CN114447237A - Quantum dot light-emitting diode and preparation method thereof - Google Patents

Quantum dot light-emitting diode and preparation method thereof Download PDF

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CN114447237A
CN114447237A CN202011188004.9A CN202011188004A CN114447237A CN 114447237 A CN114447237 A CN 114447237A CN 202011188004 A CN202011188004 A CN 202011188004A CN 114447237 A CN114447237 A CN 114447237A
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quantum dot
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胡忠宇
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TCL Technology Group Co Ltd
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Abstract

The invention discloses a quantum dot light-emitting diode and a preparation method thereof, wherein the quantum dot light-emitting diode comprises a cathode, an anode and a quantum dot light-emitting layer arranged between the cathode and the anode, and the quantum dot light-emitting layer material comprises lead quantum dots and a block polymer coated on the surfaces of the lead quantum dots. The invention introduces a block polymer to modify the surface of the lead quantum dot, thereby forming a coating layer consisting of the block polymer on the surface of the lead quantum dot. On one hand, the block polymer is beneficial to the stability of the lead quantum dots, weakens the clusters of the lead quantum dots, reduces the energy transfer of the Dexter between the lead quantum dots and reduces the energy loss; on the other hand, the hydrophobicity of the block polymer and the coating structure thereof can weaken the erosion of water and oxygen, and the luminous efficiency and the service life of the quantum dot light-emitting diode are improved.

Description

Quantum dot light-emitting diode and preparation method thereof
Technical Field
The invention relates to the field of quantum dots, in particular to a quantum dot light-emitting diode and a preparation method thereof.
Background
In recent years, with the rapid development of display technologies, quantum dot light emitting diodes (QLEDs) having semiconductor Quantum Dot (QDs) materials as light emitting layers have received much attention. The quantum dot light-emitting diode has the advantages of high color purity, high luminous efficiency, adjustable luminous color, stable device and the like, so that the quantum dot light-emitting diode has wide application prospect in the fields of flat panel display, solid state lighting and the like.
Currently researched QLEDs generally adopt a sandwich structure, and a device includes an anode, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, and a cathode. The quantum dot light-emitting layer is formed by a layer of nano particles, and the problems existing at present are as follows: if the concentration of the nano particles is too low, a compact quantum dot layer cannot be formed, namely holes appear, and leakage current can be caused; if the concentration of the nanoparticles is too high, the accumulation of the nanoparticles occurs, i.e. cluster generation occurs, which leads to Dexter energy transfer (the Dexter energy transfer belongs to non-radiative energy transfer), and the luminous efficiency of the device is reduced; in addition, the corrosion of water and oxygen to the quantum dot light emitting layer destroys the stability of the quantum dots, thereby causing the reduction of the light emitting efficiency and the service life of the device.
Therefore, the prior art is still to be improved.
Disclosure of Invention
In view of the above-mentioned deficiencies of the prior art, the present invention aims to provide a quantum dot light emitting diode and a method for manufacturing the same, which aims to solve the problem of low light emitting efficiency of the conventional quantum dot light emitting diode.
The technical scheme of the invention is as follows:
the quantum dot light-emitting diode comprises a cathode, an anode and a quantum dot light-emitting layer arranged between the cathode and the anode, wherein the quantum dot light-emitting layer material comprises lead quantum dots and a block polymer coated on the surfaces of the lead quantum dots.
A preparation method of a quantum dot light-emitting diode comprises the following steps:
providing an anode substrate;
preparing a quantum dot light-emitting layer on the surface of the anode substrate, wherein the quantum dot light-emitting layer comprises lead quantum dots and a block polymer coated on the surfaces of the lead quantum dots;
preparing a cathode on the surface of the quantum dot light-emitting layer to prepare the quantum dot light-emitting diode;
alternatively, a cathode substrate is provided;
preparing a quantum dot light-emitting layer on the surface of the cathode substrate, wherein the quantum dot light-emitting layer material comprises lead quantum dots and a block polymer coated on the surfaces of the lead quantum dots;
and preparing an anode on the surface of the quantum dot light-emitting layer to obtain the quantum dot light-emitting diode.
