CN114442694B - Self-calibration silicon carbide motor controller junction temperature estimation method - Google Patents
Self-calibration silicon carbide motor controller junction temperature estimation method Download PDFInfo
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Abstract
The invention discloses a self-calibration silicon carbide motor controller junction temperature estimation method, which is used for calculating junction temperature by analyzing, extracting and calculating the junction temperature according to a silicon carbide junction temperature calculation formulaThe method comprises the steps of constructing a junction temperature fitting formula according to the influence factor with the largest influence, determining undetermined parameters in the junction temperature fitting formula according to infrared test data of a silicon carbide black module, calibrating the junction Wen Nige formula by using an NTC (negative temperature coefficient) sensor to improve estimation accuracy, completing self calibration of a silicon carbide junction temperature estimation result of a motor controller, and obtaining a silicon carbide junction temperature estimated value T j-calibration . The method can feed back the junction temperature of the silicon carbide chip in real time, and uses an NTC sensor arranged in a motor controller to calibrate the temperature.
Description
Technical Field
The invention relates to a calculation method, in particular to a self-calibration silicon carbide motor controller junction temperature estimation method.
Background
The rapid development in the fields of electric vehicles, new energy power generation, smart grids and the like puts higher and higher requirements on the performance and reliability of power semiconductor devices. For an electric automobile, the application environment of the power semiconductor device is more severe due to the uncertainty of the external environment and the operation condition.
The third generation semiconductor materials represented by silicon carbide have the characteristics of high forbidden band width, high thermal conductivity, high breakdown field strength and the like, and become preferred materials of high-voltage, high-temperature and high-frequency power devices. The silicon carbide chip has smaller volume and thinner size, and brings stronger heat aggregation effect and higher current density. Therefore, chip temperature monitoring of silicon carbide power devices is important to reliable operation thereof. An electric vehicle motor controller based on a silicon carbide semiconductor device is generally provided with one or more Negative Temperature Coefficient (NTC) temperature sensors on a ceramic copper-clad plate (DBC) at a position close to a silicon carbide chip.
From the position, a certain distance exists between the NTC temperature sensor and the silicon carbide chip, and the real temperature of the silicon carbide chip cannot be reflected. Therefore, the value of the NTC temperature sensor can only be used as a reference temperature, and the temperature of the silicon carbide chip can represent the real temperature of the chip.
Reading the prior art, the junction temperature monitoring method mainly focuses on four aspects: circuit detection methods, thermal network methods, temperature estimation methods, and data driven methods.
The circuit detection method is to obtain electric signals such as blocking leakage current, conduction voltage drop and the like by using an additional detection circuit. And then calculating the junction temperature of the power semiconductor according to a junction temperature calculation formula. The extra detection circuit requires the arrangement of collecting points on the collector and emitter of the semiconductor, which changes the original circuit structure and increases the cost, and at the same time, the unpredictable influence of electromagnetic compatibility (EMC) is also introduced.
The thermal network method abstracts a stacked structure of the power semiconductor modules into a series-parallel network of thermal resistance and thermal capacity. And establishing a heat network equation of the heat transfer of the power semiconductor module according to the heat transfer relation between the power semiconductor module and the cooling system. And substituting the loss of the power semiconductor into the established heat network equation so as to obtain the junction temperature of the power semiconductor. The method solves the problem that the cooling system and the cooling condition are not considered in the temperature prediction, so that the method is closer to the actual working condition. However, since the thermal resistance and the thermal capacity are not constants but nonlinear values with temperature changes, the thermal network equation is not completely accurate.
The temperature estimation method is to construct a loss model by using parameters such as output current, output frequency and bus voltage of the power semiconductor module. And estimating the junction temperature of the power semiconductor through various self-adaptive algorithms. The method has higher requirement on the real-time performance of the operation of the motor controller chip, and can occupy a large amount of computing resources of a processor.
The data driving method is to collect a great deal of sample data by means of an infrared camera, an optical fiber sensor, a thermocouple and the like. And a functional relation among the current, the voltage, the frequency and the junction temperature of the power semiconductor is constructed in a data fitting or neural network training mode. This method is too dependent on the sample size and if there is a gross deviation in the sample size, the measurement will be inaccurate. However, if the actual temperature collected by the NTC sensor is fully utilized, the reliability of the power semiconductor junction temperature estimation will be greatly improved.
The methods have the problems that the original circuit structure is changed, the cost is increased, the requirement on the real-time performance of the operation of a motor controller chip is high, a large amount of computing resources of a processor are occupied, the measurement result is inaccurate and the like.
Disclosure of Invention
The invention provides a self-calibration silicon carbide motor controller junction temperature estimation method, which aims to feed back the junction temperature of a silicon carbide chip in real time and carry out temperature calibration by using an NTC sensor built in a motor controller.
