CN114447182B - Light emitting diode transfer method, light emitting substrate and display panel - Google Patents
Light emitting diode transfer method, light emitting substrate and display panel Download PDFInfo
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- CN114447182B CN114447182B CN202210059892.7A CN202210059892A CN114447182B CN 114447182 B CN114447182 B CN 114447182B CN 202210059892 A CN202210059892 A CN 202210059892A CN 114447182 B CN114447182 B CN 114447182B
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- 239000000758 substrate Substances 0.000 title claims abstract description 231
- 238000000034 method Methods 0.000 title claims abstract description 42
- 230000000712 assembly Effects 0.000 claims abstract description 54
- 238000000429 assembly Methods 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 23
- 230000001052 transient effect Effects 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 14
- 239000003292 glue Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 230000004308 accommodation Effects 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68313—Auxiliary support including a cavity for storing a finished device, e.g. IC package, or a partly finished device, e.g. die, during manufacturing or mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The application discloses a transfer method of a light emitting diode, a light emitting substrate and a display panel. The transfer method of the light emitting diode comprises the following steps: providing a target substrate, wherein the target substrate comprises a target substrate and a retaining wall arranged on one side of the target substrate, and a plurality of accommodating grooves are formed in the retaining wall; providing a plurality of light emitting diode assemblies, wherein each light emitting diode assembly comprises a bearing substrate and a light emitting diode arranged on one side of the bearing substrate; placing a plurality of light-emitting diode assemblies on a target substrate, wherein a light-emitting diode assembly is correspondingly arranged in a containing groove, and one side of the light-emitting diode assembly, which is provided with a bearing substrate, is away from the target substrate; the carrier substrate is removed. According to the application, on the premise of not using the adhesive as the temporary fixing material of the LED, the huge transfer of the LED is realized, and the luminous performance of the LED is improved.
Description
Technical Field
The application relates to the technical field of display, in particular to a transfer method of a light emitting diode, a light emitting substrate and a display panel.
Background
Phosphors in Micro Light-Emitting diodes (Micro LEDs) are attracting attention because of their high luminous efficiency, long life and high reliability. In the mass transfer process of Micro LEDs, the Micro LEDs are first separated from the growth substrate and then transferred to the target substrate. At present, when a laser peeling device is used for separating a Micro LED from a growth substrate, an ultraviolet curing glue or a glue material such as a pyrolysis glue is generally required to be used as a temporary fixing material of the Micro LED, but when the glue material is used as the temporary fixing material, glue residues exist on the surface of the Micro LED after the Micro LED is transferred, and therefore the light emitting performance of the Micro LED is affected.
Disclosure of Invention
The embodiment of the application provides a transfer method of a light-emitting diode, a light-emitting substrate and a display panel, which realize massive transfer of LEDs on the premise of not using a glue material as a temporary fixing material of the LEDs so as to improve the light-emitting performance of the LEDs.
The embodiment of the application provides a transfer method of a light emitting diode, which comprises the following steps:
providing a target substrate, wherein the target substrate comprises a target substrate and a retaining wall arranged on one side of the target substrate, and a plurality of accommodating grooves are formed in the retaining wall;
providing a plurality of light emitting diode assemblies, wherein each light emitting diode assembly comprises a bearing substrate and a light emitting diode arranged on one side of the bearing substrate;
placing a plurality of light emitting diode assemblies on the target substrate, wherein one light emitting diode assembly is correspondingly arranged in one accommodating groove, and one side of the light emitting diode assembly provided with the bearing substrate is away from the target substrate;
and removing the bearing substrate.
Optionally, in some embodiments of the present application, after the plurality of light emitting diode assemblies are disposed on the target substrate, a distance from a side of the light emitting diode facing away from the target substrate to the target substrate is greater than or equal to a depth of the accommodating groove.
