CN114481324A - Semiconductor processing apparatus and heating method for target growth - Google Patents

Semiconductor processing apparatus and heating method for target growth Download PDF

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Publication number
CN114481324A
CN114481324A CN202210090120.XA CN202210090120A CN114481324A CN 114481324 A CN114481324 A CN 114481324A CN 202210090120 A CN202210090120 A CN 202210090120A CN 114481324 A CN114481324 A CN 114481324A
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China
Prior art keywords
heater
reaction chamber
target
heat radiation
growth
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CN202210090120.XA
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Chinese (zh)
Inventor
崔殿鹏
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to CN202210090120.XA priority Critical patent/CN114481324A/en
Publication of CN114481324A publication Critical patent/CN114481324A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state

Abstract

The application discloses a semiconductor processing device and a heating method for target growth, which can optimize the quality of a prepared target and reduce defects in the target. The semiconductor processing apparatus includes: a reaction chamber including a first end and a second end sequentially arranged in an axial direction of the reaction chamber, and a target formed at the first end; a heating module comprising: a first heater disposed above the first end and having at least a heat radiation surface distributed along a first growth direction of the target; a second heater disposed at the first end side surface and having at least a heat radiation surface distributed along a second growth direction of the target; a third heater disposed below the second end and having at least a heat radiation surface distributed along a second growth direction of the target; a fourth heater disposed at the second end side surface and having at least a heat radiation surface distributed along the first growth direction of the target; the heating powers of the first heater, the second heater, the third heater and the fourth heater are mutually independent.

Description

Semiconductor processing apparatus and heating method for target growth
Technical Field
The application relates to the field of target growth, in particular to semiconductor processing equipment and a heating method for target growth.
Background
For the preparation of the target, Physical Vapor Transport (PVT) or the like can be used. For example, when silicon carbide (SiC) is produced, SiC crystals having high purity can be obtained by the PVT method.
SiC belongs to a third-generation semiconductor material, has the characteristics of wide forbidden band, high thermal conductivity, high critical breakdown field, high electron saturation drift rate and the like, is a hot material for preparing high-temperature, high-frequency and high-power devices, and has wide prospects in the fields of electric automobiles, high-speed rails, communication, aerospace and the like.
In the prior art, the target prepared by adopting a PVT method and the like is not high in quality, is easy to have defects of dislocation, stacking fault and the like, and is not beneficial to subsequent use.
Disclosure of Invention
In view of the above, the present application provides a semiconductor processing apparatus and a heating method for target growth, which can optimize the quality of the prepared target and reduce the defects of the target.
The present application provides a semiconductor processing apparatus for preparing an object, comprising: a reaction chamber including a first end and a second end sequentially arranged in an axial direction of the reaction chamber, and the target being formed at the first end; a heating module comprising: a first heater disposed above the first end and having at least a heat radiation surface distributed along a first growth direction of the target; the second heater is arranged on the side surface of the first end and at least provided with a heat radiation surface distributed along the second growth direction of the target object, and the top of the second heater is higher than the plane where the first end of the reaction chamber is located or is flush with the plane where the first end of the reaction chamber is located; the third heater is arranged below the second end and at least provided with a heat radiation surface distributed along the second growth direction of the target object, and the bottom of the third heater is lower than the plane where the second end of the reaction chamber is located or is flush with the plane where the second end of the reaction chamber is located; a fourth heater provided at the second end side surface and having at least a heat radiation surface distributed along the first growth direction of the target; the heating powers of the first heater, the second heater, the third heater and the fourth heater are mutually independent.
Optionally, an outer contour shape of a projection of the heat radiation surface of the first heater on a plane where the first end is located is matched with a shape of the first end, and the projection of the heat radiation surface of the first heater on the plane where the first end is located at least partially covers the first end of the reaction chamber; the projection of the heat radiation surface of the fourth heater on the plane of the second end at least partially covers the second end of the reaction chamber.
Optionally, the reaction chamber includes a cylindrical cavity and a circular top cover, the first heater and the fourth heater are both in a disc shape, the second heater and the third heater are both in a cylindrical shape, the cavity is surrounded by the second heater and the third heater, and the first heater and the fourth heater are respectively disposed above the top cover and below the bottom of the cavity.
Optionally, the length of the heat radiation surface of the second heater in the axial direction of the reaction chamber is smaller than the length of the heat radiation surface of the third heater in the axial direction of the reaction chamber.
Optionally, a distance between the heat radiation surface of the first heater and the first end is greater than or equal to a distance between the heat radiation surface of the fourth heater and the second end.
Optionally, a gap exists between the second heater and the third heater, and the size of the gap ranges from 15mm to 30 mm.
Optionally, the first heater is further provided with a first through hole, the first through hole penetrates through the first heater and exposes the first end of the reaction chamber, and/or: the fourth heater is provided with a second through hole which penetrates through the fourth heater and exposes the second end of the reaction chamber.
Optionally, the heating system further comprises a power control module connected to the heating modules and configured to control the heating power of each heater in the heating modules respectively.
