CN114488371A - Wide-spectrum low-transmittance and low-reflectivity reflector - Google Patents
Wide-spectrum low-transmittance and low-reflectivity reflector Download PDFInfo
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- 238000002310 reflectometry Methods 0.000 title claims abstract description 65
- 238000001228 spectrum Methods 0.000 title claims abstract description 40
- 238000002834 transmittance Methods 0.000 title claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 230000001105 regulatory effect Effects 0.000 claims abstract description 30
- 239000011651 chromium Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 239000004332 silver Substances 0.000 claims abstract description 10
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052737 gold Inorganic materials 0.000 claims abstract description 9
- 239000010931 gold Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 20
- 230000003595 spectral effect Effects 0.000 claims description 19
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 17
- 238000001704 evaporation Methods 0.000 claims description 15
- 230000008020 evaporation Effects 0.000 claims description 15
- 238000005566 electron beam evaporation Methods 0.000 claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 238000002207 thermal evaporation Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 125000006850 spacer group Chemical group 0.000 claims description 5
- DEIVNMVWRDMSMJ-UHFFFAOYSA-N hydrogen peroxide;oxotitanium Chemical compound OO.[Ti]=O DEIVNMVWRDMSMJ-UHFFFAOYSA-N 0.000 claims description 4
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 4
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 4
- 230000035515 penetration Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000002241 glass-ceramic Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 118
- 239000000463 material Substances 0.000 description 19
- 238000007747 plating Methods 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 7
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- 238000000411 transmission spectrum Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0808—Mirrors having a single reflecting layer
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
The invention discloses a wide-spectrum low-transmittance and low-reflectivity reflector, which comprises a reflector substrate, and a metal main reflecting layer, a spacing layer, a reflectivity regulating layer and a spectrum flatness regulating layer which are sequentially attached to the reflector substrate; wherein the metal main reflecting layer is aluminum, silver, gold or chromium, and the spacing layer is Al2O3The reflectivity of the reflecting mirror for incident light with the wavelength of 450-900 nm is between 30% and 80%, and the transmittance is less than 0.1%.
Description
Technical Field
The invention belongs to the field of optical instruments, and relates to a wide-spectrum low-transmittance low-reflectivity reflector applicable to optical analysis instruments and optical detectors.
Background
The reflector is a key component of an optical system, is widely applied to the fields of analytical test instruments, remote sensing cameras and the like, and is applied as shown in fig. 1. The reflecting mirrors are divided into two types of media and metal bases, the reflecting spectrum bandwidth of the dielectric reflecting mirror is widened by increasing the number of film layers, but the difficulty of the film layer preparation process is increased, and for occasions with the film layer quality meeting requirements, the broadband reflecting mirror is generally metal silver, aluminum or gold, namely a metal base reflecting mirror. FIG. 2 shows the reflection spectrum of a conventional reflector with a single metal film layer and a dielectric protective layer, wherein the average reflectivity of 400-1200 nm is 98%, and the transmittance is less than 0.1%. Due to the mature preparation process and the spectrum advantages of the metal-based reflector, the application field of the reflector is very wide.
Because the reflectivity of metal is high, the average reflectivity of the traditional metal (silver, aluminum or gold) + dielectric reflector in visible near infrared is larger than 95%, the requirement of a special detector for low reflectivity of the reflector between 30% and 80% cannot be met, and if the transmissivity is too high, the stray light of the system is increased, and the imaging quality of the system is influenced.
Disclosure of Invention
The invention aims to overcome the defects and provide a wide-spectrum low-transmittance and low-reflectivity reflector, which comprises a reflector substrate, and a metal main reflecting layer, a spacing layer, a reflectivity regulating layer and a spectrum flatness which are sequentially attached to the reflector substrateA control layer; wherein the metal main reflecting layer is aluminum, silver, gold or chromium, and the spacing layer is Al2O3The reflectivity of the reflecting mirror for incident light with the wavelength of 450nm-900nm is adjustable between 30% and 80%, and the transmittance is less than 0.1%.
