CN114485909A - MEMS vector hydrophone chip and MEMS vector hydrophone - Google Patents
MEMS vector hydrophone chip and MEMS vector hydrophone Download PDFInfo
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- CN114485909A CN114485909A CN202210064158.XA CN202210064158A CN114485909A CN 114485909 A CN114485909 A CN 114485909A CN 202210064158 A CN202210064158 A CN 202210064158A CN 114485909 A CN114485909 A CN 114485909A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 235000012431 wafers Nutrition 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 230000009471 action Effects 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 239000002994 raw material Substances 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
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- 230000001419 dependent effect Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 210000004081 cilia Anatomy 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
- G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
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Abstract
The invention discloses an MEMS vector hydrophone chip and an MEMS vector hydrophone, which comprise anchor points, wherein each anchor point comprises two layers of silicon wafers, the lower layer is a substrate layer, and the upper layer is an acoustic sensitive structure layer; one end of the acoustic sensitive structure is fixedly connected with the anchor point, and the other end of the acoustic sensitive structure extends towards the direction far away from the anchor point to form a free end; the at least one group of resistance elements comprise a first resistance element arranged at one end of the acoustic sensitive structure connected with the anchor point and a second resistance element arranged on the acoustic sensitive structure layer, and the initial values of the first resistance element and the second resistance element are the same and jointly form a Wheatstone bridge; the resistive element is connected to two output ports. The hydrophone is formed by processing silicon wafers, so that the raw material cost is greatly reduced, and the cost is low.
Description
Technical Field
The invention relates to the technical field of Micro-electro Mechanical Systems (MEMS) sensors, in particular to a MEMS vector hydrophone chip and a MEMS vector hydrophone with the same.
Background
Signals such as electromagnetic, infrared and light are quickly attenuated when being transmitted underwater, and can not be transmitted in a long distance. Acoustic waves are the only form of energy currently known that can propagate remotely under water. The device capable of converting the acoustic signal and the electric signal into each other is called an underwater acoustic transducer, and the device capable of converting only the underwater acoustic signal into the electric signal is called a hydrophone. The hydrophone is a passive detection means, has the characteristics of low power consumption, strong concealment and the like, and is widely applied to underwater military activities. A hydrophone capable of measuring only a sound pressure parameter in a sound field is called a scalar hydrophone, and a hydrophone capable of measuring vector information such as velocity, acceleration, sound pressure gradient and the like in the sound field is called a vector hydrophone. Compared with scalar hydrophones, the vector hydrophone can reflect the actual situation of a sound field in more detail, and in addition, the vector hydrophone array has larger array gain and long detection distance. Therefore, the vector hydrophone has important significance in underwater detection.
The Chinese published application patent, application number CN202010205286.2, discloses a vector hydrophone, which comprises a first ultrasonic vibrator, a second ultrasonic vibrator, a laser emitter, a laser detector, a camera and a processor, wherein the first ultrasonic vibrator is connected with the laser emitter, the second ultrasonic vibrator is connected with the laser detector, the camera and the processor, and the camera is connected with the processor through a data line.
The Chinese published application patent, application number CN202010408496.1, discloses a vector hydrophone comprising a mass block, an elastic cylinder, an optical fiber interferometer, a shell for placing the mass block, the elastic cylinder and the optical fiber interferometer, wherein the reference interferometer and the sensing interferometer are packaged in the shell of the same hydrophone.
The Chinese published application patent, application number CN202010692654.0, discloses a miniaturized MEMS capacitive composite co-vibrating vector hydrophone, which comprises an MEMS capacitive accelerometer, a fixed core, a vertical suspension rod, a piezoelectric ceramic ring, a sound-transmitting sealed shell and a conical helical spring. The MEMS capacitive acceleration sensor is orthogonally arranged in the fixed core, the vertical suspension rod penetrates through the whole fixed core, and the piezoelectric ceramic ring is sleeved outside the fixed core.
The vector hydrophone disclosed in the above-mentioned chinese published application needs to be assembled with various components of different types, resulting in a relatively large volume and low efficiency, and consistency between different vector hydrophones is difficult to ensure.
The Chinese published application patent, application number CN201410402582.6, discloses a vector hydrophone comprising a four-beam-arm silicon microstructure, a miniature columnar body, a central connecting body, a driving electrode and a detection electrode, wherein the lower end of the miniature columnar body is vertically fixed in the center of the upper surface of the central connecting body.
