CN114530540A - Color conversion layer and preparation method thereof - Google Patents
Color conversion layer and preparation method thereof Download PDFInfo
- Publication number
- CN114530540A CN114530540A CN202210154312.2A CN202210154312A CN114530540A CN 114530540 A CN114530540 A CN 114530540A CN 202210154312 A CN202210154312 A CN 202210154312A CN 114530540 A CN114530540 A CN 114530540A
- Authority
- CN
- China
- Prior art keywords
- quantum dots
- phase
- phase structure
- color conversion
- conversion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000002096 quantum dot Substances 0.000 claims abstract description 98
- 238000005191 phase separation Methods 0.000 claims abstract description 29
- 238000011049 filling Methods 0.000 claims abstract description 7
- 239000012071 phase Substances 0.000 claims description 106
- 239000010408 film Substances 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 239000007791 liquid phase Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical class [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 4
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 claims description 3
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical class C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 2
- 229910004613 CdTe Inorganic materials 0.000 claims 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical class [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical class [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims 1
- 239000003086 colorant Substances 0.000 abstract description 4
- 229910002601 GaN Inorganic materials 0.000 description 42
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 9
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000006056 electrooxidation reaction Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- FRLJSGOEGLARCA-UHFFFAOYSA-N cadmium sulfide Chemical class [S-2].[Cd+2] FRLJSGOEGLARCA-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
The invention discloses a color conversion layer and a preparation method thereof, wherein the preparation method comprises the following steps: (1) providing a phase separation structure; (2) corroding the phase separation structure to enable the phase separation structure to have a porous structure; (3) and filling the porous structure with first quantum dots. The preparation method of the color conversion layer provided by the invention provides a phase separation structure and corrodes the phase separation structure to form a porous structure, and then the porous structure is filled with the first quantum dots, if the first quantum dots with the same size are filled, the light with the same color is enhanced, and if two or more than two first quantum dots are filled, the light with different colors can be matched.
Description
Technical Field
The invention relates to the technical field of LED chips, in particular to a color conversion layer and a preparation method thereof.
Background
The LED chip has better energy-saving effect and higher brightness, and is used in various industries of production and life. In the prior art, LED chips are usually made of gallium nitride, and chips using gallium nitride can only emit blue light and green light, but cannot emit light of other colors, such as red light, and cannot meet application requirements. Therefore, when the LED is applied to the display field, the full-color picture can be displayed only by matching the red light chip of the AlInGaP quaternary system. However, in small-pitch or micro-pitch LED displays, the cost of producing flip red chips with low yield accounts for a large proportion, and the chips are difficult to further shrink, so an alternative to color conversion is proposed.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a preparation method of a color conversion layer, which comprises the following steps:
(1) providing a phase separation structure;
(2) corroding the phase separation structure to make the phase separation structure have a porous structure;
(3) and filling the porous structure with first quantum dots.
Preferably, in step (1), the phase-separated structure is prepared as follows:
providing a substrate, and forming at least a two-phase structure on the surface of the substrate, wherein the two-phase structure comprises a first phase structure and a second phase structure which can be separated.
Preferably, a GaN film is formed on the surface of the substrate by using a GaN film growth technology, the GaN film has the first phase structure and the second phase structure, the first phase structure is a GaN crystal phase, the second phase structure is a gallium liquid phase, and the GaN film is etched to remove the gallium liquid phase to form the porous structure.
Preferably, the second phase structure is embedded in the first phase structure, the first phase structure is selected from a GaN film, multiple etching is carried out on the GaN film, and a pore structure is formed by etching part of the GaN film to obtain the porous structure.
Preferably, the second phase structure comprises second quantum dots, and the parts of the second phase structure except the second quantum dots are corroded, and the second quantum dots are remained in the porous structure.
Preferably, the second quantum dot is at least one selected from the group consisting of GaAs quantum dot, InP quantum dot, CdS quantum dot, CdSe quantum dot, CdTe quantum dot, ZnSe quantum dot, PbS quantum dot, PbSe quantum dot, InAs quantum dot, InGaN quantum dot.
