CN1143749A - Semiconductor acceleration sensor - Google Patents

Semiconductor acceleration sensor Download PDF

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Publication number
CN1143749A
CN1143749A CN 95116390 CN95116390A CN1143749A CN 1143749 A CN1143749 A CN 1143749A CN 95116390 CN95116390 CN 95116390 CN 95116390 A CN95116390 A CN 95116390A CN 1143749 A CN1143749 A CN 1143749A
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CN
China
Prior art keywords
mentioned
cantilever
semiconductor
substrate
diffusion resistance
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Pending
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CN 95116390
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Chinese (zh)
Inventor
M·筱木
Y·斋藤
Y·吉田
H·原田
K·加藤
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Seiko Instruments Inc
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Seiko Instruments Inc
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Priority to CN 95116390 priority Critical patent/CN1143749A/en
Publication of CN1143749A publication Critical patent/CN1143749A/en
Pending legal-status Critical Current

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Abstract

The semiconductor device is arranged so diffused resistors are provided in the vicinity of a cantilever of a semiconductor substrate whose one end is supported, a thickness of the diffused resistor section is equalized with a thickness of the cantilever, the cantilever is provided with an amplifying function and a trimming function and each component can be readily bonded. Semiconductor elements can be fabricated simply by cutting out of a semiconductor substrate by means of dicing or the like, allowing to obtain elements at low manufacturing cost. Because the supporting base and the element are fabricated separately, the manufacturing process can be easily, the steps can be reduced and the yield can be improved.

Description

Semiconductor acceleration sensor
The present invention relates to a kind of semiconductor devices, relate in particular to the piezoresistive effect that utilizes semiconductor crystal such as silicon crystal and make displacement conversion become a kind of acceleration transducer and the pressure transducer of electric signal.
Along with the recent development of microcomputer process technology, utilizing formation and etch thin film to form semiconductor acceleration sensor on Semiconductor substrate has become possibility.A kind ofly typically be described in for example L.M.ROYLANCE with the acceleration transducer of microcomputer processing and manufacturing, in the article of J.B.Angell, IEEE, electron device proceedings, ED-26 volume, in Dec, 1979 the 12nd phase.The microcomputer machine component makes the diffusion resistance thickness attenuation partly that detects displacement with chemical method, is beneficial to its displacement.According to Jap.P. open file No.Hei 1-302167, wherein say, make the active component attenuation of diffusion by isotropic etching, be used to improve its sensitivity.Fig. 6 represents a kind of example of semiconductor acceleration sensor of prior art.This prior art example needs a diaphragm 21 to protect surface wiring, so that make the attenuation of diffusion resistance part by isotropic etching.
In addition, damage, shown in Figure 70, used the catch 1008 and 1009 of restrained deformation for the part that prevents to approach.
The technology of the semiconductor pressure sensor of prior art below will be described.Known so far a kind of semiconductor pressure sensor wherein connected a substrate 702 that silicon is done as shown in figure 34 on the substrate 705 that glass is done, and substrate 702 is connected with terminal 907 by lead 709.A kind of like this structure example is as being disclosed on " Electronics " 29,6 (1984) 17.In this prior art example, be provided with a pressure reference chamber and on this chamber, formed a diaphragm 704.
In addition, having its side is that the micropressure sensor of the square diaphragm of 80 μ m utilizes that the microcomputer processing technology is tested to be made.The feature of this pressure transducer is that mainly diaphragm 704 and pressure reference chamber form with etching from the surface of silicon substrate 702.Figure 35 represents the sketch plan with the cross-section structure of the pressure transducer of microcomputer processing and manufacturing.(100) silicon of face reaches as substrate and scribble Si on diaphragm 704 3N 4Film 713.Around diaphragm 704, form etch-hole and under diaphragm, depleted of and formed a cavity.Use Si then 3N 4Film 713 seals up etch-hole.Under the situation of acceleration transducer, the measure of using catch to prevent excess in displacement and conduct to improve anti-seismic performance.
Figure 60 represents the sectional view of prior art semiconductor acceleration sensor.In Figure 60, it comprises a cantilever 8102 that forms by etching, and a pouring weight 8103, and it is the mass fraction on the silicon chip 8101, and the diffusion resistance that degree of will speed up converts electric signal to is formed on the cantilever 8102.Structure has a upper stop piece 8105 and lower stop piece 8106 below reaching above this silicon chip 8101, is used to prevent the damage of cantilever, and this damage may take place under excessive acceleration.
When acceleration from direction shown in the figure promptly the figure from the top to the direction of bottom, when being applied on the acceleration transducer, cantilever 8102 skews, and the resistance value of diffusion resistance is with stress changes.This acceleration transducer utilization is exported this variable quantity and is come sense acceleration.
But, be to utilize the microcomputer processing technology and make the attenuation of diffusion resistance cross section increase sensitivity of method produced as the prior art semiconductor acceleration sensor of semiconductor devices with etching, therefore have following problem:
1) operation that need protect other wiring etc. so that carry out etching, makes the attenuation of displacement detecting cross section;
2) because for example applying resist layer, version seal operation makes the manufacture process lengthening;
3) because of wet processing, the thickness in etching period and displacement detecting cross section significantly depends on the condition of etchant and changes;
4) because of the attenuation of diffusion resistance part, a little less than its anti-seismic performance; And
5) because diffusion resistance is partly thin, it is consuming time big to make element.
Utilization of the present invention has the substrate formation cantilever of diffusion resistance by taking-up straightforward procedure can provide acceleration transducer cheaply thus by the acceleration sensor element of a Semiconductor substrate acquisition big figure.
In addition, it can obtain to have the structure of strong anti-seismic performance, does not have on the part that stress concentrates on it because cantilever constitutes the plane with single thickness.
And under the situation as the pressure transducer of semiconductor devices, use the method for wet type technology attenuation and at this moment pressure reference chamber is set and detects displacement with diaphragm, it has the following problem that is similar to acceleration transducer:
1) because use the photoetching mask-making technology, manufacture process is as applying the time lengthening of resist layer;
2) because in the etching diaphragm, use firm substrate or analog and chemical agent that the parts beyond the diaphragm are exerted an influence, the technology that is used for to the parts manufacturing except that diaphragm is restricted;
3) owing to wet processing, diaphragm processing time and finished product thickness rely on the condition of etchant significantly and change, and have reduced its output thus; And
4) because adopted wet type technology, the processing time of diaphragm and finished product thickness rely on the condition of etchant significantly and change, and have reduced its output thus.
Therefore, an object of the present invention is to provide a kind of semiconductor pressure sensor, its diffusion resistance is easy to be made and have high sensitivity, to solve above-mentioned prior art problems.
The following anti-tamper mechanism of describing prior art with reference to Figure 61 to 63.In Figure 61 to 63, substrate 801 is folded up between a upper stop piece 803 and lower stop piece 804, so just limited the distortion of substrate 801 for excessive acceleration.Figure 62 is illustrated in the position that does not have acceleration to apply thereon state subtegulum 801, upper stop piece 803 and lower stop piece 804.Acceleration has been applied on this sensor in the state of Figure 61 and 63, and Figure 61 represents to utilize upper stop piece 803 to stop the situation of substrate 801 damages.But, when load is applied on the thin cross section, also have the possibility that substrate 801 is damaged from thin section.In Figure 63, just has the possibility that substrate 801 is damaged by lower stop piece 804.
Therefore, the anti-tamper mechanism of prior art acceleration transducer has following problem:
1) because catch has stoped excess in displacement, this excess in displacement is that the big acceleration shock by the far-end of cantilever causes, has therefore just applied impulsive force on cantilever;
2) load is applied on the thin cross section with diffusion resistance; And
3) though taked in the shell of acceleration transducer filling silicon oil to reduce the measure of impulsive force, need cost the manufacturing equipment of installing filling silicon oil.
Therefore, the present invention also aims to:
1) has the structure that can reduce impulsive force;
2) reduce the load that is applied on the thin cross section with diffusion resistance; And
3) reduce manufacturing cost and improve its anti-vibration ability.In order to address the above problem, adopted following measure.
As first measure, be that parts that will comprise the semiconductor devices of semiconductor acceleration sensor and semiconductor pressure sensor make column (rectangular parallelepiped).
As second measure, be that the diffusion resistance that is used for proof stress partly makes with cantilever and has same thickness and do not make its attenuation.These parts have flat horizontal surface and do not have thin cross section.
As the 3rd measure, be the semiconductor transducer element is removed Semiconductor substrate and to be connected on the supporting member.
As the 4th measure, be used to make the Offset portion (cantilever) that under stress, produces displacement to constitute by polymeric material with the connector that the supporting member of this part of supporting is connected.
As the 5th measure, Offset portion (cantilever) is connected with supporting member and is used for mechanically supporting Offset portion.
As the 6th measure, supporting member made by use glass and cantilever is by anodically-bonded dose with being connected of supporting member.
As the 7th measure, circuit makes the CMOS structure.
As the 8th measure, the temperature-compensation circuit that is used to eliminate the drift that temperature causes has been installed on the semiconductor element of cantilever.
As the 9th measure, wherein assembled the circuit that amplifies made in the current potential output that is proportional to acceleration, even so that current potential this very faint output that this circuit also can adapt to the displacement cantilever when being output as the microvolt order of magnitude it is sufficiently amplified.
