CN114447194A - Light emitting package and method of manufacturing the same - Google Patents
Light emitting package and method of manufacturing the same Download PDFInfo
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- CN114447194A CN114447194A CN202011217475.8A CN202011217475A CN114447194A CN 114447194 A CN114447194 A CN 114447194A CN 202011217475 A CN202011217475 A CN 202011217475A CN 114447194 A CN114447194 A CN 114447194A
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- light emitting
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- 239000000758 substrate Substances 0.000 claims description 62
- 239000012778 molding material Substances 0.000 claims description 46
- 150000001875 compounds Chemical class 0.000 claims description 10
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- 238000000465 moulding Methods 0.000 claims description 10
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- 230000003287 optical effect Effects 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000003566 sealing material Substances 0.000 claims description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
A light emitting package and a method of manufacturing the same. The light emitting package comprises a sealing element, a plurality of light emitting elements arranged in the sealing element, a plurality of first electrode pads, a plurality of second electrode pads and a plurality of conductive connection structures. The seal has a first surface and a second surface opposite to each other. Each light-emitting element is provided with a light-emitting surface exposed out of the first surface. The first electrode pad and the second electrode pad are both arranged in the sealing element and exposed on the second surface. Each first electrode pad has a first bonding surface aligned with the second surface. Each second electrode pad has a second bonding surface aligned with the second surface. The light emitting elements are respectively arranged on the first electrode pads and are electrically connected with the first electrode pads. The conductive connection structures penetrate through the sealing element and electrically connect the light-emitting elements and the second electrode pads. In addition, a method for manufacturing the light emitting package is also provided.
Description
Technical Field
The present invention relates to a semiconductor package and a method for manufacturing the same, and more particularly, to a light emitting package and a method for manufacturing the same.
Background
In a conventional method for manufacturing a Light Emitting Diode (LED) package, a plurality of LEDs are usually encapsulated by a molding compound (molding compound), wherein the molding compound needs to be cured so that the molding compound can protect the LEDs. After curing the molding compound, a circuit for electrically connecting the light emitting diode is usually formed, so that the light emitting diode can be electrically connected to an external power source through the circuit.
Before the circuit is fabricated, the cured molding material is usually removed from the mold or carrier plate. And then, drilling the solidified molding material to manufacture the circuit. However, when the cured molding material is removed from the mold or the carrier, the molding material may deform, i.e., the volume of the molding material may change, which may cause the light emitting diode therein to shift, such that the process parameters may need to be adjusted during the subsequent circuit fabrication. Otherwise, a subsequent circuit may not be electrically connected to the led, resulting in a circuit break, and the led package may need to be reworked or even scrapped.
Disclosure of Invention
At least one embodiment of the present invention provides a light emitting package capable of reducing or avoiding the offset of the light emitting diode.
At least one embodiment of the invention further provides a manufacturing method of the light emitting package.
At least one embodiment of the invention provides a light emitting package including a sealing member, a plurality of light emitting elements, a plurality of first electrode pads, a plurality of second electrode pads, and a plurality of conductive connection structures. The seal has a first surface and a second surface opposite the first surface. The light-emitting elements are respectively provided with a plurality of light-emitting surfaces and a plurality of back surfaces opposite to the light-emitting surfaces, wherein the light-emitting elements are arranged in the sealing member, and the light-emitting surfaces are exposed on the first surface. The first electrode pads are respectively provided with a plurality of first bonding surfaces and are arranged in the sealing element. The light-emitting elements are respectively arranged on the first electrode pads and are electrically connected with the first electrode pads, wherein the first joint surfaces are exposed on the second surface and are aligned with the second surface. The second electrode pads are respectively provided with a plurality of second joint surfaces and are arranged in the sealing element, wherein the second joint surfaces are exposed on the second surface and are aligned with the second surface. The conductive connection structures penetrate through the sealing element and electrically connect the light-emitting elements and the second electrode pads, so that each light-emitting element is electrically connected with one of the first electrode pads and one of the second electrode pads.
In at least one embodiment of the present invention, the light emitting devices are vertical light emitting diode dies.
In at least one embodiment of the present invention, each conductive connection structure includes a conductive pillar and a conductive layer. The conductive column penetrates through the sealing element and is connected with the second electrode pad. The conductive layer is formed on the first surface and is connected with the conductive column and the light-emitting element.
