CN114420810A - High-power LED and preparation method thereof - Google Patents

High-power LED and preparation method thereof Download PDF

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CN114420810A
CN114420810A CN202111589422.3A CN202111589422A CN114420810A CN 114420810 A CN114420810 A CN 114420810A CN 202111589422 A CN202111589422 A CN 202111589422A CN 114420810 A CN114420810 A CN 114420810A
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buffer layer
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高芳亮
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Yixing Qurong Photoelectric Technology Co ltd
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Yixing Qurong Photoelectric Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention discloses a high-power LED (light emitting diode) and a preparation method thereof, and the high-power LED comprises a silicon carbide substrate, wherein an AlN buffer layer is arranged on one side of the silicon carbide substrate, an InGaN buffer layer is arranged on one side of the AlN buffer layer, and an undoped InGaN layer, an n-type doped InGaN layer, an InGaN/GaN multi-quantum well layer, an In component gradually-changed sawtooth type electronic barrier layer and a p-type doped GaN film are arranged on one side of the InGaN buffer layer. According to the invention, silicon carbide is used as a substrate of the LED to prepare the GaN-based blue LED, the In component gradually-changed sawtooth-type electronic barrier layer is adopted, the electron and hole concentrations of the LED adopting the sawtooth-structure electronic barrier layer are higher than those of the LED adopting the conventional single-component electronic barrier layer, and the carrier concentration distribution is relatively uniform; and the leakage of electrons can be effectively reduced, and the injection of holes is increased, so that the recombination rate of current carriers is improved, and the optical performance of the LED is improved.

Description

High-power LED and preparation method thereof
Technical Field
The invention relates to the field of semiconductor illumination, in particular to a high-power LED and a preparation method thereof.
Background
Group III nitride GaN has extremely excellent properties in electrical, optical, and acoustic properties, and has received much attention in recent years. GaN is a direct band gap material, and has fast acoustic transmission speed, good chemical and thermal stability, high thermal conductivity, low thermal expansion coefficient, and high breakdown dielectric strength, and is an ideal material for manufacturing high-efficiency semiconductor devices, such as LED devices. At present, the luminous efficiency of GaN-based LEDs has now reached 28% and is further increasing, which is far higher than that of the illumination systems such as incandescent lamps (about 2%) and fluorescent lamps (about 10%) which are generally used at present.
To truly realize large-scale and wide application of the LED, the light emitting efficiency of the LED chip needs to be further improved, and the price of the LED chip is reduced. Although the luminous efficiency of LEDs has surpassed that of fluorescent and incandescent lamps, commercial LEDs are still less efficient than sodium lamps (150lm/W), and the price per lumen/watt is higher. However, at present, the high defect density, strong spontaneous emission and piezoelectric polarization of the III-nitride materials cause serious non-radiative recombination, and the design of the LED quantum well and the electron blocking layer is not perfect, which cause phenomena such as electron leakage, low hole injection efficiency, and uneven carrier distribution, so that the light emitting efficiency and the external quantum efficiency of the LED have a further improved space.
Disclosure of Invention
The invention aims to: in order to solve the problems of the background art, a high-power LED and a manufacturing method thereof are provided.
In order to achieve the purpose, the invention provides the following technical scheme: a high-power LED comprises a silicon carbide substrate, wherein an AlN buffer layer is arranged on one side of the silicon carbide substrate, and the silicon carbide substrate and the AlN buffer layer are used for reducing the lattice mismatch degree between the silicon carbide substrate and an InGaN material; an InGaN buffer layer is arranged on one side of the AlN buffer layer and used for providing a template for growing an InGaN material; one side of the InGaN buffer layer is provided with an undoped InGaN layer, an n-type doped InGaN layer, an InGaN/GaN multi-quantum well layer, an In component graded sawtooth type electronic barrier layer and a p-type doped GaN film; the n-type doped InGaN layer, the InGaN/GaN multi-quantum well layer and the p-type doped GaN film form a light emitting layer.
