CN114355496B - Far infrared band filter with working wave band of 11500-12500nm - Google Patents
Far infrared band filter with working wave band of 11500-12500nm Download PDFInfo
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- CN114355496B CN114355496B CN202111682816.3A CN202111682816A CN114355496B CN 114355496 B CN114355496 B CN 114355496B CN 202111682816 A CN202111682816 A CN 202111682816A CN 114355496 B CN114355496 B CN 114355496B
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- germanium
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- 239000000758 substrate Substances 0.000 claims abstract description 38
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 29
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 29
- 238000002834 transmittance Methods 0.000 claims abstract description 26
- 229910052984 zinc sulfide Inorganic materials 0.000 claims abstract description 21
- 239000005083 Zinc sulfide Substances 0.000 claims abstract description 15
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000007747 plating Methods 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 description 9
- 238000001514 detection method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention provides a far infrared band filter with a working wave band of 11500-12500nm, and relates to the field of far infrared band filters. The far infrared band filter with the working wave band of 11500-12500nm comprises a front surface film system, a substrate and a back surface film system, wherein the front surface film system is formed by alternately superposing a zinc sulfide layer and a germanium film layer, 46 layers are formed by alternately superposing the zinc sulfide layer and the germanium film layer, the substrate is a germanium sheet, the diameter of the substrate is 20mm, the thickness of the substrate is 1mm, two surfaces of the germanium substrate are polished, the front surface film system and the back surface film system are respectively plated on the two surfaces, the back surface film system is formed by alternately superposing the zinc sulfide layer and the germanium film layer, and 76 layers are formed by alternately superposing the zinc sulfide layer and the germanium film layer. When the substrate is used, under the action of plating the front surface film system and the back surface film system on the substrate, the finally obtained transmittance curve of the far infrared band-pass filter can work in 11500-12500nm, and has higher transmittance and high cut-off of other wave bands.
Description
Technical Field
The invention relates to the field of far infrared band filters, in particular to a far infrared band filter with a working wave band of 11500-12500 nm.
Background
The band filter is a filter which has high transmissivity to a certain wave band and high cut-off to the wave bands at the two ends of the band filter, the far infrared filter has higher transmissivity in a far infrared wavelength range at a central wavelength and high cut-off to the other wave bands, and the band filter is mainly applied to an infrared spectrum detection system and has very important application in the aerospace field.
Along with the development of the spatial infrared technology, the requirement on the waveform of the infrared band-pass filter is higher and higher, background stray signals can be effectively filtered, the signal to noise ratio of a detection system is improved, in addition, besides the high requirement on the optical characteristics of the filter, the requirement on the reliability of the infrared filter film layer in the field of the spatial technology is extremely high, the variety of the infrared filter film layer materials which can be selected at present is few, and the preparation is still extremely difficult.
Disclosure of Invention
(one) solving the technical problems
Aiming at the defects of the prior art, the invention provides the far infrared band filter with the working wave band of 11500-12500nm, solves the problems that the far infrared band filter has higher and higher waveform requirements on the infrared band filter along with the development of the spatial infrared technology, can effectively filter background stray signals and improve the signal to noise ratio of a detection system, has extremely high requirements on the reliability of the infrared filter film in the technical field of space, and has extremely high difficulty in preparation because the available infrared filter film material has few varieties.
(II) technical scheme
In order to achieve the above purpose, the invention is realized by the following technical scheme: the far infrared band filter with the working wave band of 11500-12500nm comprises a far infrared band filter, and comprises a front surface film system, a substrate and a back surface film system, wherein the front surface film system is formed by alternately superposing zinc sulfide layers and germanium film layers, and the total number of the zinc sulfide layers and the germanium film layers is 46;
the substrate is a germanium sheet, the diameter of the substrate is 20mm, the thickness of the substrate is 1mm, two sides of the germanium substrate are polished, and a front surface film system and a back surface film system are respectively plated on the two sides;
the back film system is formed by alternately superposing zinc sulfide layers and germanium film layers, and the total number of the zinc sulfide layers and the germanium film layers is 76.
Preferably, the front-side film system is a high-transmittance segment main peak film system, wherein in = 12000nm, h represents the physical thickness of the germanium film layer, and L represents the physical thickness of the ZnS film layer.
Preferably, the front film system mainly comprises: sub/200.00H 165.76L 546.75H 484.74L 379.64H 581.13L 392.43H 570.42L 419.89H 590.83L 334.55H 615.23L 341.37H 600.55L 319.22H 574.20L 348.56H 578.95L 343.77H 503.72L 229.09H 477.32L 169.41H 562.28L 272.79H 415.94L 274.22H 515.25L 190.66H 499.52L 153.10H 559.69L 262.34H 466.80L 293.55H 355.93L 197.04H 473.36L 163.63H 185.15L 305.82H 205.92L 223.92H 241.73L 282.80H 269.99L 143.28H 222.65L 294.81H 270.79L201.34H 191.01L 302.41H 236.64L 142.72H 278.50L 277.75H 300.27L 155.51H 205.33L191.19H 159.56L 165.37H 255.97L 117.34H 391.25L 81.35H 327.36L 147.08H 164.23L232.69H 67.04L 209.66H 256.55L 90.24H 1153.89L/Air.
Preferably, the reverse film system is a front cut-off film system with a visible light-6500 nm wave band, wherein in=550nm, h represents the physical thickness of the germanium film layer, and L represents the physical thickness of the ZnS film layer.
Preferably, the back surface film system mainly comprises: sub/235.70H 881.43L 1647.08H 650.17L1467.46H 739.61L 729.29H 882.07L 391.47H 1231.81L 592.20H 1538.37L 810.61H 746.24L 836.87H 1429.76L 825.01H 3036.41L 863.04H 973.18L 408.00H 223.57L 615.75H 808.83L 872.97H 2094.31L 443.56H 670.83L 994.91H 952.12L 634.88H 395.82L 637.80H 670.10L 2039.36H 861.44L 654.21H 830.33L 95.27H 499.02L 708.59H 672.32L 579.34H 294.34L 1216.93H 1838.84L/Air.
Preferably, the absolute transmittance of the optical filter in the substrate is less than or equal to 1.0% in the wave band range of visible light-11200 nm and 12800-14500 nm;
the light filter has a transmittance less than or equal to 5.0% in the wave band range of 11200-11250nm and 12750-12800 nm;
the absolute transmittance of the optical filter is more than or equal to 88% and the average transmittance is more than or equal to 92% in the wave band range of 11500-12500 nm.
Working principle: when the transparent film is used, the front film system 1 and the back film system 3 play a role in protecting the substrate 2, meanwhile, when the peak value transmitted by the front film system 1 in the using process of the substrate 2 is a main peak film system with a high transmission section, 11500-12500nm wave band high transmission is realized, meanwhile, 6500-11200nm and 12800-14500nm wave bands are cut off, when the peak value transmitted by the back film system 3 in the using process of the substrate 2 is visible light, the front cut-off film system is used for the visible light, the absolute transmission rate of the optical filter in the substrate 2 is less than or equal to 1.0% in the wave bands of the visible light-11200 nm,12800-14500nm, the transmission rate of the optical filter in the substrate 2 is less than or equal to 5.0% in the wave bands of the 11200-11250nm,12750-12800nm, the absolute transmission rate of the optical filter in the substrate 2 is more than or equal to 88% in the range of 11500-12500nm, the average transmission rate of the optical filter in the substrate 2 is more than or equal to 92% in the working wave band high transmission band of the optical filter in the working wave band of the substrate 2 and the front cut-off film in the visible light wave band of the front cut-off film in the wave band of the visible light-off band of the optical filter is in the range of the light-stop band of the light-stop film is in the range of the light transmission band of the light transmission band 2.
(III) beneficial effects
The invention provides a far infrared band filter with a working wave band of 11500-12500 nm. The beneficial effects are as follows:
1. when the substrate is used, under the action of plating the front surface film system and the back surface film system on the substrate, the finally obtained transmittance curve of the far infrared band-pass filter can work in 11500-12500nm, and has higher transmittance and high cut-off of other wave bands.
2. The front surface film system can realize high transmittance of 11500-12500nm wave bands, and simultaneously realize high cut-off of 6500-11200nm wave bands and 12800-14500nm wave bands, and the back surface film system can enable visible light to reach a front cut-off film system of-6500 nm.
3. The far infrared band-pass filter has higher transmittance in the operating band 11500-12500nm and is highly cut-off in other bands.
Drawings
FIG. 1 is a schematic diagram of a far infrared band-pass filter with an operating band of 11500-12500 nm;
FIG. 2 is a graph showing transmittance of the positive mask system according to the present invention;
FIG. 3 is a graph showing transmittance of the back side film of the present invention;
FIG. 4 is a schematic diagram of transmittance curves of a far infrared band-pass filter with an operating band of 11500-12500 nm;
wherein 1, a front surface film system 2, a substrate 3 and a back surface film system.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Embodiment one:
as shown in FIG. 1, the embodiment of the invention provides a far infrared band filter with a working wave band of 11500-12500nm, which comprises a far infrared band filter, a front surface film system 1, a substrate 2 and a back surface film system 3, wherein the front surface film system 1 is formed by alternately superposing a zinc sulfide layer and a germanium film layer, and the total number of the zinc sulfide layer and the germanium film layer is 46;
the substrate 2 is a germanium sheet, the diameter of the substrate is 20mm, the thickness of the substrate is 1mm, two surfaces of the germanium substrate are polished, and a front surface film system 1 and a back surface film system 2 are respectively plated on the two surfaces;
the back surface film system 3 is formed by alternately superposing a zinc sulfide layer and a germanium film layer, 76 layers are formed in total, when the substrate is used, under the action that the front surface film system 1 and the back surface film system 3 are plated on the substrate 2, the finally obtained transmittance curve of the far infrared band-pass filter can work in 11500-12500nm, the band has higher transmittance, and the heights of other bands are cut off.
Embodiment two:
as shown in fig. 2 and fig. 3, the embodiment of the present invention provides a far infrared band filter with a working band of 11500-12500nm, including a far infrared band filter, where the front surface film system 1 is a high-transmission section main peak film system, and in = 12000nm, h represents the physical thickness of the germanium film layer, and L represents the physical thickness of the ZnS film layer;
the main constitution of the positive film system 1 is as follows: sub/200.00H 165.76L 546.75H 484.74L 379.64H 581.13L 392.43H 570.42L 419.89H 590.83L 334.55H 615.23L 341.37H 600.55L 319.22H 574.20L 348.56H 578.95L 343.77H 503.72L 229.09H 477.32L 169.41H 562.28L 272.79H 415.94L 274.22H 515.25L 190.66H 499.52L 153.10H 559.69L 262.34H 466.80L 293.55H 355.93L 197.04H 473.36L 163.63H 185.15L 305.82H 205.92L 223.92H 241.73L 282.80H 269.99L 143.28H 222.65L 294.81H 270.79L201.34H 191.01L 302.41H 236.64L 142.72H 278.50L 277.75H 300.27L 155.51H 205.33L191.19H 159.56L 165.37H 255.97L 117.34H 391.25L 81.35H 327.36L 147.08H 164.23L232.69H 67.04L 209.66H 256.55L 90.24H 1153.89L/Ai;
the reverse film system 3 is a front cut-off film system of visible light-6500 nm wave band, wherein the front cut-off film system is in the range of 5500nm, H represents the physical thickness of a germanium film layer, and L represents the physical thickness of a ZnS film layer;
the main constitution of the reverse mask system 3 is as follows: sub/235.70H 881.43L 1647.08H 650.17L1467.46H 739.61L 729.29H 882.07L 391.47H 1231.81L 592.20H 1538.37L 810.61H 746.24L 836.87H 1429.76L 825.01H 3036.41L 863.04H 973.18L 408.00H 223.57L 615.75H 808.83L 872.97H 2094.31L 443.56H 670.83L 994.91H 952.12L 634.88H 395.82L 637.80H 670.10L 2039.36H 861.44L 654.21H 830.33L 95.27H 499.02L 708.59H 672.32L 579.34H 294.34L 1216.93H 1838.84L/Air, the front surface film system 1 can realize high transmittance of 11500-12500nm wave bands, and simultaneously realize high cut-off of 6500-11200nm wave bands and 12800-14500nm wave bands, and the back surface film system 3 can enable visible light to reach a front cut-off film system of-6500 nm.