The general idea of the invention is as follows:
and analyzing and extracting an influence factor which has the largest influence on the junction temperature calculation based on the silicon carbide junction temperature calculation formula, and constructing a junction temperature fitting formula. And determining undetermined parameters in a junction temperature fitting formula based on the infrared test data of the silicon carbide black module. Using the NTC sensor, the junction Wen Nige equation is calibrated to improve the estimation accuracy. In the invention, data required by the junction temperature fitting formula are fed back by the existing sensor and the main control chip of the motor controller, and no additional sensor or hardware circuit structure is required to be added.
According to the derivation analysis of the junction temperature formula, the formula for fitting the junction temperature of the silicon carbide chip can be obtained as follows:
T j ＝f(K 1 ,K 2 ,K 3 ,K 4 ,K 5 ,f s ,i,V dc ) (1)
from the above analysis, it can be seen that the junction temperature T with silicon carbide j The three relevant factors are load current i and bus voltage V dc Switching frequency f s . The junction temperature T can be obtained through a silicon carbide junction temperature test j Load current i, bus voltage V dc Switching frequency f s The measured data of (a). Then using the formula (1) to calculate the junction temperature T j For output, the load current i and the bus voltage V are used dc Switching frequency f s Fitting the data to the input, K in the formula can be determined 1 To K 5 And (4) the coefficient. Thereby realizing the silicon carbide junctionOn-line real-time estimation of temperature.
The method utilizes the NTC temperature sensor to calibrate the real-time estimation result of the junction temperature of the silicon carbide. Unlike silicon carbide junction temperature, which cannot be directly measured by a sensor, an NTC temperature sensor can acquire and feed back a temperature value (the temperature of the region where the NTC sensor is located) in real time. In the foregoing silicon carbide junction temperature test, the junction temperature T is recorded simultaneously j Measured temperature T with NTC NTC-actual measurement And again applying the formula (1) as the NTC temperature T NTC-actual measurement For output, the load current i and the bus voltage V are used dc Switching frequency f s Fitting the data to the input, M in the formula can be determined 1 To M 5 And (4) the coefficient. Thereby realizing the real-time estimation of the NTC temperature and obtaining the estimation result T NTC estimation The formula is as follows:
T NTC estimation ＝f(M 1 ,M 2 ,M 3 ,M 4 ,M 5 ,f s ,i,V dc ) (2)
Estimating the temperature T by the NTC NTC estimation Measured temperature T with NTC NTC-actual measurement By comparison, the deviation caused by the estimation formula can be obtained:
T NTC deviation ＝T NTC estimation -T NTC-actual measurement (3)
Applying this deviation to the junction temperature T j Compensating the estimation result to finish the self calibration of the silicon carbide junction temperature estimation result of the motor controller, wherein the formula is as follows:
T j-calibration ＝T j +T NTC deviation (4)。
Based on the above thought, the technical scheme of the invention is as follows:
a self-calibration silicon carbide motor controller junction temperature estimation method comprises the following steps:
step 1, data acquisition: collecting load current i and bus voltage V dc Switching frequency f s NTC measured temperature T NTC-actual measurement ；
Step 2, recording the actual measurement temperature T of the NTC NTC-actual measurement ；
Meanwhile, step 3, calculating the NTC estimated temperature, wherein the formula is as follows:
T NTC estimation ＝f(M 1 ,M 2 ,M 3 ,M 4 ,M 5 ,f s ,i,V dc ) (2)
Wherein, M 1 To M 5 Is the NTC temperature estimation coefficient;
and meanwhile, step 4, calculating the estimated junction temperature of the silicon carbide, and adopting a silicon carbide chip junction temperature fitting formula, wherein the formula is as follows:
T j-estimation ＝f(K 1 ,K 2 ,K 3 ,K 4 ,K 5 ,f s ,i,V dc )
Wherein, K 1 To K 5 Is the junction temperature estimation coefficient;
step 5, estimating the temperature T of the NTC NTC estimation Measured temperature T with NTC NTC-actual measurement And comparing to obtain the deviation brought by an estimation formula, wherein the formula is as follows:
T NTC deviation ＝T NTC estimation -T NTC-actual measurement (3)
Applying the deviation to the junction temperature estimate T j-estimation The self calibration of the silicon carbide junction temperature estimation result of the motor controller is completed, and the silicon carbide junction temperature estimation value T is obtained j-calibration The formula is as follows:
T j-calibration ＝T j-estimation +T NTC deviation (4)。
Further, the junction temperature estimation coefficient K of the step 4 1 To K 5 The method is to pass the junction temperature test of silicon carbide in advance, utilize the formula (1),
T j ＝f(K 1 ,K 2 ,K 3 ,K 4 ,K 5 ,f s ,i,V dc ) (1)
by NTC temperature T NTC-actual measurement For output, the load current i and the bus voltage V are used dc Switching frequency f s Fitting data for input, and calculating to obtain T j The actual junction temperature of the silicon carbide obtained by collection is obtained.
