CN114497359A - Spin orbit torque magnetic random access memory and preparation method thereof - Google Patents

Spin orbit torque magnetic random access memory and preparation method thereof Download PDF

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Publication number
CN114497359A
CN114497359A CN202210072138.7A CN202210072138A CN114497359A CN 114497359 A CN114497359 A CN 114497359A CN 202210072138 A CN202210072138 A CN 202210072138A CN 114497359 A CN114497359 A CN 114497359A
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topological structure
tunnel junction
conductive structure
magnetic tunnel
ferromagnetic layer
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刘金营
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GTA Semiconductor Co Ltd
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GTA Semiconductor Co Ltd
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    • H10N52/101—Semiconductor Hall-effect devices
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Abstract

The invention provides a spin orbit torque magnetic random access memory and a preparation method thereof, wherein the spin orbit torque magnetic random access memory comprises a substrate, a first conductive structure, a topological structure, a magnetic tunnel junction, a second conductive structure and a third conductive structure; through the topological structure which is vertically arranged with the first conducting structure, the first end is electrically connected with the first conducting structure, the second end is electrically connected with the third conducting structure, the magnetic tunnel junction which is electrically connected is arranged at the periphery of the topological structure, and the second conducting structure which is electrically connected is arranged at the periphery of the magnetic tunnel junction, the storage capacity of the spin orbit torque magnetic random access memory can be improved, the power consumption of the spin orbit torque magnetic random access memory is reduced, and the application of the spin orbit torque magnetic random access memory is enlarged.

Description

Spin orbit torque magnetic random access memory and preparation method thereof
Technical Field
The invention belongs to the technical field of semiconductors, and relates to a spin orbit torque magnetic random access memory and a preparation method thereof.
Background
A Magnetoresistive Random Access Memory (MRAM) is a Random Access Memory device that operates on the principle of storing data using its resistance value rather than electric charges. The core of which includes a Magnetic Tunnel Junction (MTJ) structure that is controlled by the resistance of the MTJ to characterize the "0" or "1" state of the memory structure.
MTJ structures typically include a fixed ferromagnetic layer and a free ferromagnetic layer separated by an insulating tunneling barrier layer between the fixed and free ferromagnetic layers and sandwiching the MTJ structure with a top electrode and a bottom electrode such that current can flow between the top and bottom electrodes.
In quantum mechanics, the spin and atomic orbital angular momentum can interact, where the source of the force or torque is the nucleus, and the larger the atomic order, the larger the spin-orbit interaction, and the exceptionally large spin-orbit interaction also exists on the surface of some special materials, such as topological insulators. By using Spin Orbit Torque (SOT) effect to flip the magnetic moment of the free layer in MTJ, a Spin Orbit Torque magnetic random access memory (SOT-MRAM) can be prepared to form a new type of nonvolatile magnetic random access memory. However, at present, the storage capacity of the spin orbit torque magnetic random access memory is low, and the power consumption is difficult to reduce, so that the application of the spin orbit torque magnetic random access memory is limited.
Therefore, it is necessary to provide a spin-orbit torque magnetic random access memory and a method for manufacturing the same.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a spin-orbit torque magnetic random access memory and a method for manufacturing the same, which are used to solve the problems of low storage capacity and high power consumption of the spin-orbit torque magnetic random access memory in the prior art.
To achieve the above and other related objects, the present invention provides a spin-orbit-torque magnetic random access memory, comprising:
a substrate;
a first conductive structure on the substrate;
a topological structure, wherein the topological structure is positioned on the first conductive structure and is vertically arranged with the first conductive structure, the topological structure comprises a first end of the topological structure and a second end of the topological structure, and the first end of the topological structure is electrically connected with the first conductive structure;
a magnetic tunnel junction located at a periphery of the topological structure and electrically connected to the topological structure, wherein the magnetic tunnel junction comprises a fixed ferromagnetic layer, a free ferromagnetic layer, and an insulating tunneling barrier layer located between the fixed ferromagnetic layer and the free ferromagnetic layer, the fixed ferromagnetic layer and the free ferromagnetic layer are separated by the insulating tunneling barrier layer, and the free ferromagnetic layer is in contact with the topological structure;
a second conductive structure located at a periphery of the magnetic tunnel junction and electrically connected to the magnetic tunnel junction;
and the third conductive structure is positioned on the topological structure and is electrically connected with the second end of the topological structure.
