CN114394754B - Glass powder with wide application window and high-performance conductive silver paste - Google Patents
Glass powder with wide application window and high-performance conductive silver paste Download PDFInfo
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- CN114394754B CN114394754B CN202111683461.XA CN202111683461A CN114394754B CN 114394754 B CN114394754 B CN 114394754B CN 202111683461 A CN202111683461 A CN 202111683461A CN 114394754 B CN114394754 B CN 114394754B
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- 239000011521 glass Substances 0.000 title claims abstract description 140
- 239000000843 powder Substances 0.000 title claims abstract description 132
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 67
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 37
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000002360 preparation method Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000011347 resin Substances 0.000 claims description 47
- 229920005989 resin Polymers 0.000 claims description 47
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 31
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 31
- 239000011230 binding agent Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- -1 benzyl alcohol, dodecanol ester Chemical class 0.000 claims description 20
- LQZZUXJYWNFBMV-UHFFFAOYSA-N ethyl butylhexanol Natural products CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 claims description 20
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 19
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 19
- RDOFJDLLWVCMRU-UHFFFAOYSA-N Diisobutyl adipate Chemical compound CC(C)COC(=O)CCCCC(=O)OCC(C)C RDOFJDLLWVCMRU-UHFFFAOYSA-N 0.000 claims description 17
- 229940031769 diisobutyl adipate Drugs 0.000 claims description 17
- 239000003960 organic solvent Substances 0.000 claims description 17
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 13
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims description 13
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 13
- 238000003723 Smelting Methods 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 7
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 6
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 4
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 claims description 4
- 239000012752 auxiliary agent Substances 0.000 claims description 3
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001947 lithium oxide Inorganic materials 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004925 Acrylic resin Substances 0.000 claims description 2
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000292 calcium oxide Substances 0.000 claims description 2
- 239000001913 cellulose Substances 0.000 claims description 2
- 229920002678 cellulose Polymers 0.000 claims description 2
- 229920002301 cellulose acetate Polymers 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 2
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims description 2
- 239000002270 dispersing agent Substances 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 229910000464 lead oxide Inorganic materials 0.000 claims description 2
- 239000000314 lubricant Substances 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 2
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 claims description 2
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 claims description 2
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 claims description 2
- 229910001950 potassium oxide Inorganic materials 0.000 claims description 2
- 229910003447 praseodymium oxide Inorganic materials 0.000 claims description 2
- 229910001952 rubidium oxide Inorganic materials 0.000 claims description 2
- CWBWCLMMHLCMAM-UHFFFAOYSA-M rubidium(1+);hydroxide Chemical compound [OH-].[Rb+].[Rb+] CWBWCLMMHLCMAM-UHFFFAOYSA-M 0.000 claims description 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims description 2
- 229910001948 sodium oxide Inorganic materials 0.000 claims description 2
- 239000004094 surface-active agent Substances 0.000 claims description 2
- 239000013008 thixotropic agent Substances 0.000 claims description 2
- 229910003454 ytterbium oxide Inorganic materials 0.000 claims description 2
- 229940075624 ytterbium oxide Drugs 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims 2
- 238000010791 quenching Methods 0.000 claims 2
- 230000000171 quenching effect Effects 0.000 claims 2
- PAAZPARNPHGIKF-UHFFFAOYSA-N 1,2-dibromoethane Chemical compound BrCCBr PAAZPARNPHGIKF-UHFFFAOYSA-N 0.000 claims 1
- 239000005357 flat glass Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000007639 printing Methods 0.000 abstract description 31
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 26
- 239000000853 adhesive Substances 0.000 abstract description 16
- 230000001070 adhesive effect Effects 0.000 abstract description 16
- 238000006243 chemical reaction Methods 0.000 abstract description 16
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 abstract 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 abstract 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 abstract 2
- 229910052709 silver Inorganic materials 0.000 description 12
- 239000004332 silver Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000002002 slurry Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 238000003466 welding Methods 0.000 description 8
- 238000005476 soldering Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000005355 lead glass Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- QVZZPLDJERFENQ-NKTUOASPSA-N bassianolide Chemical compound CC(C)C[C@@H]1N(C)C(=O)[C@@H](C(C)C)OC(=O)[C@H](CC(C)C)N(C)C(=O)[C@@H](C(C)C)OC(=O)[C@H](CC(C)C)N(C)C(=O)[C@@H](C(C)C)OC(=O)[C@H](CC(C)C)N(C)C(=O)[C@@H](C(C)C)OC1=O QVZZPLDJERFENQ-NKTUOASPSA-N 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000000498 ball milling Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- QYMFNZIUDRQRSA-UHFFFAOYSA-N dimethyl butanedioate;dimethyl hexanedioate;dimethyl pentanedioate Chemical compound COC(=O)CCC(=O)OC.COC(=O)CCCC(=O)OC.COC(=O)CCCCC(=O)OC QYMFNZIUDRQRSA-UHFFFAOYSA-N 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C12/00—Powdered glass; Bead compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses glass powder with a wide application window, and belongs to the field of materials. The glass powder is a lead-free system product, and has good environmental protection; meanwhile, the product is matched with high tellurium glass powder and high bismuth glass powder, and the performance of the product can be compared with that of commercial high lead system products; the product has wide application window, is applicable to ultra-high-speed printing after being applied to preparing PERC crystalline silicon battery conductive silver paste, and can be suitable for single printing and step printing. The invention also discloses high-performance conductive silver paste comprising the glass powder and a preparation method thereof, wherein the high-performance conductive silver paste is matched with the glass powder by a specific and preferred organic adhesive, has good dispersibility, stable property and good printing performance, and has high photoelectric conversion efficiency when being applied to PERC crystalline silicon batteries.
