CN114415422A - High-temperature-resistant quantum dot optical plate, preparation method thereof and ultrathin backlight module - Google Patents
High-temperature-resistant quantum dot optical plate, preparation method thereof and ultrathin backlight module Download PDFInfo
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
- G02F1/133607—Direct backlight including a specially adapted diffusing, scattering or light controlling members the light controlling member including light directing or refracting elements, e.g. prisms or lenses
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B29C48/03—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor characterised by the shape of the extruded material at extrusion
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
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- Mechanical Engineering (AREA)
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- Planar Illumination Modules (AREA)
Abstract
The invention belongs to the technical field of backlight and illumination, and particularly relates to a high-temperature-resistant quantum dot optical plate, a preparation method thereof and an ultrathin backlight module, wherein the high-temperature-resistant quantum dot optical plate comprises a first heat-insulating light-guiding layer, a second heat-insulating light-guiding layer and a quantum dot layer which are sequentially arranged, the first heat-insulating light-guiding layer and the second heat-insulating light-guiding layer are both provided with a foaming structure, and the heat conductivity coefficient is not more than 0.2W/(m.K); and the refractive indexes of the first heat insulation light guide layer and the second heat insulation light guide layer are sequentially increased, and the refractive index of the quantum dot layer is not less than that of the second heat insulation light guide layer. The high-temperature-resistant quantum dot optical plate can resist the high temperature of a light source, can give consideration to the good light conduction performance of the quantum dot layer, can meet the light and thin use scene, and is suitable for an ultrathin backlight module.
Description
Technical Field
The invention belongs to the technical field of backlight and illumination, and particularly relates to a high-temperature-resistant quantum dot optical plate, a preparation method thereof and an ultrathin backlight module.
Background
The quantum dot material has the characteristics of wide excitation spectrum, narrow emission spectrum, high color purity and good light stability, is applied to the display field, can effectively improve the color gamut of equipment, and enables the display effect of the equipment to be more excellent, fresh and vivid and be attractive. Meanwhile, televisions, computer monitors, pads and mobile phones are all developing towards being light and thin, so that the light and thin quantum dot optical backlight module with low cost, high stability and high color gamut is prepared, more excellent optical properties of quantum dot materials can be effectively applied to the existing backlight display system, and the high color gamut display technology of quantum dots is civilized and popularized.
However, the prior art still has the following disadvantages:
although the existing quantum dot optical plate can meet the requirements of a direct type backlight module, in the direct type backlight module, on one hand, the distance between a lamp and the optical plate needs to be controlled to meet the requirement of light diffusion, because if the distance is too short, light is emitted from lamp beads, and when the light is not diffused, the light directly enters the optical plate, so that light with uneven brightness appears on the optical plate; on the other hand, the optical plate has limited temperature tolerance, and the quantum dot optical plate is influenced by the temperature (more than 80 ℃) of a close-distance light source and can deform to influence the performance of a quantum dot material; therefore, a certain heat dissipation distance is required to be kept with the light source. These problems result in the quantum dot optical plate failing to satisfy a light and thin usage scenario. In the prior art, the backlight module manufactured by the quantum dot optical plate has a thickness of 50-100mm generally, and cannot meet the requirements of lightness and thinness.
Therefore, there is a need in the art for a thin quantum dot optical plate that is resistant to high temperatures.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides a high-temperature-resistant quantum dot optical plate, a preparation method thereof and an ultrathin backlight module.
In order to achieve the above object, in a first aspect, the present invention provides a high temperature resistant quantum dot optical plate, including a first heat insulation and light guide layer, a second heat insulation and light guide layer, and a quantum dot layer, which are sequentially disposed, wherein each of the first heat insulation and light guide layer and the second heat insulation and light guide layer has a foam structure, and a thermal conductivity is not greater than 0.2W/(m · K); and the refractive indexes of the first heat insulation light guide layer and the second heat insulation light guide layer are sequentially increased, and the refractive index of the quantum dot layer is not less than that of the second heat insulation light guide layer.
In some preferred embodiments, the first thermally insulated light guiding layer satisfies: the light transmittance is not less than 60 percent, and the haze is not less than 80 percent; the second heat insulation light guide layer meets the following requirements: the light transmittance is not less than 60 percent, and the haze is not less than 90 percent.
In some preferred embodiments, the first heat-insulating light-guiding layer is a composite foamed layer containing a polymer material and silicone, and the second heat-insulating light-guiding layer is a foamed layer of a polymer material.
In some preferred embodiments, the silicone is a silicone resin, and the polymer material includes at least one of PP, PE, PS, PMMA, PET, MS, and PC.
In some preferred embodiments, the foamed structures in the first and second thermally insulated light guiding layers each independently satisfy: the foaming ratio is 0.3-4, and the average diameter of the bubbles is 0.1-20 μm. In some preferred embodiments, the first insulated light guiding layer and the second insulated light guiding layer each independently satisfy: the foaming ratio is 0.5-2, and the average diameter of the bubbles is 0.1-5 μm.