Optionally, the topology comprises BixSb1-xTopological structure, x is more than 0 and less than 1; or the topological structure is a heavy metal topological structure, and the heavy metal topological structure is formed by one or more of W, Pt and Ta.
Optionally, a ratio of a thickness of the fixed ferromagnetic layer to a thickness of the free ferromagnetic layer is 2-100; the fixed ferromagnetic layer comprises Mn and one or more of Pt, Ir, Rh, Ni, Pd, Fe and Os.
Optionally, the free ferromagnetic layer has a thickness of 1nm to 1000 nm; the free ferromagnetic layer comprises one or more of Fe, NiCo, Ru, Ir, Rh, CoHf, Co, CoFeB and CoZr.
Optionally, the insulating tunneling barrier layer has a thickness of 0.5nm to 3.0 nm; the insulating tunneling barrier layer comprises one or more of MgO, AlO and AlN.
Optionally, the first conductive structure comprises one or more of Cu, Co, Al, Ti, Ta, W, Pt, Ni, Cr, Ru, TiN, TaN, and Ta; the second conductive structure comprises one or more of Cu, Co, Al, Ti, Ta, W, Pt, Ni, Cr, Ru, TiN, TaN and Ta; the third conductive structure comprises one or more of Cu, Co, Al, Ti, Ta, W, Pt, Ni, Cr, Ru, TiN, TaN and Ta.
The invention also provides a preparation method of the spin orbit torque magnetic random access memory, which comprises the following steps:
providing a substrate;
forming a first conductive structure on the substrate;
forming a topological structure on the first conductive structure, wherein the topological structure is perpendicular to the first conductive structure, the topological structure comprises a first end of the topological structure and a second end of the topological structure, and the first end of the topological structure is electrically connected with the first conductive structure;
forming a magnetic tunnel junction at the periphery of the topological structure, wherein the magnetic tunnel junction is electrically connected with the topological structure, the magnetic tunnel junction comprises a fixed ferromagnetic layer, a free ferromagnetic layer and an insulating tunneling barrier layer positioned between the fixed ferromagnetic layer and the free ferromagnetic layer, the fixed ferromagnetic layer and the free ferromagnetic layer are separated by the insulating tunneling barrier layer, and the free ferromagnetic layer is in contact with the topological structure;
forming a second conductive structure on the periphery of the magnetic tunnel junction, wherein the second conductive structure is electrically connected with the magnetic tunnel junction;
and forming a third conductive structure on the topological structure, wherein the third conductive structure is electrically connected with the second end of the topological structure.
Optionally, forming the magnetic tunnel junction comprises forming a first passivation layer before forming the magnetic tunnel junction, and forming a second passivation layer and a third passivation layer after forming the magnetic tunnel junction, wherein the magnetic tunnel junction is insulated from the first conductive structure and the second conductive structure by the first passivation layer, the second passivation layer, and the third passivation layer.
Optionally, the step of forming the magnetic tunnel junction comprises:
forming an inverted U-shaped magnetic tunnel junction covering the topological structure on the first passivation layer;
forming a second conductive structure on the periphery of the inverted U-shaped magnetic tunnel junction;
forming a second passivation layer on the second conductive structure to cover the second conductive structure and the inverted U-shaped magnetic tunnel junction;
and exposing the second end of the topological structure by adopting a planarization process and an etching process to form the magnetic tunnel junction, wherein the second end of the topological structure protrudes out of the surface of the magnetic tunnel junction.
Optionally, the topology formed comprises Bi prepared using one of MBE, CVD, MOCVD, PVD, ALDxSb1-xTopological structure, x is more than 0 and less than 1; or a heavy metal topological structure prepared by adopting one of MBE, CVD, MOCVD, PVD and ALD, wherein the heavy metal topological structure is composed of one or more of W, Pt and Ta.
