CN114389001B - Terahertz MEMS reconfigurable power divider and implementation method thereof - Google Patents
Terahertz MEMS reconfigurable power divider and implementation method thereof Download PDFInfo
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- CN114389001B CN114389001B CN202210041514.6A CN202210041514A CN114389001B CN 114389001 B CN114389001 B CN 114389001B CN 202210041514 A CN202210041514 A CN 202210041514A CN 114389001 B CN114389001 B CN 114389001B
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Abstract
The invention discloses a terahertz MEMS reconfigurable power divider and an implementation method thereof. According to the terahertz waveguide power divider, a first rectangular waveguide and a second rectangular waveguide are arranged at the upper end of a first coupling waveguide, a third rectangular waveguide and a fourth rectangular waveguide are arranged at the lower end of a second coupling waveguide, the first coupling waveguide and the second coupling waveguide are connected through a first cascade waveguide and a second cascade waveguide to form the terahertz waveguide power divider, an MEMS angle actuator is embedded into the first coupling waveguide and the second coupling waveguide, and bias voltage is applied to a double-wafer cantilever beam array of the MEMS angle actuator to control the rotation angle of a metal surface; the angle of the MEMS angle actuator is adjusted through the bias voltage, so that the continuous adjustment of the output power ratio of the terahertz waveguide power divider is realized, and meanwhile, the terahertz waveguide power divider has the functions of a terahertz equal-division power divider, a terahertz 10dB coupler and a terahertz switch under different angles; the terahertz wave antenna has the advantages of power adjustment and function multiplexing, and can be applied to gain adjustment, beam scanning and forming of the terahertz wave array antenna.
Description
Technical Field
The invention relates to a terahertz technology, in particular to a terahertz MEMS reconfigurable power divider and an implementation method thereof.
Background
Terahertz (THz) waves generally refer to electromagnetic waves with a frequency within a range of 0.1-10 THz (with a wavelength of 3000-30 μm), coincide with millimeter waves in a long wave band, coincide with infrared light in a short wave band, and are transition regions from a macroscopic classical theory to a microscopic quantum theory and transition regions from electronics to photonics. The high-frequency-band-width-ratio radar has the characteristics of wide frequency band, strong penetrability, short wavelength, low energy and the like, can realize the data capacity and the communication rate which are hundreds of times of 5G, and realizes the functions of anti-stealth high-resolution radar, high-precision positioning imaging, nondestructive testing and the like. The terahertz technology has significant scientific value and wide application prospect in object imaging, environment monitoring, radio astronomy, broadband mobile communication, particularly in the military fields of satellite communication, military radar and the like, and therefore has received great attention and attention from the international academic world, the industrial world and governments of various countries. At present, technologies such as terahertz communication, radar, imaging, and the like have already been used. However, the terahertz radio frequency front-end system still has the problems of high power consumption, limited transmitting power, low receiving sensitivity, poor receiving and transmitting power adjustability and the like, and the integration, intellectualization and industrialization development of the terahertz technology and the application system are greatly limited. The problems of output power and receiving sensitivity of the transmitter can be solved by improving the performance of the device and the chip, but the power regulation implementation method of the terahertz signal is still limited, most of the traditional power regulation devices are in a fixed attenuation mode, and the problems of large loss, low control precision, poor stability and the like exist, so that the requirements of systems such as terahertz phased arrays, MIMO communication and the like on low loss and intelligent power distribution of multi-path terahertz signals cannot be met.
The terahertz power divider is used as an important component of a terahertz radio frequency front end, can divide one path of signals into multiple paths, can combine the multiple paths of signals into one path, and has an important role in array antennas, phase-controlled radars and power synthesis networks. The terahertz reconfigurable power divider with adjustable output power can be used for power adjustment of terahertz signals in a terahertz front-end system; the terahertz wave antenna can also be used in a feed system of an array antenna, and the functions of gain adjustment, beam scanning, shaping and the like of the terahertz wave antenna are realized by amplitude regulation. However, related researches on the conventional terahertz reconfigurable power divider are few, and the problems of small adjustable range, low precision, large loss, single function and the like exist, so that the terahertz reconfigurable power divider is lack of practical value; therefore, the terahertz reconfigurable power divider with large adjustable range, low loss, high precision and function multiplexing has important significance in research.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a terahertz MEMS (Micro-Electro-Mechanical System) reconfigurable power divider and an implementation method thereof, the angle of an MEMS angle actuator is adjusted through bias voltage, the output power of the terahertz waveguide power divider is continuously adjustable in a large range, meanwhile, the terahertz waveguide power divider can have the functions of a terahertz switch, a terahertz equal-division power divider, a terahertz 10dB coupler and the like under different angles, has the advantages of power adjustment and function multiplexing, and can be applied to gain adjustment, beam scanning and shaping of terahertz array antennas.
The invention aims to provide a terahertz MEMS reconfigurable power divider.