A preparation method of a high-power LED comprises the following steps: s1, growing an AlN buffer layer on the silicon carbide substrate; s2: growing an InGaN buffer layer on the AlN buffer layer; s3: growing an undoped InGaN layer on the InGaN buffer layer; s4: epitaxially growing an n-type doped InGaN layer on the undoped InGaN layer; s5, epitaxially growing an InGaN/GaN multi-quantum well layer on the n-type doped InGaN layer; s6: epitaxially growing an In component graded sawtooth type electronic barrier layer on the InGaN/GaN multi-quantum well layer; s7: and epitaxially growing a p-type doped GaN film on the In-component-gradient sawtooth-type electron blocking layer.
Preferably, in the step S1, an AlN buffer layer is grown by physical vapor deposition, wherein the growth temperature is 400 to 500 ℃, and the thickness of the AlN buffer layer is 5to 50 nm.
Preferably, in the step S2, an InGaN buffer layer is grown on the AlN buffer layer by a metal organic chemical vapor deposition method, the pressure of the reaction chamber is 50-300 torr, the growth temperature is 1000-1260 ℃, the beam current ratio V/III is 3000-5000, and the growth rate is 2-4 μm/h.
Preferably, in the above S3, an undoped InGaN layer is grown on the InGaN buffer layer by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure in the reaction chamber is 50-300 torr, the growth temperature is 1000-1260 ℃, the beam current ratio V/III is 3000-5000, and the growth rate is 2-4 μm/h.
Preferably, in the above S4, an n-type doped InGaN layer is grown on the undoped InGaN layer by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure of the reaction chamber is 50-300 torr, the growth temperature is 1000-1260 ℃, the beam current ratio V/III is 3000-5000, and the growth rate is 2-4 mu m/h; the n-type doped InGaN layer is doped with Si, and the doping concentration of the Si is 1 x 1017-1 x 1020cm < -3 >.
Preferably, in S5, an InGaN well layer/GaN barrier layer is grown on the n-type doped InGaN layer for 7 to 10 periods by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure in the reaction chamber is 50-300 torr, the growth temperature is 1000-1260 ℃, the beam current ratio V/III is 3000-5000, and the growth rate is 2-4 μm/h.
Preferably, in S6, an InGaN electron blocking layer is grown on the InGaN/GaN multi-quantum well layer by using a metal organic chemical vapor deposition method, where the process conditions are as follows: the pressure in the reaction chamber is 50-300 torr, the growth temperature is 1000-1260 ℃, the beam current ratio V/III is 3000-5000, and the growth rate is 2-4 μm/h.
Preferably, in the above S7, a p-type doped GaN film is grown on the electron blocking layer by metal organic chemical vapor deposition, and the process conditions are as follows: the pressure in the reaction chamber is 50to 300torr, the growth temperature is 1000 to 1060 ℃, the beam current ratio V/III is 3000 to 5000, and the growth rate is 2 to 4 μm/h.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, silicon carbide is used as a substrate of the LED to prepare the GaN-based blue LED, the In component gradually-changed sawtooth-type electronic barrier layer is adopted, the electron and hole concentrations of the LED adopting the sawtooth-structure electronic barrier layer are higher than those of the LED adopting the conventional single-component electronic barrier layer, and the carrier concentration distribution is relatively uniform; the GaN-based LED epitaxial wafer adopting the In component gradually-changed sawtooth type electronic barrier layer structure can effectively reduce the leakage of electrons and increase the injection of holes, thereby improving the recombination rate of current carriers and improving the optical performance of the LED; the preparation process is simple, has repeatability and can realize large-scale production and application.
Drawings
FIG. 1 is a schematic view of an LED package structure prepared according to the present invention;
fig. 2 is an EL spectrum of an LED epitaxial wafer prepared according to the present invention.
In the figure: the electroluminescent peak is 455.6nm, the half-peak width is 22.2nm, the current illumination requirement level is reached, and the excellent electrical properties of the high-power LED device prepared by the invention are shown.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The following describes an embodiment of the present invention based on its overall structure.
Referring to fig. 1-2, a high power LED includes a silicon carbide substrate 10, an AlN buffer layer 11 is disposed on one side of the silicon carbide substrate 10, and the silicon carbide substrate 10 and the AlN buffer layer 11 are used to reduce lattice mismatch between the silicon carbide substrate and an InGaN material; one side of the AlN buffer layer 11 is provided with an InGaN buffer layer 12 for providing a template for growing an InGaN material; one side of the InGaN buffer layer 12 is provided with an undoped InGaN layer 13, an n-type doped InGaN layer 14, an InGaN/GaN multi-quantum well layer 15, an In-component graded sawtooth-type electronic barrier layer 16 and a p-type doped GaN thin film 17; the inventive n-type doped InGaN layer 14, InGaN/GaN multiple quantum well layer 15, and p-type doped GaN thin film 17 constitute a light emitting layer.