Description
Technical Field
The invention belongs to the field of materials, and particularly relates to glass powder with a wide application window and high-performance conductive silver paste.
Background
PERC (Passivated Emitterand Rear Cell) cells, collectively referred to as "emitter and back passivation cells," are naturally derived from conventional aluminum Back Surface Field (BSF) cell structures. The PERC cell is most different from the conventional cell in passivation of the dielectric film on the back surface, and adopts local metal contact, so that the recombination speed of the surface is greatly reduced, and the light reflection on the back surface is improved. In recent years, the photovoltaic community has agreed that the efficiency-improving space of the PERC battery is limited, because the theoretical ultimate efficiency of the PERC battery is 24.5%, and the mass production efficiency of more battery plate manufacturers can reach 23% or higher at present, and part of battery manufacturers claim that the mass production efficiency of the PERC is 23.5% and still improve. The PERC battery has high cost performance and continuously improved mass production efficiency, and has large-size wave tide raised in recent 2 years, so that the PERC battery has one wave of expanded production tide, the large-size new PERC capacity before 2021 years exceeds 200GW, and the PERC battery is a mainstream battery technology in the next 2-3 years or even 5 years.
The front side metallization of the PERC cell is typically performed by screen printing positive silver grids, and the front side silver electrodes are formed by a sintering process. The front silver paste is a main material for manufacturing the front battery and mainly comprises glass powder, silver powder and an organic adhesive. The glass powder has great influence on electrical performance, and the front silver paste of the main stream adopts high-lead glass powder, because the high-lead glass powder has better silver melting capability, wider performance window and easy adjustment of softening point, but lead glass has larger environmental pollution, so that the use of lead-free glass powder or low-lead glass powder instead of high-lead glass powder in recent years is always a research hot spot of paste manufacturers, and the application window of some existing lead-free or low-lead system products is smaller, thereby easily causing the confusion of paste of a production line, and simultaneously, the photoelectric conversion efficiency after application is not high. Along with the increasing printing speed in screen printing, the line width of the screen printing plate is narrower and narrower, the requirement on the organic adhesive is continuously improved, the traditional organic system can not meet the printing requirement of the existing production line, the problems of gate breakage, virtual printing and the like of slurry are easy to occur, and a brand new organic system needs to be developed to adapt to the printing requirement of the continuous improvement of the production line.
Disclosure of Invention
Based on the defects of the prior art, the invention aims to provide the glass powder with a wide application window, which is a lead-free system product, has good environmental protection performance and can be compared with a shoulder high-lead system product; the product has wide application window, is applicable to ultra-high-speed printing after being applied to preparing PERC crystalline silicon battery conductive silver paste, and can be suitable for single printing and step printing.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the glass powder with wide application window comprises high tellurium glass powder and high bismuth glass powder;
the high tellurium glass powder comprises the following components in parts by weight: 0 to 90 parts of tellurium oxide, 0 to 90 parts of bismuth oxide, 0 to 10 parts of molybdenum oxide, 5 to 20 parts of tungsten oxide, 5 to 15 parts of silicon dioxide, 0.2 to 10 parts of alkaline earth metal oxide, 2.5 to 35 parts of alkali metal oxide and 0 to 3 parts of rare earth metal oxide;
the high bismuth glass powder comprises the following components in parts by weight: bismuth oxide 0-90 parts, tellurium oxide 0-50 parts, tungsten oxide 0-50 parts, silicon dioxide 0-15 parts, alkaline earth metal oxide 0-5 parts, alkali metal oxide 0-10 parts and rare earth metal oxide 0-3 parts;
the alkali metal oxide is at least one of lithium oxide, potassium oxide and sodium oxide; the alkaline earth metal oxide is at least one of magnesium oxide, calcium oxide and barium oxide; the rare earth metal oxide is at least one of praseodymium oxide, erbium oxide, yttrium oxide, cerium oxide, rubidium oxide and ytterbium oxide.
The weight ratio of the high tellurium glass powder to the high bismuth glass powder is (6:4) - (9:1).
The glass powder with wide application window belongs to a lead-free glass powder system, the components of the glass powder contain high tellurium glass powder and high bismuth glass powder, and the inventor tests that the paste prepared from the high tellurium glass powder has better photoelectric conversion efficiency compared with the existing commercial lead-containing glass powder product after printing, but the welding tension of the glass powder is lower when the glass powder is further applied to a crystalline silicon battery; on the other hand, the high bismuth glass powder has higher welding tension when being applied, but has lower relative photoelectric conversion efficiency after being applied. When the two components are matched according to the proportion, the advantages of the two components are effectively combined, and compared with the existing commercial lead-containing glass powder, the obtained product has good welding tension and photoelectric conversion efficiency in application.
