CN114499414B - Bidirectional active mixer based on complementary MOS tube - Google Patents
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
- H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/50—Circuits using different frequencies for the two directions of communication
- H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
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- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention belongs to the technical field of bidirectional transceivers, and particularly provides a bidirectional active mixer based on a complementary MOS (metal oxide semiconductor) tube, which is used for solving the problems that the conventional passive annular mixer can introduce larger loss, needs larger local oscillation signal and the like in a link. The invention connects PMOS tube and NMOS tube in parallel to form a MOS tube pair, and four MOS tube pairs form a double-balanced active mixer structure; in each MOS tube pair, the source electrode of the NMOS is connected with the drain electrode of the PMOS to be connected with a radio frequency signal, the drain electrode of the NMOS is connected with the source electrode of the PMOS to be connected with an intermediate frequency signal, and the grid electrode of the NMOS is applied with an inverted local oscillation signal; the radio frequency signal is changed into an intermediate frequency signal to be output from the source electrode to the drain electrode of the NMOS, and the intermediate frequency signal is changed into the radio frequency signal to be output from the source electrode to the drain electrode of the PMOS, so that the bidirectional mixing is realized, and the frequency conversion mode is switched without additional switch control; meanwhile, the invention has the structure of the common gate amplifier and positive feedback, can provide gain while realizing bidirectional mixing, and improves the link performance.
Description
Technical Field
The invention belongs to the technical field of bidirectional transceivers, relates to a mixer serving as a key module in a radio frequency link, and particularly provides a bidirectional active mixer based on a complementary MOS tube.
Background
With the development of wireless communication technology and the application of phased array technology, the bidirectional transceiver technology is gradually applied to radio frequency chips; in the bidirectional transceiver, a transmitting link and a receiving link are combined, an output matching network of a power amplifier and an input matching network of a low noise amplifier are shared, an active transistor part is combined and laid out, and other modules such as a driving amplifier and the like are designed to share the matching network and support a structure for signal bidirectional transmission, so that the bidirectional transceiver finally becomes a link, and only half of the original area is needed, therefore, the bidirectional transceiver can be applied to a phased array chip with higher integration level.
The mixer is used as a key module in the radio frequency link to realize the conversion of the intermediate frequency signal and the radio frequency signal; in the design of the mixer module, gain is a very important index, and the mixer with high gain can drive the next stage better, so that the design pressure of the amplifier is relieved. In the design of a bi-directional mixer, a mixer is needed to perform up-conversion from an intermediate frequency signal to a radio frequency signal, or to reverse the conversion from the radio frequency signal to the intermediate frequency signal to perform down-conversion.
At present, most of the common active mixers are of a gilbert architecture, one signal is required to be input from the gate of the transconductance stage MOS transistor, and one signal is required to be output from the drain of the switching transistor, but after inversion, the signal cannot be output from the gate of the MOS transistor, so that a bidirectional structure cannot be generally formed. Whereas the usual mixers which can be used in bi-directional receivers are mainly passive ring mixers, the circuit schematic is shown in fig. 1; the drains and sources of M1-M4 are respectively biased at the same potential, one end is connected with a radio frequency signal, the other end is connected with an intermediate frequency signal, and the grid is controlled by a local oscillation signal and biased near a threshold voltage; since the voltages between the source and the drain are the same, no direct current flows, and an external power supply is not needed for supplying power, the mixer is called a passive mixer. In the structure, because of the structural symmetry of the source electrode and the drain electrode of the MOS tube, when the signal voltages at the two ends are the same, the signal voltages can be approximately regarded as equivalent, and the signal can be from the source electrode to the drain electrode or from the drain electrode to the source electrode; therefore, under the action of the local oscillation signal, the signal can not only up-convert the intermediate frequency signal to the radio frequency signal, but also down-convert the radio frequency signal to the intermediate frequency signal in the reverse direction, thereby realizing the bidirectional mixing.