In some preferred embodiments, the foaming ratio of the second insulated light guiding layer foaming structure is not greater than that of the first insulated light guiding layer, and the average diameter of bubbles of the second insulated light guiding layer foaming structure is not greater than that of the first insulated light guiding layer.
In some preferred embodiments, in the direction away from the second heat insulation and light guide layer, the surface of the quantum dot layer has a microstructure, and the microstructure is plate-shaped, arc-shaped or a combination of the two.
In some preferred embodiments, the microstructures are prismatic structures.
In some preferred embodiments, the microstructures have a maximum height in the range of 2 to 120 μm; the microstructure has a vertex at an angle of 45-135 °.
In some preferred embodiments, the microstructures have a maximum height in the range of 20 to 30 μm; the microstructure has a vertex at an angle of 75-120 °.
In some preferred embodiments, the quantum dot layer comprises a quantum dot material and a polymeric substrate, and optionally a light diffuser.
In some preferred embodiments, the thickness of the high temperature resistant quantum dot optical plate is 0.5 to 4 mm.
In some preferred embodiments, the thicknesses of the first and second heat-insulating and light-guiding layers are 0.1-1.5mm, and the thickness of the quantum dot layer is 0.1-1.5 mm.
In a second aspect, the present invention provides a method for preparing a high temperature resistant quantum dot optical plate, including the following steps:
selecting a first heat-insulating light-guiding material, a second heat-insulating light-guiding material and a quantum dot material as required;
carrying out first melt extrusion on a first heat-insulation light-guide material and a first foaming agent to obtain a first mixture;
performing second melt extrusion on a second heat-insulation light-guide material and a second foaming agent to obtain a second mixture;
carrying out third melt extrusion on the quantum dot material, the high-molecular base material and the optional light diffusant to obtain a third mixture;
and (3) laminating and molding the first mixture, the second mixture and the third mixture.
In some preferred embodiments, the method further comprises: and pressing a microstructure on the surface of the quantum dot layer in the plate obtained after the forming.
In a third aspect, the present invention provides an ultrathin backlight module, including a light source and the high temperature resistant quantum dot optical plate of the first aspect, where the light source is disposed near or in contact with the first heat insulation and light guide layer.
In some preferred embodiments, the thickness of the ultra-thin backlight module is 4-30 mm.
In the prior art, the quantum dot optical plate needs to keep a certain distance from a light source to be resistant to the high temperature of the light source, otherwise, the performance of a quantum dot material is affected, and the quantum dot optical plate is deformed; therefore, it cannot satisfy the light and thin usage scenario. Meanwhile, the quantum dot optical plate also needs to be kept a certain distance from the light source to meet the requirements of light conduction, especially light diffusion. Therefore, in order to satisfy a light and thin usage scenario, both heat resistance and light transmission performance must be considered.
According to the invention, the first heat-insulation light-guide layer, the second heat-insulation light-guide layer and the quantum dot layer with specific heat conductivity and specific refractive index change are arranged, on one hand, the influence of temperature on the quantum dot layer can be effectively blocked, specifically, the heat at a near light position is blocked layer by layer, so that the temperature of the quantum dot layer is reduced, the influence of temperature on a quantum dot material is reduced, the quantum dot optical plate can not deform when being influenced by a short-distance light source temperature (more than 80 ℃), and the fluorescence retention rate of the quantum dot layer is prolonged. The quantum dot optical plate can be directly contacted with a light source (especially a lamp bead) at a short distance for use; on the other hand, through the specific arrangement of the foaming structure and the refractive index change, the optical plate can well diffuse light, so that the light entering the quantum dot layer is more uniform, the quantum dots can more effectively utilize incident light, and more uniform mixed light is emitted; therefore, the high-temperature resistant quantum dot optical plate obtains good optical performance. The high-temperature-resistant quantum dot optical board can meet the requirements of light and thin use scenes, and the applicable equipment terminal is limited on a television and a computer display from the past, can be popularized to terminals such as a notebook computer, a pad and a mobile phone, and can be used in multiple directions; and the preparation cost is low.
The backlight module provided by the invention is light and thin, application scenes of the quantum dot optical plate are further increased, and the high-color-gamut display technology of the quantum dots can be well civilized and popularized.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of one embodiment of a high temperature resistant quantum dot optical plate of the present invention.
Fig. 2 is a flow chart of a method of making a high temperature resistant quantum dot optical plate of the present invention.
FIG. 3 is a schematic structural diagram of an ultra-thin backlight module according to an embodiment of the present invention.
Description of the reference numerals
1-a first heat insulation light guide layer, 2-a second heat insulation light guide layer, 3-a quantum dot layer, 4-a light source, 5-a liquid crystal panel and A-a high temperature resistant quantum dot optical plate.