Preferably, the weight ratio of the high tellurium glass frit to the high bismuth glass frit is 8:2.
The inventor prefers that when the two glass powders are matched in a weight ratio of 8:2, the obtained product has the best comprehensive performance, and the welding tension or the photoelectric conversion efficiency after application is better than that of commercial lead-containing glass powder.
Preferably, the high tellurium glass powder comprises 39-48 parts by weight of tellurium oxide and 17-26 parts by weight of bismuth oxide;
more preferably, the high tellurium glass powder comprises 45 parts by weight of tellurium oxide and 20 parts by weight of bismuth oxide;
through experiments of the inventor, the content ratio of tellurium oxide to bismuth oxide in the high tellurium glass powder has great influence on the electrical performance of the product in application: the relative improvement of the bismuth oxide content in the product components is that the photoelectric conversion efficiency is gradually increased to a higher value during application and then begins to decrease; the relative increase of the tellurium oxide content in the components of the product can reduce the series resistance when the tellurium oxide content is applied to the crystalline silicon battery, but when the added parts are increased to more than 45 parts, the corrosion performance of the slurry prepared by the product is increased, so that the open voltage when the tellurium oxide content is applied to the crystalline silicon battery is reduced. In combination, the performance of the product is best when the weight part of tellurium oxide is 45 parts and the weight part of bismuth oxide is 20 parts.
More preferably, the high tellurium glass powder comprises the following components in parts by weight: 45 parts of tellurium oxide, 20 parts of bismuth oxide, 5 parts of molybdenum oxide, 12 parts of tungsten oxide, 6 parts of silicon dioxide, 2 parts of alkaline earth metal oxide, 4 parts of alkali metal oxide and 1 part of rare earth metal oxide.
The glass powder product prepared by the proportion has better electrical property when being prepared into the front slurry of the crystalline silicon battery.
Preferably, the preparation method of the high tellurium glass powder comprises the following steps:
(1) The components are evenly mixed and stirred according to the proportion, and then are placed at 950-1100 ℃ for smelting for 95-105 min, quenched and cooled after smelting is completed, and the obtained materials are crushed and ground by a grinder to obtain D 50 45-55 mu m semi-finished glass powder;
(2) Crushing and grinding the semi-finished glass powder by using a jet mill until the obtained powder D 50 1.4-1.6 mu m to obtain the high tellurium glass powder.
The grain size of the high tellurium glass powder has a certain influence on the performance of the product, when the grain size is gradually increased, the welding tension of the obtained product applied to the crystalline silicon battery is gradually increased, but the open pressure is gradually increased at the same time, the series resistance is also increased along with the increase of the open pressure, and D is adopted as the formula 50 The product with the thickness of 1.4-1.6 μm has higher photoelectric conversion efficiency and welding tension.
Preferably, the high bismuth glass powder comprises 29 to 38 parts by weight of bismuth oxide and 17 to 26 parts by weight of tungsten oxide;
more preferably, the high bismuth glass powder comprises 35 parts by weight of bismuth oxide and 20 parts by weight of tungsten oxide;
the high bismuth glass powder has a larger contribution to the improvement of the welding tension after the application of the product, and the welding tension of the product is gradually improved when the product is applied to a crystalline silicon battery along with the improvement of the relative content of bismuth oxide in the component (or the reduction of the relative content of tungsten oxide), but the photoelectric conversion efficiency is in a trend of increasing first and then reducing later, and when the weight ratio of bismuth oxide to tungsten oxide is 35:20, the comprehensive application performance of the obtained product is optimal.
More preferably, the high bismuth glass powder comprises the following components in parts by weight: 35 parts of bismuth oxide, 25 parts of tellurium oxide, 20 parts of tungsten oxide, 8 parts of silicon dioxide, 4 parts of alkaline earth metal oxide, 7 parts of alkali metal oxide and 1 part of rare earth metal oxide;
through the tests of the inventor, the tellurium oxide content in the high bismuth glass powder can also have an influence on the corrosiveness of the product after the product is prepared into slurry, and the product prepared by the above proportion has the best performance.
Preferably, the preparation method of the high bismuth glass powder comprises the following steps:
(1) The components are evenly mixed and stirred according to the proportion, and then are placed at 950-1100 ℃ for smelting for 95-105 min, quenched and cooled after smelting is completed, and the obtained materials are crushed and ground by a grinder to obtain D 50 45-55 mu m semi-finished glass powder;
(2) Crushing and grinding the semi-finished glass powder by using a jet mill until the obtained powder D 50 1.9-2.1 mu m to obtain the high bismuth glass powder.
Similar to the grain size of the high tellurium glass powder, when the high bismuth glass powder is D 50 The comprehensive performance of the prepared product is optimal when the particle size is 1.9-2.1 mu m.
The invention further aims at providing high-performance conductive silver paste which comprises the following components in parts by weight: 75-92 parts of silver powder, 1.5-4 parts of glass powder and 6.5-15 parts of organic adhesive.
