CN114391851A - Fully-implanted brain-computer interface based on system-level integration process and manufacturing method - Google Patents

Fully-implanted brain-computer interface based on system-level integration process and manufacturing method Download PDF

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CN114391851A
CN114391851A CN202111564401.6A CN202111564401A CN114391851A CN 114391851 A CN114391851 A CN 114391851A CN 202111564401 A CN202111564401 A CN 202111564401A CN 114391851 A CN114391851 A CN 114391851A
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computer interface
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洪慧
王浩传
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Hangzhou Dianzi University
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Abstract

The invention discloses a fully-implanted brain-computer interface based on a system-level integration process and a manufacturing method thereof, wherein the existing SoC scheme fully-implanted brain-computer interface system generally has low wireless communication rate, low neural signal sampling rate and low stimulation current; the application of the fully-implanted brain-computer interface system in neuroscience, biomedical treatment and the like is severely restricted; the invention adopts a system-level integration process, carries out miniaturized heterogeneous integration on a special computer interface ASIC chip, a wireless power supply and wireless communication chip and an SMD device, realizes a fully-implanted computer interface system structure with complete functions, and realizes integrated inductance with higher quality factor compared with an SoC integration scheme by depositing a part of wireless power supply receiving coils implanted in a body by adopting a thick metal layer, and the integrated inductance is used as a receiving coil for wireless power supply, thereby improving the wireless power supply receiving efficiency of implanted equipment; finally, a miniaturized high-performance fully-implanted brain-computer interface system is realized, so that the fully-implanted brain-computer interface can be applied to specific neuroscience research.

Description

Fully-implanted brain-computer interface based on system-level integration process and manufacturing method
Technical Field
The invention relates to the field of implantable brain-computer interfaces, in particular to a fully-implantable brain-computer interface based on a system-level integration process and a manufacturing method thereof.
Background
The brain-computer interface is an important means for neuroscience research as a path for connecting a target brain and an external device. Current neural research includes recording and stimulation techniques that span different temporal and spatial scales, such as multiphoton calcium imaging and optogenetics, which have proven to have powerful decoding functional neural connectivity, but the resolution of existing recording and stimulation techniques is lower compared to brain-computer interfaces based on electrical neural interfaces. The brain-computer interface based on the electrical nerve interface has incomparable ultrahigh resolution and can record action potential of an individual. The brain-computer interface is used for recording long-term and continuous action potentials, namely the nerve models, and is helpful for researching the change of nerve activity patterns such as injury, memory, learning, degeneration and the like.
Existing Printed Circuit Board Assembly (PCBA) neural interfaces are typically large in size, high in power consumption, and commonly used for primate studies, but are difficult to carry freely for smaller organisms, such as rats. Although many low-cost miniaturized neuro-brain-computer interface devices based on PCB technology have emerged, the smallest volume is also 15X 12mm3The volume of the animal is too large for animals widely used in neuroscience research such as rats.
In order to solve the problem of volume limitation, in recent years, a fully-implanted brain-computer interface adopting an SoC integration scheme appears, and great progress is made, so that miniaturization, high channel number, full-implantation and multi-mode integration are realized. However, the conventional implanted integrated circuit is limited in area, so that a single integrated circuit cannot integrate a large-area capacitor, thereby limiting the power of the electrical stimulation. In addition, the traditional integrated circuit process cannot etch a thick metal layer, so that the quality factor of the on-chip inductor is low, and the efficiency of magnetic coupling wireless power supply is limited. The low power supply efficiency limits the function of the SoC scheme fully-implanted brain-computer interface, so that the existing system-on-chip (SoC) scheme fully-implanted brain-computer interface system generally has low wireless communication rate, low neural signal sampling rate and low stimulation current. The application of the fully-implanted brain-computer interface system in neuroscience, biomedical treatment and the like is severely restricted. There is therefore a need for a high quality fully implanted brain-computer interface system based on a system-level integration process.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a fully-implanted brain-computer interface based on a system-level integration process and a manufacturing method thereof.
