CN114488709A

CN114488709A - Exposure apparatus and method of manufacturing article

Info

Publication number: CN114488709A
Application number: CN202210113165.4A
Authority: CN
Inventors: 松田丰; 玉置公寿
Original assignee: Canon Inc
Current assignee: Canon Inc
Priority date: 2018-04-03
Filing date: 2019-04-03
Publication date: 2022-05-13
Also published as: KR20190116071A; JP6814174B2; US20190302630A1; TW201942685A; US11187993B2; JP2019184681A; CN110347015A; TWI726294B; KR102520399B1; CN110347015B

Abstract

The invention relates to an exposure apparatus and a method of manufacturing an article. The present invention provides an exposure apparatus including a forming unit configured to form a mark on a resist film on a substrate, and a control unit configured to perform an exposure process to form a latent image by projecting a pattern onto a target position on the resist film on the substrate based on a measurement position of the mark, wherein the control unit causes the forming unit to perform a forming process of forming a second mark on a second resist film so that the second mark will be located at a position on the rework substrate that is deviated from a position of the first mark, before performing the exposure process on the rework substrate on which the second resist film has been formed after removing the first resist film having the first mark.

Description

Exposure apparatus and method of manufacturing article

The present application is a divisional application of an invention patent application having an application date of 2019, 4/3, application No. 201910263549.2, entitled "exposure apparatus and method of manufacturing article".

Technical Field

The present invention relates to an exposure apparatus and a method of manufacturing an article.

Background

When an apparatus (semiconductor apparatus, liquid crystal display apparatus, thin film magnetic head, or the like) is to be manufactured by using a photolithography technique, an exposure device is used which transfers a pattern of a mask (reticle) onto a substrate on which a photoresist has been coated by projecting the pattern onto the substrate via a projection optical system.

In recent years, an exposure apparatus has been proposed in japanese patent laid-open No. 11-307449, which forms a single layer pattern by performing an exposure process on a single layer a plurality of times and adding up latent image patterns formed in the respective exposure processes without performing a development process. In such an exposure apparatus, Alignment Mark Former (AMF) marks are formed before the first exposure process is performed, and the relative positions of latent image patterns formed in the respective exposure processes are managed (controlled) based on these Alignment marks.

In an exposure apparatus, there may be a case where an abnormality occurs in a photoresist (i.e., a resist film) coated on a substrate or in an exposure condition (exposure state) at the time of exposure processing. In this case, a process of removing the resist film that has been coated from the substrate and coating (regenerating) the resist film on the substrate again is performed to prevent defects from being generated in the apparatus manufactured from the substrate. Such a substrate regenerated through the resist film is called a "reworked substrate" and is reused.

However, in some cases, the influence of the alignment mark formed before the rework may remain in the reworked substrate. This is because the properties of the substrate surface may have changed due to the formation of the alignment marks. Therefore, due to the influence of the alignment mark formed before the rework, the detection accuracy of the alignment mark formed again on the rework substrate may be reduced, and the alignment mark formed again may become undetectable.

Disclosure of Invention

The invention provides an exposure device which is beneficial to reuse of a reworked substrate.

According to a first aspect of the present invention, there is provided an exposure apparatus comprising: a forming unit configured to form a mark on a resist film on a substrate; a measuring unit configured to measure a position of the mark formed by the forming unit; and a control unit configured to perform an exposure process to form a latent image by projecting a pattern onto a target position on the resist film on the substrate based on the position of the mark measured by the measurement unit, wherein the control unit causes the forming unit to perform a forming process of forming a second mark on the second resist film so that the second mark will be located at a position on the rework substrate that is offset from the position of the first mark, before performing the exposure process on the rework substrate on which the second resist film has been formed after removing the first resist film having the first mark.

According to a second aspect of the present invention, there is provided an exposure apparatus comprising: a forming unit configured to form a mark on a resist film on a substrate; a measuring unit configured to measure a position of the mark formed by the forming unit; and a control unit configured to perform an exposure process to form a latent image by projecting a pattern onto a target position on the resist film on the substrate based on the position of the mark measured by the measurement unit, wherein the control unit determines whether the measurement unit can measure the position of the first mark formed on the resist film, controls the forming unit to form the second mark at a position on the resist film deviated from the position of the first mark when the measurement unit cannot measure the position of the first mark, and controls the exposure process based on the position of the second mark measured by the measurement unit.

