CN114514337A

CN114514337A - Support stand apparatus and method for substrate processing

Info

Publication number: CN114514337A
Application number: CN201980100764.9A
Authority: CN
Inventors: 苏海尔·安瓦尔; 古田学; 兰吉特·英德拉吉特·辛德
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2019-09-26
Filing date: 2019-09-26
Publication date: 2022-05-17
Also published as: KR20220065840A; JP7385023B2; WO2021061123A1; JP2022549827A

Abstract

Aspects of the present disclosure relate to support pedestal apparatus and methods for substrate processing, such as plasma processing chambers. In one embodiment, a substrate processing chamber includes a chamber body. The chamber body includes one or more sidewalls, and each of the one or more sidewalls includes an inner surface. The substrate processing chamber further comprises: a base having a support surface; a processing volume above the pedestal; and a lower space below the base. The substrate processing chamber also includes a support mounted to the inner surface of a sidewall of the one or more sidewalls. The stent includes a first end, a second end, and a longitudinal length between the first end and the second end. The bracket also includes a gas opening formed in the bracket between the first end and the second end. The gas openings allow gas to flow through the gas openings.

Description

Support stand apparatus and method for substrate processing

Technical Field

Aspects of the present disclosure generally relate to support pedestal apparatus and methods for substrate processing, such as plasma processing chambers.

Background

Substrate processing chambers such as Plasma Enhanced Chemical Vapor Deposition (PECVD) processing chambers may be used to deposit thin films on substrates to form electronic devices. The substrate processing chamber is cleaned to remove material buildup resulting from processing operations. During cleaning, a cleaning gas is introduced into the substrate processing chamber. The flow of the cleaning gas is not uniform throughout the process chamber, resulting in the cleaning gas being concentrated in certain areas of the process chamber. The non-uniform flow and resulting concentration of the cleaning gas in certain areas requires longer cleaning times to effectively clean the entire substrate processing chamber. The uneven flow of the cleaning gas also increases the amount of cleaning gas required to effectively clean the substrate processing chamber, resulting in increased consumption of the cleaning gas.

The longer cleaning time and increased cleaning gas consumption result in operation delays, increased cleaning costs, and reduced throughput and yield of the substrate processing chamber.

Accordingly, there is a need for an apparatus and method that facilitates faster cleaning rates, less cleaning gas consumption, increased cost efficiency, and increased throughput.

Disclosure of Invention

In one embodiment, a substrate processing chamber includes a chamber body. The chamber body includes one or more sidewalls, and each of the one or more sidewalls includes an inner surface. The substrate processing chamber further comprises: a base having a support surface; a processing volume above the pedestal; and a lower space below the base. The substrate processing chamber also includes a support mounted to the inner surface of a sidewall of the one or more sidewalls. The stent includes a first end, a second end, and a longitudinal length between the first end and the second end. The bracket further comprises a vertical portion and a horizontal portion. The horizontal portion includes at least one surface parallel to a support surface of the base. The bracket also includes a gas opening formed in the bracket between the first end and the second end. The gas openings allow gas to flow from the process space through the gas openings and to the lower space. The substrate processing chamber also includes a shadow frame movable into and out of contact with the support.

In one embodiment, a method of operating a substrate processing chamber includes processing a substrate disposed on a support surface of a susceptor. The pedestal is disposed within the chamber body. The method also includes removing the substrate from the support surface. The method also includes directing one or more cleaning gases over the support surface of the pedestal and into a gas opening formed in a pedestal mounted to the chamber body. The gas opening is disposed between the first end and the second end of the support.

In one embodiment, a method of operating a substrate processing chamber includes processing a substrate disposed in a processing volume, wherein a shadow frame is disposed at a gap from one or more supports mounted to a chamber body. The method also includes moving the shadow frame into contact with the one or more supports mounted to the chamber body. The method also includes flowing one or more cleaning gases into the processing volume. The flowing one or more cleaning gases includes flowing the one or more cleaning gases through one or more gas openings formed in each of the one or more shelves.

Drawings

So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.

Figure 1A is a schematic cross-sectional view of a substrate processing chamber according to one embodiment.

FIG. 1B is an enlarged schematic view of a portion of the substrate processing chamber shown in FIG. 1A, according to one embodiment.