As the tenth measure, a plurality of resistance are set in utilization and the adjustment that resistance adapts to output is eliminated in utilization, is used to make the voltage output of amplifier to be adjusted to an output valve, to obtain desirable output valve.
As the 11 measure, counterweight is arranged on the several position of cantilever, and the counterweight that is provided with is selected or adjusted adapting to output valve because be difficult to make counterweight remain on one qualitatively suitable.
As the 12 measure, use a kind of method for packing that encapsulates acceleration transducer, its permission available laser beam behind the installing encapsulating shell is adjusted.
As the 13 measure, diffusion resistance and electrical wiring are arranged on the side of the cantilever in the semiconductor devices that comprises semiconductor acceleration sensor of the present invention.
As the 14 measure, adopted the method for a kind of detection corresponding to the resistance change of compression and drawing stress, be about to diffusion resistance and be arranged near the surface and the back side of cantilever.
And adopt following measure to solve the problem of pressure transducer.
As the 15 measure, will have the substrate 702 of film and sensing element 701 and make discrete parts and couple together again.
As the 16 measure, on substrate 702, be arranged on the sensing element 701 that (on the position perpendicular to diaphragm) on its side has diffusion resistance with the diaphragm that forms pressure reference chamber.
As the 17 measure, adopted the method for a kind of detection, promptly utilized to reach near the surface (side of exerting pressure) at element near the back side of element (side of diaphragm), diffusion resistance to be set and to form bridge circuit corresponding to the compression and the resistance change of drawing stress.
As the 18 measure, the sensing element 701 with diffusion resistance 708 only is that an one edge is fixed.
The measure as nineteen, the sensing element with diffusion resistance 708 is by cutting and be connected on the substrate 702 with diaphragm 704.
As the 20 measure, sensing element 701 is connected to have on the opening substrate 716.
As the 21 measure, with sensing element 701 from making its polishing attenuation after Semiconductor substrate cuts out and being connected on the substrate 702 with diaphragm 704.
As the 22 measure, it is consistent to constitute the cantilever shape that the catch prevent to damage makes it be out of shape with being subjected to acceleration, so that the increase anti-seismic performance.It is consistent to notice that the present invention preferably is configured it with the curve of deviation of cantilever.
As the 23 measure, the diffusion resistance side that will have the acceleration transducer of diffusion resistance is fixed into towards support substrate, with box lunch in addition also can protect acceleration transducer when being subjected to excess acceleration by support substrate.In addition, the output pad of acceleration sensing element 1001 utilizes adverse current to be connected with wiring board, so that this acceleration sensing element 1001 can fix in the circuit board, and implements to draw the method for electric signal simultaneously.
Fig. 1 is the structured flowchart of explanation semiconductor acceleration sensor typical structure one example of the present invention.Cantilever 1 utilizes supporting coupling arrangement 101 to be connected with supporting member 2.Be exaggerated circuit 101 amplifications and be transferred to output unit 104 by cantilever 1 detected acceleration signal.Carve at this moment, eliminate by the drift usable temp compensating circuit 102 that temperature causes.
Fig. 2 is the block diagram that the method for acceleration transducer of the present invention is made in explanation.On step 201, make cantilever, in another operation of step 202, make supporting member, in step 203, cantilever is connected with supporting member then.
Fig. 3 is the block diagram of the manufacture method of explanation acceleration transducer of the present invention.On step 301, make the semiconductor element that comprises amplifying circuit and temperature-compensation circuit, on step 302, gain on the wafer and biasing are adjusted, and on step 303, utilize cutting that element divisions is become each discrete component.On step 304, semiconductor element is fixed on the supporting member, and on step 305, a shell is fixed on the terminal matrix.Then, on step 306, measure bias voltage and gain, and on step 307; Based on these data, carve by laser beam and to cut resistance R and adjust biasing and gain.At last, on step 308 during as delivery inspection frequency characteristic and temperature characterisitic measure.After this sensor is delivered.
Fig. 4 is the block diagram that explanation the present invention makes the other method of acceleration transducer.The gain on wafer and the adjustment of biasing can be cuttings.Above-mentioned measure can obtain following effect.
Because first measure of employing, cantilever can constitute easily, need not to make the attenuation of diffusion resistance part.
Because adopt second measure, cantilever can constitute easily, need not to make the attenuation of diffusion resistance part.
Because the 3rd measure, its process does not resemble the monolithic program of silicon technology long, because can separately make each independent function.It can solve the modification problem that is caused by membrane stress in addition, and this is a problem in thin-film technique.It can form bracketed part with conventional semiconductor technology, and formation has the 8mm of being of a size of length, the semiconductor element that 0.5mm is wide and 0.1mm is thick in this semiconductor technology.
Because adopt the 4th measure, cantilever 1 can be connected with supporting member 2 at low temperatures, and the parts of cantilever 1 or supporting member 2 are easy to be replaced.
Because adopt the 5th measure, cantilever 1 can be connected rigidly with supporting member 2, and the parts of cantilever 1 or supporting member 2 are easy to easily be changed.
Because adopt the 6th measure, cantilever 1 can be connected with supporting member 2 easily.
Owing to adopt the 7th measure, can constitute the circuit of low power consumption.
Because adopt the 8th measure, temperature-compensation circuit is easy to be set on the cantilever 1, because cantilever 1 usefulness semiconductor technology constitutes.
Because adopt the 9th measure, amplifying circuit is easy to be set on the cantilever 1, because cantilever 1 usefulness semiconductor technology constitutes.
Owing to adopt the tenth measure, can remove and adjust resistance according to output.
Owing to adopt the 11 measure, can adjust with outside measure at last by the output dispersiveness that the thickness dispersiveness of cantilever 1 causes.
Owing to adopt the 12 measure, can adjust with outside measure at last by the output dispersiveness that the thickness dispersiveness of cantilever 1 causes.
Owing to adopt the 13 measure, promptly utilize in the side of semiconductor acceleration sensor circuitous pattern is set, as diffusion resistance and output, the component number that takes out from Semiconductor substrate is increased, this allows to make the manufacturing cost reduction, and it can make to such an extent that have single thickness in addition, has excellent anti-shake performance.
Because adopt the 14 measure, the situation that is arranged on element surface with diffusion resistance is compared the sensitivity that its output valve can obtain twice.
Owing to adopt the 15 measure, the step of the processing sensing element 701 that the step of the diaphragm 704 of i.e. utilization and formation substrate 702 is separate, make the formation of sensing element 702 can not be subjected to constituting the influence of substrate 702 steps, promptly diffusion resistance 8 can form accurately.
Owing to adopt the 16 measure, be about on its side (on the position perpendicular to diaphragm) comprises the sensor element 701 of diffusion resistance, to be provided with and have diaphragm 704 and constitute on the substrate 702 of diaphragm 704, this semiconductor devices can be with good output manufacturing, because this element does not integrally form with pressure reference chamber.
Owing to adopt the 17 measure, compression stress that puts on diffusion resistance 783 among Figure 36 and 784 and the drawing stress combination that puts on diffusion resistance 781 and 782 enlarged the resistance change that obtains as the output valve that obtains.
Owing to adopt the 18 measure, only be that positive characteristic can be exported by the reference pressure of diaphragm.
Owing to adopt the nineteen measure, be about to sensing element 701 and cut down and make it to be connected with substrate 702 with diaphragm 704 from Semiconductor substrate, this sensing element 701 is easy to make and have good output.
Owing to adopt the 20 measure, do not need in substrate 702, to use the step that forms diaphragm 704, so substrate 702 can be manufactured at an easy rate.
Owing to adopt the 21 step, be about to the sensing element attenuation, detection sensitivity is improved.
Owing to adopt the 22 step, catch by its face contact but not the some contact alleviate and impact because the structure of catch has the shape identical with the cantilever curve of deviation, even also can stop its damage during owing to the excess acceleration displacement when cantilever.
When an acceleration was applied on the cantilever equably, its curve of deviation can be represented with following equation:
Y=W1 4/ 8E1 (1-4X/31+X 4/ 31 4) ... (1) Y is a side-play amount in the formula, and W is a quality, the 1st, and the length of cantilever, E is that longitudinal modulus of elasticity and I are the section second moments.
Owing to adopt the 23 measure, can be not subject to twist very much etc. influence and other axially the element utilization of influence a kind of layout is arranged to wiring board in the diffusion resistance side, wherein circuitous pattern such as diffusion resistance and output are arranged on the side of semiconductor acceleration sensor.In addition, even owing to following reason element in the method that makes the diffusion resistance attenuation of prior art products also shows good characteristic.Here it is, always uses silicon materials to be used for semiconductor acceleration sensor.Because silicon materials have excellent conversion of signals effect, it also has outstanding quality aspect mechanical quality.For example, though (Young ' s) modulus relies on crystallographic direction and difference to the Young of silicon more or less, and its maximal value is near this modulus value of steel and show better elastic.
The acceleration sensing element of the cantilever design of living for cantilever one end bearing is compared from the situation that the side with attenuation part receives acceleration with the acceleration transducer as shown in Figure 72, when the diffusion resistance side joint is received acceleration, is difficult to make its damage.
So structure of the present invention is to make the diffusion resistance side of the acceleration transducer with diffusion resistance facing to wiring board, consequently, can obtain following effect.