A preparation method of a high-power LED comprises the following steps: s1, growing an AlN buffer layer on the silicon carbide substrate; s2: growing an InGaN buffer layer on the AlN buffer layer; s3: growing an undoped InGaN layer on the InGaN buffer layer; s4: epitaxially growing an n-type doped InGaN layer on the undoped InGaN layer; s5, epitaxially growing an InGaN/GaN multi-quantum well layer on the inventive n-type doped InGaN layer; s6: epitaxially growing an In component graded sawtooth type electronic barrier layer on the InGaN/GaN multi-quantum well layer; s7: and epitaxially growing a p-type doped GaN film on the In-component-graded sawtooth-type electron barrier layer.
Example 1
In the above S1, an AlN buffer layer was grown by physical vapor deposition at a growth temperature of 400 ℃ to a thickness of 5 nm.
In the S2, an InGaN buffer layer is grown on the AlN buffer layer by adopting a metal organic chemical vapor deposition method, the pressure of a reaction chamber is 50torr, the growth temperature is 1000 ℃, the beam current ratio V/III is 3000, and the growth rate is 2 mu m/h.
In the above S3, an undoped InGaN layer is grown on the InGaN buffer layer of the invention by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure in the reaction chamber is 50torr, the growth temperature is 1000 ℃, the beam current ratio V/III is 3000, and the growth rate is 2 μm/h.
In the above S4, an n-type doped InGaN layer is grown on the inventive undoped InGaN layer by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure of the reaction chamber is 50torr, the growth temperature is 1000 ℃, the beam current ratio V/III is 3000, and the growth rate is 2 mu m/h; the n-type doped InGaN layer is doped with Si, and the doping concentration of the Si is 1 x 1017-1 x 1020cm < -3 >.
In the above S5, an InGaN well layer/GaN barrier layer is grown on the inventive n-type doped InGaN layer for 7 periods by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure in the reaction chamber is 50torr, the growth temperature is 1000 ℃, the beam current ratio V/III is 3000, and the growth rate is 2 μm/h.
In the above S6, an InGaN electronic barrier layer is grown on the InGaN/GaN multi-quantum well layer of the invention by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure in the reaction chamber is 50torr, the growth temperature is 1000 ℃, the beam current ratio V/III is 3000, and the growth rate is 2 μm/h.
In the above S7, a p-type doped GaN film is grown on the inventive electron blocking layer by metal organic chemical vapor deposition, and the process conditions are as follows: the pressure in the reaction chamber is 50torr, the growth temperature is 1000 ℃, the beam current ratio V/III is 3000, and the growth rate is 2 μm/h.
Example 2
In the above S1, an AlN buffer layer was grown by physical vapor deposition at a growth temperature of 450 ℃ to a thickness of 27 nm.
In the above S2, an InGaN buffer layer is grown on the AlN buffer layer by using a metal organic chemical vapor deposition method, the pressure of the reaction chamber is 175torr, the growth temperature is 1130 ℃, the beam current ratio V/III is 4000, and the growth rate is 3 μm/h.
In the above S3, an undoped InGaN layer is grown on the InGaN buffer layer of the invention by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure in the reaction chamber was 175torr, the growth temperature was 1130 ℃, the beam current ratio V/III was 4000, and the growth rate was 3 μm/h.
In the above S4, an n-type doped InGaN layer is grown on the inventive undoped InGaN layer by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure in the reaction chamber is 175torr, the growth temperature is 1130 ℃, the beam current ratio V/III is 4000, and the growth rate is 3 mu m/h; the n-type doped InGaN layer is doped with Si, and the doping concentration of the Si is 1 x 1017-1 x 1020cm < -3 >.
In the above S5, an InGaN well layer/GaN barrier layer is grown on the inventive n-type doped InGaN layer for 8 periods by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure in the reaction chamber was 175torr, the growth temperature was 1130 ℃, the beam current ratio V/III was 4000, and the growth rate was 3 μm/h.