Optionally, in some embodiments of the present application, after the plurality of led modules are disposed on the target substrate, a horizontal cross-sectional area of the carrier substrate is greater than an orthographic projection area of a groove wall of the accommodating groove on a plane of the target substrate.
Optionally, in some embodiments of the present application, a portion of a groove wall of the accommodating groove away from the target substrate is provided with a recess; a first electrode and a second electrode are arranged on one side, far away from the bearing substrate, of the light-emitting diode, the bearing substrate is provided with a first end part corresponding to the first electrode, and the first end part extends from one end of the light-emitting diode to a direction far away from the second electrode;
after placing the plurality of light emitting diode assemblies on the target substrate, the first end extends into the recess.
Optionally, in some embodiments of the present application, the carrier substrate further has a second end corresponding to the second electrode, the second end being flush with an end of the light emitting diode remote from the first electrode.
Optionally, in some embodiments of the present application, the accommodating groove includes a first accommodating groove, a second accommodating groove, and a third accommodating groove, where the first accommodating groove is provided with the first concave portion on a portion of a groove wall of the first accommodating groove away from the target substrate, the second accommodating groove is provided with the second concave portion on a portion of the groove wall of the second accommodating groove away from the target substrate, the third accommodating groove is provided with the third concave portion on a portion of the groove wall of the third accommodating groove away from the target substrate, and orthographic projection areas of the first concave portion, the second concave portion, and the third concave portion on a plane parallel to the target substrate sequentially decrease; the plurality of light emitting diode assemblies comprise a plurality of first color light emitting diode assemblies, a plurality of second color light emitting diode assemblies and a plurality of third color light emitting diode assemblies;
after the plurality of light emitting diode assemblies are placed on the target substrate, a first end of the first color light emitting diode assembly extends into the first recess, a first end of the second color light emitting diode assembly extends into the second recess, and a first end of the third color light emitting diode assembly extends into the third recess.
Optionally, in some embodiments of the present application, the step of providing a plurality of light emitting diode assemblies includes:
providing a growth substrate, wherein the growth substrate comprises a growth substrate and a wafer arranged on one side of the growth substrate, and a plurality of electrode groups are arranged on one side of the wafer away from the growth substrate;
stripping the growth substrate;
forming a transient substrate on one side of the wafer away from the electrode group;
and cutting the wafer and the transient substrate, wherein the part of the wafer provided with the electrode group is formed into the light-emitting diode, and the part of the transient substrate corresponding to the light-emitting diode is formed into the bearing substrate.
Optionally, in some embodiments of the present application, the material of the carrier substrate and the material of the retaining wall are both organic photoresist, and the step of removing the carrier substrate includes: and stripping the bearing substrate and the retaining wall.
The embodiment of the application also provides a light-emitting substrate, which comprises a driving substrate and a plurality of light-emitting diodes arranged on one side of the driving substrate, wherein the light-emitting diodes are obtained by transferring the light-emitting diodes according to any one of the previous embodiments.
The embodiment of the application also provides a display panel, which comprises the light-emitting substrate in the previous embodiment.
In the method for transferring the light emitting diode provided by the application, the retaining wall is preset in the target substrate, the plurality of accommodating grooves are formed in the retaining wall, each light emitting diode component comprises the bearing substrate arranged at one side of the light emitting diode, when the plurality of light emitting diode components are arranged on the target substrate, the light emitting diode components entering the accommodating grooves are separated from the target substrate due to the fact that one side of the light emitting diode component provided with the bearing substrate is separated from the bearing substrate, and the light emitting diode is separated from the bearing substrate by removing the bearing substrate, so that the transfer of the light emitting diode can be completed on the premise that the adhesive material is not used as a light emitting diode temporary fixing material, and the light emitting performance of the light emitting diode is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flow chart illustrating a method for transferring a light emitting diode according to an embodiment of the present application.
Fig. 2A to fig. 2H are schematic structural diagrams sequentially obtained in each step in a transfer method of a light emitting diode according to an example of the present application.