Detailed Description
The endpoints of the ranges and any values disclosed herein are not limited to the precise range or value, and such ranges or values should be understood to encompass values close to those ranges or values. For ranges of values, between the endpoints of each of the ranges and the individual points, and between the individual points may be combined with each other to give one or more new ranges of values, and these ranges of values should be considered as specifically disclosed herein.
In a first aspect, the present invention provides a high temperature resistant quantum dot optical plate, as shown in fig. 1, including a first heat insulation and light guide layer 1, a second heat insulation and light guide layer 2, and a quantum dot layer 3, which are sequentially disposed, where the first heat insulation and light guide layer 1 and the second heat insulation and light guide layer 2 both have a foam structure, and have a thermal conductivity not greater than 0.2W/(m · K); and the refractive indexes of the first heat insulation light guide layer 1 and the second heat insulation light guide layer 2 are sequentially increased, and the refractive index of the quantum dot layer 3 is not less than that of the second heat insulation light guide layer 2.
The quantum dot optical plate provided by the invention can give consideration to both high temperature resistance and light transmission performance, and when the quantum dot optical plate is applied, the temperature difference between the near lamp and the far lamp is large, the haze is high, and the quantum dot optical plate has high brightness. According to the invention, when the temperature of the close-range light source 4 (greater than 80 ℃) is influenced, the quantum dot optical plate does not deform, the use distance between light and the quantum dot optical plate can be reduced, and thus the thickness of an optical device is reduced; meanwhile, the specific setting of multiple optical diffusion and refractive index change is adopted, so that the light is diffused layer upon layer, the propagation distance and direction of the light in each layer are increased, the quantum dot optical plate still has a good light equalizing effect when used at a short distance, the haze and brightness requirements of the quantum dot optical plate are met, and the quantum dot optical plate can be matched with the light source 4 in a close distance to use and meet good visual requirements.
The present invention is applicable to a wide range of refractive indexes of the first heat-insulating light-guiding layer 1, the second heat-insulating light-guiding layer 2, and the quantum dot layer 3, as long as the above refractive index change is satisfied, and those skilled in the art can further select an appropriate range based on this.
In the present invention, the "first heat-insulating light-guiding layer 1" and the "second heat-insulating light-guiding layer 2" respectively refer to corresponding layers that have heat-insulating and light-guiding functions. It all satisfies above-mentioned specific coefficient of heat conductivity, and has the foaming structure for it can compromise high temperature resistant and light conduction performance.
More preferably, the thermal conductivity of the first heat insulation and light guide layer 1 and the second heat insulation and light guide layer 2 is sequentially reduced. This preferred scheme is more favorable to improving thermal-insulated effect.
The "foamed structure" according to the present invention means that there are several bubbles in the respective layers.
In some preferred embodiments, the first insulated light guiding layer 1 satisfies: the light transmittance is not less than 60 percent, and the haze is not less than 80 percent; the second heat insulation light guide layer 2 satisfies: the light transmittance is not less than 60 percent, and the haze is not less than 90 percent. Under this preferred scheme, more do benefit to the light conduction performance who improves two thermal-insulated leaded light layers to satisfy the optics diffusion and the luminance requirement of quantum dot optical plate, make quantum dot can more effective utilization incident light.
The skilled person will be able to select the materials of the layers according to the heat and light resistance requirements of the layers described above.
In some preferred embodiments, the first heat-insulating and light-guiding layer 1 is a composite foamed layer containing a polymer material and silicone, and the second heat-insulating and light-guiding layer 2 is a foamed layer of a polymer material.
The composite foaming layer containing the high polymer material and the organic silicon is a layer formed by arranging a foaming structure in the composite of the high polymer material and the organic silicon, air is wrapped in bubbles of the foaming structure, the air has low heat conductivity coefficient and poor heat transfer effect, so that the heat conductivity coefficient of the layer is reduced, and the layer is a layer which is in direct contact with the light source 4 and can endure the temperature range of-50 ℃ to 200 ℃; meanwhile, the refractive index of air is different from that of the high polymer material and the organosilicon, so that the light can form refraction and reflection phenomena when passing through the bubbles, and the existence of the bubbles increases the light propagation distance and direction, so that the light is fully diffused in the composite foaming layer.
In some embodiments, the silicone is a silicone resin.
The high polymer material foaming layer is formed by arranging a foaming structure in a high polymer material, air can be wrapped in bubbles of the foaming structure, the air has low heat conductivity coefficient and poor heat transfer effect, and the influence of temperature on the quantum dot layer 3 can be further reduced; meanwhile, the refractive index of the air is different from that of the high polymer material, so that the light can form refraction and reflection phenomena when passing through bubbles, the light propagation distance and direction are increased, and the light is fully diffused in a high polymer material foaming layer.
The high polymer materials in the first heat insulation light guide layer and the second heat insulation light guide layer can be the same or different. Illustratively, the polymer material includes, but is not limited to, at least one of PP, PE, PS, PMMA, PET, MS, and PC.
