CN114455587A - High-purity polycrystalline silicon production device and method - Google Patents
High-purity polycrystalline silicon production device and method Download PDFInfo
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- CN114455587A CN114455587A CN202210094768.4A CN202210094768A CN114455587A CN 114455587 A CN114455587 A CN 114455587A CN 202210094768 A CN202210094768 A CN 202210094768A CN 114455587 A CN114455587 A CN 114455587A
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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Abstract
In order to overcome the problems of temperature difference and limited growth thickness of polycrystalline silicon in the process of heating a silicon rod by electrifying an improved Siemens method, the invention provides a high-purity polycrystalline silicon production device, which comprises a chassis, at least one silicon core, a first cylindrical electrode plate, a second cylindrical electrode plate, at least one plasma heater and a driving assembly, wherein the chassis is arranged between the first cylindrical electrode plate and the second cylindrical electrode plate, the chassis is provided with at least one clamping groove, and the silicon core is arranged in the clamping groove; the plasma heater is used for jetting high-temperature plasma gas carrying silicon source gas, the plasma heater is arranged on the driving assembly, and the driving assembly is used for driving the plasma heater to rotate by taking the central shaft of the chassis as an axis. Meanwhile, the invention also provides a polycrystalline silicon production method, and the polycrystalline silicon production method and the device provided by the invention overcome the disadvantage of temperature difference existing in the electrified heating of the silicon rod and get rid of the limitation of the growth thickness of the polycrystalline silicon.
Description
Technical Field
The invention belongs to the technical field of polycrystalline silicon preparation, and particularly relates to a device and a method for producing high-purity polycrystalline silicon.
Background
Polycrystalline silicon is an important raw material of high-tech products and is widely applied to semiconductor and photovoltaic industries. Currently, the industrial production methods of polycrystalline silicon mainly include an improved siemens method, a silane method and a gas-liquid deposition method. The core process is that trichlorosilane and hydrogen are introduced into a bell-jar type polycrystalline silicon reduction furnace, and silicon cores/silicon rod surfaces which are electrified and heated to about 1100 ℃ react and deposit to grow the polycrystalline silicon rods. Due to thermodynamic limitations, the temperature difference between the surface and the center of the silicon rod increases as the diameter of the silicon rod increases. In order to maintain the surface temperature of the silicon rod at a reaction temperature of 1100 ℃, the temperature of the center of the silicon rod must be much higher than 1100 ℃, and as the diameter of the silicon rod increases, when the temperature of the center of the silicon rod reaches the melting point of 1410 ℃, the silicon rod has to be blown out. The method directly limits the upper limit of the growth thickness of the polysilicon on the silicon rod, influences the polysilicon yield and brings potential risks to production.
Disclosure of Invention
The invention provides a method and a system for producing high-purity polycrystalline silicon, aiming at the problems of temperature difference and limited growth thickness of polycrystalline silicon in the conventional improved Siemens method silicon rod electrifying heating.
The technical scheme adopted by the invention for solving the technical problems is as follows:
on one hand, the invention provides a high-purity polycrystalline silicon production device which comprises a chassis, at least one silicon core, a first cylindrical electrode plate, a second cylindrical electrode plate, at least one plasma heater and a driving assembly, wherein the chassis is arranged between the first cylindrical electrode plate and the second cylindrical electrode plate, at least one clamping groove is formed in the chassis, and the silicon core is arranged in the clamping groove; the plasma heater is used for jetting high-temperature plasma gas carrying silicon source gas, the plasma heater is arranged on the driving assembly, and the driving assembly is used for driving the plasma heater to rotate by taking the central shaft of the chassis as an axis.
Optionally, the driving assembly comprises a rotating motor and a rotating disc, and the rotating motor is connected with the rotating disc; the rotating disk is arranged above the chassis, and the plasma heater is arranged on the rotating disk.
Optionally, a clamping groove is formed in the chassis, and the rotating disc drives the plasma heater to rotate for a circle by taking the central shaft of the chassis as an axis and the silicon core as a starting point.