In order to solve the problems, the invention adopts the following technical scheme:
a fully-implanted brain-computer interface based on a system-level integration process comprises an in-vitro base station part and an in-vivo implanted part; wherein the base station portion in vitro is connected with the implanted portion in vivo;
the external base station part comprises a wireless power supply system U1 and a wireless power supply transmitting coil LTXAnd a resonant matching capacitor CTXWireless communication system U2, onboard antenna L1; wireless power supply transmitting coil LTXAnd a resonance matching capacitor CTXAfter being connected in series, the power supply is connected with a wireless power supply system U1; the wireless communication system U2 is connected with an on-board antenna L1, and the on-board antenna L1 adopts a high-gain antenna;
the intracorporeal implantation part comprises a wireless power supply and communication chip U3 and a wireless energy receiving coil LRXMatching capacitor CRXThe system comprises a micro ceramic antenna L2, a special brain-computer interface chip U4 and an electrode array U5; wireless energy receiving coil LRXAnd matching capacitor CRXAfter being connected in series, the wireless power supply and communication chip U3 is connected; the wireless power supply and communication chip U3 is also respectively connected with the micro ceramic antenna L2 and the special brain-computer interface chip U4; the special brain-computer interface chip U4 is also connected with an electrode array U5, and the electrode array U5 is used for connecting biological nerve tissues;
the miniature ceramic antenna L2 is in wireless communication connection with the onboard antenna L1; wireless energy receiving coil LRXMatching capacitor CRXAnd a wireless power supply transmitting coil LTXAnd a resonant matching capacitor CTXAnd (4) matching.
Further, a wireless power supply and communication chip U3 and a special computer interface chip U4 of the implanted part in the body are embedded on the silicon substrate, wherein one surface of the chip provided with pins is close to the upper surface of the silicon substrate; the upper surface of the silicon substrate is also provided with a plurality of layers of rewiring formed by alternately forming dielectric layers and wiring layers, thick metal layers are arranged on the plurality of wiring layers, and dielectric layers are also arranged between the thick metal layers and the plurality of wiring layers; a wireless energy receiving coil L is arranged on the thick metal layerRXMatching capacitor CRXA micro ceramic antenna L2; the silicon substrate, the multilayer rewiring and the thick metal layer are all covered by the sealing layer and located inside the sealing layer, an electrode array U5 is arranged on the sealing layer, and the electrode array U5 penetrates through the sealing layer and is connected with the thick metal layer.
Furthermore, the dielectric layer is a polyimide layer, and the wiring layer is a copper wire.
Further, the sealing layer comprises SiO from inside to outside2Layer of Al2O3A layer and a parylene layer.
Further, the wireless communication system U2 operates at 2.4GHz, and the wireless communication system U2 includes a power amplifier and a low noise amplifier.
Further, the wireless power supply transmitting coil LTXAnd a resonance matching capacitor CTXThe resonance frequency of (2) is 13 MHz; wireless energy receiving coil LRXAnd matching capacitor CRXIs also 13 MHz.
A method for manufacturing an implanted part in a body of a fully-implanted brain-computer interface comprises the following steps:
step 1: the bare chip is thinned to be below a set thickness through rotary polishing; the bare chip comprises a special brain-computer interface chip U4 and a wireless power supply and communication chip U3;
step 2: carrying out deep silicon etching on the silicon substrate through chemical corrosion to generate a chip groove corresponding to the set thickness of the chip; the chip groove is used for arranging the polished bare chip;
and step 3: coating underfill on the bottom surface of the chip slot, and connecting the thinned bare chip;
and 4, step 4: leveling the surface of the chip; wherein the chip is a bare chip embedded in the chip slot;
and 5: depositing a bonding pad on the surface of the chip to form a surface passivation layer;
step 6: carrying out ion cleaning on the silicon substrate and the chip surface after leveling; coating a polyimide layer after cleaning, and curing;
and 7: photoetching the surface of the cured polyimide layer and depositing a copper metal layer for wiring; connecting the chip bonding pads through wires;
and 8: repeating the steps 6-7 for a set number of times to form a plurality of layers of RDL wiring;
and step 9: coating a polyimide layer on the surface layer in the multilayer RDL wiring, and curing; then, photoetching the polyimide layer and depositing a thick metal layer, generating a spiral coil structure through the thick metal layer deposition, and forming an antenna bonding pad and a capacitor bonding pad;
step 10: the miniature ceramic antenna L2 and the resonant matching capacitor CTX are mounted corresponding to the antenna pad and the capacitor pad through conductive adhesive;
step 11: respectively using SiO2、Al2O3Carrying out physical vapor deposition on parylene, and carrying out conformal packaging on the microsystem where the antenna and the capacitor are attached to form a sealing layer;
step 12: carrying out laser etching on the surface of a sealing layer of the packaged microsystem, and exposing electrode pins on the thick metal layer;
step 13: depositing gold and polymer on the electrode pins, and forming an electrode array U5 by the deposited electrode pins;
step 14: obtaining the micro system implanted in the body and finishing the steps.