1) since the diffusion resistance side to the structure of support substrate, when sensing element during towards the displacement of diffusion resistance side sensing element contact with wiring board, thereby stoped the damage of element; And
2) owing to make the reaching the standard grade towards wiring board of acceleration transducer, this lead-in wire is easy to connect and be easy to output.
In order more fully to understand the present invention, in detailed description of the present invention, used accompanying drawing, wherein each brief description of drawings is as follows:
Fig. 1 is the structured flowchart of semiconductor acceleration sensor of the present invention;
Fig. 2 is the manufacture process block diagram of semiconductor acceleration sensor of the present invention;
Fig. 3 is the block diagram of the manufacture process of semiconductor acceleration sensor of the present invention;
Fig. 4 is the manufacture process block diagram of semiconductor acceleration sensor of the present invention;
Fig. 5 is a skeleton view of semiconductor acceleration sensor of the present invention;
Fig. 6 is a skeleton view of prior art semiconductor acceleration sensor;
Fig. 7 is the side view how explanation cantilever of the present invention is connected with supporting member;
Fig. 8 is the side view how explanation cantilever of the present invention is connected with supporting member;
Fig. 9 is the side view how explanation cantilever of the present invention is connected with supporting member;
Figure 10 is the side view how explanation cantilever of the present invention is connected with supporting member;
Figure 11 is the circuit diagram of the amplifying circuit of semiconductor acceleration sensor of the present invention;
Figure 12 is the circuit diagram of the amplifying circuit of semiconductor acceleration sensor of the present invention;
Figure 13 is the circuit diagram of expression differential amplifier circuit adjustment member of the present invention;
Figure 14 is the explanation figure of expression bridge circuit method of adjustment of the present invention;
Figure 15 is the explanation figure of expression bridge circuit method of adjustment of the present invention;
Figure 16 is a side view of semiconductor acceleration sensor of the present invention;
Figure 17 is the explanation figure of explanation the present invention by the method for adjustment of laser;
Figure 18 is the figure of the method for packing of explanation semiconductor acceleration sensor of the present invention;
Figure 19 is the figure of explanation semiconductor element of the present invention;
Figure 20 is the figure of explanation semiconductor element of the present invention;
Figure 21 is the figure of explanation terminal matrix of the present invention;
Figure 22 is the figure of explanation semiconductor acceleration sensor of the present invention;
Figure 23 is the figure of explanation semiconductor acceleration sensor of the present invention;
Figure 24 is the skeleton view of an embodiment of semiconductor acceleration sensor of the present invention;
Figure 25 is the sketch plan of a circuit of semiconductor acceleration sensor of the present invention;
Figure 26 is the skeleton view of prior art semiconductor acceleration sensor;
Figure 27 is the block diagram of explanation prior art semiconductor acceleration sensor circuit;
Figure 28 is the block diagram of explanation semiconductor acceleration sensor circuit of the present invention;
Figure 29 is the figure that is used for illustrating position of components in the silicon chip of one embodiment of the invention wafer state;
Figure 30 illustrates that element is removed the explanation of state with scheming according to an embodiment of the invention;
Figure 31 is that the explanation explanation that element is connected with bearing substrate according to the present invention is with scheming;
Figure 32 is the sectional view of an embodiment of explanation semiconductor pressure sensor of the present invention;
Figure 33 is the sectional view of pressure detection part among this embodiment of explanation semiconductor pressure sensor of the present invention;
Figure 34 is the sectional view of prior art semiconductor pressure sensor;
Figure 35 is the sectional view that utilizes the pressure transducer of microcomputer processing and manufacturing in the prior art semiconductor pressure sensor;
Figure 36 is the figure of a kind of circuit of explanation semiconductor pressure sensor of the present invention;
Figure 37 is the figure of explanation semiconductor pressure sensor manufacture method of the present invention;
Figure 38 is the figure of explanation semiconductor pressure sensor manufacture method of the present invention;
Figure 39 is the figure of explanation semiconductor pressure sensor manufacture method of the present invention;
Figure 40 is the explanation figure of explanation sensing element operation of the present invention;
Figure 41 is the explanation figure of explanation sensing element operation of the present invention;
Figure 42 is the explanation figure of explanation sensing element operation of the present invention;
Figure 43 is the cut-open view of semiconductor pressure sensor one embodiment of the present invention;
Figure 44 is the sectional view of pressure detection part among this embodiment of semiconductor pressure sensor of the present invention;
Figure 45 is the explanation figure that explanation diffusion resistance of the present invention is arranged;
Figure 46 is the explanation figure of mutual relationship between explanation diffusion resistance of the present invention and the bearing substrate;
Figure 47 is the curve map of the explanation output sensitivity relevant with bearing substrate with diffusion resistance of the present invention;
Figure 48 is the curve map of mutual relationship between explanation chip size of the present invention and the output sensitivity;
Figure 49 is the curve map of explanation according to the output voltage from 0 ° to 360 ° of the present invention;
Figure 50 is the curve map from 0 ° to 360 ° output voltage of explanation according to prior art;
Figure 51 is the figure that explanation concerns between chip width, chip thickness and the S/N according to the present invention;
Figure 52 is the curve map of explanation twin shaft sensor of the present invention from 0 ° to 360 ° output voltage;
Figure 53 is the figure of explanation twin shaft sensor of the present invention;
Figure 54 is the figure of the crowded formula circuit of explanation twin shaft sensor of the present invention;
Figure 55 is the figure of the bridge circuit of explanation twin shaft sensor of the present invention;
Figure 56 is a circuit diagram of the present invention;
Figure 57 is the planimetric map of explanation circuit layout of the present invention;
Figure 58 is the sectional view of semiconductor acceleration sensor of the present invention;
Figure 59 is the skeleton view of semiconductor acceleration sensor of the present invention;
Figure 60 is the sectional view of prior art semiconductor acceleration sensor;
Figure 61 is the figure of explanation prior art semiconductor acceleration sensor;
Figure 62 is the figure of explanation prior art semiconductor acceleration sensor;
Figure 63 is the figure of explanation prior art semiconductor acceleration sensor
Figure 64 is the figure of explanation semiconductor acceleration sensor of the present invention;
Figure 65 is the figure of explanation semiconductor acceleration sensor of the present invention;
Figure 66 is the figure of explanation semiconductor acceleration sensor of the present invention;
Figure 67 is the skeleton view according to the semiconductor acceleration sensor of second embodiment of the invention;
Figure 68 is the skeleton view according to the semiconductor acceleration sensor of third embodiment of the invention;
Figure 69 is front view and the skeleton view of semiconductor acceleration sensor one embodiment of the present invention;
Figure 70 is the front view of prior art semiconductor acceleration sensor;
Figure 71 is the explanation figure of explanation semiconductor acceleration sensor manufacture method of the 25th embodiment according to the present invention;
Figure 72 is the figure of explanation prior art semiconductor acceleration sensor one embodiment;
Figure 73 is the explanation figure of explanation semiconductor acceleration sensor manufacture method of the 26th embodiment according to the present invention;
Figure 74 is the figure of explanation semiconductor acceleration sensor manufacture method of the present invention;
Figure 75 is the explanation figure of explanation semiconductor acceleration sensor manufacture method of the present invention;
Figure 76 is the explanation figure of explanation semiconductor acceleration sensor manufacture method of the 27th embodiment according to the present invention;
Figure 77 is the explanation figure of explanation semiconductor acceleration sensor manufacture method of the 29th embodiment according to the present invention;
Figure 78 is the explanation figure of explanation semiconductor acceleration sensor manufacture method of the 29th embodiment according to the present invention;
Figure 79 is the explanation figure of explanation semiconductor acceleration sensor manufacture method of the 29th embodiment according to the present invention;
Figure 80 is the explanation figure of explanation semiconductor acceleration sensor of the 30th embodiment according to the present invention.
Hereinafter with reference to accompanying drawing the preferred embodiments of the present invention are made an explanation.
[first embodiment]
Fig. 5 is the skeleton view of the semiconductor acceleration sensor of semiconductor devices of the present invention.In this semiconductor acceleration sensor, diffusion resistance R is connected on the cantilever 1 with bridge circuit, and has added temperature-compensation circuit and amplifying circuit, and cantilever 1 is connected with supporting member 2.In the present embodiment, cantilever 1 constitutes as individual components with supporting member 2, is not to adopt integrated artistic.It is long that present embodiment can realize having 8mm, the device that 0.5mm is wide and 0.1mm is thick, and it is quite little as semiconductor devices.
In a kind of manufacture method of semiconductor acceleration sensor of the present invention, the manufacturing of semiconductor devices is at first to make cantilever 1, makes supporting member 2 then.Supporting member 2 is to use with the semiconductor devices identical materials and makes, so that avoid the influence of thermal stress as much as possible.Then, connect cantilever 1 and supporting member 2, in Fig. 7 to 10, express each method that is used to connect cantilever 1 and supporting member 2.
[second embodiment]
A kind of easy means that cantilever 1 and supporting member 2 are fixed is mechanically to fix them as shown in Figure 7.They can utilize and get out screw and cantilever 1 and a pad 22 are tightened thereon together on supporting member, and pad 22 is used to pressing cantilever.
