CN114496744A - Diamond film transfer device and transfer process, diamond film strain device based on indirect pre-stretching and construction method - Google Patents
Diamond film transfer device and transfer process, diamond film strain device based on indirect pre-stretching and construction method Download PDFInfo
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- CN114496744A CN114496744A CN202210087749.9A CN202210087749A CN114496744A CN 114496744 A CN114496744 A CN 114496744A CN 202210087749 A CN202210087749 A CN 202210087749A CN 114496744 A CN114496744 A CN 114496744A
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 122
- 239000010432 diamond Substances 0.000 title claims abstract description 122
- 238000012546 transfer Methods 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000008569 process Effects 0.000 title claims abstract description 17
- 238000010276 construction Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 238000006073 displacement reaction Methods 0.000 claims abstract description 22
- 239000002313 adhesive film Substances 0.000 claims abstract description 18
- 230000005611 electricity Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 20
- 238000004088 simulation Methods 0.000 claims description 17
- 238000002474 experimental method Methods 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 9
- 239000002861 polymer material Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 230000006698 induction Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 101
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 4
- 229920006158 high molecular weight polymer Polymers 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a diamond film transfer device and a transfer process, and a device and a method for generating diamond film strain based on indirect pretension. The transfer device includes a donor device and a recipient device. The device for generating the strain of the diamond film based on the indirect pre-stretching is a controlled device. In the diamond film transfer device, a transfer seal adsorbs a diamond film on a donor substrate through a photosensitive/thermosensitive release adhesive film, and releases a film to be transferred on a receiver substrate through light/heat after transfer. In the device and the method for generating the diamond film strain based on indirect pre-stretching, the receiver substrate is stretched to drive the diamond film to stretch through displacement/force/heat/electricity and other modes, so that the film strain is generated. The invention can realize the rapid batch transfer of the films to be transferred; meanwhile, the method can adapt to different intervals among the films to be transferred, improve the universality of the film transfer substrate and fill the blank of realizing batch diamond film stretching.
Description
Technical Field
The invention relates to the field of semiconductor thin film devices, in particular to a diamond thin film transfer device and a transfer process, and a device and a method for generating diamond thin film strain based on indirect pre-stretching.
Background
The diamond film is known as the "Everest peak" of electronic and photonic materials due to its ultra-high thermal conductivity, ultra-high dielectric breakdown strength, ultra-large carrier mobility and ultra-wide band gap, and is one of the basic materials for realizing chips in the "post-Mole" era, and has become an industry-recognized "ultimate" semiconductor material. The doping challenge caused by the large band gap and the crystal structure thereof is a main obstacle for realizing the preparation of the diamond film electro-optical device. One potential solution is to apply an elastic lattice strain to change the material properties. The controlled introduction of the film microstructure can further improve the electro-optic properties of the material. However, diamond possesses a weak deformability and relatively high brittleness, and these limitations have stimulated research into the pathways and mechanisms by which ultra-large elastic deformations occur. The exploration of brittle materials such as diamond films and the like requires the development of a new method for elastic strain engineering, so that the enhancement of engineering energy band structures and electrical and optical characteristics can be realized. However, how to give the elastic strain of the diamond film becomes a great challenge. Past attempts to strain diamond have typically been accomplished with small sample bends, which have a non-uniform strain distribution and thus produce a highly localized high strain field. Uniform elastic strain is often the initial state required for device fabrication, which is difficult to achieve experimentally directly in the original sample.
Disclosure of Invention
Aiming at the technical problems, the invention provides a diamond film transfer device and a transfer process, and a device and a method for generating diamond film strain based on indirect pre-stretching, so as to solve the problem that the elastic strain of a diamond film cannot be given in the prior art. The present invention is supplemented by a detailed computational simulation involving Finite Element Methods (FEM)/experiments to quantify the potential mechanisms of local tensile and compressive stress and strain changes and mechanical deformation.