According to a third aspect of the present invention, there is provided a method of manufacturing an article, the method of manufacturing comprising: exposing the substrate by using an exposure device; developing the exposed substrate; and manufacturing an article from the developed substrate, wherein the exposure apparatus includes: the image forming apparatus includes a forming unit configured to form marks on a resist film on a substrate, a measuring unit configured to measure positions of the marks formed by the forming unit, and a control unit configured to perform an exposure process to form a latent image by projecting a pattern onto a target position on the resist film on the substrate based on the positions of the marks measured by the measuring unit, wherein the control unit causes the forming unit to perform a forming process of forming a second mark on a second resist film so that the second mark will be located at a position on the rework substrate that is offset from a position of the first mark, before performing the exposure process on the rework substrate on which the second resist film has been formed after removing the first resist film having the first mark.

According to a fourth aspect of the present invention, there is provided a method of manufacturing an article, the method of manufacturing comprising: exposing the substrate by using an exposure device; developing the exposed substrate; and manufacturing an article from the developed substrate, wherein the exposure apparatus includes: a forming unit configured to form a mark on a resist film on a substrate; a measuring unit configured to measure a position of the mark formed by the forming unit; and a control unit configured to perform an exposure process to form a latent image by projecting a pattern onto a target position on the resist film on the substrate based on the position of the mark measured by the measurement unit, wherein the control unit determines whether the measurement unit can measure the position of the first mark formed on the resist film, controls the forming unit to form the second mark at a position on the resist film deviated from the position of the first mark when the measurement unit cannot measure the position of the first mark, and controls the exposure process based on the position of the second mark measured by the measurement unit.

Other aspects of the invention will become apparent from the following description of exemplary embodiments with reference to the accompanying drawings.

Drawings

Fig. 1 is a schematic diagram showing the arrangement of an exposure apparatus as one aspect of the present invention.

Fig. 2 is a flowchart for explaining a basic exposure process performed in the exposure apparatus shown in fig. 1.

Fig. 3A to 3D are diagrams for explaining details of steps S203, S204, S205, and S209 in the exposure process shown in fig. 2.

Fig. 4A to 4F are diagrams for explaining exposure processing performed on a rework substrate according to the first embodiment.

Fig. 5 is a diagram showing a marker trace on a rework substrate and an AMF marker formed on the rework substrate.

Fig. 6 is a flowchart for explaining a process performed on a rework substrate according to the second embodiment.

Fig. 7 is a diagram illustrating a concept of an exposure process performed on a rework substrate according to the third embodiment.

Fig. 8 is a flowchart for explaining an exposure process performed on a rework substrate according to the third embodiment.

Detailed Description

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. Note that, in all the drawings, the same reference numerals denote the same members, and a repetitive description thereof will not be given.

< first embodiment >

Fig. 1 is a schematic diagram showing the arrangement of an exposure apparatus 1 as one aspect of the present invention. The exposure apparatus 1 is a photolithography apparatus used in a photolithography process, which is a manufacturing process of an apparatus such as a semiconductor apparatus or a liquid crystal display apparatus. The exposure apparatus 1 performs an exposure process in which a latent image (latent image pattern) is formed on a resist film (photoresist) on a substrate by projecting a mask pattern onto the resist film on the substrate via a projection optical system. As shown in fig. 1, the exposure apparatus 1 includes an illumination optical system 12, a mask stage 14, a projection optical system 15, a substrate stage 17, a mark forming unit 18, a mark measuring unit 19, and a control unit 20.