As described above, the spin orbit torque magnetic random access memory and the method for manufacturing the same of the present invention includes a substrate, a first conductive structure, a topology structure, a magnetic tunnel junction, a second conductive structure, and a third conductive structure; wherein the first conductive structure is located on the substrate; the topological structure is positioned on the first conductive structure and is vertical to the first conductive structure; the topological structure comprises a topological structure first end and an opposite topological structure second end, and the topological structure first end is electrically connected with the first conductive structure; the magnetic tunnel junction is located at the periphery of the topological structure and is electrically connected with the topological structure, the magnetic tunnel junction comprises a fixed ferromagnetic layer, a free ferromagnetic layer and an insulating tunneling barrier layer located between the fixed ferromagnetic layer and the free ferromagnetic layer, and the fixed ferromagnetic layer and the free ferromagnetic layer are separated by the insulating tunneling barrier layer; the second conductive structure is positioned at the periphery of the magnetic tunnel junction and is electrically connected with the magnetic tunnel junction; the third conductive structure is located on the topological structure and electrically connected with the second end of the topological structure.
According to the spin orbit torque magnetic random access memory, the topological structure is vertically arranged with the first conductive structure, the first end of the topological structure is electrically connected with the first conductive structure, the second end of the topological structure is electrically connected with the third conductive structure, the magnetic tunnel junction electrically connected with the periphery of the topological structure is arranged, the second conductive structure electrically connected with the periphery of the magnetic tunnel junction is arranged, the storage capacity of the spin orbit torque magnetic random access memory can be improved, the power consumption of the spin orbit torque magnetic random access memory is reduced, and the application of the spin orbit torque magnetic random access memory is expanded.
Drawings
FIG. 1 is a schematic diagram of a process for fabricating a spin-orbit torque magnetic random access memory according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a substrate provided in an embodiment of the present invention.
Fig. 3 is a schematic structural diagram illustrating a first conductive structure formed in an embodiment of the invention.
Fig. 4 is a schematic structural diagram illustrating a first groove formed in a first passivation layer according to an embodiment of the invention.
FIG. 5 is a schematic diagram illustrating a topology after forming a structure according to an embodiment of the present invention.
Fig. 6 is a schematic structural diagram illustrating a first passivation layer formed in an embodiment of the invention.
FIG. 7 is a schematic diagram of a magnetic tunnel junction structure according to an embodiment of the present invention.
Fig. 8 is a schematic structural diagram illustrating a second conductive structure formed in the embodiment of the invention.
Fig. 9 is a schematic structural diagram after a planarization process is performed according to an embodiment of the invention.
FIG. 10 is a schematic structural diagram illustrating a raised topology formed after etching according to an embodiment of the present invention.
Fig. 11 is a schematic structural diagram illustrating a second groove formed in a third passivation layer according to an embodiment of the invention.
Fig. 12 is a schematic structural diagram illustrating a third conductive structure formed in the embodiment of the present invention.
Description of the element reference numerals
100 substrate
101 bottom layer silicon
102 buried oxide layer
103 top layer silicon
200 diffusion barrier layer
300 first conductive structure
410 first passivation layer
411 first groove
420 second passivation layer
430 third passivation layer
431 second groove
500 topology
600 magnetic tunnel junction
601 free ferromagnetic layer
602 insulating tunneling barrier layer
603 fixed ferromagnetic layer
700 second conductive structure
800 third conductive structure
S1-S6
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present. As used herein, "between … …" is meant to include both endpoints.
In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed freely, and the layout of the components may be more complicated.
As shown in fig. 12, the present embodiment provides a spin orbit torque magnetic random access memory, which includes: a substrate 100, a first conductive structure 300, a topology 500, a magnetic tunnel junction 600, a second conductive structure 700, and a third conductive structure 800; wherein the first conductive structure 300 is located on the substrate 100; the topology 500 is located on the first conductive structure 300 and is disposed perpendicular to the first conductive structure 300; the topology 500 comprises a first end of the topology and an opposite second end of the topology, and the first end of the topology is electrically connected to the first conductive structure 300; the magnetic tunnel junction 600 is located at the periphery of the topological structure 500 and electrically connected to the topological structure 500, the magnetic tunnel junction 600 comprises a fixed ferromagnetic layer 603, a free ferromagnetic layer 601 and an insulating tunneling barrier layer 602 located between the fixed ferromagnetic layer 603 and the free ferromagnetic layer 601, the fixed ferromagnetic layer 603 and the free ferromagnetic layer 601 are separated by the insulating tunneling barrier layer 602, and the fixed ferromagnetic layer 603 is in contact with the topological structure 500; the second conductive structure 700 is located at the periphery of the magnetic tunnel junction 600 and is electrically connected to the magnetic tunnel junction 600; the third conductive structure 800 is located on the topology 500 and electrically connected to the second end of the topology.
