CN1145195C - Semiconductor structure having crystalline alkaline earth metal oxide interface with silicon - Google Patents
Semiconductor structure having crystalline alkaline earth metal oxide interface with silicon Download PDFInfo
- Publication number
- CN1145195C CN1145195C CNB001202189A CN00120218A CN1145195C CN 1145195 C CN1145195 C CN 1145195C CN B001202189 A CNB001202189 A CN B001202189A CN 00120218 A CN00120218 A CN 00120218A CN 1145195 C CN1145195 C CN 1145195C
- Authority
- CN
- China
- Prior art keywords
- interface
- atom
- silicon
- semiconductor structure
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention relates to a semiconductor structure which comprises a silicon substrate (10), one layer or multiple layers of monocrystal oxides (26) and interface (s) (14) between (among) the silicon substrate and the one layer or the multiple layers of monocrystal oxides, wherein the interface (s) is (are) made of crystalline material matched with the lattice constant of silicon, and comprise (s) a silicon, oxygen and metal atom layer formed by XSIO2, and X represents metal.
Description
Technical field
The present invention relates generally to a kind of semiconductor structure that comprises the crystalline alkaline earth metal oxide interface between silicon substrate and other oxide layer, particularly a kind of interface that comprises the atomic layer of alkaline-earth metal, silicon and oxygen.
Background technology
For many device application, with regard to subsequently on silicon with regard to the epitaxial growth monocrystal thin films, the ferroelectric or high dielectric constant oxide of for example non-volatile high density storage and logical device is wished orderly and stable silicon (Si) surface most.Especially for the perovskite for example of growing single-crystal oxide subsequently, importantly on the Si surface, set up orderly transition zone.
About for example BaO and BaTiO
3The basis of waiting some reports of this type oxide growth is by being higher than under 850 ℃ the temperature, utilizes the reaction extension to go up the BaSi of deposit 1 the 4th individual layer Ba at Si (100)
2(cube) model.For example referring to: people such as R.Mckee are at the article (on August 12nd, 1991) of Appl.Phys.Lett.59 (7) 782-784 pages or leaves; People such as R.Mckee are at the article (on November 15th, 1993) of Appl.Phys.Lett.63 (20) 2818-2820 pages or leaves; People such as R.Mckee are at Mat.Res.Soc.Symp.Proc. the 21st volume, the article of 131-135 page or leaf (1991); Authorize, be entitled as the United States Patent (USP) 5225031 of " method of epitaxial diposition oxide and the structure for preparing with this method on silicon substrate " on July 6th, 1993; Authorized, be entitled as the United States Patent (USP) 5482003 of " on substrate the method for deposit extension alkaline earth oxide and utilize the structure of this method preparation " on January 9th, 1996.Yet it is stable that the atom utmost point simulation of this structure that has proposed shows that this at elevated temperatures structure is difficult for.
Finished and utilized the SrTiO of SrO resilient coating on silicon (100)
3Growth.Referring to the article of people such as T.Tambo (1998) the 4454th pages-4459 pages of Jpn.J.Appl.Phys. the 37th volumes.Yet, SrO resilient coating thicker (100 dust), thereby limited the application of crystal periosteum, and can not keep crystallinity in the whole growth.
In addition, utilized the thick metal oxide buffer layer (60-120 dust) of Sr or Ti on silicon, to grow SrTiO
3Referring to the article of people such as B.K.Moon at Jpn.J.Appl.Phys. the 33rd volume (1994) 1472-1477 pages or leaves.The application of these thick resilient coatings meeting limit transistors.
Summary of the invention
Therefore, need a kind of method of making thin and steady crystalizing interface.
According to an aspect of the present invention, provide a kind of semiconductor structure, it is characterized in that: silicon substrate; One or more layers monocrystalline oxide; Interface between silicon substrate and one or more layers monocrystalline oxide, said interface is a feature with the monoatomic layer crystalline material with the lattice constant match of silicon, said crystalline material is a feature with silicon, oxygen and metal.
According to a further aspect in the invention, provide a kind of semiconductor structure, it is characterized in that: silicon substrate with surface; The monocrystalline oxide layer; Reaching with the metallic silicon oxide is one deck of feature, and this layer forms the interface in surface of silicon and monocrystalline oxide interlayer.
