CN114420841B - Monolayer memristor based on metal complex and preparation method thereof - Google Patents
Monolayer memristor based on metal complex and preparation method thereof Download PDFInfo
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- CN114420841B CN114420841B CN202210040989.3A CN202210040989A CN114420841B CN 114420841 B CN114420841 B CN 114420841B CN 202210040989 A CN202210040989 A CN 202210040989A CN 114420841 B CN114420841 B CN 114420841B
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- 150000004696 coordination complex Chemical class 0.000 title claims abstract description 47
- 239000002356 single layer Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 239000003292 glue Substances 0.000 claims abstract description 37
- 239000002120 nanofilm Substances 0.000 claims abstract description 36
- 239000010410 layer Substances 0.000 claims abstract description 34
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 25
- 239000000956 alloy Substances 0.000 claims abstract description 25
- SPAHBIMNXMGCMI-UHFFFAOYSA-N [Ga].[In] Chemical compound [Ga].[In] SPAHBIMNXMGCMI-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000007788 liquid Substances 0.000 claims abstract description 24
- 238000004806 packaging method and process Methods 0.000 claims abstract description 17
- 239000000853 adhesive Substances 0.000 claims description 24
- 230000001070 adhesive effect Effects 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 13
- 238000001338 self-assembly Methods 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 238000005259 measurement Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000002094 self assembled monolayer Substances 0.000 description 4
- 239000013545 self-assembled monolayer Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 229920001795 coordination polymer Polymers 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/671—Organic radiation-sensitive molecular electronic devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to a metal complex-based monomolecular layer memristor and a preparation method thereof, comprising the following steps: a conductive substrate, the conductive substrate being plated with a translucent ITO film on an upper surface thereof; the top electrode is a needle point containing gallium-indium eutectic liquid alloy and a Ga oxide layer coated on the outer surface of the needle point; an organic molecular film connected between the conductive substrate and the top electrode, the organic molecular film being a monolayer of metal complex molecules; and curing the glue, and packaging the conductive substrate, the top electrode and the organic molecular film.
Description
Technical Field
The invention relates to the field of memristors, in particular to a metal complex-based monomolecular layer memristor and a preparation method thereof.
Background
In order to suppress leakage current in Resistive Random Access Memory (RRAMs), a varistor and a current rectifier (diode) are typically connected in series in a diode-resistor (1D-1R) RRAM. However, this complicates the design of the next-generation RRAM, increasing the footprint of the device. The molecular tunnel junction with rectifying hysteresis effect molecules can be used for preparing 1D-1RRRAM with molecular scale, so that the dual functions of a diode and a variable resistor are realized, and the work is focused on finding out the molecules with the functions.
In addition, in the measurement method, a common method for electrical measurement of the current monolayer is to use gallium Indium alloy (EutecticGallium-Indium, EGaIn) as a top electrode, and construct a EGaIn conical tip-self-assembled monolayer-bottom electrode test structure, wherein the bottom electrode is made of different materials according to the polarity of the assembled monolayer and an anchoring group, and Au, ag, ITO is common. After the electrode-molecular layer-electrode structure is constructed, if the use scene needs to be enlarged, the limitation of in-situ measurement of an instrument is eliminated, the research on the monomolecular layer on different instruments is realized, and the problem is solved by Hyo Jae Yoon subject group in 2017 about the work of solidifying and packaging EGaIn conical tip-self-assembled monomolecular layer-bottom electrode by ultraviolet light curing glue, but the parameters in the method are only applicable to specific conditions, and if the method is applied to other directions, the packaging method and the process need to be improved on the basis.
The invention discloses a monolayer memristor based on a metal complex and a preparation method thereof, which are aims at the problems existing in the prior art.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a monolayer memristor based on a metal complex and a preparation method thereof, which can effectively solve the problems in the prior art.
The technical scheme of the invention is as follows:
a metal complex based monolayer memristor comprising:
A conductive substrate, the conductive substrate being plated with a translucent ITO film on an upper surface thereof;
The top electrode is a needle point containing gallium-indium eutectic liquid alloy and a Ga oxide layer coated on the outer surface of the needle point;
An organic molecular film connected between the conductive substrate and the top electrode, the organic molecular film being a monolayer of metal complex molecules;
curing glue, packaging the conductive substrate, the top electrode and the organic molecular film;
Further, the light transmittance of the ITO film is 82% -86%, the resistance of the ITO film is 6-8 ohms, and the thickness of the conductive substrate is 1-1.2mm.