The reconfigurable power divider of the terahertz MEMS comprises: the terahertz waveguide power divider and the MEMS angle actuator are arranged on the terahertz waveguide power divider;
the terahertz waveguide power divider comprises: first to fourth rectangular waveguides, a first coupling waveguide, a second coupling waveguide, a first cascade waveguide, and a second cascade waveguide; the first to fourth rectangular waveguides are completely the same, the first and second coupling waveguides are completely the same, and the first and second cascade waveguides are completely the same; the terahertz wave propagation surface is an xy plane, the propagation directions of the first rectangular waveguide, the second rectangular waveguide, the fourth rectangular waveguide and the first coupling waveguide are along the y axis, and the propagation directions of the first coupling waveguide and the second coupling waveguide are along the x axis; the first rectangular waveguide and the second rectangular waveguide are respectively connected to the upper end of the first coupling waveguide through waveguide elbows; the third rectangular waveguide and the fourth rectangular waveguide are respectively connected to the lower end of the second coupling waveguide through waveguide elbows; the lower end of the first coupling waveguide is connected with the upper end of the second coupling waveguide through a first cascade waveguide and a second cascade waveguide, and the first cascade waveguide and the second cascade waveguide are symmetrical around an x axis; the cross sections of the first to fourth rectangular waveguides, the first and second coupling waveguides and the first and second cascade waveguides along the propagation direction are all rectangular;
symmetrical openings are respectively formed at the bottoms of the first cascade waveguide and the second cascade waveguide, and MEMS angle actuators are installed at the bottoms of the first cascade waveguide and the second cascade waveguide;
the MEMS angle actuator includes: the double-chip cantilever beam array comprises a substrate, a metal base, a first heat insulation belt, a double-chip cantilever beam array, a second heat insulation belt, a metal surface, a power supply port, a ground port and a metal wire; wherein, corresponding to the openings at the bottoms of the first cascade waveguide and the second cascade waveguide, symmetrical mounting grooves are respectively arranged on the top surface of the substrate; respectively paving a metal base on the bottom surface in each mounting groove, wherein the metal base covers the bottom surfaces of the mounting grooves; a first heat insulation belt and a second heat insulation belt which are integrally connected are respectively arranged at the upper edge and the lower edge of the double-wafer cantilever beam array, and the first heat insulation belt and the second heat insulation belt are along the y axis; the lower edge of the second heat insulation belt is provided with a metal surface which is connected into a whole; the first heat insulation belt, the double-wafer cantilever beam array, the second heat insulation belt and the metal surface are connected into a whole and are positioned on the same plane to form a tunable plane; correspondingly arranging a tunable plane in each mounting groove, wherein the tunable plane is fixed on the edge of the upper side wall of each mounting groove through a first heat insulation belt, the twin-wafer cantilever beam array is heated and then bent by applying bias voltage to drive the whole tunable plane to rotate for a set angle by taking the first heat insulation belt as a shaft, the angle of the rotating shaft is in direct proportion to the bias voltage applied by an external power supply along the y axis, and the higher the bias voltage is, the larger the rotating angle of the tunable plane is; the outer edge of the substrate is larger than the openings at the bottoms of the first cascade waveguide and the second cascade waveguide, and the outer edge of the substrate is fixed outside the bottoms of the first cascade waveguide and the second cascade waveguide; the area of the tunable plane is not more than that of the mounting groove, the area of the opening is not less than that of the mounting groove, and the two tunable planes are respectively positioned in the first cascade waveguide and the second cascade waveguide through the corresponding openings; a power port and a ground port are arranged on the substrate, and the two bimorph cantilever beam arrays are respectively connected to the corresponding power port and the corresponding ground port through metal wires; an external power supply is connected to the power supply port and the ground port, and the energy of the external power supply is input into the bimorph cantilever beam array from the power supply port and then output from the ground port, so that bias voltage is applied to the bimorph cantilever beam array;
the first rectangular waveguide, the second rectangular waveguide, the third rectangular waveguide, the fourth rectangular waveguide and the fourth rectangular waveguide are equivalent to each other, terahertz waves incident from the first rectangular waveguide are divided into two paths with the same amplitude and 90-degree phase difference from the first coupled waveguide to the first cascaded waveguide and the second cascaded waveguide through the first coupled waveguide, two paths of terahertz waves are respectively transmitted into the first and second cascaded waveguides, tunable planes respectively positioned in the first and second cascaded waveguides are equivalent to ideal conductors, terahertz waves incident on the tunable planes are reflected back to the first coupled waveguide by the tunable planes, and terahertz waves which do not enter the tunable planes are transmitted to the second coupled waveguide through a gap between the tunable planes and the top of the cascaded waveguides; the size of a gap between the tunable plane and the top of the cascade waveguide is controlled by simultaneously adjusting the angle of the tunable plane in the first cascade waveguide and the angle of the tunable plane in the second cascade waveguide, so that the power of reflected or transmitted terahertz waves is controlled; an external power supply loads bias voltage to the double-wafer cantilever beam array through a power supply port and a ground port to heat the double-wafer cantilever beam array, and the double-wafer cantilever beam array bends due to heating, so that the double-wafer cantilever beam array rotates around the y axis, and the tunable plane is driven to rotate around the y axis; by adjusting the magnitude of the bias voltage loaded to the double-wafer cantilever beam array and adjusting the two tunable planes to rotate by the same angle around the y axis, the power of the terahertz waves reflected or transmitted at the tunable planes is adjusted; two paths of terahertz waves reflected to the first coupling waveguide from the first and second cascade waveguides are combined into one path according to the phase superposition principle and then output from the second rectangular waveguide; two terahertz waves transmitted from the first coupling waveguide and the second coupling waveguide to the second coupling waveguide are combined into one path by the phase superposition principle and then output from the third rectangular waveguide, wherein the fourth rectangular waveguide has no power output theoretically, so that the function of port impedance matching is realized; therefore, the power of the terahertz wave reflected or transmitted in the first and second cascade waveguides is controlled through the MEMS angle actuator, and the function of adjusting the output power of the terahertz waveguide power divider is realized.
The directions along the x-axis are defined as up and down, and the directions along the z-axis are defined as top and bottom.
The substrate of the MEMS angle actuator adopts one of silicon, silicon nitride, silicon carbide and gallium arsenide.
