CN114447748B - Micro-disc resonator based on multilayer step suspension structure - Google Patents
Micro-disc resonator based on multilayer step suspension structure Download PDFInfo
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- CN114447748B CN114447748B CN202210013405.3A CN202210013405A CN114447748B CN 114447748 B CN114447748 B CN 114447748B CN 202210013405 A CN202210013405 A CN 202210013405A CN 114447748 B CN114447748 B CN 114447748B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The application provides a micro-disk resonator based on a multi-layer step suspension structure, which comprises: the micro disk comprises a silicon substrate, a silicon dioxide substrate and an upper micro disk connected to the upper surface of the silicon dioxide substrate, wherein the silicon substrate, the silicon dioxide substrate and the upper micro disk are in central symmetry; the annular step is connected with the outer circumference of the upper micro-disc, and the plane center of the annular step coincides with the center of the micro-disc; when the incident light passes through the annular step and the surface of the micro disk, the total reflection of the light is relatively far away from the side wall of the micro disk, so that the Q value performance of the micro disk is improved. According to the application, the step structure surrounding the micro-disc is added at the edge of the micro-disc, so that the resonance electric field is far away from the rough side surface of the lower half part of the micro-disc, the interaction between resonance light and the side surface is reduced, and the side scattering loss of the micro-disc is reduced. By the method, the energy loss rate of the micro-disk is reduced, the size of the micro-disk is not obviously increased, and the high-Q silicon-based micro-disk resonator with small size is finally realized.
Description
Technical Field
The application relates to the technical field of optical communication and signal processing, in particular to a micro-disk resonator based on a multi-layer step suspension structure.
Background
The optical device is the core of optical information processing and is used for realizing various information acquisition and processing functions. Wherein the optical resonator is capable of selecting light of a specific wavelength and allowing it to stay in the resonator for a long period of time to generate stable resonance, greatly enhancing interaction of light with a substance. Therefore, the optical resonator can be used for information acquisition and processing and is an important component of an optical system.
The micro-disk resonator is a typical WGM optical resonator, has the advantages of small size, high Q value and the like, and is widely applied to the fields of lasers, sensors and the like. Wherein the Q value is an important index for measuring the performance of the micro-disk, and the interaction between light and substances can be enhanced by improving the Q value.
However, in the case of a conventional silicon-based micro-disk resonator with a radius of 20 μm, the theoretical simulation eigenvalue Q is about 1×10 7 . For the micro-disc, the size of the device is increased, so that the Q value can be increased, however, the increase of the size is unfavorable for the integration of the device, and the functional application of the device is severely restricted. Therefore, achieving higher Q values at smaller dimensions is an important research direction for micro-disk resonators.
Disclosure of Invention
The application provides a micro-disk resonator based on a multi-layer step suspension structure, which is used for solving the technical problem that the traditional silicon-based micro-disk resonator cannot realize a higher Q value under a smaller size.
In order to solve the above problems, the present application provides a micro-disk resonator based on a multi-layer step suspension structure, comprising:
the micro-disc comprises a silicon substrate, a silicon dioxide substrate connected to the upper surface of the silicon substrate and an upper micro-disc connected to the upper surface of the silicon dioxide substrate, wherein the silicon substrate, the silicon dioxide substrate and the upper micro-disc are in central symmetry;
the annular step is connected with the outer circumference of the upper micro-disc, and the plane center of the annular step coincides with the center of the micro-disc.
Further, the outer contour of the lower surface of the silicon dioxide substrate is corroded, and the corrosion width d is more than 2um.
Further, the micro-disc resonator is manufactured by adopting an SOI platform.
Further, the radius of the upper micro-disc is 20.1-20.2 mu m, and the overall height of the upper micro-disc is 219-221nm.
Further, the silicon substrate is made of a silicon material.
Further, the annular step is a two-layer step structure, the two-layer step structure comprises a first step positioned at the bottom and a second step positioned on the first step, and the first step and the second step are symmetrical about a center.
Further, the outward extension length of the first step is 150nm, and the step height of the first step is 125nm.
