CN114520271A - Selenium antimony sulfide thin-film solar cell with adjustable back contact interface and preparation method - Google Patents
Selenium antimony sulfide thin-film solar cell with adjustable back contact interface and preparation method Download PDFInfo
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- CN114520271A CN114520271A CN202210078428.2A CN202210078428A CN114520271A CN 114520271 A CN114520271 A CN 114520271A CN 202210078428 A CN202210078428 A CN 202210078428A CN 114520271 A CN114520271 A CN 114520271A
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- antimony sulfide
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- 239000010409 thin film Substances 0.000 title claims abstract description 39
- MUYUEDVRJJRNOO-UHFFFAOYSA-N selanylidene(sulfanylidene)antimony Chemical compound S=[Sb]=[Se] MUYUEDVRJJRNOO-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000010408 film Substances 0.000 claims abstract description 50
- 239000011669 selenium Substances 0.000 claims abstract description 35
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000002105 nanoparticle Substances 0.000 claims abstract description 20
- 239000010949 copper Substances 0.000 claims abstract description 19
- 230000005525 hole transport Effects 0.000 claims abstract description 18
- 238000010521 absorption reaction Methods 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 9
- 229910005855 NiOx Inorganic materials 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 12
- 238000004528 spin coating Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 4
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 3
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 claims description 3
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 3
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 3
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000005642 Oleic acid Substances 0.000 claims description 3
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 229940078494 nickel acetate Drugs 0.000 claims description 3
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 claims description 3
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 3
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims 2
- YKYOUMDCQGMQQO-UHFFFAOYSA-L Cadmium chloride Inorganic materials Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 8
- 230000006798 recombination Effects 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 230000001105 regulatory effect Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 230000001276 controlling effect Effects 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 abstract description 3
- 238000005036 potential barrier Methods 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000003917 TEM image Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052959 stibnite Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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Abstract
The invention discloses a selenium antimony sulfide thin-film solar cell with an adjustable back contact interface and a preparation method thereof, and is characterized in that the preparation method is carried out on glass/ITO/CdS/Sb2(S,Se)3NiO formed by coating on Au top lining structure to form filmxHole transport layer in Sb2(S,Se)3The film constructs a back electric field, namely a layer of copper-doped NiO is spin-coated on the surface of the selenium antimony sulfide absorption layerxThe nanoparticles act as hole transport materials. Compared with the prior art, the method has the advantages of regulating and controlling and optimizing the back electrode interface energy level arrangement, reducing the interface recombination loss and the like, and NiO is doped by copperxHole transport layer strategy to effectively address Sb2(S,Se)3The semiconductor material has the problem of back contact potential barrier caused by high work function, improves the photovoltaic performance of the device, and provides a technical scheme for preparing the selenium antimony sulfide thin-film solar cell with high efficiency and low cost.
Description
Technical Field
The invention relates to the technical field of photoelectric materials and thin-film solar cells, in particular to a selenium antimony sulfide thin-film solar cell with back contact interface adjustment for improving the photovoltaic performance of the solar cell and a preparation method thereof.
Background
Selenium antimony sulfide (Sb)2(S,Se)3) Is a novel P-type semiconductor absorption material emerging in the photovoltaic field in recent years. As a solar cell absorbing layer material, it has a high absorption coefficient (10)5cm-1) The solar cell has the characteristics of adjustable band gap (1.1-1.7 eV), intrinsic benign grain boundary, abundant and environment-friendly raw material reserves, low crystal growth temperature and the like, and has the device theoretical efficiency of more than 30 percent, thereby being an ideal solar energy absorbing layer material with great potential. More importantly, the compound has stable chemical property, is insensitive to water and oxygen, and has more important scientific value and application prospect.
Sb of the prior art2(S,Se)3The thin film solar cell has high back electrode contact potential barrier, and the reduction of interface recombination loss is a key scientific problem which is urgently needed to be solved for further improving the device performance.
