CN114442439A - Integrated ultraviolet all-medium super lens set for photoetching machine - Google Patents
Integrated ultraviolet all-medium super lens set for photoetching machine Download PDFInfo
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- CN114442439A CN114442439A CN202210066372.9A CN202210066372A CN114442439A CN 114442439 A CN114442439 A CN 114442439A CN 202210066372 A CN202210066372 A CN 202210066372A CN 114442439 A CN114442439 A CN 114442439A
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- 238000001259 photo etching Methods 0.000 title abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 37
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
- G02B13/0055—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras employing a special optical element
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
- G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
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- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
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- Optical Integrated Circuits (AREA)
Abstract
The invention discloses an integrated ultraviolet all-dielectric super lens group for a photoetching machine, which comprises: the array structure comprises a first sub-wavelength array structure, a transparent substrate and a second sub-wavelength array structure; the first sub-wavelength array structure and the second sub-wavelength array structure are arranged on two opposite sides of the transparent substrate; the two sub-wavelength array structures are formed by a plurality of unit structure arrays; the length and the width of the unit structure are both smaller than the working wavelength; the subwavelength array structure converges light. The super lens group also comprises two super lenses which are respectively a first super lens and a second super lens; the first super lens and the second super lens are both in sub-wavelength array structures; the first super lens and the second super lens are integrated on two sides of the same transparent substrate; the diameter ratio of the first superlens to the second superlens is designed to be 4: 1; the integrated ultraviolet all-medium super lens group with the beam shrinking function is realized, the number of lenses of an ultraviolet system is reduced by the super lens group, the transmittance is high, the energy loss is small, and the processing technology is simple.
Description
Technical Field
The invention relates to the technical field of ultraviolet imaging, in particular to an integrated ultraviolet all-dielectric super lens group for a photoetching machine.
Background
The super lens is a popular research direction of the super surface of the micro-nano structure. The super lens adopts a sub-wavelength micro-nano structure to regulate and control the wavefront of light, has the advantages of ultralight, ultrathin, easy integration and the like based on the super control capability of the super lens on the light wave, becomes a hotspot of optical research, and is expected to open a new road for nano optical imaging and ultra-miniature photoelectric equipment. In recent years, research and development of superlenses in visible light and near infrared bands have been advanced, and single-wavelength, multi-wavelength, and broadband achromatic superlenses in visible light bands have been realized. However, research into superlenses in the ultraviolet band is still relatively rare.
The ultraviolet lens group is a core component of a photoetching machine, requires diffraction-limited imaging quality, high resolution, large field of view and smaller distortion, and the performance of the ultraviolet lens group determines the pattern transfer capability of the photoetching machine. The projection objective lens group used for the photoetching machine usually needs a complex lens combination, the system is extremely complex, the lens group needs to reduce the chip layout to a view field according to the equal proportion of 4:1, meanwhile, the numerical aperture NA is required to be large, the wave aberration is small, the distortion is small, the currently domestic designed lens group consists of 27 wafers and 11 movable lenses, and the processing precision is in the sub-nanometer level. This limits the size of the lithography machine, and the complicated lens group structure also puts high requirements on lens assembly. The ultraviolet super lens based on the super surface structure has strong wavefront regulation and control capability, and the functions of the traditional lens group can be realized by using the lens combination as few as possible.
Disclosure of Invention
The invention aims to solve the problems and provides an integrated ultraviolet all-dielectric super lens group for a photoetching machine;
the integrated ultraviolet all-dielectric super lens group for the photoetching machine comprises: the device comprises a first sub-wavelength array structure 1, a transparent substrate 3 and a second sub-wavelength array structure 2; the sub-wavelength array structure 1 is arranged on one side of the transparent substrate 3; the second sub-wavelength array structure 2 is arranged on the other side of the transparent substrate 3; the sub-wavelength array structure 1 is formed by a plurality of unit structures 4 in an array; the length and width of the unit structure 4 are both smaller than the working wavelength; the subwavelength array structure converges light.
