CN114369868B - Crystal bar broken line monitoring method, storage medium, terminal and crystal pulling equipment - Google Patents
Crystal bar broken line monitoring method, storage medium, terminal and crystal pulling equipment Download PDFInfo
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- CN114369868B CN114369868B CN202210033282.XA CN202210033282A CN114369868B CN 114369868 B CN114369868 B CN 114369868B CN 202210033282 A CN202210033282 A CN 202210033282A CN 114369868 B CN114369868 B CN 114369868B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention provides a crystal bar wire breakage monitoring method, a storage medium, a terminal and crystal pulling equipment, and belongs to the field of semiconductor quantity detection, wherein the method comprises the steps of image acquisition and judgment of a current crystal pulling stage, positioning of a target area R of an aperture at the adjacent surface, extraction of a target outline, calculation of a point on the outline, calculation of an angle difference, comparison of the angle difference and judgment of whether wire breakage exists or not; the method judges whether the crystal bar is broken or not by comparing the angle difference on the contour line with the threshold value, quickly and accurately obtains the judgment result based on image processing, provides an auxiliary judgment basis for stabilizing the crystal pulling state, improves the crystal pulling quality and is convenient to popularize and apply in the field of semiconductor manufacturing.
Description
Technical Field
The invention belongs to the field of semiconductor volume detection, and particularly relates to a crystal bar wire breakage monitoring method, a storage medium, a terminal and crystal pulling equipment.
Background
Monocrystalline silicon is the initial material of the semiconductor industry at present, so the quality control thereof is very important. Whether the crystal bar is broken or not is an important means for controlling the crystal pulling quality in the process of preparing the monocrystalline silicon.
The traditional crystal bar wire breakage state judgment adopts a circuit closed loop to judge and adopts PLC automatic control, however, the method can not judge the generation of polycrystalline silicon, thereby causing the problem that the quality of monocrystalline silicon can not be accurately controlled.
At present, a machine vision-based detection method is also provided, which detects the crystal line of the optical ring and judges whether the line is broken or not according to the characteristics of the crystal line, however, the method is not direct and has errors.
Therefore, a reliable and accurate intelligent quantity detection scheme needs to be designed for whether the crystal bar is broken in the crystal pulling process.
Disclosure of Invention
In order to overcome the disadvantages of the prior art, the invention aims to provide a crystal rod disconnection monitoring method, a storage medium, a terminal and a crystal pulling device, which can solve the problems.
An angle difference-based crystal bar wire breakage monitoring method comprises the following steps:
s1, acquiring images and judging the current crystal pulling stage, and acquiring images in a crystal pulling furnace through multiple exposure of a monitoring camera;
s2, positioning a target area R of the diaphragm at the adjacent surface;
s3, extracting a target contour C;
s4, calculating points on the contour and calculating an angle difference;
and S5, comparing the angle difference to judge whether the wire is broken or not.
Further, when the pull-up stage is determined to be the shouldering stage, the calculation of the angular difference in step S4 includes:
s41, coordinate conversion, namely, carrying out polar coordinate conversion on the target profile C under the rectangular coordinate system to obtain the circular arc profile C under the polar coordinate system 1 ；
S42, circular arc profile C in polar coordinates 1 Collecting a plurality of points;
s43, calculating the adjacent points and seatsAngle theta of axis 1,2 、θ 2,3 、…θ i-1,i …、θ n-1,n (ii) a n is a positive integer of 5 or more.
S44, calculating an angle difference theta 'of adjacent angles' i The following:
θ′ i ＝θ i+1,i+2 -θ i,i+1 … … … … … … … … … … formula 1.
Further, when the crystal pulling stage is judged to be the shouldering stage, the angle difference comparison in the step S5 adopts double-angle threshold judgment, and the judgment principle is as follows:
where AngleMin is the angle low threshold and AngleMax is the angle high threshold.
Further, when the crystal pulling stage is determined to be the constant diameter stage, the calculation of the angular difference in step S4 includes:
s41, extracting a plurality of contour points in the current coordinate system on the target contour C;
s42, calculating the angle difference theta 'between the adjacent points of the plurality of contour points' i And i is a positive integer greater than or equal to 2.
Further, when the crystal pulling stage is determined as the equal diameter stage, the angular difference comparison in step S5 is determined by using a single angular threshold, and the determination principle is as follows:
wherein AngleThreshold is the single angle threshold.
The present invention also provides a computer readable storage medium having stored thereon computer instructions which, when executed, perform the steps of the aforementioned method.
The invention also provides a terminal, which comprises a memory and a processor, wherein the memory stores an angle low threshold value AngleMin, an angle high threshold value AngleMinx, a single angle threshold value AngleThreshold angle threshold value and a computer instruction capable of being operated on the processor, and the processor executes the steps of the method when executing the computer instruction.