Has the advantages that: the quantum dot light-emitting diode provided by the invention comprises a quantum dot light-emitting layer arranged between a cathode and an anode, wherein the quantum dot light-emitting layer comprises a lead quantum dot and a block polymer coated on the surface of the lead quantum dot. According to the invention, a block polymer is introduced into the lead-based quantum dot to modify the surface of the quantum dot nano-particles, so that a coating layer consisting of the block polymer is formed on the surface of the lead-based quantum dot. On one hand, the block polymer is beneficial to the stability of the lead quantum dots, weakens the clusters of the lead quantum dots, reduces the energy transfer between the lead quantum dots, and reduces the energy loss, thereby effectively improving the luminous efficiency of the quantum dot light-emitting diode; on the other hand, due to the existence of the structure of the hydrophobicity of the block polymer and the coating layer, the corrosion of water and oxygen can be weakened, and the luminous efficiency and the service life of the quantum dot light-emitting diode are improved.
Drawings
Fig. 1 is a schematic structural diagram of a quantum dot light emitting diode with a positive structure according to a preferred embodiment of the invention.
Fig. 2 is a schematic structural diagram of a quantum dot light-emitting diode with an inversion structure according to a preferred embodiment of the invention.
Fig. 3 is a flowchart of a method for manufacturing a quantum dot light emitting diode with a positive structure according to a preferred embodiment of the present invention.
Fig. 4 is a flowchart of a method for manufacturing an inversion-structured quantum dot light emitting diode according to a preferred embodiment of the present invention.
Detailed Description
The invention provides a quantum dot light-emitting diode and a preparation method thereof, and the invention is further described in detail below in order to make the purpose, technical scheme and effect of the invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The conventional quantum dot light-emitting diode usually causes Dexter energy transfer due to the accumulation of quantum dot materials, so that the light-emitting efficiency of the quantum dot light-emitting diode is reduced, the stability of quantum dots is easily damaged by the erosion of water and oxygen molecules, the light-emitting efficiency of the quantum dot light-emitting diode is further reduced, and the service life of the quantum dot light-emitting diode is prolonged.
Based on the problems in the prior art, the embodiments of the present invention provide a quantum dot light emitting diode, which includes a cathode, an anode, and a quantum dot light emitting layer disposed between the cathode and the anode, where the quantum dot light emitting layer material includes a lead-based quantum dot and a block polymer coated on the surface of the lead-based quantum dot.
In this embodiment, a block polymer is introduced to modify the surface of the lead-based quantum dot, so as to form a coating layer on the surface of the lead-based quantum dot, wherein the coating layer is composed of the block polymer. The block polymer is beneficial to the stability of the lead quantum dots, weakens the clusters of the lead quantum dots, reduces the Dexter energy transfer between the lead quantum dots and the energy loss, and thus can effectively improve the luminous efficiency of the quantum dot light-emitting diode; on the other hand, due to the existence of the structure of the hydrophobicity of the block polymer and the coating layer, the corrosion of water and oxygen can be weakened, and the luminous efficiency and the service life of the quantum dot light-emitting diode are improved.
In some embodiments, the lead-based quantum dots specifically bind to the block polymer. The specific binding refers to a binding process in which a ligand which is targeted and competitively blocked by a corresponding substance interacts with a specific structural site in vitro or in vivo, such as binding between an antigen and an antibody or between a receptor and a ligand. In this embodiment, the block polymer can specifically bind to the lead-based quantum dot because the block polymer contains lone electrons, and the lone electrons are matched with the vacant electron orbitals of lead ions in the lead-based quantum dot, so as to form stable binding, thereby obtaining a coating layer made of the block polymer on the surface of the lead-based quantum dot.
