CN114447623A - Optical transparent diffuse reflection wave absorber with ultra-wideband microwave absorption and scattering functions - Google Patents
Optical transparent diffuse reflection wave absorber with ultra-wideband microwave absorption and scattering functions Download PDFInfo
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Abstract
An optical transparent diffuse reflection wave absorber with ultra-wideband microwave absorption and scattering functions relates to an optical transparent diffuse reflection wave absorber. The invention aims to solve the problems that the absorption bandwidth of the existing diffuse reflection wave absorber composition unit is narrow and the superposition of the absorption frequency band is low. The optical transparent diffuse reflection wave absorber sequentially consists of an upper graphical conductive film layer, a first transparent substrate, a first dielectric layer, a middle graphical conductive film layer, a second transparent substrate, a second dielectric layer, a bottom low-impedance conductive film layer and a third transparent substrate from top to bottom; the upper patterned conductive film layer consists of NxM impedance film units; the N multiplied by M resistance film units are composed of a first absorption unit and a second absorption unit. The invention is used for the optical transparent diffuse reflection wave absorber with ultra-wideband microwave absorption and scattering.
Description
Technical Field
The invention relates to an optical transparent diffuse reflection wave absorber.
Background
With the situation upgrade of radar electronic warfare, the low detectability of radar waves of key targets or vehicles is always intensively researched. With the rise of the super-surface concept, the artificial resonance unit is introduced into the scattered field reduction structure design and manufacture, and the stealth performance of facilities and equipment is effectively improved. The super-surface can be divided into super-surface absorbers and super-surface scatterers, according to the principle of achieving low detectability.
The super-surface wave absorber generates resistance heat by dissipating incident waves to realize low scattering of microwaves. The super-surface wave absorber is often composed of a resonator, a dielectric substrate, and a reflective floor. By virtue of the high degree of freedom of the structure, the super-surface wave absorber can be customized for the properties of the super-surface wave absorber, such as absorption bandwidth, total thickness, flexibility and the like.
The super-surface scatterer enables incident electromagnetic waves to be uniformly scattered to the space of the rear half part through destructive interference, and low microwave detectability is achieved. The structure of the super-surface wave absorber is similar to that of a super-surface wave absorber, and the super-surface scatterers are arranged by introducing the anti-phase reflection units, so that the low scattering effect is similar to that of the super-surface wave absorber.
Because the wave absorber and the scatterer are similar in structure, the wave absorber can simultaneously have microwave absorption and microwave scattering properties by finely designing a structure, and is called as a diffuse reflection wave absorber. To achieve better scattering reduction, the following conditions should be satisfied simultaneously: 1. the two units need to meet broadband absorption and the frequency bands of the two units are consistent; 2. the reflection phase difference of the two units in a wide frequency range is kept in a range of 135-225 degrees (called as an anti-phase frequency band); the absorption frequency band of the 3 units and the reflection phase difference anti-phase frequency band need to be kept consistent.
The existing diffuse reflection wave absorber has certain defects in performance due to the fact that the existing diffuse reflection wave absorber does not completely meet the conditions, such as:
1. the absorption frequency bands of the two units are narrow-band absorption or multi-frequency narrow-band absorption, the absorption frequency bands are inconsistent or the coincidence degree is low, and the anti-phase frequency band meets the requirement of a broadband. This will result in an antireflection effect similar to a conventional super-surface absorber or super-surface scatterer, with a reduction of about 10 dB.
2. The absorption frequency bands of the two units are narrow-band absorption, the absorption frequency bands are consistent, and the anti-phase frequency band meets the requirement of a broadband. This will result in the diffuse reflection absorber achieving excellent reflection reducing effect in the local narrow band, the local narrow band is reduced by about 20dB, other working frequency bands are reduced by about 10dB, and the bandwidth is too narrow to cause the practicability to be lost.