The invention also provides crystal pulling equipment, which comprises a furnace body, a rotary crucible, a crystal pulling unit, a state monitoring unit, a feeder and a controller, wherein the feeder penetrates through the furnace body and is arranged towards the rotary crucible; the controller is used for controlling the crucible rotating speed, the crystal pulling rope movement, the silicon material molten state image receiving processing and the charging requirement, and calculating the angle difference theta 'by the method' i Whether the crystal bar is broken in the crystal pulling stage process is judged through threshold value comparison, and the crystal pulling unit is controlled to melt the broken crystal bar back and pull the crystal bar again after the broken crystal bar is judged to be broken, so that stable crystal pulling quality is guaranteed.
Compared with the prior art, the invention has the beneficial effects that: the method judges whether the crystal bar is broken or not by comparing the angle difference on the contour line with the threshold value, quickly and accurately obtains the judgment result based on image processing, provides an auxiliary judgment basis for stabilizing the crystal pulling state, improves the crystal pulling quality and is convenient to popularize and apply in the field of semiconductor manufacturing.
Drawings
FIG. 1 is a flow chart of an angle difference-based crystal bar breakage monitoring method of the present invention;
FIG. 2 is a schematic diagram of an in-furnace image at the shouldering stage;
FIG. 3 is a schematic diagram of an image of a target area in a shoulder-down stage;
FIG. 4 is a schematic diagram of the target profile at the shoulder-down stage;
FIG. 5 is a schematic diagram of polar coordinate transformation of the profile at the shouldering stage;
FIG. 6 is a schematic view of the calculation of the angle difference at the shoulder-on stage;
FIG. 7 is a schematic diagram showing the result of determining whether the ingot is broken during the shouldering stage;
FIG. 8 is a schematic view of an isometric stage in-furnace image;
FIG. 9 is a schematic diagram of the extraction of the target region R in the equal-diameter stage;
FIG. 10 is a schematic diagram of contour extraction of an object at an equal-diameter stage;
FIG. 11 is a schematic view showing the judgment of the ingot at the equal diameter stage as being not broken;
FIG. 12 is a schematic view of a crystal puller.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
It should be understood that "system", "apparatus", "unit", "terminal", and/or "module" as used herein is a method for distinguishing different components, elements, components, parts, or assemblies at different levels. However, other words may be substituted by other expressions if they accomplish the same purpose.
Flow charts are used in this description to illustrate operations performed by a system according to embodiments of the present description. It should be understood that the preceding or following operations are not necessarily performed in the exact order in which they are performed. Rather, the steps may be processed in reverse order or simultaneously. Meanwhile, other operations may be added to the processes, or a certain step or several steps of operations may be removed from the processes.
First embodiment
An angle difference-based crystal bar wire breakage monitoring method is disclosed, and referring to fig. 1, the method comprises the following steps:
s1, acquiring images and judging the current crystal pulling stage, and acquiring images in a crystal pulling furnace through multiple exposure of a monitoring camera; generally, the broken line monitoring of the crystal bar needs to be carried out in a shouldering stage and an equal diameter stage.
S2, positioning a target area R of the diaphragm at the adjacent surface; the method comprises the steps of firstly carrying out ROI (region of interest) processing to position a bright area image at the adjacent surface of a crystal bar and a silicon material melt so as to narrow the image range, and then carrying out threshold segmentation to obtain a target area R.
And S3, extracting a target contour C.
And S4, calculating points on the contour and calculating an angle difference.
And S5, comparing the angle difference to judge whether the wire is broken or not.
Example one, ingot break monitoring at shouldering stage.
S1, image acquisition; see figure 2 for an in-furnace image of the shouldering stage.
S2, positioning a target area R of the diaphragm at the adjacent surface; first, ROI processing is performed to position the bright area image at the adjacent surface of the ingot and the molten silicon material to narrow the image range, and then threshold segmentation is performed to obtain the arc-shaped target area R, as shown in fig. 3.
And S3, extracting a target contour C, and referring to FIG. 4.
And S4, calculating points on the contour and calculating an angle difference.
S41, coordinate conversion, referring to FIG. 5, polar coordinate conversion is carried out on the target contour C under the rectangular coordinate system to obtain the circular arc contour C under the polar coordinate system 1 ；
S42, in a circular arc outline C of polar coordinates 1 Collecting a plurality of points;
s43, calculating the angle theta between every two adjacent points and the coordinate axis 1,2 、θ 2,3 、…θ i-1,i …、θ n-1,n (ii) a n is a positive integer of 5 or more.
S44, calculating an angle difference theta 'of adjacent angles' i The following were used:
θ′ i ＝θ i+1,i+2 -θ i,i+1 … … … … … … … … … … formula 1.