The application provides a heating method for target growth, which uses the semiconductor processing equipment to realize heating, wherein the target is grown at a first end of a reaction chamber, and the heating method comprises the following steps: controlling a temperature distribution of the first end of the reaction chamber in a first growth direction of the target by the first heater; controlling the temperature distribution of the side surface of the first end of the reaction chamber in the second growth direction of the target object through the second heater; controlling the temperature distribution of the side surface of the second end of the reaction chamber in the second growth direction through the third heater; and controlling the temperature distribution of the second end of the reaction chamber in the first growth direction through the fourth heater.
Optionally, the heating power ratio of the first heater, the second heater, the third heater and the fourth heater is (0-3): (0-4): (0-5): (5-8).
According to the semiconductor processing equipment and the heating method for the growth of the target, the target can be prepared by using the heating module, and the first heater is arranged above the first end where the target is located, so that the temperature field in the first growth direction of the target can be controlled by the first heater, the isothermal line of the growth interface of the target can be adjusted as required, the growth interface of the flat or slightly convex target is obtained, and the quality of the finally obtained target is improved.
In addition, the second heater and the third heater are arranged around the first end, the second heater and the third heater at least have heat radiation surfaces distributed along the second growth direction of the target object, and the heating power of the second heater and the heating power of the third heater can be independently controlled, so that the temperature gradient of the reaction chamber in the second growth direction can be controlled through the second heater and the third heater, the reaction gas transportation speed is increased, and the growth speed of the target object is increased.
And because the fourth heater is arranged below the second end, the temperature of the second end can be controlled by the fourth heater, and sufficient temperature is provided for the reaction material placed at the second end, so that the growth speed of the target object is accelerated.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present application.
FIG. 2 is a schematic top view of a first heater of a semiconductor processing apparatus according to an embodiment of the present application.
FIG. 3 is a schematic view of an isotherm within a reaction chamber of a semiconductor processing apparatus according to an embodiment of the present application.
FIG. 4 is a flow chart illustrating steps of a heating method for growing a target according to an embodiment of the present disclosure.
Detailed Description
It has been found that the above problems occur mainly because it is difficult to provide a controllable temperature field for the reaction environment in the conventional PVT technique, and the shape of the growth interface of the target is similar to the isotherm of the interface, and if the isotherm at the growth interface is not straight, the growth interface of the target is uneven, resulting in defects.
The isothermal line comprises three conditions, namely a convex isothermal line with a downward center and a low temperature at the center of the bulge, and a concave isothermal line with an upward center and a high temperature at the center of the bulge. A convex isotherm produces a convex target interface, a concave isotherm produces a concave target interface, and a flat isotherm produces a flat target interface. The concave or convex interface morphology can cause problems in the quality of the target, leading to defects.
In particular, the convex or concave isotherms tend to induce thermoelastic stresses during target growth, resulting in stress and thermal stress related target defects such as stacking faults, polytype and basal plane dislocations, and the like. The flat isotherm suppresses thermal stress of the target due to temperature uniformity in the first growth direction of the growth interface, thereby reducing target defects. Therefore, to grow a high quality target, it is necessary to provide a suitable temperature field at the growth interface of the target, and the temperature difference should have a relatively flat isotherm at the growth interface.
Therefore, in order to solve the above problems, the present application provides a semiconductor processing apparatus and a heating method for target growth, which can provide a controllable temperature field for a target preparation process, so as to form a flat or slightly convex isotherm on a target growth interface, avoid generating a concave or excessively convex temperature field, prepare a high-quality target, and obtain a flat or slightly convex target interface, thereby improving the preparation quality of the target and reducing the probability of target defects.
The following will further describe the semiconductor processing apparatus and the heating method for growing the object, with reference to the drawings and the embodiments.
Fig. 1 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present application.
The present application provides in a first aspect a semiconductor processing apparatus for preparing a target 22, comprising: a reaction chamber 20 including a first end 40 and a second end 41 sequentially arranged in an axial direction of the reaction chamber 20, and a target 22 formed at the first end 40; a heating module including a first heater 25 disposed above the first end 40 and having at least a heat radiation surface distributed along a first growth direction of the target 22; a second heater 24 disposed at a side of the first end 40 and having at least a heat radiation surface distributed along a second growth direction of the target 22, wherein a top of the second heater 24 is higher than a plane of the first end 40 of the reaction chamber 20 or is flush with the plane of the first end 40 of the reaction chamber; a third heater 26 disposed below the second end 41 and having at least a heat radiation surface distributed along the second growth direction of the target 22, wherein the bottom of the third heater 26 is lower than the plane of the second end 41 of the reaction chamber 20 or is flush with the plane of the second end 41 of the reaction chamber 20; a fourth heater 27 disposed on the side of the second end 41 and having at least a heat radiation surface distributed along the first growth direction of the target 22; the heating powers of the first heater 25, the second heater 24, the third heater 26, and the fourth heater 27 are independent of each other.
Since the first heater 25 is disposed above the first end 40 where the target 22 is located, the temperature field in the first growth direction of the target 22 can be controlled by the first heater 25, the isotherm of the growth interface of the target 22 can be adjusted as needed, a flat or slightly convex growth interface of the target 22 is obtained, and the quality of the obtained target 22 is improved.