Based on the existing diffuse reflection wave absorber analysis, the condition of broadband reflection phase difference of the two units is easy to meet. But on the basis, the conditions that the two units realize broadband absorption and the absorption frequency bands of the two units are consistent are met, and the problem is difficult. This results in a diffuse reflecting absorber that has difficulty achieving strong fringing field reduction over a wide band. The difficulty of designing two structural units to have broadband absorption and reverse-phase absorption characteristics simultaneously hinders the simultaneous action of the two mechanisms and limits the further development of low-scattering equipment.
Disclosure of Invention
The invention provides an optical transparent diffuse reflection wave absorber with ultra-wide band microwave absorption and scattering, aiming at solving the problems that the absorption bandwidth of the existing diffuse reflection wave absorber composition unit is narrow and the superposition of the absorption frequency band is low.
An optical transparent diffuse reflection wave absorber with ultra-wideband microwave absorption and scattering functions comprises an upper patterned conductive film layer, a first transparent substrate, a first dielectric layer, a middle patterned conductive film layer, a second transparent substrate, a second dielectric layer, a bottom low-impedance conductive film layer and a third transparent substrate from top to bottom in sequence;
the upper patterned conductive film layer consists of N multiplied by M impedance film units; n is more than or equal to 5 columns, and M is more than or equal to 5 rows; the N multiplied by M impedance film units consist of a first absorption unit and a second absorption unit, and the number and the positions of the first absorption unit and the second absorption unit on the first transparent substrate are determined by an optimal coding sequence;
the side lengths P of the first absorption unit and the second absorption unit are both 8-25 mm, swastika-shaped transparent conductive films are arranged at the centers of the first absorption unit and the second absorption unit, no transparent conductive film is arranged at other positions, the swastika shape is formed by connecting 4L-shaped structure annular arrays, and the end part of the L-shaped structure at the center of the array is connected with the side edge of the adjacent L-shaped structure; an arm which is in an L-shaped structure and used for connection is an inner arm, and an arm which is vertical to the inner arm is an outer arm;
the length of the inner arm of the L-shaped structure of the first absorption unit is set to be L1The length of the outer arm of the L-shaped structure is L2The width of the inner arm of the L-shaped structure is w1The width of the outer arm of the L-shaped structure is w2；l1＝0.2P～0.3P，l2＝0.2P～0.5P，w1＝0.05P～0.2P，w2＝0.05P～0.2P；
The length of the inner arm of the L-shaped structure of the second absorption unit is set to be L1The length of the outer arm of the L-shaped structure is L2The width of the inner arm of the L-shaped structure is W1Width W of outer arm of L-shaped structure2；L1＝0.3P～0.5P，L2＝0.2P～0.5P，W1＝0.05P～0.2P，W2＝0.2P～0.4P；
The middle-layer patterned conductive film unit is arranged on the middle-layer patterned conductive film layer, has the same structure as the impedance film unit and corresponds to the impedance film unit in position, a transparent conductive film is not arranged in the swastika-shaped area on the middle-layer patterned conductive film unit, and transparent conductive films are arranged at other positions of the middle-layer patterned conductive film unit.
The invention has the beneficial effects that:
the invention uses the diffuse reflection wave absorber of microwave band absorption principle and scattering principle at the same time. The broadband absorption performance of the double-layer complementary resonator unit structure is less influenced by the variation of the resonator parameters. The unit adopting the design can stably realize the broadband microwave absorption performance. Further, by appropriately changing the geometrical parameters of the resonator, it is possible to obtain a cell having an anti-phase reflection phase over a wide frequency band, so that the phase difference of the cell over the wide frequency band satisfies the interval of 135 ° to 225 °. The anti-phase frequency band and the absorption frequency band of the broadband unit are kept consistent, so that the distributed structure has an obvious and stronger scattered field reduction effect. The scattering field reduction of the proposed structure is higher than 20dB in the frequency band of 8.5 GHz-21 GHz. While still ensuring good fringing fields at a tilt angle of 40 deg..
The invention is used for an optical transparent diffuse reflection wave absorber with ultra-wideband microwave absorption and scattering.