The spin orbit torque magnetic random access memory of this embodiment, through with first conducting structure 300 sets up perpendicularly, and first end with first conducting structure 300 electricity is connected, the second end with third conducting structure 800 electricity is connected topology structure 500, and the topology structure 500 periphery sets up the electricity and connects magnetic tunnel junction 600, and the periphery of magnetic tunnel junction 600 sets up the electricity and connects second conducting structure 700, can improve spin orbit torque magnetic random access memory's memory capacity, reduces spin orbit torque magnetic random access memory's power consumption, with the application that enlarges spin orbit torque magnetic random access memory.
As an example, the topology 500 includes BixSb1-xTopological structure, x is more than 0 and less than 1; or the topological structure 500 is a heavy metal topological structure, and the heavy metal topological structure is formed by one or more of W, Pt and Ta.
Specifically, the spin hall angle of a general heavy metal is only below 0.4, while the spin hall angle magnitude of the topological structure can reach single digit or even ten digit, for example, the spin hall angle magnitude is close to 20, but the conductivity of the topological structure usually depends only on the surface state, and the center (bulk) of the topological structure material is an insulator, so that the total conductivity (conductivity) of the topological structure is very low, and the power consumption is higher as compared with that of the heavy metal by 1-2 magnitude. But BixSb1-xTopological structure, 0 < x < 1, such as Bi with x equal to 0.90.9Sb0.1The topological structure has a large spin Hall angle and high conductance of 54, and the conductance is equivalent to that of heavy metal, so that the power consumption is low. In this embodiment, the topology 500 adopts Bi0.9Sb0.1The topological structure of the device is that the device is a topological structure,however, the present invention is not limited thereto, and Bi having x of 0.8, 0.6, 0.5, 0.3, or the like may be usedxSb1-xThe topology, or the topology using one or more combinations of heavy metals having spin-orbit action on the surface, such as W, Pt, Ta, etc., is not limited herein.
As an example, the ratio of the thickness of the fixed ferromagnetic layer 603 to the thickness of the free ferromagnetic layer 601 can be 2-100; the fixed ferromagnetic layer 603 may comprise Mn and one or more of Pt, Ir, Rh, Ni, Pd, Fe, and Os.
Specifically, in the spin orbit torque magnetic random access memory, the magnetic moment of the free ferromagnetic layer 601 in the magnetic tunnel junction 600 is flipped by the current in the vertical direction of the topology structure 500 by the spin orbit torque effect, so that the resistance value between the topology structure 500 and the second conductive structure 700 can be changed to implement data storage by using the resistance value, so as to represent the state of "0" or "1" of the spin orbit torque magnetic random access memory, thereby implementing information recording. Wherein the ratio of the thickness of the fixed ferromagnetic layer 603 to the thickness of the free ferromagnetic layer 601 can be 2, 10, 50, 100, etc.; the material of the pinned layer 603 may include Mn and one or more of Pt, Ir, Rh, Ni, Pd, Fe and Os, and the specific type is not limited herein.
As an example, the thickness of the free ferromagnetic layer 601 may be 1nm to 1000 nm; the free ferromagnetic layer 601 may include one or more of Fe, NiCo, Ru, Ir, Rh, CoHf, Co, CoFeB, and CoZr.
Specifically, the thickness of the free ferromagnetic layer 601 may be any one of 1nm, 10nm, 100nm, 500nm and 1000nm, wherein the material of the free ferromagnetic layer 601 may include one or more of Fe, NiCo, Ru, Ir, Rh, CoHf, Co, CoFeB and CoZr, and the specific kind may be selected according to the requirement, which is not limited herein.