Fig. 3A to 3C are schematic structural diagrams sequentially obtained from S1, S25, and S3 in the transfer method of the light emitting diode according to the second embodiment of the present application.
Fig. 4A to 4C are schematic structural diagrams sequentially obtained from S1, S25, and S3 in the transfer method of the light emitting diode according to the third embodiment of the present application.
Fig. 5 is a schematic structural diagram of a light emitting substrate according to an embodiment of the present application.
Fig. 6 is a schematic structural diagram of a display panel according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application. Furthermore, it should be understood that the detailed description is presented herein for purposes of illustration and description only, and is not intended to limit the application. In the present application, unless otherwise indicated, terms of orientation such as "upper" and "lower" are used to generally refer to the upper and lower positions of the device in actual use or operation, and specifically the orientation of the drawing figures; while "inner" and "outer" are for the outline of the device.
The application provides a transfer method of a light emitting diode, a light emitting substrate and a display panel. The following will describe in detail.
It should be noted that, the Light Emitting Diode in the present application may be a Micro LED or a Mini Light Emitting Diode (Mini LED), and the type of the Light Emitting Diode is not particularly limited in the present application.
The application provides a transfer method of a light emitting diode, which comprises the following steps:
providing a target substrate, wherein the target substrate comprises a target substrate and a retaining wall arranged on one side of the target substrate, and a plurality of accommodating grooves are formed in the retaining wall;
providing a plurality of light emitting diode assemblies, wherein each light emitting diode assembly comprises a bearing substrate and a light emitting diode arranged on one side of the bearing substrate;
placing a plurality of light-emitting diode assemblies on a target substrate, wherein a light-emitting diode assembly is correspondingly arranged in a containing groove, and one side of the light-emitting diode assembly, which is provided with a bearing substrate, is away from the target substrate;
the carrier substrate is removed.
In the method for transferring the light emitting diode provided by the application, the retaining wall is preset in the target substrate, the plurality of accommodating grooves are formed in the retaining wall, each light emitting diode component comprises the bearing substrate arranged on one side of the light emitting diode, and after the plurality of light emitting diode components are arranged on the target substrate, the side, provided with the bearing substrate, of the light emitting diode components entering the accommodating grooves faces away from the target substrate, so that the light emitting diode is separated from the bearing substrate by removing the bearing substrate, and the transfer of the light emitting diode can be completed on the premise that the adhesive material is not used as a temporary fixing material of the light emitting diode, so that the light emitting performance of the light emitting diode is improved.
The following describes in detail a method for transferring the light emitting diode according to the present application through specific embodiments. The following description of the embodiments is not intended to limit the preferred embodiments.
Referring to fig. 1 and fig. 2A to fig. 2H, an exemplary embodiment of a method for transferring a light emitting diode includes the following steps:
s1: a target substrate 10 is provided, the target substrate 10 includes a target base 11 and a retaining wall 12 disposed on one side of the target base 11, and a plurality of accommodating grooves 121 are formed in the retaining wall 12, as shown in fig. 2A.
The target substrate 11 may be a driving substrate, which includes a thin film transistor (not shown in the figure) for driving the light emitting diode 22 to emit light, and the related art is not described herein.
The target substrate 10 further includes a plurality of pad groups 13 disposed on the target base 11. A pad group 13 is correspondingly disposed in a receiving groove 121. The thickness of the pad group 13 is smaller than the depth of the receiving groove 121. Each pad group 13 includes a positive polarity pad 131 and a negative polarity pad 132. Wherein, positive polarity pad 131 is used for being connected with the positive pole of light emitting diode 22, and negative polarity pad 132 is used for being connected with the negative pole of light emitting diode 22.