Further, the length of the second step extending outwards is 40nm, and the step height of the second step is 2.1nm.
Compared with the prior art, the application has remarkable advantages and beneficial effects, and is specifically embodied in the following aspects:
1. by introducing a plurality of layers of step structures surrounding the micro-disc and corroding the substrate, the edge of the micro-disc is in a suspended state, and by introducing each step structure, the position of the resonance light field of the micro-disc slightly moves towards the edge of the micro-disc, and the moving distance of the resonance light is far smaller than the extending length of the step. Compared with the common micro-disc structure, the designed micro-disc resonant light field is far away from the side wall of the device, so that the interaction between light energy and the side wall is reduced, namely the scattering loss of the device is reduced. Therefore, the energy scattering loss of the micro disk can be greatly reduced due to the multi-layer step structure;
2. the edge of the micro disk is in a suspended state, so that the refractive index difference between the device and external substances is increased, and the radiation loss of the device is further reduced.
3. The micro-disc step is separated from the outside and is in a central symmetry state, so that the substrate of the micro-disc can be uniformly corroded, and the normal resonance state of the micro-disc resonator is maintained.
4. The micro-disk structure designed by the application can greatly improve the intrinsic Q value of the micro-disk under the condition of smaller size, and is beneficial to constructing systems such as high-precision optical filters, sensing and the like on a chip.
Drawings
FIG. 1 is a schematic diagram of a step-suspended silicon-based micro-disk resonator in an embodiment of the application;
FIG. 2 is a schematic side view of a stepped suspended silicon-based micro-disk resonator according to an embodiment of the present application;
FIG. 3 is a first order resonant electric field diagram of a one-layer stepped suspended silicon-based microdisk resonator in accordance with an embodiment of the present application;
FIG. 4 is a diagram showing the electric field contrast between a stepped suspended silicon-based micro-disk resonator and a side surface of a conventional structure in an embodiment of the present application;
FIG. 5 is a graph of Q-value simulation results of a layer of step suspended silicon-based micro-disk resonator under different step heights and different step extension lengths in an embodiment of the application;
FIG. 6 is a graph showing the simulation results of Q values of a step suspended silicon-based micro-disk resonator with different step heights when the extension length is 150nm in an embodiment of the application;
FIG. 7 is a schematic diagram of a two-layer level-suspended silicon-based micro-disk resonator according to an embodiment of the present application.
Reference numerals:
1-micro disk, 11-silicon substrate, 12-silicon dioxide substrate, 13-upper micro disk, 2-annular step, 21-first step, 22-second step.
Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly and, as per the examples, may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
In addition, the terms front, rear, upper, lower, etc. are defined in the drawings by the positions of the components in the drawings and the positions of the components with respect to each other, and are only for the sake of clarity and convenience in expressing the technical solution. It should be understood that the use of such orientation terms should not limit the scope of the claimed application.
The manufacturing process of the micro-disc resonator is an important factor affecting the Q value, and besides energy loss caused by material absorption, the energy loss of the micro-disc resonator mainly comes from the surface and the side surface of the micro-disc. When light passes through these rough surfaces, total reflection of the light is affected, resulting in serious energy loss. For a long time, improving the surface state of the microdisk by optimizing the preparation process has been receiving a great deal of attention.
For example, anti-reflow and low damage plasma dry etching are important technological means for improving the device surface. However, the problems of high cost and difficulty in stably manufacturing a large number of resonators of the same nature due to the new process are difficult to solve. To avoid introducing new processes during the fabrication of devices, microdisks are tunedThe edge shape, which allows light to be relatively far from the rough sidewall, reduces interaction between them, and becomes an important way to increase the Q-value of the microdisk. The bottom of the micro-disc is directly connected with the coupling straight waveguide through a shallower Si layer to reduce the side loss, and the Q can be downloaded to 3X 10 6 However, this method results in light leaving the microdisk directly from the thin Si layer, and has very limited improvement in the Q-value performance of the microdisk.