According to another aspect of the invention, provide a kind of semiconductor structure, it is characterized in that: silicon substrate with surface; The monocrystalline oxide layer of one or more continuous adjacent; And the interface between one of the monocrystalline oxide layer of surface of silicon and one or more continuous adjacent, it is characterized in that metallic silicon oxide monoatomic layer, and with the monocrystalline oxide layer of one or more continuous adjacent in an adjacent lattice match.
Description of drawings
Fig. 1-2 is the profile that has the clean Semiconductor substrate at interface formed thereon according to the present invention;
Fig. 3-the 6th, the profile that has the Semiconductor substrate at the interface that forms by silicon dioxide layer according to the present invention;
Fig. 7-the 8th, formed according to the present invention in the profile of structural alkaline-earth metal oxide layer shown in Fig. 1-6;
Fig. 9-the 12nd, formed according to the present invention in the profile of structural perovskite shown in Fig. 1-8;
Figure 13 is the end view of the atomic structure of an embodiment of each layer shown in Figure 12 according to the present invention;
Figure 14 is the vertical view of said interface along the AA line among Figure 13;
Figure 15 is the vertical view along the AA line of Figure 13, comprises the adjacent atom layer of said interface and substrate.
Embodiment
In order between silicon (Si) substrate and one or more monocrystalline oxide layer, to form novel interface, can use distinct methods.Regard to down with Si substrate with to have silicon dioxide (SiO on its surface with clean surface
2) the Si substrate provide several examples to start with.SiO
2Be amorphous rather than monocrystalline,, be desirable to provide monocrystalline oxide as the interface for the additional monocrystal material of growth on substrate.
Now referring to each accompanying drawing, the similar similar numeral of member among each figure, Fig. 1 and 2 shows the semiconductor structure that comprises the Si substrate 10 with clean surface 12.Clean (2 * 1) surface 12 can obtain with any conventional cleaning method, for example is used in SiO under the temperature that is greater than or equal to 850 ℃
2The pyrolysis absorption method, or utilize in ultra high vacuum, be greater than or equal under 300 ℃ the temperature, from the method for Si (1 * 1) the surface removal hydrogen of hydrogen termination.The hydrogen termination method is a kind of known method, and wherein the hydrogen loosely is bonded on the dangling bonds of surperficial 12 place's silicon atoms, thereby finishes crystalline texture.Can pass through at O
2Dividing potential drop is less than or equal to 1 * 10
-9In the growth room of millibar, be less than or equal under 900 ℃ the temperature, giving metal, Si and the O of surface 12 supply controlled quentity controlled variables simultaneously or successively
2, the interface 14 of formation crystalline material.Being applied to the metal that will form interface 14 on the surface 12 can be any metal, but in a preferred embodiment, is alkaline-earth metal, for example barium (Ba) or strontium (Sr).
Using Ba, Si and O
2When the synthetic that forms barium, silicon and oxygen is done interface 14, known and reflection high energy electron diffraction (RHEED) the technical monitoring growth can original position used in field under utilizing, so-called original position is used and is meant can carries out step of exposure simultaneously in the growth room.Use RHEED technology for detection or detection in this technology, to pass through the atomic layer of the synthetic of formation barium, silicon and oxygen, change into the surface crystallization structure of strong and sharp striped fast.Nature, should be understood that the manufacturing process that provides special after, needn't carry out the RHEED technology to each substrate.
To introduce the novel atomic structure at interface 14 in the following paragraph.
Those skilled in the art will appreciate that the temperature and pressure given at these technologies is applicable to the specific embodiment of being introduced, but the invention is not restricted to specific temperature or pressure limit.