In at least one embodiment of the present invention, at least one conductive pillar is located between two adjacent light emitting elements.
In at least one embodiment of the present invention, the sealing member further has a plurality of connecting holes located on the first surface. The connection holes partially expose the light emitting elements, and the conductive layers extend from the first surface into the connection holes and connect the light emitting elements from the connection holes.
In at least one embodiment of the present invention, the light emitting package further includes a protection layer. The protective layer is formed on the second surface and has a plurality of openings. The openings expose the first joint surfaces and the second joint surfaces respectively.
In at least one embodiment of the present invention, the Optical Density (OD) of the sealing member is greater than 2.
In at least one embodiment of the present invention, the thermal conductivity of the sealing member is between 5 and 10 w/m-1Kelvin-1(W/(m·K))。
In at least one embodiment of the present invention, the sealing member further has a first thickness between the first surface and the second surface, and each of the light emitting elements further has a second thickness between the light emitting surface and the back surface, wherein the first thickness is greater than the second thickness, and a difference between the first thickness and the second thickness is between 5 micrometers and 50 micrometers.
In at least one embodiment of the present invention, a difference between the first thickness and the second thickness is between 25 micrometers and 50 micrometers.
At least one embodiment of the invention further provides a manufacturing method of the light emitting package. In the method, first, a plurality of first electrode pads and a plurality of second electrode pads are formed on a substrate. Then, a plurality of light emitting elements are respectively disposed on the first electrode pads, wherein the light emitting elements respectively have a plurality of light emitting surfaces and are respectively electrically connected to the first electrode pads. Then, a molding material is formed on the substrate, wherein the molding material covers the light emitting elements, the first electrode pads and the second electrode pads and is attached to the substrate. Patterning the mold sealing material on the substrate to form a sealing member having a plurality of blind holes and a plurality of light outlets, wherein the light outlets respectively expose the light-emitting surfaces, and the blind holes respectively expose the second electrode pads. And forming a plurality of conductive connection structures on the first surface and in the blind holes, wherein the conductive connection structures are electrically connected with the light-emitting elements and the second electrode pads, and the substrate still keeps complete during the formation of the conductive connection structures. After forming the conductive connection structures, at least a portion of the substrate is removed.
In at least one embodiment of the present invention, the substrate includes a rigid supporting board, a release layer (release layer), and an insulating layer. The release layer is formed on the rigid support plate. The insulating layer is formed on the release layer, wherein the first electrode pads and the second electrode pads are formed on the insulating layer. The method for removing at least a part of the substrate comprises stripping the release layer and the rigid support plate from the insulating layer to remove the release layer and the rigid support plate and keep the insulating layer.
In at least one embodiment of the present invention, after removing at least a portion of the substrate, a plurality of openings are formed in the insulating layer, wherein the openings respectively expose the first electrode pads and the second electrode pads.
In at least one embodiment of the present invention, the method of forming the openings includes exposing and developing the insulating layer.
In at least one embodiment of the present invention, the step of disposing the light emitting devices on the first electrode pads respectively includes connecting the light emitting devices to the first electrode pads respectively by using a plurality of conductive bonding materials.
In at least one embodiment of the present invention, the molding material is pressed on the substrate.
Based on the above, the conductive connection structures are formed before removing at least a portion of the substrate. In other words, the molding material and the sealing member are disposed and attached on the substrate before the conductive connection structures are formed, so that the positions of the light emitting elements on the substrate can be substantially kept unchanged, thereby reducing or avoiding the deviation of the light emitting elements. Therefore, in the process of patterning the molding material and forming the conductive connection structures, the process parameters can be adjusted without considering the offset of the light emitting element, thereby simplifying the manufacturing process and helping to shorten the time required for manufacturing the light emitting package.
Drawings
Fig. 1 to 7 are schematic cross-sectional flow diagrams illustrating a method for manufacturing a light emitting package according to at least one embodiment of the invention.