In some embodiments, the block polymer is one or more of, but not limited to, polystyrene-poly (4-vinyl pyrimidine), poly 4-methylstyrene-poly (4-vinyl pyrimidine), and poly 3-methylstyrene-poly (4-vinyl pyrimidine), wherein the polystyrene-poly (4-vinyl pyrimidine) has a molecular structure of:
Figure BDA0002751957020000041
the lead-based quantum dots are one or more of lead sulfide, lead selenide and lead telluride, but are not limited thereto. In this embodiment, when the block polymer is polystyrene-poly (4-vinyl pyrimidine) and the lead-based quantum dot is lead sulfide, the polystyrene-poly (4-vinyl pyrimidine) matches the empty electron orbit of lead ions in the lead sulfide through lone electrons of nitrogen atoms in the poly (4-vinyl pyrimidine), so that the polystyrene-poly (4-vinyl pyrimidine) and the lead sulfide form a stable combination; in addition, the P4VP homopolymer can be combined with the surface trap state of the lead sulfide quantum dot to passivate the surface trap state; thereby obtaining a coating layer consisting of polystyrene-poly (4-vinyl pyridine) on the surface of the lead sulfide quantum dots. The coating layer is beneficial to the stability of the lead sulfide quantum dots, and the clusters of the lead sulfide quantum dots are reduced, so that the lead sulfide quantum dots with higher concentration are uniformly distributed, and the energy loss is reduced; and secondly, the coating layer can play a role in isolating water and oxygen, and the corrosion of water and oxygen molecules to the quantum dots can be effectively weakened by the hydrophobicity of the polystyrene in the coating layer and the coating layer structure, so that the luminous efficiency and the service life of the quantum dot light-emitting diode are improved.
In some embodiments, the quantum dot light emitting layer has a thickness of 10 to 60 nm.
In some embodiments, a quantum dot light emitting diode is provided, which includes a cathode, an anode, and a quantum dot light emitting layer disposed between the cathode and the anode, an electronic function layer disposed between the cathode and the quantum dot light emitting layer, and a hole function layer disposed between the anode and the quantum dot light emitting layer, wherein the quantum dot light emitting layer material includes a lead-based quantum dot and a block polymer coated on a surface of the lead-based quantum dot; the electron function layer is one or more of a hole blocking layer, an electron injection layer and an electron transport layer, and the hole function layer is one or more of an electron blocking layer, a hole injection layer and a hole transport layer, but is not limited thereto.
In some specific embodiments, there is provided a quantum dot light emitting diode with a positive structure, as shown in fig. 1, which includes an anode disposed on a surface of a substrate, a hole injection layer disposed on a surface of the anode, a hole transport layer disposed on a surface of the hole injection layer, a quantum dot light emitting layer disposed on a surface of the hole transport layer, an electron transport layer disposed on a surface of the quantum dot light emitting layer, and a cathode disposed on a surface of the electron transport layer, wherein the quantum dot light emitting layer material includes a lead-based quantum dot and a block polymer coated on a surface of the lead-based quantum dot.
In some embodiments, there is also provided an inverse quantum dot light emitting diode, as shown in fig. 2, which includes a cathode disposed on a surface of a substrate, an electron transport layer disposed on a surface of the cathode, a quantum dot light emitting layer disposed on a surface of the electron transport layer, a hole transport layer disposed on a surface of the quantum dot light emitting layer, a hole injection layer disposed on a surface of the hole transport layer, and an anode disposed on a surface of the hole injection layer, wherein the quantum dot light emitting layer material includes a lead-based quantum dot and a block polymer coated on a surface of the lead-based quantum dot.
In various embodiments of the present invention, the materials of the functional layers are materials commonly used in the art, such as:
in some embodiments, the substrate may be a rigid substrate (glass) or a flexible substrate.
In some embodiments, the anode can be ITO, FTO, or ZTO.
In some embodiments, the hole injection layer material can be water-soluble PEDOT PSS, or other materials with the ability to provide a hole injection layerMaterials with good hole injection properties, e.g. NiO, MoO3、WO3Or V2O5。
In some embodiments, the hole injection layer material is PEDOT: PSS, and has a thickness of 10-100 nm.