FIG. 1C is a schematic top view of the substrate processing chamber shown in FIG. 1A, according to one embodiment.

Fig. 1D is an isometric schematic view of the second bracket shown in fig. 1A-1C according to one embodiment.

FIG. 1E is an enlarged isometric top view schematic diagram of the second bracket shown in FIG. 1D according to one embodiment.

FIG. 1F is an enlarged isometric bottom schematic view of the second bracket shown in FIG. 1D according to one embodiment.

Figure 2A is a schematic top view of a substrate processing chamber according to one embodiment.

Fig. 2B is an isometric schematic view of the second bracket shown in fig. 2A according to one embodiment.

Fig. 2C is an enlarged isometric top view schematic diagram of the second bracket shown in fig. 2B according to one embodiment.

Fig. 2D is an enlarged isometric bottom view schematic diagram of the second bracket shown in fig. 2C according to one embodiment.

Figure 3 is a schematic top view of a substrate processing chamber according to one embodiment.

Figure 4 is a schematic top view of a substrate processing chamber according to one embodiment.

To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of the embodiments may be beneficially incorporated in other embodiments without further recitation.

Detailed Description

Fig. 1A is a schematic cross-sectional view of a substrate processing chamber 100 according to one embodiment. The substrate processing chamber 100 may be, for example, a plasma processing chamber. In one example, the substrate processing chamber 100 is a plasma processing chamber used as part of a PECVD system. The substrate processing chamber 100 may be operable to perform a deposition process for an encapsulation layer by a PECVD process. It is noted that the substrate processing chamber 100 of fig. 1A is merely an exemplary apparatus that may be used to form electronic devices on a substrate. One suitable chamber for a PECVD process is available from Applied Materials, Inc., Santa Clara, Calif. It is contemplated that other deposition chambers (including those from other manufacturers) may be used with aspects of the present disclosure.

The substrate processing chamber 100 includes one or more sidewalls 102 (four sidewalls 102 are shown, for example, in fig. 1C) and a bottom 104 that define a chamber body 105 of the substrate processing chamber 100. The chamber body 105 and lid assembly 130 serve to define a processing volume 108 of the interior volume of the substrate processing chamber 100. The lid assembly 130 includes a backing plate 106 and a gas distribution plate or diffuser 110. The diffuser 110 includes gas openings 124 formed therethrough to introduce gases into the processing volume 108, and the diffuser 110 may also be referred to as a faceplate or showerhead.

The diffuser 110 is coupled to the backing plate 106, and the plenum 117 is located between the backing plate 106 and the diffuser 110. The plenum 117 defines a gap between the backing plate 106 and the diffuser 110.

The backing plate 106 includes a plurality of gas openings 101A-101C (three are shown in FIG. 1A) formed therethrough. Each of the plurality of gas openings 101A-101C is fluidly connected to one of the plurality of conduits 116A-116C. A process gas source 112 is fluidly connected to the first gas opening 101A by a first conduit 116A to provide process gas to the plenum 117.

Gas from the plenum 117 flows through the gas openings 124 of the diffuser 110 to the process volume 108. A plurality of remote plasma sources 118A-118C (such as inductively coupled remote plasma sources) are coupled to the plurality of conduits 116A-116C. A Radio Frequency (RF) power source 122 is coupled to the backing plate 106 and/or to the diffuser 110 to provide RF power to the diffuser 110. The RF power source 122 is used to generate an electric field between the diffuser 110 and the pedestal 120, which may be referred to as a substrate support or pedestal. The electric field facilitates the formation of a plasma from the gas present between the diffuser 110 and the pedestal 120 within the processing volume 108. Various RF frequencies may be used, such as frequencies between about 0.3MHz and about 200 MHz. In one example, the RF power source 122 provides power to the diffuser 110 at a frequency of 13.56 MHz.

The backing plate 106 rests on a cover plate 126, which rests on the sidewall 102 of the substrate processing chamber 100. A seal 128, such as an elastomeric O-ring, is provided between the sidewall 102 and the cover plate 126. The cover plate 126, the backing plate 106, and components connected thereto (such as the diffuser 110 and the plurality of conduits 116A) may define a lid assembly 130. The lid assembly 130 may also include portions located thereon or attached thereto, such as the RF power source 122 and the remote plasma sources 118A-118C. The lid assembly 130 may be removed from the chamber body 105 and the lid assembly 130 may be aligned with the chamber body 105 by the index pins 131.