The arranged composite foaming layer containing the high polymer material and the organic silicon has good heat resistance and certain heat insulation performance, and blocks a part of heat, the arranged high polymer material foaming layer can avoid the influence of high temperature of a light source, and the high polymer material foaming layer can further improve the heat insulation performance and reduce the influence of the heat on the quantum dot layer 3; meanwhile, light can better penetrate through the base material to reach the quantum dot layer 3, and the brightness of the high-temperature-resistant quantum dot optical plate is improved.
In some preferred embodiments, the foamed structures in the first insulated light guiding layer 1 and the second insulated light guiding layer 2 each independently satisfy: the foaming ratio is 0.3-4, and the average diameter of the bubbles is 0.1-20 μm. The expansion ratio may be, for example, any one of 0.3, 0.5, 1, 1.5, 2, 2.5, 3, 3.5, 4 and any value between adjacent dot values. The average diameter of the bubbles may be, for example, any one of 0.1, 0.5, 1, 1.5, 2, 2.5, 3, 3.5, 4, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 μm and any value between adjacent points.
"average diameter of the bubbles" means the arithmetic mean of the diameters of several bubbles.
More preferably, the first insulated light guiding layer 1 and the second insulated light guiding layer 2 independently satisfy: the foaming multiplying power is 0.5-2; the average diameter of the bubbles is 0.1-5 μm.
In the scheme of the invention that the foaming ratio and the bubble size (represented by the average diameter) are optimized, the bubble size and the foaming ratio between the layers are further set, so that light can be better transmitted from the first heat-insulation light-guide layer 1 to the second heat-insulation light-guide layer 2, and more light can enter the quantum dot layer 3 and be utilized by quantum dots; the more the number of the bubbles is, the stronger the reflectivity of the bubbles to light rays is, the better light diffusivity and brightness are obtained, the reflection and refraction effects of the light rays in the layer need to be considered, and the temperature resistance is also considered.
In some preferred embodiments, the foaming ratio of the second insulating and light guiding layer 2 is not greater than that of the first insulating and light guiding layer 1, and the average diameter of the bubbles is not greater than that of the first insulating and light guiding layer 1.
In the preferred scheme of gradient change of the foaming structure, more light rays can be transmitted in the process that the light rays enter the second heat-insulation light-guiding layer 2 from the first heat-insulation light-guiding layer 1, so that the intensity of the light rays entering the quantum dot layer 3 is increased, and the brightness is improved. And under the same condition, if the quantity and the size of the bubbles of the second heat insulation light guide layer 2 are all larger than those of the first heat insulation light guide layer 1, light can be reflected by the process that the first heat insulation light guide layer 1 enters the second heat insulation light guide layer 2, more light is reflected, and therefore the light intensity entering the quantum dot layer 3 is reduced, the utilization of the quantum dot to the light is influenced, and the brightness is reduced.
In some preferred embodiments, the quantum dot layer 3 includes a quantum dot material and a polymeric substrate, and optionally a light diffuser.
The polymer substrate in the quantum dot layer 3 may be the same as or different from the polymer material of the first insulating and light guiding layer 1 and the second insulating and light guiding layer 2. Illustratively, the polymer matrix in the quantum dot layer 3 may include, but is not limited to, PP, PE, PS, PMMA, PET, MS, PC, and the like.
Preferably, the quantum dot layer 3 includes a quantum dot material and a polymer base material, and a light diffusing agent. The light diffusing agent can further homogenize and diffuse incident light rays, so that more light rays can excite quantum dots.
The quantum dot material and the polymer substrate, and the amount and the type of the light diffusing agent can be selected by those skilled in the art according to actual needs. The invention is not limited in this regard.
In some preferred embodiments, as shown in fig. 1, the surface of the quantum dot layer 3 has a microstructure in a direction away from the second insulating and light guiding layer 2.
"microstructure" refers to a pattern of structures having dimensions on the order of micrometers. Which has a light-condensing effect on light.
The invention has wide choice of specific shapes of the microstructure pattern, such as plate shape (such as prism), arc shape (such as sphere or ellipsoid), and combination thereof, as long as the microstructure pattern can facilitate light gathering and brightness improvement.
In some preferred embodiments, the microstructures are prismatic structures. This preferred scheme more does benefit to and carries out spotlight through the light of diffusion homogenization in first thermal-insulated leaded light layer 1, the thermal-insulated leaded light layer 2 of second and the quantum dot layer 3, improves light utilization ratio.
In some preferred embodiments, the microstructures have a maximum height in the range of 2 to 120 μm. In this preferred embodiment, multiple reflections or refractions of light rays are more facilitated for brightness enhancement.
More preferably, the maximum height of the microstructures is in the range of 2 to 100. mu.m, even more preferably 20 to 30 μm.
It should be understood that when the microstructures are prismatic structures, the heights of the respective positions thereof are the same or different.