Disclosure of Invention
The invention aims to provide an antimony selenide thin-film solar cell with an adjustable back contact interface and a preparation method thereof aiming at the defects of the prior artxHole transport layer in Sb2(S,Se)3The film constructs a back electric field to realize a P-I-N structure device, the conductivity of a NiOx hole transport layer is improved by introducing copper acceptor doping, the back surface chemical composition and the electrical characteristics of Sb2(S, Se)3 are utilized to optimize back interface energy band arrangement so as to reduce a back contact potential barrier, the interface recombination loss is effectively reduced, the hole extraction capability of the selenium antimony sulfide film solar cell is greatly improved, the photovoltaic performance of the solar cell is improved, and the Sb layer is subjected to hole extraction2(S,Se)3Thin film solar cellSpin coating of copper-doped NiO on surface of absorption layerxThe hole transport layer improves the performance of the device, regulates and optimizes the interface energy level arrangement of the back electrode, and better solves the problem of high work function Sb2(S,Se)3The key scientific problems of low carrier concentration, difficult P-type doping and poor hole extraction capability in the semiconductor material provide a technical scheme for preparing the selenium antimony sulfide thin-film solar cell with high efficiency and low cost.
The specific technical scheme for realizing the purpose of the invention is as follows: a selenium antimony sulfide thin-film solar cell with an adjustable back contact interface is characterized in that an electron transmission layer, an absorption layer, a hole transmission layer and an electrode layer are sequentially deposited or spin-coated on a transparent ITO conductive glass substrate to form a thin-film structure, and a copper acceptor doped selenium antimony sulfide thin-film solar cell is introduced, wherein the electron transmission layer is a CdS thin film, and the thickness of the CdS thin-film is 30-80 nm; the absorption layer is Sb2(S,Se)3A thin film having a thickness of 400 to 1500 nm; the hole transport layer is copper-doped NiOxA film of nanoparticles having a thickness of 10 to 60 nm; the electrode layer is an Au layer of 80-120 nm.
A preparation method of a selenium antimony sulfide thin-film solar cell with an adjustable back contact interface is characterized in that the solar cell is prepared according to the following steps:
1) cleaning a substrate: sequentially carrying out ultrasonic cleaning on the ITO conductive glass substrate by using a detergent, acetone and ethanol, then washing by using deionized water, and finally drying by using nitrogen for later use;
2) depositing a CdS film on an ITO conductive glass liner by adopting a chemical water bath method: CdCl 20 mg/ml was used2Carrying out spin coating on the CdS film for 30 seconds by using a methanol solution at 2000 rpm, and annealing the treated CdS film in air at 350-450 ℃ for 5 min;
3) sb deposited on CdS film surface by adopting dual-temperature-zone gas-phase transport system2(S,Se)3Film formation: at 20 ℃ for min-1Heating to 450-550 ℃ at the heating rate, keeping the temperature for 3 min under the air pressure of 2.5-3.5 Pa, annealing, and naturally cooling to room temperature to obtain the Sb2(S,Se)3The film is an absorption layer;
4) 5at% of the prepared copper-doped NiOxNanoparticlesSpin coating onto Sb2(S,Se)3Heating and drying the surface of the film to evaporate the solvent to obtain the copper-doped NiOxThe film is a hole transport layer;
5) under vacuum degree of 5X 10-3Under the condition of Pa, doping NiO in copper by adopting a thermal evaporation methodxAnd depositing a gold electrode layer on the film, wherein the thickness of the gold electrode layer is 80-120 nm, and preparing the selenium antimony sulfide film solar cell with a film structure and introduced with copper acceptor doping.
The copper-doped NiO in the step 4)xThe preparation method of the nanoparticle spin-coating liquid specifically comprises the following steps:
a. respectively weighing 1mmol of nickel acetate, 16mmol of oleic acid and 6mmol of oleylamine, and dissolving in 25ml of octadecene;
b. stirring the solution for 30min by using a magnetic stirrer until all reagents are completely dissolved and uniformly mixed;
c. transferring the uniformly mixed solution into a reaction kettle with a capacity of 40ml and a polytetrafluoroethylene inner container, introducing argon, sealing the reaction kettle, and then placing the reaction kettle in an electric heating constant-temperature blast drying oven at the temperature of 150-180 ℃ for reaction for 3-4 hours;
d. after the reaction is finished, the mixture is naturally cooled to room temperature, the obtained dark brown product is alternately cleaned for a plurality of times by ethanol and normal hexane and then dispersed in deionized water to prepare 5at percent of copper-doped NiOxAnd (3) carrying out nano particle spin coating.
