CN114551717B - Perovskite alkaline earth vanadate thin film ferroelectric heterostructure and preparation method thereof - Google Patents
Perovskite alkaline earth vanadate thin film ferroelectric heterostructure and preparation method thereof Download PDFInfo
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- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 239000010409 thin film Substances 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000013078 crystal Substances 0.000 claims abstract description 29
- 230000005684 electric field Effects 0.000 claims abstract description 26
- 230000000694 effects Effects 0.000 claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 19
- 230000008021 deposition Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000000919 ceramic Substances 0.000 claims abstract description 9
- 239000013077 target material Substances 0.000 claims abstract description 7
- 238000005516 engineering process Methods 0.000 claims abstract description 6
- 229910003114 SrVO Inorganic materials 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 230000001276 controlling effect Effects 0.000 claims description 10
- 230000001105 regulatory effect Effects 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 238000004549 pulsed laser deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 abstract description 3
- 230000008859 change Effects 0.000 description 12
- 239000012212 insulator Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 238000011160 research Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- -1 Helium ions Chemical class 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/30—Three-dimensional structures
- C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
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- Chemical & Material Sciences (AREA)
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- Crystallography & Structural Chemistry (AREA)
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Abstract
The invention discloses a perovskite type alkaline earth vanadate thin film ferroelectric heterostructure and a preparation method thereof, wherein the heterostructure comprises a ferroelectric single crystal substrate and a perovskite type alkaline earth vanadate thin film epitaxially grown on the substrate; the preparation method comprises the following steps: step 1: selecting perovskite type alkaline earth vanadate ceramic blocks as target materials; step 2: depositing an epitaxial perovskite type alkaline earth vanadate film on the ferroelectric monocrystal substrate by adopting a pulse laser deposition technology. According to the invention, the alkaline earth vanadate film is epitaxially grown on the ferroelectric single crystal substrate, the ferroelectric single crystal substrate generates a reverse piezoelectric effect by controlling the intensity of a direct current electric field applied longitudinally, and in-plane internal pressure strain is introduced, so that the regulation and control of the alkaline earth vanadate film resistance are realized, the electrostrictive effect is presented, and the method has important guiding significance for the application of related metal materials in a new generation of low-power consumption nonvolatile electronic devices with adjustable electric fields.
Description
Technical Field
The invention relates to the technical field of electronic elements, in particular to a perovskite alkaline earth vanadate thin film ferroelectric heterostructure and a preparation method thereof.
Background
Strongly associated electron oxides exhibit a number of interesting physical phenomena such as superconductivity, multiferroics, metal-insulator transitions, topologically anomalous hall effects, piezospintronics, etc., due to the close interactions between the physical degrees of freedom (e.g., lattice, spin, charge). Among these oxides, perovskite type alkaline earth vanadate AVO 3 (a=ca, sr, ba) can be used as an electrode material and a transparent conductor due to the singular physical properties of strong electron correlation, mott transformation, high conductivity, high optical transparency, and the like, has a wide application prospect, and excites research interests of researchers.
Currently, electron transport and metal-insulator transition are regulated mainly by reduced dimension and strain engineering. For example, yoshimatsu [ k.yoshimatsu, et al, phys.rev. Lett.104,147601 (2010) ] and Gu c. [ m.gu, et al, adv.mater. Interfaces 1,1300126 (2014) ] et al are srvos of less than 2 and 17 monolayers thick, respectively 3 A Mott insulating state was found in the ultrathin film driven by dimensional crossover. Mirjoet et al [ M.Mirjoet, et al, adv. Sci.8,2004207 (2021) ] found in SrTiO 3 70nm thick SrV stretched in-plane on substrateO 3 The films have high electrical resistivity of 150 to 210m stretch, mainly due to planar defects caused by large stretch mismatch. In particular, wang et al [ C.Wang et al, phys.Rev.materials 3,115001 (2019) ] SrVO at a thickness of 50nm 3 Helium ions are implanted into the film to induce strain doping to independently increase the out-of-plane lattice constant and observe the occurrence of metal-insulator transitions. It is noted that in addition to heteroepitaxial strain and strain doping, oxygen defects are easily introduced in the thin film during deposition and the resulting disorder can drive the original metallic state to an insulating state [ g.wang, et al, phys.rev.b 100,155114 (2019) ]. To obtain the effect of intrinsic lattice strain on electrical properties, xu et al [ R.xu, et al, ACS appl. Mater. Interfaces 12,16462-16468 (2020) ] epitaxially grow SrVO on a flexible mica substrate 3 The film, which is subjected to in-plane uniaxial strain in situ by mechanical bending, was found to increase in film resistivity under either compressive or tensile strain. Biaxial strain produces greater lattice-sensitive physical parameter tuning than uniaxial strain and can be experimentally dynamically introduced into the functional thin film in situ by applying an electric field to the underlying ferroelectric substrate. Strain engineering (including bending-induced uniaxial strain and electric-field-induced biaxial strain) has proven to be a very promising strategy for manipulating ordered parameters of thin film materials, which opens up an emerging field of research known as "strain electronics". Although efforts have been made to regulate the physical properties of alkaline earth vanadate films by epitaxial strain, strain doping and uniaxial strain, the regulation of electric transport by biaxial strain induced by electric fields is still freshly reported and the origin of the motet transition is controversial.