[ description of main element symbols ]
10: substrate 11: rigid support plate
12: a release layer 13: insulating layer
100: light emitting package 111: a first electrode pad
111 a: first engagement surface 112: second electrode pad
112 a: second engagement surface 120: light emitting element
121: light-emitting surface 122: back side of the panel
130: the seal 130 i: molding material
131: blind hole 132: light outlet
133: connection hole 134 a: first surface
134 b: second surface 140: conductive connection structure
141: conductive post 142: conductive layer
150: protective layer 151: opening of the container
A12: conductive adhesive material T12: second thickness
T13: a first thickness
Detailed Description
In the following description, the dimensions (e.g., length, width, thickness, and depth) of elements (e.g., layers, films, substrates, regions, etc.) in the figures are exaggerated in various proportions for the sake of clarity. Accordingly, the following description and illustrations of the embodiments are not limited to the sizes and shapes of elements shown in the drawings, but are intended to cover deviations in sizes, shapes and both that result from actual manufacturing processes and/or tolerances. For example, the planar surfaces shown in the figures may have rough and/or non-linear features, while the acute angles shown in the figures may be rounded. Therefore, the elements shown in the drawings are for illustrative purposes only, and are not intended to accurately depict the actual shapes of the elements or to limit the scope of the claims.
Furthermore, the terms "about", "approximately" or "substantially" as used herein encompass not only the explicitly recited values and ranges of values, but also the allowable range of deviation as understood by those of ordinary skill in the art, wherein the range of deviation can be determined by the error in measurement, for example, due to limitations of both the measurement system and the process conditions. Furthermore, "about" can mean within one or more standard deviations of the above-described values, e.g., within ± 30%, 20%, 10%, or 5%. The terms "about," "approximately," or "substantially," as used herein, may be selected with an acceptable range of deviation or standard deviation based on optical, etching, mechanical, or other properties, and not all such properties may be applied with one standard deviation alone.
Fig. 1 to 7 are schematic cross-sectional flow diagrams illustrating a method for manufacturing a light emitting package according to at least one embodiment of the invention, wherein fig. 7 illustrates a completed light emitting package 100. Referring to fig. 1, in the method for manufacturing the light emitting package of the present embodiment, first, a plurality of first electrode pads 111 and a plurality of second electrode pads 112 are formed on a substrate 10, wherein the first electrode pads 111 and the second electrode pads 112 may be arranged in an array.
The first electrode pad 111 and the second electrode pad 112 may be metal layers, and may be formed by deposition (deposition) and photolithography (photolithography), wherein the deposition may include electroless plating (electro plating) and electro plating (electro plating). Alternatively, Deposition may also include Physical Vapor Deposition (PVD) and electro-plating. Photolithography includes exposure, development, and etching.
A method of forming the first and second electrode pads 111 and 112 may include an additive process (additive process), a subtractive process (subtractive process), or a semi-additive process (semi-additive process). To illustrate by way of example, a thin metal layer may be formed on the substrate 10 as a seed layer by Physical Vapor Deposition (PVD), electroless plating, or electroplating.
Then, a patterned mask (not shown) is formed on the thin metal layer, wherein the patterned mask can be formed by exposing and developing a photoresist or a dry film (dry film). Next, metal is deposited on the portions of the thin metal layer (i.e., the seed layer) exposed by the patterned mask using electro-plating. Thereafter, the patterned mask is removed, and micro-etching (micro-etching) is performed to remove a portion of the thin metal layer originally covered by the patterned mask, thereby forming the first electrode pads 111 and the second electrode pads 112 separated from each other.
The substrate 10 may include a rigid support plate 11, a release layer 12, and an insulating layer 13. The rigid support plate 11 may be a textured plate, such as a glass, metal or ceramic plate. The release layer 12 is formed on the rigid support plate 11, and the insulating layer 13 is formed on the release layer 12, so that the release layer 12 is located between the insulating layer 13 and the rigid support plate 11.
The first electrode pads 111 and the second electrode pads 112 are formed on the insulating layer 13, wherein the first electrode pads 111 and the second electrode pads 112 can directly contact the insulating layer 13. In addition, the insulating layer 13 may be made of a photosensitive Dielectric material (PID material), so that the insulating layer 13 may have a photosensitive characteristic and may be patterned by exposure and development.
It should be noted that in the embodiment shown in fig. 1, the substrate 10 includes the rigid supporting board 11, the release layer 12 and the insulating layer 13, but in other embodiments, the insulating layer 13 may be replaced by a dielectric layer without photosensitive property. Alternatively, the substrate 10 may include only the rigid support plate 11, not the release layer 12 and the insulating layer 13, wherein the rigid support plate 11 may be a metal plate and may directly contact the first electrode pad 111 and the second electrode pad 112. In other words, the substrate 10 may be a rigid support plate 11 made of metal. The metal material of the rigid support plate 11 is different from the metal material of both the first electrode pad 111 and the second electrode pad 112. For example, the rigid support plate 11 may be made of copper, and both the first electrode pad 111 and the second electrode pad 112 may be made of nickel.
