaging, three-dimensional display and the like. Due to the size advantage of the micro-nano laser, compared with the traditional large-size laser, the micro-nano laser means lower energy consumption.
The excellent optical gain performance, tunable output wavelength, nonlinear optics and other characteristics of the lead-halogen perovskite material lay a solid foundation for the application of the lead-halogen perovskite material in the fields of nano photonics, small laser sensing, imaging and the like. The lead-halogen perovskite material can be used as a good laser gain medium to obtain high-performance laser with low threshold, high quality factor and narrow line width. The lead-halogen perovskite nano wire and the micron sheet with regular geometric shapes can be used as an optical resonant cavity. Although the size of the nano crystal is lower than the diffraction limit, a closed loop of an optical amplification path can be formed after multiple scattering in the gain thin film medium, and random laser behaviors occur.
Lead-halogen perovskite materials can be classified into zero-dimensional perovskites, two-dimensional perovskites, and three-dimensional perovskites. Three-dimensional perovskites are favored by researchers because of their own high quantum yields and high optical gain coefficients; at present, more and more scholars focus on the preparation and property research of the double-component perovskite. In the research process of preparing the two-component or even multi-component perovskite, the ligand or the precursor is regulated and controlled in the reaction process, so that the two-component or even multi-component perovskite is prepared. But in recent years, the ionic properties of zero-dimensional perovskites cause their chemical instability in polar solvents, and in combination with the "soft properties" (high ion mobility and dynamic surface ligand binding) of lead-halide perovskite nanocrystals, they have become interesting candidate materials for studying chemical and crystal transformations. In the prior art, relevant researches on phase change of zero-dimensional perovskite microcrystals induced by polar solvents are reported. For example, chinese patent document CN113173596A discloses a high-stability random laser scattering material based on three-dimensional perovskite nanocrystals, a laser device and a preparation method thereof; the preparation method comprises the following steps: fully dissolving cesium carbonate in oleic acid to obtain a cesium oleate solution; fully dissolving lead bromide in a mixed solution containing oleic acid, hydrogen bromide, oleylamine and N, N-dimethylformamide to obtain a lead bromide solution; evenly mixing oleic acid, normal hexane, a cesium oleate solution and a lead bromide solution, and then carrying out heating reaction under the stirring condition to obtain zero-dimensional perovskite nanocrystals; adding a transforming agent, performing ultrasonic treatment, and finally performing centrifugation, washing and drying to obtain a random laser scattering material; the conversion agent is deionized water, methanol, ethanol or glacial acetic acid. The random laser scattering material prepared by the invention has good stability in air and water-containing environment; the prepared laser device has stable shape and structure after water treatment, and can still maintain stable random laser mode and performance thereof. However, the preparation method of the zero-dimensional perovskite nanocrystal is complex and high in cost; the obtained laser device is not of a porous structure, only has a light amplification phenomenon, and the laser mode and the laser performance need to be improved.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a random laser scattering material based on zero-dimensional perovskite microcrystal phase change, a laser device and a preparation method thereof. The preparation method is simple and low in cost; the prepared random laser scattering material has a special regular porous shape; and the laser device prepared by the material with the morphology has good random laser mode and laser performance.
The technical scheme of the invention is as follows:
based on zero-dimensional perovskite (Cs)4PbBr6) A microcrystalline phase-changed random laser scattering material, wherein the random laser scattering material comprises a two-dimensional perovskite (2D CsPb)2Br5) And three-dimensional perovskites (3D CsPbBr)3) The microscopic morphology of the random laser scattering material is as follows; cubic porous microcrystals with the side length of 10-70 μm.
The preparation method of the random laser scattering material based on the zero-dimensional perovskite microcrystal phase transition comprises the following steps:
(1) fully dissolving cesium bromide (CsBr) in dimethyl sulfoxide (DMSO) to obtain a cesium bromide (CsBr-DMSO) solution; fully dissolving lead bromide (PbBr) in dimethyl sulfoxide (DMSO) to obtain a lead bromide (PbBr-DMSO) solution;
(2) uniformly mixing a cesium bromide (CsBr-DMSO) solution and a lead bromide (PbBr-DMSO) solution to obtain a mixed solution, and placing the mixed solution in an open container; placing the open container containing the mixed solution in dichloromethane (CH)2Cl2) Then obtaining zero-dimensional perovskite crystals through reaction and washing in the closed container;
(3) dispersing the zero-dimensional perovskite crystal in isopropanol (C)3H8O) and dimethyl sulfoxide (DMSO), adding a conversion agent deionized water, reacting, centrifuging, and drying to obtain the random laser scattering material.
Preferably, in step (1), the molar concentration of the cesium bromide solution is 0.1 to 0.5mol/L, preferably 0.2 mol/L.
Preferably, according to the invention, in step (1), the molar concentration of the lead bromide solution is 0.01-0.1mol/L, preferably 0.05 mol/L.
Preferably according to the invention, in step (2), the volume ratio of the cesium bromide solution to the lead bromide solution to the dichloromethane is 0.1-0.5:0.1-0.5:1-5, preferably 1:1: 10.
