CN114388323A - Electrostatic chuck and plasma processing device thereof - Google Patents
Electrostatic chuck and plasma processing device thereof Download PDFInfo
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- CN114388323A CN114388323A CN202011124572.2A CN202011124572A CN114388323A CN 114388323 A CN114388323 A CN 114388323A CN 202011124572 A CN202011124572 A CN 202011124572A CN 114388323 A CN114388323 A CN 114388323A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 120
- 239000002184 metal Substances 0.000 claims abstract description 120
- 238000001179 sorption measurement Methods 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 30
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 153
- 238000001816 cooling Methods 0.000 claims description 43
- 239000010948 rhodium Substances 0.000 claims description 26
- 239000010936 titanium Substances 0.000 claims description 26
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 20
- 229910052735 hafnium Inorganic materials 0.000 claims description 20
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 20
- 239000011733 molybdenum Substances 0.000 claims description 20
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 20
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 20
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 20
- 239000010937 tungsten Substances 0.000 claims description 20
- 229910052750 molybdenum Inorganic materials 0.000 claims description 19
- 229910052703 rhodium Inorganic materials 0.000 claims description 19
- 229910052716 thallium Inorganic materials 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- 229910052721 tungsten Inorganic materials 0.000 claims description 19
- 229910000792 Monel Inorganic materials 0.000 claims description 14
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 14
- 229910000856 hastalloy Inorganic materials 0.000 claims description 13
- 229910052726 zirconium Inorganic materials 0.000 claims description 13
- 238000005524 ceramic coating Methods 0.000 claims description 7
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 5
- 239000012790 adhesive layer Substances 0.000 claims description 2
- 239000012809 cooling fluid Substances 0.000 claims description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 4
- 238000000034 method Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000000110 cooling liquid Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910000629 Rh alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910001007 Tl alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 210000002304 esc Anatomy 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Treatment Of Fiber Materials (AREA)
Abstract
The invention discloses an electrostatic chuck, which comprises an electrostatic adsorption layer and a base positioned below the electrostatic adsorption layer, wherein the electrostatic adsorption layer is made of ceramic materials, the base comprises a first metal layer close to the electrostatic adsorption layer and a second metal layer positioned below the first metal layer, the thermal expansion coefficient of the first metal layer is larger than that of the electrostatic adsorption layer and is less than or equal to that of the second metal layer, and the thermal expansion coefficient of the first metal layer is less than 15 multiplied by 10‑6and/K. The invention solves the problem that the traditional electrostatic chuck is easy to generate mechanical stress to cause damage, selects special materials with similar thermal expansion coefficients of the ESC base and the electrostatic adsorption layer, reduces the generation of the mechanical stress in the electrostatic chuck and effectively avoids the phenomenon of thermal mismatch in the electrostatic chuck.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an electrostatic chuck and a plasma processing device thereof.
Background
In the field of semiconductor technology, plasma etching is one of the most important techniques in semiconductor processing. Plasma etching is used to achieve the pattern replication of a mask to a substrate material by transferring a pattern (pattern) etch on a pattern layer of a photolithographic process to the substrate material, either chemically or physically, or physically assisted by the chemical etch.
Among them, an electrostatic chuck (ESC) is one of the most critical components in a plasma etching process. The development and application diversity of semiconductor technology requires ESCs that can accommodate conditions such as wider temperature ranges, higher power, higher voltage, and wider rf frequency ranges.
However, these harsh conditions cause significant increases in mechanical and electrical stresses within the ESC, and failure to properly handle the resulting stresses can result in damage to the ESC. For example, the ESC at low or high temperatures has a large temperature difference from the bonding temperature or room temperature to the application temperature, which easily causes a phenomenon of a severe thermal mismatch between the substrate of the ESC and the electrostatic adsorption layer, and in turn, a crack of the electrostatic adsorption layer. Meanwhile, damage to the ESC will directly cause malfunction of the plasma etching apparatus.
Disclosure of Invention
The invention aims to provide an electrostatic chuck and a plasma processing device thereof, which are used for solving the problem that the traditional electrostatic chuck is easy to damage due to mechanical stress.