Moreover, since the second heater 24 and the third heater 26 are disposed around the first end 40, the second heater 24 and the third heater 26 at least have heat radiation surfaces distributed along the second growth direction of the target 22, and the heating powers of the second heater 24 and the third heater 26 can be independently controlled, the temperature gradient of the reaction chamber 20 in the second growth direction can be controlled by the second heater 24 and the third heater 26, so as to accelerate the reaction gas transportation speed and improve the growth speed of the target 22.
Moreover, since the fourth heater 27 is disposed below the second end 41, the temperature of the second end 41 can be controlled by the fourth heater 27 to provide a sufficient temperature for the reaction material placed at the second end 41, thereby accelerating the growth rate of the target 22.
Moreover, due to the more controllable temperature field environment, as the radial dimensions of the induction coil and the reaction chamber 20 increase, the temperature distribution in the first growth direction of the growth interface of the target 22 can also be kept uniform, which is beneficial for preparing high-quality large-diameter targets 22, such as large-diameter targets 22 with radial dimensions of more than 150 mm.
In some embodiments, the reaction chamber 20 includes a cylindrical cavity 60 and a circular top cover 50. A circular top cover 50 is disposed on the top of the cylindrical cavity 60 to form a closed reaction chamber 20 together with the cavity 60, and the target 22 is formed on a side surface of the top cover 50 facing the inside of the cavity 60.
In some embodiments, the height of the reaction chamber 20 is about 200mm to 400mm, i.e., the overall height of the cylindrical chamber 60 and the circular lid 50 is about 200mm to 400mm, and the radial dimension of the cylindrical chamber 60 is configured to be consistent with the overall height. In practice, the specific shape and size of the reaction chamber 20 may also be set as desired.
In some embodiments, the reaction chamber 20 includes a crucible including a crucible body having a cylindrical shape corresponding to the cavity 60 of the reaction chamber 20 and a crucible cover having a circular shape corresponding to the top cover 50 of the reaction chamber 20.
The crucible cover is arranged on the top of the crucible body when in use. The first heater 25 is located above the crucible cover, the fourth heater 27 is located below the bottom of the crucible body, and the second heater 24 and the third heater 26 are disposed around the side of the crucible and are sequentially distributed on the upper side of the crucible and the lower side of the crucible.
In some embodiments, the crucible is made of a material comprising at least one of graphite, tantalum, tungsten, refractory compounds, tantalum carbide, niobium carbide.
Illustratively, the crucible is a graphite crucible.
In physical vapor deposition (PVT) using the reaction chamber 20 to form the target 22, the reaction material 30 is stacked at the second end 41 of the reaction chamber 20, the seed holder 21 is provided at the first end 40 of the reaction chamber 20, and the seed 22 is provided on the surface of the seed holder 21 to form the target 22.
During the reaction, the reaction gas formed by sublimation of the reaction material 30 rises to the upper half of the reaction chamber, i.e., the first end, and is crystallized on the seed crystal 22 to form the target 22.
In some embodiments, the target 22 is a SiC crystal and the reactant material, including a silicon carbide frit, is deposited at the second end 41 of the reaction chamber 20. Si and Si formed by sublimating silicon carbide powder are distributed in the reaction gas environment2C、SiC2And (3) the gas phase components. Si, Si2C、SiC2The isogas phase components are transported to the surface of the seed crystal 22 arranged on the seed crystal holder 21 of the first end 40, and the SiC crystal growth is carried out on the surface of the seed crystal 22 by crystallization.
Illustratively, the silicon carbide powder is 6H-SiC polycrystalline grains having a grain size of 0.5mm to 2 mm.
The growth interface of the target 22 is perpendicular to the axial direction of the reaction chamber 20, and the target 22 can grow in the axial direction of the reaction chamber 20 and can also grow in a direction perpendicular to the axial direction of the reaction chamber 20, the first growth direction being perpendicular to the axial direction of the reaction chamber 20, and the second growth direction being parallel to the axial direction of the reaction chamber 20.
The first growth direction and the second growth direction may be set according to the production environment and production conditions of the specific object 22.
In some embodiments, the first heater 25, the second heater 24, the third heater 26, and the fourth heater 27 are disposed coaxially with the reaction chamber 20, and the first heater 25, the second heater 24, the third heater 26, and the fourth heater 27 and the reaction chamber 20 are surrounded by thermal insulators, which are not drawn in the drawings. In fact, the first heater 25, the second heater 24, the third heater 26, and the fourth heater 27 may be provided in the form and in the positional relationship with respect to the reaction chamber 20 as needed.
In some embodiments, the number of heaters disposed around the side of the reaction chamber 20 between the first end 40 and the second end 41 of the reaction chamber 20 is not limited to two, and may be more, such as four, five, or six, and each heater is disposed in concentric rings and sequentially distributed along the axial direction of the reaction chamber 20. In practice, the number of heaters positioned between the first end 40 and the second end 41 of the reaction chamber 20 may be set as desired.
