CN114499168A - Multiphase boost conversion device - Google Patents
Multiphase boost conversion device Download PDFInfo
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- CN114499168A CN114499168A CN202111630867.1A CN202111630867A CN114499168A CN 114499168 A CN114499168 A CN 114499168A CN 202111630867 A CN202111630867 A CN 202111630867A CN 114499168 A CN114499168 A CN 114499168A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/34—Snubber circuits
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Dc-Dc Converters (AREA)
Abstract
A multi-phase boost converter comprises a multi-phase boost converter and a passive lossless buffer; the passive lossless buffer comprises a first resonant capacitor, a second resonant capacitor, an output end first one-way conduction element, an output end second one-way conduction element, an input end first one-way conduction element, an input end second one-way conduction element and a resonant inductor. The invention has the advantages of reducing the switching loss of the multi-phase boost converter and reducing the electromagnetic interference by using the buffer with a simple structure.
Description
Technical Field
The present invention relates to a multi-phase boost converter with buffer, and more particularly to a multi-phase boost converter with passive lossless buffer.
Background
The dual-phase hard-switching boost converter generates an obvious voltage and current overlapping area on a voltage and current waveform diagram during switching, and the voltage and current overlapping area is switching loss of the switch, and the switching loss reduces energy conversion efficiency and raises element temperature.
Later, a two-phase soft-switching boost converter was proposed, which enables the overlapping area of the voltage and the current to be reduced, thereby reducing the energy loss; the prior art two-phase soft-switching boost converter reduces the switching loss by slowing the rising slope or falling slope of the switching voltage or current.
However, some prior art bi-phase soft-switching boost converters have high conduction loss and can only operate with a duty cycle (duty cycle) less than 50%, some prior art bi-phase soft-switching boost converters cannot be phase-staggered by 180 degrees when the duty cycle is less than 50%, and other related art bi-phase soft-switching boost converters have too many switching elements.
Disclosure of Invention
To solve the above problems, the present invention provides a multi-phase boost converter with passive lossless snubber.
In order to achieve the purpose, the invention provides the following technical scheme: a multi-phase boost conversion device comprising: a multi-phase boost converter; and a passive lossless snubber electrically connected to the multi-phase boost converter, wherein the passive lossless snubber comprises: a first resonant capacitor electrically connected to the multi-phase boost converter; a second resonant capacitor electrically connected to the multi-phase boost converter; a first one-way conduction element at the output end, electrically connected to the multi-phase boost converter and the first resonant capacitor; a second one-way conduction element at the output end, electrically connected to the multi-phase boost converter and the second resonance capacitor; the first unidirectional conducting element at the input end is electrically connected to the first resonant capacitor and the first unidirectional conducting element at the output end; the input end second unidirectional conducting element is electrically connected to the second resonance capacitor and the output end second unidirectional conducting element; and a resonant inductor electrically connected to the multi-phase boost converter, the first one-way conduction element at the input end and the second one-way conduction element at the input end.
Compared with the prior art, the invention has the advantages that the buffer with a simple structure is used for reducing the switching loss of the multi-phase boost converter and reducing the electromagnetic interference. The invention can absorb the spike (spike) after the switch of the multi-phase boost converter is turned off and reduce the rising slope of the switch voltage so as to reduce the electromagnetic interference emission intensity caused by the high voltage slope, thereby reducing the switching loss (namely, the overlapping area of the switch voltage and the switch current on the voltage and current oscillogram) when the switch is turned off.
Drawings
Fig. 1-1 to fig. 1-8 are schematic diagrams of the multiphase boost converter of the present invention in a first operation stage of the half-type to an eighth operation stage of the half-type respectively.
Fig. 2-1 to fig. 2-8 are schematic diagrams of the multiphase boost converter of the present invention in the full-mode first operation stage to the full-mode eighth operation stage, respectively.
FIG. 3 is a block diagram of the multi-phase boost converter of the present invention.
FIG. 4 is a waveform diagram of the multiphase step-up converter of the present invention from the first operation stage to the eighth operation stage of the half-type.
FIG. 5 is a waveform diagram of the multiphase step-up converter from the first operation stage to the eighth operation stage.