However, the passive ring mixer can realize bidirectional signal conversion, but has a plurality of problems, and the corresponding disadvantages are as follows:
1) The passive annular mixer has larger loss: the passive annular mixer has no active amplifying structure, so that only signal attenuation can be caused, and if only an MOS tube in the mixer is regarded as an ideal lossless switch, the loss is at least 4dB; the core part of the passive annular mixer usually loses more than 6dB due to the discontinuity of the switching state of the MOS tube and the resistance of the MOS tube in the conducting state, and the loss is only more by combining the matching networks of the front stage and the rear stage; therefore, the passive annular mixer can cause the gain of the whole link to be greatly reduced, and the whole communication performance is affected;
2) Passive ring mixers require a large local oscillator signal: because of the high loss characteristic of the passive annular mixer, optimization is required to be carried out towards a low loss direction in the design process, which means that a larger MOS tube is used, and the corresponding parasitic capacitance is increased; therefore, the mixer needs a larger local oscillation signal to drive the switching of the mixer, which results in an increase in the output power requirement of the local oscillation link and increases the overall power consumption of the chip.
Disclosure of Invention
The invention aims to provide a bidirectional active mixer based on a complementary MOS tube, aiming at the problems that the existing passive annular mixer can introduce larger loss and larger local oscillation signal in a link, and the like; the invention provides a new structure, which connects complementary PMOS (P-channel metal oxide semiconductor) and NMOS (N-channel metal oxide semiconductor) tubes in parallel to form an active mixer with a switching stage, can realize bidirectional signal frequency conversion through the complementary characteristic, does not need additional switching control signals to switch the mixing state, and has the advantages that the connection structure of a common grid provides positive gain and reduces the dependence on local oscillation power, so that the bidirectional mixer with the gain is realized, and the performance of a bidirectional transceiver is improved.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a bidirectional active mixer based on complementary MOS transistors, comprising: switching tubes, transformers trans former1 and trans former2, and tail current source M9; wherein,
the switching tube includes: NMOS tubes M1, M4, M5 and M8 are connected with PMOS tubes M2, M3, M6 and M7, wherein the drain electrode of the NMOS tube M1, the source electrode of the PMOS tube M2 and the drain electrode of the NMOS tube M5 are connected with the source electrode of the PMOS tube M6, and the source electrode of the PMOS tube M3, the drain electrode of the NMOS tube M4, the source electrode of the PMOS tube M7 and the drain electrode of the NMOS tube M8 are connected; the gates of the NMOS tube M1, the PMOS tube M3, the PMOS tube M6 and the NMOS tube M8 are connected with a positive local oscillation signal LO+, and the gates of the PMOS tube M2, the NMOS tube M4, the NMOS tube M5 and the PMOS tube M7 are connected with a negative local oscillation signal LO-; the source electrode of the NMOS tube M1, the drain electrode of the PMOS tube M2 and the source electrode of the NMOS tube M3 are connected with the drain electrode of the PMOS tube M4, and the drain electrode of the PMOS tube M6, the source electrode of the NMOS tube M5, the drain electrode of the PMOS tube M7 and the source electrode of the NMOS tube M8 are connected;
the primary coil of the transformer1 is connected with an intermediate frequency signal (IF+, IF-), the secondary coil of the transformer1 is connected between the drains of the NMOS tube M1 and the NMOS tube M8, and the center tap is connected with a voltage V dd The method comprises the steps of carrying out a first treatment on the surface of the The primary coil of the transformer2 is connected with radio frequency signals (RF+, RF-), the secondary coil of the transformer2 is connected between the source electrodes of the MOS tube M2 and the MOS tube M3, and the drain electrode of the tail current source M9; the gate of the tail current source M9 is connected with the bias voltage V bias1 The source electrode is grounded.
Further, the NMOS transistors M1, M4, M5, and M8 have the same structural dimensions, and the PMOS transistors M2, M3, M6, and M7 have the same structural dimensions.
Further, the bidirectional active mixer satisfies the condition:
wherein ,Vdd For the supply voltage, V LO,dc Is composed of MOS transistors M1-M8 grid electrodeDirect current level of local oscillation signal, V thp Is the threshold voltage of the PMOS tube, V thn Is the threshold voltage of NMOS tube, V ds,M9 The source-drain voltage difference of the tail current source M9.