Referring to fig. 2, next, a plurality of light emitting elements 120 are respectively disposed on the first electrode pads 111. The light emitting elements 120 may be electrically connected to the first electrode pads 111 by using a plurality of conductive adhesive materials a12, wherein the conductive adhesive materials a12 may be solder, silver paste or copper paste, and can adhere the light emitting elements 120 and the first electrode pads 111, so that the light emitting elements 120 can be attached to (adhered) and electrically connected to the first electrode pads 111 one by one.
The light emitting elements 120 respectively have a plurality of light emitting surfaces 121 and a plurality of back surfaces 122 opposite to the light emitting surfaces 121. When the light emitting element 120 is powered on, the light emitting element 120 emits light from the light emitting surface 121. The conductive adhesive material a12 may be adhered to the back surface 122 of the light emitting device 120, and may directly contact the back surface 122. The light emitting devices 120 may all be vertical light emitting diode dies, so each light emitting device 120 may be an unpackaged chip and have an anode and a cathode (both not shown) on opposite sides.
For example, in one embodiment, the anode may be located on the back surface 122, and the cathode may be located on the light emitting surface 121. Of course, in other embodiments, the cathode may be located on the back surface 122, and the anode may be located on the light emitting surface 121. Therefore, the conductive adhesive material a12 adhered to the back surface 122 can be electrically connected to the anode or cathode of the light emitting device 120. Thus, the electrodes (i.e., the anode or the cathode) of the light emitting elements 120 are electrically connected to the first electrode pads 111 respectively by the conductive adhesive material a 12.
Referring to fig. 3, a molding material 130i is then formed on the substrate 10, wherein the molding material 130i covers the light emitting elements 120, the first electrode pads 111, and the second electrode pads 112, and is attached to the substrate 10, so that the light emitting elements 120, the first electrode pads 111, and the second electrode pads 112 are all disposed in the molding material 130i and embedded in the molding material 130 i. The molding material 130i may be formed by coating or laminating, wherein the molding material 130i formed by laminating is laminated on the substrate 10 and the light emitting element 120, the first electrode pad 111 and the second electrode pad 112 thereon.
The main material of the molding material 130i may be a polymer material, and the step of forming the molding material 130i includes curing (curing). For example, the molding material 130i may be cured by light irradiation or heat, wherein the light irradiation may be ultraviolet light to irradiate the molding material 130i to cure the molding material 130 i. During the process of curing the molding material 130i, the molding material 130i is always disposed and attached on the substrate 10 and is deformed. That is, the volume of the molding material 130i may change, for example, shrink.
When the molding material 130i on the substrate 10 is deformed, the molding material 130i adheres to the substrate 10, so that the substrate 10 and the molding material 130i not only have a bonding force (bonding force), but also generate stress. The bonding force and the rigidity of the substrate 10 resist the stress and the deformation of the molding material 130i, so as to prevent the deformed molding material 130i from moving the light emitting elements 120 and causing the light emitting elements 120 to shift. Therefore, the light emitting elements 120 are substantially fixed during curing of the molding material 130i by the bonding force and the substrate 10.
In this embodiment, the optical density of the molding material 130i may be greater than 2, so that the molding material 130i has a relatively low light transmittance, and the color of the molding material 130i may be black. In addition, the thermal conductivity of the molding material 130i may be between 5 and 10 Watt-meters-1Kelvin-1. Therefore, the molding material 130i has good thermal conductivity, so that the molding material 130i can rapidly transmit and discharge the heat generated by the light emitting elements 120, thereby preventing the light emitting elements 120 from overheating due to the accumulation of heat.
Referring to fig. 3 and fig. 4, next, the molding compound 130i on the substrate 10 is patterned to form a sealing member 130 having a plurality of blind holes 131 and a plurality of light outlets 132. The sealing member 130 further has a first surface 134a and a second surface 134b opposite to the first surface 134a, wherein the light outlets 132 are formed on the first surface 134a and respectively expose the light emitting surfaces 121 of the light emitting elements 120, that is, the light emitting surfaces 121 are all exposed on the first surface 134 a. The blind holes 131 extend from the first surface 134a to the second surface 134b, and expose the second electrode pads 112, respectively. In addition, the sealing member 130 may further have a plurality of connection holes 133 located on the first surface 134a, wherein the connection holes 133 partially expose the light emitting elements 120 and further expose the electrodes (i.e., the anode or the cathode) located on the light emitting surface 121.
