CN114559369A - Spacing bonding mould of infrared detector back of body attenuate - Google Patents
Spacing bonding mould of infrared detector back of body attenuate Download PDFInfo
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- CN114559369A CN114559369A CN202210123248.1A CN202210123248A CN114559369A CN 114559369 A CN114559369 A CN 114559369A CN 202210123248 A CN202210123248 A CN 202210123248A CN 114559369 A CN114559369 A CN 114559369A
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- layer
- limiting
- infrared detector
- diameter
- bonding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/068—Table-like supports for panels, sheets or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
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Abstract
The invention discloses a limiting bonding die for back thinning of an infrared detector, which comprises a limiting layer and a heat conducting layer; the heat conducting layer is of a circular truncated cone structure, a target pattern is arranged on the upper surface of the circular truncated cone structure, and the diameter of the protruding part of the circular truncated cone structure is matched with the inner diameter of the limiting layer; the limiting layer is sleeved on the circular truncated cone structure of the heat conducting layer, the outer diameter of the limiting layer is matched with the diameter of the bottom of the heat conducting layer, a groove structure is formed between the limiting layer and the upper surface of the circular truncated cone structure, and the depth of the groove structure is smaller than the thickness of the light transmitting plate placed in the groove structure; the diameter of the light-transmitting plate is matched with the groove structure, and the light-transmitting plate is used for providing bonding positions for the infrared detector chip based on the target pattern. The limiting bonding die of the embodiment is simple in raw materials and convenient to manufacture, can flexibly replace the heat conduction layer according to a required arrangement mode, and is wide in application range, high in stability, reusable and low in cost.
Description
Technical Field
The invention relates to the technical field of infrared detectors, in particular to a limiting bonding die for back thinning of an infrared detector.
Background
The infrared focal plane detector is a core part of an infrared system, has the remarkable advantages of high sensitivity, wide spectral response wave band, strong anti-interference capability and the like, and is widely applied to the fields of space remote sensing, industry and agriculture, astronomical detection and the like.
The infrared detector adopts a hybrid structure and generally consists of a photosensitive element chip, a silicon reading circuit and an indium column array positioned between the photosensitive element chip and the silicon reading circuit. In order to improve the reliability of the indium columns, underfill is usually filled between the chip and the readout circuit, and temperature-raising curing is performed. The detector chip with the structure irradiates the photosensitive element in a back incidence mode, so that the back of the detector chip needs to be thinned by utilizing a grinding and polishing technology, and the back transmittance of the back-illuminated infrared detector is improved so as to improve the quantum efficiency. The repeated stability of the infrared focal plane detector back thinning technology is related to core elements such as device performance, responsivity, reliability and the like.
At present, the bonding process of the back thinning technology generally uses materials of the same chip type as the accompanying sheet, the accompanying sheet is cut into a proper specification, the matching is carried out according to the thickness and the specification of a detector, wax is bonded on the same glass plate for protection, and the requirements of fixing and unifying the number and the positions of the bonding are not met. The method has the problem that the bonding position cannot be accurately controlled, so that the problem of uneven chip thickness in the later grinding and polishing process can be caused, and even the performance of a device can be influenced.
Disclosure of Invention
The embodiment of the invention provides a limiting bonding die for back thinning of an infrared detector, which is used for solving the problems of poor surface flatness and flatness, poor polishing effect and low yield caused by the fact that the position cannot be accurately controlled during bonding of an infrared detector chip.
The embodiment of the application provides a limiting bonding die for back thinning of an infrared detector, which comprises a limiting layer and a heat conducting layer;
the heat conducting layer is of a circular truncated cone structure, a target pattern is arranged on the upper surface of the circular truncated cone structure, and the diameter of the protruding portion of the circular truncated cone structure is matched with the inner diameter of the limiting layer;
the limiting layer is sleeved on the circular truncated cone structure of the heat conducting layer, the outer diameter of the limiting layer is matched with the diameter of the bottom of the heat conducting layer, a groove structure is formed between the limiting layer and the upper surface of the circular truncated cone structure, and the depth of the groove structure is smaller than the thickness of the light transmitting plate embedded in the groove structure;
the diameter of the light-transmitting plate is matched with the groove structure, and the light-transmitting plate is used for providing bonding positions for the infrared detector chip based on the target pattern.
In some embodiments, the stopper layer has an inner diameter dimension that is 0.1mm to 0.2mm greater than the diameter of the glass sheet and an outer diameter dimension that is 1mm to 1.5mm greater than the inner diameter dimension.
In some embodiments, the diameter of the bottom of the heat conducting layer is the same as the outer diameter of the stopper layer.
In some embodiments, the limiting layer is made of glass, a gem sheet, ceramic or acrylic material.
In some embodiments, the light-transmissive plate is made of a glass material.
In some embodiments, the heat conducting layer is made of copper, aluminum or aluminum alloy material.
In some embodiments, the target pattern is determined according to the light-transmitting plate, the bonding quantity of the infrared detector chip and the bonding mode.