Further, the tail current source M9 adopts an NMOS tube.
The invention has the beneficial effects that:
the invention provides a bidirectional active mixer based on a complementary MOS tube, which improves the traditional double-balanced active mixer, and can realize up-conversion and down-conversion in a reverse way, thereby achieving the effect of bidirectional mixing, and greatly reducing the chip area when being applied to a bidirectional radio frequency transceiver; in addition, the invention has the structure of the common gate amplifier and positive feedback, and compared with a passive annular mixer, the invention can realize bidirectional mixing and simultaneously provide gain, thereby improving the link performance.
More specifically, the bidirectional active mixer of the present invention has the following advantages:
1. the invention adopts a bidirectional active mixer based on complementary MOS tubes, and connects the PMOS tubes and the NMOS tubes in parallel to form a MOS tube pair, and four MOS tube pairs form a double-balanced active mixer structure; in each MOS tube pair, the source electrode of the NMOS is connected with the drain electrode of the PMOS to be connected with a radio frequency signal, the drain electrode of the NMOS is connected with the source electrode of the PMOS to be connected with an intermediate frequency signal, and the grid electrode of the NMOS is applied with an inverted local oscillation signal; the radio frequency signal is changed into an intermediate frequency signal output from the source electrode to the drain electrode of the NMOS through the corresponding transformer, and the intermediate frequency signal is changed into a radio frequency signal output from the source electrode to the drain electrode of the PMOS through the corresponding transformer, so that bidirectional mixing is realized;
2. according to the invention, the tail current source is introduced, so that the NMOS tube and the PMOS tube are biased near the threshold voltage, and therefore, an additional switch is not required to control and switch a frequency conversion mode, and the up-conversion and the down-conversion are in the same circuit working state;
3. the bidirectional active mixer is in a common grid mode when in operation, the grid electrodes of the NMOS tube and the PMOS tube which are connected in parallel apply opposite signals, positive feedback is introduced, the gain defect of the PMOS tube is overcome, the signals can be amplified while the mixing is carried out, and the link performance is improved.
Drawings
Fig. 1 is a schematic circuit diagram of a conventional passive ring mixer.
Fig. 2 is a schematic circuit diagram of a bidirectional active mixer based on complementary MOS transistors in the present invention.
Detailed Description
The invention will be described in further detail with reference to the drawings and examples.
The embodiment provides a bidirectional active mixer based on a complementary MOS tube, which reserves a switch part of a traditional Gilbert type active mixer, connects NMOS and PMOS in parallel, and applies an inverted local oscillation signal to a grid electrode to realize bidirectional frequency conversion with gain; the circuit schematic diagram of the bidirectional active mixer based on the complementary MOS tube is shown in fig. 2, and the bidirectional active mixer mainly comprises a mixer switching tube formed by the MOS tubes of M1-M8, two transformers trans former1 and trans former2 connected with signal input and output and a tail current source M9; more specifically:
the drain electrode of the NMOS tube M1, the source electrode of the PMOS tube M2 and the drain electrode of the NMOS tube M5 are connected with the source electrode of the PMOS tube M6, and the source electrode of the PMOS tube M3, the drain electrode of the NMOS tube M4, the source electrode of the PMOS tube M7 and the drain electrode of the NMOS tube M8 are connected; the gates of the NMOS tube M1, the PMOS tube M3, the PMOS tube M6 and the NMOS tube M8 are connected with a positive local oscillation signal LO+, and the gates of the PMOS tube M2, the NMOS tube M4, the NMOS tube M5 and the PMOS tube M7 are connected with a negative local oscillation signal LO-; the source electrode of the NMOS tube M1, the drain electrode of the PMOS tube M2 and the source electrode of the NMOS tube M3 are connected with the drain electrode of the PMOS tube M4, and the drain electrode of the PMOS tube M6, the source electrode of the NMOS tube M5, the drain electrode of the PMOS tube M7 and the source electrode of the NMOS tube M8 are connected;
the primary coil of the transformer1 is connected with an intermediate frequency signal (IF+, IF-), the secondary coil of the transformer1 is connected between the drains of the NMOS tube M1 and the NMOS tube M8, and the center tap is connected with a voltage V dd The method comprises the steps of carrying out a first treatment on the surface of the The primary coil of the transformer2 is connected with radio frequency signals (RF+, RF-), the secondary coil of the transformer2 is connected between the source electrodes of the MOS tube M2 and the MOS tube M3, and the drain electrode of the tail current source M9; the gate of the tail current source M9 is connected with the bias voltage V bias1 The source electrode is grounded.