In order to achieve the above purpose, the invention provides the following technical scheme:
a wide-spectrum low-transmittance and low-reflectivity reflector comprises a reflector substrate, and a metal main reflecting layer, a spacing layer, a reflectivity regulating layer and a spectrum flatness regulating layer which are sequentially attached to the reflector substrate;
the metal main reflecting layer is aluminum, silver, gold or chromium;
the spacing layer is Al2O3；
The reflectivity regulating layer is chromium, and the thickness of the reflectivity regulating layer is 0nm-80 nm;
the spectrum flatness control layer comprises low refractive index layers and high refractive index layers which are alternately arranged; the refractive index of the low refractive index layer is 1.40-1.47, and the refractive index of the high refractive index layer is 1.9-2.4.
Further, the thickness of the spacing layer is 8nm-30 nm;
the thickness of the reflectivity regulation layer is 0nm-80 nm.
Further, in the spectral flatness control layer, the low refractive index layer is made of silicon dioxide, and the high refractive index layer is made of one or more of titanium dioxide, tantalum pentoxide, trititanium pentoxide, titanium trioxide or niobium pentoxide.
Further, the spectral flatness control layer comprises more than or equal to 1 low-refractive-index layer and more than or equal to 1 high-refractive-index layer; the low refractive index layer is directly attached to the reflectivity control layer.
Further, the thickness of the low refractive index layer is 10nm to 100nm, and the thickness of the high refractive index layer is 9nm to 90 nm.
Further, the thickness of the metal main reflecting layer is larger than the penetration depth of the metal used for the metal main reflecting layer.
Furthermore, the reflectivity of the reflecting mirror to incident light with the wavelength of 450nm-900nm is between 30% and 80%, and the transmittance is less than 0.1%.
Further, the reflector substrate is K9 glass, ULE glass, microcrystalline glass, silicon carbide or modified silicon carbide;
the modified silicon carbide is silicon carbide with a layer of silicon with the diameter of at least 10 microns deposited on the surface and polished.
Furthermore, the metal main reflecting layer is plated by adopting a thermal evaporation method, the spacing layer is plated by adopting an electron beam evaporation method, the reflectivity regulating layer is plated by adopting a thermal evaporation method, and the spectral flatness regulating layer is plated by adopting an electron beam evaporation method.
Further, when the metal main reflecting layer and the reflectivity regulating layer are plated by a thermal evaporation method, the evaporation rate is 0.5-1 nm/s; when the spacing layer is plated by adopting an electron beam evaporation method, the evaporation rate is 1.0-1.5 nm/s; when the low refractive index layer in the spectral flatness control layer is plated by adopting an electron beam evaporation method, the evaporation rate is 2-4nm/s, and when the high refractive index layer in the spectral flatness control layer is plated by adopting the electron beam evaporation method, the evaporation rate is 1-2 nm/s.
Compared with the prior art, the invention has at least one of the following beneficial effects:
(1) the film structure model in the wide-spectrum low-transmittance and low-reflectance reflector is simple, the effect of each part is definite, the process is good in realizability, the limitation of the type of the reflector substrate material is avoided, and the defect that the traditional reflector cannot realize low reflectance and low transmittance at the same time is overcome;
(2) according to the reflector of the wide-spectrum low-transmittance low-reflectivity reflector, the metal chromium with a large absorption coefficient is used as the reflectivity regulating layer, and the absorption can be controlled by regulating the thickness of the reflectivity regulating layer, so that the reflectivity of a film system is effectively controlled;
(3) the invention adopts Al2O3The spacer layer is used as the spacer layer between the metal main reflecting layer and the reflectivity regulating layer, the main reflecting layer and the reflectivity regulating layer are effectively separated by the spacer layer, the film thickness of the main reflecting layer and the reflectivity regulating layer can be independently regulated, and the film system design is facilitated; meanwhile, the firmness and the engineering realizability of the film layer are considered;
(4) in the spectrum flatness regulating layer, the flatness of the spectrum can be effectively regulated and controlled by regulating the number and the thickness of the low-refractive-index material and the high-refractive-index material;
(5) the reflectivity of the reflector of the invention to incident light with the wavelength of 450nm-900nm is between 30-80%, the transmittance is less than 0.1%, and on the basis of meeting the low transmittance and low reflectivity of a wide spectrum, the transmittance and the reflectivity of the reflector can be flexibly adjusted according to actual requirements, thereby greatly improving the application range of the reflector.