Still referring to the substrate processing chamber 100 of fig. 1A, the processing volume 108 is accessed through a sealable slit valve opening 132 formed through a sidewall of the sidewalls 102. Thus, the substrate 134 may enter and exit the processing volume 108 through the slit valve opening 132. The pedestal 120 includes a support surface 136 to support the substrate 134 thereon, with a stem 138 coupled to a lift system 140 to raise and lower the pedestal 120.

The substrate processing chamber 100 includes a mask frame 142 and a shadow frame 103. During processing, the shadow frame 103 and/or the mask frame 142 may be placed over the perimeter of the substrate 134. The shadow frame 103 and/or the mask frame 142 may include a plurality of screens, such as mask screens, coupled thereto that include fine openings corresponding to devices or layers formed on the substrate 134. The present disclosure contemplates that the mask frame 142 or the shadow frame 103 may be omitted. The present disclosure also contemplates that the mask frame 142 and the shadow frame 103 may be combined into a single component.

Substrate lift pins 144 are movably disposed through the pedestal 120 to move the substrate 134 into and out of the support surface 136 to facilitate substrate transfer. The susceptor 120 may also include heating and/or cooling elements to maintain the susceptor 120 and the substrate 134 positioned thereon at a desired temperature.

The support member 148 is also shown as being at least partially disposed in the processing volume 108. The support members 148 may also serve as alignment and/or positioning means for the shadow frame 103 and/or the mask frame 142. The support member 148 is coupled to a motor 150 operable to move the support member 148 relative to the pedestal 120 and thereby position the shadow frame 103 and/or the mask frame 142 relative to the substrate 134. A vacuum pump 152 is coupled to the substrate processing chamber 100 to control the pressure within the processing volume 108.

The substrate processing chamber 100 includes one or more mounts 109A-109D mounted to the inner surface 141 of the sidewall 102 (fig. 1C shows four mounts 109A-109D mounted to four sidewalls 102). During processing of a substrate (such as substrate 134), the shadow frame 103 is raised above the supports 109A-109D to be disposed at a gap with each of the supports 109A-109D such that the shadow frame 103 does not contact the supports 109A-109D. During processing, the process gas flows from the process space 108 through the gaps between the shadow frame 103 and the holders 109A to 109D and into the lower space 111. In processing a substrate, such as after processing the substrate 134, the substrate processing chamber 100 may be cleaned. In one example, the substrate 134 is removed from the substrate processing chamber 100 after processing and before cleaning. After the substrate 134 is processed, the shadow frame 103 is moved to be in contact with the holders 109A to 109D by lowering the shadow frame 103 relative to the holders 109A to 109D. The shadow frame 103 is lowered away from the diffuser 110 and toward the bottom 104 of the chamber body 105. One or more of the rods 138, the pedestal 120, the lift system 140, the support members 148, and/or the motors 150 may be used to move (e.g., raise and/or lower) the shadow frame 103 and/or the mask frame 142. The brackets 109A to 109D support the shadow frame 103 thereon.

The substrate processing chamber 100 is cleaned while the shadow frame 103 is in contact with the supports 109A-109D. During cleaning of the substrate processing chamber 100, a cleaning gas 107 from a cleaning gas source 119 may be providedA plurality of remote plasma sources 118A-118C. In one example, the cleaning gas 107 includes a fluoride material, such as NF₃、F₂And/or SF₆. The first remote plasma source 118A is fluidly connected to the first gas opening 101A. The second remote plasma source 118B is fluidly connected to the second gas opening 101B of the backing plate 106. The third remote plasma source 118C is fluidly connected to the third gas opening 101C of the backing plate 106.

As described above, the shield frame 103 is movable into and out of contact with the brackets 109A to 109D. When in contact with the supports 109A-109D, the shadow frame 103 of the substrate processing chamber 100 is in a cleaning position. When the shadow frame 103 is disposed at the gap with the supports 109A to 109D so that the shadow frame 103 does not contact the supports 109A to 109D, the shadow frame 103 of the substrate processing chamber is at the processing position.