Referring to Fig. 3-6, other method comprises forming to have surface 12 and the SiO on it
2The Si substrate 10 of layer 16.SiO
2Layer 16 can be that Si substrate 10 is exposed to the natural oxide that the back exists naturally in the air (oxygen), maybe can with for example on surface 12 heat to apply the known controlled way in affiliated field such as (arrow) oxygen specifically created.At least in one of embodiment of two suggestions, can followingly form novel interface 14: under ultra high vacuum, under 700-900 ℃, to SiO
2The surface 18 of layer 16 applies alkaline-earth metal.More specifically say, with Si substrate 10 and amorphous SiO
2Layer 16 is heated to and is lower than SiO
2The temperature (generally being lower than 900 ℃) of the sublimation temperature of layer 16.This process can be finished in MBE chamber, or can then, it can be delivered to the growth room, and finish heating to major general Si substrate 10 localized heating in compartment.Si substrate 10 is suitably heated, and after the pressure in the growth room suitably reduces, has SiO with on it
2It better is metal beam such as alkaline-earth metal that the surface 12 of layer 16 Si substrate 10 is exposed to, as shown in Figure 5.In a preferred embodiment, bundle is Ba or the Sr that produces by resistance heating effusion cell or e beam evaporation source.In specific example, Si substrate 10 and SiO
2It is intrafascicular that layer 16 is exposed to Ba.Ba and SiO
2In conjunction with, SiO
2Layer 16 synthetic of being made up of barium, silicon and oxygen that changes into crystal form are the interface 14 of feature.Perhaps, in ultra high vacuum, alkaline-earth metal is provided at low temperatures surface 18, and 700-900 ℃ of annealing.
After interface 14 forms, on the surface at interface 14, can form one or more layers monocrystalline oxide.Yet for example optional alkaline-earth metal oxide layer such as BaO or SrO can place between interface 14 and the monocrystalline oxide.This alkaline earth oxide provides low-k (favourable for some application such as for example memory cell), can also prevent that block moves to the Si substrate 10 from monocrystalline oxide.
Referring to Fig. 7 and 8, by being less than or equal under 700 ℃ the temperature, and at O
2Dividing potential drop is less than or equal to 1 * 10
-5Under the condition of millibar, while or alternate supplies alkaline-earth metal and oxygen can form alkaline-earth metal oxide layer 22 on the surface 20 at interface 14.The thickness of this alkaline earth oxide 22 for example can be the 50-500 dust.
Referring to Fig. 9-12, be less than or equal in partial pressure of oxygen and be lower than 1 * 10
-5Under the condition of millibar, be less than or equal under 700 ℃ the temperature, simultaneously or transition metal such as alternate supplies alkaline earth oxide, oxygen and for example titanium, for example can on the surface 20 at interface 14 or surface 24, form monocrystalline oxide layer 26 such as alkaline-earth metal perovskite at alkaline-earth metal oxide layer 22.The thickness of this monocrystalline oxide layer 26 for example can be the 50-1000 dust, and basically with beneath interface 14 or alkaline earth oxide 22 lattice match.Should be understood that in other embodiments monocrystalline oxide layer 26 can be one or more layers.
Referring to Figure 13, the figure shows the end view (＜110〉direction see) of the atomic structure of Si substrate 10, interface 14 and alkaline-earth metal oxide layer 26.For the purpose of showing, show this structure with from big to small relative size among the figure and comprise barium atom 30, silicon atom 32, oxygen atom 34 and titanium atom 36.Si substrate 10 includes only silicon atom 32.Interface 14 comprises metallic atom (in a preferred embodiment, being expressed as barium atom 30), silicon atom 32 and oxygen atom 34.Alkaline-earth metal oxide layer 26 comprises barium atom 30, oxygen atom 34 and titanium atom 36.
Referring to Figure 14, this figure is the vertical view along the line AA of Figure 13, shows the arranging situation of barium, silicon and oxygen atom 30,32 and 34.
Referring to Figure 15, this figure is the vertical view along the line AA of Figure 13, shows the last atomic layer 11 of interface 14 and Si substrate 10.