Preferably, the first phase structure contains first quantum dots, the second phase structure contains second quantum dots, and the portion of the second phase structure other than the second quantum dots is etched, and the second quantum dots are retained in the porous structure.
Preferably, an epitaxial film is formed on the surface of the substrate by using a GaN film growth technology and a Ga source, an As source and an N source, a GaN film embedded with GaAs quantum dots is formed by an epitaxial process or an annealing process, the GaN film is corroded to form the porous structure, and the porous structure contains the GaAs quantum dots.
Preferably, an InGaN thin film with a high In content is prepared on the surface of the substrate, the InGaN thin film with the high In content spontaneously generates component phase separation to form the first phase structure and the second phase structure, and the first phase structure is low InyGa1-yAn N phase, the second phase structure being In-rich InxGa1-xN phase, x>>y, the first phase structure and the second phase structure are embedded in the thin film in a mode of crystal grains with different sizes in space,
etching the second phase structure to form the porous structure, wherein the porous structure does not contain or contains In rich InxGa1-xAnd (4) N quantum dots.
Correspondingly, the invention also provides a color conversion layer prepared by the preparation method.
Compared with the prior art, the invention provides a preparation method of a color conversion layer, which comprises the steps of providing a phase separation structure, corroding the phase separation structure to form a porous structure, filling first quantum dots in the porous structure, realizing enhancement of light with the same color if the first quantum dots with the same size are filled, and matching light with different colors if two or more than two first quantum dots are filled.
Drawings
FIG. 1 shows a schematic structural diagram of a phase separation structure in embodiment 2 of a color conversion layer according to the invention.
Fig. 2 shows a schematic diagram of the phase-separated structure of fig. 1 after etching to form a porous structure.
Fig. 3 shows a schematic structural diagram of quantum dots filled in the porous structure in fig. 2.
FIG. 4 shows a schematic structural diagram of a phase separation structure in embodiment 3 of the color conversion layer according to the invention.
Fig. 5 shows a schematic diagram of the phase-separated structure of fig. 4 after etching to form a porous structure.
Fig. 6 shows a schematic structure diagram of quantum dots filled in the porous structure in fig. 5.
FIG. 7 shows a schematic structure diagram of an electrical excitation application in embodiment 5 of the color conversion layer of the present invention.
Description of the symbols:
a substrate 110, an InGaN thin film 120, a first phase structure 121, a second phase structure 122, InyGa1-yN quantum dots 123, InxGa1-xN quantum dots 124, cadmium sulfide quantum dots 125, epitaxial film 130, GaAs quantum dots 131, InP quantum dots 133, GaN film 140, conductive structure 210, and electrode 220.
Detailed Description
In order to explain technical contents, structural features, and objects and effects of the present invention in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
The invention provides a preparation method of a color conversion layer, which comprises the following steps:
(1) providing a phase separation structure;
(2) corroding the phase separation structure to make the phase separation structure have a porous structure;
(3) and filling the porous structure with the first quantum dots.
The phase separation structure may be a two-phase separation structure or a multi-phase separation structure, and one of the phases may be removed by etching through a certain technique, such as gas etching, electrochemical etching, and solution etching, but is not limited thereto. After the etching, one of the phase structures may be completely removed, or the quantum dots in the phase structure may be left to fill the portion after the etching. Further, the crystal quality of the phase separation structure is low, and the surface is in a fog shape, so that the phase separation is facilitated. Furthermore, the phase-separated structure is conductive, can be realized by doping, and is electrically n-type or p-type.