The invention provides a diamond film transfer device in a first aspect, which comprises a donor device and a receiver device;
the donor device sequentially comprises a donor substrate (103), a transfer seal and a diamond film (102) from bottom to top;
the diamond film is grown on a donor substrate (103);
the receptor device comprises a receptor substrate (202) provided with a fixed adhesive film (203);
the diamond film (102) is transferred from a donor substrate (103) to a receiver substrate (202) by a transfer stamp.
Further, the material of the donor substrate (103) comprises PI, diamond, silicon base and metal base.
Further, the material of the acceptor substrate (202) comprises PDMS, ceramic, silicon base and metal base.
Further, the transfer stamp comprises a transparent glass substrate (101) and a photosensitive/thermosensitive release adhesive film (104) provided on the substrate; the photosensitive/thermosensitive release bonding film (104) adheres to the diamond film through capillary force to realize extraction of the diamond film; the release of the diamond film is achieved by thermally deforming the photosensitive/thermosensitive release adhesive film (104) by supplying a laser beam to the transparent glass substrate.
Further, the photosensitive/thermosensitive release adhesive film (104) is a film of a photopolymer material. Preferably, the film of photopolymer material is selected from acrylamide based high molecular polymer films.
Further, the fixing adhesive film (203) is a film made of a high molecular polymer material. Preferably, the film of high molecular weight polymer material is selected from acrylamide-based high molecular weight polymer films.
Further, the receptor substrate (202) is "H" shaped.
Furthermore, the diamond film is positioned at the center of the receiver substrate, and the film is in a long strip shape.
Further, the diamond film is grown by a CVD method.
The second aspect of the present invention provides the method for transferring a diamond film of the diamond film transfer apparatus of the first aspect, comprising the steps of:
step 1, an arrangement process, namely arranging a diamond film grown by a CVD method on a certain scale on a donor substrate;
step 2, picking up, namely adsorbing the diamond film to be transferred on the donor substrate through the photosensitive/thermosensitive release bonding film on the transfer stamp, and separating the diamond film from the donor substrate;
and 3, a printing process, namely printing the separated diamond film on the receiver substrate through the photosensitive/thermosensitive release bonding film on the transfer stamp to realize the transfer of the diamond film.
Further, the pick-up process may employ light/heat.
Further, the printing process may employ an optical/thermal approach.
A third aspect of the present invention provides an apparatus for creating strain in a diamond film based on indirect pre-stretching, the apparatus being the acceptor apparatus of the first aspect.
A fourth aspect of the present invention provides a method of constructing the apparatus of the third aspect, comprising the steps of:
step 1, constructing an experiment or simulation model of a receiver device, and carrying out displacement/force/heat load and other loads on the experiment or simulation model;
wherein:
when displacement experiments or simulation are carried out, the opposite two side surfaces of the receiver substrate are loaded, the bottom surface of the receiver substrate is restrained, and the loading of the displacement can be surface displacement;
when a force experiment or simulation is carried out, the opposite two side surfaces of the receptor substrate are loaded, the bottom surface of the receptor substrate is restrained, and the force loading can be a surface force;
when a thermal experiment or simulation is carried out, the whole receiver device is loaded, the bottom surface of the receiver device is restrained, and the thermal loading can be linear temperature rise;
step 2, extracting and summarizing the displacement/force/heat/electricity and other results in the direction, calculating the surface area and the length by the diamond film, and then obtaining the strain rate in any direction by the basic equation of the displacement/force/heat/electricity and the like;
step 3, solving the parameter equation as shown below
εx＝ΔLx/Lx
εy＝ΔLy/Ly
εz＝ΔLz/Lz
εxIs the strain of the diamond film in the x direction;
εyis the strain of the diamond film in the y direction;
εzis the strain of the diamond film in the z direction;
l is the length of the diamond film sample;
Δ L is a change value of the length of the diamond film sample.
Further, the experimental or simulation model in step 1 includes: finite element model and experimental sample of diamond film;
the finite element model comprises size parameters, material attribute information, boundary function information and load information of the physical entity packaging device;
the experimental sample includes the dimensional parameters and material parameters of the device.