When excited, a remote plasma is formed from which dissociated cleaning gas species are generated. A plasma of cleaning gas 107 is provided to the processing volume 108 through the plurality of conduits 116A-116C and through the gas openings 124 formed in the diffuser 110 to clean components of the substrate processing chamber 100, such as the interior surfaces 141 of the sidewalls 102. The cleaning gas may be further excited by the provided RF power source 122 to flow through the diffuser 110 to reduce recombination of dissociated cleaning gas species.

As shown in fig. 1A, the cleaning gas 107 flows from a plurality of remote plasma sources 118A-118C to a plurality of conduits 116A-116C. The cleaning gas 107 flows from the plurality of conduits 116A-116C, through the plurality of gas openings 101A-101C of the backing plate 106, and into the plenum 117. The cleaning gas 107 flows from the plenum 117, through the gas openings 124, and into the process volume 108. The cleaning gas 107 cleans components of the substrate processing chamber 100, such as the interior surface 141 of the sidewall 102 and/or the support surface 136 of the pedestal 120.

The cleaning gas 107 flows from the processing volume 108 above the pedestal 120, through the supports 109A-109D, and into the lower volume 111 of the substrate processing chamber 100 below the pedestal 120. The cleaning gas 107 flows through the shelves 109A-109D by flowing through gaps 113 provided at the corners of the chamber body 105 and through

gas openings

115A, 115B formed in one or more of the shelves 109A-109D. The gap 113 and

gas openings

115A, 115B are shown in FIG. 1C. The cleaning gas 107 flows out from the lower space 111 and is exhausted from the substrate processing chamber 100. The cleaning gas 107 is exhausted from the lower space 111 through an exhaust port 190 formed in the bottom 104 using a vacuum pump 152.

In one example, the first gas opening 101A is optionally configured to provide a process gas and a cleaning gas to a plenum 117 of the substrate processing chamber 100. The second gas opening 101B and the third gas opening 101C are configured to provide a cleaning gas to the plenum 117 of the substrate processing chamber 100.

The substrate processing chamber 100 includes a plurality of shelves 109A-109D (e.g., four shelves are shown in fig. 1C). Fig. 1A shows a first bracket 109A and a second bracket 109B. Fig. 1C shows a third bracket 109C and a fourth bracket 109D.

FIG. 1B is an enlarged partial schematic view of the substrate processing chamber 100 shown in FIG. 1A, according to one embodiment. The second bracket 109B includes a vertical portion 121 and a horizontal portion 123. The vertical portion 121 includes an inward facing surface 125 and an outward facing surface 127. The present disclosure contemplates the use of variations of the terms "inward" and "outward" as used herein with respect to one side of a stent (such as the second stent 109B). For example, the terms "inward" and "outward" variants will be used with respect to the center of the substrate processing chamber 100 disposed on one side of the second support 109B. Horizontal portion 123 includes an upper surface 129, a lower surface 133, and an inward surface 135 extending between lower surface 133 and upper surface 129. The inward facing surface 135 is circular. The lower surface of the shadow frame 103 is in contact with the upper portion of the inward surface 135 of the second bracket 109B.

The second bracket 109B includes one or more protrusions 137 that protrude outward from the outer surface 127 of the vertical portion 121. The one or more protrusions 137 protrude into one or more recesses 139 formed in the inner surface 141 of the sidewall 102. The horizontal portion 123 projects at least partially inwardly from the inward surface 125 of the vertical portion 121 and projects from the inner surface 141 toward the base 120. The upper surface 129 and the lower surface 133 of the horizontal portion 123 are substantially parallel to the support surface 136 of the base 120.

The second bracket 109B is mounted to the sidewall 102. The outer surface 127 interfaces and contacts the inner surface 141 of the sidewall 102. One or more protrusions 137 facilitate mounting of the second bracket 109B to the sidewall 102. One or more recessed surfaces 143 are formed in the inward-facing surface 125. One or more openings 145 extend from the recessed surface 143 and through the protrusion 137 to receive fasteners (e.g., screws, studs, and/or bolts). Fasteners in the openings 145 facilitate mounting the second bracket 109B to the sidewall 102. The lower surface of each projection 137 rests on a shoulder of a respective recess 139 formed in the side wall 102.

