CN114335095A - Display panel and display device - Google Patents
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- CN114335095A CN114335095A CN202111610763.4A CN202111610763A CN114335095A CN 114335095 A CN114335095 A CN 114335095A CN 202111610763 A CN202111610763 A CN 202111610763A CN 114335095 A CN114335095 A CN 114335095A
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
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Abstract
The invention relates to the technical field of display, and discloses a display panel and a display device, wherein the display panel comprises an array substrate and a color film substrate; the array substrate includes: a first substrate having a plurality of sub-pixel regions; a TFT circuit layer on the first substrate; the laser diodes are positioned on one side, away from the first substrate, of the TFT circuit layer and correspond to the sub-pixel regions one to one; the color film substrate comprises: a second substrate opposite to the first substrate; and the color conversion layer is positioned on one side of the second substrate facing the second substrate, comprises a plurality of color conversion films in one-to-one correspondence with the laser diodes, and at least part of the color conversion films contain quantum dots. In the display panel, the laser which can be emitted by each laser diode is collimated, when the laser is emitted to the color conversion film, the emission crosstalk is avoided, light rays cannot irradiate other sub-pixel areas, and the color crosstalk problem of the display panel is solved to a great extent, so that the color purity and the display color gamut of the display panel are improved.
Description
Technical Field
The present invention relates to the field of display technologies, and in particular, to a display panel and a display device.
Background
The light emission spectrum of a Quantum Dot (QD) material has a narrow half-peak width, so that the QD has potential application values in the fields of photoluminescence display and electroluminescence display, and a QD-OLED (display combining quantum dot and organic electroluminescence diode technologies) is a typical representative of the QD material photoluminescence display. In the double-box type QD-OLED structure, due to the existence of the TFE packaging layer and the middle filling layer, a larger box thickness exists between the light emitting layer and the QD color film, and the interference of large-angle light emitting among sub-pixels is easily caused due to the absence of a light blocking structure except PDL (pixel definition layer) and BM (black matrix) among adjacent sub-pixels, so that the QD-OLED has the problems of low brightness, color crosstalk and the like, and the display color gamut and the color purity of a screen are reduced.
Disclosure of Invention
The invention discloses a display panel and a display device, wherein in each sub-pixel area of the display panel, laser which can be emitted by a laser diode is collimated, the light-emitting angle of each laser diode is smaller, the laser can be irradiated in a corresponding color conversion film in a collimated manner, when the laser is irradiated to the color conversion film, emission crosstalk is avoided, light cannot be irradiated to other sub-pixel areas, the color crosstalk problem of the display panel is solved to a great extent, particularly the color crosstalk problem of the display panel with a box-type structure, and therefore the color purity and the display color gamut of the display panel are improved.
In order to achieve the purpose, the invention provides the following technical scheme:
a display panel, comprising: the array substrate and the color film substrate are in box alignment with the array substrate; the array substrate includes:
a first substrate having a plurality of sub-pixel regions thereon;
a TFT circuit layer on the first substrate;
the laser diodes are positioned on one side, away from the first substrate, of the TFT circuit layer, and the laser diodes are arranged in one-to-one correspondence with the sub-pixel regions;
the color film substrate comprises:
a second substrate opposite the first substrate;
and the color conversion layer is positioned on one side of the second substrate facing the second substrate, comprises a plurality of color conversion films in one-to-one correspondence with the laser diodes, and at least part of the color conversion films contain quantum dots.
In the display panel, in each sub-pixel area, the laser which can be emitted by the laser diode is collimated, the light emitting angle of each laser diode is small, the laser can be irradiated in the corresponding color conversion film in a collimated manner, when the laser is irradiated to the color conversion film, the emission crosstalk is avoided, light cannot be irradiated to other sub-pixel areas, the problem of color crosstalk of the display panel is solved to a great extent, particularly the problem of color crosstalk of the display panel with a box-type structure is solved, and therefore the color purity and the display color gamut of the display panel are improved.
Optionally, the laser diode includes a bottom distributed bragg reflector, a light emitting diode, and a top distributed bragg reflector, which are sequentially stacked on the TFT circuit layer.
Optionally, the light emitting diode comprises an organic electroluminescent diode, a MiniLED, a micro led or a quantum dot electroluminescent diode.