The copper doped NiOxDuring the preparation of the hole transport layer, NiO can be realized by changing the concentration of solute and the rotating speed of spin coatingxAnd regulating and controlling the doping amount and thickness of the thin film.
Sb in the step 3)2(S,Se)3Sb prepared by thin film2(S,Se)3The powder is Sb2S3(99.999% purity) and Sb2Se3(99.999% purity) in a molar ratio of 1: 3.
Compared with the prior art, the method has the advantages of regulating and controlling and optimizing the back electrode interface energy level arrangement, reducing the interface recombination loss and the like, and NiO is doped by copperxHole transport layer strategy to effectively address Sb2(S,Se)3The high work function of the semiconductor material leads to back contact barrier problems,the conductivity of the film is improved, the energy level of a back contact interface is regulated to a proper position to improve the hole extraction efficiency, and the Sb is realized by skillfully combining copper ions2(S,Se)3The crystal boundary is reversed, and deep defect recombination is effectively inhibited, so that the carrier collection efficiency is improved. The invention is in glass/ITO/CdS/Sb2(S,Se)3NiO adopting spin coating to form film on the basis of Au top lining structure solar cellxHole transport layer in Sb2(S,Se)3The film constructs a back electric field, realizes a P-I-N structure device, has simple and convenient preparation method, and provides a technical scheme for preparing the selenium antimony sulfide film solar cell with high efficiency and low cost.
Drawings
FIG. 1 is a schematic diagram of a selenium antimony sulfide thin film solar cell with an adjustable back contact interface;
FIG. 2 shows undoped and copper-doped NiO prepared in example 1 and comparative example 2xXRD pattern of nanoparticles;
FIG. 3 shows the copper doped NiO prepared in example 1xA spectrum of the nanoparticles;
FIG. 4 shows copper doped NiO prepared in example 1xTEM images of the nanoparticles;
FIG. 5 shows the preparation of non-copper-doped NiO in comparative example 2xTEM images of the nanoparticles;
FIG. 6 is a J-V curve of the selenium antimony sulfide thin film solar cells of example 1 and comparative example 2.
Detailed Description
Referring to fig. 1, an electron transport layer 2, an absorption layer 3, a hole transport layer 4 and an electrode layer 5 are sequentially deposited or spin-coated on a transparent ITO conductive glass substrate 1 to form a film structure, and a copper acceptor doped antimony selenide thin film solar cell is introduced, wherein the electron transport layer 2 is a CdS thin film with the thickness of 30-80 nm; the absorption layer 3 is Sb2(S,Se)3A thin film having a thickness of 400 to 1500 nm; the hole transport layer 4 is copper-doped NiOxThe thickness of the nano-particle film is 110-60 nm; the electrode layer 5 is an Au layer of 80-120 nm.
The present invention will be described in further detail with reference to the following specific examples, but the present invention is not limited to the following examples. Variations and advantages that may occur to those skilled in the art may be incorporated into the invention without departing from the spirit and scope of the inventive concept, and the scope of the appended claims is intended to be protected. The procedures, conditions, reagents, experimental methods and the like for carrying out the present invention are general knowledge and common general knowledge in the art except for the contents specifically mentioned below, and the present invention is not particularly limited.
Example 1
The embodiment provides a preparation method of a selenium antimony sulfide thin-film solar cell with an adjustable back contact interface, which comprises the following steps:
1) cleaning a substrate: sequentially carrying out ultrasonic cleaning on the ITO conductive glass substrate by using a detergent, acetone and ethanol, then washing by using deionized water, and finally drying by using nitrogen for later use;
2) depositing a CdS film on the ITO film by a chemical water bath method: using CdCI2Anhydrous methanol solution (20 mgml)-1) Carrying out spin coating treatment on the CdS film for 30 seconds, and then annealing for 5min in air at 400 ℃;
3) sb deposition on CdS surface by adopting dual-temperature-zone gas-phase transport system2(S,Se)3Film formation: at 20 ℃ for min-1The temperature rise rate is increased to 520 ℃, the air pressure is kept at about 3 Pa, and the temperature is kept for 3 min and then the mixture is naturally cooled to the room temperature;
4) in Sb2(S,Se)3A layer of copper-doped NiO is coated on the surface of the film in a spin modexNiO is carried out before the hole transport layerxThe preparation of nanoparticles comprising the steps of:
a) respectively weighing 1mmol of nickel acetate, 0.05 mmol of copper acetate, 16mmol of oleic acid and 6mmol of oleylamine, and dissolving in 25ml of octadecene;
b) then stirring the solution for 30min by using a magnetic stirrer until the solution is completely dissolved and uniformly mixed;
c) transferring the uniformly mixed solution into a reaction kettle with a capacity of 40ml and a polytetrafluoroethylene inner container, introducing argon, sealing the reaction kettle, and placing the reaction kettle in an electric heating constant-temperature blast drying oven at 180 ℃ for reaction for 4 hours;
d) after the reaction is finished, naturally cooling the reaction kettleCooling to room temperature to obtain a dark brown product, and alternately cleaning the dark brown product with ethanol and n-hexane for a plurality of times to obtain the NiOxAnd (3) nanoparticles.