The method of patterning the molding material 130i may be photolithography or laser ablation. In other words, the blind holes 131, the light outlets 132 and the connection holes 133 can be formed by etching or laser ablation. When the method of patterning the molding compound 130i is photolithography, the blind hole 131, the light outlet 132 and the connection hole 133 may be formed in the same etching process. In other words, the blind hole 131, the light outlet 132, and the connection hole 133 may be formed substantially simultaneously. In addition, since the optical density of the molding material 130i may be greater than 2, the thermal conductivity of the molding material 130i may be between 5 and 10 W.m-1Kelvin-1Therefore, the optical density of the sealing member 130 may be greater than 2, and the thermal conductivity of the sealing member 130 may be between 5 and 10 W.m-1Kelvin-1。
The molding material 130i is disposed and attached on the substrate 10 at all times during the patterning of the molding material 130i, so that the positions of the light emitting elements 120 on the substrate 10 can be substantially maintained. Therefore, in the process of patterning the molding material 130i, the process parameters can be adjusted without considering the offset of the light emitting device 120. For example, the mask pattern and position may be changed or the position of the laser beam may be adjusted without matching the offset of the light emitting device 120. Thus, the manufacturing process can be simplified, and the yield can be improved.
Referring to fig. 5, a plurality of conductive connection structures 140 are formed on the first surface 134a and the blind holes 131, wherein the conductive connection structures 140 penetrate through the sealing member 130 and electrically connect the light emitting elements 120 and the second electrode pads 112, so that each light emitting element 120 can be electrically connected to one of the first electrode pads 111 and one of the second electrode pads 112. Thus, the external power source can input current from the first electrode pad 111 and the second electrode pad 112 to the light emitting element 120, so that the light emitting element 120 emits light.
Each conductive connection structure 140 may include a conductive pillar 141 and a conductive layer 142. The conductive pillar 141 penetrates the sealing member 130 and connects to the second electrode pad 112, wherein the conductive pillar 141 may be a conductive blind via structure, and the conductive pillar 141 may be a solid metal pillar or a hollow metal pillar (as shown in fig. 5). The conductive layers 142 may be formed on the first surface 134a and connect the conductive posts 141 and the light emitting element 120, wherein each of the conductive layers 142 may extend from the first surface 134a into the connection hole 133 and connect one of the electrodes (i.e., the anode or the cathode) of the light emitting element 120 from the connection hole 133. In addition, in the present embodiment, at least one conductive pillar 141 may be located between two adjacent light emitting elements 120, as shown in fig. 5.
Methods for forming the conductive connection structures 140 may include deposition and photolithography, wherein the deposition may include electroless plating and electro-plating. During the formation of the conductive connection structures 140, the substrate 10 still remains intact, and the sealing member 130 is still disposed and attached on the substrate 10, so that the positions of the light emitting elements 120 on the substrate 10 still remain substantially unchanged. Therefore, in the process of forming the conductive connection structures 140, the process parameters can be adjusted without considering the offset of the light emitting device 120. For example, the mask pattern and position may not be changed in accordance with the shift of the light emitting device 120.
Therefore, before the conductive connection structures 140 are formed, the molding material 130i and the sealing member 130 are disposed and attached on the substrate 10, so that the positions of the light emitting elements 120 on the substrate 10 can be substantially kept unchanged. Therefore, in the process of patterning the molding compound 130i and forming the conductive connection structures 140, the process parameters can be adjusted without considering the offset of the light emitting device 120, so that the manufacturing process can be simplified, the time required for manufacturing the light emitting package can be shortened, and the yield can be improved.
Referring to fig. 5 and 6, after the conductive connection structures 140 are formed, at least a portion of the substrate 10 is removed. The method for removing at least a portion of the substrate 10 in this embodiment may be peeling, in which the release layer 12 and the rigid supporting board 11 are peeled off from the insulating layer 13 to remove the release layer 12 and the rigid supporting board 11, and the insulating layer 13 is remained. In addition, in addition to lift-off, in other embodiments, the method of removing the substrate 10 may be etching.
