CN114477079A - Integrated Fabry-Perot MEMS acceleration sensitive chip processing method - Google Patents
Integrated Fabry-Perot MEMS acceleration sensitive chip processing method Download PDFInfo
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- CN114477079A CN114477079A CN202210096468.XA CN202210096468A CN114477079A CN 114477079 A CN114477079 A CN 114477079A CN 202210096468 A CN202210096468 A CN 202210096468A CN 114477079 A CN114477079 A CN 114477079A
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- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
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- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81B2201/00—Specific applications of microelectromechanical systems
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Abstract
The invention discloses a method for processing an integrated Fabry-Perot MEMS acceleration sensitive chip, which comprises the following steps: firstly, a cavity depth reference groove is manufactured through wet etching, a cavity is etched on a silicon wafer by taking the groove as a reference, and silicon oxide and silicon nitride films are repeatedly and alternately deposited on the surface of the cavity to manufacture an optical reflection increasing film; then, repeatedly and alternately depositing silicon oxide films and silicon nitride films on the surface of the glass wafer, and patterning to form an optical reflection increasing film; then, carrying out anodic bonding on the silicon and the glass wafer, and thinning the silicon wafer to a target thickness; and finally, releasing the spring mass structure by adopting a deep reactive ion etching technology. The method can avoid the problem that the sensitive chip is deformed or damaged due to residual stress existing in the prior art after etching and bonding, and has the advantages of simple process and high yield; in addition, the step of cavity depth reference groove is benefited, and the manufactured sensitive chip can be ensured to work in a high-sensitivity state.
Description
Technical Field
The invention relates to the technical field of micro-electromechanical systems, in particular to a method for processing an integrated Fabry-Perot MEMS acceleration sensitive chip.
Background
MEMS acceleration sensor is widely used in the fields of robots, unmanned aerial vehicles, intelligent automobiles, electronic consumer products and the like due to the advantages of high precision, small volume, low power consumption, low cost and convenience for mass production. At present, common MEMS acceleration sensors can be classified into capacitance, resonance, piezoresistive, optical, and the like according to their detection modes. The MEMS acceleration sensor based on the optical interference principle combines the characteristics of ultrahigh displacement resolution of optical detection and small volume and low power consumption of the MEMS technology, and has wide application prospect.
The processing technology of the MEMS acceleration sensor sensitive chip based on the Fabry-Perot cavity is a big difficulty in the development process of the integrated optical MEMS acceleration sensor, and the process flow generally comprises key steps of optical coating, functional structure manufacturing, cavity forming and the like. Of the above process steps, three points need special attention: 1. optical coating generally needs to be alternately and repeatedly manufactured with a plurality of layers of thin films, the thickness of a single layer of the thin film is generally in the hundred nanometer level, the thickness of the thin film directly determines the reflectivity of a Fabry-Perot cavity, and the sensitivity of an acceleration sensor is further influenced, so that the growth rate of the thin film needs to be accurately controlled in the coating process to control the thickness of the thin film; 2. in order to ensure that the sensitivity of the acceleration sensor is improved, the main frequency of a spring mass structure is generally designed to be lower, and the specific structure is characterized in that a supporting beam is long and thin, and an inertia mass block is large and thick, so that the structure is generally fragile and easy to damage in the process; 3. the fabry-perot cavity formed by final bonding requires that the parallelism between the movable mirror and the fixed mirror is high, otherwise the output consistency of the acceleration sensor is affected, and the parallelism of the cavity is usually ensured by optimizing the design of the spring mass structure and the bonding process.