According to the invention, in the step (2), the inside of the open container containing the mixed solution and dichloromethane (CH) are filled2Cl2) The inner parts of the closed containers are communicated.
Preferably, according to the invention, in step (2), the reaction temperature is 40 to 60 ℃, preferably 40 ℃.
Preferably, according to the invention, in step (2), the reaction time is 24 to 48 hours, preferably 24 hours.
Preferably, in step (2), the washing is performed using a mixed solvent of isopropanol and dimethyl sulfoxide; in the mixed solvent, the volume ratio of the isopropanol to the dimethyl sulfoxide is 2-4: 1.
According to the invention, in the step (2), the reaction is carried out at 40 ℃, which is beneficial to obtaining the zero-dimensional perovskite microcrystal with regular appearance; the reaction time is controlled to be 24h, and if the reaction time is shorter, the generated crystals are fewer in quantity, smaller in size and irregular in appearance; if the reaction time is too long, the size of the generated crystal is too large and the crystal is easy to break; when the temperature is too high or too low, the number of crystals is too small, and the morphology is not good.
According to the present invention, in the step (3), the volume ratio of isopropanol to dimethyl sulfoxide in the mixed solvent is 2-4:1, preferably 3: 1.
According to the invention, in the step (3), the zero-dimensional perovskite crystal is immersed in the mixed solvent. Preferably, the ratio of the number of moles of cesium bromide in step (1) to the volume of the mixed solvent in step (3) is 0.5 to 1.5mol/L, preferably 0.8 mol/L.
Preferably, in step (3), the volume of the deionized water as the transforming agent is 0.1-1.5%, preferably 0.2-1.2% of the volume of the mixed solvent. The invention uses deionized water as a conversion agent, and the obtained material has more excellent laser performance when applied to a laser, and can promote the complete transformation of zero-dimensional perovskite microcrystal.
Preferably, according to the invention, in the step (3), the reaction temperature is room temperature, and the reaction time is 1-5min, preferably 3 min; the reaction is carried out under the condition of stirring, and the stirring speed is 300-800 r/min.
Preferably, in step (3), the drying temperature is 30-50 ℃ and the drying time is 0.5-5 h.
A laser device having a structure comprising: random laser scattering materials based on zero-dimensional perovskite microcrystal phase change are dispersed on the carrier.
According to a preferred embodiment of the invention, the support is quartz glass.
The preparation method of the laser device comprises the following steps: uniformly dispersing the random laser scattering material based on the zero-dimensional perovskite microcrystal phase change in isopropanol, then coating the isopropanol on a carrier, and drying to obtain the material.
The random laser scattering material based on zero-dimensional perovskite microcrystalline phase change is applied to a laser as a gain medium or an optical resonant cavity.
The reaction principle of the invention is as follows:
the invention firstly prepares the zero-dimensional perovskite (0D Cs)4PbBr6) Then promoting 0DCs by simple specific polarity conversion agent treatment4PbBr6Conversion to three-dimensional perovskite CsPbBr3And two-dimensional perovskite CsPb2Br5. The most fundamental mechanism is the use of CsBr in aqueous solution (or water, isopropanol (C)3H8O) mixed solution with DMSO); when 0D Cs4PbBr6When in contact with water, 0D Cs4PbBr6The CsBr in (1) is stripped off, and a phase transition occurs. 0D Cs4PbBr6CsBr at the part of the microcrystals contacting with water is stripped and dissolved in water (or water, isopropanol (C)3H8O) mixed solution of DMSO), and generates 2D CsPb in situ2Br5And 3D CsPbBr3A perovskite; with continuous water molecules with Cs4PbBr6Microcrystalline contact, reaction, Cs4PbBr6The microcrystal is continuously decomposed and converted into 2D CsPb2Br5And 3D CsPbBr3. During the transformation, Cs4PbBr6The microcrystal itself not only serves as a phase change providing raw material, but also can serve as a structural framework, Cs4PbBr6The microcrystals are continuously decomposed to generate 2D CsPb2Br5And 3D CsPbBr3Attached to non-decomposed Cs4PbBr6Microcrystallization, eventually complete to Cs4PbBr6Complete conversion of the crystallites into 2D CsPb2Br5And 3D CsPbBr3A two-component heterostructure. The specific polarity transforming agent of the invention promotes Cs4PbBr6Microcrystalline oriented 2D CsPb2Br5And 3D CsPbBr3Transformation of the crystallites.
In the phase change reaction process of zero-dimensional perovskite microcrystal，C3H8And a polar environment is constructed by the mixed solution of O and DMSO. Compared with the method of directly putting the zero-dimensional perovskite microcrystal into water, the mixed solution is equivalent to a layer of protective barrier; c in the mixed solution3H8O and DMSO solution is Cs4PbBr6The microcrystal has barrier protection effect and delayed Cs4PbBr6Direct contact of the microcrystals with deionized water (conversion agent); by utilizing a micro-kinetic model similar to water molecules, the mixed solution is equivalent to a layer of 'anti-erosion solvent', the diffusion coefficient of the water molecules in the solution can be influenced, the contact between the water molecules and microcrystals is slowed down, and the porous structure material is favorably obtained.