The following steps were further continued to prepare copper-doped NiOxHole transport layer:
e) preparation of 5at% copper-doped NiO by hydrothermal methodxA nanoparticle;
f) then 5at% of copper is doped with NiOxNanoparticles spin-coated onto Sb2(S,Se)3A film surface;
g) the sample was then dried on a hot platen to evaporate the solvent to give NiOxA hole transport layer;
5) finally, the vacuum degree is 5 × 10-3Under the condition of Pa, NiO is thermally evaporatedxAnd depositing a gold electrode on the hole transport layer, wherein the thickness of the gold electrode is 100 nm.
Comparative example 1
1) Cleaning a substrate: the same procedure as in 1) of example 1;
2) depositing a CdS film on the ITO film by a chemical water bath method: the same procedure as in 2) of example 1;
3) sb deposition on CdS surface by adopting dual-temperature-zone gas-phase transport system2(S,Se)3Film formation: the same procedure as in 3) of example 1;
4) in Sb2(S,Se)3Depositing a gold electrode layer on the film: the same as 5) of the example 1; i.e. not in Sb2(S,Se)3A layer of copper-doped NiO is spin-coated on the absorption layerxAnd (4) a hole transport layer, thereby obtaining the selenium antimony sulfide thin-film solar cell without a back contact hole transport layer.
Comparative example 2
1) Cleaning a substrate: the same procedure as in 1) of example 1;
2) depositing a CdS film on the ITO film by a chemical water bath method: the same procedure as in 2) of example 1;
3) sb deposition on CdS surface by adopting double-temperature-zone gas-phase transport system2(S,Se)3Film formation: the same procedure as in 3) of example 1;
4) in Sb2(S,Se)3Spin coating a layer of NiO on the surface of the filmxNanoparticles ofThen the sample is placed on a hot bench for drying to evaporate the solvent, thus obtaining NiOxA hole transport layer;
5) in NiOxDepositing a gold electrode on the hole transport layer: the same as 5) of the example 1; to obtain NiO withxA selenium antimony sulfide thin-film solar cell of a hole transport layer.
Referring to FIGS. 2 to 3, XRD and energy spectrum results of example 1 and comparative example 2 show that 5at% of copper doped does not form a hetero phase, and the synthesized NiOxThe nanoparticles can be well dispersed in deionized water solvent.
Referring to FIGS. 4 to 5, NiO prepared in example 1 is shown by way of example 1 and comparative example 2xThe nanoparticles are of uniform nanometer size. NiO obtained by spin coatingxThe film has high flatness, and these are Sb2(S,Se)3The NiOx thin layer is inserted into the Au interface to lay a foundation.
Referring to FIG. 6, it is confirmed that the copper doping of example 1 can improve NiO by the above example 1 and comparative examples 1 to 2xThe conductivity can regulate and control the energy band of the back contact interface of the thin film battery, and the performance of the device is further improved.
The above embodiments are preferred embodiments of the present invention, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (5)
1. A selenium antimony sulfide thin-film solar cell with an adjustable back contact interface is characterized in that an electron transmission layer, an absorption layer, a hole transmission layer and an electrode layer are sequentially deposited or spin-coated on a transparent ITO conductive glass substrate to form a thin-film structure, copper acceptor doping is introduced into the selenium antimony sulfide thin-film solar cell, the electron transmission layer is a CdS thin film, and the thickness of the electron transmission layer is 30-80 nm; the absorption layer is Sb2(S,Se)3A thin film having a thickness of 400 to 1500 nm; the hole transport layer is copper-doped NiOxA nanoparticle thin film having a thickness of 10 to 60 nm; the electrode layer is an Au layer of 80-120 nm.