To achieve the above object, the present invention provides an electrostatic chuck including an electrostatic adsorption layer and a base under the electrostatic adsorption layer, wherein the electrostatic adsorption layer is made of a ceramic material, the base includes a first metal layer close to the electrostatic adsorption layer and a second metal layer under the first metal layer, and a thermal expansion coefficient of the first metal layer is greater than a thermal expansion coefficient of the electrostatic adsorption layerCoefficient of thermal expansion of the second metal layer or less, and coefficient of thermal expansion of the first metal layer less than 15 × 10-6/K。
In the above electrostatic chuck, the base further includes a third metal layer disposed below the second metal layer, and a thermal expansion coefficient of the third metal layer is greater than or equal to a thermal expansion coefficient of the second metal layer.
The electrostatic chuck is characterized in that the material of the first metal layer is at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium, hastelloy and monel alloy, or at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten and zirconium.
The electrostatic chuck is characterized in that the material of the second metal layer is at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium, hastelloy and monel alloy, or at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten and zirconium.
The electrostatic chuck is characterized in that the material of the third metal layer is at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium, hastelloy and monel alloy, or at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten and zirconium.
In the above electrostatic chuck, a thermal expansion coefficient of the first metal layer is less than or equal to 1.3 times a thermal expansion coefficient of the electrostatic absorption layer.
The electrostatic chuck is characterized in that the working environment temperature of the electrostatic chuck is 50 ℃ to-180 ℃.
The electrostatic chuck is characterized in that the working environment temperature of the electrostatic chuck is 0 ℃ to 300 ℃.
In the above electrostatic chuck, the first metal layer and the second metal layer have a ceramic coating on the sidewall surface.
In the above electrostatic chuck, the base is provided therein with a cooling channel, and the cooling channel is located in the first metal layer or the second metal layer or between the first metal layer and the second metal layer.
In the electrostatic chuck, the fin structure is arranged in the cooling channel, the fin structure is a protrusion extending from the first metal layer and/or the second metal layer into the cooling channel, and the protrusion is used for increasing the contact area between the base and the cooling liquid, so as to increase the heat conduction of the base.
In the above electrostatic chuck, the number of the fin structures in each cooling channel is at least one.
In the above electrostatic chuck, the fin structure is disposed at the bottom of the cooling channel.
In the above electrostatic chuck, the fin structure is disposed at a top end of the cooling channel.
In the above electrostatic chuck, a cross section of the fin structure is rectangular.
In the above electrostatic chuck, a cross section of the fin structure is corrugated.
The electrostatic chuck is characterized in that the electrostatic adsorption layer and the base are bonded together through an adhesive layer.
The invention also provides a plasma processing device which comprises the electrostatic chuck.
By applying the invention, the problem that the traditional electrostatic chuck is easy to generate mechanical stress to cause damage is solved, and the special material with similar thermal expansion coefficient between the ESC base and the electrostatic adsorption layer is selected, so that the generation of the mechanical stress in the electrostatic chuck is reduced, and the phenomenon of thermal mismatch in the electrostatic chuck is effectively avoided.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the electrostatic chuck provided by the invention, multiple layers of metals with different thermal expansion coefficients are stacked to form the base, so that the mechanical stress caused by the mismatching of the thermal expansion coefficients between the adjacent metal layers is controlled, the warping is reduced, the phenomenon of irregular mechanical properties such as flatness and parallelism caused by warping is avoided, and the safety coefficient of the electrostatic chuck is improved.
2. According to the electrostatic chuck provided by the invention, the thermal expansion coefficient of the first metal layer material close to the base of the ceramic electrostatic adsorption layer is close to that of the electrostatic adsorption layer, so that the electrostatic chuck can adapt to a working environment with larger temperature difference, and the electrostatic chuck is prevented from being broken due to overlarge difference of expansion with heat and contraction with cold of different materials.
3. According to the electrostatic chuck provided by the invention, the fin type protrusion structure extending inwards is arranged in the cooling channel, so that the contact area between the base and cooling liquid is effectively increased, and the heat conduction efficiency of the base is improved.