In the first sub-wavelength array structure 1, the distance between the center positions of two adjacent unit structures 4 is a fixed value; the first sub-wavelength array structure 1 changes the size of the unit structure 4 by the transmission phase principle, and changes the angle of the unit structure 4 with the same size by the P-B phase principle, thereby realizing the regulation and control of the phase.
The light beam incident to the ultraviolet all-dielectric superlens propagates by the following processes: the light beam passes through the first sub-wavelength array structure 1, and after the light beam is regulated and controlled by the first sub-wavelength array structure 1, a convergent light spot is obtained in the transparent substrate 3; in transmission mode, to achieve convergence, the phase of the uv all-dielectric superlens is expressed by the following equation:
wherein λ is the wavelength of incident light, f is the focal length of the ultraviolet all-dielectric superlens, and an XY plane rectangular coordinate system is established with the plane of the transparent substrate 3, (x, y) are position coordinates on the array surface, and (0, 0) is the origin of coordinates, which is the point where the optical axis on the transparent substrate 3 passes through.
A super lens group, which comprises two super lenses, namely a first super lens and a second super lens; the first super lens is a first sub-wavelength array structure 1, the second super lens is a second sub-wavelength array structure 2, and the focal points of the first super lens and the second super lens are superposed; the first super lens and the second super lens are both the ultraviolet all-dielectric super lens.
The diameter ratio of the first superlens to the second superlens is designed to be 4: 1.
The light beam incident to the ultraviolet super lens group has the following propagation process: the light beams are converged after passing through the first sub-wavelength array 1, a focusing light spot exists at the designed focus position of the light beams, the light beams continue to be transmitted to the second sub-wavelength array 2 after passing through the focusing position of the first sub-wavelength array 1, and the light beams are emitted as parallel light after passing through the second sub-wavelength array 5 with convergence capability. The propagation of the light beam between the two sub-wavelength structures takes place in the transparent substrate 3.
The design focuses of the two sub-wavelength arrays of the first sub-wavelength array structure 1 and the second sub-wavelength array structure 2 are coincident, and the design interval is the sum of the focal lengths of the two sub-wavelength arrays.
The designed numerical apertures of the two sub-wavelength arrays of the first sub-wavelength array structure 1 and the second sub-wavelength array structure 2 are the same, that is, the designed focal length to radius ratios of the two sub-wavelength arrays of the first sub-wavelength array structure 1 and the second sub-wavelength array structure 2 are the same.
The two sub-wavelength structures of the first sub-wavelength array structure 1 and the second sub-wavelength array structure 2 are located on two sides of the same transparent substrate 3, and the relative positions are fixed.
The invention provides an integrated ultraviolet all-dielectric super lens group for a photoetching machine, which comprises: the device comprises a first sub-wavelength array structure 1, a transparent substrate 3 and a second sub-wavelength array structure 2; the first sub-wavelength array structure 1 and the second sub-wavelength array structure 2 are arranged on two opposite sides of the transparent substrate 3; the two sub-wavelength array structures are formed by a plurality of unit structures 4; the length and width of the unit structure 4 are both smaller than the working wavelength; the subwavelength array structure converges light. A super lens group, which comprises two super lenses, namely a first super lens and a second super lens; the sub-wavelength array structure 1 is a first super lens, and the sub-wavelength array structure 2 is a second super lens; the focal points of the first superlens and the second superlens are superposed; the thickness of the transparent substrate is the sum of the focal lengths of the first superlens and the second superlens; the first super lens and the second super lens are both ultraviolet all-dielectric super lenses; the first super lens and the second super lens are integrated on two sides of the same transparent substrate; the numerical apertures of the first superlens and the second superlens are the same; the diameter ratio of the first superlens to the second superlens is designed to be 4: 1; the integrated ultraviolet all-dielectric super-surface lens group is realized, the integrated ultraviolet all-dielectric super-surface lens group with the beam shrinking function is realized, the number of lenses of an ultraviolet system is reduced, the transmittance is high, the energy loss is small, and the processing technology is simple.