Drawings
FIG. 1 is a schematic representation of the use of a typical prior art mirror;
FIG. 2 is a reflection spectrum of a conventional reflector with a conventional metal + dielectric protective layer according to the prior art;
FIG. 3 is a film structure model of a broad-spectrum low-transmittance low-reflectance reflector of the present invention;
FIG. 4 is a schematic diagram of a film structure of a wide-band low-transmittance and low-reflectance reflector according to the present invention;
FIG. 5 shows the reflection spectrum of a mirror obtained in example 1 of the present invention;
FIG. 6 is a transmission spectrum of a mirror obtained in example 1 of the present invention;
FIG. 7 is a reflectance spectrum of example 2 of the present invention;
FIG. 8 is a transmission spectrum of example 2 of the present invention;
FIG. 9 is a reflectance spectrum of example 3 of the present invention;
FIG. 10 is a transmission spectrum of example 3 of the present invention.
Detailed Description
The features and advantages of the present invention will become more apparent and apparent from the following detailed description of the invention.
The word "exemplary" is used exclusively herein to mean "serving as an example, embodiment, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. While the various aspects of the embodiments are presented in drawings, the drawings are not necessarily drawn to scale unless specifically indicated.
The invention overcomes the defect of insufficient spectrum regulation and control capability of a high-reflectivity reflector taking traditional metal silver as an example, and provides a reflecting film system structure with wide spectrum, low transmittance and low reflectivity; the defects that the traditional reflector cannot realize wide spectrum, low reflectivity and low transmittance at the same time are overcome. The invention relates to a reflector with adjustable average reflectivity between 30% and 80% and transmittance less than 0.1% in a wide spectral range of 450nm to 900nm, which is obtained based on a metal main reflecting layer, a spacing layer, a reflectivity size regulating layer and a spectral flatness regulating layer. The invention utilizes the bimetal structure, respectively utilizes the reflection and absorption characteristics of metal to realize the low transmission and reflectivity control of the reflector, and optimizes and adjusts the medium SiO2、TiO2The thickness and the number of layers of the film layers are equal to realize the control of the flatness of the wide-spectrum reflection spectrum, and the coating of the low-reflectivity reflector product on the substrate such as microcrystal, ULE or modified silicon carbide can be realized.
The invention relates to a wide-spectrum low-transmittance and low-reflectivity reflector, which comprises a substrate (K9, ULE, microcrystal, silicon carbide or modified silicon carbide), a metal main reflecting layer, a spacing layer, a reflectivity regulating layer and a spectrum flatness regulating layer, wherein a film structure model is shown in figure 3. According to the broad spectrum and the size of the reflectivity, the metal main reflecting layer material can be metal aluminum, silver, gold and chromium, the thickness of the main reflecting layer film is required to be larger than the penetration depth of the metal, so that the transmittance is low when light enters, the complex refractive index of the metal main reflecting layer material is n-ik, and the reflectivity can be calculated by the following formula:
metal aluminum, silver, gold inExtinction coefficient k is greater than refractive index n and reflectivity R in visible spectrum range0Approaching to 1; the reflectance of metallic chromium is about 0.5. The actual complex refractive index of the metal material can be measured by plating a single metal film with a certain thickness and using an ellipsometer.