Further, the NTC temperature estimation coefficient M 1 To M 5 Is put through in advancePassing the silicon carbide junction temperature test by using the formula (2)
T NTC estimation ＝f(M 1 ,M 2 ,M 3 ,M 4 ,M 5 ,f s ,i,V dc ) (2)
By NTC temperature T NTC estimation For output, the load current i and the bus voltage V are used dc Switching frequency f s And fitting data for input and calculating to obtain the target.
Further, data required by the junction temperature fitting formula are fed back by the motor controller, the sensor and the main control chip.
In conclusion, according to the method, the influence factor which has the greatest influence on the junction temperature calculation is analyzed and extracted according to the silicon carbide junction temperature calculation formula, the junction temperature fitting formula is constructed, the undetermined parameter in the junction temperature fitting formula is determined according to the infrared test data of the silicon carbide black module, the junction Wen Nige formula is calibrated by using the NTC sensor to improve the estimation precision, the self calibration of the silicon carbide junction temperature estimation result of the motor controller is completed, and the estimated value T of the silicon carbide junction temperature is obtained j-calibration . The method can feed back the junction temperature of the silicon carbide chip in real time, and uses the NTC sensor built in the motor controller to calibrate the temperature, thereby reducing the heat loss of the power semiconductor device, improving the system efficiency of the driving motor and simultaneously ensuring that the power semiconductor device can safely and reliably operate in the design life cycle.
Drawings
Fig. 1 is a flow chart of silicon carbide junction temperature estimation through a silicon carbide junction temperature test.
Fig. 2 is a schematic diagram of on-board real-time estimation of silicon carbide junction temperature (including self-calibration).
Detailed Description
The invention is further described with reference to the accompanying drawings in which:
the silicon carbide junction temperature estimate shown in fig. 1 is calibrated during the design of the silicon carbide power module, and then applied to the real-time silicon carbide junction temperature estimate on the cart of fig. 2.
Table 1 is a table of experimental parameters of junction temperature of silicon carbide.
In the process of silicon carbide junction temperature testIn the test process, the bus voltage, the motor rotation speed and the torque can be set according to the table 1, and the load current, the switching frequency, the silicon carbide junction temperature and the NTC temperature under the working condition are recorded. Wherein, the load current, the bus voltage and the switching frequency respectively correspond to the input parameters of the load current i and the bus voltage V required by the silicon carbide junction temperature estimation working process dc Switching frequency f s (ii) a The values in table 1 are examples, and the test data volume can be selectively increased or decreased according to the accuracy requirement of the silicon carbide junction temperature estimation.
Step 101: the silicon carbide junction temperature test was conducted, and the test was conducted according to the working conditions specified in table 1.
Table 1:
step 102: data acquisition: the actual junction temperature T of the silicon carbide is acquired by means of an infrared thermometer, an optical fiber temperature sensor, a silicon carbide chip built-in temperature sensor and the like j Load current i, bus voltage V dc Switching frequency f s NTC temperature T NTC-actual measurement And according to the derivation analysis of the junction temperature formula, the formula for fitting the junction temperature of the silicon carbide chip can be obtained as follows:
T j ＝f(K 1 ,K 2 ,K 3 ,K 4 ,K 5 ,f s ,i,V dc ) (1)
step 103: obtaining an NTC actual mining temperature: NTC temperature T NTC-actual measurement The motor controller directly collects the signals and then applies the signals to the next calculation, and the formula is as follows:
T NTC estimation ＝f(M 1 ,M 2 ,M 3 ,M 4 ,M 5 ,f s ,i,V dc ) (2)
Step 104: according to the formula (2), the load current i and the bus voltage V are calculated dc Switching frequency f s NTC temperature T NTC-actual measurement Fitting by substituting formula, and calculating to obtain NTC temperature estimation coefficient M 1 To M 5 。
Step 105: according to the formula (1), the load current i and the bus voltage V are calculated dc Switching frequency f s Junction temperature T of silicon carbide j Fitting by substituting into a formula, and calculating to obtain a junction temperature estimation coefficient K 1 To K 5 。
Step 106: obtaining an NTC estimated temperature: NTC temperature estimation coefficient M determined according to step 104 1 To M 5 Substituting the formula (2) to calculate the NTC temperature T estimated in real time NTC estimation 。
Step 107: obtaining estimated junction temperature of silicon carbide: k determined according to step 105 1 To K 5 The coefficient, formula (1) is applied to the real-time estimation T of the IGBT junction temperature in the next step j-estimation 。
Referring to fig. 2, the present embodiment is a silicon carbide junction temperature estimation process with self-calibration compensation:
step 201: NTC temperature T is directly gathered by machine controller NTC-actual measurement And load current i, bus voltage V dc Switching frequency f s And the like, which is used for the next calculation.