Further, the gallium-indium ratio of the gallium-indium eutectic liquid alloy is 75:25 to 74.5:25.5.
Further, the curing glue is ultraviolet curing glue, and the glue dropping amount of the curing glue is 0.04-0.06ml.
Further, a drain electrode is included, the drain electrode is led out from the conductive substrate, the drain electrode includes a wire, and the wire is connected to the conductive substrate through a corresponding conductive adhesive.
Further, the wire is a single-core shielding wire, and the conductive adhesive is diluted conductive silver adhesive.
Further, a source is included that leads from the needle tip.
Further provided is a method for preparing a metal complex-based monolayer memristor, which is used for preparing the metal complex-based monolayer memristor, and comprises the following steps:
Preparing the organic molecular film on the upper surface of the conductive substrate by utilizing a self-assembly principle;
Stretching the gallium indium eutectic liquid alloy into a needle point, and oxidizing the surface of the needle point to form a Ga oxide layer;
Moving the needle tip towards the monolayer and contacting the needle tip to form a gallium indium eutectic liquid alloy/Ga oxide layer// organic molecular film/conductive substrate molecular junction, wherein "/" represents a covalent bond and "//" represents that the two are in van der Waals contact;
And dripping the curing adhesive, and packaging the conductive substrate, the top electrode and the organic molecular film.
Further, the preparation of the organic molecular film on the upper surface of the conductive substrate using the self-assembly principle includes the steps of:
Immersing the conductive substrate in a solution containing metal complex molecules;
the metal complex molecules form a monomolecular layer on the surface of the conductive substrate by utilizing the self-assembly principle.
Further, the curing glue is an ultraviolet curing glue, the curing glue is dripped, and the packaging of the conductive substrate, the top electrode and the organic molecular film comprises:
and dripping the ultraviolet light curing adhesive into the gallium indium eutectic liquid alloy/Ga oxide layer// organic molecular film/conductive substrate molecular junction, and irradiating the ultraviolet light curing adhesive for 1.5h by using an ultraviolet lamp to cure the ultraviolet light curing adhesive.
Accordingly, the present invention provides the following effects and/or advantages:
According to the invention, a metal complex monolayer with a rectifying hysteresis phenomenon is self-assembled on ITO (indium tin oxide) conductive glass, a EGaIn (gallium indium eutectic liquid alloy) is used for preparing a conical tip electrode as a top electrode, an electrical measurement structure of EGaIn/Ga2O3// metal complex self-assembled monolayer/ITO electrode molecular junction ("/" stands for covalent bond, "//" stands for van der Waals contact) is formed, and ultraviolet curing glue and an ultraviolet lamp are used for packaging and curing the structure, so that the molecular-scale memristor packaging is realized.
2, The self-assembled metal complex monolayer is subjected to voltage stabilization for 1.4V preheating for 2 hours, then IV scanning with the range of 1V to-1V is carried out, the IV curve has the phenomenon of rectifying hysteresis, and the switching ratio can reach 100 at most. Compared with the working of Hyo Jae Yoon subject group "Maskless Arbitrary Writing of Molecular Tunnel Junctions",(DOI：ACS Appl.Mater.Interfaces 2017,9,40556－40563) in which ultraviolet light curing glue is used for curing and packaging EGaIn/Ga2O3 conical tip-self-assembled monomolecular layer-bottom electrode, the invention develops a preparation method of a packaging device suitable for different substrates on the basis of the working of the conical tip-self-assembled monomolecular layer-bottom electrode, and optimizes packaging parameters.
The invention adopts the ultraviolet curing glue to encapsulate the monolayer structure, reduces the instability during measurement and greatly improves the measurement quality of the monolayer.
It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
Drawings
Fig. 1 is a schematic structural view of the present invention.
FIGS. 2-10 are schematic illustrations of the results obtained at various steps of the methods provided by the present invention.
FIGS. 11-12 are experimental data for the present invention.