The invention has the beneficial effects that: the integrated ultraviolet all-medium super lens group for the photoetching machine realizes perfect beam shrinking of ultraviolet parallel light, realizes the function of a multi-lens group of an objective lens of the traditional ultraviolet photoetching machine by respectively designing two super lens sub-wavelength array groups on two parallel surfaces of the transparent substrate 3, has the advantages of ultralight, ultrathin and easy integration, and opens a new path for nano optical imaging and ultra-miniature photoelectric equipment. Compared with the traditional ultraviolet lens group, the invention has the advantages of small volume, simple system structure and the like. The processing technology required by the invention is simple.
Drawings
FIG. 1 is a diagram of the optical path convergence of an integrated UV all-dielectric superlens set for a lithography machine according to the present invention;
FIG. 2 is a diagram illustrating the focusing result of an embodiment of the UV all-dielectric superlens with a cylindrical cell structure according to the present invention;
FIG. 3 is a diagram illustrating the focusing results of one embodiment of the UV all-dielectric superlens with cylindrical cell structure of the present invention (different lens sizes);
FIG. 4 is a schematic diagram of an integrated UV all-dielectric superlens assembly with an elliptical cylindrical unit structure according to the present invention;
FIG. 5 is a block diagram of a cell structure having a different structure according to the present invention;
in the figure: 1. the super lens with the sub-wavelength array structure 2, the super lens with the sub-wavelength array structure 3, the transparent substrate 4 and the unit structure.
Detailed Description
In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention, taken in conjunction with the accompanying drawings and detailed description, is set forth below.
Referring to fig. 1 to 5, an ultraviolet all-dielectric superlens includes: the device comprises a first sub-wavelength array structure 1, a transparent substrate 3 and a second sub-wavelength array structure 2; the first sub-wavelength array structure 1 and the second sub-wavelength array structure 2 are arranged on two opposite sides of the transparent substrate 3; the first sub-wavelength array structure 1, the transparent substrate 3 and the second sub-wavelength array structure 2 are sequentially arranged from left to right; the subwavelength array structure converges light.
The first sub-wavelength array structure 1 and the second sub-wavelength array structure 2 are both formed by a plurality of unit structures 4 in an array;
the unit structure 4 can be cylindrical, elliptic cylindrical, rectangular cylindrical and the like, the size of a cross section obtained by cutting the unit structure 4 along a plane parallel to the transparent substrate 3 is smaller than the working wavelength of the ultraviolet all-dielectric superlens, if the unit structure 4 is cylindrical, the cross section is circular, if the unit structure 4 is elliptic, the cross section is elliptic, if the unit structure 4 is rectangular cylindrical, the cross section is rectangular, and the length and the width of the rectangle are both smaller than the working wavelength;
in the first sub-wavelength array structure 1 and the second sub-wavelength array structure 2, the distance between the center positions of two adjacent unit structures 4 is a fixed value; the center position can be understood as the centroid of the unit structure 4, i.e., the centroid of a cylindrical structure, the centroid of an elliptical structure, the centroid of a rectangular cylindrical structure, etc.;
the first sub-wavelength array structure 1 and the second sub-wavelength array structure 2 change the size of the unit structure 4 through a transmission phase principle, and change the angle of the unit structure 4 with the same size through a P-B phase principle, so that the phase is regulated and controlled, and the light is converged.
Referring to fig. 2, the propagation process of a light beam incident to an ultraviolet all-dielectric superlens is as follows: after the light beam is regulated and controlled by the first sub-wavelength array structure 1, a convergent light spot is obtained in the transparent substrate 3;
in transmission mode, to achieve convergence, the phase of the uv all-dielectric superlens is expressed by the following equation:
wherein λ is the wavelength of incident light, f is the focal length of the ultraviolet all-dielectric superlens, and an XY plane rectangular coordinate system is established with the plane of the transparent substrate 3, (x, y) are position coordinates on the transparent substrate 3, and (0, 0) is the origin of coordinates, which is the point where the optical axis on the transparent substrate 3 passes through.