In the figure: 10, a multi-phase boost converter device, 102, a multi-phase boost converter, 104, a passive lossless buffer, 106, a switch controller, 108, an output terminal, 110, an input terminal, 112, a pulse width modulation signal, C1, a first resonant capacitor, C2, a second resonant capacitor, Cin, an input terminal capacitor, Co, an output terminal capacitor, Coss1, a first parasitic capacitor, Coss2, a second parasitic capacitor, D1, a first diode, D2, a second diode, D3, an input terminal first unidirectional conducting element, D4, an input terminal second unidirectional conducting element, D5, an output terminal first unidirectional conducting element, D6, an output terminal second unidirectional conducting element, iC1, a first resonant capacitor current, iC2, a second resonant capacitor current, iD1, a first diode current, iD2, a second diode current, iD3, an input terminal first unidirectional conducting current, iD4, a second resonant capacitor current, a second unidirectional conducting current, an iD1, a first diode current, a second unidirectional conducting current, a second diode current, a second, An iD5, an iD6, an iL1, a first drain current, an ids2, a second drain current, an iL1, a first inductor current, an iL1_ pk, a first inductor current, an iL1_ vly, a first inductor valley current, an iL2, a second inductor current, an iL2_ pk, a second inductor peak current, an iL2_ vly, a second inductor valley current, a resonant inductor current, an L1, a first inductor, an L2, a second inductor, an LS resonant inductor, an OFF transistor switch, an ON transistor switch, a Q1, a first transistor switch, a Q2, a second transistor switch, a t0, a zero time point, a t1, a first time point, a t2, a second time point, a t3, a third time point, a fourth time point, a sixth time point, a fourth time point, a sixth time point, a fourth point, a fifth point, a fourth point, a fifth point, a sixth point, a fifth point, a sixth point, a fifth point, a sixth point, a fifth point, a sixth point, a fifth point, a fourth point, a sixth point, a fifth point, a sixth point, a fourth point, a fifth point, a sixth point, a third point, a fourth point, a sixth point, a fourth point, a fifth point, a third point, a fourth point, a second resonant capacitor voltage, a vds1, a first drain voltage, a vds2, a second drain voltage, a vgs1, a first gate source voltage, a vgs2, a second gate source voltage, Vin, an input end voltage, a vL1, a first inductor voltage, a vL2, a second inductor voltage, a vLs, a resonant inductor voltage, Vo, an output end voltage, an XC1, a first resonant capacitor capacitive reactance, an XC2, a second resonant capacitor capacitive reactance, and a XLs, a resonant inductor inductive reactance
Detailed Description
In the present disclosure, numerous specific details are provided to provide a thorough understanding of embodiments of the invention; one skilled in the relevant art will recognize, however, that the invention can be practiced without one or more of the specific details; in other instances, well-known details are not shown or described to avoid obscuring aspects of the invention. The technical content and the detailed description of the present invention are described below with reference to the drawings:
referring to fig. 3, the multi-phase boost converter 10 includes a multi-phase boost converter 102 and a passive lossless snubber (snubber, also called a shock absorber) 104; the passive lossless snubber 104 comprises a first resonant capacitor C1, a second resonant capacitor C2, an input end first unidirectional conductive element D3, an input end second unidirectional conductive element D4, an output end first unidirectional conductive element D5, an output end second unidirectional conductive element D6 and a resonant inductor LS; the multi-phase boost converter 102 comprises a first inductor L1, a second inductor L2, a first transistor switch Q1, a second transistor switch Q2, a first diode D1, a second diode D2, a switch controller 106, an output terminal 108, an input terminal 110, an input terminal capacitor Cin, and an output terminal capacitor Co; the first transistor switch Q1 has a first parasitic capacitance Coss1, and the second transistor switch Q2 has a second parasitic capacitance Coss 2; the elements are electrically connected to each other.
For ease of explanation, the present invention assumes that these devices are all ideal, and that the forward bias voltages of the diodes are all zero volts. The input end first unidirectional conducting device D3, the input end second unidirectional conducting device D4, the output end first unidirectional conducting device D5 and the output end second unidirectional conducting device D6 can be, for example, but the invention is not limited to, diodes; the first transistor switch Q1 and the second transistor switch Q2 can be, for example but not limited to, metal oxide semiconductor field effect transistors; the switch controller 106 may be, for example, but not limited to, a pwm signal controller.
The operation types of the multi-phase boost converter 10 of the present invention can be divided into half-mode operation and full-mode operation according to different load power requirements, and the half-mode operation includes eight operation phases (i.e. half-mode first operation phase to half-mode eighth operation phase), and the full-mode operation also includes eight operation phases (i.e. full-mode first operation phase to full-mode eighth operation phase).
First, the operation of the half-mode of the present invention is described in detail as follows:
referring to fig. 3, when the switch controller 106 is configured to transmit a pwm signal 112 to the first transistor switch Q1 to drive the first transistor switch Q1 and a duty cycle (duty cycle) of the pwm signal 112 is less than 50%, or when the switch controller 106 is configured to transmit the pwm signal 112 to the second transistor switch Q2 to drive the second transistor switch Q2 and the duty cycle of the pwm signal 112 is less than 50%, the multi-phase boost converter 10 is configured to sequentially operate at a half-type first operation stage, a half-type second operation stage, a half-type third operation stage, a half-type fourth operation stage, a half-type fifth operation stage, a half-type sixth operation stage, a half-type seventh operation stage and a half-type eighth operation stage.