Therefore, the system researches the influence of the inverse piezoelectric effect of the electrically triggered ferroelectric single crystal substrate on lattice distortion, resistivity and metal-insulator transition of the alkaline earth vanadate thin film, realizes the linear electrostrictive effect, is beneficial to revealing the physical of strain electronics and designing a low-power-consumption strain tunable electronic device.
Disclosure of Invention
1. Technical problem to be solved
The invention aims to solve the problems of regulating and controlling electron transmission and metal-insulator transformation mainly through dimension reduction and strain engineering in the prior art, and provides a perovskite type alkaline earth vanadate thin film ferroelectric heterostructure and a preparation method thereof.
2. Technical proposal
In order to achieve the above purpose, the present invention adopts the following technical scheme:
a perovskite type alkaline earth vanadate thin film ferroelectric heterostructure comprising a ferroelectric single crystal substrate and a perovskite type alkaline earth vanadate thin film epitaxially grown on the substrate.
Preferably, the ferroelectric single crystal substrate comprises any one of PMN-PT, PIN-PMN-PT, PZN-PT.
Preferably, the perovskite alkaline earth vanadate comprises CaVO 3 、SrVO 3 、BaVO 3 Any one of them.
Preferably, the perovskite alkaline earth vanadate film exhibits associated metal properties.
Preferably, the thickness of the perovskite type alkaline earth vanadate film is 20-300nm.
Preferably, the heterostructure further comprises a metal electrode plated on the surface of the perovskite alkaline earth vanadate thin film and the back surface of the ferroelectric single crystal substrate, and the metal electrode comprises any one of gold, silver, platinum and titanium.
The invention also provides a preparation method of the perovskite alkaline earth vanadate thin film ferroelectric heterostructure, which comprises the following steps:
step 1: selecting perovskite type alkaline earth vanadate ceramic blocks as target materials;
step 2: and then depositing an epitaxial perovskite type alkaline earth vanadate film on the ferroelectric single crystal substrate by adopting a pulse laser deposition technology.
Preferably, the alkaline earth vanadate ceramic block target used has the chemical formula A 2 V 2 O 7 (a=ca, sr, ba) with a purity of greater than 99.99%.
Preferably, the process parameters of the pulsed laser deposition include: wave using XeCl excimer laserA length lambda=308 nm, a laser energy density of 1-5J/cm 2 The distance between the substrate and the target is 4-8cm, the deposition temperature is 600-920 ℃, and the back vacuum degree is less than 10 -6 Torr, deposition time is 10-90min.
The invention also provides an application method of the perovskite alkaline earth vanadate thin film ferroelectric heterostructure, which is characterized in that a longitudinal direct current bias electric field is applied to a ferroelectric single crystal substrate to generate an inverse piezoelectric effect, linearly increased in-plane internal pressure strain is introduced into the substrate and is transferred to a thin film, and the resistance of the thin film is linearly reduced, so that the linear electro-resistance effect is realized in an epitaxial thin film, and the change amplitude and the non-volatility of the resistance can be regulated by precisely controlling the polarity and the magnitude of the bias electric field.