Step 202: NTC estimated temperature: from the previously determined coefficient M 1 To M 5 Applying equation (2) to the NTC temperature estimate to obtain T NTC estimation 。
Meanwhile, step 203: estimating junction temperature of silicon carbide: determining the coefficient K from the preceding 1 To K 5 Using equation (1) for the estimation of the junction temperature of silicon carbide, thereby obtaining T j-estimation 。
Step 204: for T NTC estimation Filtering is performed to avoid inaccurate estimation due to fluctuation of input signal such as voltage, current, frequency, etc., and to make T NTC estimation And T NTC-actual measurement The following property between them is better.
The specific form of the filter is as follows:
Y(n)＝a·X(n)+(1-a)·Y(n-1)
a denotes a filter coefficient.
Y (n) represents the current filter output value
Y (n-1) represents the last filtered output value.
Step 205: and (4) subtracting the NTC estimated temperature from the NTC measured temperature according to the formula (3) to obtain an offset value. T is NTC deviation The bias value can be more accurate for T j-estimation Self-calibration of (2).
The formula is as follows: t is NTC deviation ＝T NTC estimation -T NTC-actual measurement (3)
The deviation value will be used in self calibration of the estimated junction temperature of the silicon carbide.
Step 206: and (3) compensation calibration: according to the formula (4), T NTC deviation For junction temperature T of silicon carbide j-estimation To obtain a more accurate estimate of the silicon carbide junction temperature T j-calibration 。
The formula is as follows:
T j-calibration ＝T j-estimation +T NTC deviation (4)。
The data required by the junction temperature fitting formula are fed back by the motor controller, the sensor and the main control chip, and the sensor does not need to be additionally arranged or the hardware circuit structure does not need to be changed.
Claims (2)
1. A self-calibrating silicon carbide motor controller junction temperature estimation method, comprising the steps of:
step 1, data acquisition: collecting load current i and bus voltage V dc Switching frequency f s NTC measured temperature T NTC-actual measurement ；
Step 2, recording NTC actual measurement temperature T NTC-actual measurement ；
Meanwhile, step 3, calculating the NTC estimated temperature, wherein the formula is as follows:
T NTC estimation ＝f(M 1 ,M 2 ,M 3 ,M 4 ,M 5 ,f s ,i,V dc ) (2)
Wherein M is 1 To M 5 Is an NTC temperature estimation coefficient, which is obtained by performing a silicon carbide junction temperature test in advance by using a formula (2) and taking the NTC temperature T NTC estimation For output, the load current i and the bus voltage V are used dc Switching frequency f s To input intoFitting the line data and calculating to obtain the line data;
and meanwhile, step 4, calculating the estimated junction temperature of the silicon carbide, and adopting a silicon carbide chip junction temperature fitting formula:
T j-estimation ＝f(K 1 ,K 2 ,K 3 ,K 4 ,K 5 ,f s ,i,V dc ) (1)
Wherein, K 1 To K 5 The junction temperature estimation coefficient is obtained by the steps of passing a silicon carbide junction temperature test in advance, utilizing a formula,
T j ＝f(K 1 ,K 2 ,K 3 ,K 4 ,K 5 ,f s ,i,V dc ) (5)
by NTC temperature T NTC-actual measurement For output, the load current i and the bus voltage V are used dc Switching frequency f s Fitting data for input, and calculating to obtain T j Acquiring the actual junction temperature of the obtained silicon carbide;
step 5, estimating the temperature T of the NTC NTC estimation Measured temperature T with NTC NTC-actual measurement And comparing to obtain the deviation brought by an estimation formula, wherein the formula is as follows:
T NTC deviation ＝T NTC estimation -T NTC-actual measurement (3)
Applying the deviation to the junction temperature estimate T j-estimation The self calibration of the silicon carbide junction temperature estimation result of the motor controller is completed, and the silicon carbide junction temperature estimation value T is obtained j-calibration The formula is as follows:
T j-calibration ＝T j-estimation +T NTC deviation (4)。
2. The self-calibration silicon carbide motor controller junction temperature estimation method according to claim 1, wherein in the step 1, the actual junction temperature T of silicon carbide is acquired through an infrared thermometer, an optical fiber temperature sensor and a silicon carbide chip built-in temperature sensor j 。
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