The processing flow of the currently reported technologies, for example, the fabry-perot optical MEMS acceleration sensitive chip disclosed in chinese patents CN201911213113.9 and CN202011125893.4, is as follows: firstly, an optical reflection increasing film or an anti-reflection film is manufactured on the surface of a wafer through the technologies of magnetron sputtering, electron beam evaporation or vapor deposition and the like to adjust the reflectivity of a Fabry-Perot cavity, then the steps of glue homogenizing, photoetching, developing, etching and the like are sequentially carried out on another wafer according to the specific characteristics of a spring mass structure to complete the processing of a functional structure, and finally the released spring mass structure and the wafer manufactured with the optical reflection increasing film or the anti-reflection film are fixed together by utilizing the direct bonding of silicon and silicon, the anodic bonding of silicon and glass or the gluing technology to form the Fabry-Perot cavity, so that the preparation of the sensitive chip of the Fabry-Perot MEMS acceleration sensor is completed. Although the processing of the fabry-perot MEMS acceleration sensitive chip can be completed according to the above process steps, since the spring mass structure is released when the final bonding process is performed, the spring mass structure may generate stress due to the high temperature and the applied mechanical pressure during the bonding process, which may cause the structure to deform or even damage, and the process is difficult to operate, and the spring mass structure is easily damaged. In addition, the neutral surfaces of the supporting beam and the mass block of the spring mass structure processed by the process are not in the same plane, so that the parallelism of the cavity of the finally manufactured sensitive chip is deteriorated when the sensitive chip is subjected to lateral acceleration, and the output of the sensor is influenced.
Disclosure of Invention
The invention aims to provide a method for processing an integrated Fabry-Perot MEMS acceleration sensitive chip, which aims to overcome the problem that the sensitive chip is deformed or damaged due to residual stress existing in the processes of etching and bonding in the prior art, has the advantages of simple process and high yield, and can ensure the consistency of the cavity length of a finally manufactured Fabry-Perot cavity and a design value so as to ensure that a sensor is in a high-sensitivity working state.
In order to achieve the purpose, the invention adopts the following technical scheme:
a processing method of an integrated Fabry-Perot MEMS acceleration sensitive chip comprises the following steps:
(1) cleaning a silicon wafer, and removing an oxidation film and surface impurities;
(2) etching the silicon wafer cleaned in the step (1) by using an anisotropic wet etching technology of silicon to manufacture a cavity depth reference groove;
(3) depositing a silicon nitride film on the surface of the depth reference groove manufactured in the step (2) by using a low-pressure chemical vapor deposition method, and patterning the silicon nitride film by using a reactive ion etching technology;
(4) taking the silicon nitride film patterned in the step (3) as a mask, etching the silicon cavity by utilizing a deep reactive ion etching technology, and stopping etching when the etching depth reaches the bottom of the depth reference groove so as to accurately control the etching depth of the cavity;
(5) depositing a multilayer reflection increasing film on the surface of the silicon cavity manufactured in the step (4) by using a low-pressure chemical vapor deposition method;
(6) step-by-step patterning the multilayer reflection increasing film deposited in the step (5) by utilizing a reactive ion etching technology and a wet etching technology;
(7) cleaning a glass wafer to remove surface impurities;
(8) depositing a plurality of reflection increasing films on the surface of the glass wafer cleaned in the step (7) by using a low-pressure chemical vapor deposition method;
(9) patterning the multilayer reflection increasing film deposited through the step (8) by using a reactive ion etching technology;
(10) bonding the silicon cavity manufactured in the steps (1) to (6) and the glass wafer manufactured in the steps (7) to (9) together by using a silicon-glass anodic bonding technology to form a Fabry-Perot interference cavity;
(11) thinning the silicon wafer bonded in the step (10) to a target thickness by using a thinning process;
(12) and (5) etching the thinned silicon wafer in the step (11) by utilizing a deep reactive ion etching technology to form a spring mass structure in a graphical mode, and finishing the integrated processing of the Fabry-Perot MEMS acceleration sensitive chip.
Further, the etching depth reference groove manufactured by using the silicon anisotropic wet etching technology in the step (2) utilizes a 54.74-degree etching angle generated by different crystal orientation etching rates of silicon in the wet etching process, and through the design of the size of the etching masking window, the etching can be automatically stopped after the etching depth reaches a preset value, so that the depth reference can be provided for the subsequent cavity etching.