In some embodiments, the projection of the heat radiation surface of the first heater 25 on the plane of the first end 40 has an outer contour shape matched with the shape of the first end 40, and the projection of the fourth heater 27 on the plane of the second end 41 has an outer contour shape matched with the shape of the second end 41, so that the temperature control effect is better. The projection of the heat radiation surface of the first heater 25 on the plane of the first end 40 at least partially covers the first end 40 of the reaction chamber 20; the projection of the heat radiating surface of the fourth heater 27 on the plane of the second end 41 at least partially covers the second end 41 of the reaction chamber 20. Therefore, the heat generated by the first heater 25 and the fourth heater 27 can be at least partially radiated to the first end 40 and the second end 41 of the reaction chamber 20 for temperature control.
In some embodiments, the outer diameter of the first heater 25 is between 100% and 110% of the outer diameter of the reaction chamber 20. The outer diameter of the fourth heater 27 is between 100% and 110% of the outer diameter of the reaction chamber 20.
Illustratively, the outer diameter of the first heater 25 is 100% of the outer diameter of the reaction chamber 20, which is equal to the outer diameter of the first end 40 of the reaction chamber 20. The outer diameter of the fourth heater 27 is 100% of the outer diameter of the reaction chamber 20, which is equal to the outer diameter of the second end 41 of the reaction chamber 20.
Illustratively, the reaction chamber 20 includes a cylindrical cavity 60 and a circular top cover 50. The first heater 25 and the fourth heater 27 are both disc-shaped, are matched with the shape of the top cover 50 and the bottom shape of the cavity 60, and are respectively arranged above the top cover 50 and below the cavity 60. The surface of one side of the first heater 25 facing the cavity 60 and the side of the fourth heater 27 facing the cavity 60 are heat radiation surfaces, and the projection of the heat radiation surface of the first heater 25 on the plane of the first end 40 is circular and is consistent with the shape of the top cover 50, and the shape of the top cover 50 is the shape of the first end 40. The outer contour shape of the projection of the fourth heater 27 on the plane where the second end 41 is located is circular, and is consistent with the shape of the bottom surface of the cavity 60, and the shape of the bottom surface of the cavity 60 is the shape of the second end 41.
The second heater 24 and the third heater 26 are cylindrical, surround the chamber 60 from the side of the chamber 60, and are disposed coaxially with the chamber 60, so that the second heater 24 and the third heater 26 are located at the same distance from the chamber 60. The surfaces of the second heater 24 and the third heater 26 facing the cavity 60 are heat radiating surfaces, so that each of the side surfaces of the cavity 60 has a heat radiating surface vertically opposite to the heat radiating surface, thereby obtaining a better temperature control effect.
And, the projection of the heat radiation surface of the first heater 25 on the plane where the first end 40 is located completely covers the first end 40 of the reaction chamber 20; the projection of the heat radiation surface of the fourth heater 27 on the plane of the second end 41 completely covers the second end 41 of the reaction chamber 20. Therefore, each of the top and bottom of the reaction chamber 20 has a heat radiation surface directly opposite thereto, so that a better temperature control effect can be obtained.
Therefore, the shapes of the first heater 25, the second heater 24, the third heater 26 and the fourth heater 27 are adapted to the overall shape of the reaction chamber 20, and the reaction chamber 20 can obtain a better temperature control effect.
In some embodiments, the distance between the first heater 25 and the first end 40 and the distance between the heat radiation surface of the fourth heater 27 and the second end 41 may be set according to the temperature requirements of the first end 40 and the second end 41.
Since the second end 41 of the reaction chamber 20 is used for placing the reaction material 30 and the first end 40 of the reaction chamber 20 is used for forming the target, there may be a difference in the reaction temperature required for the first end 40 and the second end 41 of the reaction chamber 20, and there may be a difference in the requirements for the distance between the heat radiation surface of the first heater 25 and the first end 40, and the distance between the heat radiation surface of the fourth heater 27 and the second end 41.
Illustratively, the reaction temperature required for the reaction mass 30 is high and the reaction temperature required for the reaction gas atmosphere is low, and therefore, the distance from the heat radiation surface of the first heater 25 to the first end 40 is set to be greater than or equal to the distance from the heat radiation surface of the fourth heater 27 to the second end 41.
In some embodiments, the heat radiating surface of the first heater 25 is spaced from the first end 40 by 20% to 80% of the axial length of the reaction chamber 20 in the reaction chamber 20. The heat radiating surface of the fourth heater 27 is spaced from the second end 41 by 10% to 50% of the axial length of the reaction chamber 20.
Illustratively, the first heater 25 is located directly above the first end 40 of the reaction chamber 20 at a distance of 40% of the axial length of the reaction chamber 20 from the first end 40 of the reaction chamber 20. The fourth heater 27 is located directly below the second end 41 of the reaction chamber 20 at a distance of 20% of the axial length of the reaction chamber 20 from the second end 41 of the reaction chamber 20.