In some preferred embodiments, the microstructures have an apex at an angle of 45 ° to 135 °. Under this preferred scheme, more do benefit to the multistage reuse to the light after adjacent interface refraction in the microstructure to more do benefit to and promote luminance.
The angle of the vertex refers to the maximum angle of the vertex. It should be understood that the apex may be formed by at least two flat surfaces, at least one curved surface, or a combination of flat surfaces and curved surfaces, the apex being at an angle that is the largest angle between any two surfaces that form the same apex. Illustratively, when the apex is formed by a curved surface, the angle at which the apex is located is the cone angle.
More preferably, the apex is at an angle of 75 ° to 120 °.
In some preferred embodiments, the thickness of the high temperature resistant quantum dot optical plate is 0.5 to 4 mm.
In some preferred embodiments, the thicknesses of the first and second heat-insulating and light-guiding layers 1 and 2 are 0.1 to 1.5mm, and the thickness of the quantum dot layer 3 is 0.1 to 1.5 mm. The thickness range is beneficial to obtaining the quantum dot optical plate which has both excellent heat resistance and optical performance.
In a second aspect, as shown in fig. 2, the present invention provides a method for preparing a high temperature resistant quantum dot optical plate, including the following steps:
selecting a first heat-insulating light-guiding material, a second heat-insulating light-guiding material and a quantum dot material as required;
carrying out first melt extrusion on a first heat-insulation light-guide material and a first foaming agent to obtain a first mixture;
performing second melt extrusion on a second heat-insulation light-guide material and a second foaming agent to obtain a second mixture;
carrying out third melt extrusion on the quantum dot material, the high-molecular base material and the optional light diffusant to obtain a third mixture;
and (3) laminating and molding the first mixture, the second mixture and the third mixture.
The specific types of the first heat-insulating light-guiding material, the second heat-insulating light-guiding material and the quantum dot material can be selected by combining heat resistance, light-guiding performance and light-emitting requirements.
It should be understood that, in some embodiments, the first insulating and light guiding material includes silicone and a polymer material, and the second insulating and light guiding material includes a polymer material.
The types and the amounts of the first foaming agent and the second foaming agent in the invention are only required to be able to prepare the required first heat-insulating light-guiding layer 1 and the second heat-insulating light-guiding layer 2, and can be selected by those skilled in the art according to requirements.
For example, the first blowing agent and the second blowing agent may be each independently selected from at least one of a salt-based blowing agent, an alkane-based blowing agent, a nitroso-based blowing agent, an azo-based blowing agent, an amide-based blowing agent, a hydrazide-based blowing agent, a phenylsulfone-based blowing agent, an semicarbazide-based blowing agent, a triazine-based blowing agent, and a tetrazole-based blowing agent.
Wherein the semicarbazide-based blowing agent may include a substituted or unsubstituted benzenesulfonylaminourea. The hydrazide-type foaming agent may include substituted or unsubstituted benzenesulfonyl hydrazide. The term "substituted or unsubstituted" means that there is or is no substituent on the benzene ring of the corresponding type of blowing agent.
In some preferred embodiments of the present invention, the first blowing agent and the second blowing agent are each independently selected from at least one of sodium bicarbonate, N-heptane, cyclopentane, naphtha, 2 '-azobisisobutyronitrile, diisopropyl azodicarboxylate, azoaminobenzene, N-dinitrosopentamethylenetetramine, N-dimethylphthalamide, benzenesulfonylhydrazide, p-toluenesulfonylhydrazide, 4' -oxybis-benzenesulfonylhydrazide, 3 '-disulfonylhydrazide diphenylsulfone, 1, 3-disulfonylhydrazide benzene, p-toluenesulfonylsemicarbazide, 4' -oxybis-benzenesulfonylurea, trihydrazinyltriazine, and 5-phenyltetrazole.
The conditions for melt extrusion can be properly selected by those skilled in the art according to the molten raw materials and products, as long as the specific structure of each layer of the high-temperature resistant quantum dot optical plate can be obtained.
In some preferred embodiments, the temperature of the first melt extrusion, the second melt extrusion, and the third melt extrusion is each independently 150-.
In some preferred embodiments, the temperature of the coating is 150-250 ℃.
The skilled person can select the melt extrusion, lamination and molding equipment according to the actual requirement, and the invention is not limited to this. For example, the melt extrusion may be performed by using an extruder, the coating may be performed by using a die, and the molding may be performed by using a roller press.
In some preferred embodiments, the method further comprises: and pressing a microstructure on the surface of the quantum dot layer 3 in the plate obtained after the forming.
In a third aspect, the present invention provides an ultrathin backlight module, which includes a light source 4 and the high temperature resistant quantum dot optical plate of the first aspect, wherein the light source 4 is disposed close to or in contact with the first heat insulation light guide layer 1.
The invention adopts the high temperature resistant quantum dot optical plate, so that the high temperature resistant quantum dot optical plate can be directly contacted with the light source 4, and the ultra-thin backlight module can be used. In some preferred embodiments, the thickness of the ultra-thin backlight module is 2-30 mm.