Specifically, the material of the retaining wall 12 may be an organic material, such as an organic photoresist. Since the photoresist can be removed by lift-off, the above arrangement can facilitate removal of the barrier wall 12 after the subsequent transfer of the light emitting diode 22 by using an organic photoresist as the material of the barrier wall 12. It should be noted that, in some embodiments, the material of the retaining wall 12 may be an inorganic material, such as silicon nitride, silicon oxide, or silicon oxynitride, which will not be described herein.
In the present embodiment, after forming the pad group 13 on the target substrate 11, the preparation of the retaining wall 12 is performed. Specifically, the retaining wall 12 may be formed by using a photolithography process, which is not described herein.
S2: a plurality of light emitting diode assemblies 20 are provided, each light emitting diode assembly 20 including a carrier substrate 21 and a light emitting diode 22 disposed at one side of the carrier substrate 21.
Specifically, step S2 includes:
s21: a growth substrate 201 is provided, the growth substrate 201 comprising a growth substrate 20a and a wafer 22a arranged on a side of the growth substrate 20a, the side of the wafer 22a facing away from the growth substrate 20a being provided with a plurality of electrode sets 221, as shown in fig. 2B.
The growth substrate 20a may be a sapphire substrate or a gallium arsenide substrate. The specific type of growth substrate 20a may be selected based on the type of light emitting diode 22 after dicing of the wafer 22 a. For example, when the light emitting diode 22 is a red light emitting diode, the growth substrate 20a may be a gallium arsenide substrate; when the light emitting diode 22 is a green light emitting diode or a blue light emitting diode, the growth substrate 20a may be a sapphire substrate.
Specifically, each electrode group 221 includes a first electrode 221a and a second electrode 221b, where the first electrode 221a may be a positive electrode of the light emitting diode 22, and the second electrode 221b may be a negative electrode of the light emitting diode 22.
S22: the growth substrate 20a is peeled off as shown in fig. 2C.
S23: a transient substrate 21a is formed on the side of the wafer 22a facing away from the electrode set 221, as shown in fig. 2D.
Specifically, after the wafer 22a is inverted, a coating, spray or spin process is used to form a full-face transient substrate 21a on the surface of the wafer 22 a. The material of the transient substrate 21a may be an organic photoresist.
S24: the wafer 22a is diced, and a portion of the wafer 22a corresponding to one electrode group 221 is formed as a light emitting diode 22, as shown in fig. 2E.
S25: the transient substrate 21a is cut, a portion of the transient substrate 21a corresponding to the light emitting diode 22 is formed as a carrier substrate 21, and the light emitting diode 22 and the corresponding carrier substrate 21 constitute a light emitting diode assembly 20, as shown in fig. 2F.
Wherein the horizontal cross-sectional area of the carrier substrate 21 is larger than the horizontal cross-sectional area of the light emitting diode 22. Specifically, the carrier substrate 21 has a first end 211 corresponding to the first electrode 221a and a second end 212 corresponding to the second electrode 221b. In the horizontal direction, one end of the first end portion 211 of the light emitting diode 22 extends in a direction away from the second electrode 221b, and the other end of the second end portion 212 of the light emitting diode 22 extends in a direction away from the first electrode 221 a.
S3: the plurality of led assemblies 20 are disposed on the target substrate 10, and the led assemblies 20 are disposed in a receiving groove 121, wherein a side of the led assemblies 20 having the supporting substrate 21 is away from the target substrate 11, as shown in fig. 2G.
In this embodiment, a fluid mass transfer method may be used to place a plurality of led modules 20 on the target substrate 10. Specifically, the suspension containing the plurality of light emitting diode assemblies 20 is poured onto the surface of the target substrate 10 provided with the accommodating groove 121, so that the suspension flows through the surface of the target substrate 10 provided with the accommodating groove 121, the light emitting diode assemblies 20 correspondingly fall into the accommodating groove 121, the side of the light emitting diode assemblies 20 provided with the light emitting diodes 22 faces the target substrate 11, and the side of the light emitting diode assemblies 20 provided with the bearing substrate 21 faces away from the target substrate 11. After the led assembly 20 is transferred into the accommodating groove 121, the suspension is removed.