Specifically, since the substrate 10 may only include the rigid support plate 11 made of metal and may directly contact the first electrode pad 111 and the second electrode pad 112, and the metal material (e.g., copper) of the rigid support plate 11 is different from the metal material (e.g., nickel) of both the first electrode pad 111 and the second electrode pad 112, an etchant (e.g., sodium hydroxide) that substantially etches only the rigid support plate 11 but not the first electrode pad 111 and the second electrode pad 112 may be selected to completely remove the substrate 10. Therefore, the method for removing the substrate 10 is not limited to peeling, and the substrate 10 can be partially or completely removed, so the removal of the substrate 10 is not limited to fig. 5 and 6.
Referring to fig. 6 and 7, after removing at least a portion of the substrate 10, a plurality of openings 151 may be formed in the insulating layer 13 to form a protection layer 150 on the second surface 134 b. Therefore, the protective layer 150 is formed of the insulating layer 13. The openings 151 expose the first bonding surfaces 111a of the first electrode pads 111 and the second bonding surfaces 112a of the second electrode pads 112, respectively. To this end, a light emitting package 100 including a plurality of first electrode pads 111, a plurality of second electrode pads 112, a plurality of light emitting elements 120, a sealing member 130, a plurality of conductive connection structures 140 and a protection layer 150 is generally manufactured, wherein the light emitting elements 120 may be embedded in the sealing member 130.
The first bonding surface 111a and the second bonding surface 112a can be connected with solder and mounted (mounted) on a circuit board or a carrier board through the solder, so that the light emitting package 100 can be electrically connected with the circuit board or the carrier board. In addition, at least one wiring layer may be formed on the first bonding surface 111a and the second bonding surface 112 a. For example, one or more circuit layers may be formed on the second surface 134b of the sealing member 130 by a build-up process, wherein the circuit layers electrically connect the first electrode pads 111 and the second electrode pads 112 to re-route the first electrode pads 111 and the second electrode pads 112.
Since the insulating layer 13 may have photosensitive characteristics, the method of forming the openings 151 may be to expose and develop the insulating layer 13. In addition, in other embodiments, the insulating layer 13 may not have photosensitive characteristics, and thus the method for forming the openings 151 may also be laser ablation. Therefore, the method of forming these openings 151 is not limited to exposure and development.
The sealing member 130 further has a first thickness T13 between the first surface 134a and the second surface 134b, and each of the light emitting elements 120 further has a second thickness T12 between the light emitting surface 121 and the back surface 122. As seen from fig. 7, the first thickness T13 is greater than the second thickness T12, and the overall thickness of the light emitting package 100 corresponds to the first thickness T13 of the sealing member 130.
The light emitting elements 120 may be sub-millimeter light emitting diodes (mini-LEDs) or micro-LEDs (μ LEDs). When the light emitting device 120 is a sub-millimeter light emitting diode, the second thickness T12 of the light emitting device 120 may be between 50 micrometers and 200 micrometers, and the first thickness T13 of the sealing member 130 may be between 75 micrometers and 250 micrometers, wherein a difference between the first thickness T13 and the second thickness T12 may be between 25 micrometers and 50 micrometers.
When the light emitting device 120 is a micro light emitting diode, the second thickness T12 of the light emitting device 120 may be between 5 micrometers and 50 micrometers, and the first thickness T13 of the sealing member 130 may be between 10 micrometers and 100 micrometers, wherein the difference between the first thickness T13 and the second thickness T12 may be between 5 micrometers and 50 micrometers. Therefore, the light emitting package 100 can have a relatively thin overall thickness, which is advantageous for being applied to thin displays such as the display screens of the present computers, televisions and mobile devices.
It should be noted that the above range of the first thickness T13, the range of the second thickness T12, and the range of the difference between the first thickness T13 and the second thickness T12 are only provided for illustration. In other embodiments, the first thickness T13, the second thickness T12, and the difference between the first thickness T13 and the second thickness T12 may have other ranges. For example, the difference between the first thickness T13 and the second thickness T12 may exceed 50 microns. Alternatively, the first thickness T13 may exceed 100 microns. Therefore, the above numerical ranges do not limit the range of the first thickness T13, the range of the second thickness T12, and the range of the difference between the first thickness T13 and the second thickness T12.