The invention has the beneficial effects that:
1. the preparation method of the zero-dimensional perovskite is simple and low in cost. The preparation method is beneficial to obtaining the cubic zero-dimensional perovskite microcrystal with large size and regular shape. The zero-dimensional perovskite prepared by the preparation method can be used in isopropanol (C) of the invention3H8O) and dimethyl sulfoxide (DMSO) exist stably in a mixed solvent, and the shape is not broken, so that the preparation of the porous material is facilitated.
2. Zero-dimensional perovskite Cs prepared by the invention4PbBr6Is regular cubic microcrystal, and is treated by specific mixed solvent and specific polarity conversion agent4PbBr6Phase transition to regular porous crystallites CsPbBr3And CsPb2Br5. The random laser scattering material obtained by the invention is composed of a plurality of CsPbBr3And CsPb2Br5The microcrystals are staggered to form a porous cubic structure. The mixed solvent is specially selected; if the selection of the mixed solvent is not appropriate (such as only DMSO is used), the morphological structure of the 0D perovskite is directly damaged; such as isopropanol (C) in a mixed solvent3H8O) and dimethyl sulfoxide (DMSO) in inappropriate proportion, and can also damage the morphology structure of the 0D perovskite, and influence the morphology, structure and performance of the finally obtained light scattering material. The conversion agent water of the invention needs to be used in a proper amount, and has a certain influence on the size and the performance of the obtained light scattering materialAnd (6) sounding. In addition, when the phase-changed microcrystal is dried, the drying temperature needs to be proper, and if the temperature is too high, the final microcrystal particles are irregular in shape and even broken.
3. The material of the invention has simple preparation method and low cost. The random laser scattering material is applied to the preparation of laser devices, and shows excellent laser performance. The obtained random laser scattering material can be used as a gain medium and a gain scattering material, and has good laser performance and laser mode. CsPbBr in two-component heterojunction3The microcrystal is used as a gain medium of the laser, generates a light amplification phenomenon under the excitation of single-photon picosecond laser pulse, and realizes stable ASE. The laser prepared by the random laser scattering material has simple manufacturing method and flexible regulation and control mode; the method can be used in the fields of optical communication, digital storage, optical imaging and the like.
Drawings
FIG. 1 shows zero-dimensional perovskite Cs prepared in example 1 of the present invention4PbBr6SEM image of the crystallites.
FIG. 2 is an SEM photograph of random laser light scattering materials prepared in examples 1-6 of the present invention.
FIG. 3 is a crystal surface topography under a high-magnification scanning electron microscope of the random laser scattering material prepared in example 1 of the present invention.
FIG. 4 shows the zero-dimensional perovskite Cs prepared by the method of example 14PbBr6High resolution transmission electron microscopy images of microcrystalline and random laser scattering materials.
FIG. 5 shows the zero-dimensional perovskite Cs prepared by the method of example 1 of the present invention4PbBr6XRD patterns of crystallites and random laser light scattering materials prepared in examples 1-6.
Fig. 6 is a bright field diagram and a laser intensity and half-peak width variation diagram of each microcrystalline laser device with different sizes prepared by the method in example 1 of the present invention.
Fig. 7 is a bright field diagram and a laser intensity and half-peak width variation diagram of each zero-dimensional perovskite microcrystalline laser device with different sizes prepared in example 1 of the present invention.
Fig. 8 is a microscope bright field image (fig. 8a) and an SEM image (fig. 8b) of the random laser light scattering materials prepared in comparative examples 2 and 4 of the present invention.
Detailed Description
The present invention will be further described with reference to the following drawings and detailed description, but is not limited thereto.
The experimental methods used in the examples are all conventional methods unless otherwise specified.
The materials, reagents and the like used in the examples are commercially available unless otherwise specified.
Example 1
A preparation method of a random laser scattering material based on zero-dimensional perovskite microcrystal phase transition comprises the following steps:
(1) CsBr was dissolved in 20ml of DMSO solution to prepare a CsBr-DMSO solution having a concentration of 0.2 mol/L.
(2) PbBr was dissolved in 20ml of DMSO solution to prepare a PbBr-DMSO solution at a concentration of 0.05 mol/L.
(3) Respectively adding 0.5mL of prepared CsBr-DMSO solution and 0.5mL of PbBr-DMSO solution into a 3mL open glass bottle, and uniformly mixing; placing the open glass bottle in a container with 5mL CH2Cl2In a 20ml glass bottle, closing the 20ml glass bottle, opening the interior of the container and filling with dichloromethane (CH)2Cl2) The inner parts of the closed containers are communicated, and then the closed containers are placed in an oven at 40 ℃ for reaction for 24 hours; after the reaction was completed, a 3ml open glass bottle was taken out, the crystals were taken out, and then the prepared 5ml mixed solution (C) was used3H8O DMSO volume ratio of 3:1) the crystals were washed twice to obtain zero-dimensional perovskites. The obtained zero-dimensional perovskite was redispersed in 5ml of a prepared mixed solution (C)3H8Adding 0.01ml of deionized water into the mixture according to the volume ratio of O to DMSO being 3:1), stirring the mixture on a magnetic stirrer at the room temperature of 500r/min for 3min, centrifuging the mixture, and drying the mixture at the temperature of 40 ℃ for 2h to obtain the random laser scattering material. The resulting random laser scattering material was stored in isopropanol solution.