The illumination optical system 12 illuminates the mask 13 by using light from the light source 11. The mask stage 14 is a stage that can move while holding the mask 13. The projection optical system 15 forms a latent image pattern on a resist film on a substrate by projecting the pattern of the mask 13, which has been irradiated by the illumination optical system 12, onto the substrate. The substrate stage 17 is a stage that can move while holding the substrate 16. The Mark forming unit 18 forms an Alignment Mark (hereinafter referred to as an "Alignment Mark Former" Mark ") on the resist film on the substrate. The mark measurement unit 19 measures the position of each AMF mark by detecting the AMF mark formed on the resist film on the substrate. The control unit 20 is formed of, for example, a computer including a CPU, a memory, and the like, and generally controls each unit of the exposure apparatus 1 according to a program stored in a storage unit.

The basic exposure process performed in the exposure apparatus 1 will be described with reference to fig. 2. Here, a case will be exemplified in which a single layer pattern is formed by performing exposure processing twice (a plurality of times) for a single layer and adding the latent image patterns formed in the respective exposure processing without performing development processing. In this case, the AMF mark is formed on the resist film on the substrate before the first exposure process is performed, and the relative position of the latent image pattern to be formed in each exposure process will be controlled (managed) by using the AMF mark as a reference.

In step S201, the mask 13 is loaded into the exposure apparatus 1. More specifically, a mask transfer device (not shown) takes out the mask 13 stored in the mask storage rack and loads the mask 13 into the exposure apparatus 1 so that the mask stage 14 holds the mask.

In step S202, the substrate 16 is loaded into the exposure apparatus 1. More specifically, a substrate transfer device (not shown) takes out the substrate 16 stored in the cassette (pod) and loads the substrate 16 into the exposure apparatus 1 so that the substrate stage 17 holds the substrate. It is assumed that a resist film has been formed (coated) on the substrate 16.

In step S203, an AMF mark is formed on a resist film on a substrate. More specifically, the substrate stage 17 holding the substrate 16 is moved to the AMF mark forming position (below the mark forming unit 18), and the AMF mark is formed on the resist film on the substrate by the mark forming unit 18.

In step S204, the position of the AMF mark formed in step S203 is measured. More specifically, the substrate stage 17 holding the substrate 16 is moved to the AMF mark measurement position (below the mark measurement unit 19), and the position of the AMF mark formed on the resist film on the substrate is measured by the mark measurement unit 19.

In step S205, a first exposure process is performed on the first layer. More specifically, the substrate stage 17 holding the substrate 16 is moved to a position where the substrate 16 is exposed, that is, a pattern projection position of the mask 13 (below the projection optical system 15), by using the measured AMF mark position measured in step S204 as a reference. Subsequently, an exposure process of forming a latent image pattern is performed by projecting the pattern of the mask 13 onto a target position (partial area) on the resist film on the substrate.

In step S206, the substrate 16 subjected to the first exposure process in step S205 is collected from the substrate stage 17 and held by a substrate conveyance device (not shown). In step S207, the substrate 16 held in the substrate transport apparatus is rotated by 90 °, and the substrate 16 is held by the substrate stage 17 in this state (i.e., in a state where the substrate has been rotated by 90 °).

In step S208, the position of the AMF mark formed in step S203 is measured. More specifically, the substrate stage 17 holding the substrate 16 that has been rotated by 90 ° is moved to the AMF mark measurement position (below the mark measurement unit 19), and the position of the AMF mark formed on the resist film on the substrate is measured by the mark measurement unit 19.

In step S209, a second exposure process is performed on the first layer. More specifically, the substrate stage 17 holding the substrate 16 that has been rotated by 90 ° is moved to the pattern projection position of the mask 13 (below the projection optical system 15) by using the position of the AMF mark measured in step S208 as a reference. Subsequently, an exposure process of forming a latent image pattern is performed by projecting the pattern of the mask 13 onto a target position (a region different from the region subjected to the first exposure process) on the resist film on the substrate.

In step S210, the substrate 16 is unloaded from the exposure apparatus 1. More specifically, a substrate transfer device (not shown) collects the substrate 16 subjected to the first exposure process and the second exposure process from the substrate stage 17, and unloads the substrate from the exposure device 1.

Details of steps S203, S204, S205, and S209 of the exposure process shown in fig. 2 will be described with reference to fig. 3A to 3D. Fig. 3A to 3D show relative positional relationships among the AMF marks 31, 32, and 33 formed on the resist film on the substrate, the mark measuring unit 19, and the measurement range MR of the mark measuring unit 19.