The present disclosure contemplates that each bracket of the plurality of brackets 109A-109D shown in fig. 1C may include features, aspects, components, and/or characteristics of the second bracket 109B.

Figure 1C is a schematic top view of the substrate processing chamber 100 shown in figure 1A, according to one embodiment. The chamber body 105 includes four sidewalls 102A-102D that define the rectangular shape of the chamber body 105. Each of the first bracket 109A, the second bracket 109B, the third bracket 109C, and the fourth bracket 109D is mounted to a respective one of the four side walls 102, and is disposed parallel to the respective one of the four side walls 102. The first bracket 109A includes a gas opening 115A formed therein, and the second bracket 109B includes a gas opening 115B formed therein. A plurality of brackets 109A to 109D are disposed around the base 120 in a rectangular manner. Gaps 113 are provided at corners of the chamber body 105 where two of the sidewalls 102 meet (four gaps 113 are shown in figure 1C). Gaps 113 are provided between respective ends of adjacent ones of the plurality of brackets 109A-109D. By way of example, one of the gaps 113 is defined by one end of the first bracket 109A, one end of the third bracket 109C, a corner of the shadow frame 103, and an intersection 146 of two of the sidewalls 102.

At least a portion of each

gas opening

115A, 115B is disposed between the shadow frame 103 and the sidewall 102 of the chamber body 105 in a horizontal plane, for example, as shown in figure 1C.

As described above, during cleaning, such as cleaning gas, may flow through the gap 113, the gas openings 115A formed in the first bracket 109A, and the gas openings 115B formed in the second bracket 109B.

During cleaning, the shadow frame 103 has been moved into contact with the horizontal portion 123 of each bracket 109A to 109D (as shown in fig. 1A and 1B). Therefore, the gap between the shadow frame 103 and the horizontal portion 123 existing during the process is closed during the cleaning. The cleaning gas 107 flowing in the process space 108 is thus directed through the support surface 136, through the upper surface of the shadow frame 103. Portions of the cleaning gas 107 flowing in the process space 108 are simultaneously directed into the

gas openings

115A, 115B and the gap 113, respectively. Portions of the cleaning gas 107 flow through the

gas openings

115A, 115B and the gap 113, respectively, and into the lower space 111. For example, a first portion of the cleaning gas 107 may flow through the gas opening 115A and into the lower space 111, while a second portion of the cleaning gas 107 may flow through one of the gaps 113 and into the lower space 111.

The chamber body 105 has a pair of

long sides

147C, 147D and a pair of

short sides

147A, 147B shorter than the

long sides

147C, 147D. In one example, the plurality of gas openings 101A-101C and the plurality of conduits 116A-116C of the backing plate 106 are vertically aligned with horizontal positions 188A-188C. The supports 109A, 109B having

gas openings

115A, 115B formed therein are mounted on the sidewall 102 furthest from the plurality of gas openings 101A-101C configured to introduce a cleaning gas into the process volume 108.

Brackets

109A, 109B formed with

gas openings

115A, 115B are attached to

short sides

147A, 147B shorter than

long sides

147C, 147D.

In one embodiment, which may be combined with other embodiments, the first long side 147C is an electrical connection side and the second long side 147D is a water connection side of the chamber body 105. The first short side 147A is the slit valve side and the second short side 147B is the window side of the chamber body 105. The electrical connection side is connected to electrical equipment and the water connection side is connected to a water manifold for delivering water to the substrate processing chamber 100. The slit valve side includes a slit valve opening 132 and the window side includes one or more windows. The supports 109A, 109B, in which the

gas openings

115A, 115B are formed, are mounted on the slit valve side and the window side of the chamber body 105.

Fig. 1D is an isometric schematic view of the second bracket 109B shown in fig. 1A-1C, according to one embodiment. Fig. 1E is an enlarged isometric top view schematic diagram of the second bracket 109B shown in fig. 1D, according to one embodiment. FIG. 1F is an enlarged isometric bottom view schematic view of the second bracket 109B shown in FIG. 1D, according to one embodiment. Fig. 1D to 1F are described together.