Zero-dimensional perovskite Cs prepared by the embodiment4PbBr6SEM images of the crystallites and the random laser scattering material are shown in FIG. 1 and FIG. 2a, respectivelyFIG. 3 is an SEM image of a random laser scattering material under high magnification, and it can be seen that the method of the present invention makes cubic microcrystalline Cs4PbBr6Phase transition to CsPbBr with regular porous particle size3&CsPb2Br5Microcrystals, CsPbBr is clearly observed in FIG. 33&CsPb2Br5Surface topography of the crystallites.
Zero-dimensional perovskite Cs prepared by the embodiment4PbBr6The high-resolution transmission electron microscope and XRD of the nanocrystals are respectively shown in fig. 4a and 5a, and the high-resolution transmission electron microscope and XRD of the random laser scattering material prepared in the embodiment are respectively shown in fig. 4b and 5b, so that the random laser scattering material obtained by the method of the invention simultaneously contains three-dimensional perovskite CsPbBr3And two-dimensional perovskite CsPb2Br5。
A laser device having a structure comprising: random laser scattering materials based on zero-dimensional perovskite microcrystal phase change are dispersed on the quartz glass.
The preparation method comprises the following steps:
uniformly dispersing a random laser scattering material based on zero-dimensional perovskite microcrystalline phase change into 5mL of isopropanol, then dropwise adding the isopropanol onto a quartz glass sheet carrier, and drying to form dispersed porous microcrystalline particles to obtain the laser device.
When the microcrystals having particle diameters of 20 to 30 μm (FIGS. 6a, b), 30 to 40 μm (FIGS. 6c, d), 40 to 50 μm (FIGS. 6e, f) and 50 to 60 μm (FIGS. 6g, h) respectively in the laser device obtained by the method of the present invention were deenergized using a pulsed laser (wavelength: 470nm, pulse width: 25ps, frequency: 10hz), it was observed that spontaneous amplification radiation was generated as shown in FIG. 6, and the laser was generated with increasing pumping energy and its intensity was gradually increased, indicating that the prepared laser device was capable of emitting random laser light having an amplified spontaneous emission phenomenon. Analysis and verification prove that the excellent performance of the laser device prepared by the invention has universality, and although the crystallite grain sizes are different, the laser performance of the crystallites with different grain sizes has uniformity.
To verify that the random laser scattering material formed by phase transformation is relative to 0D Cs4PbBr6The microcrystalline performance is improved, and the 0D Cs prepared by the embodiment is4PbBr6The laser device was prepared as described above. The laser threshold of the 0D Cs4PbBr6 microcrystalline material was much higher and the 0D Cs4PbBr6 perovskite microcrystalline was more difficult to excite, as compared with the laser threshold of the 2D-3D two-component perovskite microcrystalline material phase-transformed after water addition, as shown in FIG. 7, by using a pulsed laser (wavelength: 470nm, pulse width: 25ps, frequency: 10hz) to excite the crystallites of different particle sizes in the resulting laser device (in FIG. 7, a, c, e, g are bright field patterns of the crystallites of different particle sizes 0D Cs4PbBr6, and b, D, f, g are the laser intensity and half-peak width variation patterns of the crystallites of the above-mentioned 0D Cs4PbBr6, respectively).
Example 2
A preparation method of a random laser scattering material based on zero-dimensional perovskite microcrystal phase transition comprises the following steps:
(1) CsBr was dissolved in 20ml of DMSO solution to prepare a CsBr-DMSO solution having a concentration of 0.2 mol/L.
(2) PbBr was dissolved in 20ml of DMSO solution to prepare a PbBr-DMSO solution at a concentration of 0.05 mol/L.
(3) Respectively adding 0.5mL of prepared CsBr-DMSO solution and 0.5mL of PbBr-DMSO solution into a 3mL open glass bottle, and uniformly mixing; placing the open glass bottle in a container with 5mL CH2Cl2In a 20ml glass bottle, closing the 20ml glass bottle, opening the interior of the container and filling with dichloromethane (CH)2Cl2) The inner parts of the closed containers are communicated, and then the closed containers are placed in an oven at 40 ℃ for reaction for 24 hours; after the reaction was completed, a 3ml open glass bottle was taken out, the crystals were taken out, and then the prepared 5ml mixed solution (C) was used3H8O DMSO volume ratio of 3:1) the crystals were washed twice to obtain zero-dimensional perovskites. The obtained zero-dimensional perovskite was redispersed in 5ml of a prepared mixed solution (C)3H8And (3) adding 0.02ml of deionized water into the mixture according to the volume ratio of O to DMSO being 3:1), stirring the mixture on a magnetic stirrer at the room temperature of 500r/min for 3min, centrifuging the mixture, and drying the mixture at the temperature of 40 ℃ for 2h to obtain the random laser scattering material. And storing the obtained random laser scattering material in an isopropanol solution, wherein the microstructure of the prepared random laser scattering material is as shown in the figure.
A laser device, structure and fabrication method are described in example 1, and the topographic structure is shown in FIG. 2 b.