As shown in fig. 3A, before the first exposure process is performed, the mark forming unit 18 forms, for example, three AMF marks 31, 32, and 33 on a resist film on a substrate (step S203). The mark forming unit 18 forms three AMF marks 31, 32, and 33 under the control of the control unit 20 so that these marks will fall within the measurement range MR of the mark measuring unit 19. The mark forming unit 18 removes the resist film on the substrate by using light from a light source different from the light source 11 (i.e., light of a wavelength different from that of the light used to form the latent image pattern), such as a laser beam, for example, to form the AMF marks 31, 32, and 33. However, the mark forming unit 18 may form the AMF marks 31, 32, and 33 by performing exposure to a resist film on the substrate at an excessive dose using light from the light source 11.

Fig. 3B shows a state in which the AMF marks 31 and 32 formed on the resist film on the substrate are detected by the mark measuring unit 19 (step S204). In the present embodiment, each mark measuring unit 19 includes an off-axis range (OAS) for detecting the AMF marks 31, 32, and 33 by using light (non-exposure light) of a wavelength different from that of the light from the light source 11. Since each mark measuring unit 19 uses non-exposure light in this way, it can measure the positions of the AMF marks 31, 32, and 33 without performing exposure on the resist film on the substrate.

Note that although the exposure apparatus 1 includes two mark forming units 18 and two mark measuring units 19, as shown in fig. 1 and 3A to 3D, the number of the mark forming units 18 and the number of the mark measuring units 19 are not limited to specific values. An appropriate number of mark forming units 18 and mark measuring units 19 may be arranged according to the number and positions of AMF marks to be formed on a resist film on a substrate and the time required to measure the positions of the AMF marks.

Fig. 3C shows the substrate 16 in a state after the first exposure process is performed (step S205). As shown in fig. 3C, a latent image pattern (exposure image) LI1 is formed on the resist film on the substrate by projecting the pattern of the mask 13 onto a target position on the resist film on the substrate based on the positions of the AMF marks 31, 32, and 33 measured by the mark measuring unit 19. The substrate 16 subjected to the first exposure process is collected from the substrate stage 17. At this time, the control unit 20 will obtain the relative positional relationship between the AMF marks 31, 32, and 33 and the latent image pattern LI 1.

Fig. 3D shows the substrate 16 in a state after the second exposure process is performed (step S209). The substrate 16 subjected to the first exposure treatment and collected from the substrate stage 17 is, for example, rotated by 90 ° by the substrate conveyance device and held in this state by the substrate stage 17. Although the exposure apparatus 1 that has performed the first exposure process will perform the second exposure process in the present embodiment, the second exposure process may be performed in another exposure apparatus different from the exposure apparatus 1.

After the substrate 16 subjected to the first exposure process is held by the substrate stage 17, the positions of the AMF marks 31, 32, and 33 are measured by the mark measuring unit 19. Subsequently, a target position at which the latent image pattern LI2 is to be formed on the resist film on the substrate in the second exposure process is determined based on the positions of the AMF marks 31, 32, and 33 and the relative positional relationship between the AMF marks 31, 32, and 33 and the latent image pattern LI 1. By projecting the pattern of the mask 13 onto the determined target position, a latent image pattern LI2 is formed on the resist film on the substrate.

In this way, in the case where the exposure process is performed on a single layer a plurality of times, the relative positional relationship between AMF marks 31 to 33 and latent image pattern LI1, and the relative positional relationship between AMF marks 31 to 33 and latent image pattern LI2 will be managed.

In the exposure apparatus 1, in some cases, an abnormality may occur in a resist film on a substrate or in an exposure condition (exposure state) at the time of exposure processing. In this case, in order to prevent generation of defects in the apparatus to be manufactured from the substrate 16, a process of removing a resist film (first resist film) that has been formed on the substrate 16 and forming (regenerating) a new resist film (second resist film) on the substrate will be performed. The substrate 16 on which the resist film has been regenerated in this manner is referred to as a "rework substrate" and is used again. The substrate 16 having the regenerated resist film will be referred to as a rework substrate 16A hereinafter.