The first to fourth rectangular waveguides, the first and second coupling waveguides, and the first and second cascade waveguides are made of a high-conductivity material, such as brass, aluminum, or gold. The first to fourth rectangular waveguides have the same height and width as the first and second cascaded waveguides; the first and second coupling waveguides have a height corresponding to the first to fourth rectangular waveguides and the first and second cascade waveguides, and a width twice that of the first to fourth rectangular waveguides and the first and second cascade waveguides.
The first and second heat insulation belts are made of one of silicon dioxide, silicon nitride and polysilicon; the double-wafer cantilever beam array comprises a plurality of double-wafer cantilever beams, each double-wafer cantilever beam is positioned on an xz plane and comprises an upper layer and a lower layer, and the upper layer and the lower layer are made of materials with different thermal expansion coefficients, so that when bias voltage is applied for heating, the double-wafer cantilever beam array is bent due to the different thermal expansion coefficients; the metal surface is made of one of aluminum, copper, silver, nickel and gold; the power port, the ground port and the metal wire are all conductive metal; the metal substrate is made of one of aluminum, copper, silver, nickel and gold.
According to the terahertz MEMS reconfigurable power divider, when the angle of the tunable plane of the MEMS angle actuator is changed at 0-50 degrees, the power of the output port of the terahertz waveguide power divider can be adjusted within the range of 0.25% -95% of the input power; meanwhile, the output power ratio of the terahertz waveguide power divider is adjustable between-26 dB and 26 dB; when the angle of the tunable plane of the MEMS angle actuator is 25 degrees, the terahertz waveguide power divider has the function of a terahertz equal-division power divider; when the angle of the tunable plane of the MEMS angle actuator is 12 degrees, the terahertz waveguide power divider has the function of a terahertz 10dB coupler; when the angle of the tunable plane of the MEMS angle actuator is switched between 0 degree and 50 degrees, the terahertz waveguide power divider has the terahertz switching function.
The invention further aims to provide a realization method of the terahertz MEMS reconfigurable power divider.
The invention discloses a method for realizing a terahertz MEMS reconfigurable power divider, which comprises the following steps:
1) the first rectangular waveguide, the second rectangular waveguide, the third rectangular waveguide, the fourth rectangular waveguide and the fourth rectangular waveguide are equivalent to each other, and terahertz waves incident from the first rectangular waveguide are divided into two paths with the same amplitude and 90-degree phase difference from the first coupling waveguide to the first cascade waveguide and the second cascade waveguide;
2) the two paths of terahertz waves are respectively transmitted into the first cascade waveguide and the second cascade waveguide, tunable planes respectively positioned on the first cascade waveguide and the second cascade waveguide are equivalent to ideal conductors, terahertz waves incident on the tunable planes are reflected to the first coupling waveguide by the tunable planes, and terahertz waves which are not incident on the tunable planes are transmitted to the second coupling waveguide through a gap between the tunable planes and the top of the cascade waveguides;
3) the size of a gap between the tunable plane and the top of the cascade waveguide is controlled by simultaneously adjusting the angles of the tunable planes in the first cascade waveguide and the second cascade waveguide, so that the power of the reflected or transmitted terahertz wave is controlled;
4) an external power supply loads bias voltage to the double-wafer cantilever beam array through a power supply port and a ground port to heat the double-wafer cantilever beam array, and the double-wafer cantilever beam array bends due to heating, so that the double-wafer cantilever beam array rotates around the y axis, and the tunable plane is driven to rotate around the y axis;
5) by adjusting the magnitude of the bias voltage loaded to the double-wafer cantilever beam array and adjusting the two tunable planes to rotate by the same angle around the y axis, the power of the terahertz waves reflected or transmitted at the tunable planes is adjusted;
6) two paths of terahertz waves reflected to the first coupling waveguide from the first and second cascade waveguides are combined into one path according to the phase superposition principle and then output from the second rectangular waveguide; two paths of terahertz waves transmitted from the first coupling waveguide and the second coupling waveguide to the second coupling waveguide are combined into one path by virtue of a phase superposition principle and then output from the third rectangular waveguide, wherein the fourth rectangular waveguide has no power output theoretically, so that the effect of port impedance matching is realized; therefore, the power of the terahertz wave reflected or transmitted in the first and second cascade waveguides is controlled through the MEMS angle actuator, and the function of adjusting the output power of the terahertz waveguide power divider is realized.
In the step 5), when the angle of the tunable plane of the MEMS angle actuator is changed within 0-50 degrees, the power of the output port of the terahertz waveguide power divider can be adjusted within the range of 0.25% -95% of the input power; meanwhile, the output power ratio of the terahertz waveguide power divider is adjustable between-26 dB and 26 dB; when the angle of the tunable plane of the MEMS angle actuator is 25 degrees, the terahertz waveguide power divider has the function of a terahertz equal-division power divider; when the angle of the tunable plane of the MEMS angle actuator is 12 degrees, the terahertz waveguide power divider has the function of a terahertz 10dB coupler; when the angle of the tunable plane of the MEMS angle actuator is switched between 0 degree and 50 degrees, the terahertz waveguide power divider has the terahertz switching function.
The invention has the advantages that:
(1) the terahertz wave front-end system has the function of continuously adjusting the power of the terahertz wave in a large range, and solves the problems that the power is difficult to adjust and the adjustable range is low in the current terahertz radio-frequency front-end system;
(2) according to the terahertz power divider, the angle deflection of a tunable plane is realized by adjusting the bias voltage of the MEMS actuator, the large-range adjustability of the output power and the output power ratio of the terahertz power divider is realized by utilizing the mechanical movable structure, and the problem of poor adjustable function of the traditional terahertz power divider is solved;
(3) according to the terahertz waveguide power divider, the output power of the terahertz waveguide power divider is changed by adjusting the bias voltage, so that the terahertz waveguide power divider can be used for the terahertz power divider and also can be used as a terahertz coupler or a terahertz switch, and the terahertz waveguide power divider has the advantage of function multiplexing;
(4) the MEMS angle actuator adopted in the invention has the advantages of small structure, low loss, easy integration of terahertz devices and convenient large-scale processing.