Spontaneous amplified radiation was observed by using a pulsed laser (wavelength: 470nm, pulse width: 25ps, frequency: 10hz) to deenergize crystallites of different particle sizes in the laser device obtained by the method of the present invention; and, although the crystallite diameter is different, the crystallite diameter has uniformity of laser performance.
Example 3
A preparation method of a random laser scattering material based on zero-dimensional perovskite microcrystal phase transition comprises the following steps:
(1) CsBr was dissolved in 20ml of DMSO solution to prepare a CsBr-DMSO solution having a concentration of 0.2 mol/L.
(2) PbBr was dissolved in 20ml of DMSO solution to prepare a PbBr-DMSO solution at a concentration of 0.05 mol/L.
(3) Respectively adding 0.5mL of prepared CsBr-DMSO solution and 0.5mL of PbBr-DMSO solution into a 3mL open glass bottle, and uniformly mixing; placing the open glass bottle in a container with 5mL CH2Cl2In a 20ml glass bottle, closing the 20ml glass bottle, opening the interior of the container and filling with dichloromethane (CH)2Cl2) The inner parts of the closed containers are communicated, and then the closed containers are placed in an oven at 40 ℃ for reaction for 24 hours; after the reaction was completed, a 3ml open glass bottle was taken out, the crystals were taken out, and then the prepared 5ml mixed solution (C) was used3H8O DMSO volume ratio of 3:1) the crystals were washed twice to obtain zero-dimensional perovskites. The obtained zero-dimensional perovskite was redispersed in 5ml of a prepared mixed solution (C)3H8And (3) adding 0.03ml of deionized water into the mixture according to the volume ratio of O to DMSO being 3:1), stirring the mixture on a magnetic stirrer at the room temperature of 500r/min for 3min, centrifuging the mixture, and drying the mixture at the temperature of 40 ℃ for 2h to obtain the random laser scattering material. The resulting random laser scattering material was stored in isopropanol solution.
A laser device, structure and fabrication method are described in example 1, and the topographic structure is shown in FIG. 2 c.
Spontaneous amplified radiation was observed by using a pulsed laser (wavelength: 470nm, pulse width: 25ps, frequency: 10hz) to deenergize crystallites of different particle sizes in the laser device obtained by the method of the present invention; and, although the crystallite diameter is different, the crystallite diameter has uniformity of laser performance.
Example 4
A preparation method of a random laser scattering material based on zero-dimensional perovskite microcrystalline phase change comprises the following steps:
(1) CsBr was dissolved in 20ml of DMSO solution to prepare a 0.2mol/L CsBr-DMSO solution.
(2) PbBr was dissolved in 20ml of DMSO solution to prepare a PbBr-DMSO solution at a concentration of 0.05 mol/L.
(3) Respectively adding 0.5mL of prepared CsBr-DMSO solution and 0.5mL of PbBr-DMSO solution into a 3mL open glass bottle, and uniformly mixing; placing the open glass bottle in a container with 5mL CH2Cl2In a 20ml glass bottle, the 20ml glass bottle is closed, the inside of the container is opened, and methylene Chloride (CH) is filled in the container2Cl2) The inner parts of the closed containers are communicated, and then the closed containers are placed in an oven at 40 ℃ for reaction for 24 hours; after the reaction was completed, a 3ml open glass bottle was taken out, the crystals were taken out, and then the prepared 5ml mixed solution (C) was used3H8O DMSO volume ratio of 3:1) the crystals were washed twice to obtain zero-dimensional perovskites. The resulting zero-dimensional perovskite was redispersed in 5ml of the prepared mixed solution (C)3H8Adding 0.04ml of deionized water into the mixture according to the volume ratio of O to DMSO of 3:1), stirring the mixture on a magnetic stirrer at 500r/min for 3min at room temperature, centrifuging the mixture, and drying the mixture for 2h at 40 ℃ to obtain the random laser scattering material. The resulting random laser scattering material was stored in isopropanol solution.
A laser device, structure and fabrication method are described in example 1, and the topographic structure is shown in FIG. 2 d.
Spontaneous amplified radiation was observed by using a pulsed laser (wavelength: 470nm, pulse width: 25ps, frequency: 10hz) to deenergize crystallites of different particle sizes in the laser device obtained by the method of the present invention; and, although the crystallite diameter is different, the crystallite diameter has uniformity of laser performance.
Example 5
A preparation method of a random laser scattering material based on zero-dimensional perovskite microcrystal phase transition comprises the following steps:
(1) CsBr was dissolved in 20ml of DMSO solution to prepare a CsBr-DMSO solution having a concentration of 0.2 mol/L.
(2) PbBr was dissolved in 20ml of DMSO solution to prepare a PbBr-DMSO solution at a concentration of 0.05 mol/L.