Further, the set thickness in step 1 is 70 μm.
Further, the material deposited in the step 5 is SiO2 or conductive silver paste.
Further, the electrode array U5 in step 13 includes an electrical collection electrode and an electrical stimulation electrode.
The invention has the beneficial effects that:
the wireless power supply, the communication chip U3 and the special brain-computer interface chip U4 are integrated, so that heterogeneous integration of a fully-implanted brain-computer interface system is realized, and multifunctional integration of the implanted brain-computer interface system is realized;
the integrated inductor with high quality factor is used as a receiving coil for wireless power supply by using the thick wiring layer, so that the wireless power supply efficiency is improved, the problem of power supply limitation of the fully-implanted computer interface with the first area is solved, and the performance of the fully-implanted computer interface system is improved; the improved system performance can realize high neural signal sampling rate and high bandwidth to record LFP signals and spikes signals simultaneously;
by including SiO in the setting2Layer of Al2O3The multilayer sealing layers of the layers and the parylene layer realize moisture protection of fully-implanted equipment and improve long-term implantation capability of the equipment, and the outermost layer is the parylene layer, so that rejection of organisms is reduced through biocompatible materials, and high recorded signal quality is kept.
Drawings
FIG. 1 is a connection block diagram of a fully implanted brain-computer interface system of the present invention;
FIG. 2 is a block diagram of an intracorporeal implant portion of the present invention;
FIG. 3 is a schematic view of the surface of a thick metal layer according to the present invention.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict.
It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
The first embodiment is as follows:
as shown in fig. 1, a fully-implanted brain-computer interface based on a system-level integrated process includes an external base station portion and an internal implanted portion; wherein the base station portion is connected to the implanted portion.
The external base station part comprises a wireless power supply system U1 and a wireless power supply transmitting coil LTXAnd a resonant matching capacitor CTXWireless communication system U2, onboard antenna L1; wireless power supply transmitting coil LTXAnd a resonance matching capacitor CTXAfter being connected in series, the power supply is connected with a wireless power supply system U1; the wireless communication system U2 is connected to an on-board antenna L1, and the on-board antenna L1 employs a high gain antenna. The wireless communication system U2 is also connected to external devices, including computers and the like. Wireless power supply transmitting coil LTXAnd a resonance matching capacitor CTXThe resonant frequency of the wireless power supply is 13MHz, and the wireless power supply can generate 13MHz electromagnetic resonant frequency and output wireless power supply; it should be noted that the wireless power supply system U1 can adjust the output power in real time, so as to avoid damage to the living tissue when electromagnetic waves are transmitted. The wireless communication system U2 operates at 2.4GHz, and the wireless communication system U2 comprises a power amplifier and a low noise amplifier; through wireless communication system U2 and on-board antenna L1, stable wireless communication is made with the intracorporeal implanted part.