In the above S6, an InGaN electronic barrier layer is grown on the InGaN/GaN multi-quantum well layer of the invention by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure in the reaction chamber was 175torr, the growth temperature was 1130 ℃, the beam current ratio V/III was 4000, and the growth rate was 3 μm/h.
In the above S7, a p-type doped GaN film is grown on the inventive electron blocking layer by metal organic chemical vapor deposition, and the process conditions are as follows: the pressure in the reaction chamber was 175torr, the growth temperature was 1130 ℃, the beam current ratio V/III was 4000, and the growth rate was 3 μm/h.
Example 3
In the above S1, an AlN buffer layer was grown by physical vapor deposition at a growth temperature of 500 ℃ to a thickness of 50 nm.
In the above S2, an InGaN buffer layer is grown on the AlN buffer layer by a metal organic chemical vapor deposition method, the pressure of the reaction chamber is 300torr, the growth temperature is 1260 ℃, the beam current ratio V/III is 5000, and the growth rate is 4 μm/h.
In the above S3, an undoped InGaN layer is grown on the InGaN buffer layer of the invention by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure in the reaction chamber was 300torr, the growth temperature was 1260 ℃, the beam current ratio V/III was 5000, and the growth rate was 4 μm/h.
In the above S4, an n-type doped InGaN layer is grown on the inventive undoped InGaN layer by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure of the reaction chamber is 300torr, the growth temperature is 1260 ℃, the beam current ratio V/III is 5000, and the growth rate is 4 mu m/h; the n-type doped InGaN layer is doped with Si, and the doping concentration of the Si is 1 x 1017-1 x 1020cm < -3 >.
In the above S5, an InGaN well layer/GaN barrier layer is grown on the inventive n-type doped InGaN layer for 10 periods by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure in the reaction chamber was 300torr, the growth temperature was 1260 ℃, the beam current ratio V/III was 5000, and the growth rate was 4 μm/h.
In the above S6, an InGaN electronic barrier layer is grown on the InGaN/GaN multi-quantum well layer of the invention by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure in the reaction chamber was 300torr, the growth temperature was 1260 ℃, the beam current ratio V/III was 5000, and the growth rate was 4 μm/h.
In the above S7, a p-type doped GaN film is grown on the inventive electron blocking layer by metal organic chemical vapor deposition, and the process conditions are as follows: the pressure in the reaction chamber was 300torr, the growth temperature was 1060 deg.C, the beam current ratio V/III was 5000, and the growth rate was 4 μm/h.
Through the provided silicon carbide substrate 10; the AlN buffer layer 11 is used for reducing the lattice mismatch degree between the silicon carbide substrate and the InGaN material; the InGaN buffer layer 12 is used for providing a template for growing a high-quality InGaN material; an undoped InGaN layer 13, in which an undoped InGaN layer is grown before the active layer (i.e., n-type, multi-quantum well layer, p-type layer) is grown because the InGaN buffer layer has a high defect density; an n-type doped InGaN layer 14; an InGaN/GaN MQW layer 15; an In-component-graded sawtooth-type electron blocking layer 16; a p-type doped GaN film 17.
The n-type doped InGaN, InGaN/GaN multi-quantum well layer and the p-type doped GaN form a light emitting layer; in order to avoid that the injected electrons cannot be efficiently radiatively recombined in the active region, an electron blocking layer is interposed between the p-type GaN and the quantum barrier.
According to the GaN-based LED with the In-component gradually-changed sawtooth-shaped electronic barrier layer structure, the polarized electric field intensity at the interface between the electronic barrier layer/p-GaN and the electronic barrier layer/multi-quantum well barrier layer is reduced to a great extent, the energy band bending of the interface is effectively inhibited, the accumulation of electrons and holes at the interface is reduced, meanwhile, the effective barrier height of the electrons is improved, the electron leakage is reduced, and the radiation recombination of the electrons and the holes In an active region is increased; the preparation process is simple, has repeatability and can realize large-scale production.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.