(3) Respectively adding 0.5mL of prepared CsBr-DMSO solution and 0.5mL of PbBr-DMSO solution into a 3mL open glass bottle, and uniformly mixing; placing the open glass bottle in a container with 5mL CH2Cl2In a 20ml glass bottle, closing the 20ml glass bottle, opening the interior of the container and filling with dichloromethane (CH)2Cl2) The inner parts of the closed containers are communicated, and then the closed containers are placed in an oven at 40 ℃ for reaction for 24 hours; after the reaction was completed, a 3ml open glass bottle was taken out, the crystals were taken out, and then the prepared 5ml mixed solution (C) was used3H8O DMSO volume ratio of 3:1) the crystals were washed twice to obtain zero-dimensional perovskites. The obtained zero-dimensional perovskite was redispersed in 5ml of a prepared mixed solution (C)3H8And (3) adding 0.05ml of deionized water into the mixture according to the volume ratio of O to DMSO being 3:1), stirring the mixture on a magnetic stirrer at the room temperature of 500r/min for 3min, centrifuging the mixture, and drying the mixture at the temperature of 40 ℃ for 2h to obtain the random laser scattering material. The resulting random laser scattering material was stored in isopropanol solution.
A laser device, structure and fabrication method are described in example 1, and the topographic structure is shown in FIG. 2 e.
Spontaneous amplified radiation was observed by using a pulsed laser (wavelength: 470nm, pulse width: 25ps, frequency: 10hz) to deenergize crystallites of different particle sizes in the laser device obtained by the method of the present invention; and, although the crystallite diameter is different, the crystallite diameter has uniformity of laser performance.
Example 6
A preparation method of a random laser scattering material based on zero-dimensional perovskite microcrystal phase transition comprises the following steps:
(1) CsBr was dissolved in 20ml of DMSO solution to prepare a 0.2mol/L CsBr-DMSO solution.
(2) PbBr was dissolved in 20ml of DMSO solution to prepare a PbBr-DMSO solution at a concentration of 0.05 mol/L.
(3) Respectively adding 0.5mL of prepared CsBr-DMSO solution and 0.5mL of PbBr-DMSO solution into a 3mL open glass bottle, and uniformly mixing; placing the open glass bottle in a container with 5mL CH2Cl2In a 20ml glass bottle, closing the 20ml glass bottle, opening the interior of the container and filling with dichloromethane (CH)2Cl2) The inner parts of the closed containers are communicated, and then the closed containers are placed in an oven at 40 ℃ for reaction for 24 hours; after the reaction was completed, a 3ml open glass bottle was taken out, the crystals were taken out, and then the prepared 5ml mixed solution (C) was used3H8O DMSO volume ratio of 3:1) the crystals were washed twice to obtain zero-dimensional perovskites. The resulting zero-dimensional perovskite was redispersed in 5ml of the prepared mixed solution (C)3H8And (3) adding 0.06ml of deionized water into the mixture according to the volume ratio of O to DMSO being 3:1), stirring the mixture on a magnetic stirrer at the room temperature of 500r/min for 3min, centrifuging the mixture, and drying the mixture at the temperature of 40 ℃ for 2h to obtain the random laser scattering material. The resulting random laser scattering material was stored in isopropanol solution.
A laser device, structure and fabrication method are described in example 1, and the topographic structure is shown in FIG. 2 f.
Spontaneous amplified radiation was observed by using a pulsed laser (wavelength: 470nm, pulse width: 25ps, frequency: 10hz) to deenergize crystallites of different particle sizes in the laser device obtained by the method of the present invention; and, although the crystallite diameter is different, the crystallite diameter has uniformity of laser performance.
Comparative example 1
A method of making a laser material, as described in example 1, except that:
the step (3) is specifically as follows: respectively adding 1mL of prepared CsBr-DMSO solution and 0.5mL of PbBr-DMSO solution into a 3mL open glass bottle, and uniformly mixing; placing the open glass bottle in a container with 5mL CH2Cl2In a 20ml glass bottle, closing the 20ml glass bottle, opening the interior of the container and filling with dichloromethane (CH)2Cl2) The inner parts of the closed containers are communicated, and then the closed containers are placed in an oven at 40 ℃ for reaction for 24 hours; after the reaction is finished, taking outA 3ml open glass bottle, the crystals were removed and then the prepared 5ml of mixed solution (C) was used3H8O DMSO volume ratio of 3:1) the crystals were washed twice to obtain zero-dimensional perovskites. The resulting zero-dimensional perovskite was redispersed in 5ml of the prepared mixed solution (C)3H8Adding 0.01ml of deionized water into the mixture according to the volume ratio of O to DMSO of 3:1), stirring the mixture on a magnetic stirrer at 500r/min for 3min at room temperature, centrifuging the mixture, and drying the mixture for 2h at 40 ℃ to obtain the random laser scattering material. The resulting random laser scattering material was stored in isopropanol solution.
The other steps and conditions were identical to those of example 1.
XRD detection is carried out on the laser material obtained by the comparative example, and the obtained product contains a plurality of impurities, because the mixture ratio of the CsBr-DMSO solution and the PbBr-DMSO solution is not good.
Comparative example 2
A preparation method of a laser material comprises the following steps:
(1) CsBr was dissolved in 20ml of DMSO solution to prepare a CsBr-DMSO solution having a concentration of 0.2 mol/L.
(2) PbBr was dissolved in 20ml of DMSO solution to prepare a PbBr-DMSO solution at a concentration of 0.05 mol/L.