In the light emitting package 100 shown in fig. 7, the first electrode pads 111 respectively have a plurality of first bonding surfaces 111a and are disposed in the sealing member 130, wherein the first bonding surfaces 111a are exposed on the second surface 134b and are aligned with the second surface 134 b. Similarly, the second electrode pads 112 respectively have a plurality of second bonding surfaces 112a and are disposed in the sealing member 130, wherein the second bonding surfaces 112a are exposed on the second surface 134b and are aligned with the second surface 134 b.
It should be noted that, since the protection layer 150 is formed by the insulating layer 13, in other embodiments, the substrate 10 may not include the insulating layer 13, and therefore, the light emitting package 100 may not include the protection layer 150. In other words, in the light emitting package 100 shown in fig. 7, the protective layer 150 may be omitted. Therefore, the light emitting package 100 is not limited to include the protective layer 150.
In addition, the light emitting elements 120 may be a plurality of red light emitting diodes, a plurality of green light emitting diodes, and a plurality of blue light emitting diodes, so that the light emitting elements 120 can emit red light, green light, and blue light from the light emitting surface 121 to enable the light emitting package 100 to display an image. Therefore, the light emitting package 100 can be used to fabricate a display, particularly a thin display.
In addition, the light emitting devices 120 may also emit light of the same color, such as white light or blue light, and the light emitting package 100 may be combined with a color filter array substrate, wherein the color filter array substrate may convert the color of the light emitted by the light emitting devices 120 by filtering or fluorescence to generate red light, green light, and blue light, so as to enable the light emitting package 100 to display an image.
In summary, since the conductive connection structure is formed before at least a portion of the substrate is removed, the position of the light emitting devices on the substrate can be substantially unchanged during the patterning of the molding compound and the formation of the conductive connection structure, so as to reduce or avoid the shift of the light emitting devices. Therefore, the manufacturing process parameters can be adjusted without considering the deviation of the light-emitting element basically, the manufacturing flow is simplified, the time for manufacturing the light-emitting packaging body is shortened, and the yield is improved.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (16)
1. A light emitting package, comprising:
a seal having a first surface and a second surface opposite the first surface;
a plurality of light-emitting elements respectively having a plurality of light-emitting surfaces and a plurality of back surfaces opposite to the light-emitting surfaces, wherein the light-emitting elements are disposed in the sealing member, and the light-emitting surfaces are exposed on the first surface;
a plurality of first electrode pads, each having a plurality of first bonding surfaces, disposed in the sealing member, and the light emitting elements disposed on the first electrode pads and electrically connected to the first electrode pads, wherein the first bonding surfaces are exposed on the second surface and aligned with the second surface;
a plurality of second electrode pads, each having a plurality of second bonding surfaces, disposed in the sealing member, wherein the second bonding surfaces are exposed on the second surface and aligned with the second surface; and
and the plurality of conductive connection structures penetrate through the sealing piece and are electrically connected with the light-emitting elements and the second electrode pads, so that each light-emitting element is electrically connected with one of the first electrode pads and one of the second electrode pads.
2. The light emitting package as claimed in claim 1, wherein the light emitting devices are vertical light emitting diode dies.
3. The light emitting package as claimed in claim 1, wherein each of the conductive connection structures comprises:
a conductive post penetrating the sealing member and connected to the second electrode pad; and
and the conducting layer is formed on the first surface and is connected with the conducting post and the light-emitting element.
4. The light emitting package as claimed in claim 3, wherein at least one of the conductive pillars is located between two adjacent light emitting elements.
5. The light emitting package as claimed in claim 3, wherein the sealing member further has a plurality of connection holes on the first surface, the connection holes partially exposing the light emitting elements, and each of the conductive layers extends from the first surface into the connection hole and connects the light emitting elements from the connection hole.
6. The light emitting package as claimed in claim 1, further comprising:
and the protective layer is formed on the second surface and is provided with a plurality of openings, and the openings respectively expose the first joint surface and the second joint surface.
7. The light emitting package as set forth in claim 1, wherein the encapsulant has an optical density greater than 2.
8. The light emitting package as set forth in claim 1, wherein the encapsulant has a thermal conductivity of 5 to 10 Watt-meters-1Kelvin-1。
9. The light emitting package as claimed in claim 1, wherein the sealing member further has a first thickness between the first surface and the second surface, and each of the light emitting elements further has a second thickness between the light emitting surface and the back surface, wherein the first thickness is greater than the second thickness, and a difference between the first thickness and the second thickness is between 5 microns and 50 microns.