Drawings
Fig. 1 is a schematic diagram of an embodiment of a terahertz MEMS reconfigurable power divider of the present invention;
fig. 2 is a schematic plan structure view of an MEMS angle actuator according to an embodiment of the terahertz MEMS reconfigurable power divider of the present invention;
fig. 3 is a wiring diagram of an MEMS angle actuator according to an embodiment of the terahertz MEMS reconfigurable power divider of the present invention;
fig. 4 is a schematic diagram of an MEMS angle actuator of an embodiment of the terahertz MEMS reconfigurable power divider of the present invention in a working state;
FIG. 5 is a front view of a MEMS angle actuator of one embodiment of the terahertz MEMS reconfigurable power divider of the present invention in a working state;
FIG. 6 is a graph showing the variation of the output power and the output power ratio with angle of one embodiment of the terahertz MEMS reconfigurable power divider of the invention;
FIG. 7 is a S parameter curve diagram of an embodiment of the terahertz MEMS reconfigurable power divider of the invention as an equal division power divider;
fig. 8 is an S-parameter curve diagram of the second rectangular waveguide of the terahertz MEMS reconfigurable power divider of the present invention as a switch;
fig. 9 is an S-parameter curve diagram of the third rectangular waveguide of the terahertz MEMS reconfigurable power divider of the present invention as a switch;
fig. 10 is a S-parameter graph of an embodiment of the terahertz MEMS reconfigurable power divider of the present invention as a 10dB coupler.
Detailed Description
The invention will be further elucidated by means of specific embodiments in the following with reference to the drawing.
As shown in fig. 1, the terahertz MEMS reconfigurable power divider of the present embodiment includes: the terahertz waveguide power divider comprises a terahertz waveguide power divider 1 and an MEMS angle actuator 2;
the terahertz waveguide power divider 1 includes: a first rectangular waveguide 101, a second rectangular waveguide 102, a third rectangular waveguide 103, and a fourth rectangular waveguide 104, a first coupling waveguide 105, a second coupling waveguide 106, a first cascaded waveguide 107, and a second cascaded waveguide 108; the first to fourth rectangular waveguides 101 to 104 are identical, the first and second coupling waveguides 105 and 106 are identical, and the first and second cascade waveguides 107 and 108 are identical; the terahertz wave propagation surface is an xy plane, the propagation directions of the first to fourth rectangular waveguides 101-104 are along the y axis, and the propagation directions of the first and second coupling waveguides 105 and 106 are along the x axis; the first and second rectangular waveguides 102 are connected to the upper end of the first coupling waveguide 105 by waveguide bends, respectively; the third and fourth rectangular waveguides 104 are connected to the lower end of the second coupling waveguide 106 by waveguide bends, respectively; the lower end of the first coupling waveguide 105 is connected with the upper end of the second coupling waveguide 106 through a first cascade waveguide 107 and a second cascade waveguide 108, and the first cascade waveguide 107 and the second cascade waveguide 108 are symmetrical about the x axis; the cross sections of the first to fourth rectangular waveguides 101 to 104, the first and second coupling waveguides 105 and 106, and the first and second cascade waveguides 107 and 108 in the propagation direction are all rectangular; the first to fourth rectangular waveguides 101 to 104 have the same height and width as the first and second cascade waveguides 107 and 108; the first and second coupling waveguides 105 and 106 have a height corresponding to the first to fourth rectangular waveguides 101 to 104 and the first and second cascade waveguides 107 and 108 and a width twice that of the first to fourth rectangular waveguides 101 to 104 and the first and second cascade waveguides 107 and 108;
symmetrical openings are respectively formed at the bottoms of the first cascade waveguide and the second cascade waveguide, and MEMS angle actuators are installed at the bottoms of the first cascade waveguide and the second cascade waveguide;
as shown in fig. 2 and 3, the MEMS angle actuator 2 includes: a substrate 201, a metal base 208, a first thermal isolation strip 204, a dual-wafer cantilever array 202, a second thermal isolation strip 205, a metal plane 203, a power port 206, a ground port 207, and a metal wire 209; wherein, corresponding to the openings at the bottom of the first and second cascade waveguides 107 and 108, symmetrical mounting grooves are respectively arranged on the top surface of the substrate 201; laying a metal base 208 on the bottom surface in each mounting groove respectively, wherein the metal base 208 covers the bottom surface of the mounting groove; a first thermal insulation strip 204 and a second thermal insulation strip 205 which are integrally connected are respectively arranged at the upper edge and the lower edge of the double-wafer cantilever array 202, and the first thermal insulation strip 205 and the second thermal insulation strip 205 are arranged along the y axis; a metal surface 203 which is connected into a whole is arranged at the lower edge of the second heat insulation belt 205; the first heat insulation belt 204, the double-wafer cantilever beam array 202, the second heat insulation belt 205 and the metal surface 203 are connected into a whole and are positioned on the same plane to form a tunable plane; correspondingly setting a tunable plane in each mounting groove, wherein the tunable plane is fixed on the edge of the upper side wall of the mounting groove through a first heat insulation belt 204, and the twin-wafer cantilever beam array 202 is bent after being heated by applying bias voltage to drive the whole tunable plane to rotate by a set angle by taking the first heat insulation belt 204 as an axis, wherein the angle is in direct proportion to the bias voltage applied by an external power supply along the y axis, and the higher the bias voltage is, the larger the rotation angle of the tunable plane is; the outer edge of the substrate 201 is larger than the openings of the bottoms of the first and second cascade waveguides 107 and 108, and the outer edge of the substrate 201 is fixed outside the bottoms of the first and second cascade waveguides 107 and 108; the area of the tunable plane is not more than that of the mounting groove, the area of the opening is not less than that of the mounting groove, and the two tunable planes are respectively positioned in the first cascade waveguide 107 and the second cascade waveguide 108 through the corresponding openings; a power port 206 and a ground port 207 are arranged on the substrate 201, and the two bimorph cantilever arrays 202 are respectively connected to the corresponding power port 206 and the corresponding ground port 207 through metal wires 209; an external power supply is connected to the power port 206 and the ground port 207, and energy of the external power supply is input into the bimorph cantilever array 202 from the power port 206 and then output from the ground port 207, so that bias voltage is applied to the bimorph cantilever array 202.