Further, the stress load applied to the sample in the step 1 should be 0.01N, but is not limited to this magnitude.
Further, the temperature load applied to the sample in the step 1 is 25 to 550 ℃, but is not limited to this range.
Further, the method also comprises the following steps: and (4) counting and analyzing the displacement result, and finally accurately obtaining the displacement/force/heat/electricity and other change values of the sample.
Further, if the thickness of the diamond film is too different from the length and width, the strain in the thickness direction can be measured by stacking a plurality of samples.
The invention has the following beneficial effects:
the invention can realize rapid batch transfer of the film to be transferred by adopting a light/heat mode; meanwhile, the film transfer substrate can adapt to different distances between films to be transferred, so that the universality of the film transfer substrate is improved; and the blank of realizing batch diamond film stretching is filled, the types of the diamond film stretching samples are enriched, and a foundation is laid for the performance test of other materials and the device manufacture of the film under the working conditions of stretching and the like.
Drawings
In order to more clearly illustrate the technical solution in the present embodiment, the drawings needed to be used in the description of the embodiment will be briefly introduced below, and it is obvious that the drawings in the following description are one embodiment of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
FIG. 1 is a front view of a master device in a diamond film transfer apparatus according to an embodiment of the present invention;
FIG. 2 is a flow chart of a transfer process of the diamond film transfer apparatus according to the embodiment of the present invention;
FIG. 3 is a front view of a device subjected to a main device and generating a strain of a diamond film based on indirect pre-stretching in a diamond film transfer device according to an embodiment of the present invention;
FIG. 4 is a top view of an apparatus for generating strain in a diamond film based on indirect pre-stretching according to an embodiment of the present invention;
FIG. 5 is a structure of a transfer stamp;
FIG. 6 is a flow chart of transfer;
FIG. 7 is a 1/4 two-dimensional finite element model of an apparatus and method for generating diamond film strain based on indirect pre-stretching according to an embodiment of the present invention;
FIG. 8 is a result of loading a two-dimensional finite element model in the apparatus and the method for generating diamond film strain based on indirect pre-stretching according to the embodiment of the present invention.
Reference numerals: 101-transparent glass substrate, 102-diamond film, 103-donor substrate, 104-photosensitive/thermosensitive release adhesive film, 202-receptor substrate, 203-fixing adhesive film.
Detailed Description
In order to better understand the technical solution, the technical solution will be described in detail with reference to the drawings and the specific embodiments. The content of the invention is not limited to this at all.
Example 1
A structure of a diamond film transfer device, as shown in figures 1 and 2, comprises a donor device and a receiver device;
the donor device sequentially comprises a donor substrate (103), a transfer seal and a diamond film (102) from bottom to top;
the diamond film is grown on a donor substrate (103);
the receptor device comprises a receptor substrate (202) provided with a fixed adhesive film (203);
the diamond film (102) is transferred from the donor substrate (103) to the receiver substrate (202) by a transfer stamp.
In this embodiment, the material of the donor substrate (103) includes PI, diamond, silicon-based, and metal-based. The acceptor substrate (202) is silicon-based.
The transfer stamp comprises a transparent glass substrate (101) and a photosensitive/thermosensitive release adhesive film (104) (the structure is shown in figure 5) arranged on the substrate, and the area of the photosensitive/thermosensitive release adhesive film (104) is smaller than that of the transparent glass substrate (101). The photosensitive/thermosensitive release bonding film (104) adheres to the diamond film through capillary force to realize extraction of the diamond film; the release of the diamond film is achieved by thermally deforming the photosensitive/thermosensitive release adhesive film (104) by supplying a laser beam to the transparent glass substrate.