A rework substrate and an exposure process performed on the rework substrate according to the present embodiment will be described with reference to fig. 4A to 4F. As shown in fig. 4A, three AMF marks 31, 32, and 33 are formed on a resist film on a substrate by the mark forming unit 18 before an exposure process is performed on the substrate 16. As shown in fig. 4B, a latent image pattern LI1 is formed by projecting the pattern of the mask 13 onto a target position on the resist film on the substrate based on the positions of the AMF marks 31, 32, and 33 measured by the mark measuring unit 19. Note that in order to form the latent image pattern LI1 at the target position on the resist film on the substrate, various correction amounts need to be obtained. The correction amount includes, for example, a correction amount of the layout of the projection region (shot region) on the substrate, which can be obtained from the shift amount from the design value of the positions of the AMF marks 31, 32, and 33 measured by the mark measurement unit 19, and a driving correction amount of the substrate stage 17.

If an abnormality occurs in the resist film on the substrate or in the exposure conditions in the exposure process shown in fig. 4B here, the resist film on the substrate is removed as described above. Therefore, although the latent image pattern LI1 will be removed together with the resist film, the traces of the respective AMF marks 31, 32, and 33, i.e., the mark traces 31', 32 ', and 33', will remain on the substrate, as shown in fig. 4C. This is because even if there are no defects on the substrate, the properties of the surface of the substrate 16 may have changed due to the formation of the AMF marks 31, 32 and 33. If a new AMF mark is formed on the substrate 16 overlapping the mark traces 31', 32 ', and 33', the detection accuracy of the new AMF mark may be degraded and the new AMF mark may become undetectable due to a change in the properties of the surface of the substrate 16.

Therefore, in the present embodiment, as shown in fig. 4D, when the AMF marks are to be formed on the rework substrate 16A (more specifically, on the resist film on the rework substrate), AMF marks 41, 42, and 43 are formed at positions deviated from the mark traces 31', 32 ', and 33 '. In other words, the mark forming unit 18 will perform the forming process of forming the AMF marks 41 to 43 so that the AMF marks 41 to 43 (second marks) will be located at positions on the rework substrate 16A that are offset from the positions of the mark traces 31 'to 33' (first marks). In this case, it is preferable that the AMF marks 41 to 43 be formed such that the positions of the AMF marks 41 to 43 on the rework substrate 16A do not overlap the mark traces 31', 32 ', and 33 '. This can suppress (prevent) a state in which the detection accuracy of the new AMF marks 41, 42, and 43 is lowered or a state in which the new AMF marks 41, 42, and 43 become undetectable. In addition, it is preferable that the AMF marks 41, 42, and 43 be formed such that the mark traces 31', 32 ', and 33' will be out of the measurement range of the AMF marks 41, 42, and 43 when the positions of the AMF marks 41, 42, and 43 are to be measured by the mark measurement unit 19. This can suppress (prevent) the mark measuring unit 19 from erroneously detecting the mark traces 31', 32 ', and 33 '.

After the AMF marks 41 to 43 are formed on the resist film on the rework substrate, the pattern of the mask 13 is projected onto a target position on the resist film on the rework substrate based on the positions of the AMF marks 41 to 43 measured by the mark measuring unit 19, as shown in fig. 4E. As a result, a latent image pattern LI3 was formed on the resist film on the rework substrate.

The rework substrate 16A on which the latent image pattern LI3 has been formed is rotated by 90 ° by, for example, a substrate conveyance device (not shown) and is held by the substrate stage 17 in this state. Subsequently, as shown in fig. 4F, the pattern of the mask 13 is projected onto a target position on the resist film on the rework substrate based on the positions of the AMF marks 41 to 43 measured by the mark measurement unit 19. As a result, a latent image pattern LI4 was formed on the resist film on the rework substrate.

Although the exposure process for forming the latent image pattern LI3 and the latent image pattern LI4 is performed in the exposure device 1 (the same exposure device) in the present embodiment, the present invention is not limited thereto. For example, the exposure process for forming the latent image pattern LI3 and the exposure process for forming the latent image pattern LI4 may be performed in different exposure devices.