The porous structure refers to a phase separation structure in which pores formed by one phase structure are removed or grooves, pits, or holes formed by etching one phase structure are etched. For the latter, the quantum dots in the phase structure can also be retained, but the same appliesThe quantum dots can be removed, preferably with the quantum dots remaining in a porous structure. Furthermore, the corrosion mode can be gas corrosion, electrochemical corrosion, solution corrosion and other technical means. In which the gas corrodes, e.g. H2、HCL。
The filling of the first quantum dots in the porous structure means that at least one kind of the first quantum dots, more preferably 2 or more kinds of the first quantum dots are filled, and if two or more kinds of the first quantum dots with different sizes are filled, light with different colors can be obtained. And quantum dots with the same size can be continuously filled to realize the enhancement of the conversion of light with the same color. Further, the quantum dots may be filled by means of, but not limited to, impregnation and electric field injection. Still further, the first quantum dot is selected from at least one of a cadmium sulfide (CdS) quantum dot, a cadmium selenide (CdSe) quantum dot, a cadmium telluride (CdTe) quantum dot, a zinc selenide (ZnSe) quantum dot, a lead sulfide (PbS) quantum dot, a lead selenide (PbSe) quantum dot, an indium arsenide (InAs) quantum dot, an InGaN quantum dot, a GaAs quantum dot, an InP quantum dot.
Further, providing a substrate, and forming at least a two-phase structure on the surface of the substrate, wherein the two-phase structure comprises a first-phase structure and a second-phase structure which are separated, so that the phase separation structure is obtained. Specifically, in some embodiments, a GaN film is formed on the surface of the substrate by using a GaN film growth technique, the GaN film has a first phase structure and a second phase structure, the first phase structure is a GaN crystal phase, the second phase structure is a gallium liquid phase, and the GaN film is etched to remove the gallium liquid phase to form a porous structure. The GaN film growth technique can adopt, but is not limited to, HVPE or MOCVD technique. More preferably, the surface of the GaN film is a matte surface to facilitate phase separation, and a large number of V-shaped pits are distributed on the surface of the GaN film.
In a preferred embodiment, the second phase structure is embedded in the first phase structure, the first phase structure is selected from a GaN film, the GaN film is subjected to multiple etching, and the etching partially forms a pore structure to obtain a porous structure. In this manner, since the second phase structure is embedded in the first phase structure, the second phase structure can be etched so that the portion forms a hole. More preferably, however, the second phase structure comprises second quantum dots, and removing the portion (e.g., solution) of the second phase structure other than the second quantum dots, without etching the second quantum dots, remains in the porous structure, but does not preclude the second quantum dots from being removed from the porous structure. Preferably, the first phase structure contains first quantum dots, the second phase structure contains second quantum dots, and the etching removes a portion (e.g., solution) of the second phase structure other than the second quantum dots, and the second quantum dots remain in the porous structure. When the quantum dots are formed in the first phase structure in a specific mode, the first phase structure contains the first quantum dots, and the second phase structure contains the second quantum dots, so that light leakage is reduced, and the color conversion effect is enhanced. Still further, the second quantum dot is selected from at least one of GaAs quantum dot, InP quantum dot, cadmium sulfide (CdS) quantum dot, cadmium selenide (CdSe) quantum dot, cadmium telluride (CdTe) quantum dot, zinc selenide (ZnSe) quantum dot, lead sulfide (PbS) quantum dot, lead selenide (PbSe) quantum dot, indium arsenide (InAs) quantum dot, InGaN quantum dot.
It is understood that the manner of forming the first phase structure including the first quantum dots is achieved using GaN film growth techniques in combination with different materials. In one embodiment, an epitaxial film is formed on the surface of a substrate by using a GaN film growth technology and a Ga source, an As source and an N source, a GaN film embedded with GaAs quantum dots is formed by an epitaxial process or an annealing process, and the GaN film is corroded to form a porous structure, wherein the porous structure contains the GaAs quantum dots. In another embodiment, an epitaxial film is formed on the surface of the substrate by using a GaN film growth technology and a Ga source, an In source, a P source and an N source, and then the GaN film embedded with InP quantum dots can be formed through an epitaxial process or an annealing process, and the GaN film is corroded to form a porous structure, wherein the porous structure contains the InP quantum dots.