Drawings
Fig. 1 is a schematic structural view of an optical transparent diffuse reflection absorber with ultra-wideband microwave absorption and scattering according to the present invention, which includes a first absorption unit, wherein 1 is an upper patterned conductive film layer, 2 is a first transparent substrate, 3 is a middle patterned conductive film layer, 4 is a second transparent substrate, 5 is a bottom low-impedance conductive film layer, 6 is a third transparent substrate, 7 is a first dielectric layer, and 8 is a second dielectric layer;
fig. 2 is a schematic structural view of an optical transparent diffuse reflection absorber with ultra-wideband microwave absorption and scattering according to the present invention, which includes a second absorption unit, wherein 1 is an upper patterned conductive film layer, 2 is a first transparent substrate, 3 is a middle patterned conductive film layer, 4 is a second transparent substrate, 5 is a bottom low-impedance conductive film layer, 6 is a third transparent substrate, 7 is a first dielectric layer, and 8 is a second dielectric layer;
FIG. 3 is a top view of FIG. 1;
FIG. 4 is a top view of FIG. 2;
FIG. 5 is a side view of FIG. 1, with 1 being an upper patterned conductive film layer, 2 being a first transparent substrate, 3 being a middle patterned conductive film layer, 4 being a second transparent substrate, 5 being a bottom low impedance conductive film layer, 6 being a third transparent substrate, 7 being a first dielectric layer, 8 being a second dielectric layer;
FIG. 6 is a diagram illustrating an exemplary optimal code sequence determination process;
FIG. 7 is a schematic diagram showing the number and positions of the first absorption units and the second absorption units on the first transparent substrate after an optimal code sequence is determined according to the embodiment;
FIG. 8 is a schematic view of a diffuse reflection absorber after determination of an optimal code sequence according to an embodiment;
FIG. 9 is a graph of the absorption rate of a first absorption unit or a second absorption unit in an optically transparent diffuse reflection absorber with both ultra-wideband microwave absorption and scattering according to an embodiment of the periodic boundary calculation; 1 is a first absorption unit, and 2 is a second absorption unit;
FIG. 10 is a graph of the reflection phase of the first absorption unit or the second absorption unit in an optically transparent diffuse reflection absorber with both ultra-wideband microwave absorption and scattering according to an embodiment of the periodic boundary calculation; 1 is a first absorption unit, 2 is a second absorption unit, and 3 is a phase difference;
FIG. 11 is a diagram of a reduction of a scattering field of an optically transparent diffuse reflection absorber with ultra-wideband microwave absorption and scattering according to an embodiment, where 1 is field superposition calculation, and 2 is full-wave simulation;
FIG. 12 is a diagram of a reduction of a scattering field of an optically transparent diffusely reflecting absorber with ultra-wideband microwave absorption and scattering according to a change in polarization angle in accordance with an embodiment;
FIG. 13 is a diagram illustrating a reduction of a scattering field of an optically transparent diffuse reflection absorber with ultra-wideband microwave absorption and scattering according to an embodiment, with an increasing incident angle of a TE wave;
FIG. 14 is a diagram illustrating a reduction of scattering field with increasing incident angle of TM wave for an optically transparent diffuse reflection absorber with ultra-wideband microwave absorption and scattering according to an embodiment.