In the present implementation, the substrate 201 of the MEMS angle actuator is made of silicon; the first to fourth rectangular waveguides 101 to 104, the first and second coupling waveguides 105 and 106, and the first and second cascade waveguides are made of brass; the first to fourth rectangular waveguides 101 to 104 and the first and second coupling waveguides 105 and 106 each have a WR-7 standard waveguide structure, and have a wide side a of 1.65mm and a narrow side b of 0.83 mm; the first and second coupling waveguides 105 and 106 have a length of 2.2mm and a width of 2 a-3.3 mm; the metal surface 203 is made of aluminum, the length is 1.32mm, the width is 0.6mm, and the thickness is 1.75 mu m; the substrate 201 is made of silicon with the length of 3.95mm and the width of 1.2 mm; the first and second heat-insulating strips 205 have a length of 1.32mm and a width of 10 μm, and are made of silicon dioxide; the double-wafer cantilever array 202 is 1.32mm in total length and 180 μm in width, and comprises 66 double-wafer cantilevers, each double-wafer cantilever is located on an XZ plane, the width of each double-wafer cantilever is 12 μm, the distance between the double-wafer cantilevers is 8 μm, the total thickness is 1.75 μm, each double-wafer cantilever is divided into an upper layer and a lower layer, the upper layer is made of metal aluminum and 0.5 μm in thickness, the lower layer is made of polysilicon material and 1.25 μm in thickness; the power port 206 and the ground port 207 are made of gold; the width of the gold wire is 2 μm, the thickness of the gold wire is 0.5 μm, and the gold wire is connected in series by taking three bimorph cantilevers as a reference; the metal substrate 208 is made of aluminum, the length of the metal substrate 208 is 1.35mm, the width of the metal substrate 208 is 0.84mm, the thickness of the metal substrate 208 is 10 micrometers, and when the MEMS angle actuator is not in operation, the metal substrate 208 is spaced from the metal surface 203 by about 40 micrometers, and the metal substrate 208 is mainly used for eliminating terahertz wave energy leakage caused by waveguide gaps.
The implementation method of the terahertz MEMS reconfigurable power divider comprises the following steps:
1) the first rectangular waveguide 101 to the fourth rectangular waveguide 104 are equivalent to each other, and terahertz waves incident from the first rectangular waveguide 101 are divided into two paths with the same amplitude and 90-degree phase difference through the first coupling waveguide 105 to the first cascade waveguide and the second cascade waveguide;
2) two paths of terahertz waves are respectively transmitted into the first and second cascade waveguides 107 and 108, tunable planes respectively positioned on the first and second cascade waveguides 107 and 108 are equivalent to ideal conductors, the terahertz waves incident on the tunable planes are reflected back to the first coupling waveguide 105 by the tunable planes, and due to the coupling effect, the phase difference of the reflected terahertz waves at the first rectangular waveguide 101 is calculated to be 180 degrees, the phase difference at the second rectangular waveguide 102 is calculated to be 0 degree, so that the power is counteracted at the first rectangular waveguide 101, and the power is superposed and output at the second rectangular waveguide 102; the terahertz waves which are not incident to the tunable plane are transmitted to the second coupling waveguide 106 through a gap between the tunable plane and the top of the cascade waveguide, and due to the coupling effect, the phase difference of the part of terahertz waves at the third rectangular waveguide 103 is calculated to be 0 degrees, the phase difference of the part of terahertz waves at the fourth rectangular waveguide 102 is calculated to be 180 degrees, so that the power is offset at the first rectangular waveguide 101, and the terahertz waves are superposed and output at the second rectangular waveguide 102;
3) by adjusting the angle of the tunable plane in the first and second cascaded waveguides 107 and 108 at the same time, the size of the gap between the tunable plane and the top of the cascaded waveguides is controlled, thereby controlling the power of the reflected or transmitted terahertz waves, as shown in fig. 4 and 5;
4) an external power supply loads bias voltage to the bimorph cantilever array 202 through the power supply port 206 and the ground port 207 to heat the bimorph cantilever array 202, and the bimorph cantilever array 202 bends due to heating, so that the bimorph cantilever array 202 rotates around the y axis, and the tunable plane is driven to rotate around the y axis;
7) by adjusting the magnitude of the bias voltage loaded to the bimorph cantilever array 202 and adjusting the two tunable planes to rotate by the same angle around the y axis, the power of the terahertz waves reflected or transmitted at the tunable planes is adjusted;
5) two terahertz waves reflected to the first coupling waveguide 105 from the first and second cascade waveguides 107 and 108 are combined into one path by the phase superposition principle and then output from the second rectangular waveguide 102; two paths of terahertz waves transmitted from the first and second cascade waveguides 107 and 108 to the second coupling waveguide 106 are combined into one path by the phase superposition principle and then output from the third rectangular waveguide 103, wherein the fourth rectangular waveguide 104 has no power output theoretically, and the effect of port impedance matching is realized; therefore, the power of the terahertz wave reflected or transmitted in the first and second cascade waveguides 107 and 108 is controlled by the MEMS angle actuator, and the function of adjusting the output power of the terahertz waveguide power divider is realized.