Further, the thickness of the silicon nitride film deposited on the surface of the depth reference groove in the step (3) is 200 nm.
Further, the multilayer reflection increasing film in the step (5) and the step (8) adopts a dielectric film or a metal film, and when the dielectric film is adopted, the deposition process adopts an alternate and repeated deposition mode to ensure that the manufactured multilayer thin film has an optical reflection increasing effect.
Further, the dielectric film employs two of silicon dioxide, silicon nitride, silicon monoxide, and magnesium fluoride.
Further, the metal film adopts aluminum or germanium.
Further, the deposition process of the multilayer reflection increasing film in the step (5) and the step (8) specifically comprises the following steps: and (3) alternately and repeatedly depositing a silicon dioxide film and a silicon nitride film, wherein 4 layers are co-deposited in the step (5), 6 layers are co-deposited in the step (8), the thickness of each layer of silicon dioxide film is 162nm, and the thickness of each layer of silicon nitride film is 117 nm.
Further, the step (6) of patterning the multilayer reflection-increasing film comprises the following steps: the first three layers of silicon nitride/silicon dioxide/silicon nitride adopt a reactive ion etching technology from top to bottom, and the last layer of silicon dioxide adopts a wet etching technology.
Further, the step (11) is to thin the silicon wafer bonded in the step (10) to 80 μm to 100 μm by using a thinning process.
Compared with the prior art, the invention has the following beneficial technical effects:
the invention adopts the process sequence of firstly bonding and then etching to release the spring mass structure, can avoid the problem that the sensitive chip is deformed or damaged due to various stresses existing in the prior art after the spring mass structure is firstly etched and released and then bonded, has the advantages of simple process and low operation difficulty, and has high parallelism of the manufactured cavity because bonding is carried out before etching and the surface appearance and the characteristic size of the silicon and glass wafers are good; in addition, the neutral surfaces of the support beam and the mass block of the spring mass structure processed by the invention are in the same plane, so that the cavity of the sensitive chip can still keep high parallelism when the sensitive chip is subjected to lateral acceleration, and the cross sensitivity of the sensor is low. Meanwhile, the etching depth reference groove manufactured by using the silicon anisotropic wet etching technology in the process flow can provide depth reference for the subsequent dry etching step of the cavity, so that the consistency of the cavity length of the finally manufactured Fabry-Perot cavity and a design value is ensured, and the sensor is ensured to be in a high-sensitivity working state.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a flow chart of a processing method of an integrated fabry-perot MEMS acceleration sensitive chip according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be described in detail below. It is to be understood that the described embodiments are merely a few embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the examples given herein without any inventive step, are within the scope of the present invention.
The technical solution of the present invention will be described in detail with reference to the accompanying specific drawing 1.
(1) Preparing a silicon wafer, soaking the silicon wafer in acetone and alcohol solution for cleaning, and then soaking the silicon wafer in sulfuric acid/hydrogen peroxide solution for cleaning so as to remove an oxidation film, metal ions and other impurities.