Optionally, a plurality of clamping grooves are formed in the chassis, and are arranged at intervals along the radial direction of the chassis; the plasma heating device is characterized in that a plurality of plasma heaters are arranged on the rotating disc at intervals along the radial direction of the rotating disc, the plasma heaters are arranged on one side of the clamping grooves in a one-to-one correspondence mode, and the rotating disc drives the plasma heaters to rotate for a circle by taking the central shaft of the chassis as an axis and the corresponding silicon core as a starting point.
Optionally, a plurality of clamping grooves are formed in the chassis and are arranged at intervals along the circumferential direction of the chassis; the plasma heating device is characterized in that a plurality of plasma heaters are arranged on the rotating disc at intervals along the circumferential direction of the rotating disc, the plasma heaters are arranged on one side of the clamping grooves in a one-to-one correspondence mode, the rotating disc drives the plasma heaters to rotate to the adjacent silicon core by taking the central shaft of the chassis as an axis and taking one silicon core as a starting point.
Optionally, a plurality of clamping grooves are formed in the base plate, and the plurality of clamping grooves are arranged at intervals in the circumferential direction and the radial direction of the base plate respectively. The plasma heating device is characterized in that a plurality of plasma heaters are arranged on the rotating disc, the plasma heaters are arranged at intervals in the circumferential direction and the radial direction of the rotating disc respectively, and the plasma heaters are arranged on one side of the clamping grooves in a one-to-one correspondence mode.
Optionally, the plasma heater includes an air inlet chamber, a plasma generation chamber, and an exit chamber, the air inlet chamber is communicated with the plasma generation chamber, the plasma generation chamber is communicated with the exit chamber, the exit chamber is provided with a jet orifice, and the jet orifice is disposed on one side of the exit chamber facing the silicon core.
Optionally, the chassis is annular, the chassis cover is established first cylindrical electrode board periphery, second cylindrical electrode board cover is established the chassis periphery.
In another aspect, the present invention provides a method for producing high purity polycrystalline silicon, which is applied to the high purity polycrystalline silicon production apparatus described in any one of the above, comprising the steps of:
a silicon core is placed on a chassis, and a driving assembly drives a plasma heater to rotate to one side of the silicon core;
the plasma heater sprays high-temperature plasma gas carrying silicon source gas to the surface of the silicon core, and silicon crystals grow on the surface of the silicon core;
the driving assembly drives the plasma heater to rotate by taking the central shaft of the chassis as an axis, polycrystalline silicon is formed in the area where the high-temperature plasma gas carrying the silicon source gas is located to generate a local reaction area, and a cylindrical silicon growth base is generated in the local reaction area;
the plasma heater moves out of the space between the first cylindrical electrode plate and the second cylindrical electrode plate, the first cylindrical electrode plate and the second cylindrical electrode plate are electrified, the cylindrical silicon growth base is used as a dielectric to be heated, silicon source gas is introduced between the first cylindrical electrode plate and the second cylindrical electrode plate, and the cylindrical silicon growth base extends in the direction of the first cylindrical electrode plate and/or the second cylindrical electrode plate to deposit and grow polycrystalline silicon, so that cylindrical silicon is obtained.
Optionally, a plurality of clamping grooves are formed in the chassis, and when the number of the plasma heaters is multiple, the plurality of clamping grooves are arranged at intervals along the radial direction of the chassis; the driving component drives the plurality of plasma heaters to rotate by taking the central shaft of the chassis as an axis and the corresponding silicon core as a starting point, and the cylindrical silicon growth bases generated in the local reaction zone are arranged at intervals by taking the central shaft of the chassis as an axis;
and/or the clamping grooves are arranged at intervals along the circumferential direction of the chassis; the driving component drives the plurality of plasma heaters to rotate from one side of one silicon core to one side of an adjacent silicon core by taking the central shaft of the chassis as an axis.