4. According to the electrostatic chuck provided by the invention, different metal materials are stacked as the base, so that the material cost for manufacturing the base can be effectively saved, and the manufacturing process of the base is greatly simplified.
Drawings
Fig. 1 is a schematic structural diagram of an electrostatic chuck according to example 1 of the present invention;
fig. 2 is a schematic cross-sectional view of a cooling channel and a fin structure in the embodiment 1 provided in the present invention;
FIG. 3 is a schematic cross-sectional view of a cooling channel and a fin structure according to another embodiment 2 of the present invention;
FIG. 4 is a schematic cross-sectional view of a cooling channel and a fin structure according to another embodiment 3 of the present invention;
fig. 5 is a schematic structural diagram of a plasma processing apparatus according to the present invention.
Detailed Description
The invention will be further described by the following specific examples in conjunction with the drawings, which are provided for illustration only and are not intended to limit the scope of the invention.
The electrostatic chuck is a very important component of a vacuum processing apparatus for supporting a substrate w to be processed and adjusting parameters such as an electric field, temperature, etc. in a reaction chamber during a process. Currently, as integrated circuit processes are developed, the temperature adjustment range of the electrostatic chuck is increased, for example, in an ultra-low temperature etching process, the operating temperature of the electrostatic chuck can reach 150 degrees below zero, or even 180 degrees below zero, which is more than two hundred degrees compared with the temperature before the electrostatic chuck is operated and the normal temperature during storage.
The present invention is an electrostatic chuck, as shown in fig. 1, comprising an electrostatic adsorption layer 1 formed of a dielectric material and a metal base 2, and because the thermal expansion coefficients of the dielectric material and the aluminum metal material are different, the large temperature difference working environment puts high demands on the safety of the electrostatic chuck.
Wherein, the upper part of the electrostatic adsorption layer 1 is used for bearing a substrate w to be processed; the susceptor 2 is located below the electrostatic adsorption layer 1. The electrostatic adsorption layer 1 is made of ceramic material; in this embodiment, the ceramic material of the electrostatic adsorption layer 1 is aluminum oxide or aluminum nitride; in another embodiment, the ceramic material of the electrostatic adsorption layer 1 is at least one of sapphire, yttria, zirconia, silicon carbide, silicon nitride, or tungsten carbide; the selection of these ceramic materials is related to the environment and chemistry in which the electrostatic chuck is used.
Referring to fig. 1, the base 2 includes a first metal layer 201 adjacent to the electrostatic adsorption layer 1 and a second metal layer 202 located below the first metal layer 201, the first metal layer 201 has a thermal expansion coefficient greater than that of the electrostatic adsorption layer 1 and less than or equal to that of the second metal layer 202, and the first metal layer 201 has a thermal expansion coefficient less than 15 × 10-6And the base 2 is formed by stacking metal materials with different thermal expansion coefficients, so that the material cost of the base 2 is reduced, and the manufacturing process is simplified.
Optionally, the base 2 further includes a third metal layer 203 disposed below the second metal layer 202, and a thermal expansion coefficient of the third metal layer 203 is greater than or equal to a thermal expansion coefficient of the second metal layer 202.
Because the thermal expansion coefficient of the first metal layer 201 of the base 2 close to the electrostatic adsorption layer 1 is greater than that of the electrostatic adsorption layer 1 and is less than that of the second metal layer 202, the mechanical stress caused by the mismatch of the thermal expansion coefficients between the adjacent material layers can be effectively controlled, the warping of the base 2 is reduced, and the phenomenon that the base 2 is irregular in mechanical properties such as flatness and parallelism caused by the warping of the base 2 is avoided, so that the safety factor of the electrostatic chuck is improved.
In this embodiment, the working environment temperature of the electrostatic chuck is-180 ℃ to 50 ℃; in another embodiment, the operating environment temperature of the electrostatic chuck is 0 ℃ to 300 ℃.