Detailed Description
The first embodiment is as follows: specifically, referring to fig. 1 to 5, the optical transparent diffuse reflection absorber with ultra-wideband microwave absorption and scattering according to the present embodiment is sequentially composed of an upper patterned conductive film layer, a first transparent substrate, a first dielectric layer, a middle patterned conductive film layer, a second transparent substrate, a second dielectric layer, a bottom low-impedance conductive film layer, and a third transparent substrate from top to bottom;
the upper patterned conductive film layer consists of NxM impedance film units; n is more than or equal to 5 columns, and M is more than or equal to 5 rows; the N multiplied by M impedance film units consist of a first absorption unit and a second absorption unit, and the number and the positions of the first absorption unit and the second absorption unit on the first transparent substrate are determined by an optimal coding sequence;
the side lengths P of the first absorption unit and the second absorption unit are both 8-25 mm, swastika-shaped transparent conductive films are arranged at the centers of the first absorption unit and the second absorption unit, no transparent conductive film is arranged at other positions, the swastika shape is formed by connecting 4L-shaped structure annular arrays, and the end part of the L-shaped structure at the center of the array is connected with the side edge of the adjacent L-shaped structure; an arm which is in an L-shaped structure and used for connection is an inner arm, and an arm which is vertical to the inner arm is an outer arm;
the length of the inner arm of the L-shaped structure of the first absorption unit is set to be L1The length of the outer arm of the L-shaped structure is L2The width of the inner arm of the L-shaped structure is w1And the width of the outer arm of the L-shaped structure is w2；l1＝0.2P～0.3P，l2＝0.2P～0.5P，w1＝0.05P～0.2P，w2＝0.05P～0.2P；
The length of the inner arm of the L-shaped structure of the second absorption unit is set to be L1The length of the outer arm of the L-shaped structure is L2And the width of the inner arm of the L-shaped structure is W1Width W of outer arm of L-shaped structure2；L1＝0.3P～0.5P，L2＝0.2P～0.5P，W1＝0.05P～0.2P，W2＝0.2P～0.4P；
The middle-layer patterned conductive film unit is arranged on the middle-layer patterned conductive film layer, has the same structure as the impedance film unit and corresponds to the impedance film unit in position, a transparent conductive film is not arranged in the swastika-shaped area on the middle-layer patterned conductive film unit, and transparent conductive films are arranged at other positions of the middle-layer patterned conductive film unit.
In the embodiment, the middle patterned conductive film layer and the impedance film unit are of a double-layer complementary structure, the unit shape and the swastika shape are completely the same, and only the arrangement positions of the conductive films are different.
The two structural units (the first absorption unit and the second absorption unit) with the same anti-phase frequency band and absorption frequency band are adopted in the embodiment, the two structural units have stable broadband absorption performance, the phase difference in the broadband satisfies the interval of 135-225 degrees, and the absorption frequency band and the anti-phase frequency band are kept consistent.
The absorption units of the present embodiment having different reflection phases are arranged in a specific manner on a two-dimensional plane.
In the embodiment, the upper patterned conductive film layer and the middle patterned conductive film layer are obtained by etching the resistive film with laser or screen printing the resistive film.
The beneficial effects of the embodiment are as follows:
the present embodiment uses both the microwave band absorption principle and the scattering principle of the diffuse reflection absorber. The broadband absorption performance of the double-layer complementary resonator unit structure is less influenced by the variation of the resonator parameters. The unit adopting the design can stably realize the broadband microwave absorption performance. Further, by appropriately changing the geometrical parameters of the resonator, it is possible to obtain a cell having an anti-phase reflection phase over a wide frequency band, so that the phase difference of the cell over the wide frequency band satisfies the interval of 135 ° to 225 °. The anti-phase frequency band and the absorption frequency band of the broadband unit are kept consistent, so that the distributed structure has an obviously stronger scattered field reduction effect. The scattering field reduction of the proposed structure is higher than 20dB in the frequency band of 8.5 GHz-21 GHz. While still ensuring good fringing fields at a tilt angle of 40 deg..
The second embodiment is as follows: the first difference between the present embodiment and the specific embodiment is: the first dielectric layer and the second dielectric layer are air dielectric layers or plastic foams, and the relative dielectric constants are 1-1.2. The rest is the same as the first embodiment.
The third concrete implementation mode: this embodiment is different from the first or second embodiment in that: the thickness of the first dielectric layer and the second dielectric layer is 2 mm-5 mm. The other is the same as in the first or second embodiment.
The fourth concrete implementation mode: the difference between this embodiment mode and one of the first to third embodiment modes is: the first transparent substrate, the second transparent substrate and the third transparent substrate are all made of PET, PEN or PVC. The others are the same as the first to third embodiments.