The second bracket 109B includes a first end 149, a second end 151, and a longitudinal length LD1 between the first end 149 and the second end 151. The second bracket 109B includes a plurality of recessed surfaces 143. Each of the recessed surfaces 143 includes two or more openings 145 to receive fasteners. The second bracket 109B comprises a rigid body made of a metallic material, such as aluminum partially coated with anodized aluminum. Gas opening 115B is formed in horizontal portion 123 and is disposed between first end 149 and second end 151. The gas openings 115B include slots formed in the inward-facing surface 135 of the horizontal portion 123. The gas openings 115B extend from the inward-facing surface 135 of the horizontal portion 123 to the inward-facing surface 125 of the vertical portion 121. Gas openings 115B extend from upper surface 129 to lower surface 133 of horizontal portion 123.

Horizontal portion 123 and vertical portion 121 each comprise a thickness of 0.25 inches or greater. For horizontal portion 123, the thickness is measured between upper surface 129 and lower surface 133. For the vertical portion 121, the thickness is measured between the inward facing surface 125 and the outer surface 127.

The gas openings 115B define a first inner edge 153 and a second inner edge 154 of the horizontal portion 123. The gas openings 115B include an opening length L between the first inner edge 153 and the second inner edge 154₁. The first and second

inner edges

153, 154 extend inwardly from the inward-facing surface 125 of the vertical portion 121.

Longitudinal length LD₁Greater than 20 inches, such as in the range of 20 inches to 120 inches. In one example, the longitudinal length LD₁Is 65 inches. Length L of opening₁Less than 15 inches, such as in the range of 0.1 inches to 12 inches. In one example, the opening length L₁Is 4 inches. In one example, the opening length L₁Is 12 inches.

Having gas formed thereinThe supports 109A, 109B of the

openings

115A, 115B facilitate uniform distribution of cleaning gases throughout the processing volume 108 of the substrate processing chamber 100 during cleaning. The uniform distribution of the cleaning gas facilitates faster cleaning, reduced consumption of cleaning gas material, lower operating costs, and higher throughput. At an opening length L of 4 inches₁In the example of the

gas openings

115A, 115B for the first and

second legs

109A, 109B, the cleaning time is reduced by 53% compared to a leg without the

gas openings

115A, 115B.

As described above, the shadow frame 103 is in contact with the brackets 109A to 109D during cleaning. The

gas openings

115A, 115B facilitate such configurations with the above benefits (such as uniform distribution of cleaning gas) compared to configurations where the shadow frame 103 is raised above the standoffs 109A-109D during cleaning and at the gaps with the standoffs 109A-109D. The

gas openings

115A, 115B also facilitate the above benefits of introducing at least a portion of the cleaning gas 107 into the processing volume 108 in a configuration that is not vertically aligned with the horizontal center of the support surface 136 of the pedestal 120.

Figure 2A is a schematic top view of a substrate processing chamber 200 according to one embodiment. Aspects of the substrate processing chamber 200 include many of the same aspects, features, components, and characteristics as the substrate processing chamber 100 described above. Aspects of the substrate processing chamber 200 may be used as part of the substrate processing chamber 100 described above.

The first leg 209A includes a gas opening 215A formed therein and the second leg 209B includes a gas opening 215B formed therein. The first support 209A includes many of the same aspects, features, components, and characteristics as the first support 109A described above. The second support 209B includes many of the same aspects, features, components and characteristics as the second support 109B described above.

Fig. 2B is an isometric schematic view of the second bracket 209B shown in fig. 2A, according to an embodiment. Fig. 2C is an enlarged isometric top view schematic diagram of the second bracket 209B shown in fig. 2B, according to one embodiment. Fig. 2D is an enlarged isometric bottom view schematic diagram of the second bracket 209B shown in fig. 2C, according to one embodiment. Fig. 2B to 2D are described together.

Gas opening 215B includes many of the same aspects, features, components, and characteristics as gas opening 115B described above.

The gas opening 215B defines a first inner edge 253 and a second inner edge 254 of the horizontal portion 123. The gas opening 215B includes an opening length L between the first inner edge 253 and the second inner edge 254₂. The first and second

inner edges

253, 254 extend inwardly from the inward-facing surface 125 of the vertical portion 121. The first inner edge 253 and the second inner edge 254 are curved in a horizontal plane. Length L of opening₂Less than 15 inches, such as in the range of 0.1 inches to 12 inches. In one example, the opening length L₂Is 4 inches. In one example, the opening length L₂Is 12 inches.