The Chinese published application patent of differential vibration isolation type MEMS vector hydrophone, application No. CN201410626399.4, discloses a vector hydrophone comprising a silicon base, a cantilever beam, a central connecting body, and miniature columnar bodies symmetrically bonded up and down, wherein eight strain piezoresistors are arranged on the cross-shaped cantilever beam.
The Chinese published application patent, application number CN201910687817.3, discloses a vector hydrophone including a square substrate, four cantilever beams and a cilium, one end of the cilium is connected with the mass block and is in a vertical structure with the cantilever beams, and non-uniform periodic reflection gratings are respectively carved on the four cantilever beams.
The above-mentioned chinese published application patents all realize the miniaturization of the vector hydrophone, but the acoustic wave sensitive structure needs to be heterologously integrated with the silicon-based chip, the silicon-based structure is easily damaged in the integration process, and the defects of low production efficiency, poor performance consistency, high cost and the like are overcome.
Disclosure of Invention
In view of at least one of the above technical problems, an object of the present invention is to provide an MEMS vector hydrophone chip and an MEMS vector hydrophone having the same, which employs a single pivot structure, can effectively reduce the influence of package stress on the hydrophone, and is fabricated by using a silicon wafer, so that the raw material cost is greatly reduced, and the cost is low.
The technical scheme of the invention is as follows:
one of the objects of the present invention is to provide a MEMS vector hydrophone chip, comprising:
the anchor point consists of two layers of silicon wafers, wherein the lower layer is a substrate layer, and the upper layer is an acoustic sensitive structure layer;
the end of the acoustic sensitive structure is fixedly connected with the anchor point, and the other end of the acoustic sensitive structure extends towards the direction far away from the anchor point to form a free end;
the acoustic sensitive structure comprises an acoustic sensitive structure layer, at least one group of resistor elements and a plurality of groups of resistors, wherein the acoustic sensitive structure layer comprises an anchor point and an acoustic sensitive structure layer, the anchor point is arranged on the acoustic sensitive structure layer, the group of resistor elements comprises a first resistor element arranged on one end of the acoustic sensitive structure layer connected with the anchor point and a second resistor element arranged on the acoustic sensitive structure layer, and the first resistor element and the second resistor element have the same initial value and jointly form a Wheatstone bridge;
the resistance element is connected with two output ports, and when the chip is not subjected to the action of sound waves, the output voltages of the two output ports are equal; when the chip is subjected to the action of sound waves, the output voltage of one output port is increased, and the output voltage of the other output port is decreased.
Preferably, the number of the acoustically sensitive structures is two, two acoustically sensitive structures are orthogonally arranged on two adjacent sides of the anchor point, and a wheatstone bridge is formed between each acoustically sensitive structure and the anchor point.
Preferably, the silicon wafer is an N-type silicon wafer doped with phosphorus, and the resistivity is 1-10 omega-cm.
Preferably, the first resistive element comprises two piezoresistors symmetrically distributed at one end of the acoustically sensitive structure connected to the anchor point and close to the edge of the acoustically sensitive structure, and the second resistive element also comprises two piezoresistors, the initial values of the four piezoresistors being the same.
Preferably, the piezoresistor is doped with boron.
Preferably, four piezoresistors are connected through an aluminum wire to obtain a wheatstone bridge, wherein one piezoresistor in the first resistor element and one piezoresistor in the second resistor element are connected and connected with one output port, and the other piezoresistor in the first resistor element and the other piezoresistor in the second resistor element are connected and connected with the other output port; the other ends of the two piezoresistors in the first resistor element are connected with a power supply VDD, and the other ends of the two piezoresistors in the second resistor element are grounded.
It is another object of the present invention to provide a MEMS vector hydrophone chip comprising any one of the above MEMS vector hydrophone chips.
Compared with the prior art, the invention has the advantages that:
the MEMS vector hydrophone chip disclosed by the invention adopts a single pivot structure, can effectively reduce the influence of packaging stress on the hydrophone, is processed by adopting a silicon wafer, greatly reduces the cost of raw materials and has low cost.