According to the embodiment of the invention, the heat conduction layer and the limiting layer are sleeved to form the groove structure, and the target pattern is arranged on the upper surface of the circular truncated cone structure, so that the infrared detector chip can be installed according to the target pattern through the light transmission plate with the groove structure.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
Various additional advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 is a schematic sectional structure view of a limiting bonding die of the present disclosure;
fig. 2 is a schematic top view of a heat conduction layer of the limiting bonding mold according to the present disclosure;
fig. 3 is a schematic view of a top view structure of a limiting layer of the limiting bonding mold of the present disclosure.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The embodiment of the invention provides a limiting bonding die for back thinning of an infrared detector, which comprises a limiting layer 1 and a heat conducting layer 2 as shown in fig. 1, fig. 2 and fig. 3.
The heat conducting layer 1 is of a circular truncated cone structure, a target pattern is arranged on the upper surface of the circular truncated cone structure, and the diameter of the protruding portion 11 of the circular truncated cone structure is matched with the inner diameter of the limiting layer 2. Namely, the limiting layer 2 can be sleeved on the convex part 11 of the circular truncated cone structure.
The limiting layer 2 is sleeved on the round platform structure of the heat conducting layer, the outer diameter of the limiting layer 2 is matched with the diameter of the bottom of the heat conducting layer 1, the limiting layer 2 is matched with the groove structure 21 formed between the upper surface of the round platform structure, and the depth of the groove structure 21 is smaller than the thickness of the light-transmitting plate 3 placed in the groove structure. That is, the total height of the nesting part of the heat conduction layer 1 and the limiting layer 2 and the thickness of the light-transmitting plate 3 arranged above the heat conduction layer 1 are larger than the height of the limiting layer 2, so that the light-transmitting plate 3 can protrude out of the groove structure 21.
The diameter of the light-transmitting plate 3 is matched with the groove structure 21, and the light-transmitting plate 3 is used for providing bonding positions for the infrared detector chip based on the target pattern.
In some embodiments, the target pattern is determined according to the light-transmitting plate, the bonding quantity of the infrared detector chip and the bonding mode. For example, the patterns of the contact surface of the protruding part 11 of the circular truncated cone structure and the light-transmitting plate can be formed by laser on the plane of the protruding part according to the bonding number of the light-transmitting plate and the infrared detector chips and the bonding mode, so that the bonding position of the infrared detector chips can be determined through the light-transmitting plate, and a good limiting effect can be achieved through the limiting layer.
In some embodiments, the stopper layer has an inner diameter dimension that is 0.1mm to 0.2mm greater than the diameter of the glass sheet and an outer diameter dimension that is 1mm to 1.5mm greater than the inner diameter dimension. In some embodiments, the diameter of the bottom of the heat conducting layer is the same as the outer diameter of the stopper layer. In some embodiments, the limiting layer is made of glass, a gem sheet, ceramic or acrylic material. In some embodiments, the light-transmissive plate is made of a glass material. In some embodiments, the heat conducting layer is made of copper, aluminum or aluminum alloy material.
As a specific application example, the implementation also provides a limiting bonding mold for back thinning of an infrared detector, which is applied to a scene of back thinning bonding of an InSb infrared focal plane device of a 128 × 128 photosensitive element array. The heat-conducting layer comprises a limiting layer and a heat-conducting layer which are mutually nested. The top of the heat conduction layer is in direct contact with the bottom of the glass plate, the diameter of the top of the heat conduction layer is consistent with that of the glass plate, and the heat conduction layer is made of aluminum alloy. The spacing layer is the cylinder through-hole, and its inside diameter size is 0.1mm bigger than the glass board to guarantee that the glass board can imbed the spacing layer, its outside diameter size is 1mm bigger than the inside diameter size, and the material that the preparation spacing layer used is ya keli.
The bottom diameter of the heat conduction layer and the outer diameter of the limiting layer are consistent in size in the example; the total height of the nesting part of the heat conduction layer and the limiting layer and the thickness of the glass plate arranged above the heat conduction layer are larger than the height of the limiting layer; according to the bonding quantity and the bonding mode of the glass plate and the infrared detector chips, correspondingly, patterns of the contact surface of the heat conduction layer and the glass plate are designed and marked out by laser, and the infrared detector is bonded on the glass plate in an alignment mode according to the patterns of the heat conduction layer.
As another specific application example, the method is applied to the condition of back thinning and bonding of the HgCdTe infrared focal plane device of a 320 multiplied by 256 photosensitive element array. Including spacing layer and heat-conducting layer two parts, both are nested each other, and the top direct contact glass board bottom of heat-conducting layer, heat-conducting layer top diameter keep unanimous with the glass board diameter, and the material that the heat-conducting layer used is the aluminum alloy. The limiting layer is a cylindrical through hole, the inner diameter of the limiting layer is 0.2mm larger than that of the glass plate so as to ensure that the glass plate can be embedded into the limiting layer, the outer diameter of the limiting layer is 1.5mm larger than that of the glass plate, and the limiting layer is made of ceramic; the diameter of the bottom of the heat conduction layer is consistent with the size of the outer diameter of the limiting layer.