[the 3rd embodiment]
As shown in Figure 8, use glass 5 as supporting member, and utilize the anode welding compound that it is welded mutually with cantilever 1.
[the 4th embodiment]
Utilize bonding agent or polymeric material, typically use epoxy resin 6, as shown in Figure 9, they are connected.
[the 5th embodiment]
They also can utilize metal melting welding to connect and be connected with each other, and as shown in Figure 10, solder joint 7 are set betwixt.
[the 6th embodiment]
But, preferably use the bonding agent that has with cantilever 1 and supporting member 2 same coefficient of thermal expansion, so that eliminate thermal stress.
[the 7th embodiment]
It is output as 0.1mV because semiconductor acceleration sensor according to the present invention has above-mentioned size, at this moment consider that its weight is that 2.8mg heavily calculates, should be worth too little as output valve, therefore in the structure of semiconductor acceleration sensor, be provided with an output amplifier, to obtain 100 times gain.
[the 8th embodiment]
Because cantilever 1 of the present invention is a semiconductor element, therefore in this element, be provided with the temperature-compensation circuit that is used to avoid temperature drift effects.And can the adjustment function be set to this circuit.The circuit block diagram of Figure 12 and 13 these circuit of expression.Figure 12 represents that set differential amplifier circuit is connected with bridge circuit 20.The circuit 9 that is used for adjustment is located on the differential amplifier circuit.Adjust circuit 9 and shown in Figure 14 A, constitute, utilize and go unwanted resistance to carry out adjustment by cut, as shown in figure 15 according to output valve.
Treat that controlled resistance is formed on the supporting member part of sensor.
Also can adopt the method for adjustment as shown in Figure 14 B.
[the 9th embodiment]
As shown in figure 13, resistance R 5 and R6 are located in the bridge circuit 20, are formed for the element that adjusts according to output.As shown in figure 11, bias resistor is set in operation amplifier circuit, to regulate biasing.Be used to setover and the identical mode of the available and above-mentioned method of adjustment of adjustment of amplification coefficient is carried out, prepared a plurality of resistance therein, and remove unwanted resistance, shown in Figure 14 and 15 with laser and similarity method.
[the tenth embodiment]
As shown in Figure 16, counterweight 3 is set on the far-end of cantilever 1, so that increase displacement.
[the 11 embodiment]
Figure 17 represents counterweight 3 controlled situations.On the edge of cantilever 1, be provided with a plurality of counterweights 3.Mutual relationship between counterweight 3 and the output is that calculated in advance is good, and the counterweight of utilizing laser 17 to eliminate on the appropriate location can adapt to a specific output.This method allows to obtain to produce the acceleration transducer of more accurate output valve.
[the 12 embodiment]
When cantilever, supporting member and counterweight are covered by glass tube or analog, can utilize the wavelength of laser 17 to pass glass tube from the outside and adjust them easily at last.Figure 18 represents this encapsulating structure.Also can use elastic body as making encapsulating shell be connected to the structural part of semiconductor transducer, to increase the anti-shake performance of this encapsulating structure.
[the 13 embodiment]
Figure 19 to 23 at length represents the example of manufacture method of the semiconductor transducer of present embodiment.
Shown in the sketch plan of Figure 19 A, at first produce the semiconductor devices 15 that comprises an amplifying circuit and a temperature-compensation circuit, Figure 19 B represents the circuitous pattern on this semiconductor devices 15.Then, as shown in figure 20, semiconductor devices 15 is fixed on the bearing substrate 16, is used for its displacement.Then, as shown in figure 21, make a terminal matrix 13, the stainless steel 12 that wherein becomes terminal passes a hollow tubular and is used in and inserts molten glass in the pipe they are fixed.Then, as shown in figure 22, terminal matrix 13 is connected on the semiconductor devices 15 that is fixed on the bearing substrate 16.At last, utilize installation protection tube 14 to make acceleration transducer, as shown in figure 23.Preferably use glass tube, it allows laser 17 to import to from the outside in the protection tube 14.Though, do not have in this embodiment to be used to limit the catch that causes excess in displacement by impact, had better use catch.But the present invention compares with the method that makes the attenuation of diffusion resistance part has stronger anti-seismic performance.
[the 14 embodiment]
Below be described in the embodiment that diffusion resistance wherein is located at the cantilever side of semiconductor transducer of the present invention.As follows to present embodiment with reference to description of drawings.Figure 24 is the skeleton view of this embodiment, and wherein circuit is arranged on the side of semiconductor acceleration sensor of the present invention.
In Figure 24, sensor comprises the cantilever 501 and the supporting member 502 that is used to support bracketed part that are used to detect stress.According to output valve counterweight is arranged on the far-end of cantilever.Side at cantilever 501 is provided with diffusion resistance, and be used to export, the weld tabs part of wiring, temperature-compensation circuit and amplifying circuit.Output valve is exported from the terminal 512 that is connected on the packaging part via the wiring on the bearing substrate 502.
The manufacture method of sensor of the present invention below will be described.At first, as shown in figure 29, will have cantilever shape and have the semiconductor element of diffusion resistance 505 to be formed on the Semiconductor substrate 507.On around each semiconductor element, draw the line 508 be useful on cutting, cut out so that cut based on this line utilization.This external dimensions of cutting sample is that 6mm is long, 0.1mm is wide and 0.525 height, it by nominal be used as semiconductor devices of the present invention.Figure 30 represents to cut this semiconductor element of formation.Cutting mode can easily be made has the wide element of 0.1mm.
Then, use silicon adhesive that cantilever 501 is bonded on the supporting member 502, so that their thermal expansivity of equilibrium.Utilize gold to make weld tabs part 503 and make the weld tabs of cantilever 501 and the weld tabs of supporting member 502 close, utilize solder joint 509 that they are welded mutually, thus, the wiring of cantilever 501 is connected with the wiring of supporting member 502.Figure 31 is illustrated in this constantly soldered part.So cantilever 501 is connected with supporting member 502, last, the terminal 512 of packaging part is connected, so that its outside that outputs to packaging part is come with wire bonds with the terminal weld tabs of bearing substrate 502.
Followingly circuit of the present invention is described with reference to Figure 25.Utilize bridge circuit 511, compression stress that causes from the displacement of cantilever 501 and the difference between the drawing stress detect output valve.This elaborates by Figure 27 and 28 hereinafter.When on a plane, having spread resistance, be to constitute to have reference resistance R in the prior art 2And the bridge circuit of measuring resistance R1.Work as R 2Be R value, then R 1Available R+ △ R represents.Its output Vout can represent with following equation at this moment:
V 1＝(R/2R＋△R)V
V 2＝(R＋△R/2R＋△R)V
Vout＝V 2－V 1＝(△R/2R＋△R)V …(2)
In circuit of the present invention shown in Figure 28, work as R 1When having the resistance value R+ △ R that causes by compression stress, R 2Then have the resistance value R-△ R that is caused by drawing stress, its output Vout can represent with following equation:
V 1＝(R－△R/2R)V
V 2＝(R＋△R/2R)V
Vout＝V 2－V 1＝(△R/R)V …(3)
Owing to be that very little value is reached from equation (2) when being ignored (3), circuit of the present invention will have two times output as △ R.
In the present invention, it is long that the semiconductor acceleration sensor that produces has 6mm, and 0.525mm is wide and 0.1mm is thick.When applying the voltage of 5V on this semiconductor acceleration sensor, its output voltage is 0.7mV.Add the counterweight that is used to increase output then, obtained the output of 3mV.At this moment amplifying circuit is not passed through in the output that is obtained.
Though only on a side of cantilever, be provided with diffusion resistance in the present embodiment, should be understood that it is effective therefore diffusion resistance being set on the side owing to just also might detect torsion when on two sides at cantilever diffusion resistance being set.
Though semiconductor acceleration sensor is of a size of 6mm length in the present embodiment, 0.525mm is wide and 0.1mm is thick, also may make its width for example change over 0.3mm according to the Semiconductor substrate of using.In view of the thickness of conventional Semiconductor substrate, its width is all at 0.2mm to 1mm.
A kind of structure below is described, in this structure, diffusion resistance is set on the direction of cantilever side acceleration sensing.
[the 15 embodiment]
Figure 45 represents that the resistance that has is set at the structure of the acceleration transducer on the cantilever side acceleration analysis direction (position relation).
In order to make the output sensitivity maximum, the position relation between cantilever 501 and the supporting member 502 is very important.As shown in Figure 45, a reference position is located on the position of 1/2L of supporting mass one side (L: the whole length of diffusion resistance), as shown in figure 45.Its optimum value is illustrated with reference to Figure 46 and 47.When diffusion resistance on the supporting member side is L 1When long, it will be at ± 1/2L 1Scope (useful scope) in output.Optimum value is positioned at from stress concentration point shifts to positive dirction (about 1/8L 1) a position on.Figure 47 represents the result of this moment.
Followingly illustrate that with reference to Figure 45 diffusion resistance is to the position of element width relation.As the t shown in the figure 1Can obtain higher sensitivity when approaching the outside.Can utilize and regulate t xAnd t oRegulate sensitivity.
t xAnd t oThe available following equation of relation express:
Vout＝V 2－V 1＝(△R/R)VX(t x＋2W)/t o …(4)
Here it is, works as t xWith t oRatio when big sensitivity improve.