Fig. 1-8 are schematic diagrams of the multiphase boost converter of the present invention in the first operation stage of half-mode to the eighth operation stage of half-mode, respectively, wherein the dashed arrows indicate the current direction, and some elements and symbols already appearing in fig. 3 are omitted in fig. 1-8 for the sake of brevity, and the symbol ON next to the transistor switches indicates that the transistor switches are turned ON, and the symbol OFF indicates that the transistor switches are turned OFF.
Referring to fig. 1-1 and fig. 3, when the multiphase boost converter 10 is configured to operate in the half-mode first operation phase, the switch controller 106 is configured to turn on the first transistor switch Q1 and keep turning off the second transistor switch Q2, the first inductor L1 is configured to be excited by an input terminal voltage Vin of the input terminal 110 to store first electrical energy in the form of a first magnetic field, the first inductor current iL1 flowing through the first inductor L1 is gradually increased, the resonant inductor LS and the first resonant capacitor C1 are configured to be charged and resonate by the input terminal voltage Vin, and the input terminal first unidirectional conductive element D3 is configured to make the resonant inductor LS and the first resonant capacitor C1 configured to resonate for a half-cycle to make a first resonant capacitor voltage vC1 of the first resonant capacitor C1 be twice the input terminal voltage Vin, and a resonant inductor current iLs flowing through the resonant inductor LS is made zero, and then the multi-phase boost converter 10 is configured to operate in the second half-mode operation phase.
Referring to fig. 1-2 and fig. 3, when the multi-phase boost converter 10 is configured to operate in the half-type second operation phase, the switch controller 106 is configured to keep turning on the first transistor switch Q1 and keep turning off the second transistor switch Q2, and the first inductor L1 is configured to continue to be excited by the input voltage Vin, and the first inductor current iL1 continues to increase, and then the multi-phase boost converter 10 is configured to operate in the half-type third operation phase.
Referring to fig. 1-3 and fig. 3 together, when the multi-phase boost converter 10 is configured to operate in the half-type third operation phase, the switch controller 106 is configured to turn off the first transistor switch Q1 and keep turning off the second transistor switch Q2, and the first parasitic capacitance Coss1 is configured to be charged by the first inductor current iL1 from zero volts, so that the first drain voltage vds1 of the first transistor switch Q1 gradually increases, and the first resonant capacitor C1 is configured to discharge, so that the output terminal first unidirectional conducting element D5 is configured to be forward biased conducting, and the first resonant capacitor voltage vC1 discharges from twice the input terminal voltage Vin to zero volts, and the first drain voltage vds1 plus the first resonant capacitor voltage vC1 is equal to an output terminal voltage Vo of the output terminal 108, and when the first resonant capacitor voltage vC1 discharges to zero volts, the first diode D1 is configured to be forward biased to conduct, and then the multiphase boost converter 10 is configured to operate in the half-type fourth operation phase.
Referring to fig. 1-4 and fig. 3, when the multi-phase boost converter 10 is configured to operate in the half-type fourth operation phase, the switch controller 106 is configured to keep turning off the first transistor switch Q1 and keeping off the second transistor switch Q2, and the first diode D1 is configured to continue forward biased conduction by the first inductor current iL1, and the resonant inductor current iLs is zero, and the first unidirectional conduction current iD3 flowing through an input end of the first unidirectional conduction element D3 is zero, and the second unidirectional conduction current iD4 flowing through an input end of the second unidirectional conduction element D4 is zero, and the first resonant capacitor current iC1 flowing through the first resonant capacitor C1 is zero, and the second resonant capacitor current iC2 flowing through the second resonant capacitor C2 is zero, and the first unidirectional conduction current iD5 flowing through an output end of the first unidirectional conduction element D5 is zero, and the output end second unidirectional conducting current iD6 flowing through the output end second unidirectional conducting element D6 is zero (i.e. no current flows through all elements of the passive lossless snubber 104), and the first electrical energy stored in the first magnetic field form by the first inductor L1 is transferred to the output end 108 in the form of current, and the first inductor current iL1 is gradually decreased, and then the multi-phase boost converter 10 is configured to operate in the half-type fifth operation phase.