Further, in the present embodiment, the mark forming unit 18 forms three AMF marks 41 to 43 on the resist film on the rework substrate. This is done in order to obtain the positions in the rotational direction from the positions of the AMF marks 41 to 43 in addition to the positions in the translational direction of the rework substrate 16A. Therefore, it is preferable that at least three AMF marks are formed on the resist film on the rework substrate.

In addition, from the viewpoint of the measurement accuracy of the positions of the AMF marks, it is preferable that the distances between at least three AMF marks to be formed on the resist film on the rework substrate are made longer than a predetermined distance. It is also preferable that the number of AMF marks to be formed on the resist film on the substrate to be reworked is the same as the number of AMF marks to be formed on the resist film on the substrate before the rework. Further, it is preferable that the relative distance between the plurality of AMF marks to be formed on the resist film on the substrate to be reworked is equal to the relative distance between the plurality of AMF marks formed on the resist film on the substrate before the rework.

< second embodiment >

As shown in fig. 5, the traces of AMF marks 31, 32, and 33, i.e., mark traces 31', 32 ', and 33', respectively, remain on rework substrate 16A. The marker traces 31', 32 ' and 33' are likely to be detected by the marker measuring unit 19. In other words, there may be a case where the positions of the mark traces 31', 32 ', and 33' are measured by the mark measuring unit 19. Therefore, in the present embodiment, whether to form the new AMF marks 41, 42, and 43 will be determined according to whether the mark measuring unit 19 can measure the positions of the mark traces 31', 32 ', and 33' remaining on the rework substrate 16A.

As shown in fig. 6, in step S601, the mark measuring unit 19 measures the positions of the mark traces 31', 32 ', and 33' remaining on the rework substrate 16A. In step S602, based on the measurement result obtained in step S601, it is determined whether the mark measuring unit 19 can measure the positions of the mark traces 31', 32 ', and 33 '.

If the mark measuring unit 19 can measure the positions of the mark traces 31', 32 ', and 33', the process proceeds to step S603. In step S603, an exposure process is performed to form a latent image pattern by projecting the pattern of the mask 13 onto a target position on the resist film on the rework substrate based on the positions of the mark traces 31', 32 ', and 33' measured in step S601.

On the other hand, if the marker measuring unit 19 cannot measure the positions of the marker traces 31', 32 ', and 33', the process proceeds to step S604. In step S604, AMF marks 41, 42, and 43 are formed at positions deviated from the mark traces 31', 32 ', and 33 '. More specifically, as described above, the mark forming unit 18 performs the forming process of forming the AMF marks 41 to 43 so that the AMF marks 41 to 43 will be located at positions on the rework substrate 16A that are offset from the positions of the mark traces 31 'to 33'.

In step S605, the mark measuring unit 19 measures the positions of the AMF marks 41, 42, and 43 formed on the resist film on the rework substrate in step S604. In step S606, an exposure process is performed to form a latent image pattern by projecting the pattern of the mask 13 onto a target position of the resist film on the rework substrate based on the positions of the AMF marks 41, 42, and 43 measured in step S605.

Although it is assumed in the present embodiment that the mark measuring unit 19 will be able to measure the position of a new AMF mark, i.e., a second AMF mark formed on a resist film on a rework substrate, there may be a case where the position of the second AMF mark cannot be measured. In this case, it may be determined whether the position of the second AMF mark can be measured, and a new AMF mark (third AMF mark) may be formed in case the position of the second AMF mark cannot be measured. In other words, after determining whether the position of the (N-1) th AMF mark can be measured, in case that the position of the (N-1) th AMF mark cannot be measured, the Nth AMF mark can be formed.

Embodiments are not limited to reworking substrate 16A. The present embodiment is applicable to a case where the AMF mark cannot be measured even if the rework substrate 16A is not used. For example, it is determined whether the mark measuring unit 19 can measure the position of the AMF mark (first mark) formed on the resist film on the substrate 16. If the mark measuring unit 19 cannot measure the position of the AMF mark formed on the resist film on the substrate 16, a new AMF mark (second mark) will be formed on the resist film on the substrate 16 at a position deviated from the position of the AMF mark. Subsequently, an exposure process is performed to form a latent image pattern by projecting the pattern of the mask 13 onto a target position on the resist film on the substrate 16 based on the position of the new AMF mark measured by the mark measuring unit 19.