In a preferred embodiment, an InGaN thin film with high In content is prepared on the surface of a substrate, and the InGaN thin film with high In content spontaneously undergoes composition phase separation to form a first phase structure and a second phase structure, wherein the first phase structure is low InyGa1-yN phase and containing InyGa1-yN quantum dots, the second phase structure is In rich InxGa1-xN phase and InxGa1-xN quantum dots, x>>y, first phase structure andthe two-phase structure is embedded In the film In a mode of crystal grains with different sizes In space, the second-phase structure is corroded to form a porous structure, and the porous structure does not contain or contains In rich InxGa1-xAnd (4) N quantum dots. More preferably, 0.3<x<1，0<y<0.2。
In a preferred embodiment, the color conversion layer of the present invention is disposed on an excitation light source, which is an LED or LD (laser diode), and the quantum dots are excited by the excitation light source to emit light, such as blue light, green light, or UV light. In some embodiments, the color conversion layer of the present invention can be reversed on the conductive structure by electroluminescence, and an electrode is formed on one side of the color conversion layer. The surface of the conductive structure, which is opposite to the color conversion layer, is provided with an electrode, and the surface, which is opposite to the color conversion layer, is made of ITO or a semiconductor material which is opposite to the color conversion layer in electrical property and is made of the same material, so that the quantum dots are electrically excited.
The method for producing the color conversion layer according to the invention is explained in detail below with reference to the attached FIGS. 1 to 7 by means of several specific examples.
Example 1
A method of preparing a color conversion layer, comprising the steps of:
(1) providing a substrate, epitaxially growing a gallium-rich GaN film on the substrate by using an HVPE (high voltage vapor deposition) technology, forming two phases, a GaN crystal phase and a gallium liquid phase on the GaN film, wherein the surface of the GaN film is a matte surface and is distributed with a large number of V-shaped pits (V pits);
(2) removing liquid-phase gallium by using solution corrosion, and then using electrochemistry corrosion to form a V-shaped pit so that the GaN film forms a porous structure;
(3) cadmium sulfide (CdS) quantum dots and indium arsenide (InAs) quantum dots are filled in the porous structure in a leaching mode.
Example 2
Referring to fig. 1-3, a method for preparing a color conversion layer includes the steps of:
(1) providing a substrate 110, epitaxially growing an InGaN thin film 120 with a high In content on the surface of the substrate 110 by HVPE, wherein the InGaN thin film 120 with a high In content spontaneously undergoes composition phase separation due to high In content to form In with low InyGa1-yN phase andin-rich InxGa1-xN phase, first phase structure 121 is In with low InyGa1-yN phase and containing InyGa1-yN quantum dots 123, the second phase structure 122 being In-rich InxGa1-xN phase and containing InxGa1-x N Quantum dots 124, x>>y, x is 0.4, y is 0.02, and the first phase structure 121 and the second phase structure 122 are spatially embedded in the thin film in the form of grains with different sizes, please refer to fig. 1;
(2) using H2Gas etching to remove In-rich InxGa1-xN phase forming a porous structure consisting essentially of the first phase structure 121, the porous structure having In-rich InxGa1-x N Quantum dots 124, the first phase structure 121 itself, containing InyGa1-yN quantum dots 123, please refer to fig. 2;
(3) cadmium sulfide (CdS) quantum dots 125 are filled in the porous structure by means of electric field injection, please refer to fig. 3.
Example 3
Referring to fig. 4-6, a method for preparing a color conversion layer includes the steps of:
(1) providing a substrate 110, introducing a Ga source, an As source and an N source into MOCVD at the same time to form an epitaxial film 130, and forming a GaN film 140 embedded with GaAs quantum dots 131 by an epitaxial process, please refer to fig. 4;
(2) corroding the GaN film 140 by electrochemical corrosion to form a GaN porous structure, wherein GaAs quantum dots 131 are arranged in the porous structure, and the other non-corroded parts are also embedded with the GaAs quantum dots 131, please refer to FIG. 5;
(3) the InP quantum dots 133 are filled in the porous structure by electric field injection, please refer to fig. 6.