Referring to fig. 1-5 and fig. 3, when the multiphase boost converter 10 is configured to operate in the half-type fifth operation phase, the switch controller 106 is configured to turn on the second transistor switch Q2 and keep turning off the first transistor switch Q1, the second inductor L2 is configured to be excited by the input voltage Vin to store second electrical energy in the form of a second magnetic field, the second inductor current iL2 flowing through the second inductor L2 gradually increases, the resonant inductor LS and the second resonant capacitor C2 are configured to be charged and resonate by the input voltage Vin, and the input second unidirectional conducting element D4 is configured to make the resonant inductor LS and the second resonant capacitor C2 configured to resonate for a half-period, so that the second resonant capacitor voltage vC2 of the second resonant capacitor C2 is twice the input voltage Vin, and makes the resonant inductor current iLs zero, and then the multiphase boost converter 10 is configured to operate in the half-type sixth operation phase.
Referring to fig. 1-6 and fig. 3, when the multi-phase boost converter 10 is configured to operate in the half-type sixth operation phase, the switch controller 106 is configured to keep turning on the second transistor switch Q2 and keep turning off the first transistor switch Q1, and the second inductor L2 is configured to continue to be excited by the input voltage Vin, and the second inductor current iL2 continues to increase, and then the multi-phase boost converter 10 is configured to operate in the half-type seventh operation phase.
Referring to fig. 1-7 and fig. 3, when the multi-phase boost converter 10 is configured to operate in the half-mode seventh operation phase, the switch controller 106 is configured to turn off the second transistor switch Q2 and keep turning off the first transistor switch Q1, and the second parasitic capacitor Coss2 is configured to be charged by the second inductor current iL2 from zero volts, so that a second drain voltage vds2 of the second transistor switch Q2 is gradually increased, and the second resonant capacitor C2 is configured to be discharged, so that the output second unidirectional conducting element D6 is configured to be forward biased on, and the second resonant capacitor voltage vC2 is discharged from twice the input voltage Vin to zero volts, and the second drain voltage vds2 plus the second resonant capacitor voltage vC2 is equal to the output voltage Vo, and when the second resonant capacitor voltage vC2 is discharged to zero volts, the second diode D2 is configured to conduct in forward bias, and then the multiphase boost converter 10 is configured to operate in the half-type eighth operation phase.
Referring to fig. 1-8 and fig. 3, when the multiphase boost converter 10 is configured to operate in the half-type eighth operation phase, the switch controller 106 is configured to keep turning off the second transistor switch Q2 and keep turning off the first transistor switch Q1, and the second diode D2 is configured to continue forward biased conduction by the second inductor current iL2, and the resonant inductor current iLs is zero, and the input first unidirectional conduction current iD3 is zero, and the input second unidirectional conduction current iD4 is zero, and the first resonant capacitor current iC1 is zero, and the second resonant capacitor current iC2 is zero, and the output first unidirectional conduction current iD5 is zero, and the output second unidirectional conduction current iD6 is zero (no current flows through the elements of the passive lossless snubber 104), and the second inductor L2 is in the form of the energy stored at the second output end in the form of the energy magnetic field 108, and the second inductor current iL2 gradually decreases.
Please refer to fig. 4, which is a waveform diagram of the multiphase boost converter in the first operation stage to the eighth operation stage of the half-type; please refer to fig. 1-1 to fig. 1-8 and fig. 3. In addition to the above-mentioned symbols, the first transistor switch Q1 has a first gate-source voltage vgs1, the current flowing through the first transistor switch Q1 is referred to as a first drain-source current ids1, the second transistor switch Q2 has a second gate-source voltage vgs2, the current flowing through the second transistor switch Q2 is referred to as a second drain-source current ids2, the current flowing through the first diode D1 is referred to as a first diode current iD1, the current flowing through the second diode D2 is referred to as a second diode current iD2, the first inductor L639 has a first inductor voltage vL1, the second inductor L2 has a second inductor voltage vL2, the resonant inductor LS has a resonant inductor voltage vLs, the peak current of the first inductor iL1 is a first inductor peak current iL1_ pk, the peak current of the second inductor L38il 36il 3652 is a first inductor current lv 36il 2, the peak current of the first inductor iL 36il 3646 is a second inductor current lpk 36il 3646, the valley current of the second inductor current iL2 is a second inductor valley current iL2_ vly, the resonant inductor LS has a resonant inductor inductive reactance XLs, the first resonant capacitor C1 has a first resonant capacitor capacitive reactance XC1, the second resonant capacitor C2 has a second resonant capacitor capacitive reactance XC2, the half-type first operation phase is between a zero time point t0 and a first time point t1, the half-type second operation phase is between the first time point t1 and a second time point t2, the half-type third operation phase is between the second time point t2 and a third time point t3, the half-type fourth operation phase is between the third time point t3 and a fourth time point t4, the half-type fifth operation phase is between the fourth time point t4 and a fifth time point t5, the half-type sixth operation phase is between the sixth time point t5 and a sixth time point t6, the half-type seventh operating phase is between the sixth time point t6 and the seventh time point t7, and the half-type eighth operating phase is between the seventh time point t7 and the zeroth time point t 0.