The transfer stamp is used for picking up a diamond film device and putting the diamond film device on a receiver substrate, and the main principle is that the flexible stamp expands due to thermal mismatch between the laser-driven stamp and the diamond film, so that the interface of the stamp is delaminated from the diamond film, and the separation of the stamp from the diamond film is realized. The transfer process comprises five steps (as shown in fig. 6): 1) moving the stamp to be above the primary diamond substrate; 2) the seal adheres the diamond film from the primary base of the diamond through capillary force; 3) the seal is transferred to the upper part of the receiver substrate of the diamond film, and a laser beam is provided at the position of the transparent glass of the seal; 4) the heat correlation-flexible high polymer material in the seal is heated to expand, so that the diamond film and the flexible high polymer material are relatively separated, and the diamond film is moved away; the diamond film is contacted with the receptor substrate, so that the diamond film is transferred to the receptor substrate; 5) and (4) removing the laser beam in the stamp, recovering the heat-related high polymer material, and removing the stamp.
The photosensitive/thermosensitive release adhesive film (104) is a film of a photopolymer material. In this example, a film made of an acrylamide-based high molecular weight polymer was used.
The fixed adhesive film (203) is made of a high molecular polymer material. In this example, a film made of an acrylamide-based high molecular weight polymer was used.
The receptor substrate (202) is "H" shaped, as shown in fig. 4.
The diamond film is positioned at the center of the acceptor substrate and is in a long strip shape.
The diamond film is grown by adopting a CVD method.
The method for transferring the diamond film by the diamond film transfer device comprises the following steps (shown in figure 2):
step 1, an arrangement process, namely arranging a diamond film grown by a CVD method on a certain scale on a donor substrate;
step 2, picking up, namely adsorbing the diamond film to be transferred on the donor substrate through the photosensitive/thermosensitive release bonding film on the transfer stamp, and separating the diamond film from the donor substrate;
and 3, a printing process, namely printing the separated diamond film on the receiver substrate through the photosensitive/thermosensitive release bonding film on the transfer stamp to realize the transfer of the diamond film.
Both the pick-up and printing processes use light/heat.
Example 2
This example provides a device for generating strain in a diamond film based on indirect pre-stretching, which is the receptor device of example 1.
The construction method of the device, see fig. 5, comprises the following steps:
step 1, constructing an experiment or simulation model of a receiver device, and carrying out displacement/force/heat load and other loads on the experiment or simulation model.
Wherein:
when displacement experiments or simulation are carried out, the opposite two side surfaces of the receptor substrate are loaded, the bottom surface of the receptor substrate is restrained, the loading of the displacement can be surface displacement, and the displacement load applied to the sample is 4um, but the method and the size are not limited;
in the force experiment or simulation, the opposite two side surfaces of the receptor substrate are loaded, the bottom surface of the receptor substrate is restrained, the force loading can be surface force, and the force load applied to the sample is 0.01N, but the method and the size are not limited;
in performing thermal experiments or simulations, the entire receiver device should be loaded, with its bottom surface constrained, and the thermal loading may be a linear temperature increase, with a temperature load of 25-550 ℃ applied to the sample, but is not limited to this manner and this range.
The present embodiment takes displacement loading as an example.
And 2, extracting the displacement/force/heat/electricity results in the direction, performing inductive statistics, calculating the surface area and the length of the diamond film, and then obtaining the strain rate in any direction through a basic equation of displacement/force/heat/electricity and the like. This case takes the calculation of the strain rate in the loading direction as an example.
Step 3, solving the parameter equation as shown below
εx＝ΔLx/Lx
εy＝ΔLy/Ly
εz＝ΔLz/Lz
εxIs the strain of the diamond film in the x direction;
εyis the strain of the diamond film in the y direction;
εzis the strain of the diamond film in the z direction;
l is the length of the diamond film sample;
delta L is the change value of the length of the diamond film sample;
the diamond film strain parameters can be calculated as follows: strain of diamond film to epsilonx0.012. The results expected to occur according to the above-described pretensioning process are shown in fig. 8.
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.