Drawings
The invention is further described with reference to the following figures and examples:
FIG. 1 is a schematic structural diagram of a one-dimensional MEMS vector hydrophone chip according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a partially enlarged structure of the one-dimensional MEMS vector hydrophone chip of FIG. 1;
FIG. 3 is a schematic structural diagram of a two-dimensional MEMS vector hydrophone chip according to an embodiment of the invention;
FIG. 4 is a schematic diagram of a partially enlarged structure of the two-dimensional MEMS vector hydrophone chip of FIG. 3;
FIG. 5 is a schematic diagram of a Wheatstone bridge of a MEMS vector hydrophone chip according to an embodiment of the invention;
FIG. 6 is a finite element simulation model of a one-dimensional MEMS vector hydrophone chip according to an embodiment of the present invention;
FIG. 7 is a first-order mode shape diagram of a one-dimensional MEMS vector hydrophone chip according to an embodiment of the invention;
FIG. 8 is a graph of the frequency response of a one-dimensional MEMS vector hydrophone chip according to an embodiment of the invention;
fig. 9 is a directivity diagram of a one-dimensional MEMS vector hydrophone chip according to an embodiment of the present invention.
Wherein: 1. an anchor point; 2. an acoustically sensitive structure; 3. a Wheatstone bridge; 31. a first resistance element; 311. a voltage dependent resistor R1; 312. a voltage dependent resistor R2; 32. a second resistance element; 321. a voltage dependent resistor R3; 322. a voltage dependent resistor R4; 33. a power supply VDD; 34. an aluminum wire; 35. a first output port; 36. a second output port; 37. and (4) grounding.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
Example (b):
referring to fig. 1 to 9, a MEMS vector hydrophone chip according to an embodiment of the present invention includes anchor points 1, at least one acoustically sensitive structure 2, and at least one set of resistive elements. Wherein the anchor point is composed of two silicon wafers (not shown), the lower layer is a substrate layer (not shown), and the upper layer is an acoustic sensitive structure layer (not shown). The acoustic sensitive structure 2 is a sheet-shaped elastic sensitive beam with single end fixed on the anchor point 1, one end of the sensitive beam is fixedly connected with the anchor point 1, the other end extends towards the direction far away from the anchor point 1 to form a free end, the free end deforms under the action of sound waves and is under the action of stress, namely, the hydrophone chip is of a single-pivot structure, and the influence of packaging stress on the performance of the hydrophone can be effectively reduced. The resistance elements are arranged on the acoustic sensitive structure layer and the acoustic sensitive structure of the anchor point, any group of resistance elements comprises a first resistance element 31 arranged on the acoustic sensitive structure 2 and a second resistance element 32 arranged on the anchor point 1, and the first resistance element 31 and the second resistance element 32 form a Wheatstone bridge 3. It should be noted that the first resistance element 31 is disposed at the root of the connection between the acoustically sensitive structure 2 and the anchor point 1 and is close to the edge of the acoustically sensitive structure 2, that is, the front side and the rear side of the right end of the acoustically sensitive structure 2 shown in fig. 1 or fig. 2, and the purpose of the design is to maximize the stress applied to the first resistance element 31 when the acoustically sensitive structure 2 is subjected to the action of sound waves, so as to achieve more sensitive and accurate testing. The second resistive element 32 is arranged at the anchor point 1, the second resistive element 32 being free from stress when the acoustically sensitive structure 2 is subjected to acoustic waves. The resistance element is connected with two output ports, and when the chip is not subjected to the action of sound waves, the output voltages of the two output ports are equal. When the chip is subjected to the action of sound waves, the output voltage of one output port is increased, and the output voltage of the other output port is decreased. As an alternative embodiment, as shown in fig. 3 to 4, the number of acoustically sensitive structures 2 is two, and two acoustically sensitive structures 2 are orthogonally arranged, and specifically, two acoustically sensitive structures 2 are arranged on two adjacent sides of the anchor point 1. A set of wheatstone bridges 3 is provided on each acoustically sensitive structure 2 and anchor point 1. And the measurement of two-dimensional sound wave signals in a plane is realized. Compared with other MEMS vector hydrophones in the prior art which need to use an SOI (Silicon-on-Insulator) wafer, the MEMS vector hydrophone greatly reduces the cost of raw materials, reduces the processing steps and has the advantage of low cost.
For the silicon wafer of the anchor point 1, the silicon wafer is an N-type silicon wafer doped with phosphorus, and the resistivity is 1-10 omega-cm. The content of phosphorus in the silicon wafer is not particularly limited and described, and is not the creation point of the present invention, and can be selected by those skilled in the art according to actual needs.