Optionally, the bottom distributed bragg reflector includes at least one first dielectric layer and at least one second dielectric layer, the number of the first dielectric layers is the same as the number of the second dielectric layers, the first dielectric layers and the second dielectric layers are alternately stacked, and the refractive index of the first dielectric layer is different from the refractive index of the second dielectric layer;
the top distributed Bragg reflector comprises at least one third dielectric layer and at least one fourth dielectric layer, wherein the third dielectric layers and the fourth dielectric layers are alternately stacked, the number of the third dielectric layers is the same as that of the fourth dielectric layers, and the refractive index of the third dielectric layers is different from that of the fourth dielectric layers.
Optionally, the first dielectric layer includes TiO2The second dielectric layer comprises SiO2(ii) a And/or the presence of a gas in the gas,
the third dielectric layer comprises ZnS, and the fourth dielectric layer comprises MgF2。
Optionally, scattering particles are contained within each of the color conversion films.
Optionally, the light emitted by the laser diode is blue, and part of the color conversion film contains the quantum dots, and in the color conversion film containing the quantum dots, part of the quantum dots contained in the color conversion film are red quantum dots, and the other part of the quantum dots contained in the color conversion film are green quantum dots.
Optionally, the color film substrate further includes a color film layer located between the second substrate and the color conversion layer, where the color film layer includes a plurality of color resistors corresponding to the color conversion films one to one, and a black matrix located around the color resistors.
Optionally, the color filter substrate further includes:
a barrier layer positioned around the color conversion film;
a first encapsulation layer overlying the color conversion film and the barrier layer.
Optionally, the array substrate further includes:
a pixel defining layer on the TFT circuit layer and around the laser diode;
a second encapsulation layer overlying the laser diode and the pixel defining layer.
The invention also provides a display device which comprises any one display panel provided by the technical scheme.
Drawings
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a laser diode according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a laser diode according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a light reflection path in a top distributed Bragg reflector according to an embodiment of the present invention;
icon: 1-an array substrate; 2-a color film substrate; 3-filling glue; 11-a first substrate; 12-a TFT circuit layer; 13-a laser diode; 14-a pixel defining layer; 15-a second encapsulation layer; 21-a second substrate; 22-color conversion layer; 23-a color film layer; 24-a first encapsulation layer; 221-color conversion film; 222-a barrier layer; 131-bottom distributed bragg mirror; 132-a light emitting diode; 133-top distributed bragg mirror; 1331-a first dielectric layer; 1332-a second dielectric layer; 1321-an anode; 1322-a hole injection layer; 1323-hole transport layer; 1324-a light-emitting layer; 1325-electron transport layer; 1326-electron injection layer; 1327-transparent cathode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 and 2, an embodiment of the present invention provides a display panel including: the array substrate comprises an array substrate 1 and a color film substrate 2 which is paired with the array substrate 1; the array substrate comprises a first substrate 11, wherein the first substrate 11 is provided with a plurality of sub-pixel regions which can be distributed in an array; a TFT circuit layer 12 is disposed on the first substrate 11, a plurality of laser diodes 13 are disposed on a side of the TFT circuit layer 12 away from the first substrate 11, the plurality of laser diodes 13 are disposed in one-to-one correspondence with the sub-pixel regions, the plurality of laser diodes 13 are also distributed in an array, specifically, the plurality of laser diodes 13 may be distributed in a matrix of rows and columns, each laser diode 13 may be individually controlled, and each laser diode 13 emits collimated laser light to form an individual light source; in addition, the color filter substrate includes a second substrate 21, the second substrate 21 is opposite to the first substrate 11, the side of the second substrate 21 is a light-emitting side, and specifically, the second substrate 21 may be a glass substrate; the color conversion layer 22 is arranged on one side of the second substrate 21 facing the second substrate 21, the color conversion layer 22 comprises a plurality of color conversion films 221 corresponding to the laser diodes 13 one by one, and at least a part of the color conversion films 221 in the plurality of color conversion films 221 contains quantum dots, the quantum dots are light-induced quantum dots, and the quantum dots in the color conversion films 221 can emit light rays with preset colors by light excitation so as to achieve the display effect; in the display panel, in each sub-pixel region, the laser emitted by the laser diode 13 is collimated, the light emitting angle of each laser diode 13 is small, the collimated laser can be irradiated in the corresponding color conversion film 221, when the laser is irradiated to the color conversion film 221, emission crosstalk is avoided, light cannot be irradiated to other sub-pixel regions, the color crosstalk problem of the display panel, particularly the color crosstalk problem of the display panel with a box structure, is solved to a great extent, and therefore the color purity and the display color gamut of the display panel are improved.