In fact, the distance between the heat radiation surface of the first heater 25 and the first end 40 and the distance between the heat radiation surface of the fourth heater 27 and the second end 41 can also be set as required, and it is preferable to meet the requirement of the heating temperature of the first end 40 and the second end 41, and prevent heat dissipation caused by an excessively large distance, thereby ensuring the heating efficiency of the first heater 25 and the fourth heater 27.
In some embodiments, the first heater 25 is further provided with a first through hole 28, and the first through hole 28 penetrates the first heater 25 and exposes the first end 40 of the reaction chamber 20, so that the user can detect the temperature of the first end 40 of the reaction chamber 20. A user may use an infrared temperature detector to emit infrared rays for detection toward the first through hole 28 to detect the temperature of the first end 40 of the reaction chamber 20.
In some embodiments, the fourth heater 27 is provided with a second through hole 29, the second through hole 29 penetrates the fourth heater 27 and exposes the second end 41 of the reaction chamber 20 so that the user can detect the temperature of the second end 41 of the reaction chamber 20, and a rotation shaft is provided to drive the reaction chamber 20 to rotate around the axial direction of the rotation shaft. The user may emit infrared rays for detection toward the second through hole 29 using an infrared temperature detector to detect the temperature of the second end 41 of the reaction chamber 20. The user can also drive the reaction chamber 20 to rotate by using a hollow rotating shaft which passes through the second through hole 29, is fitted to the surface of the reaction chamber 20, has an aperture in the middle thereof, and exposes the surface of the second end 41 of the reaction chamber 20 through the aperture. Thus, the user is still able to detect the temperature of the second end 41 of the reaction chamber 20 using the infrared temperature detector. Specifically, the user uses an infrared temperature detector to emit infrared light toward the aperture, thereby detecting the temperature of the second end 41 of the reaction chamber 20.
Those skilled in the art can determine whether the corresponding through holes are required to be formed in the first heater 25 and the second heater 24 as needed. When the second through hole 29 is not provided on the fourth heater 27, the rotation of the reaction chamber 20 may be achieved by means of a turntable or the like.
By properly setting the radial dimensions of the first through hole 28 and the second through hole 29, the influence of the first through hole 28 on the heating effect of the first heater 25 and the influence of the second through hole 29 on the heating effect of the second heater 24 can be reduced.
In some embodiments, the first through-hole 28 has an aperture that is between 20% and 100% of the radial dimension of the first end 40 of the reaction chamber 20. The second through hole 29 has a diameter of between 30% and 60% of the radial dimension of the second end 41 of the reaction chamber 20.
Illustratively, the first through-hole 28 has a bore diameter that is 50% of the radial dimension of the first end 40 of the reaction chamber 20. The center of the fourth heater 27 is provided with a second through hole 29, and the aperture of the second through hole 29 is 30% of the radial size of the second end 41 of the reaction chamber 20.
The aperture of the first and second through holes 28 and 29 can be determined as desired by those skilled in the art.
In some embodiments, the top of the second heater 24 is spaced from the first end 40 of the reaction chamber 20 by 0% to 10% of the axial length of the reaction chamber 20. The bottom of the third heater 26 is spaced from the second end 41 of the reaction chamber 20 by 0% to 10% of the axial length of the reaction chamber 20.
Illustratively, the upper surface of the second heater 24 is flush with the top surface of the reaction chamber 20. The lower surface of the third heater 26 is flush with the bottom surface of the reaction chamber 20.
The second heater 24 and the third heater 26 are used to provide the reaction chamber 20 with temperature control in the axial direction of the reaction chamber 20, so that the length of the heat radiation surface of the second heater 24 and the third heater 26 in the axial direction of the reaction chamber 20 can be set in accordance with the expected stack height of the reaction material in the reaction chamber 20 and the dimension of the reaction gas atmosphere in the axial direction of the reaction chamber 20.
In some embodiments, the length of the heat radiation surface of the second heater 24 in the axial direction of the reaction chamber 20 is similar to the size of the reaction gas atmosphere in the reaction chamber 20 in the axial direction of the reaction chamber 20; the length of the heat radiation surface of the third heater 26 in the axial direction of the reaction chamber 20 is similar to the stacking height of the reaction material 30 in the reaction chamber 20, so that the second heater 24 and the third heater 26 can control the temperatures of the reaction material 30 and the reaction gas atmosphere, respectively. When the length of the reaction gas atmosphere in the axial direction of the reaction chamber 20 is small and the stacking height of the reaction material 30 is large, the heat radiation surface of the second heater 24 is shorter in the axial direction of the reaction chamber 20 than the heat radiation surface of the third heater 26 in the axial direction of the reaction chamber 20.
In some embodiments, the ratio of the length of the reaction gas atmosphere in the axial direction of the reaction chamber 20 to the stacking height of the reaction material 30 is (1-5): 5-8, so that the ratio of the length of the heat radiation surface of the second heater 24 in the axial direction of the reaction chamber 20 to the length of the heat radiation surface of the third heater 26 in the axial direction of the reaction chamber 20 is (1-5): 5-8.