As an example, the insulating tunneling barrier layer 602 may have a thickness of 0.5nm to 3.0 nm; the insulating tunneling barrier layer 602 may comprise one or more of MgO, AlO, and AlN.
Specifically, the thickness of the insulating tunneling barrier layer 602 may be any one of 0.5nm, 1.0nm, 2.0nm, 3.0nm, and the like, wherein the material of the insulating tunneling barrier layer 602 may include one or more of MgO, AlO, and AlN, and the specific type may be selected according to needs, which is not limited herein.
By way of example, the first conductive structure 300 includes one or more of Cu, Co, Al, Ti, Ta, W, Pt, Ni, Cr, Ru, TiN, TaN, and Ta; the second conductive structure 700 includes one or more of Cu, Co, Al, Ti, Ta, W, Pt, Ni, Cr, Ru, TiN, TaN, and Ta; the third conductive structure 800 includes one or more of Cu, Co, Al, Ti, Ta, W, Pt, Ni, Cr, Ru, TiN, TaN, and Ta.
Further, a diffusion barrier layer 200 may be further included on the upper and lower surfaces of the first conductive structure 300, the diffusion barrier layer 200 may also be included between the second conductive structure 700 and the magnetic tunnel junction 600, and the diffusion barrier layer 200 may also be included between the third conductive structure 800 and the topology structure 500, wherein the diffusion barrier layer 200 may be, for example, a Ti/TiN layer, but is not limited thereto.
Further, the gyrotron moment magnetic random access memory further includes a first passivation layer 410, a second passivation layer 420, and a third passivation layer 430, and the magnetic tunnel junction 600 is insulated from the first conductive structure 300 and the second conductive structure 700 by the first passivation layer 410, the second passivation layer 420, and the third passivation layer 430. The first passivation layer 410, the second passivation layer 420 and the third passivation layer 430 may be silicon oxide, but are not limited thereto.
Referring to fig. 1, the present embodiment further provides a method for manufacturing a spin orbit torque magnetic random access memory, including the following steps:
s1: providing a substrate;
s2: forming a first conductive structure on the substrate;
s3: forming a topological structure on the first conductive structure, wherein the topological structure is perpendicular to the first conductive structure, the topological structure comprises a first end of the topological structure and a second end of the topological structure, and the first end of the topological structure is electrically connected with the first conductive structure;
s4: forming a magnetic tunnel junction at the periphery of the topological structure, wherein the magnetic tunnel junction is electrically connected with the topological structure, the magnetic tunnel junction comprises a fixed ferromagnetic layer, a free ferromagnetic layer and an insulating tunneling barrier layer positioned between the fixed ferromagnetic layer and the free ferromagnetic layer, and the fixed ferromagnetic layer and the free ferromagnetic layer are separated by the insulating tunneling barrier layer;
s5: forming a second conductive structure on the periphery of the magnetic tunnel junction, wherein the second conductive structure is electrically connected with the magnetic tunnel junction;
s6: and forming a third conductive structure on the topological structure, wherein the third conductive structure is electrically connected with the second end of the topological structure.
Specifically, as shown in fig. 2 to fig. 12, the following steps related to the fabrication of the spin-orbit-torque magnetic random access memory in this embodiment are further described with reference to the accompanying drawings, specifically as follows:
first, as shown in fig. 2, step S1 is performed to provide a substrate 100.
Specifically, the substrate 100 may be an SOI substrate including a bottom layer silicon 101, a buried oxide layer 102 and a top layer silicon 103, but may also be a silicon substrate, a sapphire substrate, a silicon carbide substrate, etc., and the specific type of the substrate 100 is not limited herein.
Next, as shown in fig. 3, step S2 is performed to form a first conductive structure 300 on the substrate 100.
Specifically, as shown in fig. 3, a diffusion barrier layer 200 may be formed on the substrate 100 by depositing Ti/TiN by MOCVD, then forming the first conductive structure 300, such as a tungsten metal layer, by CVD, and then forming the diffusion barrier layer 200 by depositing Ti/TiN by MOCVD. The first conductive structure 300 may be formed of one or more of Cu, Co, Al, Ti, Ta, W, Pt, Ni, Cr, Ru, TiN, TaN, and Ta, and the types of the first conductive structure 300 and the diffusion barrier layer 200 are not limited herein.