Through the optimal design of the micro-disc structure, the defects brought by a device process can be made up to a certain extent, so that the large-scale preparation of the high-Q micro-disc resonator with stable performance becomes possible, and the functional design of the micro-disc resonator is facilitated.
The embodiment optimally designs the silicon-based micro-disc resonator with the ultrahigh Q value by utilizing the SOI platform, and has great application value in an optical system.
In addition, the quality factor of the micro-disk resonator is defined as: the ratio of the total energy stored in the cavity to the energy consumed per unit time can be expressed as:
wherein omega 0 Is the angular frequency and U (t) is the total energy stored in the cavity.
Wherein Q is i Is the intrinsic Q value of the micro-disk,is the radiation loss of the microdisk,/->Is the material absorption loss of the microdisk, +.>Is scattering loss. When the micro-disc size is unchanged, +.>Substantially fixed value, the magnitude of the Q value is mainly determined by +.>And->I.e. the smaller the energy loss per unit time, the higher the microdisk Q. The application mainly reduces the micro-disk resonatorAnd->The limitation capability of the micro-disk to light energy is improved, and finally the micro-disk with the ultra-high Q value is realized.
Referring to fig. 1-7, an embodiment of the present application provides a micro-disc resonator based on a multi-layer step suspension structure, which includes a micro-disc 1 and an annular step 2, wherein:
the micro disk 1 comprises a silicon substrate 11, a silicon dioxide substrate 12 and an upper micro disk 13, wherein the silicon dioxide substrate 12 is connected to the upper surface of the silicon substrate 11, the upper micro disk 13 is connected to the upper surface of the silicon dioxide substrate 12, and the silicon substrate 11, the upper micro disk 13 and the silicon dioxide substrate 13 are in central symmetry;
and the annular step 2 is connected with the outer circumference of the upper micro disk 13, and the plane center of the annular step 2 coincides with the center of the micro disk 1.
Referring to fig. 1, one embodiment of the present application adopts a silicon-based micro-disc resonator with a step suspended structure, which is mainly characterized in that:
first, the one-layer step structure is beneficial to reducing scattering lossThe introduction of the step structure can lead the position of the resonant light of the micro-disk to slightly move towards the edge of the micro-disk, and the moving distance of the resonant light is far smaller than the extension length of the step, so that the resonant light field of the micro-disk is far away from the side wall of the micro-disk, thereby reducing the interaction between the light and the side wall, namely reducing the scattering loss +.>
Second, the suspended structure is beneficial to reducing radiation loss at the bottom of the micro-diskThe edge of the micro disk is in a suspended state, the refractive index difference between the device and the outside is increased, and therefore the radiation loss is reduced>
When light enters a medium with a lower refractive index from a medium with a higher refractive index, if the incident angle is larger than a critical angle theta c When refracted light rays will disappear and all incident light rays will be reflected without entering the medium of low refractive index, a phenomenon known as total internal reflection. Wherein θ is c Can be expressed as:
wherein n is 1 Refractive index n of high refractive index material 2 Is a low refractive index material and has a refractive index of 0 DEG<n 2 <n 1 <90 deg.. When n is 1 And n 2 The greater the difference in refractive index between them, θ c The smaller the light, the more likely it is for total internal reflection to occur.
For whispering gallery mode structures such as microdisk resonators, light will follow total internal reflection of light as it propagates steadily in the device. The effect of total internal reflection is stronger when the refractive index difference between the microdisk 1 and the foreign substance is larger, and the confinement ability of the microdisk resonator to light is stronger. Because the refractive index of air is smaller than that of silicon dioxide, the silicon dioxide substrate 12 is corroded, the micro-disc resonator is in a suspended state, the refractive index difference between the micro-disc 1 and the outside is greatly improved, the internal total reflection effect of the micro-disc 1 is improved, the energy loss is reduced, and the quality factor of the micro-disc 1 is improved.
Specifically, referring to FIG. 2, the lower surface profile of the silicon dioxide substrate 12 is etched by a width d > 2um.