In some embodiments, the hole transport layer material may be commonly used Poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine) (TFB), Poly (N, N ' -bis (4-butylphenyl) -N, N ' -bis (phenyl) benzidine) (Poly-TPD), Poly (9, 9-dioctylfluorene-CO-bis-N, N-phenyl-1, 4-Phenylenediamine) (PFB), 4', 4 ″ -tris (carbazol-9-yl) triphenylamine (TCTA), 4' -bis (9-Carbazol) Biphenyl (CBP), N ' -diphenyl-N, N ' -bis (3-methylphenyl) -1,1 ' -biphenyl-4, one or more of 4' -diamine (TPD), N ' -diphenyl-N, N ' - (1-naphthyl) -1,1 ' -biphenyl-4, 4' -diamine (NPB), and other high-performance hole transport materials such as MoO3、WoO3NiO, CuO, V2O5, CuS, and the like.
In some embodiments, the hole transport layer has a thickness of 1 to 100 nm.
In some embodiments, the electron transport layer material is selected from materials with good electron transport properties, which may be, but is not limited to, n-type ZnO, TiO2、Fe2O3、Ta2O3One or more of AlZnO, ZnSnO and the like.
In some specific embodiments, the electron transport layer material is n-type ZnO with a thickness of 60-120 nm.
In some embodiments, the cathode can be Au, Ag, Al, Cu, Mo, or alloys thereof.
In some embodiments, there is also provided a method for preparing a quantum dot light emitting diode with a positive structure, as shown in fig. 3, including the steps of:
s10, providing an anode substrate, and preparing a hole transport layer on the anode substrate;
s20, mixing the lead-series quantum dot solution with the block polymer solution to coat the block polymer on the surface of the lead-series quantum dot to prepare a composite material solution;
s30, depositing the composite material solution on the surface of the hole transport layer to obtain a quantum dot light-emitting layer;
s40, preparing an electron transport layer on the surface of the quantum dot light-emitting layer;
and S50, preparing a cathode on the surface of the electron transport layer to obtain the quantum dot light-emitting diode.
In various embodiments of the present invention, the preparation method of each layer may be a chemical method or a physical method, wherein the chemical method includes, but is not limited to, one or more of a chemical vapor deposition method, a continuous ion layer adsorption and reaction method, an anodic oxidation method, an electrolytic deposition method, and a coprecipitation method; the physical method includes, but is not limited to, one or more of solution method (such as spin coating, printing, knife coating, dip-coating, dipping, spraying, roll coating, casting, slit coating, or bar coating), evaporation method (such as thermal evaporation, electron beam evaporation, magnetron sputtering, or multi-arc ion plating), deposition method (such as physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.).
In some embodiments, there is also provided a method for preparing an inversion-structure quantum dot light emitting diode, as shown in fig. 4, which includes the steps of:
s100, providing a cathode substrate, and preparing an electron transport layer on the cathode substrate;
s200, mixing a lead-series quantum dot solution with a block polymer solution to coat the block polymer on the surface of the lead-series quantum dot to prepare a composite material solution;
s300, depositing the composite material solution on the surface of the electron transport layer to prepare a quantum dot light-emitting layer;
s400, preparing a hole transport layer on the surface of the quantum dot light-emitting layer;
s500, preparing an anode on the surface of the hole transport layer to obtain the quantum dot light-emitting diode.
The following further explains the preparation method of a quantum dot light emitting diode according to the present invention by specific examples:
example 1
Firstly, placing a patterned ITO substrate in acetone, washing liquor, deionized water and isopropanol in sequence for ultrasonic cleaning, wherein each step of ultrasonic cleaning lasts for about 15 minutes. After the ultrasonic treatment is finished, the ITO is placed in a clean oven to be dried for standby, and after the ITO substrate is dried, the surface of the ITO is treated by ultraviolet-ozone for 5 minutes to further remove organic matters attached to the surface of the ITO and improve the work function of the ITO;
then, depositing a hole injection layer PEDOT, PSS, with the thickness of 30nm, on the ITO substrate processed in the previous step, and heating the substrate on a heating table at 150 ℃ for 30 minutes to remove moisture, wherein the step is completed in the air;
next, the dried substrate coated with the hole injection layer was placed in a nitrogen atmosphere, a layer of a hole transport layer material TFB was deposited, the thickness of this layer was 30nm, and the substrate was placed on a heating stage at 150 ℃ and heated for 30 minutes to remove the solvent;
preparing 2mg/ml chloroform solution from PS-P4VP, adding 1ml of the solution into 9ml of toluene solution of lead sulfide quantum dots to obtain modified lead sulfide quantum dots, drying to obtain powder, and dissolving the powder in toluene to obtain the quantum dot solution to be modified. After the wafer processed in the previous step is cooled, the modified quantum dot solution is spin-coated on the hole transport layer, and then the modified quantum dot solution is placed on a 1 multiplied by 10-3Pa for 2 hours in vacuum, the thickness is about 20nm, and a quantum dot light-emitting layer is prepared;
then, depositing a ZnO electron transmission layer on the surface of the quantum dot light-emitting layer, and after deposition, placing the wafer on a heating table at 80 ℃ to heat for 30 minutes, wherein the thickness of the wafer is 30 nm;
and finally, placing the sheets with the deposited functional layers in an evaporation bin, and thermally evaporating a layer of 100nm silver as a cathode through a mask plate, thereby completing the preparation of the device.