In specific implementation, referring to fig. 1, as shown in fig. 2, the laser diode 13 may include a bottom distributed bragg reflector 131, a light emitting diode 132, and a top distributed bragg reflector 133, which are sequentially stacked on the TFT circuit layer 12, each light emitting diode 132 is controlled individually, light emitted by the light emitting diode 132 is reflected by the bottom distributed bragg reflector and the top distributed bragg reflector for multiple times to form coherent light, and the coherent light is emitted at the side of the top distributed bragg reflector after reaching a preset emission condition, and the emitted light has collimation property, and the light emitting effect of the laser diode 13 is good, and the overall structure of the laser diode 13 is simple and is convenient to prepare. Note that a reflective layer is provided between the bottom distributed bragg reflector and the TFT circuit layer 12, so that light on the side of the bottom distributed bragg reflector is reflected, or a reflective layer corresponding to the bottom distributed bragg reflector is provided in the TFT circuit layer 12, so that light is emitted from the side of the top distributed bragg reflector.
Preferably, the light emitting diode may be an organic electroluminescent diode, a MiniLED, a micro led, a quantum dot electroluminescent diode, or other micro individually controllable light sources, which is not limited in this embodiment. Specifically, as shown in fig. 3, the organic electroluminescent diode may include an anode 1321, a hole injection layer 1322, a hole transport layer 1323, a light emitting layer 1324, an electron transport layer 1325, an electron injection layer 1326, and a transparent cathode 1327, which are sequentially stacked, and current is injected into the organic electroluminescent diode from the two electrodes to cause recombination light emission in the light emitting layer, thereby stabilizing light emission.
Specifically, the bottom distributed bragg reflector comprises at least one first dielectric layer and at least one second dielectric layer, the number of the first dielectric layers is the same as that of the second dielectric layers, the first dielectric layers and the second dielectric layers are alternately stacked, the refractive index of the first dielectric layers is different from that of the second dielectric layers, specifically, the refractive index of the second dielectric layers can be set to be larger than that of the first dielectric layers, one first dielectric layer and one second dielectric layer are a pair, and the bottom distributed bragg reflector is composed of at least one pair of the first dielectric layers and the second dielectric layers; the top distributed Bragg reflector comprises at least one third dielectric layer and at least one fourth dielectric layer, the third dielectric layers and the fourth dielectric layers are alternately stacked, the number of the third dielectric layers is the same as that of the fourth dielectric layers, the refractive index of the third dielectric layers is different from that of the fourth dielectric layers, specifically, the refractive index of the third dielectric layers can be set to be larger than that of the fourth dielectric layers, one third dielectric layer and one fourth dielectric layer form a pair, and the bottom distributed Bragg reflector comprises at least one pair of the third dielectric layers and the fourth dielectric layers.
Wherein, the first dielectric layer can be TiO2A layer having a refractive index of about 1.5, and a second dielectric layer which may be SiO2A layer having a refractive index of about 2.4; or the third dielectric layer is a ZnS layer with the refractive index of about 2.38, and the fourth dielectric layer comprises MgF2Layer, refractionThe rate was about 2.35; alternatively, the first dielectric layer may be TiO2The second dielectric layer may be SiO2A layer; meanwhile, the third dielectric layer is a ZnS layer, and the fourth dielectric layer comprises MgF2And (3) a layer. It should be noted that the third dielectric layer and the first dielectric layer may be made of the same material, and the fourth dielectric layer and the second dielectric layer may be made of the same material, that is, the bottom distributed bragg reflector and the top distributed bragg reflector may have the same structure, as long as two dielectric layers with different refractive indexes are alternately stacked according to a certain thickness period, and the larger the difference between the refractive indexes of the two dielectric layers is, the better the difference between the refractive indexes of the two dielectric layers is, the specific material selection for the two dielectric layers may be selected according to actual requirements, which is not limited in this embodiment.