Performing simulation by using High Frequency Structure Simulation (HFSS) simulation software to obtain the change of the S parameter ratio with the angle of the terahertz MEMS reconfigurable power divider shown in fig. 6 at 140GHz, wherein the S parameter represents the ratio of the output power to the input power, and after normalizing the input power, S11 represents the power reflected back to the first rectangular waveguide 101; s12 represents the power output to the second rectangular waveguide 102; s13 represents the power output to the third rectangular waveguide 103; s14 represents the power output to the fourth rectangular waveguide 104; it can be seen that: when the angle of the MEMS angle actuator is changed at 0-50 degrees, the output power S12 of the second rectangular waveguide 102 and the output power S13 of the third rectangular waveguide 103 of the terahertz waveguide power divider are changed within the range of-26 dB to-0.22 dB, and the output power S12 and the output power S13 are equivalent to that the output power is adjustable within the range of 0.25% -95% of the input power; the output power ratio S12/S13 of the second and third rectangular waveguides 103 varies in the range of-26 dB to 26dB, which is equivalent to the output power ratio of 1:400 to 400: 1 is adjustable. A very large output power and output power ratio adjustable range is obtained.
As shown in fig. 7, when the angle of the MEMS angle actuator is 25 °, the power S12 output by the terahertz waveguide power divider to the second rectangular waveguide 102 and the power S13 output to the third rectangular waveguide 103 are both very close to-3.26 dB, which is equivalent to 47.2% of the input power; meanwhile, the power S11 (return loss) reflected back to the first rectangular waveguide 101 and the power S14 (isolation) output to the fourth rectangular waveguide 104 are larger than 10dB, so that the terahertz equivalent power divider can be used as a terahertz equivalent power divider, and the amplitude balance is good in the range of 137.5-147.5 GHz.
As shown in fig. 8, it can be seen from the power S12 output from the terahertz-waveguide power divider to the second rectangular waveguide 102 that: when the angle of the MEMS angle actuator is 0 degree, the power S12 output to the second rectangular waveguide 102 is higher than-0.6 dB at 130.9-144.5 GHz, namely, the energy transmission efficiency is higher than 87.1%. When the angle of the MEMS angle actuator is 50 degrees, the power S12 output to the second rectangular waveguide 102 is lower than-20 dB at 130.9-144.5 GHz, namely, the energy transmission efficiency is lower than 1%. Therefore, by switching the MEMS angle actuator between 0/50 °, a terahertz switch function can be realized between the first rectangular waveguide 101 and the second rectangular waveguide 102.
As shown in fig. 9, from the parameters of the power S13 output to the third rectangular waveguide 103, it can be seen that: when the angle of the MEMS angle actuator is 0 degree, the power S13 output to the third rectangular waveguide 103 is higher than-1.3 dB at 128.1-147.8 GHz, namely, the energy transmission efficiency is higher than 74.6%. When the angle of the MEMS angle actuator is 50 degrees, the power S13 output to the third rectangular waveguide 103 is lower than-17 dB at 128.1-147.8 GHz, namely, the energy transmission efficiency is lower than 2%. Therefore, by switching the MEMS angle actuator between 0/50 °, a terahertz switching function can be realized also between the first rectangular waveguide 101 and the third rectangular waveguide 103. By combining the switching functions of the first rectangular waveguide 101 and the second rectangular waveguide 102, the terahertz single-pole double-throw switch can be realized between 130.9 and 144.5 GHz.
As shown in FIG. 10, when the angle of the MEMS angle actuator is 12 °, the power S12 outputted to the second rectangular waveguide 102 is close to-10 dB between 137.5 GHz and 147.5GHz, and both the power S11 (return loss) reflected back to the first rectangular waveguide 101 and the power S14 (isolation) outputted to the fourth rectangular waveguide 104 are lower than-10 dB, so that the terahertz 10dB coupler can be used.
By combining the analysis and simulation, when the angle of the terahertz waveguide power divider based on the MEMS angle actuator is adjusted within the range of 0-50 degrees, the terahertz waveguide power divider can realize that the output power is adjustable within the range of 0.25-95 percent and the output power ratio is adjustable within the range of-26 dB. When the angle is switched between 0 degree and 50 degrees, the terahertz MEMS reconfigurable power divider can realize the function of a terahertz switch or a terahertz single-pole double-throw switch, can realize the terahertz equal-division power divider when the angle is 25 degrees, and can realize the function of a terahertz 10dB coupler when the angle is 12 degrees. The multifunctional terahertz MEMS reconfigurable power divider has wide application in communication, radar and imaging technologies.
Finally, it is noted that the disclosed embodiments are intended to aid in further understanding of the invention, but those skilled in the art will appreciate that: various substitutions and modifications are possible without departing from the spirit and scope of the invention and the appended claims. Therefore, the invention should not be limited to the embodiments disclosed, but the scope of the invention is defined by the appended claims.