The intracorporeal implantation part comprises a wireless power supply and communication chip U3 and a wireless energy receiving coil LRXMatching capacitor CRXThe system comprises a micro ceramic antenna L2, a special brain-computer interface chip U4 and an electrode array U5; wireless energy receiving coil LRXAnd matching capacitor CRXAfter being connected in series, the wireless power supply and communication chip U3 is connected; the wireless power supply and communication chip U3 is also respectively connected with the micro ceramic antenna L2 and the special brain-computer interface chip U4; the special brain-computer interface chip U4 is also connected with an electrode array U5, and the electrode array U5 is used for connecting biological nerve tissues. It is composed ofThe medium miniature ceramic antenna L2 is in wireless communication connection with the on-board antenna L1; wireless energy receiving coil LRXMatching capacitor CRXAnd a wireless power supply transmitting coil LTXAnd a resonant matching capacitor CTXAnd (4) matching. Wireless energy receiving coil LRXAnd matching capacitor CRXThe resonant frequency of the electromagnetic resonance sensor is 13MHz, and the electromagnetic resonance sensor is matched with the external base station part to realize energy transfer through electromagnetic resonance.
As shown in fig. 2 and 3, in this example, the wireless power supply and communication chip U3 and the dedicated brain-computer interface chip U4 of the implanted part in the body are embedded on a silicon substrate, wherein the side of the chip provided with the pins is close to the upper surface of the silicon substrate; the upper surface of the silicon substrate is also provided with a plurality of layers of rewiring which are alternately formed by dielectric layers and wiring layers, wherein the dielectric layers are polyimide layers in the example, and the wiring layers are copper wires; a thick metal layer is arranged on the multilayer wiring layer, and a dielectric layer is also arranged between the thick metal layer and the multilayer wiring layer; a wireless energy receiving coil L is arranged on the thick metal layerRXMatching capacitor CRXA micro ceramic antenna L2; the silicon substrate, the multilayer rewiring and the thick metal layer are all covered by the sealing layer and located inside the sealing layer, the electrode array U5 is arranged on the sealing layer, and the electrode array U5 penetrates through the sealing layer and is connected with the thick metal layer. The sealing layer comprises SiO from inside to outside2Layer of Al2O3A layer and a parylene layer.
In the implementation process, the wireless communication connection of the in-vitro base station part and the in-vivo implanted part is realized through the miniature ceramic antenna L2 and the onboard antenna L1, the uploading of high-flux nerve signal data is realized, and a control instruction transmitted by the in-vitro base station part is received, wherein the control instruction comprises a brain-computer interface chip U4 nerve signal sampling rate and sampling digit and an electric stimulation signal sent by a special brain-computer interface chip U4; high Q value wireless energy receiving coil L connected with wireless power supply and communication chip U3 through implanted part in vivoRXMatching capacitor CRXGenerates electromagnetic resonance and realizes the wireless power supply transmitting coil L of the external base station partTXAnd resonance matching capacitor CTXElectromagnetic resonance wireless energy reception; by connecting the special brain-computer interface chip U4 with wirelessThe power supply and communication chip U3 is connected to receive the working energy provided by the wireless power supply and communication chip U3 and can realize wired communication with each other; the electrode array U5 is used for collecting nerve signals and performing electrostimulation regulation on nerve activity.