The total height of the nesting part of the heat conduction layer and the limiting layer and the thickness of the glass plate arranged above the heat conduction layer are larger than the height of the limiting layer; according to the bonding quantity and the bonding mode of the glass plate and the infrared detector chips, correspondingly, patterns of the contact surface of the heat conduction layer and the glass plate are designed and marked out by laser, and the infrared detector is bonded on the glass plate in an alignment mode according to the patterns of the heat conduction layer.
As a specific application example, the method is applied to the situation of back thinning bonding of the InSb infrared focal plane device of the 1k × 1k photosensitive element array. Including spacing layer and heat-conducting layer two parts, both are nested each other, and the top direct contact glass board bottom of heat-conducting layer, heat-conducting layer top diameter keep unanimous with the glass board diameter, and the material that the heat-conducting layer used is the aluminum alloy. The spacing layer is the cylinder through-hole, and its inside diameter size is 0.2mm bigger than the glass board to guarantee that the glass board can imbed the spacing layer, its outside diameter size is 1mm bigger than the inside diameter size, and the material that preparation spacing layer used is the precious stone piece. The diameter of the bottom of the heat conduction layer is consistent with the size of the outer diameter of the limiting layer. The total height of the heat conduction layer and the limit layer nesting part and the thickness of the glass plate arranged above the heat conduction layer are combined to be larger than the height of the limit layer.
According to the bonding quantity and the bonding mode of the glass plate and the infrared detector chips, correspondingly, patterns of the contact surface of the heat conduction layer and the glass plate are designed and marked out by laser, and the infrared detector is bonded on the glass plate in an alignment mode according to the patterns of the heat conduction layer.
According to the embodiment of the invention, the heat conduction layer and the limiting layer are sleeved to form the groove structure, and the target pattern is arranged on the upper surface of the circular truncated cone structure, so that the infrared detector chip can be installed according to the target pattern through the light transmission plate with the groove structure.
It is to be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element identified by the phrase "comprising an … …" does not exclude the presence of other identical elements in the process, method, article, or apparatus that comprises the element.
The above-mentioned serial numbers of the embodiments of the present invention are only for description, and do not represent the advantages and disadvantages of the embodiments.
While the present invention has been described with reference to the particular illustrative embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but is intended to cover various modifications, equivalent arrangements, and equivalents thereof, which may be made by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (7)
1. A limiting bonding die for back thinning of an infrared detector is characterized by comprising a limiting layer and a heat conducting layer;
the heat conducting layer is of a circular truncated cone structure, a target pattern is arranged on the upper surface of the circular truncated cone structure, and the diameter of the protruding portion of the circular truncated cone structure is matched with the inner diameter of the limiting layer;
the limiting layer is sleeved on the circular truncated cone structure of the heat conducting layer, the outer diameter of the limiting layer is matched with the diameter of the bottom of the heat conducting layer, a groove structure is formed between the limiting layer and the upper surface of the circular truncated cone structure, and the depth of the groove structure is smaller than the thickness of the light transmitting plate embedded in the groove structure;
The diameter of the light-transmitting plate is matched with the groove structure, and the light-transmitting plate is used for providing bonding positions for the infrared detector chip based on the target pattern.
2. The die for limiting bonding of back thinning of infrared detector of claim 1, wherein the inner diameter dimension of the limiting layer is 0.1mm to 0.2mm larger than the diameter of the glass plate, and the outer diameter dimension thereof is 1mm to 1.5mm larger than the inner diameter dimension thereof.
3. The die for limiting bonding of back thinning of an infrared detector as set forth in claim 1, wherein a diameter of a bottom of said heat conductive layer is the same as an outer diameter of said limiting layer.
4. The back-thinned limit bonding die for the infrared detector of claim 1, wherein the limit layer is made of glass, a gem piece, ceramic or acrylic material.
5. The back-thinned limit bonding die for the infrared detector of claim 1, wherein the light-transmitting plate is made of a glass material.
6. The back-thinning limit bonding die for the infrared detector as claimed in claim 1, wherein the heat conducting layer is made of copper, aluminum or aluminum alloy material.
7. The back-thinned limit bonding die for the infrared detector of claim 1, wherein the target pattern is determined according to the light-transmitting plate, the bonding number of the infrared detector chips and the bonding mode.
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| CN202210123248.1A CN114559369B (en) | 2022-02-10 | 2022-02-10 | Limiting bonding die for back thinning of infrared detector |
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| CN202210123248.1A CN114559369B (en) | 2022-02-10 | 2022-02-10 | Limiting bonding die for back thinning of infrared detector |
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| CN114559369A true CN114559369A (en) | 2022-05-31 |
| CN114559369B CN114559369B (en) | 2023-06-23 |
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Cited By (1)
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| CN115078431A (en) * | 2022-06-16 | 2022-09-20 | 中国核动力研究设计院 | Preparation method of transmission electron microscope sample based on zirconium alloy after self-ion irradiation |
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| CN114559369B (en) | 2023-06-23 |
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