In the discussion here, establish individual layer and equal 6.8 * 10
14Atom/cm
2, atomic layer is an atomic thickness.As can be seen, the interface 14 shown in each figure comprises single atomic layer, but can be an above atomic layer, and Si substrate 10 and alkaline-earth metal oxide layer can be a plurality of atomic layers.Note, among Figure 13, only show four atomic layers of Si substrate 10 and three atomic layers of alkaline-earth metal oxide layer 26.Interface 14 comprises semi-simple layer alkaline-earth metal and half monolayer silicon and individual layer oxygen.Each barium atom 30 basically with Si substrate 10 in four silicon atoms 32 uniformly-spaced.Silicon atom 32 in the interface 14 is in line basically, and＜110〉between alkaline earth metal atom, uniformly-spaced arrange on the direction.In the last atomic layer in the Si substrate 10, each silicon atom 32 is bonded on the oxygen atom 34 in the interface 14, and each silicon atom 32 in the interface 14 is bonded on two oxygen atoms 34 at interface 14.Interface 14 is included in 2 * 1 structures on Si substrate 10 (001) face,＜110 direction 1 * structure and＜110 each row of barium, silicon and oxygen atom 30,32 and 34 of direction 2 * structure.
Here introduced thin crystalizing interface 14 with silicon 10.Interface 14 can comprise monoatomic layer.Utilize thin interface 14 can realize transistor application preferably, because do not comprise the electric coupling of bottom oxide layer and Si substrate 10, and because in the processing procedure, its crystallinity of the easier maintenance of atom is so interface 14 is more stable.
Claims (37)
1. semiconductor structure is characterized in that:
Silicon substrate;
One or more layers monocrystalline oxide;
Interface between silicon substrate and one or more layers monocrystalline oxide, said interface is a feature with the monoatomic layer crystalline material with the lattice constant match of silicon, said crystalline material is a feature with silicon, oxygen and metal.
2. according to the semiconductor structure of claim 1, wherein one or more layers monocrystalline oxide comprises the oxide layer that forms in abutting connection with said interface, this oxide layer have with the interface in metallic atom adjacent and＜001 first oxygen atom aimed at it of direction, also have with the interface in silicon atom adjacent and＜001 second oxygen atom aimed at it of direction.
3. according to the semiconductor structure of claim 1, wherein the atomic layer at said interface is the structure that comprises metallic atom, silicon atom and oxygen atom by relative size from big to small, as shown in figure 14.
4. according to the semiconductor structure of claim 1, the atomic layer of wherein said interface and the silicon substrate adjacent with said interface is the structure that comprises metallic atom, silicon atom and oxygen atom by relative size from big to small, as shown in figure 15.
5. according to the semiconductor structure of claim 1, wherein said metal is an alkaline-earth metal.
6. according to the semiconductor structure of claim 5, wherein alkaline-earth metal is selected from barium and strontium.
7. according to the semiconductor structure of claim 1, wherein the atomic layer at said interface comprises:
Semi-simple layer alkaline-earth metal;
Half monolayer silicon; And
Individual layer oxygen.
8. according to the semiconductor structure of claim 7, wherein silicon substrate comprises one deck silicon atom adjacent with the interface, and four silicon atoms in each alkaline earth metal atom in the atomic layer at said interface and the silicon substrate uniformly-spaced.
9. semiconductor structure according to Claim 8, wherein said interface be included in 2 * 1 structures on (001) face of silicon substrate,＜111 direction 1 * structure and＜110 each row atom of direction 2 * structure.
10. according to the semiconductor structure of claim 9, the silicon atom in its median surface becomes a row, and＜110 direction uniformly-spaced arrangement between two alkaline earth metal atoms.
11. according to the semiconductor structure of claim 1, on the oxygen atom of each silicon atom bonding in the atomic layer of wherein adjacent silicon substrate in the interface, on two oxygen atoms of each silicon atom bonding in the interface in the interface with the interface.
12. according to the semiconductor structure of claim 1, wherein at (100) of silicon substrate face, for＜110〉each atom on the direction, quadrature＜110〉direction two atoms are arranged.
13. a semiconductor structure is characterized in that:
Silicon substrate with surface;
The monocrystalline oxide layer; And
With the metallic silicon oxide is one deck of feature, and this layer forms the interface in surface of silicon and monocrystalline oxide interlayer.
14. according to the semiconductor structure of claim 13, wherein said layer is a monoatomic layer.
15. according to the semiconductor structure of claim 13, wherein said metal comprises alkaline-earth metal.
16. according to the semiconductor structure of claim 15, wherein alkaline-earth metal is selected from barium and strontium.