The overall operation of the present invention is detailed as follows:
referring back to fig. 3, when the switch controller 106 is configured to transmit the pwm signal 112 to the first transistor switch Q1 to drive the first transistor switch Q1 and the duty cycle of the pwm signal 112 is greater than or equal to 50%, or when the switch controller 106 is configured to transmit the pwm signal 112 to the second transistor switch Q2 to drive the second transistor switch Q2 and the duty cycle of the pwm signal 112 is greater than or equal to 50%, the multi-phase boost converter 10 is configured to sequentially operate in a full-type first action phase, a full-type second action phase, a full-type third action phase, a full-type fourth action phase, a full-type fifth action phase, a full-type sixth action phase, a full-type seventh action phase and a full-type eighth action phase.
Fig. 2-1 to 2-8 are schematic diagrams of the multiphase boost converter of the present invention in the first operation stage of full-mode to the eighth operation stage of full-mode respectively, wherein the dashed arrows indicate the current directions, and some elements and symbols already appearing in fig. 3 are omitted in fig. 2-1 to 2-8 for the sake of brevity, and the symbol ON next to the transistor switches indicates that the transistor switches are turned ON, and the symbol OFF indicates that the transistor switches are turned OFF.
Referring to fig. 2-1 and 3, when the multi-phase boost converter 10 is configured to operate in the full-mode first operation phase, the switch controller 106 is configured to turn on the first transistor switch Q1 and keep turning on the second transistor switch Q2, the first inductor L1 is configured to be excited by an input voltage Vin of the input terminal 110 to store first electrical energy in the form of a first magnetic field, the second inductor L2 is configured to be excited by the input voltage Vin to store second electrical energy in the form of a second magnetic field, a first inductor current iL1 flowing through the first inductor L1 is gradually increased, a second inductor current iL2 flowing through the second inductor L2 is gradually increased, the resonant inductor LS and the first resonant capacitor C1 are configured to be charged and resonated by the input voltage Vin, and the first inductor L1 is configured to be continuously excited by the input voltage Vin to continuously excite the first inductor L1 to continuously resonate the first inductor L3883 And the second inductor L2 is configured to be continuously excited by the input terminal voltage Vin to continuously increase the second inductor current iL2, and then the multi-phase boost converter 10 is configured to operate in the full-type second operation phase.
Referring to fig. 2-2 and fig. 3, when the multi-phase boost converter 10 is configured to operate in the full-mode second operation phase, the switch controller 106 is configured to keep turning on the first transistor switch Q1 and turning off the second transistor switch Q2, and the first inductor L1 is configured to continue to be excited by the input voltage Vin, and the first inductor current iL1 continues to increase, and the resonant inductor LS and the first resonant capacitor C1 are configured to be charged and resonate by the input voltage Vin, and the second parasitic capacitor Coss2 is configured to be charged by the second inductor current iL2 from zero volts, so that the second drain voltage vds2 of the second transistor switch Q2 gradually increases, and the second resonant capacitor C2 is configured to discharge, and the second drain voltage vds2 plus the second resonant capacitor voltage vC2 of the second resonant capacitor C2 is equal to the voltage of the output terminal 108, and then the multi-phase boost converter 10 is configured to operate in the third action phase of the full type.
Referring to fig. 2-3 and fig. 3 together, when the multi-phase boost converter 10 is configured to operate in the full-type third operation phase, the switch controller 106 is configured to keep turning off the second transistor switch Q2 and keep turning on the first transistor switch Q1, and the first inductor L1 is configured to continue to be excited by the input terminal voltage Vin, and the first inductor current iL1 continues to increase, and the resonant inductor LS and the first resonant capacitor C1 are configured to be charged and resonate by the input terminal voltage Vin, and the input terminal first unidirectional conducting element D3 is configured to make the resonant inductor LS and the first resonant capacitor C1 configured to resonate for half cycle and stop resonating, make the first resonant capacitor voltage vC1 of the first resonant capacitor C1 be twice the input terminal voltage Vin, and make the resonant current iLs flowing through the resonant inductor LS be zero, and the second inductor current iL2 discharges the second resonant capacitor C2, and when the second resonant capacitor voltage vC2 discharges from twice the input terminal voltage Vin to zero volts, the second diode D2 is configured to be forward biased on, and the second drain voltage vds2 plus the second resonant capacitor voltage vC2 equals the output terminal voltage Vo, and then the multi-phase boost converter 10 is configured to operate in the full fourth operation phase.