Example 4
(1) Providing a substrate, simultaneously introducing a Ga source, an In source, a P source and an N source In MOCVD (metal organic chemical vapor deposition) to form an epitaxial film, and forming a GaN film embedded with InP quantum dots by an epitaxial process;
(2) corroding the GaN film by electrochemical corrosion to form a GaN porous structure, wherein InP quantum dots are arranged in the porous structure, and InP quantum dots are also embedded in the rest un-corroded parts;
(3) and filling cadmium selenide (CdSe) quantum dots in the porous structure in an electric field injection mode.
Example 5
Referring to fig. 7, in an application of the color conversion layer, the color conversion layer obtained in example 2 is flipped over a conductive structure 210, and an electrode 220 is formed on one side of the color conversion layer. The conductive structure 210 has an electrode (not shown) on a side opposite to the color conversion layer, and the side opposite to the color conversion layer is made of ITO or a semiconductor material having an electrical property opposite to that of the color conversion layer.
The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the scope of the present invention, therefore, the present invention is not limited by the appended claims.
Claims (10)
1. A method of making a color conversion layer, comprising the steps of:
(1) providing a phase separation structure;
(2) corroding the phase separation structure to make the phase separation structure have a porous structure;
(3) and filling the porous structure with first quantum dots.
2. The method for preparing a color conversion layer according to claim 1, wherein in step (1), the phase-separated structure is prepared as follows:
providing a substrate, and forming at least a two-phase structure on the surface of the substrate, wherein the two-phase structure comprises a first phase structure and a second phase structure which can be separated.
3. The method according to claim 2, wherein a GaN film is formed on the surface of the substrate by using a GaN film growth technique, wherein the GaN film has the first phase structure and the second phase structure, the first phase structure is a GaN crystal phase, the second phase structure is a gallium liquid phase, and the GaN film is etched to remove the gallium liquid phase to form the porous structure.
4. The method of preparing a color conversion layer according to claim 2, wherein the second phase structure is embedded in the first phase structure, the first phase structure is selected from a GaN film, the GaN film is etched at a plurality of places, and a pore structure is formed by etching a part of the GaN film to obtain the porous structure.
5. The method of preparing a color conversion layer according to claim 4, wherein the second phase structure comprises second quantum dots, and a portion of the second phase structure other than the second quantum dots is etched, and the second quantum dots remain in the porous structure.
6. The method of preparing a color conversion layer according to claim 5, wherein the second quantum dots are selected from at least one of GaAs quantum dots, InP quantum dots, CdS quantum dots, CdSe quantum dots, CdTe quantum dots, ZnSe quantum dots, PbS quantum dots, PbSe quantum dots, InAs quantum dots, InGaN quantum dots.
7. The method of preparing a color conversion layer according to claim 2, wherein the first phase structure contains first quantum dots, the second phase structure contains second quantum dots, and a portion of the second phase structure other than the second quantum dots is etched, and the second quantum dots remain in the porous structure.
8. The method of manufacturing a color conversion layer according to claim 7, wherein an epitaxial film is formed on the surface of the substrate by using a GaN film growth technique with a Ga source, an As source, and an N source, and then a GaN film embedded with GaAs quantum dots is formed by an epitaxial process or an annealing process, and the GaN film is etched to form the porous structure, wherein the porous structure contains the GaAs quantum dots.
9. The method of preparing a color conversion layer according to claim 2, wherein a high In InGaN thin film is prepared on the surface of the substrate, the high In InGaN thin film spontaneously emittingSeparating raw components to form the first phase structure and the second phase structure, wherein the first phase structure is In low InyGa1-yAn N phase, the second phase structure being In-rich InxGa1-xN phase, x>>y, the first phase structure and the second phase structure are embedded in the film in a grain mode with different sizes in space,
etching the second phase structure to form the porous structure, wherein the porous structure does not contain or contains In rich InxGa1-xAnd (4) N quantum dots.