< third embodiment >

As shown in fig. 7, the present embodiment will describe a case where the exposure apparatus 1 performs a first exposure process on a rework substrate 16A, and the exposure apparatus 1A different from the exposure apparatus 1 performs a second exposure process on the rework substrate. The exposure apparatus 1A here has the same arrangement and function as the exposure apparatus 1.

Fig. 8 is a flowchart for explaining the exposure process for the rework substrate according to the present embodiment. In step S801, the rework substrate 16A is loaded into the exposure apparatus 1. More specifically, the rework substrate 16A is loaded into the exposure apparatus 1 by the substrate transport apparatus, and the rework substrate 16A is held by the substrate stage 17. At this time, the exposure apparatus 1 obtains positional information on the positions of the AMF marks 31 to 33 (mark traces 31', 32 ', and 33 ') formed on the resist film of the substrate 16 before rework from a device (another device different from the exposure apparatus 1) that forms the AMF marks 31 to 33.

In step S802, in the exposure apparatus 1, AMF marks 41, 42, and 43 are formed at positions deviated from the mark traces 31', 32 ', and 33' remaining on the rework substrate 16A. More specifically, the forming process is performed based on the position information obtained in step S801 to form the AMF marks 41 to 43 such that the AMF marks 41 to 43 will be located at positions on the rework substrate 16A that are offset from the positions of the mark traces 31 'to 33'.

In step S803, in the exposure apparatus 1, the positions of the AMF marks 41, 42, and 43 formed on the resist film on the rework substrate formed in step S802 are measured. In step S804, in the exposure apparatus 1, the first exposure process is performed on the rework substrate 16A. More specifically, an exposure process is performed to form a latent image pattern by projecting the pattern of the mask 13 onto a target position on the resist film on the rework substrate based on the positions of the AMF marks 41, 42, and 43 measured in step S803.

In step S805, the rework substrate 16A is unloaded from the exposure apparatus 1. More specifically, the rework substrate 16A subjected to the first exposure process is collected from the substrate stage 17 and unloaded from the exposure apparatus 1 by the substrate conveyance device. In step S806, the rework substrate 16A held by the substrate transport apparatus is rotated by 90 °.

In step S807, the rework substrate 16A is loaded into the exposure apparatus 1A. More specifically, the rework substrate 16A that has been rotated by 90 ° is loaded into the exposure apparatus 1A by the substrate transport apparatus in this state. At this time, the exposure apparatus 1A obtains positional information about the positions of the AMF marks 41 to 43 formed on the resist film on the rework substrate 16A from the exposure apparatus 1.

In step S808, in the exposure apparatus 1A, the positions of the AMF marks 41, 42, and 43 formed on the resist film on the rework substrate in step S802 are measured. In step S809, in the exposure apparatus 1A, the second exposure process is performed on the rework substrate 16A. More specifically, an exposure process is performed to form a latent image pattern by projecting the pattern of the mask 13 onto a target position on the resist film on the rework substrate based on the positions of the AMF marks 41, 42, and 43 measured in step S808.

In step S810, the rework substrate 16A is unloaded from the exposure apparatus 1A. More specifically, the rework substrate 16A subjected to the first exposure process and the second exposure process is unloaded from the exposure apparatus 1A by the substrate conveyance device.

< fourth embodiment >

The method of manufacturing an article according to an embodiment of the present invention is suitable for manufacturing an article such as a device (semiconductor element, magnetic storage medium, liquid crystal display element, or the like). A method of manufacturing an article comprising: a step of performing exposure on the substrate having been coated with the photoresist by using the exposure apparatus 1 or the exposure apparatus 1 and the exposure apparatus 1A, and a step of developing the exposed substrate. In addition, the fabrication method may include other well-known steps (e.g., oxidation, deposition, vapor deposition, doping, planarization, etching, resist removal, dicing, bonding, and packaging, etc.). The method of manufacturing an article according to the embodiment is superior to the conventional method in at least one of performance, quality, productivity, and production cost of the article.