According to the high-purity polycrystalline silicon production device and the high-purity polycrystalline silicon production method, the plasma heater is driven to rotate through the driving assembly, and meanwhile, high-temperature plasma gas carrying silicon source gas is sprayed, so that the growth direction of polycrystalline silicon is controlled. A high-frequency alternating current power supply is introduced into the first cylindrical electrode plate and the second cylindrical electrode plate, a high-frequency electric field is formed between the first cylindrical electrode plate and the second cylindrical electrode plate, and cylindrical silicon growth substrates arranged between the first cylindrical electrode plate and the second cylindrical electrode plate serve as dielectrics to be rapidly and uniformly heated. The method has the advantages that a dielectric heating mode with uniform heating and easy control is adopted, the defect that temperature difference exists in the process of electrifying and heating the silicon rod by the improved Siemens method is overcome, the limitation of the growth thickness of polycrystalline silicon is eliminated, the potential production risk of fusing the polycrystalline silicon is reduced, the response speed is high, and the temperature is easy to control. Meanwhile, the driving assembly drives the plasma heater to rotate by taking the central shaft of the chassis as an axis, the plasma heater sprays high-temperature plasma gas carrying silicon source gas to form a local reaction zone, so that a cylindrical silicon growth base is obtained, the cylindrical silicon growth base replaces a silicon rod type growth method, the area of the growth reaction zone is increased, the growth speed of polycrystalline silicon is accelerated, and the productivity is improved.
Drawings
FIG. 1 is a schematic structural view of a high purity polycrystalline silicon production apparatus provided by the present invention;
FIG. 2 is a schematic view of a high purity polysilicon production apparatus in which the cylindrical silicon growth radicals provided by the present invention are formed;
FIG. 3 is a schematic structural view of a high purity polycrystalline silicon production apparatus in the formation of columnar silicon provided by the present invention;
FIG. 4 is a schematic structural view of a plasma heater of the high purity polycrystalline silicon production apparatus provided by the present invention;
FIG. 5 is a schematic top view of a silicon column generation stage in a high purity polysilicon production apparatus provided by an embodiment of the present invention with a silicon core installed;
fig. 6 is a schematic plan view of a columnar silicon generation stage in the case where silicon cores are arranged at intervals in the circumferential direction of a base plate in a high purity polycrystalline silicon production apparatus according to another embodiment of the present invention;
FIG. 7 is a schematic top view of a cylindrical silicon generation stage in a high purity polysilicon production apparatus according to another embodiment of the present invention, in which silicon cores are spaced apart in the radial direction of a base plate;
fig. 8 is a schematic plan view of a columnar silicon generation stage in the case where silicon cores are provided at intervals in both the circumferential direction and the radial direction of a base plate in a high purity polycrystalline silicon production apparatus according to another embodiment of the present invention.
The reference numbers in the drawings of the specification are as follows:
1. a chassis; 11. a card slot;
2. a silicon core;
3. a first cylindrical electrode plate;
4. a second cylindrical electrode plate;
5. a plasma heater; 51. an air intake chamber; 52. a plasma generation chamber; 53. an exit chamber;
6. rotating the disc;
7. a cylindrical silicon growth base;
8. and (3) columnar silicon.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it is to be understood that the terms "central," "upper," "lower," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for the purpose of convenience and simplicity of description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting.
In the description of the present invention, "a plurality" means two or more unless otherwise specified.
As shown in fig. 1 to 4, the present invention provides a high purity polysilicon production apparatus, comprising a base plate 1, at least one silicon core 2, a first cylindrical electrode plate 3, a second cylindrical electrode plate 4, at least one plasma heater 5 and a driving assembly, wherein the base plate 1 is disposed between the first cylindrical electrode plate 3 and the second cylindrical electrode plate 4. The chassis 1 is provided with at least one clamping groove 11, and the silicon core 2 is arranged in the clamping groove 11. The plasma heater 5 is used for jetting high-temperature plasma gas carrying silicon source gas, the plasma heater 5 is arranged on the driving assembly, and the driving assembly is used for driving the plasma heater 5 to rotate by taking the central shaft of the chassis 1 as an axis. Specifically, the silicon core 2 may be a circular or polygonal silicon core 2, and the plasma heater 5 may generate the high-temperature plasma gas by using inductive coupling, laser ionization, microwave ionization, or arc discharge. The silicon source gas comprises one or more of monosilane, chlorosilane, dichlorosilane, trichlorosilane and silicon tetrachloride. The first cylindrical electrode plate 3 and the second cylindrical electrode plate 4 are made of metal, alloy or polymer conductive material.