In some other embodiments, the lengths of the heat radiation surfaces of the second heater 24 and the third heater 26 in the axial direction of the reaction chamber 20 may be set as desired, for example, the lengths of the heat radiation surfaces of the second heater 24 and the third heater 26 in the axial direction of the reaction chamber 20 are set to be equal.
In some embodiments, the length of the second heater 24 in the axial direction of the reaction chamber 20 is equal to the length of the heat radiation surface of the second heater 24 in the axial direction of the reaction chamber 20, and the length of the third heater 26 in the axial direction of the reaction chamber 20 is equal to the length of the heat radiation surface of the third heater 26 in the axial direction of the reaction chamber 20.
In some embodiments, a gap exists between the second heater 24 and the third heater 26 to reduce electromagnetic interference between the second heater 24 and the third heater 26.
Illustratively, the gap between the second heater 24 and the third heater 26 ranges in size from 15mm to 30 mm.
In some embodiments, in order to ensure the heating efficiency of the second heater 24 and the third heater 26, the distance between the second heater 24 and the side of the first end 40 and the distance between the third heater 26 and the side of the second end 41 are controlled to be suitable, so as to prevent the second heater 24 and the third heater 26 from being too far away from the reaction chamber 20, and the heat radiated by the two heaters is consumed by the air too much.
In some embodiments, the second heater 24 is between 15mm and 30mm from the side of the first end 40. The third heater 26 is located at a distance of between 15mm and 30mm from the side of the second end 41.
Illustratively, the second heater 24 is spaced 20mm from the side of the first end 40 and the third heater 26 is spaced 20mm from the side of the second end 41.
In some embodiments, controlling the heating power of the second heater 24 and the third heater 26 provides a gradient temperature field in the axial direction of the reaction chamber 20 for the reaction chamber 20, which helps to control the reaction rate of the reactant materials and the reaction gas environment.
The second end 41 of the reaction chamber 20 is a stacking area of the reaction material 30, the first end 40 is used for forming the target 22, the section of the first end 40 corresponds to the upper half section of the reaction chamber 20, and the upper half section of the reaction chamber 20 is a distribution area of the reaction gas environment. Since the temperature required for the reaction mass 30 is high and the temperature required for the reaction gas atmosphere is low, the heating power of the second heater 24 can be controlled to be smaller than that of the third heater 26 to provide a gradient temperature field gradually decreasing from the second end 41 to the first end 40 in the axial direction of the reaction chamber 20, and the decreasing direction of the gradient temperature field is opposite to the second growth direction of the target 22.
Illustratively, the target 22 is a SiC crystal, and by controlling the heating power of the second heater 24 and the third heater 26, a gradient temperature field which is increased by 5 ℃ to 20 ℃ per centimeter and is directed from the first end 40 to the second end 41 along the axial direction of the reaction chamber 20 is provided for the process of preparing the SiC crystal, so that the transportation of gas-phase components in the reaction chamber 20 is accelerated, the transportation speed of the sublimated reaction gas to the surface of the seed crystal 22 for the growth of the target 22 is accelerated, the growth rate of the target 22 is increased, and the growth efficiency of the target 22 is improved.
In some embodiments, the second heater 24 is further configured to cooperate with the heating power of the first heater 25 to provide a desired temperature field for the target 22 at the first end 40, the temperature field having an isotherm parallel to or slightly convex from a line of the first growth direction of the target 22 at least at the growth interface of the target 22.
Illustratively, the first growth direction temperature gradient of the growth interface of the target 22 is less than 1K/cm.
In some embodiments, the semiconductor processing apparatus further comprises a power control module connected to the heating modules for individually controlling heating power of each heater in the heating modules.
In some embodiments, the power control module is used to control the heating power of the first heater 25, the second heater 24, the third heater 26, and the fourth heater 27, respectively.
In some embodiments, the power control module includes a plurality of power control units respectively connected to the first heater 25, the second heater 24, the third heater 26, and the fourth heater 27, and independently controlling heating powers of the first heater 25 to the fourth heater 27. By independently controlling the heating power of each heater, the temperature gradient in the first growth direction of the growth interface of the target 22 can be reduced, thereby suppressing the thermal stress inside the crystal when the target 22 is grown, reducing the crystal defects of the target 22, and growing a high-quality target 22 having a flat or slightly convex interface. The reaction chamber 20 may also be provided with a gradient temperature field distributed along the second growth direction to increase the growth rate of the target 22.
In some embodiments, the ratio of the power applied by the first heater 25 to the total power is between 0% and 30%, the ratio of the power applied by the fourth heater 27 to the total power is between 50% and 80%, the ratio of the power applied by the second heater 24 to the total power is between 0% and 40%, and the ratio of the power applied by the third heater 26 to the total power is between 0% and 50%. When the power ratio of the heater is 0, it is equivalent to not configuring the corresponding heater.
Illustratively, the silicon carbide powder is used to prepare the formation target 22, and the target 22 is a SiC crystal. The proportion of the heating power of the first heater 25 to the total power is 5%, the proportion of the heating power of the fourth heater 27 to the total power is 70%, the proportion of the heating power of the second heater 24 to the total power is 5%, and the proportion of the heating power of the third heater 26 to the total power is 20%.