Detailed Description
For the convenience of understanding by those skilled in the art, the structure of the present invention will now be described in further detail with reference to the accompanying drawings: it should be understood that, in this embodiment, the steps mentioned in this embodiment, unless specifically stated otherwise, may be performed in any order, simultaneously or partially simultaneously,
Referring to fig. 1, a metal complex based monolayer memristor comprising:
A conductive substrate, the upper surface of which is plated with a translucent ITO film 2. In this embodiment, ITO is indium tin oxide, and is mainly used for manufacturing liquid crystal displays, flat panel displays, plasma displays, touch screens, electronic papers, organic light emitting diodes, solar cells, antistatic films, and transparent conductive films for EMI shielding, and has conductive properties. Meanwhile, the embodiment adopts the structure that the ITO film 2 is plated on the upper surface of the glass 1 to form a conductive substrate, and has the characteristics of conductivity, transparency and the like.
The top electrode is a needle tip 6 containing gallium-indium eutectic liquid alloy and a Ga oxide layer 5 coated on the outer surface of the needle tip. In this embodiment, the top electrode is composed of a gallium indium eutectic liquid alloy (EGaIn) and a Ga oxide layer, specifically, the needle tip 6 made of EGaIn is exposed to air, and Ga in EGaIn and oxygen in air can rapidly generate oxidation reaction to obtain the Ga oxide layer 5, that is, ga in the Ga oxide layer 5 comes from the needle tip 6 made of EGaIn. So that the Ga oxide layer 5 is coated on the outer surface of the needle tip, thereby obtaining a top electrode. In this embodiment, the Ga oxide layer 5 is Ga 2O3.
An organic molecular film 3, the organic molecular film 3 is connected between the conductive substrate 2 and the top electrode, and the organic molecular film 3 is a monomolecular layer of metal complex molecules. In this embodiment, a coordination compound (abbreviated as a complex or a complex) refers to a coordination polymer of a type formed by coordination bond between a metal ion (atom) and a ligand. Meanwhile, in this embodiment, the organic molecular film 3 is formed by soaking a conductive substrate containing ITO in a solution of metal complex molecules, which self-assemble on the surface of the ITO conductive film, using the self-assembly principle.
Therefore, the electrical test structure of the metal complex-based monolayer memristor is as follows: gallium indium eutectic liquid alloy/Ga oxide layer// organic molecular film/conductive substrate molecular junction, wherein "/" represents covalent bonds and "//" represents van der waals contacts.
And curing glue 4, and packaging the conductive substrate, the top electrode and the organic molecular film. In this embodiment, the cured adhesive 4 is used as an outer surface encapsulated between the conductive substrate, the top electrode, and the organic molecular film. Further, the curing glue is ultraviolet curing glue, and the glue dropping amount of the curing glue is 0.04-0.06ml. In this embodiment, the ultraviolet curing glue 4 is an ultraviolet curing glue, and the type of the ultraviolet curing glue is Norland NOA61 in America. The structure of the monomolecular layer is encapsulated by ultraviolet light curing glue, so that the instability during measurement is reduced, and the measurement quality of the monomolecular layer is greatly improved.
A drain electrode; the drain electrode is led out from the conductive substrate.
And the source electrode is led out from the needle point.
The drain electrode and the source electrode both comprise wires 8, the wires 8 of the drain electrode are led out from the conductive substrate, are electrically connected to the conductive substrate and are fixed through conductive adhesive 7; the lead 8 of the source is led out from the needle point 6, is electrically connected to the needle point 6 and is fixed by the conductive adhesive 7. The conducting wire 8 is a 0.64mm superfine single-core shielding wire, and the silver conductive adhesive 7 is SPI diluted conductive silver adhesive.
In the embodiment, a conical tip electrode is prepared by self-assembling a metal complex monolayer with a rectifying hysteresis phenomenon on ITO (indium tin oxide) conductive glass and EGaIn (gallium indium eutectic liquid alloy) is used as a top electrode, so that a EGaIn/Ga 2O3// metal complex self-assembled monolayer/ITO electrode molecular junction ("/" represents covalent bonds and "//" represents van der Waals contact) electrical measurement structure is formed, and the structure is packaged and cured by ultraviolet light curing glue and an ultraviolet lamp, so that the molecular-scale memristor package is realized.
Some preferred embodiments of the application are described below.