Below explanation is used for determining the method for acceleration sensing component structure specification.It is to obtain required chip length of identical output and the relation curve between the thickness under 5G acceleration condition that Figure 48 shows at 1G.The thickness of chip depends on the restriction (should greater than 0.08mm: depend on the cutting of sheet and the size of o pads) of the job operation that when cutting is used.Solid line among the figure shows and is used to obtain the size of 1G to the chip of 5G acceleration output.
If it will be useful comprising an amplifying circuit because element manufacture area in the drawings on the 1G curve (1) a bit, area of chip is bigger.Curve from 1G to 5G (2) representative has increased the situation of counterweight.Preferably add this counterweight, because the area of element increases an amplifying circuit inadequately under the situation of for example putting b.That is to say that this is a kind of compromise relation.
Yet under the situation of high G, for example curve (3) (not having counterweight) and curve (4) (counterweight is arranged) add that this counterweight instead can increase cost, because size is determined by smallest chip size (some C and d).
It is noted that above-mentioned o pads is to be arranged in rows on the length direction of sensor, they are located on the support section relevant with sensor thickness.
The semiconductor devices that comprises semiconductor acceleration sensor is to make like this, promptly cuts element by cutting from Semiconductor substrate, and form element on the acceleration detection direction of semiconductor acceleration sensor support one side.At this moment, the hydraulic pressure that adopts when preventing that the very little element of volume is cut washes away, and need be fixed on semiconductor chip on the fixed band with high-adhesive-strength, and can reduce bonding strength by the ultraviolet ray irradiation, so that they are taken off.
Below explanation forms an embodiment of circuit within the element with little chip thickness (width).Sort circuit can be contained within the element with little chip thickness (width), its way is to form two row MOS transistor at top and bottom, is symmetrical thereby make the source electrode of MOS transistor and the W-length direction of drain electrode round the center sensor line on the Sensor section L-length direction of sensor.With regard to the problem of line, the aluminum steel that is electrically connected with the polysilicon of MOS transistor and formation active component in the outside formation of the polysilicon resistance of MOS transistor part, or the aluminum steel that is electrically connected with the MOS transistor of forming circuit of formation.
If utilize trap (well) to form diffusion resistance, just can further improve sensitivity.
Below will be with reference to the description of drawings embodiments of the invention.
[embodiment 16]
Figure 32 shows a pressure transducer of the present invention.
A substrate 702 is arranged in Figure 32, and it has a diaphragm that is out of shape 704 and is located at sensing element 701 on the diaphragm 704 under stress, is used for detecting displacement according to the fluctuation of the resistance value of diffusion resistance.Sensing element 701 comprises the pad portion that is used to export electric signal, lead, and temperature-compensation circuit and amplifying circuit, they are formed on the sensing element side.Output valve outputs to the terminal 707 that is added on the shell from substrate 702 by line 709.
Figure 33 is the enlarged drawing of sensing element part, and the sensing element 701 that side wherein has diffusion resistance 708 is arranged on above the diaphragm 704, and diaphragm 704 is in pressure-dependent pressure reference chamber 703 tops.
Figure 37 to 39 shows manufacture method of the present invention.As shown in figure 37, the semiconductor element with diffusion resistance 8 is formed on the Semiconductor substrate 710.Then the vertical position at sensing element 701 carves line, 711 cuts to the layout line.In Figure 37, line is cut into the long and wide size of 0.1mm of 6mm.Figure 37 B is an enlarged drawing, shows to utilize the element separately that cuts out.That is to say that this manufacture method is to determine the displaced portion (t among Figure 45 by cutting (promptly being divided into individual) o).Figure 38 represents the sensing element 1 made in this way.It highly is 0.525mm, and this is the thickness of Semiconductor substrate.Can make the thick element of 0.1mm easily by cutting.
Next, Figure 39 shows sensing element 701 is connected in situation on the substrate 702.In Figure 39, the expansion coefficient at balanced substrate 702 of welding portion and sensing element 701 uses silica gel to connect.This connection can provide a kind of pressure transducer of the stress influence that is not heated.
The following circuit that explanation is adopted in the present invention with reference to Figure 36.In Figure 36, the side of sensing element 701 comprises one by diffusion resistance 781,782,783 and 784 714, one earth terminals 751 of bridge circuit that constitute, and output terminal 752 and 753, and an Input voltage terminal 754, sensing element 701 is welded on the diaphragm 704.When sensing element 1 was moved, compression and drawing stress were added to the upper and lower end of sensing element 701, and can be detected by the bridge circuit that diffusion resistance constitutes, and the output of the difference of compression and drawing stress is from o pads 703 outputs.
Below the advantage that diffusion resistance 708 is contained in sensing element 701 sides to be described.In the prior art diffusion resistance is established under in one plane the situation, formed one and had reference resistance R 2With measuring resistance R 1Bridge circuit.If R 2Be R, R 1Can be expressed as R+ △ R.The output Vout of this moment can represent with following formula:
V 1＝(R/2R＋△R)V (5)
V 2＝(R＋△R/2R＋△R)V (6)
Vout＝V 2－V 1＝(△R/2R＋△R)V (7)
In circuit of the present invention, if R 1Resistance value be the R+ △ R that is linked to be by compression stress, and R 2Resistance value be the R-△ R that is linked to be by drawing stress, output Vout just can represent by following formula:
V 1＝(R-△R/2R)V (8)
V 2＝(R＋△R/2R)V (9)
Vout＝V 2－V 1＝(△R/R＋)V (10)
If ignore from equation (7) and (10) because △ R is very little, circuit of the present invention is compared with the circuit of prior art and just can be obtained two times output.
In the present invention, it is long to have made a kind of 6mm, the semiconductor acceleration sensor that 0.525mm is wide and 0.1mm is thick.If apply 5V voltage on this acceleration transducer partly leading, its output voltage is 1.4mV.Be noted that this output valve is to obtain under the condition of amplifying circuit not having.
[embodiment 17]
Figure 40 and 42 only shows a fixedly embodiment at the edge of sensing element 701.In Figure 40, sensing element 701 is connected the position that does not have diaphragm 704 on the pedestal 702.The state of the pressure that Figure 40 shows pressure reference chamber 703 during with outside balancing each other.Figure 41 shows the state that environmental pressure is higher than reference pressure, although distortion has appearred in diaphragm 704, and sensing element 701 is supported by the edge, and does not detect the displacement that is caused by pressure.Yet when environmental pressure was lower than reference pressure, as shown in figure 42, diaphragm 704 and sensing element 701 all deformed.Therefore, can only detect the pressure that is lower than pressure reference chamber.
The fixedly embodiment at sensing element edge below only is described, referring to Figure 41 B and 42B.In Figure 41 B, when diaphragm 704 was higher than reference pressure owing to environmental pressure and is out of shape, sensing element 701 was supported by its edge, does not detect the displacement that pressure causes.In Figure 42 B, when environmental pressure was lower than reference pressure, diaphragm 704 and sensing element 701 all deformed as shown in the figure.So just can only detect the pressure that is lower than pressure reference chamber.
Have a talk about again and improve sensitivity of method among the present invention.In manufacture method of the present invention shown in Figure 37, after being installed on the silicon chip 702, make its attenuation by polishing to sensing element 701 in the side of sensing element 701.Just can improve the sensitivity of sensing element 701 of the present invention thus.
[embodiment 18]
Figure 43 shows the front elevation of the embodiment of the invention 18.Figure 44 shows the pressure detection part of embodiment 18.As pick-up unit, on substrate 716, be provided with an opening that meshes with sensing element 715.
So just needn't on pedestal 716, form diaphragm through etch processes, just can reduce manufacturing process thus and improve the yield rate of substrate.
[embodiment 19]
The output voltage example of acceleration transducer of the present invention on each angle adopted in Figure 49 and 50 expressions, output voltage example when Figure 49 wherein represents to use cylindricality sensing element of the present invention, and the output voltage example of Figure 50 when having represented in the past to use etch processes.Line representation element width among the figure and the ratio of thickness (W/H=1/2,1/3).In prior art constructions,,, and then have influence on output voltage because distortion can make resistance change because etched part has the tendency of distortion.Therefore, as shown in figure 50, line can not be near the output 0 at center.In order to eliminate the noise component that this part structure causes, need utilize a kind of circuit to eliminate.
Figure 51 shows the relation of wide/high (W/H) that adopts acceleration transducer column construction of the present invention.Transverse axis is represented chip width/chip thickness, and Z-axis is represented noise level.Under the 1G condition, less than 6, the usability of element is good, because noise level is very little as the relation of fruit chip width/chip thickness.Under the 20G condition, the sensor with degree of precision can be provided because at above-mentioned relation less than the influence of not twisted in 2 o'clock.
[embodiment 20]
Situation when using a twin shaft sensor will be described here.If the chip reduced width of cylindricality of the present invention (rectangular parallelepiped) acceleration transducer, because displacement still can cause the resistance change of side diffusion resistance.Double-axel acceleration sensor of the present invention has utilized this principle exactly.Following with reference to Figure 52,53,54 and 55 illustrate.