Referring to fig. 2-4 and fig. 3, when the multi-phase boost converter 10 is configured to operate in the full-type fourth operation phase, the switch controller 106 is configured to keep turning off the second transistor switch Q2 and keep turning on the first transistor switch Q1, and the second diode D2 is configured to continue forward biased conduction by the second inductor current iL2, and the resonant inductor current iLs is zero, and the input first unidirectional conduction current iD3 flowing through the input first unidirectional conduction element D3 is zero, and the input second unidirectional conduction current iD4 flowing through the input second unidirectional conduction element D4 is zero, and a first resonant capacitor current iC1 flowing through the first resonant capacitor C1 is zero, and the second resonant capacitor current iC2 flowing through the second resonant capacitor C2 is zero, and the output first unidirectional conduction current iD5 flowing through the output first unidirectional conduction element D5 is zero, and the output end second unidirectional conduction current iD6 flowing through the output end second unidirectional conduction element D6 is zero (i.e. no current flows through all elements of the passive lossless snubber 104), and the second electrical energy stored in the second magnetic field form by the second inductor L2 is transmitted to the output end 108 in the form of current, and the second inductor current iL2 gradually decreases, and the first inductor L1 is configured to be excited by the input end voltage Vin and the first inductor current iL1 increases, and then the multi-phase boost converter 10 is configured to operate in the full-type fifth operation phase.
Referring to fig. 2-5 and fig. 3, when the multi-phase boost converter 10 is configured to operate in the full-type fifth operation phase, the switch controller 106 is configured to turn on the second transistor switch Q2 and to remain on the first transistor switch Q1, and the first inductor L1 is configured to be excited by the input voltage Vin to store the first electrical energy in the form of the first magnetic field, and the second inductor L2 is configured to be excited by the input terminal voltage Vin to store the second electrical energy in the form of the second magnetic field, and the first inductor current iL1 gradually increases, and the second inductor current iL2 gradually increases, and the resonant inductor LS and the second resonant capacitor C2 are configured to be charged and resonate by the input terminal voltage Vin, and then the multi-phase boost converter 10 is configured to operate in the full-scale sixth phase of operation.
Referring to fig. 2-6 and 3 together, when the multi-phase boost converter 10 is configured to operate in the full-type sixth operation phase, the switch controller 106 is configured to keep the second transistor switch Q2 turned on and the first transistor switch Q1 turned off, and the second inductor L2 is configured to continue to be excited by the input voltage Vin, and the second inductor current iL2 continues to increase, the first parasitic capacitance Coss1 is configured to be charged by the first inductor current iL1 from zero volts, such that the first drain voltage vds1 of the first transistor switch Q1 gradually increases, and the first resonant capacitor C1 is configured to discharge, and the first drain voltage vds1 plus the first resonant capacitor voltage vC1 is equal to the output voltage Vo, and then the multi-phase boost converter 10 is configured to operate in the full-scale seventh operation phase.
Referring to fig. 2-7 and fig. 3, when the multi-phase boost converter 10 is configured to operate in the full-type seventh operation phase, the switch controller 106 is configured to keep turning on the second transistor switch Q2 and keep turning off the first transistor switch Q1, the second inductor L2 is configured to continue to be excited by the input terminal voltage Vin, and the second inductor current iL2 continues to increase, and the resonant inductor LS and the second resonant capacitor C2 are configured to be charged and resonate by the input terminal voltage Vin, and the input terminal second unidirectional conducting element D4 is configured to make the resonant inductor LS and the second resonant capacitor C2 configured to stop resonating by half-cycle, so that the second resonant capacitor voltage vC2 is twice the input terminal voltage Vin, and the resonant inductor current iLs is zero, and the first inductor current iL1 discharges the first resonant capacitor C1, and when the first resonant capacitor voltage vC1 discharges from twice the input terminal voltage Vin to zero volts, the first diode D1 is configured to be forward biased conductive, and then the multi-phase boost converter 10 is configured to operate in the full-type eighth operation phase.
Referring to fig. 2-8 and fig. 3, when the multi-phase boost converter 10 is configured to operate in the full-type eighth operation phase, the switch controller 106 is configured to keep turning on the second transistor switch Q2 and keep turning off the first transistor switch Q1, and the first diode D1 is configured to continue forward biased conduction by the first inductor current iL1, and the first inductor current iL1 is transmitted to the output terminal 108 to be demagnetized, and the first inductor current iL1 is gradually decreased, and the second inductor L2 is configured to be continuously excited by the input terminal voltage Vin to make the second inductor current iL2 continuously increase, and the resonant inductor current iLs is zero, and the input terminal first unidirectional conduction current iD3 is zero, and the input terminal second unidirectional conduction current iD4 is zero, and the first resonant capacitor current iC1 is zero, and the second capacitor current iC2 is zero, and the output first unidirectional on current iD5 is zero and the output second unidirectional on current iD6 is zero (i.e. no current flows through all the components of the passive lossless snubber 104).