Claims (10)
1. The terahertz MEMS reconfigurable power divider is characterized by comprising: the terahertz waveguide power divider and the MEMS angle actuator are arranged on the terahertz waveguide power divider;
the terahertz waveguide power divider comprises: first to fourth rectangular waveguides, a first coupling waveguide, a second coupling waveguide, a first cascade waveguide, and a second cascade waveguide; wherein the first to fourth rectangular waveguides are identical, the first and second coupling waveguides are identical, and the first and second cascade waveguides are identical; the terahertz wave propagation surface is an xy plane, the propagation directions of the first rectangular waveguide, the second rectangular waveguide, the fourth rectangular waveguide and the first coupling waveguide are along the y axis, and the propagation directions of the first coupling waveguide and the second coupling waveguide are along the x axis; the first rectangular waveguide and the second rectangular waveguide are respectively connected to the upper end of the first coupling waveguide through waveguide elbows; the third rectangular waveguide and the fourth rectangular waveguide are respectively connected to the lower end of the second coupling waveguide through waveguide elbows; the lower end of the first coupling waveguide is connected with the upper end of the second coupling waveguide through a first cascade waveguide and a second cascade waveguide, and the first cascade waveguide and the second cascade waveguide are symmetrical about an x axis; the cross sections of the first to fourth rectangular waveguides, the first and second coupling waveguides and the first and second cascade waveguides along the propagation direction are all rectangular;
symmetrical openings are respectively formed at the bottoms of the first cascade waveguide and the second cascade waveguide, and MEMS angle actuators are installed at the bottoms of the first cascade waveguide and the second cascade waveguide;
the MEMS angle actuator includes: the double-chip cantilever beam array comprises a substrate, a metal base, a first heat insulation belt, a double-chip cantilever beam array, a second heat insulation belt, a metal surface, a power supply port, a ground port and a metal wire; wherein, corresponding to the openings at the bottoms of the first cascade waveguide and the second cascade waveguide, symmetrical mounting grooves are respectively arranged on the top surface of the substrate; respectively paving a metal base on the bottom surface in each mounting groove, wherein the metal base covers the bottom surfaces of the mounting grooves; a first heat insulation belt and a second heat insulation belt which are integrally connected are respectively arranged at the upper edge and the lower edge of the double-wafer cantilever beam array, and the first heat insulation belt and the second heat insulation belt are along the y axis; the lower edge of the second heat insulation belt is provided with a metal surface which is connected into a whole; the first heat insulation belt, the double-wafer cantilever beam array, the second heat insulation belt and the metal surface are connected into a whole and are positioned on the same plane to form a tunable plane; correspondingly setting a tunable plane in each mounting groove, wherein the tunable plane is fixed on the edge of the upper side wall of the mounting groove through a first heat insulation belt, and the twin-wafer cantilever beam array is bent after being heated by applying bias voltage to drive the whole tunable plane to rotate by a set angle by taking the first heat insulation belt as a shaft, the angle of the rotating shaft is in direct proportion to the bias voltage applied by an external power supply along the y axis, and the higher the bias voltage is, the larger the rotating angle of the tunable plane is; the outer edge of the substrate is larger than the openings at the bottoms of the first cascade waveguide and the second cascade waveguide, and the outer edge of the substrate is fixed outside the bottoms of the first cascade waveguide and the second cascade waveguide; the area of the tunable plane is not more than that of the mounting groove, the area of the opening is not less than that of the mounting groove, and the two tunable planes are respectively positioned in the first cascade waveguide and the second cascade waveguide through the corresponding openings; a power port and a ground port are arranged on the substrate, and the two bimorph cantilever beam arrays are respectively connected to the corresponding power port and the corresponding ground port through metal wires; an external power supply is connected to the power supply port and the ground port, and the energy of the external power supply is input into the bimorph cantilever beam array from the power supply port and then output from the ground port, so that bias voltage is applied to the bimorph cantilever beam array;
the first rectangular waveguide, the second rectangular waveguide, the third rectangular waveguide, the fourth rectangular waveguide and the fourth rectangular waveguide are equivalent to each other, terahertz waves incident from the first rectangular waveguide are divided into two paths with the same amplitude and 90-degree phase difference from the first coupled waveguide to the first cascaded waveguide and the second cascaded waveguide through the first coupled waveguide, two paths of terahertz waves are respectively transmitted into the first and second cascaded waveguides, tunable planes respectively positioned in the first and second cascaded waveguides are equivalent to ideal conductors, terahertz waves incident on the tunable planes are reflected back to the first coupled waveguide by the tunable planes, and terahertz waves which do not enter the tunable planes are transmitted to the second coupled waveguide through a gap between the tunable planes and the top of the cascaded waveguides; the size of a gap between the tunable plane and the top of the cascade waveguide is controlled by simultaneously adjusting the angle of the tunable plane in the first cascade waveguide and the angle of the tunable plane in the second cascade waveguide, so that the power of reflected or transmitted terahertz waves is controlled; an external power supply loads bias voltage to the double-wafer cantilever beam array through a power supply port and a ground port to heat the double-wafer cantilever beam array, and the double-wafer cantilever beam array bends due to heating, so that the double-wafer cantilever beam array rotates around the y axis, and the tunable plane is driven to rotate around the y axis; by adjusting the magnitude of the bias voltage loaded to the double-wafer cantilever beam array and adjusting the two tunable planes to rotate by the same angle around the y axis, the power of the terahertz waves reflected or transmitted at the tunable planes is adjusted; two paths of terahertz waves reflected to the first coupling waveguide from the first and second cascade waveguides are combined into one path according to the phase superposition principle and then output from the second rectangular waveguide; two paths of terahertz waves transmitted from the first coupling waveguide and the second coupling waveguide to the second coupling waveguide are combined into one path by virtue of a phase superposition principle and then output from the third rectangular waveguide, wherein the fourth rectangular waveguide has no power output theoretically, so that the effect of port impedance matching is realized; therefore, the power of the terahertz wave reflected or transmitted in the first and second cascade waveguides is controlled through the MEMS angle actuator, and the function of adjusting the output power of the terahertz waveguide power divider is realized.