In this embodiment, for a stepped suspended silicon-based microdisk resonator, the bottom of the edge of the silicon dioxide substrate 12 is etched to suspend the microdisk 1.
Specifically, in an embodiment of the present application, the micro-disc resonator is fabricated using an SOI platform.
Specifically, in the embodiment of the present application, the radius of the upper micro disk 1 is 20.1-20.2 μm, and the overall height of the upper micro disk 1 is 219-221nm.
Referring to fig. 2, for a layer of step suspended silicon-based micro-disc resonator, the height of the upper micro-disc 1 is preferably 220nm, the step extension length is 150nm, the step height is 125nm, the silicon substrate 11 is made of silicon material, and the middle substrate is made of silicon dioxide material.
For a layer of step suspended silicon-based micro-disk resonator, the following is a detailed description of the improved performance superiority by combining the working principle:
referring to fig. 3, a first-order resonant electric field diagram of a silicon-based micro-disc resonator is shown, resonant light is distributed at the edge of the micro-disc, when light is stably transmitted in the micro-disc resonator, light meeting the resonance condition forms a ring-shaped resonant electric field near the edge of the micro-disc 1, and when light interacts with the surface and the side (total reflection), energy is continuously radiated to the external environment. Wherein, the resonance condition of the micro disk 1 is:
2πRn eff ＝mλ (4)
wherein n is eff R is the radius of the micro-disk resonator and m is the angular order of the micro-disk resonance, which is the effective refractive index of the resonant wavelength lambda.
Therefore, the energy loss on the side of the microdisk 1 is an important factor affecting the Q-value of the microdisk. By adjusting the side structure of the microdisk 1, the energy loss is reduced and the Q value is increased.
Referring to fig. 4, which shows a comparison diagram of a side electric field of a silicon-based micro-disc resonator with a step suspended structure and a conventional structure, by adding an annular step 2 surrounding the micro-disc at the upper half part of the micro-disc 1, the resonant light can be far away from the rough side of the micro-disc to a certain extent, the interaction between the light and the side is reduced, and the energy loss of the micro-disc 1 in unit time is reduced. From the point of the value of the maximum energy, the step structure also makes the energy more concentrated, which is beneficial to improving the Q value of the micro disk 1.
Referring to fig. 5, a graph of Q-value simulation results of a layer of step suspended silicon-based micro-disc resonator under different step heights and different step extension lengths is shown, and as the step length increases, the Q-value shows a variation trend of increasing first and then tending to stabilize.
The reason for this is that the resonance energy becomes smaller as the distance from the resonance center increases. Therefore, the action of the micro-disc step also becomes smaller and tends to be stable along with the increase of the extension length of the micro-disc step. Since the coupling pitch has a great influence on the functional application of the microdisk resonator, the microdisk 1 needs to select a smaller step extension length. The extension length was selected to be 150nm according to the trend of the Q value with respect to the extension length of the step.
Referring to fig. 6, a graph of Q-factor simulation results of a silicon-based micro-disc resonator with a step suspended in one layer is shown, wherein the extension length of the silicon-based micro-disc resonator is 150nm, and the intrinsic Q-factor of the micro-disc 1 is increased and then decreased with the increase of the step height of the one layer. When the step height of the micro disk 1 is increased, the energy loss of the lower half part of the micro disk 1 is reduced, and the intrinsic Q value starts to be reduced; as the step height increases, the resonant light moves outward of the microdisk, and the energy loss in the upper half of the microdisk 1 will become greater, at which time the intrinsic Q of the microdisk 1 begins to decrease. When the Q value of the micro disk of one layer of step is maximum, the height of the step is 125nm.
Referring to fig. 7, the present application further provides a second embodiment, namely a micro-disc resonator based on a two-layer step suspended structure:
specifically, referring to fig. 7, in the embodiment of the present application, the annular step 2 is a two-layered step structure, and the two-layered step structure includes a first step 21 at the bottom and a second step 22 on the first step 21, and the first step 21 and the second step 22 are symmetrical about the center.