According to the present invention,, compare with above-mentioned prior art example and just can obtain two times output if diffusion resistance is set in a side of sense acceleration.Yet when using the twin shaft sensor, when needs dwindled the chip width of cylindricality of the present invention (rectangular parallelepiped) acceleration transducer, if adopt the diffusion resistance (bridge circuit is seen Figure 54) that connects into bridge circuit shown in Figure 53, output will reduce.In order in the manufacturing of twin shaft sensor, to obtain highly sensitive acceleration transducer, adopted a kind of handle to be arranged in the supporting base diffusion resistance (R of Figure 56 nearby 1And R 4) as method with reference to resistance.Figure 52 shows the output of this moment, the output pattern that 01 representative wherein comes from the acceleration detection direction, and 02 expression is from the output of diffusion resistance one side.01 and 02 is formed by the above-mentioned displacement difference that is added on the diffusion resistance in shape difference of output.Adjust two axial output sensitivities by the difference of adjusting displacement, just obtained double-axel acceleration sensor thus.Although adjust output sensitivity by adjusted position in the present embodiment, also can concern to reach this purpose by adjustment chip width/chip thickness.Figure 52 also shows adjusted curve 01 ' and 02 ' (dotted line).By this adjustment,, use thereby can be used as the twin shaft sensor from the output of diaxon output equity.
[embodiment 21]
To describe the semiconductor acceleration sensor of making in detail in the present embodiment.With reference to accompanying drawing 56 circuit that comprises amplifying circuit to be described.This circuit is made of a full-bridge circuit.The resistance value of piezoresistance responds the distortion that is caused by acceleration and correspondingly changes, and bridge circuit 2002 detects consequent change in voltage.The differential output of sensor is converted to single output by differential amplifier circuit 2001, is provided with three single-ended single supply operational amplifiers of CMOS in the circuit 2001.Should be noted that differential amplifier circuit comprises the adjustment circuit that is used to adjust sensitivity, it also adjusts deviation by an impact damper.In the present embodiment, the sensor of making comprises that the total length of support section is 12mm, and the width that comprises amplifying circuit is 0.16mm.
If adopt the single-ended and chopper amplifier of these two complete differential amplifiers, can also improve S/N.
Figure 59 is a layout planimetric map of semiconductor acceleration sensor circuit of the present invention.It comprises output weld tabs part 2004, bridge circuit (piezoresistance) 2002, operational amplifier part 2001, and a biasing circuit part.In the layout area of narrower in width, to resemble note mentioned above following some.That is to say, in the very little element of chip thickness (width), circuit can be installed like this, promptly form two row MOS transistor, the center sensor line symmetry of the W-length direction that makes the source electrode of MOS transistor and drain electrode on the Sensor section L-length direction of sensor in top and bottom.On the problem of line, form the aluminum steel that is electrically connected with the MOS transistor of forming circuit in the outside of MOS transistor or polysilicon resistance part, or the aluminum steel that is electrically connected with the polysilicon of MOS transistor and formation active component of formation.
[embodiment 22]
Figure 58 is the sectional view of semiconductor acceleration sensor of the present invention.Figure 59 is the perspective view of semiconductor acceleration sensor of the present invention.Figure 59 B is the perspective view of diffusion resistance when being positioned at acceleration detection direction one side.
In Figure 58, on the silicon pedestal 801 that is fabricated from a silicon, form a thin position, and diffusion resistance 805 is set, be used for the stress transmission that displacement causes is become electric signal.Upper stop piece 803 and lower stop piece 804 are used to prevent the excessive destruction that acceleration brought, and they are located at substrate 801 tops and bottom respectively.Except diffusion resistance 805, also be provided with the weld tabs part 806 that is used to export an output valve, lead, temperature-compensation circuit, and amplifying circuit in substrate 801 sides.Output valve is exported through the terminal that lead is connected on the shell from substrate 801.
Manufacture like this with the contacted surface of silicon chip on the catch, make its curved surface with the deflection curve that meets equation mentioned above (1), this is because used cantilever in the present embodiment.The upper and lower curved surface of making is identical.
The contact point of silicon chip and catch is in the position a of edge of the slot part 808 with diffusion resistance and the position b above a of this position in Figure 58.Maximal clearance between silicon chip and the catch is to form like this, promptly when detecting a kind of specific acceleration, provides a distance that is greater than or less than the silicon chip displacement in theory, utilizes this distance to detect acceleration to be detected.
Then will be with reference to Figure 64,65 and 66 explanations prevent the principle destroyed in semiconductor acceleration sensor of the present invention.
Figure 64 illustrates that substrate 801 has received an acceleration from the bottom and the situation when moving up.In this case, substrate 801 moves and integrally bears vibration along the inside surface of upper stop piece 803.Figure 65 shows the state that does not bear acceleration.Figure 66 shows that cantilevered substrate 801 receives an acceleration from the top and the situation when moving down.In this case, substrate 801 moves along the inside surface of lower stop piece.
Semiconductor acceleration sensor of the present invention was done a kind of like this antidetonation experiment.It is long that the Sensor section of semiconductor acceleration sensor of the present invention is of a size of 8mm, and 1mm is wide and 0.6mm is thick.The thickness of diffusion resistance part is 80 μ m.When the semiconductor acceleration sensor with this specification receives one for example during the vibration of 100G, the maximum displacement of semiconductor acceleration sensor end is 12 μ m.Because this semiconductor acceleration sensor is used for detecting gravity, the acceleration detection specification of its design is 1G.In this case, the maximum displacement of semiconductor acceleration sensor is less than 1 μ m.Therefore, because the structure of catch can strengthen anti-seismic performance, has 2 μ m just enough in the end and the gap between the catch of acceleration transducer top offset maximum, however, but very difficult during fabrication, acceleration transducer of the present invention has adopted the gap of 10 μ m.Manufacture like this with the contacted surface of silicon chip on the catch, even it possesses the curve form that meets the deflection curve equation.
To acceleration transducer, the synthetic material that uses among this bonding agent and the present invention is identical, so that make the thermal expansivity of catch and acceleration transducer consistent with adhesive for catch.This method can prevent the influence of the thermal stress on the diffusion resistance, and can prevent the influence of temperature drift.
When the shock resistance of acceleration transducer of the present invention was measured, even apply the vibration of 3000G, speed pickup of the present invention can not damage yet.
[embodiment 23]
Figure 67 is a perspective view of the embodiment of the invention 22.In this example, used silicon in the test section of acceleration transducer.Silicon is the excellent material that is used as elastic component, and has the better elastic characteristic.If an otch is formed at the bottom at its cantilever, and on otch top diffusion resistance is set, downward displacement is just big, and the displacement that makes progress is just little.Therefore, a catch only is set in the present embodiment above diffusion resistance.Even adopt this structure, still can improve shock resistance.Do like this and can reduce cost of products.
[embodiment 24]
Figure 68 is the perspective view of the embodiment of the invention 24.In this example, the diffusion resistance 805 that is used to detect displacement is arranged on a side of the sense of displacement that acceleration causes.When diffusion resistance is arranged on this side, can prevents the thermal stress that on diffusion resistance, produces owing to catch, and prevent to cause temperature drift.In the present invention, when the diffusion resistance that is used to detect displacement is set at this side, be used to prevent that the catch that damages and the contact point of silicon chip are positioned near the diffusion resistance.
In this example, thin the diffusion resistance part does not resemble in embodiment 22 and 23, and in this example by expecting further to strengthen shock resistance.The semiconductor acceleration sensor of present embodiment has 8mm long, and 1mm is wide and 0.2mm is high, and its shock resistance can be brought up to 4000G.
[embodiment 25]
In embodiment 25 a kind of structure will be described, wherein the side of diffusion resistance is facing to support substrates.
Figure 69 shows this embodiment of semiconductor acceleration sensor of the present invention, and Figure 69 A wherein is a front elevation, and Figure 69 B is a planimetric map.
Followingly this structure is described with reference to Figure 69.On the substrate of silicon system, form a thin part, and diffusion resistance 3 is set thereon, be used for the stress transmission that displacement causes is become electric signal.Cantilever acceleration sensor element 1001 is to install like this, is about to the diffusion resistance side facing to terminal block 5.Weldering alkynes 1006 is formed on parts 1002 (welding important actor) and locates, on acceleration sensor element, make it form the lead-out terminal of a supporter and electric signal by the welding block operation in advance, acceleration sensor element 1 is installed on terminal block 5, so just can easily constitutes sensor.
The following manufacturing process that acceleration transducer of the present invention is described with reference to Figure 71.
Figure 71 A to 71C is a front elevation, and Figure 71 D and 71E are planimetric maps.
At first make a terminal block 5, be used for drawing electric signal from the terminal 7 that is located on the shell 1010, shell shell 1010 is used to protect acceleration transducer and is supporting acceleration sensor element 1.In the present invention, lead 11 is to make by being contained in gold thread on glass (chromium base).The thickness of lead film is the chromium of 1000 dusts and the gold of 1000 dusts, and this film forms by sputter.Be used for the welding important actor figure of support terminals 1012, lead 1011 and acceleration sensor element 1001 are formed within the wire pattern.
Then form diffusion resistance, and utilize semiconductor technology to form lead and dielectric film, just made acceleration sensor element 1001 by modes such as conventional ion injections.Can form amplifying circuit and temperature-compensation circuit as required.In the present embodiment,, utilized welding block technology, and originally formed the welding important actor on one's body at element for the welding important actor that is installed on the terminal block 1005 is installed on the acceleration sensor element 1001.Utilize welding block technology to form the welding important actor, thereby acceleration sensor element 1001 is contained on the terminal block 1005.Because what the figure in terminal block used is gold thread, it is well suited for welding, only need be elevated to temperature about 200 ℃ just can be welded to acceleration sensor element 1001 on the terminal block 1005.