It should be noted that, in some embodiments, the plurality of light emitting diode assemblies 20 may be blown into the accommodating groove 121 in the target substrate 10 by wind, and the transferring method of the light emitting diode assemblies 20 is not particularly limited in this embodiment.
After the plurality of light emitting diode assemblies 20 are placed on the target substrate 10, a distance from a side of the light emitting diode 22 facing away from the target substrate 11 to the target substrate 11 is greater than or equal to a depth of the receiving groove 121.
Further, the horizontal cross-sectional area of the carrying substrate 21 is larger than the orthographic projection area of the groove wall of the accommodating groove 121 on the plane of the target substrate 11, that is, after the plurality of led assemblies 20 are disposed on the target substrate 10, the orthographic projection of the carrying substrate 21 on the plane of the target substrate covers the accommodating groove 121. Therefore, when the plurality of led modules 20 are transferred by the fluid mass transfer method or other methods, the side of the led module 20 provided with the leds 22 is ensured to face the target substrate 11 and enter the corresponding accommodating groove 121, so that the transfer efficiency of the led module 20 can be improved.
S4: the carrier substrate 21 is removed as shown in fig. 2H.
Since the material of the supporting substrate 21 and the material of the barrier wall 12 are both organic photoresist in the present embodiment, the supporting substrate 21 and the barrier wall 12 can be peeled off by exposing and developing, so that the light emitting diode 22 is separated from the supporting substrate 21 and the barrier wall 12 is separated from the target substrate 11.
In summary, in the method for transferring the light emitting diode 22 provided in the present embodiment, since the retaining wall 12 is provided in the target substrate 10 in advance, the retaining wall 12 is provided with the plurality of accommodating grooves 121, each light emitting diode assembly 20 includes the carrier substrate 21 disposed at one side of the light emitting diode 22, and after the plurality of light emitting diode assemblies 20 are disposed on the target substrate 10, for the light emitting diode assemblies 20 entering the accommodating grooves 121, since one side of the light emitting diode assemblies 20 provided with the carrier substrate 21 is away from the target substrate 11, the light emitting diode 22 is separated from the carrier substrate 21 by removing the carrier substrate 21, and further the transfer of the light emitting diode 22 is completed without using a glue material as a temporary fixing material of the light emitting diode 22, so as to improve the light emitting performance of the light emitting diode 22.
Referring to fig. 3A to 3C, a second embodiment of the present application provides a method for transferring a light emitting diode, which is different from the first embodiment in that: in step S1, a recess 1211 is opened on a portion of the groove wall of the accommodation groove 121 away from the target substrate 11, the recess 1211 being adjacent to the positive polarity pad 131, as shown in fig. 3A; in step S25, the second end 212 is flush with an end of the light emitting diode 22 remote from the first electrode 221a, as shown in fig. 3B; in step S3, after the plurality of light emitting diode assemblies 20 are placed on the target substrate 10, the first end 211 extends into the recess 1211, as shown in fig. 3C.
Specifically, in step S1 of the present embodiment, the recess 1211 is a notch formed on the surface of the retaining wall 12 away from the target substrate 11. The recess 1211 has a bottom surface (not shown) parallel to the plane of the target substrate 11 and a side surface (not shown) connected to the bottom surface, the side surface being perpendicular to the plane of the target substrate 11. Since the concave portion 1211 is adjacent to the positive polarity pad 131, that is, the pad in the pad group 13 close to the concave portion 1211 is the positive polarity pad 131, and the pad in the pad group 13 far from the concave portion 1211 is the negative polarity pad 132, the arrangement of the concave portion 1211 in the present embodiment can distinguish the pad types in the target substrate 10.