10. A color conversion layer, characterized in that it is produced by the production method as claimed in any of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210154312.2A CN114530540B (en) | 2022-02-18 | 2022-02-18 | Color conversion layer and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210154312.2A CN114530540B (en) | 2022-02-18 | 2022-02-18 | Color conversion layer and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114530540A true CN114530540A (en) | 2022-05-24 |
| CN114530540B CN114530540B (en) | 2023-06-09 |
Family
ID=81624719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210154312.2A Active CN114530540B (en) | 2022-02-18 | 2022-02-18 | Color conversion layer and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114530540B (en) |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1894799A (en) * | 2003-09-05 | 2007-01-10 | 点度量技术有限公司 | Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture |
| CN102420277A (en) * | 2011-11-15 | 2012-04-18 | 南京大学 | Method for preparing active layer structure with high-density gallium nitride quantum dots |
| CN103792767A (en) * | 2012-10-31 | 2014-05-14 | 深圳市绎立锐光科技开发有限公司 | Wavelength converter, manufacturing method thereof and related wavelength conversion device |
| WO2014147570A1 (en) * | 2013-03-20 | 2014-09-25 | Koninklijke Philips N.V. | Encapsulated quantum dots in porous particles |
| CN105204104A (en) * | 2015-10-30 | 2015-12-30 | 京东方科技集团股份有限公司 | Optical filter, production method thereof, display substrate and display device |
| CN108389941A (en) * | 2018-04-08 | 2018-08-10 | 中国科学院半导体研究所 | It is aobvious to refer to adjustable unstressed configuration powder Single chip white light LED component and preparation method thereof |
| CN110112172A (en) * | 2019-05-22 | 2019-08-09 | 南京大学 | Based on panchromatic micron LED display chip of gallium nitride nanohole array/quantum dot mixed structure and preparation method thereof |
| CN110808315A (en) * | 2019-09-29 | 2020-02-18 | 北京工业大学 | Method for increasing GaN Micro-LED color conversion efficiency |
| CN111048641A (en) * | 2019-10-30 | 2020-04-21 | 厦门大学 | Single-chip white light emitting diode and preparation method thereof |
| CN111129333A (en) * | 2019-12-30 | 2020-05-08 | 广东聚华印刷显示技术有限公司 | QLED device, display device and preparation method of QLED device |
| CN113224212A (en) * | 2021-05-13 | 2021-08-06 | 南京大学 | Multicolor-stacked step-type backlight Micro-LED display device and preparation method thereof |
| CN113690270A (en) * | 2021-08-17 | 2021-11-23 | 复旦大学 | Multi-quantum well epitaxial growth method for single-chip micro-LED full-color display |
| EP3940445A1 (en) * | 2020-07-14 | 2022-01-19 | Sony Group Corporation | Film, illumination device, projector color wheel and method of manufacturing a film |
| CN114050212A (en) * | 2021-11-08 | 2022-02-15 | 邬宗秀 | Quantum dot light conversion film and preparation method thereof |
-
2022
- 2022-02-18 CN CN202210154312.2A patent/CN114530540B/en active Active
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1894799A (en) * | 2003-09-05 | 2007-01-10 | 点度量技术有限公司 | Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture |
| CN102420277A (en) * | 2011-11-15 | 2012-04-18 | 南京大学 | Method for preparing active layer structure with high-density gallium nitride quantum dots |
| CN103792767A (en) * | 2012-10-31 | 2014-05-14 | 深圳市绎立锐光科技开发有限公司 | Wavelength converter, manufacturing method thereof and related wavelength conversion device |
| WO2014147570A1 (en) * | 2013-03-20 | 2014-09-25 | Koninklijke Philips N.V. | Encapsulated quantum dots in porous particles |
| TW201444948A (en) * | 2013-03-20 | 2014-12-01 | 皇家飛利浦有限公司 | Encapsulated quantum dots in porous particles |
| CN105204104A (en) * | 2015-10-30 | 2015-12-30 | 京东方科技集团股份有限公司 | Optical filter, production method thereof, display substrate and display device |
| WO2017071455A1 (en) * | 2015-10-30 | 2017-05-04 | 京东方科技集团股份有限公司 | Optical filter and manufacturing method therefor, display substrate, and display apparatus |