The fifth concrete implementation mode: the difference between this embodiment and one of the first to fourth embodiments is: the thicknesses of the first transparent substrate, the second transparent substrate and the third transparent substrate are 0.1-0.2 mm. The rest is the same as the first to fourth embodiments.
The sixth specific implementation mode: the difference between this embodiment and one of the first to fifth embodiments is: the relative dielectric constants of the first transparent matrix, the second transparent matrix and the third transparent matrix are all 2-4. The other is the same as one of the first to fifth embodiments.
The seventh concrete implementation mode: the difference between this embodiment and one of the first to sixth embodiments is: the upper patterned conductive film layer, the middle patterned conductive film layer and the bottom low-impedance conductive film layer are all ITO films, silver nanowire films and copper mesh grid films. The others are the same as the first to sixth embodiments.
The specific implementation mode is eight: the present embodiment differs from one of the first to seventh embodiments in that: the layer resistance of the upper patterned conductive film layer is consistent with that of the middle patterned conductive film layer, and the layer resistance is 100 omega/□ -150 omega/□; the area resistance of the bottom low-impedance conductive film layer is less than 15 omega/□. The rest is the same as the first to seventh embodiments.
The specific implementation method nine: the present embodiment differs from the first to eighth embodiments in that: the thicknesses of the upper patterned conductive film layer, the middle patterned conductive film layer and the bottom low-impedance conductive film layer are 0.01-100 mu m. The other points are the same as those in the first to eighth embodiments.
The detailed implementation mode is ten: the present embodiment differs from one of the first to ninth embodiments in that: the first absorption unit and the second absorption unit have a phase difference of 135-225 degrees within 8.4 GHz-20 GHz. The other points are the same as those in the first to ninth embodiments.
The following examples were employed to demonstrate the beneficial effects of the present invention:
the first embodiment is as follows:
an optical transparent diffuse reflection wave absorber with ultra-wideband microwave absorption and scattering functions comprises an upper patterned conductive film layer, a first transparent substrate, a first dielectric layer, a middle patterned conductive film layer, a second transparent substrate, a second dielectric layer, a bottom low-impedance conductive film layer and a third transparent substrate from top to bottom in sequence;
the upper patterned conductive film layer consists of NxM impedance film units; the N is 21 columns, and the M is 21 rows; the N multiplied by M impedance film units consist of a first absorption unit and a second absorption unit, and the number and the positions of the first absorption unit and the second absorption unit on the first transparent substrate are determined by an optimal coding sequence;
the side lengths P of the first absorption unit and the second absorption unit are both 15mm, swastika-shaped transparent conductive films are arranged at the centers of the first absorption unit and the second absorption unit, no transparent conductive film is arranged at other positions, the swastika shape is formed by connecting 4L-shaped structure annular arrays, and the end part of the L-shaped structure at the center of each array is connected with the side edge of the adjacent L-shaped structure; an arm which is provided with an L-shaped structure and used for connection is an inner arm, and an arm which is vertical to the inner arm is an outer arm;
the length of the inner arm of the L-shaped structure of the first absorption unit is set to be L1The length of the outer arm of the L-shaped structure is L2And the width of the inner arm of the L-shaped structure is w1The width of the outer arm of the L-shaped structure is w2；l1＝4mm，l2＝4mm，w1＝1.5mm，w2＝1mm；
The length of the inner arm of the L-shaped structure of the second absorption unit is set to be L1The length of the outer arm of the L-shaped structure is L2The width of the inner arm of the L-shaped structure is W1Width W of outer arm of L-shaped structure2；L1＝6mm，L2＝5mm，W1＝1.5mm，W2＝4mm；
The middle-layer patterned conductive film unit is arranged on the middle-layer patterned conductive film layer, has the same structure as the impedance film unit and corresponds to the impedance film unit in position, a transparent conductive film is not arranged in the swastika-shaped area on the middle-layer patterned conductive film unit, and transparent conductive films are arranged at other positions of the middle-layer patterned conductive film unit.
The first dielectric layer and the second dielectric layer are air dielectric layers.
The thickness of the first dielectric layer and the second dielectric layer is 4 mm.