Claims (10)
1. A diamond film transfer device is characterized by comprising a donor device and a receiver device;
the donor device sequentially comprises a donor substrate (103), a transfer seal and a diamond film (102) from bottom to top;
the diamond film is grown on a donor substrate (103);
the receptor device comprises a receptor substrate (202) provided with a fixed adhesive film (203);
the diamond film (102) is transferred from the donor substrate (103) to the receiver substrate (202) by a transfer stamp.
2. The apparatus of claim 1, wherein: the material of the donor substrate (103) comprises PI, diamond, silicon base and metal base.
3. The apparatus of claim 1, wherein: the material of the acceptor substrate (202) comprises PDMS, ceramic, silicon base and metal base.
4. The apparatus of claim 1, wherein: the transfer stamp comprises a transparent glass substrate (101) and a photosensitive/thermosensitive release adhesive film (104) arranged on the substrate; the photosensitive/thermosensitive release bonding film (104) adheres to the diamond film through capillary force to realize extraction of the diamond film; the flexible high polymer material is thermally deformed to realize the separation of the diamond film by supplying a laser beam to the transparent glass substrate (101).
5. The apparatus of claim 4, wherein: the photosensitive/thermosensitive release adhesive film (104) is a film of a photopolymer material.
6. The apparatus of claim 1, wherein: the fixing adhesive film (203) is made of a high molecular polymer material.
7. The method for transferring a diamond film by using a diamond film transfer device according to any one of claims 1 to 6, comprising the steps of:
step 1, an arrangement process, namely arranging a diamond film grown by a CVD method on a certain scale on a donor substrate;
step 2, picking up, namely adsorbing the diamond film to be transferred on the donor substrate through the photosensitive/thermosensitive release bonding film on the transfer stamp, and separating the diamond film from the donor substrate;
and 3, a printing process, namely printing the separated diamond film on the receiver substrate through the photosensitive/thermosensitive release bonding film on the transfer stamp to realize the transfer of the diamond film.
8. A device for generating strain in a diamond film based on indirect pre-stretching, characterized in that the device is the receiver device according to claim 1.
9. The method for constructing a device for generating the strain of a diamond film based on the indirect prestretching as claimed in claim 8, which comprises the steps of:
step 1, constructing an experiment or simulation model of a receiver device, and carrying out displacement/force/thermal load loading on the experiment or simulation model;
wherein,
when displacement experiments or simulation are carried out, the opposite two side surfaces of the receptor substrate are loaded, and the bottom surface of the receptor substrate is restrained to apply displacement loads;
when force experiments or simulation are carried out, the opposite two side surfaces of the receptor substrate are loaded, and the bottom surface of the receptor substrate is restrained to apply surface load;
when thermal experiments or simulation are carried out, the whole receiver device is loaded, and the bottom surface of the receiver device is restrained to apply temperature load;
step 2, extracting displacement/force/heat/electricity results in the obtained directions, carrying out induction statistics, simultaneously calculating the surface area and the length by using the diamond film, and then obtaining the strain rate in any direction by using a basic equation of displacement/force/heat/electricity;
step 3, solving the parameter equation as follows:
εx＝ΔLx/Lx
εy＝ΔLy/Ly
εz＝ΔLz/Lz
εxis the strain of the diamond film in the x direction;
εyis the strain of the diamond film in the y direction;
εzis the strain of the diamond film in the z direction;
l is the length of the diamond film sample;
Δ L is a change value of the length of the diamond film sample.
10. The construction method according to claim 9, wherein: the experimental or simulation model in the step 1 comprises: finite element model and experimental sample of diamond film;
the finite element model comprises size parameters, material attribute information, boundary function information and load information of a physical entity packaging device;
the experimental sample includes the dimensional parameters and material parameters of the device.
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| CN202210087749.9A CN114496744B (en) | 2022-01-25 | 2022-01-25 | Diamond film transfer device and transfer process, and indirect prestretching-based diamond film strain device and construction method |
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| CN202210087749.9A CN114496744B (en) | 2022-01-25 | 2022-01-25 | Diamond film transfer device and transfer process, and indirect prestretching-based diamond film strain device and construction method |
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| CN114496744B (en) | 2023-07-28 |
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