In terms of working principle:
the invention mainly comprises a mixer switching tube formed by MOS tubes of M1-8, two transformers trans former1 and trans former2 which are connected with signal input and output and a tail current source M9;
as shown in fig. 2, MOS transistors M1-M8 in the circuit are switching transistors of the mixer, so as to form a double-balanced mixing structure; wherein M1, M4, M5 and M8 are NMOS tubes, M2, M3, M6 and M7 are PMOS tubes, the NMOS tubes are connected in parallel with the PMOS tubes in pairs, the source electrode of each pair of NMOS tubes is connected with the drain electrode of the PMOS tube, the drain electrode of the NMOS tube is connected with the source electrode of the PMOS tube, and the grid electrode of the NMOS tube is applied with an opposite local oscillation signal; the intermediate frequency signal is connected by a transformer trans former1, the radio frequency signal is connected by a transformer trans former2, and the two transformers are led out from the center tap of the secondary coil connected with one side of the MOS tube M1-M8 and respectively connected with a bias V dd And a tail current source; at the center tap, the differential signals on both sides cancel out and can be considered as ac ground, so the bias circuit does not affect the mixer core.
In order to enable the mixer to realize up-down mixing without switching states, the bias voltage of the local oscillation signal of the grid electrode of the MOS tube needs to be connected to the voltage difference between the source electrode of the PMOS tube and the source electrode of the NMOS tube, and the voltage difference is equal to the threshold voltages of the two MOS tubes respectively:
wherein ,Vdd For the supply voltage, V LO,dc The direct current level of local oscillation signals connected with the grid electrodes of the MOS tubes M1-M8 is V thp Is the threshold voltage of the PMOS tube, V thn Is the threshold voltage of NMOS tube, V ds,M9 The voltage difference between the source and the drain of the MOS transistor M9;
because the power supply voltage is larger than the sum of the absolute values of the threshold voltages of the NMOS tube and the PMOS tube in most CMOS processes at present, a tail current source M9 is needed to be added, and the voltage difference is compensated through the voltage drop of the drain electrode and the source electrode of the tail current source M9, so that the NMOS tube and the PMOS tube can be biased near a switch state; since NMOS has higher carrier mobility, occupies a smaller area than PMOS while providing the same large current, so M9 uses NMOS transistors; because both MOS tubes are biased near the switch state, the switch state can be switched by applying a local oscillation large signal, and frequency mixing is realized.