In this embodiment, the driving assembly drives the plasma heater 5 to rotate, and simultaneously injects the high-temperature plasma gas carrying the silicon source gas, thereby controlling the growth direction of the polysilicon. By introducing a high-frequency alternating-current power supply to the first cylindrical electrode plate 3 and the second cylindrical electrode plate 4, a high-frequency electric field is formed between the first cylindrical electrode plate 3 and the second cylindrical electrode plate 4, and the cylindrical silicon growth substrate 7 placed between the first cylindrical electrode plate 3 and the second cylindrical electrode plate 4 is used as a dielectric medium to be rapidly and uniformly heated. The method has the advantages that a dielectric heating mode with uniform heating and easy control is adopted, the defect that temperature difference exists in the process of electrifying and heating the silicon rod by the improved Siemens method is overcome, the limitation of the growth thickness of polycrystalline silicon is eliminated, the potential production risk of fusing the polycrystalline silicon is reduced, the response speed is high, and the temperature is easy to control. Meanwhile, the driving assembly drives the plasma heater 5 to rotate by taking the central shaft of the chassis 1 as an axis, the plasma heater 5 sprays high-temperature plasma gas carrying silicon source gas to form a local reaction zone, so that the cylindrical silicon growth substrate 7 is obtained, the cylindrical silicon growth substrate 7 replaces a silicon rod type growth method, the area of the growth reaction zone is increased, the formation speed of the cylindrical silicon 8 is increased, and the productivity is improved.
Further, in some embodiments, the card slot 11 is a circular or polygonal silicon core 2.
As shown in fig. 1-4, in some embodiments, the drive assembly includes a rotary motor and a rotary disk 6, the rotary motor being coupled to the rotary disk 6. The rotating disc 6 is arranged above the chassis 1, the plasma heater 5 is arranged on the rotating disc 6, and the rotating motor drives the rotating disc 6 to rotate so as to drive the plasma heater 5 to rotate.
As shown in fig. 5, in some embodiments, a clamping groove 11 is disposed on the chassis 1, the driving component drives the plasma heater 5 to rotate once with the central axis of the chassis 1 as an axis and the silicon core 2 as a starting point, so as to form a single cylindrical silicon growth base 7, and the polysilicon grows in an extending manner towards the inner side and the outer side of the cylindrical silicon growth base 7, so as to increase the area of the growth reaction zone.
As shown in fig. 7, in some embodiments, a plurality of card slots 11 are disposed on the chassis 1, and the plurality of card slots 11 are spaced along a radial direction of the chassis 1. The rotary disc 6 is provided with a plurality of plasma heaters 5, the plurality of plasma heaters 5 are arranged at intervals along the radial direction of the rotary disc 6, the plurality of plasma heaters 5 are arranged on one side of the plurality of clamping grooves 11 in a one-to-one correspondence manner, the rotary disc 6 drives the plurality of plasma heaters 5 to rotate for a circle by taking the central shaft of the chassis 1 as an axis and the corresponding silicon core 2 as a starting point, so that a plurality of layers of cylindrical silicon growth bases 7 arranged at intervals are formed, the area of a growth reaction zone is increased, the plurality of layers of cylindrical silicon growth bases 7 grow synchronously, the growth speed of polycrystalline silicon is accelerated, the time for forming the cylindrical silicon 8 is shortened, and the production efficiency is improved.
As shown in fig. 6, in some embodiments, a plurality of card slots 11 are provided on the chassis 1, and the plurality of card slots 11 are arranged at intervals along the circumferential direction of the chassis 1. The rotating disc 6 is provided with a plurality of plasma heaters 5, the plurality of plasma heaters 5 are arranged at intervals along the circumferential direction of the rotating disc 6, the plurality of plasma heaters 5 are arranged on one side of the plurality of clamping grooves 11 in a one-to-one correspondence manner, and the rotating disc 6 drives the plurality of plasma heaters 5 to rotate to the adjacent silicon core 2 by taking the central shaft of the chassis 1 as an axis and taking one silicon core 2 as a starting point. The silicon cores 2 are arranged at intervals along the circumferential direction of the chassis 1, so that the time for forming the cylindrical silicon growth substrate 7 is saved, and the production efficiency is improved.