2. The method for preparing the back contact interface controllable selenium antimony sulfide thin-film solar cell according to claim 1, wherein the solar cell is prepared by the following steps:
1) preparation of CdS thin film
Depositing CdS film on ITO conductive glass substrate by chemical water bath method, and using CdCl2Carrying out spin coating treatment on the CdS film by using a methanol solution, and annealing at 350-450 ℃ for 5min to obtain a CdS film as an electron transport layer with the thickness of 30-80 nm;
2）Sb2(S,Se)3preparation of films
Sb deposition on CdS film by double-temperature-zone gas-phase transport method2(S,Se)3Heating the film to 450-550 ℃, preserving heat for 3 min under the air pressure of 2.5-3.5 Pa, and naturally cooling to room temperature to obtain Sb2(S,Se)3The film is an absorption layer with the thickness of 400-1500 nm;
3) copper doped NiOxPreparation of films
5at% of the prepared copper-doped NiOxNanoparticles spin-coated onto Sb2(S,Se)3Heating and drying the surface of the film to evaporate the solvent to obtain the copper-doped NiOxThe film is a hole transport layer and has a thickness of 10-60 nm;
4) preparation of the electrode layer
Under vacuum degree of 5X 10-3Under the condition of Pa, doping NiO in copper by adopting a thermal evaporation methodxAnd depositing a gold electrode layer on the film, wherein the thickness of the gold electrode layer is 80-120 nm, and preparing the selenium antimony sulfide film solar cell with a film structure and introduced with copper acceptor doping.
3. The method for preparing the selenium antimony sulfide thin-film solar cell with the adjustable back contact interface of claim 2, wherein the CdCl in the step 1) is adopted2The concentration of the methanol solution is 20 mg/ml; the spin speed was 2000 rpm and the spin time was 30 seconds.
4. The selenium antimony sulfide thin film solar with adjustable back contact interface of claim 2The preparation method of the battery is characterized in that the temperature rise rate in the step 2) is 20 ℃ for min-1。
5. The method for preparing the selenium antimony sulfide thin-film solar cell with the controllable back contact interface as claimed in claim 2, wherein the 5at% of copper doped NiO in the step 3) isxThe preparation method of the nanoparticle spin-coating liquid comprises the following steps:
1) mixing nickel acetate with copper acetate, oleic acid, oleylamine and octadecene according to the ratio of 1 mmol: 0.05 mmol: 16 mmol: 6 mmol: mixing evenly at a molar volume ratio of 25 ml;
2) transferring the mixed solution to a reaction kettle, introducing argon, and reacting for 3-4 hours at the temperature of 150-180 ℃;
3) after the reaction is finished, the mixture is naturally cooled to room temperature, the prepared product is alternately cleaned for a plurality of times by using ethanol and normal hexane and then dispersed in deionized water solution to prepare 5at percent of copper-doped NiOxAnd (3) carrying out nano particle spin coating.
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| CN105932114A (en) * | 2016-07-19 | 2016-09-07 | 福建师范大学 | Method for preparing solar cell absorbing layer film based on water bath and post-selenization |
| US20180323329A1 (en) * | 2017-05-05 | 2018-11-08 | Universidad De Antioquia | Low temperature p-i-n hybrid mesoporous optoelectronic device |
| CN112349843A (en) * | 2020-11-06 | 2021-02-09 | 中国科学技术大学 | Hole transport layer material of solar cell, antimony-based solar cell and preparation method of antimony-based solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105932114A (en) * | 2016-07-19 | 2016-09-07 | 福建师范大学 | Method for preparing solar cell absorbing layer film based on water bath and post-selenization |
| US20180323329A1 (en) * | 2017-05-05 | 2018-11-08 | Universidad De Antioquia | Low temperature p-i-n hybrid mesoporous optoelectronic device |
| CN112349843A (en) * | 2020-11-06 | 2021-02-09 | 中国科学技术大学 | Hole transport layer material of solar cell, antimony-based solar cell and preparation method of antimony-based solar cell |
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