In addition, for the thickness setting of two medium layers in the distributed Bragg reflector, the refractive index n of the medium layersiCenter wavelength λ of distributed Bragg reflector0The single layer thickness of the dielectric layer can be λ0/(4ni). Taking the top distributed bragg reflector as an example, and as shown in fig. 4, taking the structure of two pairs of the first dielectric layer 1331 and the second dielectric layer 1332 as an example, when incident light is emitted from the first dielectric layer 1331 (optically thinner medium) to the second dielectric layer 1332 (optically denser medium), half-wave loss occurs at an interface of reflected light, a change of pi occurs in a phase, light enters the top distributed bragg reflector and is reflected once on the upper and lower surfaces of each layer, according to the design principle of the top distributed bragg reflector, when the working center wavelength of the top distributed bragg reflector is λ, the single-layer thickness of the dielectric layer is λ/(4 n), and the single-layer thickness of the dielectric layer is λ/(4 n)i) When the light is reflected on the upper surface, the phase change of pi is generated because half-wave loss occurs when the light is reflected on the upper surface, finally the phases of the reflected light on the upper surface and the reflected light on the lower surface are the same, superposition is enhanced, namely the total reflection coefficient is increased, and finally emergent light meeting the emergent condition is formed, the top distributed Bragg reflector is actually formed by alternately laminating two mediums with different refractive indexes, the more the number of the layers of the medium layers is, the higher the reflectivity is, and finally the top distributed Bragg reflector is formedThe reflection coefficient of the mirror can reach a very high level, the reflectivity of the top distributed Bragg reflector is determined by the refractive index difference of each layer of material and the logarithm of the dielectric layer in the composition, the reflection bandwidth of the top distributed Bragg reflector depends on the refractive index ratio of the two dielectric layer materials and the central wavelength lambda of the top distributed Bragg reflector, and the larger the refractive index difference of the two materials forming the top distributed Bragg reflector is, the better the reflection bandwidth and the larger the reflection bandwidth are.
Specifically, in one possible embodiment, the wavelength of the emergent light of the top distributed Bragg reflector is set to be called as the working center wavelength lambda, and the refractive index n of the first medium layer1Refractive index n of the second dielectric layer2Wherein the single layer thickness of the first dielectric layer can be set to be lambda/(4 n)1) The single-layer thickness of the second dielectric layer can be set to be lambda/(4 n)2) And, the first dielectric layer and the second dielectric layer in the distributed Bragg reflector of top can be set up as the multilayer, the reflection efficiency is higher, and a pair of first dielectric layer and second dielectric layer can be a setting cycle, when the distributed Bragg reflector of top sets up as 10 cycles, the reflectivity almost reaches 100%, and the reflection bandwidth also keeps unchanged almost, so, can ask the number of cycles of setting up first dielectric layer and second dielectric layer according to the actual need, on the basis of meeting the reflection optical efficiency, the thickness of the distributed Bragg reflector of top is rationally selected, can reduce the thickness of the display panel effectively.
Wherein the light reflection of the bottom distributed bragg reflector is far from the same as that of the top distributed bragg reflector, and similarly, for the arrangement of the bottom distributed bragg reflector, in one possible embodiment, the set wavelength of the emergent light of the bottom distributed bragg reflector is called the working center wavelength λ1Refractive index n of third dielectric layer3Refractive index n of fourth dielectric layer4Wherein the single layer thickness of the third dielectric layer can be set to be lambda1/(4n3) The single-layer thickness of the fourth dielectric layer can be set to be lambda1/(4n4) And, a third dielectric layer and a fourth dielectric layer in the bottom DBR mirrorThe more the number of the four dielectric layers is stacked, the higher the reflection efficiency is, and a pair of the third dielectric layer and the fourth dielectric layer can be a set period, when the bottom distributed Bragg reflector is set to be 10 periods, the reflectivity almost reaches 100%, and the reflection bandwidth is almost kept unchanged, so that the period number of the third dielectric layer and the fourth dielectric layer can be set according to actual requirements, the thickness of the bottom distributed Bragg reflector is reasonably selected on the basis of meeting the reflection light efficiency, and the thickness of the display panel can be effectively reduced.
In one possible embodiment, each color conversion film 221 contains scattering particles, and the scattering particles are disposed in the color conversion film 221, wherein on one hand, in the color conversion film 221 having quantum dots, the optical path length of the excitation light in color conversion can be increased to improve the color conversion efficiency, and on the other hand, the collimated light incident on the color conversion film 221 can be diverged to improve the display viewing angle of the display panel. Specifically, the material of the scattering particles may be TiO 2.
In one possible embodiment, the light emitted by the laser diode 13 is blue, that is, the laser diode 13 is a blue light source, and blue light is used as excitation light, and the excitation effect is better, a part of the color conversion films 221 includes quantum dots in the color conversion films 221, another part of the color conversion films 221 not including quantum dots can directly emit blue light as blue sub-pixels, and in the color conversion films 221 including quantum dots, the quantum dots included in a part of the color conversion films 221 are red quantum dots, and the red quantum dots can convert blue light into red light after being excited by the blue light to become red sub-pixels, and the quantum dots included in a part of the color conversion films 221 are green quantum dots, and the green quantum dots can convert blue light into green light after being excited by the blue light to become green sub-pixels, wherein the color conversion films 221 of three different colors can be sequentially arranged to form three primary color sub-pixels, the three primary color sub-pixels form a pixel unit, and are circularly and repeatedly arranged to form matrix distribution, so that the display function is realized.