As shown in fig. 8, in some embodiments, a plurality of slots 11 are disposed on the chassis 1, and the plurality of slots 11 are spaced in the circumferential direction and the radial direction of the chassis 1, respectively. The rotary disc 6 is provided with a plurality of plasma heaters 5, the plasma heaters 5 are respectively arranged along the circumferential direction and the radial direction of the rotary disc 6 at intervals, and the plasma heaters 5 are arranged on one side of the clamping grooves 11 in a one-to-one correspondence manner. By arranging the silicon cores 2 in the circumferential direction and the radial direction of the chassis 1 at intervals, the forming efficiency of the cylindrical silicon growth substrate 7 and the forming efficiency of the cylindrical silicon 8 are improved, and the productivity is improved.
As shown in fig. 4, in some embodiments, the plasma heater 5 includes an inlet chamber 51, a plasma generation chamber 52 and an exit chamber 53, the inlet chamber 51 is communicated with the plasma generation chamber, the inlet chamber 51 is used for introducing a silicon source gas, a raw material gas and an auxiliary gas, the plasma generation chamber is communicated with the exit chamber 53, and the exit chamber 53 is provided with an injection port, and the injection port is disposed on one side of the exit chamber 53 facing the silicon core 2.
In the description of the present invention, the term "raw material gas" refers to a gas substance that can react with the silicon source gas to form silicon simple substance, and specifically, the "raw material gas" may be selected from conventional reducing gases, such as hydrogen, and when the silicon source gas is selected from the silicon source gas heated for self-decomposition, the "raw material gas" may be optionally not introduced, that is, a single silicon source gas may be introduced into the gas inlet chamber 51. The auxiliary gas is selected from conventional inert shielding gases, such as argon.
As shown in fig. 1, in some embodiments, the bottom plate 1 is ring-shaped, and the bottom plate 1 is made of silicon crystal. The chassis 1 is sleeved on the periphery of the first cylindrical electrode plate 3, and the second cylindrical electrode plate 4 is sleeved on the periphery of the chassis 1. The diameter of the first cylindrical electrode plate 3 is smaller than that of the inner ring of the chassis 1, and the diameter of the second cylindrical electrode plate 4 is larger than that of the outer ring of the chassis 1.
Another embodiment of the present invention provides a method for producing high purity polycrystalline silicon, which is applied to the apparatus for producing high purity polycrystalline silicon according to any one of the above embodiments, including the following steps:
a silicon core 2 is placed on a chassis 1, and a driving component drives a plasma heater 5 to rotate to one side of the silicon core.
The plasma heater 5 sprays high-temperature plasma gas carrying silicon source gas to the surface of the silicon core 2, and silicon crystals grow on the surface of the silicon core 2.
The driving assembly drives the plasma heater 5 to rotate by taking the central shaft of the chassis 1 as an axis, a polycrystalline silicon generation local reaction area is formed in the area where the high-temperature plasma gas carrying silicon source gas is located, and a cylindrical silicon growth base 7 is generated in the local reaction area.
The plasma heater 5 moves out from between the first cylindrical electrode plate 3 and the second cylindrical electrode plate 4, specifically, the plasma heater 5 is hinged with the rotating disk 6, and the plasma heater 5 is attached to the rotating disk 6. The first cylindrical electrode plate 3 and the second cylindrical electrode plate 4 are electrified, the cylindrical silicon growth base 7 is used as a dielectric medium to be heated, silicon source gas is introduced between the first cylindrical electrode plate 3 and the second cylindrical electrode plate 4, and the cylindrical silicon growth base 7 extends towards the first cylindrical electrode plate 3 and/or the second cylindrical electrode plate 4 to deposit and grow polycrystalline silicon to obtain cylindrical silicon 8.