3. Advantageous effects
Compared with the prior art, the invention has the advantages that:
(1) In the invention, through integrating alkaline earth vanadate thin films on the ferroelectric monocrystal substrates in an epitaxial way, the ferroelectric monocrystal substrates are expected to generate inverse piezoelectric effect and introduce in-plane compressive strain by controlling the intensity of a direct current electric field applied longitudinally, so that the alkaline earth vanadate thin film resistor is regulated and controlled, and the electrostrictive effect is presented.
(2) In the invention, the change amplitude of the resistance and the non-volatility thereof can be regulated by precisely controlling the polarity and the size of the bias electric field, which has important guiding significance for the application of the related metal materials in the new generation of low-power consumption non-volatile electronic devices with adjustable electric fields.
Drawings
FIG. 1 is a schematic diagram showing a resistance change test of an electric field induced perovskite type alkaline earth vanadate thin film ferroelectric heterostructure in the invention;
FIG. 2 shows SrVO in the present invention 3 XRD theta-2 theta scanning pattern of PMN-PT heterostructure, and the inset is SrVO 3 (110) And XRD phi scan patterns of PMN-PT (110) diffraction peaks;
FIG. 3 shows SrVO when T=296K in the present invention 3 Linear change curve of relative change rate (Δr/R) of sheet resistance with electric field.
Detailed Description
The following description of the technical solutions in the embodiments of the present invention will be clear and complete, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments.
Example 1:
referring to fig. 1, a perovskite type alkaline earth vanadate thin film ferroelectric heterostructure comprising a ferroelectric single crystal substrate and a perovskite type alkaline earth vanadate thin film epitaxially grown on the substrate.
The preparation method of the perovskite alkaline earth vanadate thin film ferroelectric heterostructure comprises the following steps of:
step 1: selecting perovskite type alkaline earth vanadate ceramic blocks as target materials;
step 2: and then depositing an epitaxial perovskite type alkaline earth vanadate film on the ferroelectric single crystal substrate by adopting a pulse laser deposition technology.
The invention relates to an application method of a perovskite type alkaline earth vanadate thin film ferroelectric heterostructure, which is characterized in that a longitudinal direct current bias electric field is applied to a ferroelectric single crystal substrate to generate an inverse piezoelectric effect, linear increased in-plane internal pressure strain is introduced into the substrate and is transferred to a thin film, and the resistance of the thin film is linearly reduced, so that the linear electro-resistance effect is realized in an epitaxial thin film, and the change amplitude and the non-volatility of the resistance can be regulated by precisely controlling the polarity and the magnitude of the bias electric field.
In the present invention, referring to fig. 1 to 3, when t=296K, it can be seen that SrVO increases with the electric field 3 The relative rate of change of sheet resistance (ΔR/R) increases gradually.
Example 2:
a perovskite type alkaline earth vanadate thin film ferroelectric heterostructure comprises a ferroelectric single crystal substrate and a perovskite type alkaline earth vanadate thin film epitaxially grown on the substrate.
In the present invention, the ferroelectric single crystal substrate contains any one of PMN-PT, PIN-PMN-PT, PZN-PT, and the perovskite alkaline earth vanadate contains CaVO 3 、SrVO 3 、BaVO 3 Any one of the perovskite type alkaline earth vanadate thin films shows associated metal characteristics, perovskite typeThe thickness of the alkaline earth vanadate film is 20-300nm.
In the invention, the heterostructure also comprises a metal electrode plated on the surface of the perovskite alkaline earth vanadate film and the back surface of the ferroelectric single crystal substrate, and the metal electrode comprises any one of gold, silver, platinum and titanium.
The preparation method of the perovskite alkaline earth vanadate thin film ferroelectric heterostructure comprises the following steps of:
step 1: selecting perovskite type alkaline earth vanadate ceramic blocks as target materials;
step 2: and then depositing an epitaxial perovskite type alkaline earth vanadate film on the ferroelectric single crystal substrate by adopting a pulse laser deposition technology.