Next, as shown in fig. 4 to 5, step S3 is performed to form a topology 500 on the first conductive structure 300, wherein the topology 500 is disposed perpendicular to the first conductive structure 300, wherein the topology 500 includes a first end and an opposite second end, and the first end is electrically connected to the first conductive structure 300.
Specifically, as shown in fig. 4, the first passivation layer 410 may be deposited first, and the first passivation layer 410 may include an insulating dielectric layer such as a silicon oxide layer prepared by a chemical vapor deposition method, and the preparation method, the type and the thickness of the first passivation layer 410 are not limited herein. Then, the first passivation layer 410 may be etched by a process such as dry etching, so as to obtain a first recess 411 in the first passivation layer 410, which exposes the diffusion barrier layer 200, so that a subsequently prepared element layer may be electrically connected to the first conductive structure 300. Then, referring to FIG. 5, the topology 500 can be fabricated using Molecular Beam Epitaxy (MBE) or one of CVD, MOCVD, PVD, ALD, such as Bi0.9Sb0.1The topology, but the type of topology is not limited thereto, e.g., the topology 500 may comprise BixSb1-xTopology, 0 < x < 1, such as x ═ 0.9, 0.8, 0.6, 0.5, 0.3, etc.; or the topology 500 is a heavy metal topology prepared by one of MBE, CVD, MOCVD, PVD and ALD, and the heavy metal topology may be formed by one or more of W, Pt and Ta, which is not limited herein.
Next, as shown in fig. 7, step S4 is executed to form a magnetic tunnel junction 600 on the periphery of the topology structure 500, and the magnetic tunnel junction 600 is electrically connected to the topology structure 500, wherein the magnetic tunnel junction 600 includes a pinned ferromagnetic layer 603, a free ferromagnetic layer 601, and an insulating tunneling barrier layer 602 located between the pinned ferromagnetic layer 603 and the free ferromagnetic layer 601, the pinned ferromagnetic layer 603 and the free ferromagnetic layer 601 are separated by the insulating tunneling barrier layer 602, and the free ferromagnetic layer 601 is in contact with the topology structure 500.
Specifically, as shown in fig. 6, before forming the magnetic tunnel junction 600, a step of etching the first passivation layer 410 is further included, so that the magnetic tunnel junction 600 is insulated from the first conductive structure 300 by the first passivation layer 410. The first passivation layer 410 may include, but is not limited to, silicon oxide.
As an example, the step of forming the magnetic tunnel junction 600 may include:
first, as shown in fig. 7, an inverted U-shaped magnetic tunnel junction is formed on the first passivation layer 410 to wrap the topology structure 500, wherein ALD may be sequentially used to form the free ferromagnetic layer 601, the insulating tunneling barrier layer 602, and the pinned ferromagnetic layer 603.
Further, a diffusion barrier layer 200, such as but not limited to a Ti/TiN layer, may be formed on the inverted U-shaped magnetic tunnel junction.
Next, as shown in fig. 8, the second conductive structure 700 is formed at the periphery of the inverted U-shaped magnetic tunnel junction, and the second conductive structure 700 may be formed by one or more of Cu, Co, Al, Ti, Ta, W, Pt, Ni, Cr, Ru, TiN, TaN and Ta, but is not limited thereto.
Next, as shown in fig. 9, a second passivation layer 420 covering the second conductive structure 700 and the inverted U-shaped magnetic tunnel junction is formed on the second conductive structure 700, so that the magnetic tunnel junction 600 is insulated from the second conductive structure 700 by the second passivation layer 420. Next, a planarization process, such as a CMP process, is performed, and referring to fig. 10, an etching process, such as a dry etching, is performed to expose the second end of the topology, so as to form the magnetic tunnel junction 600, and the second end of the topology protrudes from the surface of the magnetic tunnel junction 600.
Further, as shown in fig. 11, a third passivation layer 430 is formed, and the third passivation layer 430 may include an insulating dielectric layer such as a silicon oxide layer prepared by a chemical vapor deposition method, and the preparation method, the type and the thickness of the third passivation layer 430 are not limited herein.