The high-performance conductive silver paste further prepared by the glass powder meets the printing requirements of the existing production line, the problems of broken gate, false mark and the like are avoided, and meanwhile, the photoelectric conversion efficiency of the prepared crystalline silicon battery is high.
Preferably, the silver powder is at least one of spherical silver powder and microcrystalline silver powder, and the average particle size is 0.5-3 mu m;
more preferably, the components of the high-performance conductive silver paste also comprise 0 to 3 parts by weight of nano silver powder, wherein the average particle size of the nano silver powder is 200 to 700nm;
more preferably, the high-performance conductive silver paste also comprises 0 to 3 parts by weight of metal oxide, wherein the metal oxide is at least one of nickel oxide, cobalt oxide, bismuth oxide, lead oxide, antimony oxide and molybdenum oxide, and D of the metal oxide 50 0.5 to 1.5 mu m.
Preferably, the components of the organic binder include an organic solvent, a binder resin, and an organic auxiliary agent;
more preferably, the organic solvent includes at least one of DBE (dibasic ester), diisobutyl adipate, butyl carbitol, benzyl alcohol, dodecanol ester, diethylene glycol diethyl ether;
the binding resin comprises at least one of hydroxy cellulose, PVB resin, acrylic resin and cellulose acetate resin;
the organic auxiliary agent comprises at least one of dispersing agent, thixotropic agent, lubricant and surfactant;
more preferably, the components of the organic binder include the following: dodecanol ester, diisobutyl adipate, PVB resin A and PVB resin B; the viscosity (10% ethanol solution) of the PVB resin A is 180-300 mPa/s, and the viscosity (10% ethanol solution) of the PVB resin B is 10-50 mPa/s;
the slurry prepared by the organic adhesive prepared by matching and combining the organic solvents with different boiling points and different viscosities with the adhesive resin has good stability and can realize continuous printing.
More preferably, the weight ratio of the organic solvent to the binder resin is greater than or equal to 86:14.
the inventor has found that the insufficient solvent ratio in the organic binder may cause poor ink return performance of the prepared paste during printing, the probability of poor printing is improved, and when the ratio of the total weight of the two organic solvents to the weight of the binder resin is more than or equal to 86:14, the viscosity of the resulting slurry becomes low, and the fine grid line shape thereof becomes wide after sintering.
More preferably, the weight ratio of the dodecanol ester to the diisobutyl adipate is (5.5 to 6.5): (2.1-3.1).
Under the condition that the total addition amount of the organic solvent is unchanged, when the content of diisobutyl adipate is excessive (or the content of dodecanol ester is lower), the burrs of the obtained conductive silver paste for PERC crystalline silicon batteries are more, the long-term continuous printing is not facilitated, meanwhile, the paste seepage can be possibly caused, and when the content of the conductive silver paste is lower (or the content of dodecanol ester is higher), the fine grid fullness is reduced during the paste printing, the phenomenon of uneven thickness occurs, and finally the risk of false printing can be possibly caused; the weight ratio of dodecanol ester to diisobutyl adipate is in the above range, and the stability and printing performance of the product are optimal.
Preferably, the weight ratio of PVB resin A to PVB resin B is less than or equal to (7.5 to 8.5): (5.5-6.5).
The different contents of PVB resin with two different viscosities in the components of the organic adhesive can affect the viscosity stability of the obtained silver paste, and the viscosity stability of the obtained product is optimal and is not easy to dry.
More preferably, the organic binder comprises the following components in parts by weight: 60 parts of dodecanol ester, 26 parts of diisobutyl adipate, 8 parts of PVB resin A and 6 parts of PVB resin B.
When the organic adhesive is formed according to the proportion, the silver paste prepared by further application of the organic adhesive has the highest stability and the best printing performance.
Still another object of the present invention is to provide a method for preparing the high-performance conductive silver paste, comprising the steps of: and (3) uniformly mixing the components in proportion, transferring to a ball mill, ball milling for 1-4 hours, and filtering to obtain the high-performance conductive silver paste.
The preparation method of the high-performance conductive silver paste has simple operation steps and can realize industrialized mass production.
The glass powder with a wide application window has the beneficial effects that the glass powder is a lead-free system product and has good environmental protection; meanwhile, the product is matched with high tellurium glass powder and high bismuth glass powder, and the performance of the product can be compared with that of commercial high lead system products; the product has wide application window, is applicable to ultra-high-speed printing after being applied to preparing PERC crystalline silicon battery conductive silver paste, and can be suitable for single printing and step printing. The invention also provides high-performance conductive silver paste comprising the glass powder and a preparation method thereof, wherein the high-performance conductive silver paste is matched with the glass powder by a specific and preferred organic adhesive, has good dispersibility, stable property and good printing performance, and has high photoelectric conversion efficiency when being applied to PERC crystalline silicon batteries.
Detailed Description
Unless otherwise specified, the raw materials used in the examples and comparative examples of the present invention were all purchased from the market, and the preparation apparatuses used were all of the ordinary types purchased from the market. The objects, technical solutions and advantages of the present invention will be further described with reference to specific examples, which are intended to be illustrative of the contents of the present invention in detail, not limiting the present invention.