Method of the present invention can also utilize the alignment function of base self to realize accurately location.Owing to need between acceleration sensor element 1001 and terminal block 1005, keep the gap, use a native copper figure of in the process that forms welding block, making in the present embodiment.The thickness of copper figure is used to control the gap between acceleration sensor element 1001 and the terminal block 1005.Because the copper figure is when forming with craft of gilding, can be clearance control in the millimeter level.
In the present embodiment, be to manufacture acceleration transducer according to the precision that detects the 1G acceleration.Because its maximum displacement less than 10 microns, makes it have the copper coating of 10 micron thickness when manufacturing.The temperature that makes scolder 1014 is from 200 ℃ of declines, and is welded together acceleration transducer 1001 and terminal block 1005.Scolder flows on the golden figure on the terminal block, and forms and keep above-mentioned gap with remaining copper.The whole plate of acceleration transducer is bonded on the shell 1010, the terminal 7 that utilizes wire bonds 1013 to connect to be located on the shell 1010, and be stained with the lid of shell 1010, just made acceleration transducer.
When the acceleration transducer of making in to present embodiment carried out the shock resistance measurement, acceleration transducer of the present invention did not damage when the vibration that applies 4000G.
[embodiment 26]
In embodiment 25, illustrated and on acceleration sensor element 1001, formed a scheme that is used as the welding block 1006 of welding important actor and supporter.In the sensor method for production of embodiment 26, welding block is formed on the terminal block 1005, and acceleration transducer is fixed on the terminal block, thereby makes sensor.
Below in conjunction with Figure 73 this is illustrated.
At first, the first step is to form one deck chromium film on whole glass substrate upper surface, forms one deck copper film thereon again, forms lead with typography then.Second step was to form the welding important actor, was used for acceleration sensor element 1 and welding block are fixed on the pad that is used for extracting from acceleration sensor element 1 electric signal.In these steps, just can make terminal block 5.Figure 74 is by welding block technology welding important actor 1002 that forms and the enlarged drawing of exporting weld tabs.
Concerning acceleration sensor element 1001, form diffusion resistance 1003 and amplifying circuit therein with semiconductor technology in advance.The thin position that is used to improve sensitivity can form with etching.The 3rd step was that terminal block 1005 and the acceleration sensor element 1001 of utilizing semiconductor technology to make are fixed together.
The following method that terminal block 1005 and the acceleration sensor element 1001 of utilizing semiconductor technology to make are fixed together that illustrates with reference to Figure 74 and 75.
Be placed on 1001 on the terminal block 1005 and (see Figure 75).When it is heated to after 200 ℃, scolder flows out.Scolder 1014 flows on the metal part, and this metal partly is patterned on acceleration sensor element in advance, and scolder is positioned and fixed by Automatic Levelling.The terminal block 1005 that is equiped with acceleration sensor element 1 is fixed within the shell 1010, by wire bonds the terminal 1013 in the terminal block 1005 is connected to the terminal 1007 that is located on the shell, so that provide electric signal to the external world.The manufactured goods of acceleration transducer are covered fully and are sealed in the shell 1010.
[embodiment 27]
Although be the formation method that adopts welding block technology to be used as welding important actor in example 26 and 27, in embodiment 27, then adopted thick-film resistor 1016 to form the welding important actor.
The following method that forms the welding important actor with resistance 1016 that illustrates with reference to Figure 76.The first step is to go up at substrate (being glass) with conductor material (using aluminium in this example) to form conductor layer, and forms required wire pattern with typography on substrate.Second step was to form one deck thick-film resistor 1016 with rotary spraying.
At this moment, need the coating of controlling resistance, make it have homogeneous thickness, because the thickness of resistance is very important to anti-seismic structure.Then carry out composition, form the shape of welding important actor.The 3rd step was fixing acceleration sensor element 1001.Next carry out soft heat weldering (reflow), so that connect lead-out terminal.Use thick-film resistor 1016 can be so that manufacture acceleration transducer.When the acceleration transducer to present embodiment carried out the antidetonation test, it can bear the vibrations of 4000G.
[embodiment 28]
In this embodiment, the diffusion resistance of element side is installed on the acceleration detection direction, thereby makes diffusion resistance facing to support substrates.Similar with embodiment 25, welding block 1006 is pre-formed on position 1002 (welding important actor), and the latter is the supporter and the electric signal terminal of acceleration sensor element 1.Then can be placed on acceleration transducer 1001 on the terminal block 1005, just make sensor.
[embodiment 29]
The method that counterweight is installed will be described in the present embodiment.
The method of installation counterweight hereto is metal alkynes to be adhered on the end of element with glue, shown in Figure 77, acceleration sensor element 1101 is inserted melts 110 2 and extracts with anchor clamps 1003, thereby provide melt endways.This method can be convenient to install the counterweight 1104 of same weight.Figure 78 A is the enlarged drawing of counterweight.In Figure 78 B, used a shapes of containers that is used to form counterweight 1104.Melt 1102 is charged into container, just can form the counterweight of required form, promptly sensor element 1101 is inserted box 1106, and after melt condenses, element is taken out.
In this method, condense and the phenomenon weight that contacts is used to prevent damage.Below this is explained.Shell body 1105 among Figure 79 is used to the part as counterweight 1104 is immersed melt 1102, referring to Figure 77.Melt 1102 condenses along with it and contacts, and forms the gap between shell body.This gap is subjected to displacement acceleration transducer when receiving acceleration, and prevents its over-travel when it when shell body 1105 receives excessive acceleration.
[embodiment 30]
To illustrate in the present embodiment acceleration transducer is connected to example on the chip of micro-computer 1201.Figure 80 shows a common chip of micro-computer, cuts the edge of chip of micro-computer with methods such as cuttings, and is fixed as shown in the figure, need not cut its end.This method can be made the acceleration transducer with stiff end.The E2PROM or the EPROM that comprise the self-adjusting function are used as chip of micro-computer 1201.
Present embodiment is convenient to manufacture acceleration transducer, comprising microcomputer.
If adopt above-mentioned structure, the present invention has following effect:
1) because the diffusion resistance part on the forward and backward two sides of semiconductor acceleration sensor all is flat, and the diffusion resistance part is quite well, and device is made easily.This device does not need complicated technology and has very strong shock resistance;
2) because Semiconductor substrate is thicker, the skew of thickness is less, and can make the output offset of acceleration transducer individual devices less;
3) be convenient to finely tune from the outside;
4) can provide high-precision device;
5) owing on Semiconductor substrate, can make many acceleration sensor element, can provide acceleration transducer cheaply
6) because the diffusion resistance part does not need attenuation, can shorten process time, also can reduce cost thus;
7) because compression and drawing stress are simultaneously-measured, can obtain accurate device; And
8) can obtain double-axel acceleration sensor by thickness and the width of adjusting chip.
Semiconductor pressure sensor comprises porose substrate, side at substrate constitutes a diaphragm, a supporter is used in impermeability cabin of the inner formation of substrate, be used to extract the output device of the electrical signal of electric signal, and sensor element that is located on the diaphragm, this element comprises the diffusion resistance that is used to detect diaphragm deformation, be used for mechanically deform is converted to electric signal, the testing circuit of sensor element is a bridge circuit, and diffusion resistance is arranged on the position perpendicular with diaphragm, thereby makes this semiconductor pressure sensor have following effect:
1) owing to can obtain many pressure sensor components, can provide pressure transducer cheaply with a Semiconductor substrate;
2) owing to comprise that the pressure detection of diffusion resistance and pressure reference chamber partly separately manufactures, can simplify processing step, reduce manufacturing cost thus; And
3) because compression and drawing stress detect simultaneously, can provide the device of high output sensitivity.
[catch]
One owing to be located at the catch that is used to limit the cantilever displacement on the supporter and have and be subjected to acceleration with cantilever and make the structure that the deformed shape of time spent adapts, and this baffle plate has following effect;
One owing to be used for preventing that the catch that damages from having discharged vibrations by face with contacting of face, even also can prevent to damage when excessive acceleration occurring, thereby improved reliability; And
One owing to do not need the impact mitigation measure of silicone oil one class, can reduce the manufacturing cost of semiconductor acceleration sensor.
[diffusion resistance is installed facing to support substrates]
Can obtain following effect by cantilever mounted and supporter, thereby the side of diffusion resistance is fixed on the supporter:
One can reduce manufacturing cost and improve anti-seismic performance; And
One because the circuit that comprises diffusion resistance is to support and the substrate of connection function facing to having, and is convenient to extract electric signal.

Claims (33)

1. a semiconductor devices that comprises semiconductor acceleration sensor is made of a cantilever and the supporter that supports above-mentioned cantilever, and above-mentioned cantilever wherein is a column.
2. a semiconductor devices that comprises semiconductor medium velocity sensor is made of a cantilever and the supporter that supports above-mentioned cantilever, and above-mentioned cantilever wherein has the plane of a single thickness.