A second recess 431 may then be formed in the third passivation layer 430 using dry etching to expose the topology second end for facilitating electrical connection of subsequently formed components to the topology 500.
Next, as shown in fig. 12, a third conductive structure 800 is formed on the topology 500, wherein the third conductive structure 800 is electrically connected to the second end of the topology, and the third conductive structure 800 may comprise one or more of Cu, Co, Al, Ti, Ta, W, Pt, Ni, Cr, Ru, TiN, TaN, and Ta.
Further, before forming the third conductive structure 800, a diffusion barrier layer may be formed by depositing Ti/TiN on the second end of the topology using MOCVD, but not limited thereto.
For the material, thickness and structure of each layer, reference may be made to the spin-orbit torque magnetic random access memory, which is not described herein.
In summary, the spin orbit torque magnetic random access memory and the method for manufacturing the same of the present invention include a substrate, a first conductive structure, a topology structure, a magnetic tunnel junction, a second conductive structure, and a third conductive structure; wherein the first conductive structure is located on the substrate; the topological structure is positioned on the first conductive structure and is vertical to the first conductive structure; the topological structure comprises a topological structure first end and an opposite topological structure second end, and the topological structure first end is electrically connected with the first conductive structure; the magnetic tunnel junction is positioned at the periphery of the topological structure and is electrically connected with the topological structure, the magnetic tunnel junction comprises a fixed ferromagnetic layer, a free ferromagnetic layer and an insulating tunneling barrier layer positioned between the fixed ferromagnetic layer and the free ferromagnetic layer, and the fixed ferromagnetic layer and the free ferromagnetic layer are separated by the insulating tunneling barrier layer; the second conductive structure is positioned at the periphery of the magnetic tunnel junction and is electrically connected with the magnetic tunnel junction; the third conductive structure is located on the topological structure and electrically connected with the second end of the topological structure.
According to the spin orbit torque magnetic random access memory, the topological structure is vertically arranged with the first conductive structure, the first end of the topological structure is electrically connected with the first conductive structure, the second end of the topological structure is electrically connected with the third conductive structure, the magnetic tunnel junction electrically connected with the periphery of the topological structure is arranged, the second conductive structure electrically connected with the periphery of the magnetic tunnel junction is arranged, the storage capacity of the spin orbit torque magnetic random access memory can be improved, the power consumption of the spin orbit torque magnetic random access memory is reduced, and the application of the spin orbit torque magnetic random access memory is expanded.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (10)

1. A spin-orbit torque magnetic random access memory, comprising:
a substrate;
a first conductive structure on the substrate;
a topological structure, wherein the topological structure is positioned on the first conductive structure and is vertically arranged with the first conductive structure, the topological structure comprises a first end of the topological structure and a second end of the topological structure, and the first end of the topological structure is electrically connected with the first conductive structure;
a magnetic tunnel junction located at a periphery of the topological structure and electrically connected to the topological structure, wherein the magnetic tunnel junction comprises a fixed ferromagnetic layer, a free ferromagnetic layer, and an insulating tunneling barrier layer located between the fixed ferromagnetic layer and the free ferromagnetic layer, the fixed ferromagnetic layer and the free ferromagnetic layer are separated by the insulating tunneling barrier layer, and the free ferromagnetic layer is in contact with the topological structure;
a second conductive structure located at a periphery of the magnetic tunnel junction and electrically connected to the magnetic tunnel junction;
and the third conductive structure is positioned on the topological structure and is electrically connected with the second end of the topological structure.
2. The spin-orbit torque magnetic random access memory of claim 1, wherein: the topology comprises BixSb1-xTopological structure, x is more than 0 and less than 1; or the topological structure is a heavy metal topological structure, and the heavy metal topological structure is formed by one or more of W, Pt and Ta.
3. The spin-orbit-torque magnetic random access memory of claim 1, wherein: a ratio of a thickness of the fixed ferromagnetic layer to a thickness of the free ferromagnetic layer is 2-100; the fixed ferromagnetic layer comprises Mn and one or more of Pt, Ir, Rh, Ni, Pd, Fe and Os.