The invention relates to an application method of a perovskite type alkaline earth vanadate thin film ferroelectric heterostructure, which is characterized in that a longitudinal direct current bias electric field is applied to a ferroelectric single crystal substrate to generate an inverse piezoelectric effect, linear increased in-plane internal pressure strain is introduced into the substrate and is transferred to a thin film, and the resistance of the thin film is linearly reduced, so that the linear electro-resistance effect is realized in an epitaxial thin film, and the change amplitude and the non-volatility of the resistance can be regulated by precisely controlling the polarity and the magnitude of the bias electric field.
In the present invention, referring to fig. 1 to 3, when t=296K, it can be seen that SrVO increases with the electric field 3 The relative rate of change of sheet resistance (ΔR/R) increases gradually.
Example 3:
a perovskite type alkaline earth vanadate thin film ferroelectric heterostructure comprises a ferroelectric single crystal substrate and a perovskite type alkaline earth vanadate thin film epitaxially grown on the substrate.
In the present invention, the ferroelectric single crystal substrate contains any one of PMN-PT, PIN-PMN-PT, PZN-PT, and the perovskite alkaline earth vanadate contains CaVO 3 、SrVO 3 、BaVO 3 Any one of the perovskite type alkaline earth vanadate thin films shows relevant metal characteristics, and the thickness of the perovskite type alkaline earth vanadate thin film is 20-300nm.
In the invention, the heterostructure also comprises a metal electrode plated on the surface of the perovskite alkaline earth vanadate film and the back surface of the ferroelectric single crystal substrate, and the metal electrode comprises any one of gold, silver, platinum and titanium.
The preparation method of the perovskite alkaline earth vanadate thin film ferroelectric heterostructure comprises the following steps of:
step 1: selecting perovskite type alkaline earth vanadate ceramic blocks as target materials;
step 2: and then depositing an epitaxial perovskite type alkaline earth vanadate film on the ferroelectric single crystal substrate by adopting a pulse laser deposition technology.
In the invention, the chemical general formula of the alkaline earth vanadate ceramic block target material is A 2 V 2 O 7 (a=ca, sr, ba) with a purity of greater than 99.99%, the process parameters of pulsed laser deposition include: using XeCl excimer laser, wavelength λ=308 nm, laser energy density 1-5J/cm 2 The distance between the substrate and the target is 4-8cm, the deposition temperature is 600-920 ℃, and the back vacuum degree is less than 10 -6 Torr, deposition time is 10-90min.
The invention relates to an application method of a perovskite type alkaline earth vanadate thin film ferroelectric heterostructure, which is characterized in that a longitudinal direct current bias electric field is applied to a ferroelectric single crystal substrate to generate an inverse piezoelectric effect, linear increased in-plane internal pressure strain is introduced into the substrate and is transferred to a thin film, and the resistance of the thin film is linearly reduced, so that the linear electro-resistance effect is realized in an epitaxial thin film, and the change amplitude and the non-volatility of the resistance can be regulated by precisely controlling the polarity and the magnitude of the bias electric field.
In the present invention, referring to fig. 1 to 3, when t=296K, it can be seen that SrVO increases with the electric field 3 The relative rate of change of sheet resistance (ΔR/R) increases gradually.
In the invention, alkaline earth vanadate thin films are epitaxially grown on the ferroelectric single crystal substrates, so that the ferroelectric single crystal substrates are expected to induce inverse piezoelectric effect and compressive strain by controlling the intensity of a direct current electric field applied longitudinally, thereby realizing the regulation and control of the alkaline earth vanadate thin film resistance and presenting the electrostrictive effect.
In the invention, the change amplitude of the resistance and the non-volatility thereof can be regulated by precisely controlling the polarity and the size of the bias electric field, which has important guiding significance for the application of the related metal materials in the new generation of low-power consumption non-volatile electronic devices with adjustable electric fields.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should make equivalent substitutions or modifications according to the technical scheme of the present invention and the inventive concept thereof, and should be covered by the scope of the present invention.