Further, the light transmittance of the ITO film 2 is 82% -86%, the resistance of the ITO film 2 is 6-8 ohms, and the thickness of the conductive substrate is 1-1.2mm.
In this embodiment, the light transmittance of the ITO film 2 is 84%, the resistance of the ITO film 2 is 7 ohms, and the thickness of the conductive substrate is 1.1mm. In other embodiments, the light transmittance of the ITO film 2 may be 82% or 86%, the resistance of the ITO film 2 may be 6 ohms or 8 ohms, and the thickness of the conductive substrate may be 1mm or 1.2mm.
Further, the gallium-indium ratio of the gallium-indium eutectic liquid alloy is 75:25 to 74.5:25.5. in this embodiment, the gallium-indium ratio of the gallium-indium eutectic liquid alloy is 75:25.
Example two
The preparation method of example one is described below.
A method for preparing a metal complex-based monolayer memristor, which is used for preparing the metal complex-based monolayer memristor, comprises the following steps:
S1, preparing the organic molecular film on the upper surface of the conductive substrate by utilizing a self-assembly principle; the preparation of the organic molecular film on the upper surface of the conductive substrate by utilizing the self-assembly principle comprises the following steps:
s1.1, soaking the conductive substrate in a solution containing metal complex molecules; in this example, glass containing an ITO coating was immersed in a metal complex solution for 24 hours, as shown in FIG. 2.
S1.2, utilizing a self-assembly principle to enable metal complex molecules to form a monomolecular layer on the surface of the conductive substrate.
S2, stretching the gallium indium eutectic liquid alloy into a needle point, and oxidizing the surface of the needle point to form a Ga oxide layer; in this example, the instrument was used to extrude EGaIn a microinjector, as shown in fig. 3, to contact EGaIn drops with the backsheet, as shown in fig. 4, and to stretch EGaIn drops to a needle tip, as shown in fig. 5. Thereby obtaining the needle point stretched by the gallium indium eutectic liquid alloy, and the outer surface of the needle point is rapidly oxidized to form Ga oxide.
And S3, moving the needle point towards the monomolecular layer and enabling the needle point to contact with the monomolecular layer to form a gallium-indium eutectic liquid alloy/Ga oxide layer// organic molecular film/conductive substrate molecular junction, wherein "/" represents a covalent bond, and "//" represents that the monomolecular alloy/Ga oxide layer// organic molecular film/conductive substrate molecular junction is in van der Waals contact with the gallium-indium eutectic liquid alloy/Ga oxide layer// organic molecular film/conductive substrate molecular junction. In the step, the substrate is replaced by ITO glass with a self-assembled monolayer, as shown in figure 6, and a EGaIn needle tip is slowly contacted with the self-assembled monolayer to form a certain contact area so as to form a molecular knot, as shown in figure 7;
S4, dropwise adding the curing adhesive, and packaging the conductive substrate, the top electrode and the organic molecular film, as shown in FIG. 8. The curing adhesive is specifically described in the embodiments and will not be described herein. In the step, 0.05ml of ultraviolet curing glue is dripped near a molecular junction, as shown in fig. 9, an ultraviolet lamp with the power of 15W and the wavelength of 365nm is used for irradiating for 1.5 hours, a microinjector is lifted, a lead wire and EGaIn are connected by silver conductive glue so as to lead out a source electrode, and the silver conductive glue is used for connecting the lead wire and an ITO substrate so as to lead out a drain electrode.
In this step, the electrical signal of the molecular junction during the process is measured and recorded simultaneously.
S5, leading out a source electrode from the needle point and leading out a drain electrode from the conductive substrate, as shown in fig. 10.
Further, the curing glue is an ultraviolet curing glue, the curing glue is dripped, and the packaging of the conductive substrate, the top electrode and the organic molecular film comprises:
and dripping the ultraviolet light curing adhesive into the gallium indium eutectic liquid alloy/Ga oxide layer// organic molecular film/conductive substrate molecular junction, and irradiating the ultraviolet light curing adhesive for 1.5h by using an ultraviolet lamp to cure the ultraviolet light curing adhesive.