Figure 3 is a schematic top view of a substrate processing chamber 300 according to one embodiment. Aspects of the substrate processing chamber 300 include many of the same aspects, features, components, and characteristics as the substrate processing chamber 100 described above. Aspects of the substrate processing chamber 300 may be used as part of the substrate processing chamber 100 described above.

A plurality of supports 309A-309D are mounted to each of the four sidewalls 102 of the chamber body 105. Each of the plurality of standoffs 309A-309D includes a plurality of gas openings 315A-315D formed therein. The gas openings 315A-315D on each of the plurality of stents 309A-309D along the longitudinal length LD of each stent₁Spaced apart. The gas openings 315A-315D are spaced apart such that portions 360A-360D of the horizontal portion 123 of each rack are disposed between the respective gas openings 315A-315D of each rack.

Illustratively, the first gas opening 315A of the first bracket 309A is along the longitudinal length LD of the first bracket 309A₁Spaced from the second gas opening 315A. Portion 360A of horizontal portion 123 is disposed between first gas opening 315A and second gas opening 315A of first support 309A.

The portions 360A-360D of each stent may have the same longitudinal length, or may have different longitudinal lengths. The gas openings 315A-315D of each stent may have the same longitudinal length, or may have different longitudinal lengths.

The present disclosure contemplates that a plurality of gas openings 315A-315D may be included on each of the four brackets 309A-309D, as shown in fig. 3. The present disclosure also contemplates that the plurality of gas openings 315A-315D can be included on two of the four legs 309A-309D, such as a first leg 309A of the first short side 147A and a second leg 309B of the second short side 147B.

Figure 4 is a schematic top view of a substrate processing chamber 400 according to one embodiment. Aspects of the substrate processing chamber 400 include many of the same aspects, features, components, and characteristics as the substrate processing chamber 100 described above. Aspects of the substrate processing chamber 400 may be used as part of the substrate processing chamber 100 described above.

A plurality of mounts 409A-409D are mounted to each of the four sidewalls 102 of the chamber body 105. Each of the plurality of brackets 409A-409D includes a plurality of gas openings 415A-415D formed therein. Gas openings 415A-415D on each of the plurality of brackets 409A-409D along the longitudinal length LD of each bracket₁Spaced apart. The gas openings 415A-415D are spaced apart such that portions 460A-460D of the horizontal portion 123 of each rack are disposed between the respective gas openings 415A-415D of each rack. The gas openings 415A-415D of each respective bracket are disposed between the inward-facing surface 135 of the horizontal portion 123 and the inward-facing surface 125 of the vertical portion 121 of the respective bracket. The portions 470A-470D of the horizontal portion 123 of each of the plurality of brackets 409A-409D are disposed inside the respective gas openings 415A-415D.

By way of example, the first gas opening 415A of the first bracket 409A is along the longitudinal length LD of the first bracket 409A₁Spaced from the second gas opening 415A. The portion 460A of the horizontal portion 123 is disposed between the first gas opening 415A and the second gas opening 415A of the first bracket 409A. First and

second gas openings

415A, 415A are disposed between the inward facing surface 135 of the horizontal portion 123 and the inward facing surface 125 of the vertical portion 121 of the first bracket 409A. The first portion 470A of the horizontal portion 123 is disposed inside the first gas opening 415A, and the second portion 123 of the horizontal portion 123The portion 470A is disposed inside the second gas opening 415A.

The portions 460A-460D of each stent may have the same longitudinal length, or may have different longitudinal lengths. The gas openings 415A to 415D of each stent may have the same longitudinal length, or may have different longitudinal lengths.

The present disclosure contemplates that a plurality of gas openings 415A-415D may be included on each of the four brackets 409A-409D, as shown in fig. 4. The present disclosure also contemplates that the plurality of gas openings 415A-415D can be included on two of the four brackets 409A-409D, such as a first bracket 409A of the first short side 147A and a second bracket 409B of the second short side 147B.

The present disclosure contemplates aspects, components, features, and/or characteristics that may be combined with the substrate processing chambers 100-400, the supports 109-409, and/or the gas openings 115-415.