2. The terahertz MEMS reconfigurable power divider of claim 1, wherein the substrate of the MEMS angle actuator is one of silicon, silicon nitride, silicon carbide and gallium arsenide.
3. The terahertz MEMS reconfigurable power divider of claim 1, wherein the first through fourth rectangular waveguides, the first and second coupling waveguides, and the first and second cascade waveguides are made of a high conductivity material.
4. The terahertz MEMS reconfigurable power divider of claim 1, wherein the material of the first and second thermal isolation strips is one of silicon dioxide, silicon nitride and polysilicon.
5. The terahertz MEMS reconfigurable power divider of claim 1, wherein the bimorph cantilever beam array comprises a plurality of bimorph cantilever beams, each cantilever beam comprises an upper layer and a lower layer, and the upper layer and the lower layer are made of materials with different thermal expansion coefficients.
6. The terahertz MEMS reconfigurable power divider of claim 1, wherein the metal surface is made of one of aluminum, copper, silver, nickel and gold.
7. The terahertz MEMS reconfigurable power divider of claim 1, wherein the power port, the ground port and the metal wire are all conductive metals; the metal substrate is made of one of aluminum, copper, silver, nickel and gold.
8. The terahertz MEMS reconfigurable power divider as claimed in claim 1, wherein when the angle of the tunable plane of the MEMS angle actuator is changed within 0-50 °, the power of the output port of the terahertz waveguide power divider can be adjusted within the range of 0.25% -95% of the input power; meanwhile, the output power ratio of the terahertz waveguide power divider is adjustable between-26 dB and 26 dB; when the angle of the tunable plane of the MEMS angle actuator is 25 degrees, the terahertz waveguide power divider has the function of a terahertz equal-division power divider; when the angle of the tunable plane of the MEMS angle actuator is 12 degrees, the terahertz waveguide power divider has the function of a terahertz 10dB coupler; when the angle of the tunable plane of the MEMS angle actuator is switched between 0 degree and 50 degrees, the terahertz waveguide power divider has the terahertz switching function.
9. The implementation method of the terahertz MEMS reconfigurable power divider as claimed in claim 1, wherein the implementation method comprises the following steps:
1) the first rectangular waveguide, the second rectangular waveguide, the third rectangular waveguide, the fourth rectangular waveguide and the fourth rectangular waveguide are equivalent to each other, and terahertz waves incident from the first rectangular waveguide are divided into two paths with the same amplitude and 90-degree phase difference from the first coupling waveguide to the first cascade waveguide and the second cascade waveguide;
2) the two paths of terahertz waves are respectively transmitted into the first cascade waveguide and the second cascade waveguide, tunable planes respectively positioned on the first cascade waveguide and the second cascade waveguide are equivalent to ideal conductors, terahertz waves incident on the tunable planes are reflected to the first coupling waveguide by the tunable planes, and terahertz waves which are not incident on the tunable planes are transmitted to the second coupling waveguide through a gap between the tunable planes and the top of the cascade waveguides;
3) the size of a gap between the tunable plane and the top of the cascade waveguide is controlled by simultaneously adjusting the angle of the tunable plane in the first cascade waveguide and the angle of the tunable plane in the second cascade waveguide, so that the power of reflected or transmitted terahertz waves is controlled;
4) an external power supply loads bias voltage to the double-wafer cantilever beam array through a power supply port and a ground port to heat the double-wafer cantilever beam array, and the double-wafer cantilever beam array bends due to heating, so that the double-wafer cantilever beam array rotates around the y axis, and the tunable plane is driven to rotate around the y axis;
5) by adjusting the magnitude of the bias voltage loaded to the double-wafer cantilever beam array and adjusting the two tunable planes to rotate by the same angle around the y axis, the power of the terahertz waves reflected or transmitted at the tunable planes is adjusted;
6) two paths of terahertz waves reflected to the first coupling waveguide from the first and second cascade waveguides are combined into one path according to the phase superposition principle and then output from the second rectangular waveguide; two paths of terahertz waves transmitted from the first coupling waveguide and the second coupling waveguide to the second coupling waveguide are combined into one path by virtue of a phase superposition principle and then output from the third rectangular waveguide, wherein the fourth rectangular waveguide has no power output theoretically, so that the effect of port impedance matching is realized; therefore, the power of the terahertz wave reflected or transmitted in the first and second cascade waveguides is controlled through the MEMS angle actuator, and the function of adjusting the output power of the terahertz waveguide power divider is realized.
10. The implementation method of claim 9, wherein in step 5, when the angle of the tunable plane of the MEMS angle actuator is changed from 0 ° to 50 °, the power of the output port of the terahertz waveguide power divider can be adjusted within a range of 0.25% to 95% of the input power; meanwhile, the output power ratio of the terahertz waveguide power divider is adjustable between-26 dB and 26 dB; when the angle of the tunable plane of the MEMS angle actuator is 25 degrees, the terahertz waveguide power divider has the function of a terahertz equal-division power divider; when the angle of the tunable plane of the MEMS angle actuator is 12 degrees, the terahertz waveguide power divider has the function of a terahertz 10dB coupler; when the angle of the tunable plane of the MEMS angle actuator is switched between 0 degree and 50 degrees, the terahertz waveguide power divider has the terahertz switching function.
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