In the embodiment, a dielectric heating mode with uniform and easily-controlled heating is adopted, the defect that the temperature difference exists in the process of electrifying and heating the silicon rod by the improved Siemens method is overcome, the limitation of the growth thickness of polycrystalline silicon is eliminated, the potential production risk of fusing the polycrystalline silicon is reduced, the response speed is high, and the temperature is easy to control. The cylindrical silicon growth substrate 7 extends to the first cylindrical electrode plate 3 and the second cylindrical electrode plate 4 to deposit and grow the polycrystalline silicon to obtain cylindrical silicon 8, the area of a growth reaction area is increased, the growth speed of the polycrystalline silicon is accelerated, and therefore the productivity of the polycrystalline silicon is improved.
In an embodiment, a plurality of slots 11 are disposed on the chassis 1, and when the plasma heater 5 is multiple, the plurality of slots 11 are disposed at intervals along a radial direction of the chassis 1. The driving component drives the plurality of plasma heaters 5 to rotate by taking the central shaft of the chassis 1 as an axis and the corresponding silicon core 2 as a starting point, and the cylindrical silicon growth bases 7 generated in the local reaction zone are arranged at intervals by taking the central shaft of the chassis 1 as an axis.
And/or a plurality of the clamping grooves 11 are arranged at intervals along the circumferential direction of the chassis 1. The driving component drives the plurality of plasma heaters 5 to rotate from one side of one silicon core 2 to one side of the adjacent silicon core 2 by taking the central shaft of the chassis 1 as an axis.
Specifically, as shown in fig. 6, two silicon cores 2 are disposed on the chassis 1, when two plasma heaters 5 are provided, the two silicon cores 2 are symmetrically disposed with respect to the circular center of the chassis 1, and when the two plasma heaters 5 inject the high-temperature plasma gas carrying the silicon source gas, the two silicon cores 2 simultaneously grow the silicon crystals along the circumference to form the cylindrical silicon growth substrate 7, thereby saving half of the time for forming the cylindrical silicon growth substrate 7 with respect to a single silicon core 2.
As shown in fig. 7, three silicon cores 2 are disposed on a chassis 1, when three plasma heaters 5 are provided, the three silicon cores 2 are disposed at intervals along the radial direction of the chassis 1, when the three plasma heaters 5 inject high-temperature plasma gas carrying silicon source gas, the three silicon cores 2 simultaneously grow silicon crystals along the circumference to form cylindrical silicon growth bases 7, three concentric cylindrical silicon growth bases 7 are formed, and when the cylindrical silicon growth bases 7 are heated as dielectrics to form cylindrical silicon 8, the forming speed of the cylindrical silicon 8 is increased by 2 to 3 times relative to that of a single silicon core 2.
As shown in fig. 8, when silicon cores 2 are disposed at intervals in both the circumferential direction and the radial direction of the base plate 1, a plurality of plasma heaters 5 are correspondingly disposed, and the formation efficiency of the cylindrical silicon growth substrate 7 and the formation efficiency of the cylindrical silicon 8 are improved, thereby improving the productivity.
The above description is intended to be illustrative of the preferred embodiment of the present invention and should not be taken as limiting the invention, but rather, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Claims (10)
1. A high-purity polycrystalline silicon production device is characterized by comprising a chassis, at least one silicon core, a first cylindrical electrode plate, a second cylindrical electrode plate, at least one plasma heater and a driving assembly, wherein the chassis is arranged between the first cylindrical electrode plate and the second cylindrical electrode plate, at least one clamping groove is formed in the chassis, and the silicon core is arranged in the clamping groove; the plasma heater is used for jetting high-temperature plasma gas carrying silicon source gas, the plasma heater is arranged on the driving assembly, and the driving assembly is used for driving the plasma heater to rotate by taking the central shaft of the chassis as an axis.
2. The apparatus for producing high purity polysilicon according to claim 1, wherein the driving assembly comprises a rotary motor and a rotary disk, the rotary motor being connected to the rotary disk; the rotating disk is arranged above the chassis, and the plasma heater is arranged on the rotating disk.
3. The apparatus for producing high purity polysilicon according to claim 2, wherein the chassis is provided with a slot, and the rotating disk drives the plasma heater to rotate one revolution around the central axis of the chassis as an axis and the silicon core as a starting point.