In summary, the quantum dot light emitting diode provided by the invention includes a quantum dot light emitting layer disposed between a cathode and an anode, and the quantum dot light emitting layer includes a lead-based quantum dot and a block polymer coated on a surface of the lead-based quantum dot. According to the invention, a block polymer is introduced into the lead-based quantum dot to modify the surface of the quantum dot nano-particles, so that a coating layer consisting of the block polymer is formed on the surface of the lead-based quantum dot. The block polymer is beneficial to the stability of the lead quantum dots, weakens the clusters of the lead quantum dots, reduces the Dexter energy transfer between the lead quantum dots and the energy loss, and thus can effectively improve the luminous efficiency of the quantum dot light-emitting diode; on the other hand, due to the existence of the structure of the hydrophobicity of the block polymer and the coating layer, the corrosion of water and oxygen can be weakened, and the luminous efficiency and the service life of the quantum dot light-emitting diode are improved.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.

Claims (10)

1. A quantum dot light-emitting diode comprises a cathode, an anode and a quantum dot light-emitting layer arranged between the cathode and the anode, and is characterized in that the quantum dot light-emitting layer comprises lead quantum dots and a block polymer coated on the surfaces of the lead quantum dots.
2. The quantum dot light-emitting diode of claim 1, wherein the quantum dot light-emitting layer material is composed of lead-based quantum dots and a block polymer coated on the surfaces of the lead-based quantum dots.
3. The quantum dot light-emitting diode of claim 1, wherein the block polymer is specifically bound to the lead-based quantum dot.
4. The quantum dot light-emitting diode of claim 1, wherein the block polymer contains lone electrons, and the block polymer is matched and combined with the vacant electron orbitals of lead ions in the lead-based quantum dots through the lone electrons.
5. The quantum dot light-emitting diode of claim 1, wherein the block polymer is one or more of polystyrene-poly (4-vinyl pyrimidine), poly 4-methylstyrene-poly (4-vinyl pyrimidine), and poly 3-methylstyrene-poly (4-vinyl pyrimidine).
6. The quantum dot light-emitting diode of claim 1, wherein the lead-based quantum dots are one or more of lead sulfide, lead selenide, and lead telluride.
7. The quantum dot light-emitting diode of claim 1, wherein the quantum dot light-emitting layer has a thickness of 10-60 nm.
8. A preparation method of a quantum dot light-emitting diode is characterized by comprising the following steps:
providing an anode substrate;
preparing a quantum dot light-emitting layer on the surface of the anode substrate, wherein the quantum dot light-emitting layer comprises lead quantum dots and a block polymer coated on the surfaces of the lead quantum dots;
preparing a cathode on the surface of the quantum dot light-emitting layer to prepare the quantum dot light-emitting diode;
alternatively, a cathode substrate is provided;
preparing a quantum dot light-emitting layer on the surface of the cathode substrate, wherein the quantum dot light-emitting layer material comprises lead quantum dots and a block polymer coated on the surfaces of the lead quantum dots;
and preparing an anode on the surface of the quantum dot light-emitting layer to obtain the quantum dot light-emitting diode.