Example 1
The invention relates to an embodiment of glass powder with a wide application window and high-performance conductive silver paste, which comprises the following components in parts by weight: 80 parts of silver powder, 2 parts of glass powder, 13 parts of organic adhesive, 2.5 parts of nano silver powder and 2.5 parts of metal oxide; the average grain diameter of the silver powder is 2 mu m, the average grain diameter of the nanometer silver powder is 500nm, the metal oxide is nickel oxide, and D 50 1 μm;
the glass powder comprises high tellurium glass powder and high bismuth glass powder;
the high tellurium glass powder comprises the following components in parts by weight: 45 parts of tellurium oxide, 20 parts of bismuth oxide, 5 parts of molybdenum oxide, 12 parts of tungsten oxide, 6 parts of silicon dioxide, 2 parts of alkaline earth metal oxide, 4 parts of alkali metal oxide and 1 part of rare earth metal oxide;
the high bismuth glass powder comprises the following components in parts by weight: 35 parts of bismuth oxide, 25 parts of tellurium oxide, 20 parts of tungsten oxide, 8 parts of silicon dioxide, 4 parts of alkaline earth metal oxide, 7 parts of alkali metal oxide and 1 part of rare earth metal oxide;
the alkali metal oxide is lithium oxide; the alkaline earth metal oxide is magnesium oxide; the rare earth metal oxide is yttrium oxide;
the weight ratio of the high tellurium glass powder to the high bismuth glass powder is 8:2.
The preparation method of the high tellurium glass powder comprises the following steps:
(1) The components are evenly mixed according to the proportion, and then are placed at 1000 ℃ for smelting for 100min, quenched and cooled after smelting is completed, and the obtained materials are crushed and ground by a grinder to obtain D 50 50 μm of semi-finished glass frit;
(2) Crushing and grinding the semi-finished glass powder by using a jet mill until the obtained powder D 50 And the diameter is 1.5 mu m, thus obtaining the high tellurium glass powder.
The preparation method of the high bismuth glass powder comprises the following steps:
(1) The components are evenly mixed according to the proportion, and then are placed at 1000 ℃ for smelting for 100min, quenched and cooled after smelting is completed, and the obtained materials are crushed and ground by a grinder to obtain D 50 45-55 mu m semi-finished glass powder;
(2) Crushing and grinding the semi-finished glass powder by using a jet mill until the obtained powder D 50 And the thickness is 2 mu m, thus obtaining the high bismuth glass powder.
The organic adhesive comprises the following components in parts by weight: 60 parts of dodecanol ester, 26 parts of diisobutyl adipate, 8 parts of PVB resin A and 6 parts of PVB resin B; the PVB resin A is a product B60H produced by cola, and the PVB resin B is a product B16H produced by cola.
The preparation method of the high-performance conductive silver paste comprises the following steps: and (3) uniformly mixing the components in proportion, transferring to a ball mill, ball milling for 3 hours, and filtering to obtain the high-performance conductive silver paste.
Example 2
The present example differs from example 1 only in that the high-performance conductive silver paste comprises the following components in parts by weight: 75 parts of silver powder, 4 parts of glass powder, 15 parts of organic adhesive, 3 parts of nano silver powder and 3 parts of metal oxide.
Example 3
The present example differs from example 1 only in that the high-performance conductive silver paste comprises the following components in parts by weight: 90 parts of silver powder, 1 part of glass powder, 8 parts of organic adhesive and 1 part of nano silver powder.
Example 4
In order to verify the influence of the content change of tellurium oxide and bismuth oxide in the high tellurium glass powder in the glass powder of the high performance conductive silver paste on the performance of the product, control groups 1 to 4 were set, wherein the glass powder only comprises the high tellurium glass powder, and the addition parts of tellurium oxide and bismuth oxide in the high tellurium glass powder are different (the total parts of the tellurium oxide and the bismuth oxide are 65 parts), and the other parts are the same as those in the embodiment 1, as shown in the table 1.
TABLE 1
| Control group | Tellurium oxide addition part | Bismuth oxide added parts |
| Control group 1 | 39 | 26 |
| Control group 2 | 42 | 23 |
| Control group 3 | 45 | 20 |
| Control group 4 | 48 | 17 |
Each product was applied to printing on crystalline silicon and manufactured to a PERC crystalline silicon battery while testing its soldering tension and electrical properties, and the same process and test were performed using commercial glass frit of type 2024 manufactured by BASS in korea as a comparative group, and the results are shown in table 2.
TABLE 2
As can be seen from table 2, the soldering tension difference after the high tellurium glass frit and the commercial glass frit were applied to prepare silver paste and further to prepare crystalline silicon cell was large, but the photoelectric conversion efficiency of the control group 3 was higher than that of the commercial glass frit when the ratio of tellurium oxide and bismuth oxide was preferable (45 parts by weight of tellurium oxide and 20 parts by weight of bismuth oxide).