Benefits of the present disclosure include uniform distribution of the cleaning gas; faster cleaning rates; less clean gas material consumption; operating efficiency; reduced operating costs; and increased yield.

Aspects of the present disclosure include a substrate processing chamber having a support; a support having a gas opening formed therein, the gas opening allowing a cleaning gas to flow therethrough; a gas opening formed in the horizontal portion of the bracket; and an L-shaped bracket. It is contemplated that one or more of the aspects disclosed herein may be combined. Further, it is contemplated that one or more of these aspects may include some or all of the benefits described above.

While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A substrate processing chamber, comprising:

a chamber body comprising one or more sidewalls, each of the one or more sidewalls comprising an inner surface;

a base comprising a support surface;

a processing volume above the pedestal;

a lower space below the base;

a bracket mounted to the inner surface of a sidewall of the one or more sidewalls, the bracket comprising:

the vertical part is provided with a vertical hole,

a horizontal portion including at least one surface parallel to the support surface of the base,

a first end and a second end, wherein,

a longitudinal length between the first end and the second end,

a gas opening formed in the support between the first end and the second end to allow gas to flow from the process space through the gas opening and to the lower space; and

a shadow frame movable into and out of contact with the bracket.

2. The substrate processing chamber of claim 1, wherein the horizontal portion at least partially protrudes inward from the inner surface.

3. The substrate processing chamber of claim 2, wherein:

the vertical portion includes an inward facing surface and an outward facing surface;

the horizontal portion includes an upper surface and a lower surface; and is

The vertical portion intersects the horizontal portion to form an L-shape of the bracket.

4. The substrate processing chamber of claim 3, wherein the gas opening comprises a slot formed in an inward-facing surface of the horizontal portion, and the inward-facing surface of the horizontal portion is rounded.

5. The substrate processing chamber of claim 3, wherein the gas opening is disposed between an inward-facing surface of the horizontal portion and the inward-facing surface of the vertical portion.

6. The substrate processing chamber of claim 3, wherein the support comprises one or more protrusions protruding from the outward-facing surface of the vertical portion and into one or more recesses formed in the inner surface of the sidewall of the one or more sidewalls.

7. The substrate processing chamber of claim 1, wherein the support further comprises a second gas opening formed in the support between the first end and the second end to allow the gas to flow from the process space through the second gas opening and to the lower space, the second gas opening being spaced apart from gas opening along the longitudinal length of the support.

8. The substrate processing chamber of claim 1, wherein:

the one or more sidewalls include four sidewalls that define a rectangular shape of the chamber body;

the substrate processing chamber further comprises a second support, a third support, and a fourth support;

each of the second, third, and fourth brackets includes a gas opening; and is

The support, the second support, the third support, and the fourth support are disposed apart from one another such that a plurality of gaps are disposed at corners of the chamber body.

9. The substrate processing chamber of claim 1, wherein the support is disposed between the one or more sidewalls and the shadow frame of the substrate processing chamber.

10. A method of operating a substrate processing chamber, comprising:

processing a substrate disposed on a support surface of a susceptor disposed in a chamber body;

removing the substrate from the support surface; and

one or more cleaning gases are directed over the support surface of the pedestal and into a gas opening formed in a pedestal mounted to the chamber body, the gas opening being disposed between a first end and a second end of the pedestal.

11. The method of claim 10, further comprising moving the shadow frame into contact with the support prior to directing one or more cleaning gases over the support surface of the pedestal and into the gas opening.

12. The method of claim 11, further comprising flowing the one or more cleaning gases from the gas opening and into a lower volume of the substrate processing chamber.

13. The method of claim 11, wherein at least a portion of the gas opening is between the shadow frame and the chamber body in a horizontal plane.

14. A method of operating a substrate processing chamber, comprising:

processing a substrate disposed in a processing volume, wherein a shadow frame is disposed at a gap from one or more supports mounted to a chamber body;

moving the shadow frame into contact with the one or more supports mounted to the chamber body; and

flowing one or more cleaning gases into the processing volume, the flowing the one or more cleaning gases comprising:

flowing the one or more cleaning gases through one or more gas openings formed in each of the one or more shelves.

15. The method of claim 14, further comprising flowing the one or more cleaning gases from the one or more gas openings and into a lower volume of the substrate processing chamber.