(3) Respectively adding 0.5mL of prepared CsBr-DMSO solution and 0.5mL of PbBr-DMSO solution into a 3mL open glass bottle, and uniformly mixing; placing the open glass bottle in a container with 5mL CH2Cl2In a 20ml glass bottle, closing the 20ml glass bottle, opening the interior of the container and filling with dichloromethane (CH)2Cl2) The inner parts of the closed containers are communicated, and then the closed containers are placed in an oven at 40 ℃ for reaction for 24 hours; after the reaction was completed, a 3ml open glass bottle was taken out, the crystals were taken out, and then the prepared 5ml mixed solution (C) was used3H8O DMSO volume ratio of 3:1) the crystals were washed twice to obtain zero-dimensional perovskites. Adding 0.05ml of deionized water, stirring for 3min at room temperature of 500r/min on a magnetic stirrer, centrifuging, and drying for 2h at 40 ℃ to obtain the laser scattering material. The resulting laser scattering material was stored in an isopropanol solution.
Since the mixed solution of isopropyl alcohol and dimethyl sulfoxide is not added in step (3) and the amount of deionized water added is excessive, the crystals are broken, as shown in fig. 8 a.
Comparative example 3
A method of making a laser material, as described in example 1, except that: in the step (3), the solution (C) is mixed3H8O to DMSO volume ratio of 3:1) was replaced with DMSO; the other steps and conditions were identical to those of example 1.
The laser material prepared in this comparative example had broken crystals, which were visually observed, and the resulting material was broken into powder.
Comparative example 4
A method of making a laser material, as described in example 1, except that: in the step (3), the solution (C) is mixed3H8Replacing the volume ratio of O to DMSO (3: 1) with a mixed solution (the volume ratio of isopropanol to n-hexane is 3: 1); the other steps and conditions were identical to those of example 1.
The surface porous morphology of the prepared random laser scattering material is not uniform, and the integral morphology of the microcrystal is irregular, as shown in fig. 8 b.
Test example 1
XRD tests were performed on the random laser scattering materials prepared in examples 1-6, and the results are shown in fig. 5b, which verifies that the components of the random laser scattering materials are 2D and 3D perovskites by comparison with a standard card, and verifies the components of the random laser scattering materials by high-power transmission electron microscopy characterization test of 4 b.
The XRD and TEM tests of 0D prepared by the preparation method of the comparative example, which are shown in fig. 4a and 5a, ensure that the prepared product is a pure phase 0D perovskite.

Claims (10)

1. Based on zero-dimensional perovskite (Cs)4PbBr6) The microcrystalline phase-change random laser scattering material is characterized in that the random laser scattering material comprises two-dimensional perovskite (2D CsPb)2Br5) And three-dimensional perovskites (3D CsPbBr)3) The microscopic morphology of the random laser scattering material is as follows; cubic porous microcrystals with the side length of 10-70 μm.
2. The preparation method of the random laser scattering material based on zero-dimensional perovskite microcrystalline phase change as claimed in claim 1, comprising the steps of:
(1) fully dissolving cesium bromide (CsBr) in dimethyl sulfoxide (DMSO) to obtain a cesium bromide (CsBr-DMSO) solution; fully dissolving lead bromide (PbBr) in dimethyl sulfoxide (DMSO) to obtain a lead bromide (PbBr-DMSO) solution;
(2) uniformly mixing a cesium bromide (CsBr-DMSO) solution and a lead bromide (PbBr-DMSO) solution to obtain a mixed solution, and placing the mixed solution in an open container; placing the open container containing the mixed solution in dichloromethane (CH)2Cl2) Then obtaining zero-dimensional perovskite crystals through reaction and washing in the closed container;
(3) dispersing the zero-dimensional perovskite crystal in isopropanol (C)3H8O) and dimethyl sulfoxide (DMSO), adding a conversion agent deionized water, reacting, centrifuging, and drying to obtain the random laser scattering material.
3. The preparation method of the random laser scattering material based on the zero-dimensional perovskite microcrystalline phase transition is characterized in that the step (1) comprises one or more of the following conditions:
i. the molar concentration of the cesium bromide solution is 0.1-0.5mol/L, and preferably 0.2 mol/L;
ii. The molar concentration of the lead bromide solution is 0.01-0.1mol/L, preferably 0.05 mol/L.
4. The preparation method of the random laser scattering material based on the zero-dimensional perovskite microcrystalline phase transition is characterized in that the step (2) comprises one or more of the following conditions:
i. the volume ratio of the cesium bromide solution to the lead bromide solution to the dichloromethane is 0.1-0.5:0.1-0.5:1-5, preferably 1:1: 10;
ii. The reaction temperature is 40-60 ℃, and preferably 40 ℃;
iii, the reaction time is 24-48h, preferably 24 h;
iv, in the step (2), washing is carried out by using a mixed solvent of isopropanol and dimethyl sulfoxide; in the mixed solvent, the volume ratio of the isopropanol to the dimethyl sulfoxide is 2-4: 1.