The spectral flatness control layer comprises low-refractive-index material silicon dioxide, and high-refractive-index material titanium dioxide, tantalum pentoxide, trititanium pentoxide, titanium trioxide or niobium pentoxide.
The spacing layer effectively separates the main reflecting layer from the reflectivity regulating layer, so that the film thicknesses of the metal main reflecting layer and the reflectivity regulating layer can be independently regulated, and the film system design is facilitated; al (Al)2O3Has good adhesion with metal, and is selected from Al2O3As the spacing layer, the design requirement of the film system is met, the firmness of the film layer is increased, and the product quality is ensured.
The absorption of metal Cr is used as a regulation layer of the reflectivity of the whole film system, the reflectivity of the film system can be effectively controlled, the absorption coefficient of Cr is alpha, the thickness is d, and the light intensity I is0The intensity of light I after passing through the reflectivity control layer is calculated by the following formula:
I＝I0e-αd (2)
absorption amount delta I of the reflectivity control layer0And I, regulating the thickness of the Cr layer can control absorption, thereby playing a role in controlling the reflectivity of the whole film system.
In order to make the reflection spectrum flat between 450nm and 900nm, a spectrum flatness control layer is used for controlling, and the thickness of the film layer is determined by an optimization algorithm.
Specifically, the first metal main reflecting layer (taking the layer close to the reflector substrate as the first layer) of the film layer structure attached to the reflector substrate is metal silver, aluminum, gold or chromium, and the film layer thickness is between 100nm and 200 nm; the second layer is spacer layer aluminum oxide with the thickness of 8nm-30 nm; the third layer is a reflectivity control layer of chromium metal with a thickness of 10nm-80 nm; the dielectric layer from the fourth layer is a spectral flatness control layer and comprises a low refractive index material (L) and a high refractive index material (H); the low refractive index material is silicon dioxide, and the high refractive index material can be titanium dioxide, tantalum pentoxide, titanium trioxide or niobium pentoxide film material. The arrangement sequence of the spectral flatness control layers is LHLH … LH, and the number of film layers and the thickness of the film layers can be changed correspondingly along with the difference of the reflectivity values. When the reflectivity is increased, the thickness of the metal chromium of the reflectivity adjusting layer is increased, the number of layers of low-refractive-index materials and high-refractive-index materials in the spectral flatness adjusting layer is increased, and the film structure is shown in figure 4.
The invention can take the actually required low-reflectivity numerical value as the optimization target under the condition of keeping the arrangement sequence of the film layers unchanged, and utilizes commercial film design software Maceold and the like to optimize the thickness of the film layers.
Example 1:
the invention utilizes common film materials to realize low reflection and transmission in a wide spectral range of 450nm-900nm, the average reflectivity of the reflector prepared by the embodiment is about 60 percent in a spectral range of 450nm-900nm, and the transmittance is less than 0.1 percent. The specific implementation method comprises the following steps:
the material can be selected according to actual conditions. In this embodiment:
the reflector substrate is K9 glass, and the film system structure on the reflector substrate is Cr/Al2O3/Cr/SiO2/TiO2(air side), wherein the thickness of each layer is: 150nm, 22.9nm, 10nm, 85.4nm and 65.2 nm.
The refractive index n of the incident medium is 1.0, and when the incident angle is 10 degrees, the reflection spectrum and the projection spectrum in the wavelength range of 450nm to 900nm are shown in fig. 5 and fig. 6, the average reflectivity of the mirror prepared by the embodiment is about 60%, and the transmittance is less than 0.1%.