The skilled person can select different light sources 4 according to the actual requirements.
As shown in fig. 3, a person skilled in the art may choose to dispose a liquid crystal panel 5 on a side of the high temperature resistant quantum dot optical plate a away from the light source 4, or dispose other existing components according to actual needs.
The present invention will be described in detail with reference to specific examples.
Example 1
A high temperature resistant quantum dot optical plate, as shown in figure 1, comprises a first heat insulation light guide layer 1, a second heat insulation light guide layer 2 and a quantum dot layer 3 which are arranged in sequence. The first heat insulation light guide layer 1 is arranged below the second heat insulation light guide layer 2, and the second heat insulation light guide layer 2 is arranged below the quantum dot layer 3.
The specific preparation method of the high-temperature-resistant quantum dot optical plate comprises the following steps:
(1) mixing n-heptane in PC and polymethyl silicone resin, and performing melt extrusion at a high temperature of 250 ℃ by using an extruder to obtain a first mixture;
(2) mixing naphtha into PS, and performing melt extrusion in an extruder at the high temperature of 200 ℃ to obtain a second mixture;
(3) mixing a quantum dot material and a styrene type diffusant into the PS, and performing melt extrusion at a high temperature of 200 ℃ through an extruder to obtain a third mixture;
(4) and (3) combining the first mixture, the second mixture and the third mixture obtained in the three extruders at 200 ℃ in a mold, and pressing a microstructure on the surface of the quantum dot layer 3 through a roller to form the high-temperature-resistant quantum dot optical plate with a multilayer structure.
Wherein, the refractive index of the first heat insulation light guide layer 1 is 1.45, the thickness is 500 μm, the foaming ratio is 3, and the average diameter of bubbles is 10 μm; the light transmittance was 80% and the haze was 85%.
The refractive index of the second heat insulation light guide layer 2 is 1.52, the thickness is 500 micrometers, the foaming ratio is 3, and the average diameter of bubbles is 20 micrometers; the light transmittance was 85% and the haze was 90%.
The quantum dot layer 3 had a refractive index of 1.52 and a thickness of 500 μm. Wherein the microstructure on the surface of the quantum dot layer is a prism structure (the height of each position is the same), the angle of the vertex is 45 degrees, and the height is 100 μm.
The quantum dot optical plate manufactured in this embodiment is placed in a display device (directly below) with the same blue light optical power, and the distance between the quantum dot optical plate and the light source 4 is 0, so as to form an ultrathin backlight module with a thickness of 5 mm. The brightness values of the quantum dot optical plates were measured by a color analyzer at the respective centers of the quantum dot optical plates. And testing the brightness value of the original model optical plate for comparison.
The original model optical plate comprises a PET light diffusion layer and a PS quantum dot layer which are sequentially arranged and are directly stacked, wherein the refractive index of the light diffusion layer is 1.59, and the refractive index of the quantum dot layer is 1.52.
The temperature difference between the near lamp and the far lamp of the quantum dot optical plate is 8.42%, the haze of the quantum dot optical plate is 99%, and the brightness of the quantum dot optical plate is reduced by 14.20% compared with the original model.
Example 2
The procedure of example 1 was followed except that the average diameter of the bubbles in the second heat-insulating light-guiding layer 2 was 10 μm.
The temperature difference between the near lamp and the far lamp of the quantum dot optical plate is 8.11%, the haze of the quantum dot optical plate is 99%, and the brightness of the quantum dot optical plate is reduced by 10.19% compared with the original model.
Example 3
The procedure of example 1 was followed except that the average diameter of the bubbles in the second heat-insulating light-guiding layer 2 was 5 μm.
The temperature difference between the near lamp and the far lamp of the quantum dot optical plate is 8.00 percent, the haze of the quantum dot optical plate is 99 percent, and the brightness of the quantum dot optical plate is reduced by 7.56 percent compared with the original model.
Example 4
The procedure of example 1 was followed except that the average diameter of the bubbles in the first heat-insulating light-guiding layer 1 was 5 μm, and the average diameter of the bubbles in the second heat-insulating light-guiding layer 2 was 5 μm.
The temperature difference between the near lamp and the far lamp of the quantum dot optical plate is 7.88 percent, the haze of the quantum dot optical plate is 99 percent, and the brightness of the quantum dot optical plate is reduced by 4.25 percent compared with the original model.
Example 5
The procedure of example 4 was followed except that the average diameter of the bubbles in the first heat-insulating and light-guiding layer 1 was 0.1 μm, and the average diameter of the bubbles in the second heat-insulating and light-guiding layer 2 was 0.1 μm.
The temperature difference between the near lamp and the far lamp of the quantum dot optical plate is 6.15%, the haze of the quantum dot optical plate is 95%, and the brightness of the quantum dot optical plate is reduced by 1.75% compared with the original model.