When a radio frequency signal enters from the transducer 2, the sources of the four NMOS tubes are connected, the radio frequency signal is equivalent to a common gate amplifier, the on-off of the switching tube plays a role of mixing frequency, and an intermediate frequency signal is connected to the transducer 1 from the drain of the NMOS tube and is output; because the local oscillation signals are connected in opposite phase, the NMOS tube is started, the PMOS tube is also started, the drain electrode end of the PMOS tube is connected with the radio frequency signals, and the radio frequency signals can see a small signal resistor with a large resistance value and a small amount of parasitic capacitance according to the small signal characteristics of the MOS tube, so that the radio frequency signals can not pass through the high-resistance PMOS tube but pass through the NMOS tube; when both MOS tubes are opened, the source electrode of the PMOS tube can positively feed back the potential change of the intermediate frequency signal obtained by down-conversion to the radio frequency end, so that the gain of the mixer is equivalently improved;
similarly, after the intermediate frequency signal enters from the converter 1, the intermediate frequency signal is connected to the sources of the four PMOS tubes, the intermediate frequency signal is equivalent to a common gate amplifier, the on-off of the switching tube plays a role of mixing, and the radio frequency signal is connected to the converter 2 from the drain of the PMOS tube for output; the intermediate frequency signal can see high resistance at the NMOS tube, so that the feed-through from the NMOS tube is avoided, and the potential change of the source electrode of the NMOS tube can be fed back to the intermediate frequency end of the drain electrode when the NMOS tube is started, so that the gain is improved;
in addition, the carrier mobility of the P-type doped MOS tube is low, in the millimeter wave frequency band, if the grid electrodes of the NMOS tube and the PMOS tube which are connected in parallel apply in-phase local oscillation signals, when the PMOS tube is turned on, the NMOS tube is completely turned off, only the PMOS tube participates in amplification, and the active mixer of the PMOS switch tube has insignificant advantage in gain performance compared with the passive annular mixer of the NMOS tube; therefore, the invention applies the opposite local oscillation signals to the grid electrodes of the PMOS tube and the NMOS tube, and compensates the defect of the PMOS in gain by introducing positive feedback, so that the mixer has better gain performance in the up-conversion process.
While the invention has been described in terms of specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the equivalent or similar purpose, unless expressly stated otherwise; all of the features disclosed, or all of the steps in a method or process, except for mutually exclusive features and/or steps, may be combined in any manner.
Claims (3)
1. A bidirectional active mixer based on complementary MOS transistors, comprising: switching tubes, transformers trans former1 and trans former2, and tail current source M9; wherein,
the switching tube includes: NMOS tubes M1, M4, M5 and M8 are connected with PMOS tubes M2, M3, M6 and M7, wherein the drain electrode of the NMOS tube M1, the source electrode of the PMOS tube M2 and the drain electrode of the NMOS tube M5 are connected with the source electrode of the PMOS tube M6, and the source electrode of the PMOS tube M3, the drain electrode of the NMOS tube M4, the source electrode of the PMOS tube M7 and the drain electrode of the NMOS tube M8 are connected; the gates of the NMOS tube M1, the PMOS tube M3, the PMOS tube M6 and the NMOS tube M8 are connected with a positive local oscillation signal LO+, and the gates of the PMOS tube M2, the NMOS tube M4, the NMOS tube M5 and the PMOS tube M7 are connected with a negative local oscillation signal LO-; the source electrode of the NMOS tube M1, the drain electrode of the PMOS tube M2 and the source electrode of the NMOS tube M3 are connected with the drain electrode of the PMOS tube M4, and the drain electrode of the PMOS tube M6, the source electrode of the NMOS tube M5, the drain electrode of the PMOS tube M7 and the source electrode of the NMOS tube M8 are connected;
the primary coil of the transformer1 is connected with an intermediate frequency signal (IF+, IF-), the secondary coil of the transformer1 is connected between the drains of the NMOS tube M1 and the NMOS tube M8, and the center tap is connected with a voltage V dd The method comprises the steps of carrying out a first treatment on the surface of the The primary coil of the transformer2 is connected with radio frequency signals (RF+, RF-), the secondary coil of the transformer2 is connected between the source electrodes of the NMOS tube M1 and the NMOS tube M8, and the center tap is connected with the drain electrode of the tail current source M9; the gate of the tail current source M9 is connected with the bias voltage V bias1 The source electrode is grounded;
the bi-directional active mixer satisfies the condition:
wherein ,V dd for the supply voltage to be the same,V LO,dc is the direct current level of the local oscillation signal connected with the grid electrode of the MOS tube M1-M8,V thp is the threshold voltage of the PMOS tube,V thn is the threshold voltage of the NMOS transistor,V ds,M9 the source-drain voltage difference of the tail current source M9.