4. The spin-orbit torque magnetic random access memory of claim 1, wherein: the thickness of the free ferromagnetic layer is 1nm-1000 nm; the free ferromagnetic layer comprises one or more of Fe, NiCo, Ru, Ir, Rh, CoHf, Co, CoFeB and CoZr.
5. The spin-orbit torque magnetic random access memory of claim 1, wherein: the thickness of the insulating tunneling barrier layer is 0.5nm-3.0 nm; the insulating tunneling barrier layer comprises one or more of MgO, AlO and AlN.
6. The spin-orbit torque magnetic random access memory of claim 1, wherein: the first conductive structure comprises one or more of Cu, Co, Al, Ti, Ta, W, Pt, Ni, Cr, Ru, TiN, TaN and Ta; the second conductive structure comprises one or more of Cu, Co, Al, Ti, Ta, W, Pt, Ni, Cr, Ru, TiN, TaN and Ta; the third conductive structure comprises one or more of Cu, Co, Al, Ti, Ta, W, Pt, Ni, Cr, Ru, TiN, TaN and Ta.
7. A method for preparing a spin orbit torque magnetic random access memory is characterized by comprising the following steps:
providing a substrate;
forming a first conductive structure on the substrate;
forming a topological structure on the first conductive structure, wherein the topological structure is perpendicular to the first conductive structure, the topological structure comprises a first end of the topological structure and a second end of the topological structure, and the first end of the topological structure is electrically connected with the first conductive structure;
forming a magnetic tunnel junction at the periphery of the topological structure, wherein the magnetic tunnel junction is electrically connected with the topological structure, the magnetic tunnel junction comprises a fixed ferromagnetic layer, a free ferromagnetic layer and an insulating tunneling barrier layer positioned between the fixed ferromagnetic layer and the free ferromagnetic layer, the fixed ferromagnetic layer and the free ferromagnetic layer are separated by the insulating tunneling barrier layer, and the free ferromagnetic layer is in contact with the topological structure;
forming a second conductive structure on the periphery of the magnetic tunnel junction, wherein the second conductive structure is electrically connected with the magnetic tunnel junction;
and forming a third conductive structure on the topological structure, wherein the third conductive structure is electrically connected with the second end of the topological structure.
8. The method for manufacturing a spin-orbit torque magnetic random access memory according to claim 7, wherein: the method includes forming a first passivation layer before forming the magnetic tunnel junction and forming a second passivation layer and a third passivation layer after forming the magnetic tunnel junction, the magnetic tunnel junction being insulated from the first conductive structure and the second conductive structure by the first passivation layer, the second passivation layer, and the third passivation layer.
9. The method for manufacturing a spin-orbit torque magnetic random access memory according to claim 8, wherein: the step of forming the magnetic tunnel junction comprises:
forming an inverted U-shaped magnetic tunnel junction covering the topological structure on the first passivation layer;
forming a second conductive structure on the periphery of the inverted U-shaped magnetic tunnel junction;
forming a second passivation layer on the second conductive structure to cover the second conductive structure and the inverted U-shaped magnetic tunnel junction;
and exposing the second end of the topological structure by adopting a planarization process and an etching process to form the magnetic tunnel junction, wherein the second end of the topological structure protrudes out of the surface of the magnetic tunnel junction.
10. The method of manufacturing a spin-orbit-torque magnetic random access memory according to claim 7, wherein: the topology structure comprises Bi prepared by adopting one of MBE, CVD, MOCVD, PVD and ALDxSb1-xTopological structure, x is more than 0 and less than 1; or a heavy metal topological structure prepared by adopting one of MBE, CVD, MOCVD, PVD and ALD, wherein the heavy metal topological structure is composed of one or more of W, Pt and Ta.
CN202210072138.7A 2022-01-21 2022-01-21 Spin orbit torque magnetic random access memory and preparation method thereof Pending CN114497359A (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110224058A (en) * 2018-03-02 2019-09-10 三星电子株式会社 Magnetic device and the method that the magnetic junction of magnetic device is written

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110224058A (en) * 2018-03-02 2019-09-10 三星电子株式会社 Magnetic device and the method that the magnetic junction of magnetic device is written

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