9. The method of claim 8, wherein the block polymer is specifically bound to the lead-based quantum dot.
10. The method for preparing a quantum dot light-emitting diode according to claim 8, wherein the step of preparing the quantum dot light-emitting layer on the surface of the anode substrate comprises:
mixing a lead-series quantum dot solution and a block polymer solution to coat the block polymer on the surface of the lead-series quantum dot to prepare a composite material solution;
depositing the composite material solution on the surface of the anode substrate to prepare a quantum dot light-emitting layer;
or, the step of preparing the quantum dot light-emitting layer on the surface of the cathode substrate comprises the following steps:
mixing a lead-series quantum dot solution and a block polymer solution to coat the block polymer on the surface of the lead-series quantum dot to prepare a composite material solution;
and depositing the composite material solution on the surface of the cathode substrate to prepare the quantum dot light-emitting layer.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115377339A (en) * 2022-09-23 2022-11-22 闽都创新实验室 Method for preparing patterned QLED based on electrostatic adsorption quantum dots

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110020703A (en) * 2009-08-24 2011-03-03 한국기초과학지원연구원 Method of fabricating quantum dot
US20110227034A1 (en) * 2010-03-22 2011-09-22 Samsung Electronics Co., Ltd. Quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, light emitting device including the same, and fabrication method thereof
KR20140054535A (en) * 2012-10-29 2014-05-09 연세대학교 산학협력단 Electroluminescent layer with colloidal quantum dot hybrid, electroluminescent device with the layer and manufacturing method of the device
JP2015149230A (en) * 2014-02-07 2015-08-20 コニカミノルタ株式会社 organic electroluminescent panel
US20180331312A1 (en) * 2015-11-04 2018-11-15 Guangzhou Chinaray Optoelectronic Materials Ltd. Electroluminescent device, preparation method thereof, and ink formulation
KR101945128B1 (en) * 2017-11-08 2019-02-01 단국대학교 산학협력단 Quantum Dot Light Emitting Diode and Fabrication Method Thereof
US20190379001A1 (en) * 2018-06-11 2019-12-12 Korea Advanced Institute Of Science And Technology Quantum dot film having porous structure and manufacturing method for the same
CN111334279A (en) * 2018-12-19 2020-06-26 Tcl集团股份有限公司 Composite material and preparation method thereof
US20200308478A1 (en) * 2017-07-11 2020-10-01 Tcl Technology Group Corporation Quantum dot and preparation method thereof
US20200317997A1 (en) * 2017-12-26 2020-10-08 Tcl Technology Group Corporation Thin film and fabrication method therefor and qled device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110020703A (en) * 2009-08-24 2011-03-03 한국기초과학지원연구원 Method of fabricating quantum dot
US20110227034A1 (en) * 2010-03-22 2011-09-22 Samsung Electronics Co., Ltd. Quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, light emitting device including the same, and fabrication method thereof
KR20140054535A (en) * 2012-10-29 2014-05-09 연세대학교 산학협력단 Electroluminescent layer with colloidal quantum dot hybrid, electroluminescent device with the layer and manufacturing method of the device
JP2015149230A (en) * 2014-02-07 2015-08-20 コニカミノルタ株式会社 organic electroluminescent panel
US20180331312A1 (en) * 2015-11-04 2018-11-15 Guangzhou Chinaray Optoelectronic Materials Ltd. Electroluminescent device, preparation method thereof, and ink formulation
US20200308478A1 (en) * 2017-07-11 2020-10-01 Tcl Technology Group Corporation Quantum dot and preparation method thereof
KR101945128B1 (en) * 2017-11-08 2019-02-01 단국대학교 산학협력단 Quantum Dot Light Emitting Diode and Fabrication Method Thereof
US20200317997A1 (en) * 2017-12-26 2020-10-08 Tcl Technology Group Corporation Thin film and fabrication method therefor and qled device
US20190379001A1 (en) * 2018-06-11 2019-12-12 Korea Advanced Institute Of Science And Technology Quantum dot film having porous structure and manufacturing method for the same
CN111334279A (en) * 2018-12-19 2020-06-26 Tcl集团股份有限公司 Composite material and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115377339A (en) * 2022-09-23 2022-11-22 闽都创新实验室 Method for preparing patterned QLED based on electrostatic adsorption quantum dots

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