Claims (5)
1. A perovskite type alkaline earth vanadate thin film ferroelectric heterostructure, characterized in that the heterostructure comprises a ferroelectric single crystal substrate and a perovskite type alkaline earth vanadate thin film epitaxially grown on the substrate, the ferroelectric single crystal substrate comprises any one of PMN-PT, PIN-PMN-PT and PZN-PT, and the perovskite type alkaline earth vanadate comprises CaVO 3 、SrVO 3 、BaVO 3 Any one of the perovskite type alkaline earth vanadate thin films has the thickness of 20-300nm; by applying a longitudinal direct-current bias electric field to the ferroelectric single crystal substrate, an inverse piezoelectric effect is generated, linearly increased in-plane compressive strain is introduced into the substrate and transferred to the thin film, and the resistance of the thin film is linearly reduced, so that a linear electrostrictive effect is realized in the epitaxial thin film, and the variation amplitude of the resistance and the non-volatility thereof can be regulated by precisely controlling the polarity and the magnitude of the bias electric field.
2. The perovskite alkaline earth vanadate thin film ferroelectric heterostructure according to claim 1, further comprising a metal electrode plated on a surface of the perovskite alkaline earth vanadate thin film and a back side of the ferroelectric single crystal substrate, the metal electrode comprising any one of gold, silver, platinum, and titanium.
3. The method for preparing a perovskite alkaline earth vanadate thin film ferroelectric heterostructure according to any one of claims 1 to 2, comprising the steps of:
step 1: selecting perovskite type alkaline earth vanadate ceramic blocks as target materials;
step 2: and then depositing an epitaxial perovskite type alkaline earth vanadate film on the ferroelectric single crystal substrate by adopting a pulse laser deposition technology.
4. The method for preparing a perovskite type alkaline earth vanadate thin film ferroelectric heterostructure according to claim 3, wherein the chemical formula of the alkaline earth vanadate ceramic block target used is A 2 V 2 O 7 (a=ca, sr, ba) with a purity of greater than 99.99%.
5. A method of preparing a perovskite type alkaline earth vanadate thin film ferroelectric heterostructure according to claim 3, wherein the process parameters of the pulsed laser deposition include: and a XeCl excimer laser is used, the wavelength lambda=308 nm, the laser energy density is 1-5J/cm < 2 >, the distance between the substrate and the target is 4-8cm, the deposition temperature is 600-920 ℃, the back vacuum degree is less than 10-6Torr, and the deposition time is 10-90min.
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| CN104451543A (en) * | 2014-11-05 | 2015-03-25 | 天津大学 | Vanadium ferrite-bismuth ferrite multiferroic composite film with exchange bias effect and preparation method of composite film |
| WO2018090926A1 (en) * | 2016-11-15 | 2018-05-24 | 汉能联创移动能源投资有限公司 | Transparent conductive film and preparation method therefor, sputtering target, transparent conductive substrate and solar cell |
| CN112320845A (en) * | 2020-11-02 | 2021-02-05 | 四川大学 | Perovskite structure vanadate-based battery negative electrode active material |
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| US20020153524A1 (en) * | 2001-04-19 | 2002-10-24 | Motorola Inc. | Structure and method for fabricating semiconductor structures and devices utilizing perovskite stacks |
| KR102099970B1 (en) * | 2013-11-01 | 2020-04-10 | 삼성전자주식회사 | Transparent conductive thin film |
| US10311992B2 (en) * | 2014-08-01 | 2019-06-04 | The Penn State Research Foundation | Transparent conducting films including complex oxides |
| US20210069999A1 (en) * | 2019-09-11 | 2021-03-11 | Wisconsin Alumni Research Foundation | Seeded solid-phase crystallization of transparent conducting vanadate perovskites |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104451543A (en) * | 2014-11-05 | 2015-03-25 | 天津大学 | Vanadium ferrite-bismuth ferrite multiferroic composite film with exchange bias effect and preparation method of composite film |
| WO2018090926A1 (en) * | 2016-11-15 | 2018-05-24 | 汉能联创移动能源投资有限公司 | Transparent conductive film and preparation method therefor, sputtering target, transparent conductive substrate and solar cell |
| CN112320845A (en) * | 2020-11-02 | 2021-02-05 | 四川大学 | Perovskite structure vanadate-based battery negative electrode active material |
| CN113488585A (en) * | 2021-07-05 | 2021-10-08 | 中国矿业大学 | Antiferromagnetic/ferroelectric multiferroic heterostructure and preparation method thereof |
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