A schematic diagram of the angular difference calculation is shown in fig. 6. Taking four points 1/2/3/4 around the protruding portion as an example, two angular differences θ' 1 And θ' 2 。
And S5, comparing the angle difference to judge whether the wire is broken or not. In the shouldering stage, the angle difference comparison in the step S5 adopts double-angle threshold judgment, and the judgment principle is as follows:
where AngleMin is the angle low threshold and AngleMax is the angle high threshold.
Corresponding to the conventional vision, the judgment is performed by taking the edge of the edge line as the edge line for judging the broken line of the crystal bar in the shouldering stage, referring to fig. 7.
The ridge line is not broken: detection is carried out in a bright area, and the transition of the growing edge and the protruding part is steep, as shown by a line frame marked 1 in FIG. 7;
breaking the ridge: the detection is performed in the bright areas and the growing edge transitions smoothly with the protrusion, as shown by the line frame labeled 2 in fig. 7.
Example two, ingot break monitoring at the equal diameter stage.
S1, image acquisition; see figure 8 for an in-furnace image of the isometric stage.
S2, positioning a target area R of the diaphragm at the adjacent surface; first, ROI processing is performed to position the bright area image at the adjacent surface of the ingot and the molten silicon to narrow the image range, and then threshold segmentation is performed to obtain the target area R, see fig. 9.
And S3, extracting a target contour C, see FIG. 10.
S4, calculating points on the contour and calculating an angle difference, specifically:
s41, extracting a plurality of contour points in the current coordinate system on the target contour C;
s42, calculating the angle difference theta 'between adjacent points of the plurality of contour points' i And i is a positive integer greater than or equal to 2.
In this case, the polar coordinate conversion is not performed, but it is also possible to perform the polar coordinate conversion or other coordinate conversion as in the first example, and the coordinate conversion is not performed here because the included angle is directly calculated by the cartesian coordinate system more suitable for the local calculation.
And S5, comparing the angle difference to judge whether the wire is broken or not. In the equal-diameter stage, the angular difference comparison in the step S5 adopts single-angle threshold judgment, and the judgment principle is as follows:
wherein AngleThreshold is the single angle threshold.
Referring to fig. 11, the result of the isometric step crystal judgment is a schematic diagram showing that the line is not broken.
Second embodiment
The present invention also provides a computer readable storage medium having stored thereon computer instructions which, when executed, perform the steps of the aforementioned method. For details, the method is described in the foregoing section, and is not repeated here.
It will be appreciated by those of ordinary skill in the art that all or a portion of the steps of the various methods of the embodiments described above may be performed by associated hardware as instructed by a program that may be stored on a computer readable storage medium, which may include non-transitory and non-transitory, removable and non-removable media, to implement information storage by any method or technology. The information may be computer readable instructions, data structures, modules of a program, or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static Random Access Memory (SRAM), dynamic Random Access Memory (DRAM), other types of Random Access Memory (RAM), read Only Memory (ROM), electrically Erasable Programmable Read Only Memory (EEPROM), flash memory or other memory technology, compact disc read only memory (CD-ROM), digital Versatile Disks (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices, or any other non-transmission medium, which can be used to store information that can be accessed by a computing device. As defined herein, a computer readable medium does not include a transitory computer readable medium such as a modulated data signal and a carrier wave.
Third embodiment
The invention also provides a terminal, which comprises a memory and a processor, wherein the memory stores the angle low threshold value Anglemn, the angle high threshold value Anglemax, the single angle threshold value AngleThreshold angle threshold value and a computer instruction capable of being operated on the processor, and the processor executes the steps of the method when the computer instruction is operated. For details, the method is described in the foregoing section, and is not repeated here.
Fourth embodiment
A crystal pulling apparatus, see FIG. 12, includes a furnace body 100, a rotating crucible 200, a crystal pulling unit 300, a condition monitoring unit 400, a feeder 500, and a controller 600.
The feeder 500 passes through the furnace body 100 and is arranged towards the rotary crucible 200, the crystal pulling unit 300, the state monitoring unit 400 and the feeder 500 are in telecommunication controllable connection with the controller 600, and the monitoring camera of the state monitoring unit 400 collects images in the furnace body 100 through multiple exposure.