The silicon carbide powder is heated by the third heater 26 and the fourth heater 27 to be sublimated, and the sublimated reaction gas is crystallized and grown on the surface of the silicon carbide seed crystal 22 on the seed crystal holder 21.
By controlling the heating power of the first heater 25 and the second heater 24, an isotherm parallel to the first growth direction of the SiC crystal or slightly convex to the straight line of the first growth direction of the SiC crystal is formed on the growth interface of the SiC crystal, so that the SiC crystal has a flat or slightly convex growth interface, thereby obtaining a high-quality silicon carbide crystal. The temperature field can be seen in fig. 3.
In fact, the semiconductor processing apparatus is not limited to performing growth of SiC crystal. Because the heating power of each heater can be independently controlled, the method can be used for reducing the temperature gradient of the reaction chamber 20 in the axial direction and the radial direction, realizing the annealing or in-situ annealing of the target 22, maximizing the temperature of the position of the seed crystal 22, realizing the inversion of the temperature field in the crucible and preprocessing the seed crystal 22 before the target 22 grows.
And because the heating power of the first heater 25, the second heater 24, the third heater 26 and the fourth heater 27 can be controlled independently, the preparation of the target object 22 with a large diameter is also facilitated, and the target object 22 with a larger radial size (for example, the radial size is 200mm) can be prepared on the basis of the existing target object 22 with the radial size of 150mm, so that the requirement of the growth of the target object 22 with a large diameter is met.
In some embodiments, the first heater 25, the second heater 24, the third heater 26, and the fourth heater 27 each include at least one of a resistance heater, an induction heater, an arc heater, an electron beam heater, an infrared heater, and a medium heater. In fact, the specific type of heater may be provided as desired.
Illustratively, the first heater 25, the second heater 24, the third heater 26, and the fourth heater 27 are all resistance heaters.
Illustratively, the resistive heater is a graphite heater.
Illustratively, the resistive heater is a resistance wire heater.
The present application provides, in a second aspect, a method of heating a target 22 for growth.
Fig. 4 is a flowchart illustrating a heating method for growing the target object 22 according to an embodiment.
In this embodiment, the heating method for the growth of the target object 22 uses the semiconductor processing apparatus of the above embodiment to achieve heating, the target object 22 is grown at the first end 40 of the reaction chamber 20, and the heating method includes the following steps: step S1: controlling a temperature distribution of the first end 40 of the reaction chamber 20 in the first growth direction of the target 22 by the first heater 25; step S2: controlling a temperature distribution profile of a side surface of the first end 40 of the reaction chamber 20 in a second growth direction of the target 22 by the second heater 24; step S3: controlling the temperature distribution of the side surface of the second end 41 of the reaction chamber 20 in the second growth direction by the third heater 26; step S4: the temperature distribution of the second end 41 of the reaction chamber 20 in the first growth direction is controlled by the fourth heater 27.
And the heating power ratio of the first heater 25, the second heater 24, the third heater 26 and the fourth heater 27 is (0-3): (0-4): (0-5): (5-8).
Since the first heater 25 is disposed above the first end 40 where the target 22 is located, the temperature field in the first growth direction of the target 22 can be controlled by the first heater 25, the isotherm of the growth interface of the target 22 can be adjusted as needed, a flat or slightly convex growth interface of the target 22 is obtained, and the quality of the obtained target 22 is improved.
Moreover, since the second heater 24 and the third heater 26 are disposed around the first end 40, the second heater 24 and the third heater 26 at least have heat radiation surfaces distributed along the second growth direction of the target 22, and the heating powers of the second heater 24 and the third heater 26 can be independently controlled, the temperature gradient of the reaction chamber 20 in the second growth direction can be controlled by the second heater 24 and the third heater 26, so as to accelerate the reaction gas transportation speed and improve the growth speed of the target 22.
Moreover, since the fourth heater 27 is disposed below the second end 41, the temperature of the second end 41 can be controlled by the fourth heater 27 to provide a sufficient temperature for the reaction material placed at the second end 41, thereby accelerating the growth rate of the target 22.
Moreover, due to the more controllable temperature field environment, as the radial dimensions of the induction coil and the reaction chamber 20 increase, the temperature distribution in the first growth direction of the growth interface of the target 22 can also be kept uniform, which is beneficial for preparing high-quality large-diameter targets 22, such as large-diameter targets 22 with radial dimensions of more than 150 mm.
The above embodiments are merely examples of the present application, and not intended to limit the scope of the present application, and all equivalent structures or equivalent flow transformations made by the present specification and drawings, such as mutual combination of technical features between various embodiments, or direct or indirect application to other related technical fields, are all included in the scope of the present application.