Note that, in this embodiment, only a structure in which both the bottom surface and the side surface are planar and perpendicular is illustrated, and in some embodiments, the bottom surface and the plane may be curved, or the recess 1211 may further include other surfaces than the bottom surface and the side surface, and the structure of the recess 1211 is not particularly limited in this embodiment.
In step S25 of the present embodiment, since the second end 212 of the carrier substrate 21 is flush with the end of the light emitting diode 22 away from the first electrode 221a, i.e., the structures of the first end 211 and the second end 212 are different, the first electrode 221a and the second electrode 221b can be distinguished by distinguishing the first end 211 and the second end 212. Since the first electrode 221a is the positive electrode of the light emitting diode 22 and the second electrode 221b is the negative electrode of the light emitting diode 22, the above arrangement can realize the distinction between the positive and negative electrodes in the light emitting diode 22.
In step S3 of the present embodiment, when the plurality of led assemblies 20 are transferred by the fluid mass transfer method or other methods, since the accommodation groove 121 is close to the positive electrode pad 131 of the recess 1211, the first end 211 of the carrying substrate 21 corresponds to the first electrode 221a (positive electrode) of the led 22, and in the process that the led 22 in the led assembly 20 falls into the accommodation groove 121, since the second end 212 of the carrying substrate 21 is flush with the end of the led 22 far from the first electrode 221a, only the first end 211 of the carrying substrate 21 can fall into the recess 1211, so that the first electrode 221a (positive electrode) of the led 22 is aligned with the positive electrode pad 131 in the target substrate 10 directly, and further precise alignment between the positive electrode and the negative electrode in the led 22 and the positive electrode pad and the negative electrode pad in the target substrate 10 is achieved, thereby improving the transfer accuracy of the led 22.
Referring to fig. 4A to 4C, a third embodiment of the present application provides a method for transferring a light emitting diode, which is different from the second embodiment in that:
in step S1, the plurality of receiving grooves 121 includes a first receiving groove 121a, a second receiving groove 121b, and a third receiving groove 121c, the concave portion 1211 includes a first concave portion 1211a, a second concave portion 1211b, and a third concave portion 1211c, the first concave portion 1211a is provided on a portion of the groove wall of the first receiving groove 121a away from the target substrate 11, the second concave portion 1211b is provided on a portion of the groove wall of the second receiving groove 121b away from the target substrate 11, the third concave portion 1211c is provided on a portion of the groove wall of the third receiving groove 121c away from the target substrate 11, and the forward projection areas of the first concave portion 1211a, the second concave portion 1211b, and the third concave portion 1211c on a plane parallel to the target substrate 11 decrease in order, as shown in fig. 4A.
Specifically, each of the first recess 1211a, the second recess 1211b, and the third recess 1211c has a bottom surface parallel to the plane of the target substrate 11 and a side surface connected to the bottom surface, the side surface being perpendicular to the plane of the target substrate 11. In the present embodiment, the forward projection areas of the bottom surface of the first recess 1211a, the bottom surface of the second recess 1211b, and the bottom surface of the third recess 1211c on the target substrate 11 decrease in order.
In step S25, the plurality of light emitting diode assemblies 20 include a plurality of first color light emitting diode assemblies 20A, a plurality of second color light emitting diode assemblies 20B, and a plurality of third color light emitting diode assemblies 20C, as shown in fig. 4B. The plurality of first color led assemblies 20A, the plurality of second color led assemblies 20B, and the plurality of third color led assemblies 20C are cut from the three transient substrates and the corresponding wafers, respectively, and the specific cutting method may be described according to the foregoing example one, which is not repeated herein. Wherein the first end 211a of the first color led assembly 20A, the first end 211B of the second color led assembly 20B, and the first end 211C of the third color led assembly 20C have different extension lengths.