A method for manufacturing an implanted part in a body of a fully-implanted brain-computer interface comprises the following steps:
step 1: the thickness of the bare chip is reduced to below 70 mu m by rotary grinding; the bare chip comprises a special brain-computer interface chip U4 and a wireless power supply and communication chip U3;
step 2: carrying out deep silicon etching on the silicon substrate through chemical corrosion to generate a chip groove with the depth of 70 microns; the chip groove is used for arranging the polished bare chip;
and step 3: coating underfill on the bottom surface of the chip slot, and connecting the thinned bare chip;
and 4, step 4: leveling the surface of the chip; wherein the chip is a bare chip embedded in the chip slot;
and 5: depositing a bonding pad on the surface of the chip to form a surface passivation layer; wherein the deposited material is SiO2 or conductive silver paste;
step 6: carrying out ion cleaning on the silicon substrate and the chip surface after leveling; coating a polyimide layer after cleaning, and curing;
and 7: photoetching the surface of the cured polyimide layer and depositing a copper metal layer for wiring; connecting the chip bonding pads through wires;
and 8: repeating the steps 6-7 for a set number of times to form a plurality of layers of RDL wiring;
and step 9: coating a polyimide layer on the surface layer in the multilayer RDL wiring, and curing; then, photoetching the polyimide layer and depositing a thick metal layer, generating a spiral coil structure through the thick metal layer deposition, and forming an antenna bonding pad and a capacitor bonding pad;
step 10: the miniature ceramic antenna L2 and the resonant matching capacitor C are connected by conductive adhesiveTXThe surface mounting is finished corresponding to the antenna bonding pad and the capacitor bonding pad;
step 11: is divided intoUsing SiO2、Al2O3Carrying out physical vapor deposition on parylene, and carrying out conformal packaging on the microsystem where the antenna and the capacitor are attached to form a sealing layer;
step 12: carrying out laser etching on the surface of a sealing layer of the packaged microsystem, and exposing electrode pins on the thick metal layer;
step 13: depositing gold and polymer on the electrode pins, and forming an electrode array U5 by the deposited electrode pins; electrode array U5 in this example includes an electrical collection electrode and an electrical stimulation electrode;
step 14: obtaining the micro system implanted in the body and finishing the steps.
And the bottom filler in the step 3 is silver paste.
The step 9 of generating the spiral coil structure as the wireless energy receiving coil L through thick metal layer depositionRX. The inductance of the spiral coil is reduced through the thick metal layer and the width of the wide wiring, and the energy receiving coil L is improvedRXThe Q value of (1).
The sealing layer in the step 11 comprises SiO2Layer of Al2O3The layer and the parylene layer form a multi-layer seal, improving the sealing effect.
The above description is only one specific example of the present invention and should not be construed as limiting the invention in any way. It will be apparent to persons skilled in the relevant art(s) that, having the benefit of this disclosure and its principles, various modifications and changes in form and detail can be made without departing from the principles and structures of the invention, which are, however, encompassed by the appended claims.

Claims (10)

1. A fully-implanted brain-computer interface based on a system-level integration process is characterized by comprising an in-vitro base station part and an in-vivo implanted part; wherein the base station portion in vitro is connected with the implanted portion in vivo;
the external base station part comprises a wireless power supply system U1 and a wireless power supply transmitting coil LTXAnd a resonant matching capacitor CTXA wireless communication system U2, an onboard antennaLine L1; wireless power supply transmitting coil LTXAnd a resonance matching capacitor CTXAfter being connected in series, the power supply is connected with a wireless power supply system U1; the wireless communication system U2 is connected with an on-board antenna L1, and the on-board antenna L1 adopts a high-gain antenna;
the intracorporeal implantation part comprises a wireless power supply and communication chip U3 and a wireless energy receiving coil LRXMatching capacitor CRXThe system comprises a micro ceramic antenna L2, a special brain-computer interface chip U4 and an electrode array U5; wireless energy receiving coil LRXAnd matching capacitor CRXAfter being connected in series, the wireless power supply and communication chip U3 is connected; the wireless power supply and communication chip U3 is also respectively connected with the micro ceramic antenna L2 and the special brain-computer interface chip U4; the special brain-computer interface chip U4 is also connected with an electrode array U5, and the electrode array U5 is used for connecting biological nerve tissues;
the miniature ceramic antenna L2 is in wireless communication connection with the onboard antenna L1; wireless energy receiving coil LRXMatching capacitor CRXAnd a wireless power supply transmitting coil LTXAnd a resonant matching capacitor CTXAnd (4) matching.
2. The fully-implanted brain-computer interface based on system-level integrated technology of claim 1, wherein the wireless power and communication chip U3 and the dedicated brain-computer interface chip U4 of the implanted part in vivo are embedded on a silicon substrate, wherein the side of the chip provided with the pins is close to the upper surface of the silicon substrate; the upper surface of the silicon substrate is also provided with a plurality of layers of rewiring formed by alternately forming dielectric layers and wiring layers, thick metal layers are arranged on the plurality of wiring layers, and dielectric layers are also arranged between the thick metal layers and the plurality of wiring layers; a wireless energy receiving coil L is arranged on the thick metal layerRXMatching capacitor CRXA micro ceramic antenna L2; the silicon substrate, the multilayer rewiring and the thick metal layer are all covered by the sealing layer and located inside the sealing layer, an electrode array U5 is arranged on the sealing layer, and the electrode array U5 penetrates through the sealing layer and is connected with the thick metal layer.