Claims (10)

1. A semiconductor processing apparatus for preparing a target, comprising:
a reaction chamber including a first end and a second end sequentially arranged in an axial direction of the reaction chamber, and the target being formed at the first end;
a heating module comprising:
a first heater disposed above the first end and having at least a heat radiation surface distributed along a first growth direction of the target;
the second heater is arranged on the side surface of the first end and at least provided with a heat radiation surface distributed along the second growth direction of the target object, and the top of the second heater is higher than the plane where the first end of the reaction chamber is located or is flush with the plane where the first end of the reaction chamber is located;
the third heater is arranged below the second end and at least provided with a heat radiation surface distributed along the second growth direction of the target object, and the bottom of the third heater is lower than the plane where the second end of the reaction chamber is located or is flush with the plane where the second end of the reaction chamber is located;
a fourth heater provided at the second end side surface and having at least a heat radiation surface distributed along the first growth direction of the target;
the heating powers of the first heater, the second heater, the third heater and the fourth heater are mutually independent.
2. The semiconductor processing apparatus according to claim 1, wherein a projection of the heat radiation surface of the first heater on a plane on which the first end is located has an outer contour shape matching a shape of the first end, and a projection of the heat radiation surface of the first heater on a plane on which the first end is located at least partially covers the first end of the reaction chamber;
the projection of the heat radiation surface of the fourth heater on the plane of the second end at least partially covers the second end of the reaction chamber.
3. The semiconductor processing apparatus of claim 1 or 2, wherein the reaction chamber comprises a cylindrical chamber body and a circular top cover, wherein the first heater and the fourth heater are each in the shape of a disk, the second heater and the third heater are each in the shape of a cylinder, and the second heater and the third heater surround the chamber body, and the first heater and the fourth heater are respectively disposed above the top cover and below the bottom of the chamber body.
4. The semiconductor processing apparatus according to claim 1, wherein a length of the heat radiation face of the second heater in the axial direction of the reaction chamber is smaller than a length of the heat radiation face of the third heater in the axial direction of the reaction chamber.
5. The semiconductor processing apparatus according to claim 1, wherein a distance from the first end to a heat radiation surface of the first heater is greater than or equal to a distance from the second end to a heat radiation surface of the fourth heater.
6. The semiconductor processing apparatus of claim 1, wherein a gap exists between the second heater and the third heater, and the gap has a size in a range of 15mm to 30 mm.
7. The semiconductor processing apparatus of claim 1, wherein the first heater is further provided with a first through hole penetrating the first heater and exposing a first end of the reaction chamber, and/or:
the fourth heater is provided with a second through hole which penetrates through the fourth heater and exposes the second end of the reaction chamber.
8. The semiconductor processing apparatus of claim 1, further comprising a power control module connected to the heating modules for individually controlling heating power of each heater in the heating modules.
9. A heating method for target growth using the semiconductor processing apparatus of any one of claims 1 to 8, the target growth being at a first end of the reaction chamber, the heating method comprising:
controlling a temperature distribution of the first end of the reaction chamber in a first growth direction of the target by the first heater;
controlling the temperature distribution of the side surface of the first end of the reaction chamber in the second growth direction of the target object through the second heater;
controlling the temperature distribution of the side surface of the second end of the reaction chamber in the second growth direction through the third heater;
and controlling the temperature distribution of the second end of the reaction chamber in the first growth direction through the fourth heater.
10. The heating method according to claim 9, wherein a heating power ratio of the first heater, the second heater, the third heater and the fourth heater is (0-3): (0-4): (0-5): (5-8).
CN202210090120.XA 2022-01-25 2022-01-25 Semiconductor processing apparatus and heating method for target growth Pending CN114481324A (en)

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Publication number Priority date Publication date Assignee Title
JP2008290885A (en) * 2007-05-22 2008-12-04 Denso Corp Apparatus and method for producing silicon carbide single crystal
CN102245813A (en) * 2008-12-08 2011-11-16 Ii-Vi有限公司 Improved axial gradient transport (AGT) growth process and apparatus utilizing resistive heating
CN107075727A (en) * 2014-11-25 2017-08-18 住友电气工业株式会社 The manufacture method of single-crystal silicon carbide
CN108495957A (en) * 2016-02-09 2018-09-04 住友电气工业株式会社 Single-crystal silicon carbide substrate
CN111793825A (en) * 2020-07-27 2020-10-20 河北同光科技发展有限公司 Preparation device and method of low-defect-density SiC single crystal
CN113652740A (en) * 2021-08-27 2021-11-16 宁波合盛新材料有限公司 Preparation method of silicon carbide single crystal, single crystal growing furnace and heating device of single crystal growing furnace

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008290885A (en) * 2007-05-22 2008-12-04 Denso Corp Apparatus and method for producing silicon carbide single crystal
CN102245813A (en) * 2008-12-08 2011-11-16 Ii-Vi有限公司 Improved axial gradient transport (AGT) growth process and apparatus utilizing resistive heating
CN107075727A (en) * 2014-11-25 2017-08-18 住友电气工业株式会社 The manufacture method of single-crystal silicon carbide
CN108495957A (en) * 2016-02-09 2018-09-04 住友电气工业株式会社 Single-crystal silicon carbide substrate
CN111793825A (en) * 2020-07-27 2020-10-20 河北同光科技发展有限公司 Preparation device and method of low-defect-density SiC single crystal
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