4. The apparatus for producing high purity polysilicon according to claim 2, wherein a plurality of slots are provided in the base plate, the plurality of slots being arranged at intervals in a radial direction of the base plate; the plasma heating device is characterized in that a plurality of plasma heaters are arranged on the rotating disc at intervals along the radial direction of the rotating disc, the plasma heaters are arranged on one side of the clamping grooves in a one-to-one correspondence mode, and the rotating disc drives the plasma heaters to rotate for a circle by taking the central shaft of the chassis as an axis and the corresponding silicon core as a starting point.
5. The apparatus for producing high purity polysilicon according to claim 2, wherein a plurality of slots are provided on the base plate, the plurality of slots being arranged at intervals in a circumferential direction of the base plate; the plasma heating device is characterized in that a plurality of plasma heaters are arranged on the rotating disc, the plasma heaters are arranged at intervals along the circumferential direction of the rotating disc, the plasma heaters are arranged on one side of the clamping grooves in a one-to-one correspondence mode, the rotating disc drives the plasma heaters to rotate to the adjacent silicon cores by taking the central shaft of the chassis as an axis and taking one silicon core as a starting point.
6. The apparatus for producing high purity polysilicon according to claim 2, wherein a plurality of the neck grooves are provided on the base plate, and the plurality of the neck grooves are provided at intervals in the circumferential direction and the radial direction of the base plate, respectively. The plasma heating device is characterized in that a plurality of plasma heaters are arranged on the rotating disc, the plasma heaters are arranged at intervals in the circumferential direction and the radial direction of the rotating disc respectively, and the plasma heaters are arranged on one side of the clamping grooves in a one-to-one correspondence mode.
7. The apparatus for producing high purity polysilicon according to claim 1, wherein the plasma heater comprises an inlet chamber, a plasma generation chamber and an exit chamber, the inlet chamber is communicated with the plasma generation chamber, the plasma generation chamber is communicated with the exit chamber, and the exit chamber is provided with a jet port which is provided on a side of the exit chamber facing the silicon core.
8. The apparatus for producing high purity polysilicon according to claim 1, wherein the base plate is annular, the base plate is fitted around the outer periphery of the first cylindrical electrode plate, and the second cylindrical electrode plate is fitted around the outer periphery of the base plate.
9. A method for producing high purity polycrystalline silicon, which is applied to the high purity polycrystalline silicon production apparatus of any one of claims 1 to 8, comprising the steps of:
a silicon core is placed on a chassis, and a driving assembly drives a plasma heater to rotate to one side of the silicon core;
the plasma heater sprays high-temperature plasma gas carrying silicon source gas to the surface of the silicon core, and silicon crystals grow on the surface of the silicon core;
the driving assembly drives the plasma heater to rotate by taking the central shaft of the chassis as an axis, polycrystalline silicon is formed in the area where the high-temperature plasma gas carrying the silicon source gas is located to generate a local reaction area, and a cylindrical silicon growth base is generated in the local reaction area;
the plasma heater is moved out from the space between the first cylindrical electrode plate and the second cylindrical electrode plate, the first cylindrical electrode plate and the second cylindrical electrode plate are electrified, the cylindrical silicon growth base is heated as a dielectric medium, silicon source gas is introduced between the first cylindrical electrode plate and the second cylindrical electrode plate, and the cylindrical silicon growth base extends in the direction of the first cylindrical electrode plate and/or the direction of the second cylindrical electrode plate to deposit and grow polycrystalline silicon, so that cylindrical silicon is obtained.
10. The method for producing polycrystalline silicon according to claim 9, wherein a plurality of slots are provided on the base plate, and when the number of the plasma heaters is plural, the plurality of slots are provided at intervals in a radial direction of the base plate; the driving component drives the plurality of plasma heaters to rotate by taking the central shaft of the chassis as an axis and the corresponding silicon core as a starting point, and the cylindrical silicon growth bases generated in the local reaction zone are arranged at intervals by taking the central shaft of the chassis as an axis;
and/or the clamping grooves are arranged at intervals along the circumferential direction of the chassis; the driving component drives the plurality of plasma heaters to rotate from one side of one silicon core to one side of an adjacent silicon core by taking the central shaft of the chassis as an axis.
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