Specifically, referring to fig. 7, in the embodiment of the present application, the outward extension length of the first step 21 is 150nm, and the step height of the first step 21 is 125nm.
Specifically, referring to fig. 7, in the embodiment of the present application, the second step 22 extends outward to a length of 40nm, and the step height of the second step 22 is 2.1nm.
The working performance of the double-layer stepped suspended silicon-based micro-disc resonator is introduced by combining the principle, and the simulation is carried out by using a time domain finite difference method, and the result shows that: the steps are added on the basis of one layer of steps, so that the Q value of the micro disk can be continuously improved.
When the extension length of one layer of step of the micro disk is 150nm and the step height is 125nm, the simulated intrinsic Q value is as high as 1.32257 multiplied by 109; on the basis, a two-layer step is added, and when the extension length of the step is 40nm and the step height is 2.1nm, the simulated intrinsic Q value is as high as 1.32307 multiplied by 109. When a step is added on the basis of the step, the resonant light energy is far away from the edge of the micro-disc, which means that the scattering loss of the device is lower, so that the Q value of the two-layer step micro-disc is higher than that of the one-layer step micro-disc.
Therefore, the Q value of the micro-disc can be greatly improved by designing a two-layer step structure.
For three-layer and above step structures, the above-described performance is found to be the same by analogy, and will not be described in detail herein.
Although the present disclosure is described above, the scope of protection of the present disclosure is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the disclosure, and these changes and modifications will fall within the scope of the application.
Claims (7)
1. A micro-disc resonator based on a multi-layer step suspension structure, comprising:
the micro-disc comprises a silicon substrate, a silicon dioxide substrate connected to the upper surface of the silicon substrate and an upper micro-disc connected to the upper surface of the silicon dioxide substrate, wherein the silicon substrate, the silicon dioxide substrate and the upper micro-disc are in central symmetry;
the outer contour of the lower surface of the silicon dioxide substrate is corroded, and the corrosion width d is more than 2um;
the annular step is connected to the outer circumference of the upper micro-disc, and the plane center of the annular step coincides with the center of the micro-disc;
when the incident light passes through the annular step and the surface of the micro disk, the total reflection of the light is relatively far away from the side wall of the micro disk, so that the Q value performance of the micro disk is improved.
2. The micro-disc resonator based on the multi-layer step suspension structure according to claim 1, wherein the micro-disc resonator is manufactured by using an SOI platform.
3. The micro-disc resonator based on the multi-layer step suspension structure according to claim 1, wherein the radius of the upper micro-disc is 20.1-20.2 μm, and the overall height of the upper micro-disc is 219-221nm.
4. The micro-disc resonator based on the multi-layer step suspension structure according to claim 1, wherein the silicon substrate is made of silicon material.
5. The micro-disc resonator based on the multi-layer step suspension structure according to claim 1, wherein the annular step is a two-layer step structure, the two-layer step structure comprises a first step at the bottom and a second step on the first step, and the first step and the second step are symmetrical about a center.
6. The micro-disc resonator based on the multi-layer step suspension structure according to claim 5, wherein the outward extension length of the first step is 150nm, and the step height of the first step is 125nm.
7. The micro-disc resonator based on the multi-step suspended structure according to claim 5, wherein the length of the second step extending outwards is 40nm, and the step height of the second step is 2.1nm.
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| US9678276B1 (en) * | 2016-01-07 | 2017-06-13 | Wisconsin Alumni Research Foundation | All-glass on-chip high quality-factor optical microresonator |
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| CN104466664A (en) * | 2013-09-22 | 2015-03-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Nanometer silicon concentric micro ring core er-doped laser device and manufacturing method thereof |
| CN104101945A (en) * | 2014-07-23 | 2014-10-15 | 宁波屹诺电子科技有限公司 | Horizontal slit optical waveguide based microdisk resonant cavity and production method thereof |
| US9678276B1 (en) * | 2016-01-07 | 2017-06-13 | Wisconsin Alumni Research Foundation | All-glass on-chip high quality-factor optical microresonator |
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