The preparation method of the reflector of the embodiment is as follows:
(1) plating by electron beam evaporation and ion-assisted plating, and vacuumizing the coater to 8 × 10-4Pa, starting film layer plating;
(2) adjusting the evaporation-resistant current to make the evaporation rate 0.5-1.0nm/s by using a thermal evaporation method, and plating a first layer of metal Cr with the thickness of 150 nm;
(3) adjusting the filament current of the electron gun by electron beam evaporation to make the evaporation rate be 1.0-1.5nm/s and plating a second layer of 22.9nm Al2O3；
(4) Adjusting the evaporation-resistant current to ensure that the evaporation rate is 0.5-1nm/s by using a thermal evaporation method, and plating metal Cr with the thickness of a third layer being 10 nm;
(5) starting an ion source, setting the anode voltage of the ion source to be 250V and the current to be 5A;
(6) pressure was set to 1.2X 10-2Pa, plating SiO with the fourth layer thickness of 85.4nm by using an electron beam evaporation method2The evaporation rate is 2-4 nm/s;
(7) pressure was set to 1.5X 10-2Pa, plating a fifth layer of TiO with the thickness of 65.2nm by an electron beam evaporation method2The evaporation rate is 1-2 nm/s;
(8) naturally cooling to below 30 ℃, taking out the sample, and carrying out spectrum test.
Example 2:
the invention utilizes common film materials to realize low reflection and transmission in a wide spectral range of 450nm-900nm, the average reflectivity of the reflector prepared by the embodiment is about 80% in a spectral range of 450nm-900nm, and the transmittance is less than 0.1%. The specific implementation method comprises the following steps:
the material can be selected according to actual conditions. In this embodiment:
the substrate of the reflector is microcrystalline glass, and the film system structure on the substrate of the reflector is Al/Al2O3/Cr/SiO2/TiO2/SiO2(air side), wherein the thickness of each layer is: 180nm, 10nm, 11.5nm, 59nm, 71nm and 15 nm.
The refractive index n of the incident medium is 1.0, and when the incident angle is 20 degrees, the reflection spectrum and the projection spectrum in the wavelength range of 450nm to 900nm are shown in fig. 7 and 8, and the average reflectivity of the prepared reflector is about 80% and the transmittance is less than 0.1%.
Example 3:
the average reflectivity of the reflector prepared by the embodiment is about 40% in a spectrum band of 450nm-900nm, and the transmittance is less than 0.1%. The specific implementation method comprises the following steps:
the material can be selected according to actual conditions. In this embodiment:
the reflector substrate is made of modified silicon carbide, and the film system structure on the reflector substrate is Ag/Al2O3/Cr/SiO2/TiO2/SiO2/TiO2(air side), wherein the thickness of each layer is: 180nm, 11.5nm, 14.5nm, 14nm, 43.9nm, 47nm and 11.9 nm.
The refractive index n of the incident medium is 1.0, and when the incident angle is 30 degrees, the reflection spectrum and the projection spectrum in the wavelength range of 450nm to 900nm are shown in fig. 9 and fig. 10, and the average reflectivity of the prepared reflector is about 40% and the transmittance is less than 0.1%.
The invention has been described in detail with reference to specific embodiments and illustrative examples, but the description is not intended to be construed in a limiting sense. Those skilled in the art will appreciate that various equivalent substitutions, modifications or improvements may be made to the technical solution of the present invention and its embodiments without departing from the spirit and scope of the present invention, which fall within the scope of the present invention. The scope of the invention is defined by the appended claims.
Those skilled in the art will appreciate that those matters not described in detail in the present specification are well known in the art.
Claims (10)
1. A wide-spectrum low-transmittance and low-reflectance reflector is characterized by comprising a reflector substrate, and a metal main reflecting layer, a spacing layer, a reflectance control layer and a spectrum flatness control layer which are sequentially attached to the reflector substrate;
the metal main reflecting layer is aluminum, silver, gold or chromium;
the spacing layer is Al2O3；
The reflectivity regulating layer is chromium, and the thickness of the reflectivity regulating layer is 0nm-80 nm;
the spectrum flatness control layer comprises low refractive index layers and high refractive index layers which are alternately arranged; the refractive index of the low refractive index layer is 1.40-1.47, and the refractive index of the high refractive index layer is 1.9-2.4.
2. The wide-band low-transmittance, low-reflectance reflector according to claim 1, wherein the metal primary reflective layer has a thickness of 100nm to 200 nm;
the thickness of the spacing layer is 8nm-30 nm.