(2) Etching the silicon wafer cleaned in the step (1) by using an anisotropic wet etching technology of silicon to manufacture a cavity depth reference groove;
(3) depositing a silicon nitride film on the surface of the depth reference groove manufactured in the step (2) by using a low-pressure chemical vapor deposition (LPCVD) system, wherein the deposition thickness is 200nm, and patterning the silicon nitride film by using a Reactive Ion Etching (RIE) technology to manufacture a mask of dry etching;
(4) taking the silicon nitride film patterned in the step (3) as a mask, and etching the cavity by utilizing a deep reactive ion etching technology; the etching process adopts a staged etching method, namely, etching for a short time to determine the etching rate of the current parameter, then etching for a long time at the rate until the etching rate is about 10 mu m away from the target depth, finally, comparing the etching rate with a depth reference groove during etching, and stopping etching when the etching depth reaches the bottom of the depth reference groove so as to achieve the accurate control of the etching depth of the cavity;
(5) alternately and repeatedly depositing a silicon dioxide (162nm) and silicon nitride (117nm) multilayer film (four layers in total) on the surface of the cavity formed by etching in the step (4) by using a low-pressure chemical vapor deposition (LPCVD) system to manufacture an antireflection film of a movable reflector (the surface of the spring mass structure), wherein the reflectivity of the Fabry-Perot cavity to the laser with the wave band of 700-1000nm can reach about 70 percent by adopting the combined film;
(6) patterning the multilayer reflection increasing film deposited through the step (5) step by using a Reactive Ion Etching (RIE) technology and a wet etching technology; wherein, the first three layers (namely silicon nitride/silicon oxide/silicon nitride) adopt the reactive ion etching technology, and the last layer of silicon dioxide adopts BOE solution to carry out wet etching; the dry-wet combined process can ensure that silicon of a device layer cannot be damaged in the process of patterning the reflection increasing film, and only the reflection increasing film on the upper surface area of the inertia mass block structure is reserved after etching is finished.
(7) Preparing 4-inch BF33 anodic bonding glass, and then soaking the anodic bonding glass in acetone and alcohol solution for cleaning;
(8) a low-pressure chemical vapor deposition (LPCVD) system is used for alternately and repeatedly depositing a silicon dioxide (162nm) and silicon nitride (117nm) multilayer film (six layers in total) on the glass surface cleaned in the step (7) to manufacture a fixed reflector, and the combined film is adopted, so that the reflectivity of the Fabry-Perot cavity to the laser with the wave band of 700-1000nm reaches about 70 percent;
(9) patterning the multilayer reflection increasing film deposited in the step (8) by using a reactive ion etching technology (RIE), and only reserving the multilayer film in the area, which is the same as the area of the mass block, of the glass surface after etching is finished;
(10) bonding the silicon cavity manufactured in the steps (1) to (6) and the glass wafer manufactured in the steps (7) to (9) together by using a silicon-glass anodic bonding technology to form a Fabry-Perot interference cavity; care was taken in the alignment of the glass cavity wafer and the silicon cavity when bonding.
(11) And (4) thinning the silicon wafer bonded in the step (10) to 80-100 μm by using a thinning process.
(12) And (4) etching the thinned silicon wafer in the step (11) by using a Deep Reactive Ion Etching (DRIE) technology to form a patterned spring mass structure, and releasing the inertia mass block after the etching is finished.
In step (12), the pressure sensitive film, the MEMS micro-mirror, and the optical filter may be patterned.
The process flow adopts the process sequence of firstly bonding and then etching to release the spring mass structure, can avoid the problem that the sensitive chip is deformed or damaged due to various stresses existing in the prior art after the spring mass structure is firstly etched and released and then bonded, has the advantages of simple process and low operation difficulty, and has high parallelism of the manufactured cavity because bonding is carried out before etching and the surface appearance and the characteristic dimension of the silicon and glass wafers are good; in addition, the supporting beam of the spring mass structure processed by the technical scheme and the neutral plane of the mass block are in the same plane, so that the cavity of the sensitive chip still keeps high parallelism when the sensitive chip is subjected to lateral acceleration, and the cross sensitivity of the sensor is low. Meanwhile, the etching depth reference groove manufactured by using the silicon anisotropic wet etching technology in the process flow can provide depth reference for the subsequent dry etching step of the cavity, so that the consistency of the cavity length of the finally manufactured Fabry-Perot cavity and a design value is ensured, and the sensor is ensured to be in a high-sensitivity working state.
The above-mentioned contents are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical idea of the present invention falls within the protection scope of the claims of the present invention.