| CN108389941A (en) * | 2018-04-08 | 2018-08-10 | 中国科学院半导体研究所 | It is aobvious to refer to adjustable unstressed configuration powder Single chip white light LED component and preparation method thereof |
| CN110112172A (en) * | 2019-05-22 | 2019-08-09 | 南京大学 | Based on panchromatic micron LED display chip of gallium nitride nanohole array/quantum dot mixed structure and preparation method thereof |
| CN110808315A (en) * | 2019-09-29 | 2020-02-18 | 北京工业大学 | Method for increasing GaN Micro-LED color conversion efficiency |
| CN111048641A (en) * | 2019-10-30 | 2020-04-21 | 厦门大学 | Single-chip white light emitting diode and preparation method thereof |
| CN111129333A (en) * | 2019-12-30 | 2020-05-08 | 广东聚华印刷显示技术有限公司 | QLED device, display device and preparation method of QLED device |
| EP3940445A1 (en) * | 2020-07-14 | 2022-01-19 | Sony Group Corporation | Film, illumination device, projector color wheel and method of manufacturing a film |
| CN113224212A (en) * | 2021-05-13 | 2021-08-06 | 南京大学 | Multicolor-stacked step-type backlight Micro-LED display device and preparation method thereof |
| CN113690270A (en) * | 2021-08-17 | 2021-11-23 | 复旦大学 | Multi-quantum well epitaxial growth method for single-chip micro-LED full-color display |
| CN114050212A (en) * | 2021-11-08 | 2022-02-15 | 邬宗秀 | Quantum dot light conversion film and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114530540B (en) | 2023-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9484492B2 (en) | LED structures for reduced non-radiative sidewall recombination | |
| US9601659B2 (en) | LED structures for reduced non-radiative sidewall recombination | |
| US10128410B2 (en) | Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates | |
| US20170236807A1 (en) | Iii-v micro-led arrays and methods for preparing the same | |
| CN100452456C (en) | Nitride semiconductor light emitting device and fabricating method thereof | |
| US20090101886A1 (en) | Semiconductor light-emitting device and method of fabricating the same | |
| US20230051845A1 (en) | Iii-nitride p-n junction device using porous layer | |
| US8334156B2 (en) | Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same | |
| CN100438109C (en) | Light-emitting diode, integrated light-emitting diode and method for their production, method for growing, light source cell unit, backlight device, display and electronic device | |
| CN101728462A (en) | Multi-wavelength light-emitting diode and production method thereof | |
| JP2023536361A (en) | LED device and method for manufacturing LED device | |
| US8476639B2 (en) | Group III nitride semiconductor and group III nitride semiconductor structure | |
| JP2005210050A (en) | Nitride semiconductor light emitting diode and its manufacturing method | |
| CN103346228B (en) | Semiconductor element | |
| JP2023536362A (en) | LED device and method for manufacturing LED device | |
| JP2002185044A (en) | Nitride semiconductor multi-colored light-emitting element | |
| US20220246797A1 (en) | Semiconductor template and fabrication method | |
| CN114530540B (en) | Color conversion layer and preparation method thereof | |
| US8409972B2 (en) | Light emitting diode having undoped and unintentionally doped nitride transition layer | |
| CN101840971B (en) | Light-emitting diode and manufacturing method thereof | |
| Okuno et al. | Emission Mechanism of Light‐Emitting Diode Structures with Red, Green, and Blue Active Layers Separated by Si‐Doped Interlayers | |
| KR101613958B1 (en) | Manufacturing method for display device | |
| US20230317871A1 (en) | Light emitting diode (led) structures for a microled device, and method for producing an array of led structures | |
| KR101198760B1 (en) | LED having vertical structure and method of making the same | |
| US9209349B2 (en) | Method of fabricating nitride semiconductor light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |