CN114367488A - Wafer cleaning method and system - Google Patents
Wafer cleaning method and system Download PDFInfo
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- CN114367488A CN114367488A CN202210282300.8A CN202210282300A CN114367488A CN 114367488 A CN114367488 A CN 114367488A CN 202210282300 A CN202210282300 A CN 202210282300A CN 114367488 A CN114367488 A CN 114367488A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 385
- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000005520 cutting process Methods 0.000 claims abstract description 34
- 239000006227 byproduct Substances 0.000 claims abstract description 30
- 238000005507 spraying Methods 0.000 claims description 137
- 238000001035 drying Methods 0.000 claims description 48
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- 239000007921 spray Substances 0.000 claims description 29
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- 230000000694 effects Effects 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000009471 action Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 179
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 72
- 239000000243 solution Substances 0.000 description 15
- 239000007788 liquid Substances 0.000 description 9
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 5
- 239000003292 glue Substances 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000003698 laser cutting Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
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- 230000010354 integration Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
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- 239000011259 mixed solution Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/024—Cleaning by means of spray elements moving over the surface to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a wafer cleaning method and a wafer cleaning system. The wafer to be cleaned rotates at a low speed, and simultaneously, cleaning media are sprayed from the center to the edge of the wafer to be cleaned for multiple times according to time sequence, and by-products are gradually moved out of the edge of the wafer under the action of inertia, so that the purpose of cleaning the wafer is achieved, and the wafer to be cleaned is particularly suitable for cleaning the by-products on the surface of the wafer to be bonded after a chip cutting process.
Description
Technical Field
The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a wafer cleaning method and a wafer cleaning system.
Background
With the semiconductor technology entering the post-molarity, chip structures are developing towards three dimensions in order to meet the requirements of high integration and high performance. The method is characterized in that the 'heterogeneous mixing' is realized by a bonding technology, which is one of important technologies of 'supermolecule law', and the hybrid bonding technology can be used for carrying out high-density interconnection on chips in different process node processes, so that system-level integration with smaller size, higher performance and lower energy consumption is realized.
The existing hybrid bonding method generally includes wafer-to-wafer bonding (W2W), chip-to-chip bonding (C2C), and chip-to-wafer bonding (C2W), wherein for the C2C and C2W hybrid bonding processes, laser dicing (laser dicing) and plasma dicing (plasma dicing) are performed after a wafer binder is moved to a frame, and after dicing is completed, a laser protection solution and granular byproducts left by plasma dicing need to be removed.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a wafer cleaning method and a wafer cleaning system, which can achieve the purpose of cleaning a wafer by spraying cleaning media from the center to the edge of the wafer to be cleaned for multiple times according to time sequence while the wafer to be cleaned rotates at a low speed, and gradually removing byproducts out of the edge of the wafer under the action of inertia, and are particularly suitable for cleaning the byproducts on the surface of the cut wafer to be bonded.
In order to achieve the above object, the present invention provides a wafer cleaning method, comprising the steps of:
(1) spraying cleaning media from the center to the edge of the wafer to be cleaned for multiple times according to a time sequence while the wafer to be cleaned rotates at a low speed, defining that one spraying process from the center to the edge is completed as one spraying period, and repeating a plurality of spraying periods to enable byproducts on the surface of the wafer to be cleaned to be removed from the edge of the wafer;
(2) and spraying a cleaning and drying medium from the center to the edge of the wafer to be cleaned for multiple times according to a time sequence while the wafer to be cleaned rotates at a low speed, defining a spraying process from the center to the edge as a spraying period, and repeating the spraying periods to dry the surface of the wafer to be cleaned.
Preferably, the wafer to be cleaned is a wafer cut by a cutting process.
Preferably, the wafer to be cleaned rotates at a low speed, and the rotating speed is less than or equal to 100 rad/min.
Preferably, the cleaning medium is one or more, and when the cleaning medium is multiple, the multiple cleaning media are sprayed periodically in sequence or alternately in the same period;
the cleaning and drying media are one or more, and when the cleaning and drying media are multiple, the multiple cleaning and drying media are sprayed periodically in sequence or alternately sprayed in the same period.
Preferably, the cutting process is laser cutting and plasma cutting;
the cleaning medium comprises water and an EKC solution; the clean dry medium comprises IPA and nitrogen;
the spraying mode of the cleaning medium is as follows: spraying water for multiple periods, then spraying EKC solution for multiple periods, and then spraying water for multiple periods;
the spraying mode of the clean and dry medium is as follows: and alternately spraying nitrogen and IPA for multiple times according to a time sequence in the same spraying period, and repeating multiple spraying periods after finishing one spraying period.
Preferably, when the cleaning medium or the cleaning and drying medium is sprayed from the center to the edge of the wafer to be cleaned for a plurality of times in time sequence, the cleaning effect is improved by one or more of the following methods:
(I) increasing the number of spraying times within a spraying period;
(II) increasing the flow rate of a single spray;
(III) extending single spray time; and
(IV) increasing the number of spraying cycles.
Preferably, for any one of the cleaning media or the clean drying media, the number of spraying is not less than 4 in one spraying period;
the cleaning medium is in a liquid state, the cleaning and drying medium comprises one or more of a gaseous cleaning and drying medium and a liquid cleaning and drying medium, and the flow rate of the cleaning medium or the liquid cleaning and drying medium sprayed once is 0.2-5 ml/s, and further preferably 1-2 ml/s; the flow rate of the gaseous cleaning and drying medium sprayed for one time is 1-20 sccm, and further preferably 5-15 sccm; the time for a single spray of the cleaning medium is 0.2 to 5 seconds, further preferably 1 to 3 seconds, and the time for a single spray of the clean drying medium is 1 to 90 seconds, further preferably 40 to 60 seconds.
According to another aspect of the invention, a cleaning system for cleaning a wafer by using the wafer cleaning method is provided, which comprises a wafer to be cleaned, a spraying unit positioned above the wafer to be cleaned and a rotary supporting unit positioned below the wafer to be cleaned; wherein,
the wafer to be cleaned is positioned on the expansion cutting film fixed by the mounting frame; the wafer to be cleaned is a wafer cut by a cutting process; the wafer is cut into a plurality of chips, and the surfaces of the chips or cutting belts between the chips are provided with by-products generated in the cutting process;
the rotation supporting unit is used for supporting the wafer to be cleaned and driving the wafer to be cleaned to rotate at a low speed; the rotary supporting unit comprises a wafer supporting piece and a rotary shaft positioned below the wafer supporting piece;
the spraying unit comprises a spraying head part and a control part; the spray head part is positioned above the wafer to be cleaned; the control part is used for controlling the spray head part to spray cleaning media to the wafer to be cleaned from the center to the edge in time sequence for multiple times according to the wafer cleaning method, and removing by-products on the surface of the wafer to be cleaned.
Preferably, the nozzle part comprises a central cleaning medium channel arranged corresponding to the central position area of the wafer to be cleaned, and further comprises a plurality of peripheral cleaning medium channels which are concentrically and annularly arranged with the central cleaning medium channel and are mutually isolated, the upper part of each cleaning medium channel is connected with a cleaning medium valve, the lower part of each cleaning medium channel is provided with a plurality of uniformly distributed cleaning medium nozzles, and the cleaning medium valves are connected with the control part.
Preferably, the nozzle part comprises a central cleaning medium channel arranged corresponding to the central position area of the wafer to be cleaned, and further comprises a plurality of pairs of peripheral cleaning medium channels which are symmetrically arranged at two sides of the central cleaning medium channel and are isolated from each other, the upper part of each cleaning medium channel is connected with a cleaning medium valve, the lower part of each cleaning medium channel is provided with a plurality of cleaning medium spray outlets which are uniformly distributed, and the cleaning medium valves are connected with the control part.
Preferably, the extended cutting film is a UV film or a blue film, and the mounting frame is a film stretching ring.
Preferably, the spraying unit is fixedly connected with the motor, so that the spraying unit can rotate simultaneously with the wafer to be cleaned along with the rotation of the motor, and the relative movement speed of the spraying unit when rotating and the wafer to be cleaned when rotating is greater than 0.
Generally, compared with the prior art, the above technical solution conceived by the present invention has the following beneficial effects:
(1) the invention provides a method for cleaning a wafer, which achieves the purpose of cleaning the wafer by spraying cleaning media from the center to the edge of the wafer to be cleaned for multiple times according to a time sequence while the wafer to be cleaned rotates at a low speed, and gradually removing by-products from the edge of the wafer under the action of inertia.
(2) The wafer cleaning method provided by the invention is particularly suitable for wafers to be bonded after a chip cutting process, the wafers are not suitable for high-speed rotation and can only rotate at a low speed, and the technical problems of small centrifugal force and poor cleaning effect caused by only reducing the rotating speed can be solved by the method for spraying the cleaning medium from the center to the edge of the wafer to be cleaned for multiple times according to the time sequence and matching with the low-speed rotation of the wafer to be cleaned.
(3) According to the wafer cleaning method provided by the invention, a proper cleaning medium is selected according to the type of the by-product on the surface of the wafer, and the spraying mode and the spraying process technological parameters of spraying the cleaning medium from the center to the edge of the wafer to be cleaned for multiple times in time sequence are regulated, for example, the spraying frequency is regulated, the flow of the sprayed cleaning medium is improved, and the spraying time is prolonged, so that the cleaning effect is improved.
(4) The wafer cleaning system comprises a wafer to be cleaned, a rotary supporting unit below the wafer to be cleaned and a spraying unit at the top, wherein the spraying unit comprises a spraying head part and a control part, and the control part is used for controlling the spraying head part to spray cleaning media to the wafer to be cleaned from the center to the edge for multiple times according to a time sequence so as to remove byproducts on the surface of the wafer to be cleaned. The spray head part comprises a central cleaning medium channel positioned right above the wafer to be cleaned and a plurality of peripheral cleaning medium channels arranged along the radial outward direction of the central cleaning medium channel, the cleaning medium channels are mutually isolated, the upper part of each cleaning medium channel is provided with a respective cleaning medium valve, the lower part of each cleaning medium channel is provided with a cleaning medium spray port, and the opening and closing of each cleaning medium channel are respectively controlled by a control part according to time sequence in sequence, so that the cleaning medium is sprayed and cleaned from the center to the edge of the wafer to be cleaned in a pushing manner.
Drawings
FIG. 1 is a schematic diagram of a wafer cleaning method and system according to some embodiments of the invention.
Figure 2 is a bottom view of a disk-shaped showerhead in a wafer cleaning system in accordance with some embodiments of the present invention.
Figure 3 is a schematic bottom view of an elongated showerhead section in a wafer cleaning system in accordance with some embodiments of the invention.
Figure 4 is a bottom view of a plurality of elongated vertically crossing showerhead portions of a wafer cleaning system in accordance with some embodiments of the present invention.
The same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein:
1-chip; 2-UV film; 3-a film stretching ring; 4-a wafer support; 5-a rotating shaft; 6-central cleaning media channel; 7-peripheral cleaning media channels; 8-a cleaning medium valve; 9-cleaning medium ejection port; 10-Total input of cleaning media.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The wafer cleaning method provided by the invention can be suitable for cleaning wafers in each procedure in a semiconductor manufacturing process, and is particularly suitable for wafers to be bonded after being cut by a chip cutting process. When the traditional method is used for cleaning an uncut wafer, a cleaning medium is sprayed while the wafer is rotated at a high speed, so that byproducts (the byproducts comprise a large amount of particles (particles) on the surface of the wafer, laser protective glue, polymer and the like) are thrown out under the action of high-speed inertia and centrifugal force to play a cleaning role. However, for the wafer subjected to the cutting process, for example, for the wafer subjected to laser cutting (laser scribing) and plasma cutting (plasma dicing), the bottom of the wafer is often subjected to a thinning process and then is adhered to the dicing expansion film, and if the rotation speed is too high according to the conventional high-speed rotation cleaning method, the cut chip is thrown out. Generally, the rotation speed of the traditional wafer is above 1000rad/min during cleaning, and basically above 2000rad/min during drying, but experiments show that for the cut wafer, the rotation speed during rotation cleaning is not more than 100rad/min, and according to the original cleaning method, the rotation speed is only reduced, the cleaning effect is poor, and byproducts generated on the surface of the wafer in the cutting process cannot be well removed. Therefore, the invention provides a wafer cleaning method, which comprises the following steps:
(1) spraying cleaning media from the center to the edge of the wafer to be cleaned for multiple times according to a time sequence while the wafer to be cleaned rotates at a low speed, defining that one spraying process from the center to the edge is completed as one spraying period, and repeating a plurality of spraying periods to enable byproducts on the surface of the wafer to be cleaned to be removed from the edge of the wafer;
(2) and spraying a cleaning and drying medium from the center to the edge of the wafer to be cleaned for multiple times according to a time sequence while the wafer to be cleaned rotates at a low speed, defining a spraying process from the center to the edge as a spraying period, and repeating the spraying periods to dry the surface of the wafer to be cleaned.
The invention provides a cleaning method of a wafer after cutting, which sprays cleaning media from the center to the edge of the wafer to be cleaned for multiple times according to time sequence while the wafer to be cleaned rotates at low speed, wherein the cleaning media comprise liquid or gas media for cleaning by-products and liquid or gas cleaning media for cleaning and drying; simultaneously dry in-process, through spraying clean dry media such as IPA and nitrogen gas, utilize IPA to take away cleaning medium residue and accessory substance residue, nitrogen gas weathers IPA simultaneously, plays clean dry effect.
In some embodiments of the present invention, the rotation speed of the wafer to be cleaned is not greater than 100rad/min, preferably not greater than 50 rad/min, and more preferably 10-20 rad/min.
According to the cleaning method, a proper cleaning medium and a proper cleaning and drying medium can be selected according to byproducts on the surface of the wafer, for example, for the wafer to be cleaned after laser cutting and plasma cutting, laser protective glue and a polymer (polymer) generated in plasma cutting are remained in the cutting process, the cleaning medium generally selects deionized water and an EKC solution (the EKC solution is a solution which is common in wafer cleaning in a semiconductor process and is a mixed solution of an N-methyl pyrrolidone solvent and an amine with alkalinity), wherein the deionized water can be used for cleaning water-soluble laser protective glue, the EKC solution can be used for removing the polymer generated in plasma cutting, and the cleaning and drying medium generally selects IPA (isopropyl alcohol) and nitrogen.
In the wafer cleaning method, the cleaning medium can be one or more, and when the cleaning medium is multiple, the multiple cleaning media can be sprayed periodically in sequence or alternately in the same period; the cleaning and drying medium can be one or more, and when the cleaning and drying medium is multiple, the multiple cleaning and drying media can be sprayed sequentially and periodically or sprayed alternately in the same period.
Specifically, if multiple cleaning media exist, the periodic spraying is performed in sequence, that is, for different types of cleaning media, first cleaning media are periodically sprayed (the first cleaning media are sprayed for multiple periods), then second cleaning media are periodically sprayed (the second cleaning media are also sprayed for multiple periods), and so on, the periodic spraying of different cleaning media is completed according to the sequence; the same principle is that a plurality of cleaning and drying media are sprayed periodically in sequence. If a plurality of cleaning media are alternately sprayed in the same period, the cleaning media are alternately sprayed in the same spraying period according to the preset alternating sequence according to the requirement, and then a plurality of spraying periods are repeated to finish the cleaning process. The same applies to the alternative spraying of multiple cleaning and drying media in the same period.
Taking the wafer to be cleaned obtained by laser cutting and plasma cutting as an example, when the cleaning method is adopted for cleaning, the cleaning medium can adopt water and EKC solution; IPA and nitrogen can be used as cleaning and drying media; wherein the spraying mode of the cleaning medium is as follows: spraying water for multiple periods, then spraying EKC solution for multiple periods, and then spraying water for multiple periods; firstly, water is adopted to wash and remove residual laser protection glue, then EKC solution is adopted to wash and remove polymer generated by plasma cutting, and finally water is adopted to wash and remove residual EKC solution. In the cleaning and drying process, nitrogen and IPA are sprayed alternately for several times in the same spraying period, for example, nitrogen is sprayed in the center, IPA, nitrogen, IPA and nitrogen … … are sprayed alternately along the radial direction, and after one spraying period is completed, the spraying periods are repeated to complete the cleaning and drying process.
In some embodiments, when the cleaning medium or the cleaning and drying medium is sprayed from the center to the edge of the wafer to be cleaned for a plurality of times in time sequence, the cleaning effect is improved by one or more of the following methods:
(I) increasing the number of spraying times within a spraying period; the cleaning effect is improved by spraying for multiple times and cleaning for multiple times; in a preferred embodiment, the number of spraying is not less than 4 in one spraying period. The more the spraying times in one period are, the more and finer the cleaning area which is divided by the wafer to be cleaned is, which is beneficial to improving the cleaning effect.
(II) increasing the flow rate of a single spray; the cleaning effect of the cleaning medium on the by-products can be improved by increasing the spraying flow, but the spraying flow is not too high, otherwise the cleaning effect is influenced by easy splashing, and the chips can be blown; the cleaning medium in the cleaning method is generally in a liquid state, the cleaning and drying medium comprises one or more of a gaseous cleaning and drying medium and a liquid cleaning and drying medium, the flow rate of the single spraying of the cleaning medium or the liquid cleaning and drying medium is 0.2-5 ml/s, preferably 1-2ml/s, and the flow rate of the single spraying of the gaseous cleaning and drying medium is 1-20 sccm, preferably 5-15 sccm; the liquid cleaning and drying medium is preferably IPA, the gaseous cleaning and drying medium is preferably nitrogen, and the flow rate of the cleaning and drying medium IPA is controlled to be 1-2ml/s in the preferred embodiment, 1-2ml/s in the single spraying flow rate of the cleaning and drying medium IPA and 5-15sccm in the single spraying flow rate of N2.
(III) extending single spray time; by extending the single spray time of the cleaning medium, the cleaning effect can be improved. The time for one time of spraying the cleaning medium is 0.2-5 seconds, preferably 1-3 seconds, and the time for one time of spraying the cleaning and drying medium is 1-90 seconds, preferably 40-60 seconds; in order to ensure the cleaning effect, in one spraying period, the same cleaning medium (cleaning medium or cleaning and drying medium) can be kept constant in time for each spraying; the spraying time can also be gradually reduced in the spraying process from the center to the edge, and can be adjusted according to the requirement.
(IV) increasing the number of spraying cycles. The number of spraying periods of each of the general washing or cleaning and drying processes is not less than 20 times, and can be adjusted according to needs. By the cleaning mode of repeating a plurality of cleaning cycles from the center to the edge in time sequence, the cleaning effect is improved by matching with the low-speed rotation of the wafer to be cleaned below, namely changing the phase of the wafer to be cleaned below to the rotation speed increasing.
In some embodiments, the spray of cleaning medium is applied to the wafer surface at a distance of 1-3cm above the wafer surface to be cleaned.
The invention also provides a cleaning system for cleaning the wafer by using the wafer cleaning method, which comprises a wafer to be cleaned, a spraying unit positioned above the wafer to be cleaned and a rotary supporting unit positioned below the wafer to be cleaned; wherein,
the wafer to be cleaned is a wafer cut by a chip cutting process; the wafer to be cleaned is positioned on the expansion cutting film fixed by the mounting frame. For the composite bonding mode from the chip to the wafer, the bottom of the wafer to be cut is generally thinned, and the thinned wafer is placed on an expanded cutting film, wherein the expanded cutting film can be a UV film or a blue film; the stretch-cut film is then secured around its periphery using a mounting frame, also referred to as a film stretching ring, such as an iron ring. During cutting, the stretched film can be stretched and expanded by using a film stretching ring according to the requirement, so that subsequent laser and plasma cutting is facilitated. The wafer is cut into a plurality of chips, and the surfaces of the chips or cutting belts between the chips are provided with byproducts generated in the cutting process.
The rotation supporting unit is used for supporting the wafer to be cleaned and driving the wafer to be cleaned to rotate at a low speed; the rotation supporting unit includes a wafer support and a rotation shaft located below the wafer support. The wafer support and the rotating shaft below the wafer support can adopt a rotating support platform adopted in the traditional wafer cleaning process, and can be designed or developed according to the process requirement of the invention.
The spraying unit comprises a spraying head part and a control part; the spraying head part is positioned right above the wafer to be cleaned, and the control part is used for controlling the spraying head part to spray cleaning media to the wafer to be cleaned from the center to the edge for multiple times according to a time sequence so as to remove byproducts on the surface of the wafer to be cleaned.
In a preferred embodiment, the nozzle part includes a central cleaning medium channel corresponding to a central region of the wafer to be cleaned, and further includes a plurality of peripheral cleaning medium channels concentrically and annularly arranged and isolated from the central cleaning medium channel, an upper portion of each cleaning medium channel is connected to a cleaning medium valve, a lower portion of each cleaning medium channel is provided with a plurality of cleaning medium nozzles uniformly distributed, and the cleaning medium valves are connected to the control part. In these embodiments, the outer shape of the showerhead is disk-like, similar to the shape of a shower head. The shower head is different from a shower head in that the shower head comprises mutually isolated cleaning medium channels, each cleaning medium channel is provided with an independent cleaning medium valve, and the control part controls the opening and closing of each cleaning medium valve corresponding to each cleaning medium channel so as to realize the time-sequence multi-time spraying and cleaning of different cleaning media from the center of a wafer to the edge.
In other embodiments, the nozzle part includes a central cleaning medium channel corresponding to a central region of the wafer to be cleaned, and further includes a plurality of pairs of peripheral cleaning medium channels symmetrically disposed at two sides of the central cleaning medium channel and isolated from each other, an upper portion of each cleaning medium channel is connected to a cleaning medium valve, a lower portion of each cleaning medium channel is provided with a plurality of cleaning medium nozzles uniformly distributed, and the cleaning medium valves are connected to the control part. In these embodiments, the nozzle portion may be configured as a long strip, and also includes a central cleaning medium channel and peripheral cleaning medium channels on two sides, the central cleaning medium channel corresponds to a central region of the wafer to be cleaned, and the plurality of peripheral cleaning medium channels are sequentially and symmetrically disposed on two sides of the central cleaning medium channel and are disposed along a direction from the center to the edge of the wafer to be cleaned.
In a preferred embodiment, when the cleaning system is operated, the central cleaning medium channel corresponds to the central area of the wafer to be cleaned, and the outer edge of the peripheral cleaning medium channel at the side far away from the central cleaning medium channel corresponds to the edge position of the wafer to be cleaned.
The cleaning system can control the time for spraying the cleaning medium to each cleaning medium channel by controlling the opening and closing time of the cleaning medium valve corresponding to each cleaning medium channel. The cleaning medium valve can be an electronic valve, and the cleaning medium spray outlet can be realized by punching a hole at the bottom of the cleaning medium channel or arranging a pipeline and the like.
When different types of cleaning media are used for cleaning successively, different cleaning media can share the same cleaning media channel, and the upper part of each cleaning media channel is provided with a respective cleaning media valve for different cleaning media. For example, for wafers cut by laser and plasma, the cleaning medium was water, EKC and water, and the cleaning and drying medium was IPA and N2. Taking a central cleaning medium channel as an example, when water is taken as a cleaning medium, a water cleaning medium valve is opened, and water is firstly introduced into the channel; when the EKC is adopted as a cleaning medium, the water cleaning medium valve is closed, the EKC cleaning medium valve is opened, and the EKC cleaning medium is introduced into the channel; when water is adopted as a cleaning medium again, the EKC cleaning medium valve is closed, and the water cleaning medium valve is opened, so that water is introduced into the channel; when drying, closing a water cleaning medium valve at the upper part of the channel, alternately opening IPA and nitrogen valves in the same spraying period, and sequentially introducing IPA and nitrogen into the channel; then, sequentially introducing IPA and nitrogen into adjacent peripheral cleaning medium channels, repeating a plurality of same spraying periods to finish a cleaning and drying process by repeating one spraying period from the center to the edge by repeating the steps; or in the same spraying period, opening a nitrogen valve corresponding to the central cleaning medium channel, introducing nitrogen into the central cleaning medium channel, then closing the valve, opening an IPA valve corresponding to the adjacent peripheral cleaning medium channel, introducing IPA into the peripheral cleaning medium channel, then closing the valve, opening a nitrogen valve corresponding to the adjacent peripheral cleaning medium channel outwards along the radius, introducing nitrogen … … into the channel, and so on, completing a spraying period for multiple times according to the time sequence, and repeating multiple spraying periods to complete the cleaning and drying process.
In one embodiment, a wafer which is cut by laser and plasma sequentially is cleaned, as shown in fig. 1, the wafer to be cleaned is cut into a plurality of chips 1, the wafer to be cleaned is positioned on a UV film 2 fixed by a stretched film ring 3, and the stretched film ring 3 is an iron ring with an outer diameter of 380 mm; and the surface of the chip 1 or the dicing tape between the chip 1 and the chip 1 has by-products generated during the dicing process.
A wafer supporting piece 4 and a rotating shaft 5 positioned below the wafer supporting piece are arranged below the wafer to be cleaned, the wafer supporting piece 4 is used for supporting the wafer to be cleaned, and the rotating shaft 5 is used for driving the wafer to be cleaned to rotate at a low speed. The wafer support 4 and the rotating shaft 5 below can adopt the support and the rotating shaft adopted in the traditional wafer high-speed rotating cleaning device, and the rotating speed of the wafer support and the rotating shaft is reduced to meet the requirement of the cleaning process of the invention when in use; the low-speed rotating shaft can be designed or replaced by self so as to meet the requirement of the low-speed rotating cleaning method.
A spraying unit is arranged right above the wafer to be cleaned and comprises a spraying head part and a control part; the control part is used for controlling the spray head part to spray cleaning media from the center to the edge of the wafer to be cleaned for multiple times according to time sequence so as to remove by-products on the surface of the wafer to be cleaned. As shown in fig. 1, the nozzle portion includes a central cleaning medium channel 6 corresponding to a central region of a wafer to be cleaned, and further includes a plurality of peripheral cleaning medium channels 7 concentrically and annularly arranged with the central cleaning medium channel 6 and isolated from each other, an upper portion of each cleaning medium channel is connected to a cleaning medium valve 8, for different cleaning media, the upper portion of each cleaning medium channel is provided with one or more cleaning medium valves 8 (not shown in the figure), a lower portion of each cleaning medium channel is provided with a plurality of cleaning medium ejection ports 9 uniformly distributed, and the cleaning medium valves 8 are connected to a control portion (not shown in the figure). When the cleaning device works, the control part controls the corresponding cleaning medium valve 8 to be opened, the cleaning medium is output from the cleaning medium main input port 10, enters the corresponding cleaning medium channel through the corresponding cleaning medium valve 8 and is sprayed out through the cleaning medium spray port 9. Only one cleaning medium main inlet 10 is illustrated in fig. 1, only one cleaning medium valve 8 is illustrated in each cleaning medium channel, in practical application, for the case of using a plurality of cleaning media, a plurality of cleaning medium main inlets 10 may be provided as required, and a plurality of cleaning medium valves may be provided in each cleaning medium channel as required.
The central cleaning medium passage 6 and the peripheral cleaning medium passage 7 are collectively referred to as cleaning medium passages, and each cleaning medium passage is isolated from each other, meaning that the passages are independent from each other, so that different cleaning medium passages are controlled separately without affecting each other. The control part controls the type of the cleaning medium introduced into each cleaning medium channel, the spraying time of the cleaning medium sprayed from the cleaning medium spray nozzle arranged at the lower part of the cleaning medium channel, the spraying speed and other parameters. The cleaning medium valves corresponding to each cleaning medium channel are respectively controlled. The bottom view of the nozzle head in this embodiment is shown in fig. 2, and it can be seen that the nozzle head is disc-shaped, and includes a central cleaning medium channel 6, and a plurality of peripheral cleaning medium channels 7 concentrically and annularly arranged with the central cleaning medium channel 6, each cleaning medium channel is isolated from each other, and the bottom of each cleaning medium channel is provided with a plurality of cleaning medium ejection outlets 9 uniformly distributed. The disc-shaped spray head is the same as the wafer to be cleaned in size, and is positioned right above the wafer to be cleaned during working.
In some embodiments, the distance between the nozzle head and the wafer to be cleaned is adjustable, so that the distance between the nozzle head and the wafer to be cleaned is adjusted as required, and the cleaning effect is ensured.
In this embodiment, when the wafer to be cleaned supported by the support member is driven by the rotation of the rotation shaft, the distance between the nozzle head and the surface of the wafer to be cleaned is 1.5cm, the wafer to be cleaned rotates at a low speed of 100rad/min, at first, the control portion controls the water cleaning medium valve corresponding to the central cleaning medium channel to open, the deionized water is ejected for 1s through the cleaning medium ejection ports at the lower part of the channel, the valve is closed after the flow rate is 1.8ml/s, then the valve of the peripheral cleaning medium channel concentrically and annularly arranged adjacent to the central cleaning medium channel is controlled to open, the deionized water is introduced to remove the laser protection glue, the deionized water is ejected through the cleaning medium ejection ports at the lower part of the channel, the ejection time is 0.8s, the valve is closed after the flow rate is 1.8ml/s, and so on, the outward direction along the radius of the wafer, spraying deionized water reagent from the center to the edge for 5 times according to time sequence, wherein the spraying time is 1s, 0.8s, 0.6s, 0.4s and 0.2s respectively, the flow rate is kept unchanged and is 1.8ml/s, the step is regarded as a cycle, and then the cycle is repeated for 120 times; opening an EKC cleaning medium valve at the upper part of the central cleaning channel according to the same mode and parameters, introducing an EKC solution to remove the polymer by-product, and circulating for 80 times; after the EKC solution is cleaned, deionized water is introduced again according to the same mode, the single spraying time is 2.8s, and the circulation is carried out for 20 times; and then closing the water cleaning medium valve, firstly opening a nitrogen gas valve of the central cleaning medium channel, wherein the time of spraying N2 once is 45s, the flow rate of N2 is 10 sccm (standard milliliter per minute), closing the nitrogen gas valve after the completion, opening an IPA valve of the central cleaning medium channel, the time of spraying IPA once is 45s, the flow rate of spraying IPA once is 1.5 ml/s, and after the completion, alternately spraying IPA and N2 to adjacent peripheral cleaning medium channels by sequentially adopting the same operation, and circulating for 3 times after finishing one spraying period, thereby finally achieving the purpose of cleaning the wafer. The cleaning medium is sprayed to the wafer to be cleaned for a plurality of times according to the time sequence, the cleaning medium is sprayed from the center of the wafer to the outer direction along the radius of the wafer, meanwhile, the lower wafer rotates at a low speed, the upper spraying head part and the lower wafer to be cleaned are matched with each other according to the working mode that the time sequence is divided for a plurality of times, and the by-product is gradually moved out from the center to the edge of the wafer by inertia, so that the aim of cleaning is fulfilled. After the cleaning is finished, the surface of the wafer to be cleaned is found to have particles larger than 0.2 mu m and less than 100 particles through tests, and the cleaning effect meets the process requirements.
In other embodiments, as shown in fig. 3, the nozzle portion is in a long strip shape, and includes a central cleaning medium channel 6 disposed corresponding to a central region of a wafer to be cleaned, and a plurality of pairs of peripheral cleaning medium channels 7 symmetrically disposed at two sides of the central cleaning medium channel and isolated from each other, wherein an upper portion of each cleaning medium channel is connected to a cleaning medium valve, and a lower portion of each cleaning medium channel is provided with a plurality of cleaning medium ejection outlets 9 uniformly distributed. When the cleaning device works, the outer edge position of the peripheral cleaning medium channel 7 at the outermost side is positioned right above the outer edge position of the wafer to be cleaned.
In still other embodiments, the elongated head unit shown in fig. 3 is a head unit, two or more head units share the same central cleaning passage 6, the central cleaning passage 6, and the cleaning medium valve 8 and the cleaning medium discharge port 9 respectively provided at the upper portion and the bottom portion of the central cleaning passage 6 are arranged perpendicular to or across each other to form the head unit according to the present invention, and the bottom view of the head unit formed by two head units crossing perpendicularly is shown in fig. 4.
When the cleaning system is used for cleaning the cut wafer, the wafer to be cleaned below rotates at a low speed, and the cleaning medium valves corresponding to the central cleaning channel and the peripheral cleaning channels are respectively controlled according to the time sequence, so that the cleaning medium is sprayed to the surface of the wafer for multiple times, firstly sprayed to the center of the wafer and then gradually sprayed from the center to the edge, and in the process of low-speed rotation of the wafer, the by-product or the reaction product of the cleaning medium and the by-product is gradually pushed to the edge of the wafer by inertia, thereby achieving the purpose of cleaning.
In other embodiments, the spraying unit is fixedly mounted on a mounting plate, the mounting plate is fixedly connected with a shaft of a motor, and the motor drives the spraying unit to rotate. When the spraying unit rotates, the rotation direction and the rotation speed of the wafer to be cleaned are required to be avoided being completely the same, and the relative rotation speed of the wafer to be cleaned and the spraying unit is ensured to be greater than 0 at the same speed in the same direction or at the same or different speed in the opposite direction. The defect that the wafer to be cleaned can only rotate at a low speed can be overcome by increasing the relative rotation speed, and the cleaning medium is sequentially sprayed from the center to the edge of the wafer to be cleaned for multiple times according to a time sequence through the spraying head part, so that the by-products are gradually pushed to the outer part of the edge of the wafer, and the aim of improving the cleaning effect is fulfilled. Any prior art structural component capable of effecting rotation of the spray unit of the present invention may be employed.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A method of cleaning a wafer, comprising the steps of:
(1) spraying cleaning media from the center to the edge of the wafer to be cleaned for multiple times according to a time sequence while the wafer to be cleaned rotates at a low speed, defining that one spraying process from the center to the edge is completed as one spraying period, and repeating a plurality of spraying periods to enable byproducts on the surface of the wafer to be cleaned to be removed from the edge of the wafer;
(2) and spraying a cleaning and drying medium from the center to the edge of the wafer to be cleaned for multiple times according to a time sequence while the wafer to be cleaned rotates at a low speed, defining a spraying process from the center to the edge as a spraying period, and repeating the spraying periods to dry the surface of the wafer to be cleaned.
2. The wafer cleaning method as claimed in claim 1, wherein the wafer to be cleaned is a wafer cut by a cutting process.
3. The method of claim 2, wherein the wafer to be cleaned is rotated at a low speed, and the rotation speed is less than or equal to 100 rad/min.
4. The wafer cleaning method as claimed in claim 2, wherein the cleaning medium is one or more, and when the cleaning medium is multiple, the multiple cleaning media are periodically sprayed in sequence or alternately sprayed in the same period;
the cleaning and drying media are one or more, and when the cleaning and drying media are multiple, the multiple cleaning and drying media are sprayed periodically in sequence or alternately sprayed in the same period.
5. The wafer cleaning method according to claim 4, wherein the dicing process is laser dicing and plasma dicing;
the cleaning medium comprises water and an EKC solution; the clean dry medium comprises IPA and nitrogen;
the spraying mode of the cleaning medium is as follows: spraying water for multiple periods, then spraying EKC solution for multiple periods, and then spraying water for multiple periods;
the spraying mode of the clean and dry medium is as follows: and alternately spraying nitrogen and IPA for multiple times according to a time sequence in the same spraying period, and repeating multiple spraying periods after finishing one spraying period.
6. The wafer cleaning method as claimed in claim 1, wherein when the cleaning medium or the cleaning drying medium is sprayed from the center to the edge of the wafer to be cleaned in time series and multiple times, the cleaning effect is enhanced by one or more of the following methods:
(I) increasing the number of spraying times within a spraying period;
(II) increasing the flow rate of a single spray;
(III) extending single spray time; and
(IV) increasing the number of spraying cycles.
7. The wafer cleaning method as claimed in claim 6, wherein the number of spraying times in one spraying cycle is not less than 4 for any one of the cleaning media or the cleaning drying media.
8. A cleaning system for cleaning a wafer by using the wafer cleaning method as claimed in any one of claims 1 to 7, comprising a wafer to be cleaned, a spraying unit located above the wafer to be cleaned, and a rotation supporting unit located below the wafer to be cleaned; wherein,
the wafer to be cleaned is positioned on the expansion cutting film fixed by the mounting frame; the wafer to be cleaned is a wafer cut by a cutting process; the wafer is cut into a plurality of chips, and the surfaces of the chips or cutting belts between the chips are provided with by-products generated in the cutting process;
the rotation supporting unit is used for supporting the wafer to be cleaned and driving the wafer to be cleaned to rotate at a low speed; the rotary supporting unit comprises a wafer supporting piece and a rotary shaft positioned below the wafer supporting piece;
the spraying unit comprises a spraying head part and a control part; the spray head part is positioned above the wafer to be cleaned; the control part is used for controlling the spray head part to spray cleaning media to the wafer to be cleaned from the center to the edge in time sequence for multiple times according to the wafer cleaning method of any one of claims 1 to 7, and removing by-products on the surface of the wafer to be cleaned.
9. The cleaning system as claimed in claim 8, wherein the nozzle part comprises a central cleaning medium channel corresponding to a central region of the wafer to be cleaned, and further comprises a plurality of peripheral cleaning medium channels concentrically and annularly isolated from the central cleaning medium channel, wherein an upper portion of each cleaning medium channel is connected to a cleaning medium valve, a lower portion of each cleaning medium channel is provided with a plurality of uniformly distributed cleaning medium nozzles, and the cleaning medium valves are connected to the control part.
10. The cleaning system as claimed in claim 8, wherein the nozzle part comprises a central cleaning medium channel corresponding to a central region of the wafer to be cleaned, and further comprises a plurality of pairs of peripheral cleaning medium channels symmetrically arranged at two sides of the central cleaning medium channel, wherein the upper part of each cleaning medium channel is connected with a cleaning medium valve, the lower part of each cleaning medium channel is provided with a plurality of cleaning medium ejection holes uniformly distributed, and the cleaning medium valves are connected with the control part.
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| US20230415204A1 (en) * | 2022-06-23 | 2023-12-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wet cleaning tool and method |
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Application publication date: 20220419 |