Since the base 2 needs to be connectedThe RF power source couples RF signals into the reaction chamber, so the material of the susceptor 2 is usually selected from metal materials. In the present invention, in order to make the thermal expansion coefficients of the ceramic materials of the first metal layer 201 and the electrostatic adsorption layer 1 close to each other, optionally, the thermal expansion coefficient of the first metal layer 201 is less than or equal to 1.3 times of the thermal expansion coefficient of the electrostatic adsorption layer 1, and the thermal expansion coefficient of the first metal layer 201 is set to be less than 15 × 10-6/K。
The material of the first metal layer 201 is at least one of copper (Cu), hafnium (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), zirconium (Zr), sapphire, Yttrium Aluminum Garnet (YAG), silicon carbide alloy (Al-SiC), Hastelloy (Hastelloy), 304/316 type Stainless Steel (SS), Monel (Monel), or at least one of hafnium (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), and zirconium (Zr).
The material of the second metal layer 202 is one of aluminum (Al), copper (Cu), hafnium (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), zirconium (Zr), sapphire, Yttrium Aluminum Garnet (YAG), and silicon carbide alloy (Al-SiC), Hastelloy (Hastelloy), Stainless Steel (SS) model 304/316, Monel (Monel), or at least one of respective metal alloys of hafnium (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), and zirconium (Zr). The material of the base is selected to ensure that the coefficient of thermal expansion of the first metal layer is less than the coefficient of thermal expansion of the second metal layer.
The material of the third metal layer 203 is at least one of hafnium (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), zirconium (Zr), Hastelloy (Hastelloy), Monel (Monel), or at least one of each of hafnium (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), and zirconium (Zr).
In this embodiment 1, the material of the first metal layer 201 and the second metal layer 202 is one or more of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, and zirconium.
In another embodiment 2, the material of the first metal layer 201 and the second metal layer 202 is one or more of various metal alloys of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, and zirconium.
In another embodiment 3, the material of the first metal layer 201 and the second metal layer 202 is one or two of hastelloy and Monel (Monel).
These metal materials having different thermal expansion coefficients and thermal conductivities can effectively adapt to the working environment of the electrostatic chuck at low temperature (the working environment temperature is-180 ℃ to 50 ℃) or high temperature (the working environment temperature is 0 ℃ to 200 ℃).
In the plasma etching process, the electrostatic chuck is placed inside the plasma reaction chamber for clamping the substrate w to be processed, and during the etching operation, the sidewall of the electrostatic chuck is exposed on the surface of the plasma gas source and is easily etched by the plasma gas source or corroded by the chemical gas, therefore, referring to fig. 1, the sidewall surfaces of the first metal layer 201 and the second metal layer 202 are coated with the ceramic coating to protect the sidewall of the electrostatic chuck from the corrosion of the chemical gas and the arc discharge, since the thermal expansion coefficient of the first metal layer 201 is close to that of the ceramic material, even if the temperature of the electrostatic chuck is greatly changed after the ceramic coating is coated on the sidewall surface of the first metal layer 201, the first metal layer 201 does not greatly deform with the ceramic coating, so that the ceramic coating is broken and falls off, and since the first metal layer 201 is closer to the plasma environment, the plasma bombardment risk possibly generated by the falling of the side wall ceramic coating can be effectively avoided.
Referring to fig. 1, a cooling channel 4 is provided inside the susceptor 2 for introducing a cooling fluid inside the cooling channel 4 to cool the susceptor 2; and the cooling channel 4 is located in the first metal layer 201 or in the second metal layer 202 or penetrates through the first metal layer 201 and the second metal layer 202. The material of the base 2 should be selected in consideration of the thermal expansion coefficient and the thermal conductivity coefficient, and the material with the thermal conductivity coefficient may be selected according to the requirement of the thermal conductivity rate of different processes. For example, in a process requiring rapid temperature adjustment of the electrostatic chuck, the material of the first metal layer 201 and/or the second metal layer 202 of the susceptor 2 having a higher thermal conductivity may be selected from the above listed materials, and when the temperature of the electrostatic chuck needs to be adjusted slowly, the material of the first metal layer 201 and/or the second metal layer 202 of the susceptor having a lower thermal conductivity may be selected from the above listed materials.