Meanwhile, in order to verify the influence of the particle size distribution of the high tellurium glass powder on the performance of the product, a comparison group 3 is used as a preferred group, and comparison groups 5 and 6 are arranged, wherein:
control group 5 differed from control group 3 only in that the high tellurium glass frit powder D 50 1 μm;
control 6 differs from control 3 only in the high tellurium glass frit powder D 50 Is 2 mu m;
the results are shown in Table 2.
As is clear from Table 2, as the particle size distribution of the high tellurium glass powder increases, the soldering tension increases after the crystalline silicon cell is produced, but the series resistance also gradually increasesThe photoelectric conversion efficiency is rather lowered by D of high tellurium glass powder 50 The product performance is best when the particle size is 1.4-1.6 mu m.
Example 5
To verify the effect of the content change of bismuth oxide and tungsten oxide in the high bismuth glass powder in the high performance conductive silver paste of the present invention on the performance of the product, control groups 1 to 4 were set, wherein the glass powder only contained the high bismuth glass powder, and the other components were the same as example 1 except that the addition parts of bismuth oxide and tungsten oxide in the high bismuth glass powder were different (the total parts of both components were still 55 parts), as shown in table 3.
TABLE 3 Table 3
| Control group | Bismuth oxide added parts | Tungsten oxide added parts |
| Control group 1 | 29 | 26 |
| Control group 2 | 32 | 23 |
| Control group 3 | 35 | 20 |
| Control group 4 | 38 | 17 |
Each product was applied to printing on crystalline silicon and manufactured to a PERC crystalline silicon battery while testing its soldering tension and electrical properties, and the same process and test were performed using commercial glass frit of type 2024 manufactured by BASS in korea as a comparative group, and the results are shown in table 4.
TABLE 4 Table 4
As can be seen from table 4, the soldering tension after the high bismuth glass frit was applied to prepare silver paste and further prepare crystalline silicon battery was much higher than that of the conventional commercial glass frit, but the photoelectric conversion efficiency was lower, whereas the photoelectric conversion efficiency was higher for the control group 3 when the ratio of bismuth oxide and tungsten oxide was preferable (35 parts by weight of tellurium oxide and 20 parts by weight of tungsten oxide).
Meanwhile, in order to verify the influence of the particle size distribution of the high bismuth glass powder on the performance of the product, a control group 3 is taken as a preferable group, and control groups 5 and 6 are arranged, wherein:
control group 5 differed from control group 3 only in that the high tellurium glass frit powder D 50 1.5 μm;
control 6 differs from control 3 only in the high tellurium glass frit powder D 50 2.5 μm;
the results are shown in Table 4.
As is clear from Table 4, the particle size distribution of the high-bismuth glass powder showed similar trend to that of the high-tellurium glass powder 50 The product performance is best when the particle size is 1.9-2.1 mu m.
Example 6
To verify the effect of the weight ratio variation of the high tellurium glass frit and the high bismuth glass frit in the glass frit of the present invention on the application performance of the product, control groups 1 to 4 were set, the glass frit only contained the high tellurium glass frit and the high bismuth glass frit, and the same as in example 1 except for the weight ratio of the high tellurium glass frit and the high bismuth glass frit, as shown in table 5.
TABLE 5
Each product was applied to printing on crystalline silicon and manufactured to a PERC crystalline silicon battery while testing its soldering tension and electrical properties, and the same process and test were performed using commercial glass frit of type 2024 manufactured by BASS in korea as a comparative group, and the results are shown in table 6.
TABLE 6
As can be seen from table 6, as the weight ratio of the high tellurium glass frit to the high bismuth glass frit was decreased, the soldering tension of the product applied to the crystalline silicon battery was gradually increased, but the photoelectric conversion efficiency was low, and when the ratio of the two was 8:2, the product of the obtained control group 2 had the best overall performance and was far superior to the commercial glass frit product.
Example 7
To verify the effect of the relative weight ratio changes of the organic solvent and the binder resin in the organic binder of the present invention on the application performance of the product, control groups 1 to 3 were set, and the same as in example 1 (including the weight ratio between the dodecanol ester and diisobutyl adipate, the weight ratio between the PVB resin a and the PVB resin B, and the total weight ratio of the organic binder components were unchanged) except that the weight ratio of the organic solvent and the binder resin in the organic binder of the silver paste was changed, as shown in table 7.
TABLE 7
Each product was applied to printing on crystalline silicon and sintered, and ink return performance of the paste and line width after sintering were examined, and the results are shown in table 8.
TABLE 8
| Sample Properties | Line width of fine grid (mum) | Ink return performance |
| Control group 1 | 25～26 | NG |
| Control group 2 | 28～32 | OK |
| Control group 3 | 34～36 | OK |
As can be seen from table 8, when the relative content of the organic solvent in the organic binder is low, the ink return performance after the application of the product is insufficient, and the risk of defective printing is liable to occur, but when the content thereof is too high, the fine grid line width of the paste after sintering becomes large, and therefore, the ratio by weight of the organic solvent to the binder resin in the organic binder is 86: the effect of the product is optimal at 14.