5. The method for preparing the random laser scattering material based on the zero-dimensional perovskite microcrystalline phase transition as claimed in claim 2, wherein the step (3) comprises one or more of the following conditions:
i. in the mixed solvent, the volume ratio of isopropanol to dimethyl sulfoxide is 2-4:1, preferably 3: 1;
ii. The volume ratio of the mole number of the cesium bromide in the step (1) to the mixed solvent in the step (3) is 0.5-1.5mol/L, and preferably 0.8 mol/L;
iii, the volume of the transforming agent deionized water is 0.1-1.5% of the volume of the mixed solvent, and preferably 0.2-1.2%.
6. The preparation method of the random laser scattering material based on the zero-dimensional perovskite microcrystalline phase transition is characterized in that the step (3) comprises one or more of the following conditions:
i. the reaction temperature is room temperature, and the reaction time is 1-5min, preferably 3 min; the reaction is carried out under the condition of stirring, and the stirring speed is 300-800 r/min;
ii. The drying temperature is 30-50 ℃, and the drying time is 0.5-5 h.
7. A laser device, characterized in that the structure of the laser device is: random laser scattering materials based on zero-dimensional perovskite microcrystal phase change are dispersed on the carrier.
8. The laser device according to claim 7, wherein the support is quartz glass.
9. A method of manufacturing a laser device as claimed in any of claims 7 to 8, comprising the steps of: uniformly dispersing the random laser scattering material based on the zero-dimensional perovskite microcrystal phase change in isopropanol, then coating the isopropanol on a carrier, and drying to obtain the material.
10. Use of the random laser scattering material based on zero-dimensional perovskite microcrystalline phase transition as claimed in any one of claims 1 to 6 as a gain medium or an optical resonator for a laser.
CN202210281543.XA 2022-03-21 2022-03-21 Random laser scattering material based on zero-dimensional perovskite microcrystalline phase change, laser device and preparation of random laser scattering material Pending CN114560495A (en)

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107418570A (en) * 2017-07-03 2017-12-01 苏州虹霞晶体科技有限公司 A kind of zero dimension perovskite structure high efficient luminous material and reversal temperature production method
US20190169498A1 (en) * 2016-08-26 2019-06-06 King Abdullah University Of Science And Technology Compositions and methods relating to luminescent structures
CN110699745A (en) * 2019-10-31 2020-01-17 东南大学 Preparation method of perovskite single crystal
US20200231611A1 (en) * 2019-01-21 2020-07-23 National Technology & Engineering Solutions Of Sandia, Llc Method to Synthesize Metal Halide Perovskite Particles with High Luminescence and Stability
US20200248070A1 (en) * 2019-01-31 2020-08-06 Lextar Electronics Corporation Perovskite luminescent nanocrystal, light emitting device, and manufacturing method for perovskite luminescent nanocrystal
CN111944525A (en) * 2020-08-25 2020-11-17 深圳大学 Zero-dimensional cesium-lead-bromine inorganic perovskite material and preparation method thereof
CN111960461A (en) * 2020-07-20 2020-11-20 齐鲁工业大学 Zero-dimensional perovskite Cs capable of regulating and controlling laser performance4PbBr6Micron crystal and preparation method thereof
CN113173596A (en) * 2021-04-26 2021-07-27 齐鲁工业大学 High-stability random laser scattering material based on three-dimensional perovskite nanocrystalline, laser device and preparation method of laser device
CN113462387A (en) * 2021-07-01 2021-10-01 齐鲁工业大学 Zero-dimensional perovskite nanocrystalline material with tunable light-emitting wavelength, preparation method thereof and light-emitting wavelength regulating method

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190169498A1 (en) * 2016-08-26 2019-06-06 King Abdullah University Of Science And Technology Compositions and methods relating to luminescent structures
CN107418570A (en) * 2017-07-03 2017-12-01 苏州虹霞晶体科技有限公司 A kind of zero dimension perovskite structure high efficient luminous material and reversal temperature production method
US20200231611A1 (en) * 2019-01-21 2020-07-23 National Technology & Engineering Solutions Of Sandia, Llc Method to Synthesize Metal Halide Perovskite Particles with High Luminescence and Stability
US20200248070A1 (en) * 2019-01-31 2020-08-06 Lextar Electronics Corporation Perovskite luminescent nanocrystal, light emitting device, and manufacturing method for perovskite luminescent nanocrystal
CN110699745A (en) * 2019-10-31 2020-01-17 东南大学 Preparation method of perovskite single crystal
CN111960461A (en) * 2020-07-20 2020-11-20 齐鲁工业大学 Zero-dimensional perovskite Cs capable of regulating and controlling laser performance4PbBr6Micron crystal and preparation method thereof
CN111944525A (en) * 2020-08-25 2020-11-17 深圳大学 Zero-dimensional cesium-lead-bromine inorganic perovskite material and preparation method thereof
CN113173596A (en) * 2021-04-26 2021-07-27 齐鲁工业大学 High-stability random laser scattering material based on three-dimensional perovskite nanocrystalline, laser device and preparation method of laser device
CN113462387A (en) * 2021-07-01 2021-10-01 齐鲁工业大学 Zero-dimensional perovskite nanocrystalline material with tunable light-emitting wavelength, preparation method thereof and light-emitting wavelength regulating method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
XUN SUN等: "Lasing from zero-dimensional perovskite and optical imaging applications", ACS PHOTONICS *

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