17. semiconductor structure according to claim 13, wherein said material comprises the oxide layer that forms in abutting connection with said interface, this oxide layer have with the interface in metallic atom adjacent and＜001 the oxygen atom aimed at it of direction, also have with the interface in silicon atom adjacent and＜001 the oxygen atom aimed at it of direction.
18. according to the semiconductor structure of claim 13, wherein the atomic layer at said interface is the structure that comprises metallic atom, silicon atom and oxygen atom by relative size from big to small, as shown in figure 14.
19. according to the semiconductor structure of claim 13, wherein the atomic layer of the atomic layer at said interface and the silicon substrate adjacent with said interface is the structure that comprises metallic atom, silicon atom and oxygen atom by relative size from big to small, as shown in figure 15.
20. according to the semiconductor structure of claim 13, wherein the atomic layer at said interface comprises:
Semi-simple layer alkaline-earth metal;
Half monolayer silicon; And
Individual layer oxygen.
21. according to the semiconductor structure of claim 20, wherein silicon substrate comprises one deck silicon atom adjacent with the interface, four silicon atoms in each alkaline earth metal atom in the atomic layer adjacent with said substrate and the silicon substrate uniformly-spaced.
22。According to the semiconductor structure of claim 21, wherein said interface is included in 2 * 1 structures on (001) face of silicon substrate,＜111 direction 1 * structure and＜110 each row atom of direction 2 * structure.
23. according to the semiconductor structure of claim 22, the silicon atom in its median surface becomes a row, and＜110〉direction uniformly-spaced arrangement between two alkaline earth metal atoms.
24. according to the semiconductor structure of claim 13, on the oxygen atom of each silicon atom bonding in the atomic layer of wherein adjacent silicon substrate in the interface, on two oxygen atoms of each silicon atom bonding in the interface in the interface with the interface.
25. according to the semiconductor structure of claim 13, wherein at (100) of silicon substrate face, for＜110〉each atom on the direction, quadrature＜110〉direction two atoms are arranged.
26. a semiconductor structure is characterized in that:
Silicon substrate with surface;
The monocrystalline oxide layer of one or more continuous adjacent; And
Interface between one of monocrystalline oxide layer of surface of silicon and one or more continuous adjacent is characterized in that metallic silicon oxide monoatomic layer, and with the monocrystalline oxide layer of one or more continuous adjacent in an adjacent lattice match.
27. according to the semiconductor structure of claim 26, wherein said metal comprises alkaline-earth metal.
28. according to the semiconductor structure of claim 27, wherein alkaline-earth metal is selected from barium and strontium.
29. semiconductor structure according to claim 26, the monocrystalline oxide layer of wherein one or more continuous adjacent comprises the oxide layer that forms in abutting connection with said interface, this oxide layer have with the interface in metallic atom adjacent and＜001 the oxygen atom aimed at it of direction, also have with the interface in silicon atom adjacent and＜001 the oxygen atom aimed at it of direction.
30. according to the semiconductor structure of claim 26, wherein the atomic layer at said interface is the structure that comprises metallic atom, silicon atom and oxygen atom by relative size from big to small, as shown in figure 14.
31. according to the semiconductor structure of claim 26, wherein the atomic layer of the atomic layer at said interface and the silicon substrate adjacent with said interface is the structure that comprises metallic atom, silicon atom and oxygen atom by relative size from big to small, as shown in figure 15.
32. according to the semiconductor structure of claim 26, wherein the atomic layer at said interface comprises:
Semi-simple layer alkaline-earth metal;
Half monolayer silicon; And
Individual layer oxygen.
33. according to the semiconductor structure of claim 32, wherein silicon substrate comprises one deck silicon atom adjacent with the interface, four silicon atoms in each alkaline earth metal atom in the atomic layer at said interface and the silicon substrate uniformly-spaced.
34. according to the semiconductor structure of claim 33, wherein said interface is included in 2 * 1 structures on (001) face of silicon substrate,＜111 direction 1 * structure and＜110 each row atom of direction 2 * structure.
35. according to the semiconductor structure of claim 34, the silicon atom in its median surface becomes a row, and＜110〉direction uniformly-spaced arrangement between two alkaline earth metal atoms.