In the present embodiment, the first color led assembly 20A includes a red led 22A and a carrier substrate 21 located on one side of the red led 22A. The second color led assembly 20B includes a green led 22B and a carrier substrate 21 located on one side of the green led 22B. The third color led assembly 20C includes a blue led 22C and a carrier substrate 21 located on one side of the blue led 22C. The first end 211a in the first color light emitting diode assembly 20A, the first end 211B in the second color light emitting diode assembly 20B, and the first end 211C in the third color light emitting diode assembly 20C are sequentially reduced in extension length, as shown in fig. 4B.
Specifically, in the first color led assembly 20A, the first end portion 211a extends outwardly from one end of the red led 22A and has a first extension length L1; in the second color led assembly 20B, the first end portion 211B extends outwardly from one end of the green led 22B and has a second extension length L2; in the third color led assembly 20C, the first end portion 211C extends outwardly from one end of the blue led 22C and has a third extension length L3. Wherein, the first extension length L1, the second extension length L2 and the third extension length L3 decrease in sequence.
The step S3 comprises the following steps: the plurality of first color led assemblies 20A, the plurality of second color led assemblies 20B, and the plurality of third color led assemblies 20C are transferred onto the target substrate 10 at one time, as shown in fig. 4C. Wherein, a first color led assembly 20A corresponds to a first accommodating groove 121a, a second color led assembly 20B corresponds to a second accommodating groove 121B, and a third color led assembly 20C corresponds to a third accommodating groove 121C.
Specifically, after the plurality of first color led assemblies 20A, the plurality of second color led assemblies 20B, and the plurality of third color led assemblies 20C are transferred onto the target substrate 10 at a time, the first end portions 211a of the first color led assemblies 20A extend into the first recesses 1211a, the first end portions 211B of the second color led assemblies 20B extend into the second recesses 1211B, and the first end portions 211C of the third color led assemblies 20C extend into the third recesses 1211C.
With the above arrangement, compared with the manner of transferring the large quantity of the three color leds in three times, the present embodiment can realize the one-time transfer of the red light leds 22A, the green light leds 22B and the blue light leds 22C, and further can improve the large quantity transfer efficiency of the leds 22.
Referring to fig. 5, an embodiment of the present application further provides a light-emitting substrate 100. The light emitting substrate 100 includes a driving substrate 100A and a plurality of light emitting diodes 22 disposed at one side of the driving substrate 100A.
Specifically, the driving substrate 100A has a plurality of pad groups 13 thereon. Each pad group 13 includes a positive polarity pad 131 and a negative polarity pad 132. The light emitting diode 22 has a first electrode 221a connected to the positive polarity pad 131 and a second electrode 221b connected to the negative polarity pad 132 on a side near the driving substrate 100A.
It should be noted that, the driving substrate 100A further includes a thin film transistor (not shown in the drawings) for driving the light emitting diode 22 to emit light, and the related art is the prior art and is not described herein again.
The light emitting diode 22 may be transferred by the transfer method of the light emitting diode 22 described in the foregoing example one, example two or example three, and the related transfer method may refer to the description of the foregoing example one, example two or example three, which are not repeated herein.
Referring to fig. 6, the embodiment of the application further provides a display panel 200, where the display panel 200 includes a light emitting substrate 100 and a package structure 30 disposed on the light emitting substrate 100. The light-emitting substrate 100 may be the light-emitting substrate 100 described in the foregoing embodiments, and the specific structure of the light-emitting substrate 100 may be referred to the description of the foregoing embodiments, which is not repeated herein.
In this embodiment, the package structure 30 is a molding compound. The encapsulation glue is disposed on the light emitting diodes 22 and fills the regions between adjacent light emitting diodes 22. In some embodiments, to further improve the packaging effect of the light emitting diode 22, the packaging structure 30 may further include a packaging adhesive and a packaging cover plate (not shown in the drawings) disposed on the packaging adhesive, which is not described herein.
The foregoing describes in detail a method for transferring a light emitting diode, a light emitting substrate and a display panel provided by the embodiments of the present application, and specific examples are applied to illustrate the principles and embodiments of the present application, and the above description of the embodiments is only for helping to understand the method and core ideas of the present application; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, the present description should not be construed as limiting the present application.