< other examples >

The embodiment(s) of the present invention may also be implemented by: a computer of a system or apparatus that reads and executes computer-executable instructions (e.g., one or more programs) recorded on a storage medium (which may also be referred to more fully as a "non-transitory computer-readable storage medium") to perform the functions of one or more of the above-described embodiment(s), and/or that includes one or more circuits (e.g., an Application Specific Integrated Circuit (ASIC)) for performing the functions of one or more of the above-described embodiment(s); and computer-implemented methods by the system or apparatus, such as reading and executing computer-executable instructions from a storage medium to perform the functions of one or more of the above-described embodiment(s) and/or controlling the one or more circuits to perform the functions of one or more of the above-described embodiment(s). The computer may include one or more processors (e.g., a Central Processing Unit (CPU), Micro Processing Unit (MPU)) and may include a separate computer or a network of separate processors to read out and execute the computer-executable instructions. The computer-executable instructions may be provided to the computer, for example, from a network or a storage medium. For example, the storage medium may include one or more of the following: a hard disk, Random Access Memory (RAM), Read Only Memory (ROM), memory for a distributed computing system, an optical disk (e.g., a Compact Disk (CD), a Digital Versatile Disk (DVD), or a Blu-ray disk (BD) TM), flash memory devices, memory cards, and the like.

The embodiments of the present invention can also be realized by a method in which software (programs) that perform the functions of the above-described embodiments are supplied to a system or an apparatus through a network or various storage media, and a computer or a Central Processing Unit (CPU), a Micro Processing Unit (MPU) of the system or the apparatus reads out and executes the methods of the programs.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.

Claims

1. An exposure apparatus, comprising:

a forming unit configured to form a mark on a resist film on a substrate;

wherein the forming unit forms the second mark on the second resist film on the rework substrate from which the first resist film on which the first mark is formed has been removed and the second resist film has been formed, so that the second mark will be located at a position on the rework substrate that is offset from a position of the first mark.

2. The apparatus according to claim 1, wherein the forming unit forms at least three second marks on the second resist film.

3. The apparatus according to claim 2, wherein the forming unit forms the at least three second marks such that a distance between the at least three second marks to be formed on the second resist film will be longer than a predetermined distance.

4. The apparatus according to claim 1, wherein the forming unit forms a number of the plurality of second marks on the second resist film equal to a number of the plurality of first marks formed on the first resist film.

5. The apparatus according to claim 4, wherein the forming unit forms the plurality of second marks such that a relative distance between the plurality of second marks to be formed on the second resist film is equal to a relative distance between the plurality of first marks formed on the first resist film.

6. The apparatus according to claim 1, wherein the forming unit forms the second mark on the second resist film such that a position of the second mark does not overlap a position of the first mark on the rework substrate.

7. The apparatus of claim 1, further comprising a measurement unit configured to measure a position of a mark formed by the forming unit,

wherein the forming unit forms the second mark on the second resist film such that a position of the first mark formed on the first resist film falls outside a measurement range of the measuring unit when a position of the second mark is to be measured by the measuring unit.

8. The apparatus according to claim 1, wherein the forming unit forms the second mark on the second resist film by using light having a wavelength different from a wavelength of light used in an exposure process of forming a latent image by projecting a pattern onto the resist film on the substrate.

9. The apparatus according to claim 1, wherein the first mark is formed on the first resist film by the forming unit.

10. The apparatus according to claim 1, further comprising a control unit configured to perform an exposure process of forming a latent image by projecting a pattern onto a target position on a resist film on a substrate,

wherein the first mark is formed by a device different from the exposure device, and

the control unit obtains positional information about a position of a first mark formed on the first resist film from another device, and

the forming unit forms a second mark on the second resist film based on the positional information.

11. A method of manufacturing an article by using an exposure apparatus, comprising:

exposing the substrate by using an exposure device;

developing the exposed substrate; and

an article is manufactured from the developed substrate,

wherein the exposure apparatus includes: a forming unit configured to form a mark on a resist film on a substrate,