Claims (9)

1. A high power LED comprising a silicon carbide substrate, characterized in that: an AlN buffer layer is arranged on one side of the silicon carbide substrate, and the silicon carbide substrate and the AlN buffer layer are used for reducing the lattice mismatch degree between the silicon carbide substrate and the InGaN material;
an InGaN buffer layer is arranged on one side of the AlN buffer layer and used for providing a template for growing an InGaN material; one side of the InGaN buffer layer is provided with an undoped InGaN layer, an n-type doped InGaN layer, an InGaN/GaN multi-quantum well layer, an In component graded sawtooth type electronic barrier layer and a p-type doped GaN film;
the n-type doped InGaN layer, the InGaN/GaN multi-quantum well layer and the p-type doped GaN film form a light emitting layer.
2. The method for preparing a high-power LED according to claim 1, comprising the following steps:
s1, growing an AlN buffer layer on the silicon carbide substrate;
s2: growing an InGaN buffer layer on the AlN buffer layer;
s3: growing an undoped InGaN layer on the InGaN buffer layer;
s4: epitaxially growing an n-type doped InGaN layer on the undoped InGaN layer;
s5, epitaxially growing an InGaN/GaN multi-quantum well layer on the n-type doped InGaN layer;
s6: epitaxially growing an In component graded sawtooth type electronic barrier layer on the InGaN/GaN multi-quantum well layer;
s7: and epitaxially growing a p-type doped GaN film on the In-component-gradient sawtooth-type electron blocking layer.
3. The method for preparing a high-power LED according to claim 2, wherein the method comprises the following steps: and growing an AlN buffer layer in the S1 by adopting a physical vapor deposition method, wherein the growth temperature is 400-500 ℃, and the thickness of the AlN buffer layer is 5-50 nm.
4. The method for preparing a high-power LED according to claim 2, wherein the method comprises the following steps: and in the S2, growing an InGaN buffer layer on the AlN buffer layer by adopting a metal organic chemical vapor deposition method, wherein the pressure of a reaction chamber is 50-300 torr, the growth temperature is 1000-1260 ℃, the beam current ratio V/III is 3000-5000, and the growth rate is 2-4 mu m/h.
5. The method for preparing a high-power LED according to claim 2, wherein the method comprises the following steps: in the above S3, an undoped InGaN layer is grown on the InGaN buffer layer by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure in the reaction chamber is 50-300 torr, the growth temperature is 1000-1260 ℃, the beam current ratio V/III is 3000-5000, and the growth rate is 2-4 μm/h.
6. The method for preparing a high-power LED according to claim 2, wherein the method comprises the following steps: in the above S4, an n-type doped InGaN layer is grown on the undoped InGaN layer by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure of the reaction chamber is 50-300 torr, the growth temperature is 1000-1260 ℃, the beam current ratio V/III is 3000-5000, and the growth rate is 2-4 mu m/h; the n-type doped InGaN layer is doped with Si, and the doping concentration of the Si is 1 x 1017-1 x 1020cm < -3 >.
7. The method for preparing a high-power LED according to claim 2, wherein the method comprises the following steps: in the step S5, an InGaN well layer/GaN barrier layer is grown on the n-type doped InGaN layer for 7 to 10 periods by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure in the reaction chamber is 50-300 torr, the growth temperature is 1000-1260 ℃, the beam current ratio V/III is 3000-5000, and the growth rate is 2-4 μm/h.
8. The method for preparing a high-power LED according to claim 2, wherein the method comprises the following steps: in the above S6, an InGaN electronic barrier layer is grown on the InGaN/GaN multi-quantum well layer by using a metal organic chemical vapor deposition method, and the process conditions are as follows: the pressure in the reaction chamber is 50-300 torr, the growth temperature is 1000-1260 ℃, the beam current ratio V/III is 3000-5000, and the growth rate is 2-4 μm/h.
9. The method for preparing a high-power LED according to claim 2, wherein the method comprises the following steps: in the above S7, growing a p-type doped GaN film on the electron blocking layer by metal organic chemical vapor deposition, the process conditions are as follows: the pressure in the reaction chamber is 50to 300torr, the growth temperature is 1000 to 1060 ℃, the beam current ratio V/III is 3000 to 5000, and the growth rate is 2 to 4 μm/h.
CN202111589422.3A 2021-12-23 2021-12-23 High-power LED and preparation method thereof Pending CN114420810A (en)

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