Claims (8)
1. A method of transferring a light emitting diode, comprising the steps of:
providing a target substrate, wherein the target substrate comprises a target substrate and a retaining wall arranged on one side of the target substrate, a plurality of accommodating grooves are formed in the retaining wall, and concave parts are formed in the parts, far away from the target substrate, of the groove walls of the accommodating grooves;
providing a plurality of light emitting diode assemblies, wherein each light emitting diode assembly comprises a bearing substrate and a light emitting diode arranged on one side of the bearing substrate, a first electrode and a second electrode are arranged on one side of the light emitting diode away from the bearing substrate, the bearing substrate is provided with a first end part corresponding to the first electrode, the first end part extends from one end of the light emitting diode to a direction away from the second electrode, the bearing substrate is also provided with a second end part corresponding to the second electrode, and the second end part is flush with one end of the light emitting diode away from the first electrode;
placing a plurality of light emitting diode assemblies on the target substrate, wherein one light emitting diode assembly corresponds to one of the accommodating grooves, one side of the light emitting diode assembly provided with the bearing substrate faces away from the target substrate, and the first end part extends into the concave part;
and removing the bearing substrate.
2. The method according to claim 1, wherein after the plurality of light emitting diode modules are placed on the target substrate, a distance from a surface of the light emitting diode facing away from the target substrate to the target substrate is greater than or equal to a depth of the accommodating groove.
3. The method of claim 2, wherein after the plurality of led modules are disposed on the target substrate, the horizontal cross-sectional area of the carrier substrate is larger than the orthographic projection area of the groove wall of the accommodating groove on the plane of the target substrate.
4. The transfer method of a light emitting diode according to claim 1, wherein the accommodating groove comprises a first accommodating groove, a second accommodating groove and a third accommodating groove, the first accommodating groove is formed in a portion of a groove wall of the first accommodating groove, which is far away from the target substrate, the second accommodating groove is formed in a portion of the groove wall of the second accommodating groove, which is far away from the target substrate, the third accommodating groove is formed in a portion of the groove wall of the third accommodating groove, which is far away from the target substrate, and forward projection areas of the first accommodating groove, the second accommodating groove and the third accommodating groove on a plane parallel to the target substrate are sequentially reduced; the plurality of light emitting diode assemblies comprise a plurality of first color light emitting diode assemblies, a plurality of second color light emitting diode assemblies and a plurality of third color light emitting diode assemblies;
after the plurality of light emitting diode assemblies are placed on the target substrate, a first end of the first color light emitting diode assembly extends into the first recess, a first end of the second color light emitting diode assembly extends into the second recess, and a first end of the third color light emitting diode assembly extends into the third recess.
5. The method of claim 1, wherein the step of providing a plurality of led modules comprises:
providing a growth substrate, wherein the growth substrate comprises a growth substrate and a wafer arranged on one side of the growth substrate, and a plurality of electrode groups are arranged on one side of the wafer away from the growth substrate;
stripping the growth substrate;
forming a transient substrate on one side of the wafer away from the electrode group;
and cutting the wafer and the transient substrate, wherein the part of the wafer provided with the electrode group is formed into the light-emitting diode, and the part of the transient substrate corresponding to the light-emitting diode is formed into the bearing substrate.
6. The method of claim 1, wherein the material of the carrier substrate and the material of the barrier wall are both organic photoresist, and the step of removing the carrier substrate comprises: and stripping the bearing substrate and the retaining wall.
7. A light-emitting substrate, characterized in that the light-emitting substrate comprises a drive substrate and a plurality of light-emitting diodes provided on one side of the drive substrate, the light-emitting diodes being transferred by the transfer method of the light-emitting diode according to any one of claims 1 to 6.
8. A display panel comprising the light-emitting substrate according to claim 7.
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