The first transparent substrate, the second transparent substrate and the third transparent substrate are all made of transparent PET.
The thickness of the first transparent substrate, the second transparent substrate and the third transparent substrate is 0.188 mm.
The relative dielectric constants of the first transparent matrix, the second transparent matrix and the third transparent matrix are all 2.65.
The upper patterned conductive film layer, the middle patterned conductive film layer and the bottom low-impedance conductive film layer are all ITO films.
The upper patterned conductive film layer and the middle patterned conductive film layer have the same layer resistance, and the layer resistance is 110 omega/□; the surface resistance of the bottom low-impedance conductive film layer is 10 omega/□.
The thicknesses of the upper patterned conductive film layer, the middle patterned conductive film layer and the bottom low-impedance conductive film layer are 0.01 mm.
FIG. 6 is a diagram of an optimal code sequence determination process according to an embodiment; in this embodiment, the number and the positions of the first absorption unit and the second absorption unit on the first transparent substrate are determined by the optimal coding sequence, the matrix arrangement of 21 × 21 units is optimized, and in order to avoid the coupling effect between the units, the 21 × 21 units are split into 7 × 7 regions, where each region only includes the first absorption unit or the second absorption unit. 3 × 3 units included in one area are called as sub-units, and then 7 × 7 sub-units are respectively filled in unit types for optimization, specifically according to the following steps:
(1) calculating a scattering far-field directional diagram by adopting a genetic algorithm or other local search algorithms to determine a spatial position and adopt a unit type, thereby obtaining the spatial arrangement of the units: optimizing the structure far field scattering uniformity by using a genetic algorithm, wherein the diffuse reflection absorber scattering directional diagram is calculated by a field superposition method:
where k is the wave number of the electromagnetic wave in vacuum, xm,nAnd ym,nThe horizontal and vertical coordinates of the sub-array units in the mth row and the nth row in the coordinate system, EELEIs the scattered field of the sub-unit, EMETAIs the total scattered field of the diffusely reflecting absorber, theta and
respectively the elevation angle and the azimuth angle of a far field directional diagram coordinate system;
(2) the fitness function adopted by the machine optimization algorithm is the reduction of the scattered field relative to the equal-size metal plate: optimizing by adopting scattered field reduction as an optimization function to obtain an optimal coding sequence:
Fitness＝-20×lg(max(EMETA)/max(EPEC)) (2)
wherein EMETAAnd EPECRespectively the total scattering field of the diffuse reflection wave absorber and the total scattering field of the good conductor with equal size, and max (E) is a function of the amplitude of the strongest electric field in the selected rear half space;
(3) and randomly generating a diffuse reflection wave absorber population by adopting a genetic algorithm, evaluating, generating a new population by utilizing selection, intersection and mutation operators based on an evaluation result, and circulating until an evolution algebra reaches an upper limit or a scattered field is reduced to meet requirements, as shown in fig. 7 and 8.
FIG. 9 is a graph of the absorption rate of a first absorption unit or a second absorption unit in an optically transparent diffuse reflection absorber with both ultra-wideband microwave absorption and scattering according to an embodiment of the periodic boundary calculation; 1 is a first absorption unit, and 2 is a second absorption unit; FIG. 10 is a graph of the reflection phase of the first absorption unit or the second absorption unit in an optically transparent diffuse reflection absorber with both ultra-wideband microwave absorption and scattering according to an embodiment of the periodic boundary calculation; 1 is a first absorption unit, 2 is a second absorption unit, and 3 is a phase difference; as can be seen from the figure, the absorption rate of the first absorption unit is higher than 0.9 under the broadband of 7 GHz-20.3 GHz, the absorption rate of the second absorption unit is higher than 0.9 under the broadband of 6 GHz-21 GHz, the variation interval of the two units in the frequency band is small, the absorption frequency bands of the two units are approximately and completely overlapped, and therefore the units used by the diffuse reflection wave absorber can meet the broadband absorption condition. Meanwhile, the two inverting units change smoothly in a broadband of 8.4 GHz-20 GHz and have large reflection phase difference (145-215 degrees), so that far-field scattering regulation and control in the broadband are easier. Most importantly, the absorption waveband is consistent with the waveband with large phase difference, so that the simultaneous application of the two principles is ensured, and the scattering reduction effect is effectively improved.