36. according to the semiconductor structure of claim 26, on the oxygen atom of each silicon atom bonding in the atomic layer of wherein adjacent silicon substrate in the interface, on two oxygen atoms of each silicon atom bonding in the interface in the interface with the interface.
37. according to the semiconductor structure of claim 26, wherein at (100) of silicon substrate face, for＜110〉each atom on the direction, quadrature＜110〉direction two atoms are arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001202189A CN1145195C (en) | 2000-07-13 | 2000-07-13 | Semiconductor structure having crystalline alkaline earth metal oxide interface with silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001202189A CN1145195C (en) | 2000-07-13 | 2000-07-13 | Semiconductor structure having crystalline alkaline earth metal oxide interface with silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1334595A CN1334595A (en) | 2002-02-06 |
| CN1145195C true CN1145195C (en) | 2004-04-07 |
Family
ID=4588157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB001202189A Expired - Fee Related CN1145195C (en) | 2000-07-13 | 2000-07-13 | Semiconductor structure having crystalline alkaline earth metal oxide interface with silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1145195C (en) |
-
2000
- 2000-07-13 CN CNB001202189A patent/CN1145195C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1334595A (en) | 2002-02-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1167105C (en) | Manufacture of semiconductor structure with steady crystalizing interface with silicon | |
| CN1185689C (en) | Semiconductor structure with crystallzed alkaline-earth metal silicon-nitrogen compound/oxide and silicon interface | |
| US6241821B1 (en) | Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon | |
| US6248459B1 (en) | Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon | |
| CN1140917C (en) | Method of making semiconductor structure containing metal oxide interface of silicone | |
| US5801105A (en) | Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film | |
| US6224669B1 (en) | Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon | |
| JP3193302B2 (en) | Film structure, electronic device, recording medium, and method of manufacturing ferroelectric thin film | |
| US7364989B2 (en) | Strain control of epitaxial oxide films using virtual substrates | |
| JPH0799252A (en) | Manufacture of ferroelectric film and semiconductor device using manufacture thereof | |
| JP2000067650A (en) | Ferroelectrics thin film element and its manufacture | |
| US6821338B2 (en) | Particle beam biaxial orientation of a substrate for epitaxial crystal growth | |
| CN1145195C (en) | Semiconductor structure having crystalline alkaline earth metal oxide interface with silicon | |
| CN1140914C (en) | Method for mfg. semioconductor structure having crystalline alkaline earth metal oxide interface with silicon | |
| US20030019668A1 (en) | Particle beam biaxial orientation of a substrate for epitaxial crystal growth | |
| Gao et al. | Effects of substrate orientation and cooling rate on microstructure of PbTiO3 thin films grown by metal-organic chemical vapor deposition | |
| US6586260B2 (en) | Single c-axis PGO thin film electrodes having good surface smoothness and uniformity and methods for making the same | |
| Tejedor et al. | Effect of SiO2 buffer layers on the structure of SrTiO3 films grown on silicon by pulsed laser deposition | |
| Chae et al. | Initial Stage Nucleation and Growth of Epitaxial SrRuO 3 Thin Films on (0 0 1) SrTiO 3 Substrates | |
| CN1217036C (en) | Method for preparing crystalline alkaline earth metal oxide on silicon substrate | |
| Kuh et al. | Sol-Gel Derived Pb (Sc0. 5Nb0. 5) O3 Thin Films: Processing and Dielctric Properties | |
| Funakubo et al. | Low Temperature Preparation of High-Quality Pb (Zr, Ti) O3 Films by Metal Organic Chemical Vapor Deposition with High Reproducibility | |
| Akazawa | Intermediate crystalline states produced by isothermal annealing of sputter-deposited a‐Si films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: FREESCALE SEMICONDUCTOR INC. Free format text: FORMER OWNER: MOTOROLA, INC. Effective date: 20050617 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20050617 Address after: Texas USA Patentee after: Fisical Semiconductor Inc. Address before: Illinois Instrunment Patentee before: Motorola Inc. |
|
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1044627 Country of ref document: HK |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040407 Termination date: 20150713 |
|
| EXPY | Termination of patent right or utility model |