The ultraviolet all-dielectric super-lens group takes a transparent substrate 3 (an ultraviolet band near-transparent material substrate) as a support, a first sub-wavelength array structure 1 has a focusing effect of a lens, and a second sub-wavelength array structure 2 has the focusing effect of the lens.
The transparent substrate 3, the first sub-wavelength array structure 1 and the second sub-wavelength array structure 2 are made of materials with high transmittance in ultraviolet band, and can be made of alpha-Al2O3、AlN、SiO2、HfO2、MgO、Ga2O3、GaN、ZrO2、MgF、AlF3、LaF3、GdF3Or AlGaO, etc.
The transparent substrate 3 is made of SiO2The material adopts alpha-Al for the first sub-wavelength array structure 1 and the second sub-wavelength array structure 22O3The material, each unit structure 4 of the sub-wavelength array structure is a cylinder with different radius sizes; the ultraviolet all-dielectric superlens shown in fig. 4 is: a first sub-wavelength array structure 1 and a second sub-wavelength array structure 2; the unit structures 4 of the first sub-wavelength array structure 1 and the second sub-wavelength array structure 2 are cylindrical structures with the same height and different diameters, the size of each unit structure 4 is smaller than the working wavelength lambda and is about 50-100 nanometers, the focusing results obtained by the two sub-wavelength structures with different sizes are shown in fig. 2 and fig. 3, a white area is a focusing light spot, and focusing is achieved within a certain range under the incident wavelength of an ultraviolet band.
Based on the waveguide phase and the P-B phase, the phase is adjusted by changing the sizes and angles of the various structures, as shown in fig. 5, the various structures can be selected to realize phase retardation, thereby realizing the same focusing effect as the conventional method under the incident wavelength of the ultraviolet band.
Based on the superlens, two superlenses with the same Numerical Aperture (NA) value are designed and combined to form a superlens group, so that the effect of condensing parallel light is achieved; the diameter ratio of the first superlens to the second superlens is designed to be 4: 1; the focal points of the first superlens and the second superlens are superposed; after the parallel light enters, the light rays are converged at the focus of the first super lens through the first super lens, the light rays continue to propagate after passing through the focus of the first super lens and reach the second super lens, and after the light rays are converged through the second super lens, the light rays are finally emitted as the parallel light.
The invention provides an integrated ultraviolet all-dielectric super lens group for a photoetching machine, aiming at solving the defects of the existing transmission type super lens in an ultraviolet wave band and based on the transmission type super lens with a super surface structure. Based on the design idea of a Huygens electromagnetic super surface, a super lens based on a medium super surface is realized by combining a series of medium artificial atoms with high transmissivity and controllable coverage of 2 pi transmission phase. The sub-wavelength array structure selects a material with high contrast in the refractive index of the design wavelength contrast environment, highly concentrates electromagnetic waves in the array structure, and selects a material with high transmission in an ultraviolet band as a substrate of the dielectric super-surface, so that the energy loss in the substrate structure is reduced.
The integrated ultraviolet all-medium super-lens group for the photoetching machine realizes beam contraction of ultraviolet band light, is suitable for an ultraviolet photoetching machine objective lens system, has the advantages of ultralight, ultrathin and easiness in integration, and provides a new way for nanometer optical imaging and super-miniature photoelectric equipment splitting. The invention reduces the number of lenses of an ultraviolet system, and has high transmittance, small energy loss and simpler processing technology.
Claims (9)
1. An ultraviolet all-dielectric superlens, comprising: the device comprises a first sub-wavelength array structure (1), a transparent substrate (3) and a sub-wavelength array structure (2); the sub-wavelength array structure (1) and the second sub-wavelength array structure (2) are arranged on two opposite sides of the transparent substrate (3); the first sub-wavelength array structure (1) and the second sub-wavelength array structure (2) are the same and are formed by a plurality of unit structures (4) in an array; the length and the width of the unit structure (4) are both smaller than the working wavelength; the subwavelength array structure converges light.