Example 8
According to the results of example 7, in order to further verify the effect of the weight part ratio of the solvent between the two different boiling points of the dodecanol ester and diisobutyl adipate in the organic solvent of the organic binder according to the present invention on the application performance of the product, control groups 1 to 3 were set, and the same as in example 1 (including the sum of the total weight parts of the dodecanol ester and diisobutyl adipate, the weight part ratio between the PVB resin A and the PVB resin and the total weight parts of the organic binder component were all unchanged) except that the weight parts of the dodecanol ester and the diisobutyl adipate in the organic solvent of the organic binder were changed, as shown in Table 9.
TABLE 9
Each product was applied to printing on crystalline silicon and sintering, and it was examined whether the burr condition of the paste was serious and whether the fine grid after sintering had uneven thickness, and the results are shown in table 10.
Table 10
| Sample Properties | Raw edges | Uneven thickness |
| Control group 1 | Normal state | More than that |
| Control group 2 | Normal state | Normal state |
| Control group 3 | More than that | Normal state |
As can be seen from Table 10, when the proportion of dodecanol ester in the organic solvent is low, the product has insufficient plumpness when the product is printed with fine grid, the phenomenon of uneven thickness is easy to occur, and the phenomenon of virtual printing can occur after long-time printing; however, when the proportion content of the dodecanol ester is higher, the obtained silver paste has the phenomenon of more burrs, so that the inventor comprehensively considers that the weight ratio of the dodecanol ester to the diisobutyl adipate in the organic solvent is (5.5-6.5): (2.1-3.1) the silver paste prepared in the process has the best comprehensive performance.
Example 9
According to the results of example 7, to further verify the effect of the weight parts of the resins between the two different viscosities of the bonding resins PVB resin A and PVB in the organic adhesive of the present invention on the performance of the product, control groups 1-3 were set, except that the weight parts of PVB resin A and PVB in the bonding resin of the organic adhesive were changed as shown in Table 11, except that example 1 (including the sum of the total weight parts of PVB resin A and PVB, the weight parts of the dodecanol ester and diisobutyl adipate, and the total weight parts of the organic adhesive components were all unchanged).
TABLE 11
The viscosity stability test (specific test method is that a Brookfield viscometer CAP2000+, 5# rotor, 40/s, running for 60s, and measuring the product values at a constant temperature of 25 ℃) and the slurry dryness test (specific test method is that whether the slurry is cracked or not after being dried) are carried out on the PERC crystalline silicon cell conductive silver paste prepared by each control group, and the results are shown in Table 12.
Table 12
| Sample Properties | Viscosity stabilizationSex characteristics | Drying of the slurry |
| Control group 1 | OK | Is not easy to dry |
| Control group 2 | NG | Easy to dry |
| Control group 3 | NG | Easy to dry |
As can be seen from Table 12, the weight ratio of PVB resin A to PVB resin B > (7.5 to 8.5): and (5.5-6.5), the viscosity stability of the products obtained in the control groups 2 and 3 is low, the products are easy to dry, the processing difficulty is improved, and the processing performance of the products in the control group 1 is optimal.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the scope of the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solution of the present invention may be modified or substituted equally without departing from the spirit and scope of the technical solution of the present invention.
Claims (9)
1. The glass powder with the wide application window is characterized by comprising high tellurium glass powder and high bismuth glass powder;
the high tellurium glass powder comprises the following components in parts by weight: 39-48 parts of tellurium oxide, 17-26 parts of bismuth oxide, 0-10 parts of molybdenum oxide, 5-20 parts of tungsten oxide, 5-15 parts of silicon dioxide, 0.2-10 parts of alkaline earth metal oxide, 2.5-35 parts of alkali metal oxide and 0-3 parts of rare earth metal oxide;
the high bismuth glass powder comprises the following components in parts by weight: 29-38 parts of bismuth oxide, 0-50 parts of tellurium oxide, 17-26 parts of tungsten oxide, 0-15 parts of silicon dioxide, 0-5 parts of alkaline earth metal oxide, 0-10 parts of alkali metal oxide and 0-3 parts of rare earth metal oxide;
the alkali metal oxide is at least one of lithium oxide, potassium oxide and sodium oxide; the alkaline earth metal oxide is at least one of magnesium oxide, calcium oxide and barium oxide; the rare earth metal oxide is at least one of praseodymium oxide, erbium oxide, yttrium oxide, cerium oxide, rubidium oxide and ytterbium oxide;
the weight ratio of the high tellurium glass powder to the high bismuth glass powder is 8:2.
2. The glass frit with a wide application window according to claim 1, wherein the high tellurium glass frit comprises the following components in parts by weight: 45 parts of tellurium oxide, 20 parts of bismuth oxide, 5 parts of molybdenum oxide, 12 parts of tungsten oxide, 6 parts of silicon dioxide, 2 parts of alkaline earth metal oxide, 4 parts of alkali metal oxide and 1 part of rare earth metal oxide.
3. The glass frit with a wide application window according to claim 1, wherein the high bismuth glass frit comprises the following components in parts by weight: 35 parts of bismuth oxide, 25 parts of tellurium oxide, 20 parts of tungsten oxide, 8 parts of silicon dioxide, 4 parts of alkaline earth metal oxide, 7 parts of alkali metal oxide and 1 part of rare earth metal oxide.