3. The fully-implanted brain-computer interface based on system-level integrated process of claim 2, wherein the dielectric layer is a polyimide layer and the wiring layer is a copper wire.
4. The fully-implanted brain-computer interface based on the system-level integrated process of claim 2, wherein the sealing layer comprises a SiO2 layer, an Al2O3 layer and a parylene layer from inside to outside.
5. The fully implanted brain-computer interface based on system-level integrated process of claim 1, wherein the wireless communication system U2 operates at 2.4GHz and the wireless communication system U2 comprises a power amplifier and a low noise amplifier.
6. The fully-implanted brain-computer interface based on the system-level integrated process of claim 1, wherein the resonant frequency of the wireless power transmission coil LTX and the resonant matching capacitor CTX is 13 MHz; the resonant frequency of the wireless energy receiving coil LRX and the matching capacitor CRX is also 13 MHz.
7. A method for manufacturing an implanted part in a body of a fully-implanted brain-computer interface is characterized by comprising the following steps:
step 1: the bare chip is thinned to be below a set thickness through rotary polishing; the bare chip comprises a special brain-computer interface chip U4 and a wireless power supply and communication chip U3;
step 2: carrying out deep silicon etching on the silicon substrate through chemical corrosion to generate a chip groove corresponding to the set thickness of the chip; the chip groove is used for arranging the polished bare chip;
and step 3: coating underfill on the bottom surface of the chip slot, and connecting the thinned bare chip;
and 4, step 4: leveling the surface of the chip; wherein the chip is a bare chip embedded in the chip slot;
and 5: depositing a bonding pad on the surface of the chip to form a surface passivation layer;
step 6: carrying out ion cleaning on the silicon substrate and the chip surface after leveling; coating a polyimide layer after cleaning, and curing;
and 7: photoetching the surface of the cured polyimide layer and depositing a copper metal layer for wiring; connecting the chip bonding pads through wires;
and 8: repeating the steps 6-7 for a set number of times to form a plurality of layers of RDL wiring;
and step 9: coating a polyimide layer on the surface layer in the multilayer RDL wiring, and curing; then, photoetching the polyimide layer and depositing a thick metal layer, generating a spiral coil structure through the thick metal layer deposition, and forming an antenna bonding pad and a capacitor bonding pad;
step 10: the miniature ceramic antenna L2 and the resonant matching capacitor CTX are mounted corresponding to the antenna pad and the capacitor pad through conductive adhesive;
step 11: respectively using SiO2、Al2O3Carrying out physical vapor deposition on parylene, and carrying out conformal packaging on the microsystem where the antenna and the capacitor are attached to form a sealing layer;
step 12: carrying out laser etching on the surface of a sealing layer of the packaged microsystem, and exposing electrode pins on the thick metal layer;
step 13: depositing gold and polymer on the electrode pins, and forming an electrode array U5 by the deposited electrode pins;
step 14: obtaining the micro system implanted in the body and finishing the steps.
8. The method for manufacturing the implanted portion of the fully implanted brain-computer interface according to claim 7, wherein the set thickness in step 1 is 70 μm.
9. The method for manufacturing the implanted portion of the fully implanted brain-computer interface according to claim 7, wherein the material deposited in the step 5 is SiO2 or conductive silver paste.
10. The method for manufacturing the implanted part of the fully implanted brain-computer interface of claim 7, wherein the electrode array U5 in step 13 comprises an electrical collecting electrode and an electrical stimulating electrode.
CN202111564401.6A 2021-12-20 2021-12-20 Fully-implanted brain-computer interface based on system-level integration process and manufacturing method Pending CN114391851A (en)

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