Claims (8)
1. A processing method of an integrated Fabry-Perot MEMS acceleration sensitive chip is characterized by comprising the following steps:
(1) cleaning a silicon wafer, and removing an oxidation film and surface impurities;
(2) etching the silicon wafer cleaned in the step (1) by using an anisotropic wet etching technology of silicon to manufacture a cavity depth reference groove;
(3) depositing a silicon nitride film on the surface of the depth reference groove manufactured in the step (2) by using a low-pressure chemical vapor deposition method, and patterning the silicon nitride film by using a reactive ion etching technology;
(4) taking the silicon nitride film patterned in the step (3) as a mask, etching the silicon cavity by utilizing a deep reactive ion etching technology, and stopping etching when the etching depth reaches the bottom of the depth reference groove;
(5) depositing a plurality of reflection increasing films on the surface of the silicon cavity manufactured in the step (4) by using a low-pressure chemical vapor deposition method;
(6) step-by-step patterning the multilayer reflection increasing film deposited in the step (5) by utilizing a reactive ion etching technology and a wet etching technology;
(7) cleaning a glass wafer to remove surface impurities;
(8) depositing a plurality of reflection increasing films on the surface of the glass wafer cleaned in the step (7) by using a low-pressure chemical vapor deposition method;
(9) patterning the multilayer reflection increasing film deposited through the step (8) by using a reactive ion etching technology;
(10) bonding the silicon cavity manufactured in the steps (1) to (6) and the glass wafer manufactured in the steps (7) to (9) together by using a silicon-glass anodic bonding technology to form a Fabry-Perot interference cavity;
(11) thinning the silicon wafer bonded in the step (10) to a target thickness by using a thinning process;
(12) and (4) etching the silicon wafer thinned in the step (11) by utilizing a deep reactive ion etching technology to form a spring mass structure in a graphical mode, and finishing the integrated processing of the Fabry-Perot MEMS acceleration sensitive chip.
2. The method as claimed in claim 1, wherein the silicon nitride film deposited on the surface of the depth reference trench in step (3) has a thickness of 200 nm.
3. The method as claimed in claim 1, wherein the multilayer reflection increasing film in steps (5) and (8) is a dielectric film or a metal film, and when the dielectric film is used, the deposition process is performed by alternately repeating the deposition.
4. The method as claimed in claim 3, wherein the dielectric film is selected from silicon dioxide, silicon nitride, silicon monoxide and magnesium fluoride.
5. The method as claimed in claim 3, wherein the metal film is made of aluminum or germanium.
6. The processing method of the integrated fabry-perot MEMS acceleration sensitive chip according to claim 1, wherein the deposition process of the multilayer reflection increasing film in the steps (5) and (8) is specifically: and (3) alternately and repeatedly depositing a silicon dioxide film and a silicon nitride film, wherein 4 layers are co-deposited in the step (5), 6 layers are co-deposited in the step (8), the thickness of each layer of silicon dioxide film is 162nm, and the thickness of each layer of silicon nitride film is 117 nm.
7. The method as claimed in claim 6, wherein the step (6) of patterning the multilayer reflection-enhanced film comprises: the first three layers of silicon nitride/silicon dioxide/silicon nitride adopt a reactive ion etching technology from top to bottom, and the last layer of silicon dioxide adopts a wet etching technology.
8. The method for processing the integrated fabry-perot MEMS acceleration-sensitive chip according to claim 1, characterized in that in the step (11), the silicon wafer bonded in the step (10) is thinned to 80 μm-100 μm by using a thinning process.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117003197A (en) * | 2023-09-26 | 2023-11-07 | 之江实验室 | Preparation method of high-temperature inertial chip capable of being integrated on crystal and provided with vertical Fabry-Perot cavity |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117003197A (en) * | 2023-09-26 | 2023-11-07 | 之江实验室 | Preparation method of high-temperature inertial chip capable of being integrated on crystal and provided with vertical Fabry-Perot cavity |
| CN117003197B (en) * | 2023-09-26 | 2024-03-26 | 之江实验室 | Preparation method of high-temperature inertial chip capable of being integrated on crystal and provided with vertical Fabry-Perot cavity |
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