Example 6
The procedure of example 4 was followed except that the expansion ratio of the first heat-insulating light-guiding layer 1 was 2 and the expansion ratio of the second heat-insulating light-guiding layer 2 was 2.
The temperature difference between the near lamp and the far lamp of the quantum dot optical plate is 7.56%, the haze of the quantum dot optical plate is 99%, and the brightness of the quantum dot optical plate is reduced by 0.59% compared with the original model.
Example 7
The procedure of example 4 was followed, except that the expansion ratio of the first heat-insulating light-guiding layer 1 was 0.5, and the expansion ratio of the second heat-insulating light-guiding layer 2 was 0.5.
The temperature difference between the near lamp and the far lamp of the quantum dot optical plate is 3.11%, the haze of the quantum dot optical plate is 87%, and the brightness of the quantum dot optical plate is increased by 2.34% compared with the original model.
Example 8
The procedure of example 7 was followed except that the expansion ratio of first heat-insulating light-guiding layer 1 was 2.
The temperature difference between the near lamp and the far lamp of the quantum dot optical plate is 7.56%, the haze of the quantum dot optical plate is 92%, and the brightness of the quantum dot optical plate is increased by 1.18% compared with the original model.
Example 9
The procedure is as in example 6, except that the vertices of the prismatic structures are at angles of 90 °.
The temperature difference between the near lamp temperature and the far lamp temperature of the quantum dot optical plate is 7.59%, the haze of the quantum dot optical plate is 99%, and the brightness of the quantum dot optical plate is increased by 4.17% compared with the original model.
Example 10
The procedure is as in example 9, except that the height of the prismatic structure is 25 μm.
The temperature difference between the near lamp and the far lamp of the quantum dot optical plate is 7.55%, the haze of the quantum dot optical plate is 99%, and the brightness of the quantum dot optical plate is increased by 8.46% compared with the original model.
Example 11
The procedure is as in example 9, except that the height of the prismatic structure is 2 μm.
The temperature difference between the near lamp temperature and the far lamp temperature of the quantum dot optical plate is 7.58%, the haze of the quantum dot optical plate is 99%, and the brightness of the quantum dot optical plate is increased by 2.55% compared with the original model.
Example 12
The procedure is as in example 10 except that the apexes of the prismatic structures are at an angle of 135.
The temperature difference between the near lamp and the far lamp of the quantum dot optical plate is 8.42%, the haze of the quantum dot optical plate is 99%, and the brightness of the quantum dot optical plate is increased by 1.15% compared with the original model.
Comparative example 1
The procedure of example 1 was followed, except that the first heat-insulating light-guiding layer 1 and the second heat-insulating light-guiding layer 2 were not provided with a foam structure, and the surface of the quantum dot layer 3 was not provided with a microstructure, which was otherwise the same as example 1.
The temperature difference between the near lamp and the far lamp of the quantum dot optical plate is 1.91%, the haze of the quantum dot optical plate is 79%, and the brightness of the quantum dot optical plate is reduced by 5.31% compared with the original model.
Comparative example 2
The procedure of comparative example 1 was followed except that the refractive index was different between the layers, specifically, the refractive index of the first heat-insulating light-guiding layer 1 was 1.54, the refractive index of the second heat-insulating light-guiding layer 2 was 1.49, and the refractive index of the quantum dot layer 3 was 1.52.
The temperature difference between the near lamp temperature and the far lamp temperature of the quantum dot optical plate is 1.99%, the haze of the quantum dot optical plate is 72%, and the brightness of the quantum dot optical plate is reduced by 10.53% compared with the original model.
According to the embodiment and the comparative example, the quantum dot optical plate with the specific structure has the advantages that the temperature difference between the near lamp and the far lamp is obviously increased when the quantum dot optical plate is applied, and the heat insulation and temperature resistance are good; the haze is large, and the light utilization rate is high; and has a higher brightness. Although the brightness of some embodiments is reduced, the brightness requirement can be basically met under the condition of meeting the temperature resistance.
Furthermore, as can be seen from comparison between examples 1 and 2-4 and between examples 4 and 5, the scheme of optimizing the average diameter of the bubbles is more favorable for the comprehensive effects of temperature resistance and brightness. If the average diameter of the bubbles is too large, the luminance is relatively much lowered. As can be seen from comparison between example 1 and example 3, the preferred embodiment in which the average diameter of the bubbles in the second heat-insulating light-guiding layer 2 is not greater than the average diameter of the bubbles in the first heat-insulating light-guiding layer 1 enhances brightness, and the temperature difference does not change much.
Furthermore, as can be seen from comparison between example 4 and examples 6-8, the scheme of the preferred foaming ratio is more favorable for the comprehensive effects of temperature resistance and brightness. If the foaming ratio is too small, the temperature difference is relatively small, and the temperature resistance is relatively reduced.