Referring to fig. 5, the full-type first action phase is between a zero time point t0 and a first time point t1, the full-type second action phase is between the first time point t1 and a second time point t2, the full-type third action phase is between the second time point t2 and a third time point t3, the full-type fourth action phase is between the third time point t3 and a fourth time point t4, the full-type fifth action phase is between the fourth time point t4 and a fifth time point t5, the full-type sixth action phase is between the fifth time point t5 and a sixth time point t6, the full-type seventh action phase is between the sixth time point t6 and a seventh time point t7, and the full-type eighth action phase is between the seventh time point t7 and the seventh time point t 0.
The invention has the advantages of reducing the switching loss of the multi-phase boost converter and reducing the electromagnetic interference by using the buffer with a simple structure. The invention can absorb the spike (spike) after the switch of the multi-phase boost converter is turned off and reduce the rising slope of the switch voltage so as to reduce the electromagnetic interference emission intensity caused by the high voltage slope, thereby reducing the switching loss (namely, the overlapping area of the switch voltage and the switch current on the voltage and current oscillogram) when the switch is turned off.
The passive lossless snubber 104 of the present invention only includes four diodes, one inductor and two capacitors to achieve the above-mentioned effects of the present invention, and the first resonant capacitor C1, the second resonant capacitor C2, the input end first unidirectional conducting element D3, the input end second unidirectional conducting element D4, the output end first unidirectional conducting element D5, the output end second unidirectional conducting element D6 and the resonant inductor LS included in the passive lossless snubber 104 do not participate in the processing of the main power, and are not in the power transmission path, so that the passive lossless snubber 104 only needs a very low device rated power, and therefore the present invention can reduce the device size and the additional cost. According to the experimental data, under the same peripheral component parameters and full load efficiency, compared with the conventional RCD buffer, the invention can greatly reduce the switching loss and reduce the electromagnetic interference.
However, the above-mentioned embodiments are only preferred embodiments of the present invention, and the scope of the present invention should not be limited by the above-mentioned embodiments, and all equivalent variations and modifications made according to the claims of the present invention should be covered by the protection scope of the present invention. The present invention is capable of other embodiments, and various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention. In summary, it is understood that the present invention has industrial applicability, novelty and advancement, and the structure of the present invention is not disclosed in the similar products and applications, which completely conform to the requirements of the patent application and are filed by the patent application.
Claims (10)
1. A multiphase boost converter, comprising:
it comprises the following steps:
a multi-phase boost converter; and
a passive lossless snubber electrically connected to the multi-phase boost converter,
wherein the passive lossless buffer comprises:
a first resonant capacitor electrically connected to the multi-phase boost converter;
a second resonant capacitor electrically connected to the multi-phase boost converter;
a first one-way conduction element at the output end, electrically connected to the multi-phase boost converter and the first resonant capacitor;
a second one-way conduction element at the output end, electrically connected to the multi-phase boost converter and the second resonance capacitor;
the first unidirectional conducting element at the input end is electrically connected to the first resonant capacitor and the first unidirectional conducting element at the output end;
the input end second unidirectional conducting element is electrically connected to the second resonance capacitor and the output end second unidirectional conducting element; and
and the resonant inductor is electrically connected to the multi-phase boost converter, the input end first unidirectional conducting element and the input end second unidirectional conducting element.
2. The multiphase boost converter according to claim 1, wherein: the multi-phase boost converter includes:
a first transistor switch electrically connected to the first resonant capacitor;
a second transistor switch electrically connected to the second resonant capacitor; and
a switch controller electrically connected to the first transistor switch and the second transistor switch,
wherein when the switch controller is configured to transmit a PWM signal to the first transistor switch to drive the first transistor switch with a duty cycle of the PWM signal being less than 50%, or when the switch controller is configured to transmit the PWM signal to the second transistor switch to drive the second transistor switch with the duty cycle of the PWM signal being less than 50%, the multiphase boost converter is configured to sequentially operate in a half-type first operation stage, a half-type second operation stage, a half-type third operation stage, a half-type fourth operation stage, a half-type fifth operation stage, a half-type sixth operation stage, a half-type seventh operation stage, and a half-type eighth operation stage;
wherein when the switch controller is configured to transmit the PWM signal to the first transistor switch to drive the first transistor switch and the duty cycle of the PWM signal is greater than or equal to 50%, or when the switch controller is configured to transmit the PWM signal to the second transistor switch to drive the second transistor switch and the duty cycle of the PWM signal is greater than or equal to 50%, the multi-phase boost converter is configured to sequentially operate in a full-type first action phase, a full-type second action phase, a full-type third action phase, a full-type fourth action phase, a full-type fifth action phase, a full-type sixth action phase, a full-type seventh action phase and a full-type eighth action phase.