Referring to fig. 2, in order to increase the temperature adjustment speed of the susceptor 2, a fin structure 5 is disposed in the cooling channel 4, and the fin structure 5 is a protrusion of the first metal layer 201 and/or the second metal layer 202 extending into the cooling channel 4; wherein, the fin structure 5 is arranged inside the cooling channel 4 to increase the contact area between the cooling liquid inside the cooling channel 4 and the base 2, thereby increasing the heat conduction of the base 2. Wherein, the number of the fin structures 5 in each cooling channel 4 is at least one.
In the present embodiment 1, referring to fig. 2, the cooling channel 4 is located in the second metal layer 202 inside the susceptor 2, and the fin structure 5 is disposed at the bottom of the cooling channel 4, and the cross section of the fin structure is rectangular.
In another embodiment 2, referring to fig. 3, the cooling channel 4 is located in the first metal layer 201 inside the susceptor 2, and the fin structure 5 is disposed at the bottom end of the cooling channel 4, and the cross section of the fin structure 5 is corrugated for increasing the contact area between the susceptor 2 and the cooling liquid, thereby increasing the heat conduction rate of the susceptor 2.
In another embodiment 3, referring to fig. 4, the cooling channel 4 penetrates through the first metal layer 201 and the second metal layer 202 inside the susceptor 2, and the installation area of the cooling channel 4 is increased, so that the contact area between the susceptor 2 and the cooling liquid inside the cooling channel 4 can be effectively increased, and the heat conduction of the susceptor 2 can be further increased.
In other embodiments, if the base 2 includes more than two metal layers, the cooling channel 4 may be disposed in other metal layers besides the first metal layer 201 and the second metal layer 202, and correspondingly, the fin structure 5 is disposed on the metal layer below and/or above the cooling channel 4.
Referring to fig. 4, the fin structure 5 is disposed at the bottom end of the cooling channel 4, and the cross section of the fin structure 5 is corrugated for increasing the contact area between the susceptor 2 and the cooling liquid, thereby increasing the heat conduction of the susceptor 2.
The fin structure 5 can be modified in various ways, for example, only part of the fin structure 5 can be arranged in the cooling channel 4 in the central region or the peripheral region of the base 2 to realize rapid temperature conduction in local regions; alternatively, in another embodiment, part of the fin structure 5 is connected to the metal layer above the cooling channel 4, and part of the fin structure 5 is connected to the metal layer below the cooling channel 4, so as to achieve different heat conduction effects.
The present invention also provides a plasma processing apparatus, as shown in fig. 5, which includes a reaction chamber 6, a plasma gas source 7, a Radio Frequency (RF) power supply 8, and the above-mentioned electrostatic chuck; the plasma gas source 7 is arranged above the reaction cavity 6 and used for introducing plasma into the reaction cavity 6; the electrostatic chuck is arranged in the reaction cavity 6, and an electrode is embedded in the electrostatic adsorption layer 1 of the electrostatic chuck and is used for clamping a substrate w to be processed when current is applied in the etching process; the radio frequency power supply 8 is connected with the metal base 2 of the electrostatic chuck and transmits the radio frequency power supply to the reaction cavity 6 through the conductive metal base 2; the electrostatic adsorption layer 1 and the base 2 are bonded together through the bonding layer 3.
The electrostatic chuck is internally provided with a helium channel 9, the helium channel 9 extends to a position between the electrostatic adsorption layer 1 and the substrate w to be processed through the base 2, and the helium channel is used for introducing helium to act on the back of the substrate w to be processed in the plasma etching process so as to accelerate heat conduction between the substrate w to be processed and the electrostatic adsorption layer 1 and control the temperature of the substrate w to be processed. The cooling channel 4 provided inside the susceptor 2 in the electrostatic chuck realizes the temperature control of the susceptor 2 by heat exchange with the cooling liquid.