3. The mirror of claim 1, wherein the low refractive index layer is made of silica, and the high refractive index layer is made of one or more of titania, tantalum pentoxide, trititanium pentoxide, titanium trioxide, or niobium pentoxide.
4. The wide-band low-transmittance and low-reflectance reflector according to claim 1, wherein the spectral flatness control layer comprises 1 or more low-refractive-index layers and 1 or more high-refractive-index layers; the low refractive index layer is directly attached to the reflectivity control layer.
5. The wide band, low transmittance, low reflectance reflector according to claim 1, wherein the low refractive index layer has a thickness of 10nm to 100nm and the high refractive index layer has a thickness of 9nm to 90 nm.
6. The mirror of claim 1, wherein the thickness of the primary metallic reflective layer is greater than the penetration depth of the metal used in the primary metallic reflective layer.
7. The wide-band low-transmittance and low-reflectance reflector according to claim 1, wherein the reflectance of the reflector for incident light with a wavelength of 450nm to 900nm is 30% to 80%, and the transmittance is less than 0.1%.
8. The wide band low transmittance, low reflectance reflector according to claim 1, wherein the reflector substrate is K9 glass, ULE glass, glass-ceramic, silicon carbide or modified silicon carbide;
the modified silicon carbide is silicon carbide with a layer of silicon with the diameter of at least 10 microns deposited on the surface and polished.
9. The wide band low transmittance, low reflectance reflector according to claim 1, wherein the metal primary reflective layer is deposited by thermal evaporation, the spacer layer is deposited by electron beam evaporation, the reflectance control layer is deposited by thermal evaporation, and the spectral flatness control layer is deposited by electron beam evaporation.
10. The wide-band low-transmittance and low-reflectance reflector according to claim 9, wherein the evaporation rate is 0.5-1nm/s when the metal main reflective layer and the reflectance control layer are plated by a thermal evaporation method; when the spacing layer is plated by adopting an electron beam evaporation method, the evaporation rate is 1.0-1.5 nm/s; when the low refractive index layer in the spectral flatness control layer is plated by adopting an electron beam evaporation method, the evaporation rate is 2-4nm/s, and when the high refractive index layer in the spectral flatness control layer is plated by adopting the electron beam evaporation method, the evaporation rate is 1-2 nm/s.
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| CN103728684A (en) * | 2014-01-02 | 2014-04-16 | 杭州科汀光学技术有限公司 | High-reflectance film and manufacturing method thereof |
| CN107703568A (en) * | 2016-08-09 | 2018-02-16 | 柯尼卡美能达株式会社 | Optical reflection film and back light for liquid crystal display device unit |
| CN108291986A (en) * | 2015-10-13 | 2018-07-17 | 视觉缓解公司 | Optical light filter with selective transmission rate and reflectivity |
| CN113589415A (en) * | 2021-08-04 | 2021-11-02 | 南京波长光电科技股份有限公司 | Ultra-wideband YAG laser reflection film and preparation method thereof |
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2021
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| CN1329259A (en) * | 2000-06-02 | 2002-01-02 | 佳能株式会社 | High mirror |
| CN103728684A (en) * | 2014-01-02 | 2014-04-16 | 杭州科汀光学技术有限公司 | High-reflectance film and manufacturing method thereof |
| CN108291986A (en) * | 2015-10-13 | 2018-07-17 | 视觉缓解公司 | Optical light filter with selective transmission rate and reflectivity |
| CN107703568A (en) * | 2016-08-09 | 2018-02-16 | 柯尼卡美能达株式会社 | Optical reflection film and back light for liquid crystal display device unit |
| CN113589415A (en) * | 2021-08-04 | 2021-11-02 | 南京波长光电科技股份有限公司 | Ultra-wideband YAG laser reflection film and preparation method thereof |
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| CN114488371B (en) | 2023-11-10 |
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