FIG. 11 is a diagram showing a reduction of the scattered field of an optically transparent diffuse reflection absorber with ultra-wideband microwave absorption and scattering according to an embodiment, where 1 is a field superposition calculation, and 2 is a full-wave simulation; as can be seen from the figure, the finally obtained unit arrangement shows a strong scattering field reduction effect of a broadband, and the scattering field reduction is higher than 20dB compared with that of a good conductor in a frequency band of 8.5 GHz-21 GHz. Meanwhile, compared with the accurate solution of full-wave simulation, the result obtained by field superposition calculation and the deviation thereof are smaller. Meanwhile, the time for field superposition calculation is extremely short, about one thousandth of full-wave simulation, and extremely short calculation time is favorable for reduction and optimization of the wide-band scattered field of the large population.
FIG. 12 is a diagram of a reduction of a scattering field of an optically transparent diffusely reflecting absorber with ultra-wideband microwave absorption and scattering according to a change in polarization angle in accordance with an embodiment; FIG. 13 is a diagram illustrating a reduction of a scattering field of an optically transparent diffuse reflection absorber with ultra-wideband microwave absorption and scattering according to an embodiment, with an increasing incident angle of a TE wave; FIG. 14 is a diagram illustrating a reduction of scattering field with increasing incident angle of TM wave for an optically transparent diffuse reflection absorber with ultra-wideband microwave absorption and scattering according to an embodiment. As can be seen from the figure, the reduction of the scattered field is almost unchanged along with the change of the polarization angle of the incident wave, and good polarization stability is shown. The structure has a scattered field reduction higher than 20dB in the working frequency band within the incidence angle range of 20 degrees, and the scattered field reduction can still be maintained above 10dB in the working frequency band when the incidence angle is gradually increased to 40 degrees, which indicates good angular stability of the scattered field reduction. Thus, the structure has good polarization stability and angle stability.
Claims (10)
1. An optical transparent diffuse reflection wave absorber with ultra-wideband microwave absorption and scattering functions is characterized by sequentially consisting of an upper patterned conductive film layer, a first transparent substrate, a first dielectric layer, a middle patterned conductive film layer, a second transparent substrate, a second dielectric layer, a bottom low-impedance conductive film layer and a third transparent substrate from top to bottom;
the upper patterned conductive film layer consists of NxM impedance film units; n is more than or equal to 5 columns, and M is more than or equal to 5 rows; the N multiplied by M impedance film units consist of a first absorption unit and a second absorption unit, and the number and the positions of the first absorption unit and the second absorption unit on the first transparent substrate are determined by an optimal coding sequence;
the side lengths P of the first absorption unit and the second absorption unit are both 8-25 mm, swastika-shaped transparent conductive films are arranged at the centers of the first absorption unit and the second absorption unit, no transparent conductive film is arranged at other positions, the swastika shape is formed by connecting 4L-shaped structure annular arrays, and the end part of the L-shaped structure at the center of the array is connected with the side edge of the adjacent L-shaped structure; an arm which is in an L-shaped structure and used for connection is an inner arm, and an arm which is vertical to the inner arm is an outer arm;
the length of the inner arm of the L-shaped structure of the first absorption unit is set to be L1And the length of the outer arm of the L-shaped structure is L2The width of the inner arm of the L-shaped structure is w1The width of the outer arm of the L-shaped structure is w2；l1＝0.2P～0.3P，l2＝0.2P～0.5P，w1＝0.05P～0.2P，w2＝0.05P～0.2P；
The length of the inner arm of the L-shaped structure of the second absorption unit is set to be L1And the length of the outer arm of the L-shaped structure is L2The width of the inner arm of the L-shaped structure is W1Width W of outer arm of L-shaped structure2；L1＝0.3P～0.5P，L2＝0.2P～0.5P，W1＝0.05P～0.2P，W2＝0.2P～0.4P；
The middle-layer patterned conductive film unit is arranged on the middle-layer patterned conductive film layer, has the same structure as the impedance film unit and corresponds to the impedance film unit in position, a transparent conductive film is not arranged in the swastika-shaped area on the middle-layer patterned conductive film unit, and transparent conductive films are arranged at other positions of the middle-layer patterned conductive film unit.