The working principle of the invention is as follows:
an electrostatic chuck includes an electrostatic adsorption layer and a susceptor below the electrostatic adsorption layer; the base comprises a first metal layer close to the electrostatic adsorption layer, a second metal layer below the first metal layer, and a third metal layer below the second metal layer, wherein the thermal expansion coefficient of the first metal layer is greater than that of the electrostatic adsorption layer and less than or equal to that of the second metal layer, and the thermal expansion coefficient of the first metal layer is less than 15 multiplied by 10-6K; third metalThe thermal expansion coefficient of the layer is larger than or equal to that of the second metal layer, so that the mechanical stress caused by the mismatching of the thermal expansion coefficients of the adjacent metal layers is effectively controlled, and the safety coefficient of the electrostatic chuck is improved; a cooling channel is arranged in the base; the fin structure is arranged in the cooling channel and is a protrusion extending from the first metal layer and/or the second metal layer to the inside of the cooling channel and used for increasing the contact area of the base and cooling liquid and further increasing the heat conduction of the base.
In summary, the electrostatic chuck and the plasma processing apparatus thereof of the present invention solve the problem of damage caused by mechanical stress easily generated in the conventional electrostatic chuck, and select a special material with similar thermal expansion coefficient between the ESC base and the electrostatic adsorption layer, thereby reducing the generation of mechanical stress in the electrostatic chuck, effectively avoiding the phenomenon of thermal mismatch in the electrostatic chuck, and being particularly suitable for the plasma processing apparatus with large process temperature difference.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (18)
1. An electrostatic chuck comprises an electrostatic adsorption layer and a base positioned below the electrostatic adsorption layer, and is characterized in that the electrostatic adsorption layer is made of ceramic materials, the base comprises a first metal layer close to the electrostatic adsorption layer and a second metal layer positioned below the first metal layer, the thermal expansion coefficient of the first metal layer is larger than that of the electrostatic adsorption layer and smaller than or equal to that of the second metal layer, and the thermal expansion coefficient of the first metal layer is smaller than 15 multiplied by 10-6/K。
2. The electrostatic chuck of claim 1, wherein the pedestal further comprises a third metal layer disposed below the second metal layer, the third metal layer having a coefficient of thermal expansion greater than or equal to a coefficient of thermal expansion of the second metal layer.
3. The electrostatic chuck of any of claims 1 or 2, wherein the material of the first metal layer is at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium, hastelloy, monel, or at least one of the respective metal alloys of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium.
4. The electrostatic chuck of any of claims 1 or 2, wherein the material of the second metal layer is at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium, hastelloy, monel, or at least one of the respective metal alloys of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium.
5. The electrostatic chuck of claim 2, wherein the material of the third metal layer is at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium, hastelloy, monel, or at least one of the respective metal alloys of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium.
6. The electrostatic chuck of claim 1, wherein a coefficient of thermal expansion of the first metal layer is less than or equal to 1.3 times a coefficient of thermal expansion of the electrostatic chuck layer.
7. The electrostatic chuck of claim 1, wherein a working ambient temperature of the electrostatic chuck is between 50 ℃ and-180 ℃.
8. The electrostatic chuck of claim 1, wherein a working ambient temperature of the electrostatic chuck is 0 ℃ to 300 ℃.
9. The electrostatic chuck of claim 1, wherein the sidewall surfaces of the first and second metal layers are coated with a ceramic coating.
10. The electrostatic chuck of claim 1, wherein the base has cooling channels disposed therein, the cooling channels being located within the first metal layer or the second metal layer or between the first metal layer and the second metal layer.
11. The electrostatic chuck of claim 10, wherein a fin structure is disposed in the cooling channel, the fin structure being a protrusion of the first metal layer and/or the second metal layer extending into the cooling channel, the protrusion configured to increase a contact area of the pedestal with a cooling fluid, thereby increasing a thermal conductivity of the pedestal.
12. The electrostatic chuck of claim 11, wherein the number of fin structures within each cooling channel is at least one.