3. A multiphase boost converter according to claim 2, wherein: wherein when the multi-phase boost converter device is configured to operate in the half-mode first action phase, the switch controller is configured to turn on the first transistor switch and keep off the second transistor switch, and then the multi-phase boost converter device is configured to operate in the half-mode second action phase;
wherein when the multi-phase boost converter device is configured to operate in the half-type second action phase, the switch controller is configured to keep turning on the first transistor switch and keep turning off the second transistor switch, and then the multi-phase boost converter device is configured to operate in the half-type third action phase.
4. A multiphase boost converter according to claim 3, wherein: wherein when the multi-phase boost converter device is configured to operate in the half-type third action phase, the switch controller is configured to turn off the first transistor switch and keep turning off the second transistor switch, and then the multi-phase boost converter device is configured to operate in the half-type fourth action phase;
wherein when the multi-phase boost converter device is configured to operate in the half-type fourth action phase, the switch controller is configured to keep turning off the first transistor switch and keep turning off the second transistor switch, and then the multi-phase boost converter device is configured to operate in the half-type fifth action phase.
5. The multiphase boost converter according to claim 4, wherein: wherein when the multi-phase boost converter device is configured to operate in the half-type fifth action phase, the switch controller is configured to turn on the second transistor switch and keep turning off the first transistor switch, and then the multi-phase boost converter device is configured to operate in the half-type sixth action phase;
wherein when the multi-phase boost converter device is configured to operate in the half-type sixth action phase, the switch controller is configured to keep turning on the second transistor switch and keep turning off the first transistor switch, and then the multi-phase boost converter device is configured to operate in the half-type seventh action phase.
6. The multiphase boost converter according to claim 5, wherein: wherein when the multi-phase boost converter device is configured to operate in the half-type seventh action phase, the switch controller is configured to turn off the second transistor switch and keep turning off the first transistor switch, and then the multi-phase boost converter device is configured to operate in the half-type eighth action phase;
wherein when the multi-phase boost converter device is configured to operate in the half-type eighth action phase, the switch controller is configured to keep turning off the second transistor switch and keep turning off the first transistor switch.
7. A multiphase boost converter according to claim 2, wherein: wherein when the multi-phase boost converter device is configured to operate in the full-mode first phase of operation, the switch controller is configured to turn on the first transistor switch and keep turning on the second transistor switch, and then the multi-phase boost converter device is configured to operate in the full-mode second phase of operation;
wherein when the multi-phase boost converter device is configured to operate in the full-mode second action phase, the switch controller is configured to keep turning on the first transistor switch and turning off the second transistor switch, and then the multi-phase boost converter device is configured to operate in the full-mode third action phase.
8. The multiphase boost converter according to claim 7, wherein: wherein when the multi-phase boost converter device is configured to operate in the full-type third action phase, the switch controller is configured to keep the second transistor switch off and keep the first transistor switch on, and then the multi-phase boost converter device is configured to operate in the full-type fourth action phase;
wherein when the multi-phase boost converter device is configured to operate in the full-type fourth phase of action, the switch controller is configured to keep turning off the second transistor switch and keep turning on the first transistor switch, and then the multi-phase boost converter device is configured to operate in the full-type fifth phase of action.
9. The multiphase boost converter according to claim 8, wherein: wherein when the multi-phase boost converter device is configured to operate in the full-mode fifth action phase, the switch controller is configured to turn on the second transistor switch and keep turning on the first transistor switch, and then the multi-phase boost converter device is configured to operate in the full-mode sixth action phase;
wherein when the multi-phase boost converter device is configured to operate in the full-type sixth action phase, the switch controller is configured to keep turning on the second transistor switch and turning off the first transistor switch, and then the multi-phase boost converter device is configured to operate in the full-type seventh action phase.
10. A multi-phase boost converter according to claim 9, wherein: wherein when the multi-phase boost converter device is configured to operate in the full-type seventh action phase, the switch controller is configured to keep turning on the second transistor switch and keep turning off the first transistor switch, and then the multi-phase boost converter device is configured to operate in the full-type eighth action phase;
wherein when the multi-phase boost converter is configured to operate in the full-type eighth action phase, the switch controller is configured to keep turning on the second transistor switch and keep turning off the first transistor switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111630867.1A CN114499168A (en) | 2021-12-28 | 2021-12-28 | Multiphase boost conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111630867.1A CN114499168A (en) | 2021-12-28 | 2021-12-28 | Multiphase boost conversion device |
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| Publication Number | Publication Date |
|---|---|
| CN114499168A true CN114499168A (en) | 2022-05-13 |
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| CN202111630867.1A Pending CN114499168A (en) | 2021-12-28 | 2021-12-28 | Multiphase boost conversion device |
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| CN (1) | CN114499168A (en) |
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