2. The optical transparent diffuse reflection absorber with ultra-wideband microwave absorption and scattering functions as claimed in claim 1, wherein the first dielectric layer and the second dielectric layer are air dielectric layers or plastic foams, and the relative dielectric constants are 1-1.2.
3. The optical transparent diffuse reflection absorber capable of both ultra-wideband microwave absorption and scattering according to claim 1, wherein the thickness of the first dielectric layer and the second dielectric layer is 2mm to 5 mm.
4. The optical transparent diffuse reflection absorber capable of both ultra-wideband microwave absorption and scattering according to claim 1, wherein the first transparent substrate, the second transparent substrate and the third transparent substrate are made of PET, PEN or PVC.
5. The optical transparent diffuse reflection absorber capable of both ultra-wideband microwave absorption and scattering according to claim 1, wherein the first transparent substrate, the second transparent substrate and the third transparent substrate have a thickness of 0.1mm to 0.2 mm.
6. The optical transparent diffuse reflection absorber capable of both ultra-wideband microwave absorption and scattering according to claim 1, wherein the relative dielectric constants of the first transparent substrate, the second transparent substrate and the third transparent substrate are all 2-4.
7. The optical transparent diffuse reflection absorber of claim 1, wherein the upper patterned conductive film layer, the middle patterned conductive film layer and the bottom low-impedance conductive film layer are all ITO films, silver nanowire films and copper mesh grid films.
8. The optical transparent diffuse reflection absorber with both ultra-wideband microwave absorption and scattering of claim 1, wherein the upper patterned conductive film layer and the middle patterned conductive film layer have the same layer resistance, and the layer resistance is 100 Ω/□ -150 Ω/□; the area resistance of the bottom low-impedance conductive film layer is less than 15 omega/□.
9. The optical transparent diffuse reflection absorber with ultra-wideband microwave absorption and scattering of claim 1, wherein the upper patterned conductive film layer, the middle patterned conductive film layer and the bottom low-impedance conductive film layer have a thickness of 0.01 μm to 100 μm.
10. The optical transparent diffuse reflection absorber of claim 1, wherein the first absorption unit and the second absorption unit have a phase difference of 135 ° to 225 ° in a range of 8.4GHz to 20 GHz.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210181426.6A CN114447623B (en) | 2022-02-25 | 2022-02-25 | Optical transparent diffuse reflection wave absorber with ultra-wideband microwave absorption and scattering functions |
| PCT/CN2023/075952 WO2023160435A1 (en) | 2022-02-25 | 2023-02-14 | Optically transparent diffuse reflection wave absorber capable of absorbing and scattering ultra-wideband microwaves |
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| CN115674819A (en) * | 2023-01-03 | 2023-02-03 | 湖南博翔新材料有限公司 | Broadband wave-absorbing material and preparation method thereof |
| CN116106998A (en) * | 2023-04-10 | 2023-05-12 | 广东工业大学 | Tunable near infrared absorber based on composite structure of shape array and titanium nitride |
| WO2023160435A1 (en) * | 2022-02-25 | 2023-08-31 | 哈尔滨工业大学 | Optically transparent diffuse reflection wave absorber capable of absorbing and scattering ultra-wideband microwaves |
| CN116864994A (en) * | 2023-08-04 | 2023-10-10 | 中南大学 | Double-impedance-layer high-performance wave-absorbing structure |
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| WO2023160435A1 (en) | 2023-08-31 |
| CN114447623B (en) | 2023-02-24 |
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