The controller 600 is used for controlling the crucible rotation speed, the crystal pulling rope movement, the silicon material molten state image receiving processing and the charging demand, and calculating the angle difference theta 'by the method of the first embodiment' i Whether the crystal bar is broken in the crystal pulling stage is judged through threshold value comparison, and the crystal pulling unit 300 is controlled to melt back the crystal bar in the broken section for crystal pulling again after the fact that the breakage occurs is judged, so that stable crystal pulling quality is guaranteed.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, apparatus, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (5)
1. A method for monitoring broken lines of a crystal bar based on angle difference is characterized in that a crystal pulling stage of broken line monitoring of the crystal bar comprises a shouldering stage and an equal diameter stage, and the method comprises the following steps:
s1, acquiring images and judging the current crystal pulling stage, and acquiring images in a crystal pulling furnace through multiple exposure of a monitoring camera;
s2, positioning a target area R of the diaphragm at the adjacent surface;
s3, extracting a target contour;
s4, calculating points on the contour and calculating an angle difference; when the pull-up stage is determined to be the shouldering stage, the calculation of the angular difference in step S4 includes:
s41, coordinate conversion is carried out, polar coordinate conversion is carried out on the target contour C under the rectangular coordinate system to obtain the circular arc contour C under the polar coordinate system 1 ；
S42, in a circular arc outline C of polar coordinates 1 Collecting a plurality of points;
s43, calculating the angle theta between every two adjacent points and the coordinate axis 1,2 、θ 2,3 、…θ i-1,i …、θ n-1,n (ii) a n is a positive integer greater than or equal to 5;
s44, calculating the angle difference of the adjacent angles
The following were used:
when the crystal pulling stage is determined to be the equal diameter stage, the calculation of the angular difference in step S4 includes:
s41, extracting a plurality of contour points in the current coordinate system on the target contour C;
s42, calculating the angle difference between the adjacent points of the contour points
I is a positive integer greater than or equal to 2;
s5, comparing the angle difference to judge whether the wire is broken or not;
when the crystal pulling stage is judged to be the shouldering stage, the angular difference comparison in the step S5 adopts double-angle threshold judgment, and the judgment principle is as follows:
wherein Anglemn is an angle low threshold, and Anglemax is an angle high threshold;
when the crystal pulling stage is judged to be the equal diameter stage, the angular difference comparison in the step S5 adopts single-angle threshold judgment, and the judgment principle is as follows:
wherein AngleThreshold is the single angle threshold.
2. The method for monitoring the breakage of the crystal bar according to claim 1, wherein: when the crystal pulling stage is determined to be the shouldering stage or the constant diameter stage, the step S2 includes: the method comprises the steps of firstly carrying out ROI (region of interest) processing to position a bright area image at the adjacent surface of a crystal bar and a silicon material melt so as to narrow the image range, and then carrying out threshold segmentation to obtain a target area R.
3. A computer-readable storage medium having stored thereon computer instructions, characterized in that: the computer instructions when executed perform the steps of the method of claim 1 or 2.
4. A terminal comprising a memory and a processor, characterized in that: the memory has stored thereon an angle low threshold value AngleMin, an angle high threshold value AngleMax, a single angle threshold value AngleThreshold angle threshold value, and computer instructions executable on the processor, the processor when executing the computer instructions performing the steps of the method of claim 1 or 2.
5. A crystal pulling apparatus, comprising: the crucible pulling device comprises a furnace body (100), a rotary crucible (200), a crystal pulling unit (300), a state monitoring unit (400), a feeder (500) and a controller (600), wherein the feeder (500) penetrates through the furnace body (100) and is arranged towards the rotary crucible (200), the crystal pulling unit (300), the state monitoring unit (400) and the feeder (500) are in telecommunication controllable connection with the controller (600), and a monitoring camera of the state monitoring unit (400) acquires images in the crystal pulling body (100) through multiple exposure; the controller (600) is used for controlling the crucible rotation speed, the crystal pulling rope movement, the silicon material molten state image receiving processing and the feeding requirement, and calculates the angle difference by the method of claim 1 or 2
Whether the crystal bar is broken in the crystal pulling stage is judged through threshold value comparison, and the crystal pulling unit (300) is controlled to melt back the crystal bar at the broken section for crystal pulling again after the fact that the breakage occurs is judged, so that stable crystal pulling quality is guaranteed.
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| CN202210033282.XA CN114369868B (en) | 2022-01-12 | 2022-01-12 | Crystal bar broken line monitoring method, storage medium, terminal and crystal pulling equipment |
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| CN115984276B (en) * | 2023-03-20 | 2023-05-16 | 内蒙古晶环电子材料有限公司 | Shoulder defect real-time detection method, device, computer equipment and storage medium |
| CN116342613B (en) * | 2023-06-01 | 2023-08-04 | 嘉兴视联智能科技股份有限公司 | Self-adaptive anti-interference machine vision detection method and system for monocrystalline silicon rod crystal line |
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| CN109112614A (en) * | 2017-06-23 | 2019-01-01 | 上海新昇半导体科技有限公司 | The test method and boule growth device of crystal bar |
| CN111690980A (en) * | 2019-03-11 | 2020-09-22 | 上海新昇半导体科技有限公司 | Crystal growth control method, device and system for shouldering process and computer storage medium |
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