10. The light emitting package as claimed in claim 9, wherein a difference between the first thickness and the second thickness is between 25 microns and 50 microns.
11. A method of fabricating a light emitting package, comprising:
forming a plurality of first electrode pads and a plurality of second electrode pads on a substrate;
disposing a plurality of light-emitting elements on the first electrode pads, wherein the light-emitting elements have a plurality of light-emitting surfaces and are electrically connected to the first electrode pads respectively;
forming a molding material on the substrate, wherein the molding material covers the light emitting element, the first electrode pad and the second electrode pad, and is attached to the substrate;
patterning the mold sealing material on the substrate to form a sealing member having a plurality of blind holes and a plurality of light outlets, wherein the light outlets respectively expose the light-emitting surfaces, and the blind holes respectively expose the second electrode pads;
forming a plurality of conductive connection structures on the first surface and in the blind holes, wherein the conductive connection structures electrically connect the light-emitting elements and the second electrode pads, and the substrate remains intact during the formation of the conductive connection structures; and
after forming the conductive connection structure, removing at least a portion of the substrate.
12. The method of claim 11, wherein the substrate comprises:
a rigid support plate;
the release layer is formed on the rigid support plate; and
the insulating layer is formed on the release layer, wherein the first electrode pad and the second electrode pad are formed on the insulating layer, and the method for removing at least a part of the substrate comprises peeling the release layer and the rigid support plate from the insulating layer to remove the release layer and the rigid support plate and keep the insulating layer.
13. The method of claim 12, further comprising forming a plurality of openings in the insulating layer after removing at least a portion of the substrate, wherein the openings expose the first electrode pad and the second electrode pad, respectively.
14. The method of claim 13, wherein the step of forming the opening comprises exposing and developing the insulating layer.
15. The method as claimed in claim 11, wherein the step of disposing the light emitting devices on the first electrode pads respectively comprises electrically connecting the light emitting devices to the first electrode pads respectively by using a plurality of conductive adhesive materials.
16. The method of claim 11, wherein the molding compound is pressed onto the substrate.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090113223A (en) * | 2008-04-25 | 2009-10-29 | 삼성전자주식회사 | Luminous devices, packages and systems containing the same, and fabricating methods thereof |
| CN105098027A (en) * | 2014-05-14 | 2015-11-25 | 新世纪光电股份有限公司 | Light emitting element packaging structure and manufacturing method thereof |
| US20180102348A1 (en) * | 2016-10-06 | 2018-04-12 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method of producing an optoelectronic component |
| TW201937763A (en) * | 2018-02-21 | 2019-09-16 | 華立捷科技股份有限公司 | Package structure and package method of a light-emitting chip |
| US20200135997A1 (en) * | 2018-10-31 | 2020-04-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Device and Method |
| CN111199924A (en) * | 2018-11-16 | 2020-05-26 | 恒劲科技股份有限公司 | Semiconductor packaging structure and manufacturing method thereof |
| CN111384079A (en) * | 2018-12-27 | 2020-07-07 | 乐金显示有限公司 | Display device |
-
2020
- 2020-11-04 CN CN202011217475.8A patent/CN114447194B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090113223A (en) * | 2008-04-25 | 2009-10-29 | 삼성전자주식회사 | Luminous devices, packages and systems containing the same, and fabricating methods thereof |
| CN105098027A (en) * | 2014-05-14 | 2015-11-25 | 新世纪光电股份有限公司 | Light emitting element packaging structure and manufacturing method thereof |
| US20180102348A1 (en) * | 2016-10-06 | 2018-04-12 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method of producing an optoelectronic component |
| TW201937763A (en) * | 2018-02-21 | 2019-09-16 | 華立捷科技股份有限公司 | Package structure and package method of a light-emitting chip |
| US20200135997A1 (en) * | 2018-10-31 | 2020-04-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Device and Method |
| CN111199924A (en) * | 2018-11-16 | 2020-05-26 | 恒劲科技股份有限公司 | Semiconductor packaging structure and manufacturing method thereof |
| CN111384079A (en) * | 2018-12-27 | 2020-07-07 | 乐金显示有限公司 | Display device |
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