3. according to the semiconductor devices of claim 2, it is characterized in that having and the identical diffusion resistance of last art cantilever thickness, be used to detect stress.
4. according to the semiconductor devices of claim 2, the means that it is characterized in that being used for above-mentioned cantilever and above-mentioned supporter are fixed together are a kind of polymeric materials.
5. according to the semiconductor devices of claim 2, the means that it is characterized in that being used for above-mentioned cantilever and above-mentioned supporter are fixed together are a kind of metal materials.
6. according to the semiconductor devices of claim 2, the means that it is characterized in that being used for above-mentioned cantilever and above-mentioned supporter are fixed together are a kind of mechanical hook-ups.
7. according to the semiconductor devices of claim 2, it is characterized in that being used for the means that above-mentioned cantilever and above-mentioned supporter are fixed together is a kind of anode welding.
8. according to the semiconductor devices of claim 2, it is characterized in that above-mentioned cantilever has the circuit of a CMOS structure.
9. according to the semiconductor devices of claim 2, it is characterized in that above-mentioned cantilever has a temperature-compensation circuit.
10. according to the semiconductor devices of claim 2, it is characterized in that above-mentioned cantilever has an amplifying circuit.
11., it is characterized in that above-mentioned cantilever has the resistance that is used to adjust output voltage according to the semiconductor devices of claim 2.
12., it is characterized in that on the above-mentioned cantilever counterweight being arranged according to the semiconductor devices of claim 2.
13. the manufacture method of a semiconductor devices that comprises semiconductor acceleration sensor that is made of cantilever and supporter is characterized in that the resistance that is used to adjust output voltage is adjusted.
14. the manufacture method of a semiconductor devices that comprises semiconductor acceleration sensor that is made of cantilever and supporter is characterized in that counterweight is adjusted.
15. a semiconductor devices that comprises semiconductor acceleration sensor is made of a semiconductor element and a supporter, it is characterized in that, above-mentioned supporting substrate is connected to above-mentioned semiconductor element, a terminal substrate is connected to above-mentioned supporting substrate, and has a glass tube to be connected to above-mentioned terminal substrate.
16. the manufacture method by the semiconductor devices that comprises semiconductor acceleration sensor that semiconductor element and supporter constitute may further comprise the steps:
Above-mentioned supporting substrate and a terminal substrate are linked together;
Above-mentioned terminal substrate and a glass tube are linked together; And
Adjust above-mentioned semiconductor element with laser.
17. a semiconductor devices comprises the semiconductor acceleration sensor that is made of cantilever and supporter, acceleration detection direction one side on cantilever has a zone that is used for sense acceleration.
18. the semiconductor devices that comprises semiconductor acceleration sensor according to claim 17, it is characterized in that near the end face of Semiconductor substrate, having first diffusion resistance, and near the bottom surface of above-mentioned Semiconductor substrate, has second diffusion resistance, above-mentioned first diffusion resistance and second diffusion resistance constitute a bridge circuit, are used for compression stress and drawing stress that sense acceleration causes above-mentioned cantilever.
19. manufacture method that comprises the semiconductor devices of semiconductor acceleration sensor, semiconductor acceleration sensor comprises a cantilever of being made by Semiconductor substrate, the one end is by support body supports, and near the diffusion resistance of supporter that is located at above-mentioned cantilever, and this method may further comprise the steps:
Cut above-mentioned Semiconductor substrate with cutting method; And
Above-mentioned cantilever side at above-mentioned semiconductor acceleration sensor forms said elements.
20. a semiconductor devices that comprises semiconductor acceleration sensor, acceleration transducer comprise a cantilever, cantilever has the flat horizontal surface of a single thickness, and a supporter, and o pads wherein partly is arranged embarks on journey.
21. semiconductor devices that comprises semiconductor pressure sensor, it is characterized in that comprising: one has the substrate of diaphragm, one forms the substrate in impermeability cabin in described substrate position, an and sensor element, in order to change mechanically deform into electric signal, between described sensor element and described substrate, has a junction branch.
22. semiconductor devices that comprises semiconductor pressure sensor; It is characterized in that comprising a substrate 702 with diaphragm 704; A substrate; It forms an air-tightness cabin at a position of above-mentioned substrate; Output device of the electrical signal; Be used for extracting the signal of telecommunication; And sensor element that is located on the above-mentioned diaphragm; Sensor element comprises the diffusion resistance for detection of the distortion of above-mentioned diaphragm; In order to mechanically deform is converted to the signal of telecommunication; The detection circuit of the sensor element is made of a bridge-type circuit
The diffusion resistance of the sensor element is located at a side of the sensor element, and this lateral vertical is in the surface of contact of the sensor element and above-mentioned substrate.
23. according to the semiconductor devices of claim 22, it is characterized in that above-mentioned diffusion resistance is made of a bridge circuit that comprises diffusion resistance, and detect because compression that distortion caused and the drawing stress that pressure produces the sensor element.
24. according to the semiconductor devices of claim 22, it is characterized in that above-mentioned diffusion resistance is made of a bridge circuit that comprises diffusion resistance, and above-mentioned diffusion resistance is positioned at a side of exerting pressure, and above-mentioned diffusion resistance is located at a side of diaphragm.
25., it is characterized in that an edge of the sensor element is fixed on the above-mentioned substrate according to the semiconductor devices of claim 22.
26. manufacture method that comprises the semiconductor devices of semiconductor pressure sensor, pressure transducer has the substrate of a band diaphragm, form the substrate in impermeability cabin at a position of above-mentioned substrate, output device of the electrical signal, and sensor element on being located in the above-mentioned film, sensor element is made of the diffusion resistance of the distortion that is used to detect above-mentioned diaphragm, so that mechanically deform is converted to electric signal, this method comprises:
At first on above-mentioned Semiconductor substrate, be formed for the above-mentioned diffusion resistance of detected pressures, be used for the output of output resistance, and lead;
Second step was to cut the sensor from above-mentioned Semiconductor substrate; And
The 3rd step was that the sensor element is welded on the above-mentioned substrate.
27. the manufacture method of a semiconductor devices is characterized in that the sensor element is polished, so that reduce its thickness after above-mentioned the 3rd step.
28. a semiconductor devices has the substrate of a band opening, a sensor element that meshes with above-mentioned opening, be used for mechanically deform is converted to electric signal, a substrate, be used for forming an impermeability cabin at a position of above-mentioned substrate, and the output device of the electrical signal that is used to extract electric signal
The testing circuit of the sensor element is made of a bridge circuit,
The position of above-mentioned diffusion resistance is perpendicular in the above-mentioned film.
29. semiconductor devices that comprises semiconductor acceleration sensor, it is characterized in that comprising a cantilever of making by semiconductor chip, the one end is supported on the supporter that supports above-mentioned cantilever, and be located at diffusion resistance on the above-mentioned cantilever, be used to detect displacement, and comprise the acceleration detecting that is used to detect displacement, it detects displacement according to the resistance change of above-mentioned diffusion resistance according to acceleration, and be located at catch on the above-mentioned supporter, be used to limit the displacement of above-mentioned cantilever
When distortion appearred in above-mentioned cantilever, the profile of above-mentioned catch and above-mentioned cantilever matched.
30., it is characterized in that the part to above-mentioned cantilever is identical with the distortion curved surface of above-mentioned cantilever above the above-mentioned catch according to the semiconductor devices of claim 29.
31. semiconductor devices that comprises semiconductor acceleration sensor, it is characterized in that comprising a cantilever of making by semiconductor chip, the one end is supported on the supporter that supports above-mentioned cantilever, be located at the diffusion resistance on the above-mentioned cantilever, be used for detecting displacement and acceleration by acceleration detecting, acceleration detecting detects displacement according to the variation of the resistance value of above-mentioned diffusion resistance according to acceleration
Above-mentioned cantilever and above-mentioned supporter are fixed together, thereby above-mentioned diffusion resistance side and above-mentioned supporter are fixed.
32., it is characterized in that a gap is arranged between above-mentioned diffusion resistance and above-mentioned supporter according to the semiconductor devices of claim 31.
33. the semiconductor devices according to claim 31 is characterized in that, the electric signal that is produced by above-mentioned diffusion resistance is extracted by the lead that is located on the above-mentioned supporter, and lead is installed when fixing above-mentioned cantilever and above-mentioned supporter.
CN 95116390 1995-08-24 1995-08-24 Semiconductor acceleration sensor Pending CN1143749A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 95116390 CN1143749A (en) 1995-08-24 1995-08-24 Semiconductor acceleration sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 95116390 CN1143749A (en) 1995-08-24 1995-08-24 Semiconductor acceleration sensor

Publications (1)

Publication Number Publication Date
CN1143749A true CN1143749A (en) 1997-02-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN 95116390 Pending CN1143749A (en) 1995-08-24 1995-08-24 Semiconductor acceleration sensor

Country Status (1)

Country Link
CN (1) CN1143749A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102840937A (en) * 2011-06-24 2012-12-26 日本电波工业株式会社 External force detection apparatus and external force detection sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102840937A (en) * 2011-06-24 2012-12-26 日本电波工业株式会社 External force detection apparatus and external force detection sensor
US8890391B2 (en) 2011-06-24 2014-11-18 Nihon Dempa Kogyo Co., Ltd. External force detection apparatus and external force detection sensor

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