Specifically, the first resistance element 31 includes two piezoresistors, the second resistance element 32 also includes two piezoresistors, the initial values of the four piezoresistors are the same, and all the piezoresistors are doped with a certain amount of boron element by using an ion implantation process. The specific process parameters of the ion implantation process are not particularly limited to the conventional ion implantation process, which is the prior art. The doping amount of boron in the varistor is not particularly limited, and those skilled in the art can select and design the varistor according to the actual required current-resistant situation without departing from the inventive point. In this embodiment, an example is described in which an acoustically sensitive structure 2 is disposed on one side of an anchor point 1, four piezoresistors are respectively defined as a piezoresistor R1, a piezoresistor R2, a piezoresistor R3, and a piezoresistor R4, where the piezoresistor R1 and the piezoresistor R2 are two piezoresistors disposed on the acoustically sensitive structure 2, the piezoresistor R3 and the piezoresistor R4 are two piezoresistors disposed on the anchor point 1, the piezoresistor R1 and the piezoresistor R3 are located on the same side, that is, on the back side shown in fig. 1 or fig. 2, and the piezoresistor R2 and the piezoresistor R4 are located on the same side, that is, on the front side shown in fig. 1 or fig. 2. All the resistive elements of the wheatstone bridge 3 are connected by aluminium wires 34. Specifically, as shown in fig. 5, one end of the varistor R1 (reference numeral 311 in the figure) is connected to one end of the varistor R3 (reference numeral 313 in the figure) and the connection between the two is connected to one output port (for convenience of description and distinction, this output port is described as a first output port 35), one ends of the varistor R2 (reference numeral 312 in the figure) and the varistor R4 (reference numeral 314 in the figure) are connected and the connection between the two is connected to the other output port (for convenience of description and distinction, this output port is described as a second output port 36), the other ends of the varistor R1 and the varistor R2 are connected to one end of the power supply VDD 33, and the other ends of the varistor R3 and the varistor R4 are connected to the other end of the power supply VDD 33 and to the ground 37. When the hydrophone is not acted by the sound wave signal, the four piezoresistors are not acted by stress, the resistance value is unchanged, and the output voltages of the two output ports are half of the power supply VDD 33. However, when the hydrophone is subjected to the action of sound waves in the Y direction, that is, the front-back direction shown in fig. 7, the acoustically sensitive structure 2 is subjected to bending moment deformation under the action of sound wave pressure, the piezoresistor R1 and the piezoresistor R2 are respectively subjected to compressive stress and tensile stress (or tensile stress and compressive stress) to become smaller, larger (or larger, smaller), the piezoresistor R3 and the piezoresistor R4 are distributed on the anchor point 1 and are not subjected to stress, and the resistance values cannot change, so that the output voltages of the two output ports are one half larger than the power supply VDD 33 and the other half smaller than the power supply VDD 33, and the two output voltage differential amplification realizes the conversion of sound wave signals into electric signals.
In order to verify the feasibility of the structure provided by the embodiment of the invention, a finite element simulation model is established for verification. Simulation model as shown in fig. 6, the hydrophone is surrounded by water, and the two piezoresistors of the first resistive element 31 and the two piezoresistors of the second resistive element 32 are connected by a coincident edge pair. The first-order mode shape of the hydrophone is shown in fig. 7, the acoustically sensitive structure 2 is subjected to bending deformation, and the piezoresistor R1 and the piezoresistor R2 are alternately subjected to compressive stress and tensile stress. The frequency response curve of the hydrophone when subjected to a sound wave with an amplitude of 1Pa in the + Y direction (i.e., in the backward direction as shown in fig. 7) is shown in fig. 8, and the directivity of the hydrophone when the frequency of the sound wave is 530Hz is shown in fig. 9. Simulation results show that the MEMS vector hydrophone chip provided by the embodiment of the invention can realize the functions of sound wave detection and orientation.
The embodiment of the invention also provides the MEMS vector hydrophone, which comprises the MEMS vector hydrophone chip of the embodiment. Due to the chip of the embodiment, the chip at least has the beneficial effects of the chip of the embodiment, and details are not repeated.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.