Embodiment III:
as shown in FIG. 4, the embodiment of the invention provides a far infrared band filter with a working wave band of 11500-12500nm, which comprises a far infrared band filter, wherein the absolute transmittance of the filter in a substrate 2 is less than or equal to 1.0% in the wave band range of visible light-11200 nm and 12800-14500 nm;
the light filter has a transmittance less than or equal to 5.0% in the wave band range of 11200-11250nm and 12750-12800 nm;
the filter has absolute transmittance of more than or equal to 88% in the range of 11500-12500nm, average transmittance of more than or equal to 92%, and far infrared band-pass filter has higher transmittance in the operating band of 11500-12500nm and is highly cut off in other bands.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (2)
1. The far infrared band filter with the working wave band of 11500-12500nm comprises a front surface film system (1), a substrate (2) and a back surface film system (3), and is characterized in that: the positive film system (1) is formed by alternately superposing zinc sulfide layers and germanium film layers, wherein the total number of the zinc sulfide layers and the germanium film layers is 46;
the substrate (2) is a germanium sheet, the diameter of the substrate is 20mm, the thickness of the substrate is 1mm, two sides of the germanium substrate are polished, and a front surface film system (1) and a back surface film system (2) are respectively plated on the two sides;
the back film system (3) is formed by alternately superposing zinc sulfide layers and germanium film layers, wherein the total number of the zinc sulfide layers and the germanium film layers is 76;
the positive film system (1) is a high-transmission section main peak film system, wherein the inlet = 12000nm, H represents the physical thickness of a germanium film layer, and L represents the physical thickness of a ZnS film layer;
the positive film system (1) mainly comprises: sub/200.00H 165.76L 546.75H 484.74L 379.64H 581.13L 392.43H 570.42L 419.89H 590.83L 334.55H 615.23L 341.37H 600.55L 319.22H 574.20L 348.56H 578.95L 343.77H 503.72L 229.09H 477.32L 169.41H 562.28L 272.79H 415.94L 274.22H 515.25L 190.66H 499.52L 153.10H 559.69L 262.34H 466.80L 293.55H 355.93L 197.04H 473.36L 163.63H 185.15L 305.82H 205.92L 223.92H 241.73L 282.80H 269.99L 143.28H 222.65L 294.81H 270.79L201.34H 191.01L 302.41H 236.64L 142.72H 278.50L 277.75H 300.27L 155.51H 205.33L191.19H 159.56L 165.37H 255.97L 117.34H 391.25L 81.35H 327.36L 147.08H 164.23L232.69H 67.04L 209.66H 256.55L 90.24H 1153.89L/Air;
the back film system (3) is a front cut-off film system with a visible light-6500 nm wave band, wherein the front cut-off film system is of 5500nm, H represents the physical thickness of a germanium film layer, and L represents the physical thickness of a ZnS film layer;
the back film system (3) mainly comprises: sub/235.70H 881.43L 1647.08H 650.17L1467.46H 739.61L 729.29H 882.07L 391.47H 1231.81L 592.20H 1538.37L 810.61H 746.24L 836.87H 1429.76L 825.01H 3036.41L 863.04H 973.18L 408.00H 223.57L 615.75H 808.83L 872.97H 2094.31L 443.56H 670.83L 994.91H 952.12L 634.88H 395.82L 637.80H 670.10L 2039.36H 861.44L 654.21H 830.33L 95.27H 499.02L 708.59H 672.32L 579.34H 294.34L 1216.93H 1838.84L/Air.
2. A far infrared band filter having an operating band of 11500-12500nm as set forth in claim 1, wherein: the absolute transmittance of the optical filter in the substrate (2) is less than or equal to 1.0% in the wave band range of visible light-11200 nm and 12800-14500 nm;
the light filter has a transmittance less than or equal to 5.0% in the wave band range of 11200-11250nm and 12750-12800 nm;
the absolute transmittance of the optical filter is more than or equal to 88% and the average transmittance is more than or equal to 92% in the wave band range of 11500-12500 nm.
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| CN202111682816.3A CN114355496B (en) | 2021-12-30 | 2021-12-30 | Far infrared band filter with working wave band of 11500-12500nm |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111682816.3A CN114355496B (en) | 2021-12-30 | 2021-12-30 | Far infrared band filter with working wave band of 11500-12500nm |
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| CN114355496B true CN114355496B (en) | 2024-02-02 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205374789U (en) * | 2016-01-28 | 2016-07-06 | 苏州晶鼎鑫光电科技有限公司 | Working wavelength range is 3900 -5500nm's well infrared band pass filter |
| CN205374788U (en) * | 2016-01-28 | 2016-07-06 | 苏州晶鼎鑫光电科技有限公司 | Working wavelength range is 3800 -5200nm's well infrared band pass filter |
| WO2020244223A1 (en) * | 2019-06-05 | 2020-12-10 | 信阳舜宇光学有限公司 | Optical filter plate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10254445B2 (en) * | 2016-03-16 | 2019-04-09 | Adam Khan | Diamond coated antireflective window system and method |
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2021
- 2021-12-30 CN CN202111682816.3A patent/CN114355496B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205374789U (en) * | 2016-01-28 | 2016-07-06 | 苏州晶鼎鑫光电科技有限公司 | Working wavelength range is 3900 -5500nm's well infrared band pass filter |
| CN205374788U (en) * | 2016-01-28 | 2016-07-06 | 苏州晶鼎鑫光电科技有限公司 | Working wavelength range is 3800 -5200nm's well infrared band pass filter |
| WO2020244223A1 (en) * | 2019-06-05 | 2020-12-10 | 信阳舜宇光学有限公司 | Optical filter plate |
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| CN114355496A (en) | 2022-04-15 |
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