4. The wide application window glass frit according to claim 1,
the preparation method of the high tellurium glass powder comprises the following steps:
(1) The components are evenly mixed and stirred according to the proportion, and then are placed at 950-1100 ℃ for smelting for 95-105 min, quenching and cooling are carried out after smelting is completed, and the obtained materials are crushed and ground by a grinder to obtain D 50 45-55 mu m of semi-finished glass powder;
(2) Crushing and grinding the semi-finished glass powder by using a jet mill until the obtained powder D 50 Is 1.4-1.6 mu m, thus obtaining the Gao DiGlass powder;
the preparation method of the high bismuth glass powder comprises the following steps:
(1) The components are evenly mixed and stirred according to the proportion, and then are placed at 950-1100 ℃ for smelting for 95-105 min, quenching and cooling are carried out after smelting is completed, and the obtained materials are crushed and ground by a grinder to obtain D 50 45-55 mu m of semi-finished glass powder;
(2) Crushing and grinding the semi-finished glass powder by using a jet mill until the obtained powder D 50 And the thickness is 1.9-2.1 mu m, so that the high bismuth glass powder is obtained.
5. The high-performance conductive silver paste is characterized by comprising the following components in parts by weight: 75-92 parts of silver powder, 1.5-4 parts of glass powder according to any one of claims 1-4 and 6.5-15 parts of organic binder.
6. The high-performance conductive silver paste according to claim 5, wherein the silver powder is at least one of spherical silver powder and microcrystalline silver powder, and the average particle size is 0.5-3 μm;
the high-performance conductive silver paste also comprises 0-3 parts by weight of nano silver powder, wherein the average particle size of the nano silver powder is 200-700 nm;
the high-performance conductive silver paste also comprises 0-3 parts by weight of metal oxide, wherein the metal oxide is at least one of nickel oxide, cobalt oxide, bismuth oxide, lead oxide, antimony oxide and molybdenum oxide, and D is 50 0.5 to 1.5 μm.
7. The high performance conductive silver paste of claim 5, wherein the components of the organic binder include an organic solvent, a binder resin, and an organic auxiliary agent;
the organic solvent comprises at least one of DBE, diisobutyl adipate, butyl carbitol, benzyl alcohol, dodecanol ester and diethylene glycol diethyl ether;
the binding resin comprises at least one of hydroxy cellulose, PVB resin, acrylic resin and cellulose acetate resin;
the organic aid comprises at least one of a dispersing agent, a thixotropic agent, a lubricant and a surfactant.
8. The high performance conductive silver paste of claim 6, wherein the composition of the organic binder comprises the following components: dodecanol ester, diisobutyl adipate, PVB resin A and PVB resin B; the viscosity of the PVB resin A is 180-300 mPa/s, and the viscosity of the PVB resin B is 10-50 mPa/s;
the weight ratio of the organic solvent to the binding resin is more than or equal to 86:14;
the weight ratio of the dodecanol ester to the diisobutyl adipate is (5.5-6.5): (2.1-3.1);
the weight ratio of the PVB resin A to the PVB resin B is less than or equal to (7.5-8.5): (5.5 to 6.5).
9. The high-performance conductive silver paste as claimed in claim 8, wherein the organic binder comprises the following components in parts by weight: 60 parts of dodecanol ester, 26 parts of diisobutyl adipate, 8 parts of PVB resin A and 6 parts of PVB resin B.
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| CN106098144A (en) * | 2016-06-17 | 2016-11-09 | 上海匡宇科技股份有限公司 | A kind of glass dust and with its solar cell front side silver paste prepared and preparation method thereof |
| CN110619971A (en) * | 2019-09-09 | 2019-12-27 | 江苏正能电子科技有限公司 | Formula and preparation method of high-tension front silver paste suitable for high-tellurium glass |
| CN111302636A (en) * | 2018-12-11 | 2020-06-19 | 苏州晶银新材料股份有限公司 | Glass powder composition, conductive silver paste containing glass powder composition and solar cell |
| CN111499208A (en) * | 2020-04-23 | 2020-08-07 | 常州聚和新材料股份有限公司 | Glass material for front silver paste of monocrystalline silicon solar cell and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098144A (en) * | 2016-06-17 | 2016-11-09 | 上海匡宇科技股份有限公司 | A kind of glass dust and with its solar cell front side silver paste prepared and preparation method thereof |
| CN111302636A (en) * | 2018-12-11 | 2020-06-19 | 苏州晶银新材料股份有限公司 | Glass powder composition, conductive silver paste containing glass powder composition and solar cell |
| CN110619971A (en) * | 2019-09-09 | 2019-12-27 | 江苏正能电子科技有限公司 | Formula and preparation method of high-tension front silver paste suitable for high-tellurium glass |
| CN111499208A (en) * | 2020-04-23 | 2020-08-07 | 常州聚和新材料股份有限公司 | Glass material for front silver paste of monocrystalline silicon solar cell and preparation method and application thereof |
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