Claims (7)
1. A MEMS vector hydrophone chip, comprising:
the anchor point consists of two layers of silicon wafers, wherein the lower layer is a substrate layer, and the upper layer is an acoustic sensitive structure layer;
one end of the acoustic sensitive structure is fixedly connected with the anchor point, and the other end of the acoustic sensitive structure extends towards the direction far away from the anchor point to form a free end;
the acoustic sensitive structure comprises an acoustic sensitive structure layer, at least one group of resistor elements and a plurality of groups of resistors, wherein the acoustic sensitive structure layer comprises an anchor point and an acoustic sensitive structure layer, the anchor point is arranged on the acoustic sensitive structure layer, the group of resistor elements comprises a first resistor element arranged on one end of the acoustic sensitive structure layer connected with the anchor point and a second resistor element arranged on the acoustic sensitive structure layer, and the first resistor element and the second resistor element have the same initial value and jointly form a Wheatstone bridge;
the resistance element is connected with two output ports, and when the chip is not subjected to the action of sound waves, the output voltages of the two output ports are equal; when the chip is subjected to the action of sound waves, the output voltage of one output port is increased, and the output voltage of the other output port is decreased.
2. The MEMS vector hydrophone chip of claim 1, wherein the number of acoustically sensitive structures is two, two acoustically sensitive structures are orthogonally disposed on two adjacent sides of the anchor point, and a wheatstone bridge is formed between each acoustically sensitive structure and the anchor point.
3. The MEMS vector hydrophone chip of claim 1, wherein the silicon wafer is an N-type silicon wafer doped with phosphorus, and the resistivity is 1-10 Ω.
4. The MEMS vector hydrophone chip of claim 1, wherein the first resistive element comprises two piezoresistors symmetrically disposed at an end of the acoustically sensitive structure connected to the anchor point and near an edge of the acoustically sensitive structure, and wherein the second resistive element comprises two piezoresistors, and wherein the initial values of the four piezoresistors are the same.
5. The MEMS vector hydrophone chip of claim 4, wherein the piezoresistors are doped with boron.
6. The MEMS vector hydrophone chip of claim 4, wherein four piezoresistors are connected by aluminum wires to form a wheatstone bridge, wherein one of the piezoresistors in the first resistive element and one of the piezoresistors in the second resistive element are connected and connected to one output port, and wherein the other one of the piezoresistors in the first resistive element and the other one of the piezoresistors in the second resistive element are connected and connected to the other output port; the other ends of the two piezoresistors in the first resistor element are connected with a power supply VDD, and the other ends of the two piezoresistors in the second resistor element are grounded.
7. A MEMS vector hydrophone comprising a MEMS vector hydrophone chip as claimed in any one of claims 1-6.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210064158.XA CN114485909A (en) | 2022-01-20 | 2022-01-20 | MEMS vector hydrophone chip and MEMS vector hydrophone |
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| CN202210064158.XA CN114485909A (en) | 2022-01-20 | 2022-01-20 | MEMS vector hydrophone chip and MEMS vector hydrophone |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101738250A (en) * | 2009-12-30 | 2010-06-16 | 中北大学 | T-shaped sensitive body of vector hydrophone |
| CN102853898A (en) * | 2012-08-11 | 2013-01-02 | 中北大学 | Three-dimensional MEMS (Micro-electromechanical System) monolithic integrated vector hydrophone |
| US20150085618A1 (en) * | 2012-05-24 | 2015-03-26 | Optoplan As | Hydrophone housing |
| CN112903088A (en) * | 2021-01-18 | 2021-06-04 | 中国兵器工业集团第二一四研究所苏州研发中心 | MEMS bionic vector acoustic wave sensor with cross-shaped sensitive structure and processing method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101738250A (en) * | 2009-12-30 | 2010-06-16 | 中北大学 | T-shaped sensitive body of vector hydrophone |
| US20150085618A1 (en) * | 2012-05-24 | 2015-03-26 | Optoplan As | Hydrophone housing |
| CN102853898A (en) * | 2012-08-11 | 2013-01-02 | 中北大学 | Three-dimensional MEMS (Micro-electromechanical System) monolithic integrated vector hydrophone |
| CN112903088A (en) * | 2021-01-18 | 2021-06-04 | 中国兵器工业集团第二一四研究所苏州研发中心 | MEMS bionic vector acoustic wave sensor with cross-shaped sensitive structure and processing method thereof |
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