2. The bidirectional active mixer based on complementary MOS transistors as set forth in claim 1, wherein said NMOS transistors M1, M4, M5, M8 are identical in structural dimension, and said PMOS transistors M2, M3, M6, M7 are identical in structural dimension.
3. The bidirectional active mixer based on complementary MOS transistors as recited in claim 1 wherein said tail current source M9 is an NMOS transistor.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9514944D0 (en) * | 1994-07-16 | 1995-09-20 | Blomley Peter F | Signal mixer |
| CN101202533A (en) * | 2007-12-20 | 2008-06-18 | 复旦大学 | Frequency mixer with low-power consumption and high performance in quadrature |
| CN201590803U (en) * | 2010-01-20 | 2010-09-22 | 中兴通讯股份有限公司 | Push-pull type frequency mixer |
| CN103338008A (en) * | 2013-07-24 | 2013-10-02 | 东南大学 | Wide/intermediate frequency MMW (Millimeter Wave) double-balance passive frequency mixer |
| US9520833B1 (en) * | 2009-09-30 | 2016-12-13 | Rockwell Collins, Inc. | Active ring mixer |
| CN107196607A (en) * | 2017-04-28 | 2017-09-22 | 天津大学 | A kind of down-conversion mixer |
| CN110535441A (en) * | 2019-09-06 | 2019-12-03 | 电子科技大学 | A kind of high-isolation broadband millimeter-wave frequency mixer applied to 5G communication |
| CN113676138A (en) * | 2021-08-23 | 2021-11-19 | 电子科技大学 | High-spurious suppression passive multi-local-oscillation frequency mixer |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4881596B2 (en) * | 2004-10-08 | 2012-02-22 | パナソニック株式会社 | Bidirectional frequency converter and radio using the same |
| US10193497B2 (en) * | 2016-12-06 | 2019-01-29 | Qualcomm Incorporated | Enhanced broadband operation of an active mixer |
-
2021
- 2021-12-30 CN CN202111645852.2A patent/CN114499414B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9514944D0 (en) * | 1994-07-16 | 1995-09-20 | Blomley Peter F | Signal mixer |
| CN101202533A (en) * | 2007-12-20 | 2008-06-18 | 复旦大学 | Frequency mixer with low-power consumption and high performance in quadrature |
| US9520833B1 (en) * | 2009-09-30 | 2016-12-13 | Rockwell Collins, Inc. | Active ring mixer |
| CN201590803U (en) * | 2010-01-20 | 2010-09-22 | 中兴通讯股份有限公司 | Push-pull type frequency mixer |
| CN103338008A (en) * | 2013-07-24 | 2013-10-02 | 东南大学 | Wide/intermediate frequency MMW (Millimeter Wave) double-balance passive frequency mixer |
| CN107196607A (en) * | 2017-04-28 | 2017-09-22 | 天津大学 | A kind of down-conversion mixer |
| CN110535441A (en) * | 2019-09-06 | 2019-12-03 | 电子科技大学 | A kind of high-isolation broadband millimeter-wave frequency mixer applied to 5G communication |
| CN113676138A (en) * | 2021-08-23 | 2021-11-19 | 电子科技大学 | High-spurious suppression passive multi-local-oscillation frequency mixer |
Non-Patent Citations (4)
| Title |
|---|
| Po-Yi Wu等.A 71-86-GHz Switchless Asymmetric Bidirectional Transceiver in a 90-nm SiGe BiCMOS.《IEEE Transactions on Microwave Theory and Techniques》.2016,第64卷(第12期),4262-4273. * |
| Zhiqing Liu等.A 62-90 GHz High Linearity and Low Noise CMOS Mixer Using Transformer-Coupling Cascode Topology.《IEEE Access》.2018,第6卷19338-19344. * |
| 余益明.硅基射频毫米波多通道前端关键模块研究与设计.《中国博士学位论文全文数据库信息科技辑》.2018,(第7期),I135-28. * |
| 彭尧.基于130nm CMOS工艺的毫米波混频器研究与设计.《中国优秀硕士学位论文全文数据库工程科技Ⅱ辑》.2020,(第6期),C035-186. * |
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