Experimental data
After the memristor device based on the metal complex molecules is preheated for 2 hours under the voltage of 1.4V, IV is swept in the range of 1V to-1V, and the memristor IV curve based on the metal complex molecular layer device is shown as figures 11-12, so that the IV curve has the rectifying hysteresis phenomenon, and the switching ratio can reach 100. The IV curve shows the phenomenon of rectifying hysteresis, which shows that the molecular tunnel junction with rectifying hysteresis effect molecules can be used for preparing 1D-1RRRAM with molecular scale, so that the dual functions of a diode and a variable resistor are realized, and the device has the function of a memristor.
It should be noted that in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The invention may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The use of the words first, second, third, etc. do not denote any order. These words may be interpreted as names.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
In the description of the present invention, it should be understood that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms should not be understood as necessarily being directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
Claims (10)
1. A metal complex-based monolayer memristor, characterized in that: the electrical test structure of the metal complex-based monolayer memristor comprises the following steps: gallium indium eutectic liquid alloy/Ga oxide layer// organic molecular film/conductive substrate molecular junction, wherein "/" represents covalent bond, "//" represents van der waals contact between the two; the metal complex-based monolayer memristor includes:
A conductive substrate, the conductive substrate being plated with a translucent ITO film on an upper surface thereof;
The top electrode is a needle point containing gallium-indium eutectic liquid alloy and a Ga oxide layer coated on the outer surface of the needle point;
the organic molecular film is connected between the conductive substrate and the top electrode, is a monomolecular layer of metal complex molecules, is formed by soaking the conductive substrate in a solution of the metal complex molecules, and is formed by self-assembling the metal complex molecules on the surface of the ITO conductive film;
and curing the glue, and packaging the conductive substrate, the top electrode and the organic molecular film.
2. The metal-complex-based monolayer memristor of claim 1, wherein: the light passing rate of the ITO film is 82% -86%, the resistance of the ITO film is 6-8 ohms, and the thickness of the conductive substrate is 1-1.2mm.
3. The metal-complex-based monolayer memristor of claim 1, wherein: the gallium-indium ratio of the gallium-indium eutectic liquid alloy is 75:25 to 74.5:25.5.
4. The metal-complex-based monolayer memristor of claim 1, wherein: the curing glue is ultraviolet curing glue, and the glue dropping amount of the curing glue is 0.04-0.06ml.
5. The metal-complex-based monolayer memristor of claim 1, wherein: the drain electrode is led out of the conductive substrate, and comprises a wire which is connected to the conductive substrate through corresponding conductive adhesive.
6. The metal-complex-based monolayer memristor of claim 5, wherein: the conducting wire is a single-core shielding wire, and the conductive adhesive is diluted conductive silver adhesive.
7. The metal-complex-based monolayer memristor of claim 1, wherein: the needle comprises a source electrode, wherein the source electrode is led out from the needle point.
8. A method for preparing a metal complex-based monolayer memristor, which is used for preparing the metal complex-based monolayer memristor according to any one of claims 1 to 7, and is characterized in that: the method comprises the following steps:
Preparing the organic molecular film on the upper surface of the conductive substrate by utilizing a self-assembly principle;
Stretching the gallium indium eutectic liquid alloy into a needle point, and oxidizing the surface of the needle point to form a Ga oxide layer;
moving the needle tip towards the monolayer and contacting the needle tip to form a gallium-indium eutectic liquid alloy/Ga oxide layer// organic molecular film/conductive substrate molecular junction;
And dripping the curing adhesive, and packaging the conductive substrate, the top electrode and the organic molecular film.
9. The method for preparing the metal complex-based monolayer memristor, as set forth in claim 8, is characterized in that:
The preparation of the organic molecular film on the upper surface of the conductive substrate by utilizing the self-assembly principle comprises the following steps:
Immersing the conductive substrate in a solution containing metal complex molecules;
the metal complex molecules form a monomolecular layer on the surface of the conductive substrate by utilizing the self-assembly principle.
10. The method for preparing the metal complex-based monolayer memristor, as set forth in claim 8, is characterized in that: the curing glue is ultraviolet curing glue, the curing glue is dripped, and the packaging pair of the conductive substrate, the top electrode and the organic molecular film comprises:
and dripping the ultraviolet light curing adhesive into the gallium indium eutectic liquid alloy/Ga oxide layer// organic molecular film/conductive substrate molecular junction, and irradiating the ultraviolet light curing adhesive for 1.5h by using an ultraviolet lamp to cure the ultraviolet light curing adhesive.
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