13. The electrostatic chuck of claim 11, wherein the fin structure is disposed at a bottom of the cooling channel.
14. The electrostatic chuck of claim 11, wherein the fin structure is disposed at a top end of the cooling channel.
15. The electrostatic chuck of claim 11, wherein the fin structure is rectangular in cross-section.
16. The electrostatic chuck of claim 11, wherein a cross-section of the fin structure is corrugated.
17. The electrostatic chuck of claim 1, wherein the electrostatic clamping layer and the pedestal are bonded together by an adhesive layer.
18. A plasma processing apparatus, characterized in that the plasma processing apparatus comprises an electrostatic chuck according to any one of claims 1-17.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011124572.2A CN114388323A (en) | 2020-10-20 | 2020-10-20 | Electrostatic chuck and plasma processing device thereof |
| TW110129046A TWI795861B (en) | 2020-10-20 | 2021-08-06 | Electrostatic Chuck and Its Plasma Treatment Device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011124572.2A CN114388323A (en) | 2020-10-20 | 2020-10-20 | Electrostatic chuck and plasma processing device thereof |
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| CN114388323A true CN114388323A (en) | 2022-04-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202011124572.2A Pending CN114388323A (en) | 2020-10-20 | 2020-10-20 | Electrostatic chuck and plasma processing device thereof |
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|---|---|
| CN (1) | CN114388323A (en) |
| TW (1) | TWI795861B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116978852A (en) * | 2023-09-15 | 2023-10-31 | 江苏鲁汶仪器股份有限公司 | Electrostatic chuck and mounting base thereof |
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| JPH1041377A (en) * | 1996-07-22 | 1998-02-13 | Nhk Spring Co Ltd | Electrostatic chuck |
| CN106796901A (en) * | 2014-08-26 | 2017-05-31 | Asml控股股份有限公司 | Electrostatic chuck and its manufacture method |
| CN107646136A (en) * | 2015-05-19 | 2018-01-30 | 应用材料公司 | The electrostatic positioning disk component with metal combination backboard for high-temperature process |
| CN213546260U (en) * | 2020-10-20 | 2021-06-25 | 中微半导体设备(上海)股份有限公司 | Electrostatic chuck and plasma processing device thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7544251B2 (en) * | 2004-10-07 | 2009-06-09 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
| CN103794445B (en) * | 2012-10-29 | 2016-03-16 | 中微半导体设备(上海)有限公司 | For electrostatic chuck assembly and the manufacture method of plasma process chamber |
| CN107527851B (en) * | 2016-06-20 | 2023-09-01 | 北京华卓精科科技股份有限公司 | Ceramic electrostatic chuck device and preparation process thereof |
| JP7329917B2 (en) * | 2018-11-30 | 2023-08-21 | 新光電気工業株式会社 | Substrate fixing device |
| WO2020185467A1 (en) * | 2019-03-08 | 2020-09-17 | Lam Research Corporation | Chuck for plasma processing chamber |
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2020
- 2020-10-20 CN CN202011124572.2A patent/CN114388323A/en active Pending
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- 2021-08-06 TW TW110129046A patent/TWI795861B/en active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1041377A (en) * | 1996-07-22 | 1998-02-13 | Nhk Spring Co Ltd | Electrostatic chuck |
| CN106796901A (en) * | 2014-08-26 | 2017-05-31 | Asml控股股份有限公司 | Electrostatic chuck and its manufacture method |
| CN107646136A (en) * | 2015-05-19 | 2018-01-30 | 应用材料公司 | The electrostatic positioning disk component with metal combination backboard for high-temperature process |
| CN213546260U (en) * | 2020-10-20 | 2021-06-25 | 中微半导体设备(上海)股份有限公司 | Electrostatic chuck and plasma processing device thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116978852A (en) * | 2023-09-15 | 2023-10-31 | 江苏鲁汶仪器股份有限公司 | Electrostatic chuck and mounting base thereof |
| CN116978852B (en) * | 2023-09-15 | 2023-12-08 | 江苏鲁汶仪器股份有限公司 | Electrostatic chuck and mounting base thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202216437A (en) | 2022-05-01 |
| TWI795861B (en) | 2023-03-11 |
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