Further, as can be seen from comparison between examples 6 and 9 and between examples 10 and 12, the brightness is relatively increased while the temperature resistance is better by adopting the scheme that the prism structure prefers the vertex angle. If the vertex angle is too large, the temperature difference increases slightly, but the brightness decreases.
Further, as can be seen from the comparison between example 9 and examples 10 to 11, the brightness is enhanced while the temperature resistance is excellent by adopting the scheme of selecting the height of the prism structure.
The preferred embodiments of the present invention have been described above in detail, but the present invention is not limited thereto. Within the scope of the technical idea of the invention, many simple modifications can be made to the technical solution of the invention, including combinations of various technical features in any other suitable way, and these simple modifications and combinations should also be regarded as the disclosure of the invention, and all fall within the scope of the invention.
Claims (13)
1. A high-temperature-resistant quantum dot optical plate is characterized by comprising a first heat-insulating light-guiding layer, a second heat-insulating light-guiding layer and a quantum dot layer which are sequentially arranged, wherein the first heat-insulating light-guiding layer and the second heat-insulating light-guiding layer are both provided with a foaming structure, and the heat conductivity coefficient is not more than 0.2W/(m.K); and the refractive indexes of the first heat insulation light guide layer and the second heat insulation light guide layer are sequentially increased, and the refractive index of the quantum dot layer is not less than that of the second heat insulation light guide layer.
2. The high temperature resistant quantum dot optical plate of claim 1, wherein the first thermally insulating and light guiding layer satisfies: the light transmittance is not less than 60 percent, and the haze is not less than 80 percent; the second heat insulation light guide layer meets the following requirements: the light transmittance is not less than 60 percent, and the haze is not less than 90 percent.
3. The high-temperature-resistant quantum dot optical plate according to claim 1, wherein the first heat-insulating and light-guiding layer is a composite foamed layer containing a polymer material and silicone, and the second heat-insulating and light-guiding layer is a foamed layer of a polymer material;
preferably, the silicone is a silicone resin, and the polymer material includes at least one of PP, PE, PS, PMMA, PET, MS, and PC.
4. The high temperature resistant quantum dot optical plate of claim 1, wherein the foamed structures in the first and second thermally insulating and light guiding layers each independently satisfy: the foaming multiplying power is 0.3-4, and the average diameter of the bubbles is 0.1-20 μm; preferably, the first heat insulation light guide layer and the second heat insulation light guide layer independently satisfy: the foaming ratio is 0.5-2, and the average diameter of the bubbles is 0.1-5 μm.
5. The high temperature resistant quantum dot optical plate of claim 1, wherein the foaming ratio of the second insulating light guiding layer foaming structure is not greater than the first insulating light guiding layer, and the average diameter of the bubbles is not greater than the first insulating light guiding layer.
6. The high temperature resistant quantum dot optical plate of claim 1, wherein in the direction away from the second insulating and light guiding layer, the quantum dot layer surface has a microstructure, the microstructure is plate-shaped, arc-shaped or a combination of the two;
preferably, the microstructures are prismatic structures.
7. The high temperature resistant quantum dot optical plate of claim 6, wherein the microstructures have a maximum height of 2-120 μm; the microstructure has a vertex at an angle of 45-135 °;
preferably, the maximum height of the microstructures is between 20 and 30 μm; the microstructure has a vertex at an angle of 75-120 °.
8. The high temperature resistant quantum dot optical plate of claim 1, wherein the quantum dot layer comprises a quantum dot material and a polymeric substrate, and optionally a light diffuser.
9. The high temperature resistant quantum dot optical plate of any one of claims 1-8,
the thickness of the high-temperature resistant quantum dot optical plate is 0.5-4 mm;
and/or the thicknesses of the first heat-insulation light guide layer and the second heat-insulation light guide layer are respectively and independently 0.1-1.5mm, and the thickness of the quantum dot layer is 0.1-1.5 mm.
10. The method for preparing a high temperature resistant quantum dot optical plate according to any of claims 1 to 9, comprising the steps of:
selecting a first heat-insulating light-guiding material, a second heat-insulating light-guiding material and a quantum dot material as required;
carrying out first melt extrusion on a first heat-insulation light-guide material and a first foaming agent to obtain a first mixture;
performing second melt extrusion on a second heat-insulation light-guide material and a second foaming agent to obtain a second mixture;
carrying out third melt extrusion on the quantum dot material, the high-molecular base material and the optional light diffusant to obtain a third mixture;
and (3) laminating and molding the first mixture, the second mixture and the third mixture.
11. The method of manufacturing according to claim 10, further comprising: and pressing a microstructure on the surface of the quantum dot layer in the plate obtained after the forming.
12. An ultra-thin backlight module comprising a light source and the high temperature resistant quantum dot optical plate of any one of claims 1-9, wherein the light source is disposed near or in contact with the first insulating and light guiding layer.
13. The ultra-thin backlight module as recited in claim 12, wherein the ultra-thin backlight module has a thickness of 4-30 mm.
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