2. The ultraviolet all-dielectric superlens of claim 1, wherein: in the first sub-wavelength array structure (1) and the second sub-wavelength array structure (2), the distance between the center positions of two adjacent unit structures 4 is a fixed value; the first sub-wavelength array structure (1) and the second sub-wavelength array structure (2) change the size of the unit structure (4) through a transmission phase principle, and change the angle of the unit structure (4) with the same size through a P-B phase principle, so that the phase is regulated.
3. The uv all-dielectric superlens of claim 2, wherein: the light beam incident to the ultraviolet all-dielectric superlens propagates by the following processes: the light beam is regulated and controlled by the sub-wavelength array structure to obtain a convergent light spot; in transmission mode, to achieve convergence, the phase of the uv all-dielectric superlens is expressed by the following equation:
wherein lambda is the wavelength of incident light, f is the focusing focal length of the ultraviolet all-dielectric superlens, an XY plane rectangular coordinate system is established by using the plane of the transparent substrate (3), (x, y) are position coordinates on the array surface, and (0, 0) is a coordinate origin, namely an optical axis passing point on the transparent substrate (3).
4. The integrated ultraviolet all-dielectric super lens group comprises two super lenses, namely a first super lens and a second super lens; the first super lens is a first sub-wavelength structure array structure (1), and the second super lens is a second sub-wavelength structure array (2); the first super lens and the second super lens are both the ultraviolet all-dielectric super lens as claimed in claim 3.
5. An integrated UV all-dielectric superlens set according to claim 4, wherein: the diameter ratio of the first superlens to the second superlens is designed to be 4: 1.
6. An integrated UV all-dielectric superlens group according to claim 5, wherein: the light beam incident to the ultraviolet super lens group has the following propagation process: the light beams are converged after passing through the first sub-wavelength array (1), a focusing light spot exists at the designed focus position of the light beams, the light beams continue to be transmitted to the second sub-wavelength array (2) after passing through the focusing position of the first sub-wavelength array (1), and the light beams are emitted as parallel light after passing through the second sub-wavelength array (5) with convergence capability; propagation of the light beam between the two sub-wavelength structures takes place in the transparent substrate (3).
7. An integrated UV all-dielectric superlens set according to claim 6, wherein: the design focuses of the two sub-wavelength arrays of the first sub-wavelength structure array structure (1) and the second sub-wavelength structure array (2) are coincident, and the design interval is the sum of the focal lengths of the two sub-wavelength arrays.
8. An integrated UV all-dielectric superlens set according to claim 7, wherein: the ratio of the designed focal length to the radius of the two sub-wavelength arrays of the first sub-wavelength structure array structure (1) and the second sub-wavelength structure array (2) is the same.
9. The integrated UV superlens group of claim 8, wherein: the two sub-wavelength structures of the first sub-wavelength structure array structure (1) and the second sub-wavelength structure array (2) are positioned on two sides of the same transparent substrate (3) and are fixed in relative positions.
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| CN202210066372.9A CN114442439A (en) | 2022-01-20 | 2022-01-20 | Integrated ultraviolet all-medium super lens set for photoetching machine |
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| CN202210066372.9A CN114442439A (en) | 2022-01-20 | 2022-01-20 | Integrated ultraviolet all-medium super lens set for photoetching machine |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114764156A (en) * | 2021-01-11 | 2022-07-19 | 中国科学院长春光学精密机械与物理研究所 | Infrared all-dielectric orthogonal cylindrical surface super lens |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114764156A (en) * | 2021-01-11 | 2022-07-19 | 中国科学院长春光学精密机械与物理研究所 | Infrared all-dielectric orthogonal cylindrical surface super lens |
| CN114764156B (en) * | 2021-01-11 | 2024-04-02 | 中国科学院长春光学精密机械与物理研究所 | Infrared all-dielectric orthogonal cylindrical superlens |
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