Preferably, the material of the quantum dot may be a cadmium-based material or a non-cadmium-based material, and the embodiment is not limited.
In a possible implementation manner, as shown in fig. 1, the color film substrate further includes a color film layer 23 located between the second substrate 21 and the color conversion layer 22, where the color film layer 23 includes a plurality of color resistors corresponding to the color conversion films 221 one to one and a black matrix located around the color resistors, where specifically, the plurality of color resistors includes color resistors of three colors, a red resistor, a green resistor, and a blue resistor, and more specifically, the color resistors of the three colors may be respectively set corresponding to the color conversion films 221 having the same color as the color resistors of the color resistors, and the color resistors may perform a filtering function, so that each sub-pixel region emits light with higher color purity, and the display effect is improved.
In the display panel, as shown in fig. 1, the color film substrate further includes: a barrier layer 222 disposed around the color conversion film 221, and a first encapsulation layer 24 covering the color conversion film 221 and the barrier layer 222; and the array substrate further comprises: the liquid crystal display panel comprises a pixel defining layer 14 which is positioned on a TFT circuit layer 12 and around a laser diode 13, and a second packaging layer 15 which covers the laser diode 13 and the pixel defining layer 14, wherein a color film substrate and an array substrate are paired together through filling glue 3, the filling glue 3 is arranged between the color film substrate and the array substrate, and specifically, the filling glue 3 is arranged between a first packaging layer 24 and the second packaging layer 15, so that the color film substrate and the array substrate are stably paired and connected.
Based on the same inventive concept, the invention also provides a display device comprising any one of the display panels provided in the above embodiments.
It will be apparent to those skilled in the art that various changes and modifications may be made in the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (11)
1. A display panel, comprising: the array substrate and the color film substrate are in box alignment with the array substrate; the array substrate includes:
a first substrate having a plurality of sub-pixel regions thereon;
a TFT circuit layer on the first substrate;
the laser diodes are positioned on one side, away from the first substrate, of the TFT circuit layer, and the laser diodes are arranged in one-to-one correspondence with the sub-pixel regions;
the color film substrate comprises:
a second substrate opposite the first substrate;
and the color conversion layer is positioned on one side of the second substrate facing the second substrate, comprises a plurality of color conversion films in one-to-one correspondence with the laser diodes, and at least part of the color conversion films contain quantum dots.
2. The display panel according to claim 1, wherein the laser diode includes a bottom distributed bragg reflector, a light emitting diode, and a top distributed bragg reflector, which are sequentially stacked on the TFT circuit layer.
3. The display panel of claim 2, wherein the light emitting diodes comprise organic electroluminescent diodes, minileds, micro leds, or quantum dot electroluminescent diodes.
4. The display panel according to claim 2, wherein the bottom distributed bragg reflector comprises at least one first dielectric layer and at least one second dielectric layer, the number of the first dielectric layers is the same as that of the second dielectric layers, the first dielectric layers and the second dielectric layers are alternately stacked, and the refractive index of the first dielectric layers is different from that of the second dielectric layers;
the top distributed Bragg reflector comprises at least one third dielectric layer and at least one fourth dielectric layer, wherein the third dielectric layers and the fourth dielectric layers are alternately stacked, the number of the third dielectric layers is the same as that of the fourth dielectric layers, and the refractive index of the third dielectric layers is different from that of the fourth dielectric layers.
5. The display panel of claim 4, wherein the first dielectric layer comprises TiO2The second dielectric layer comprises SiO2(ii) a And/or the presence of a gas in the gas,
the third dielectric layer comprises ZnS, and the fourth dielectric layer comprises MgF2。
6. The display panel of claim 1, wherein each of the color conversion films contains scattering particles.
7. The display panel according to any one of claims 1 to 6, wherein light emission of the laser diode is blue, and the quantum dots are included in a part of the color conversion film, and wherein in the color conversion film including the quantum dots, a part of the quantum dots included in the color conversion film are red quantum dots, and another part of the quantum dots included in the color conversion film are green quantum dots.
8. The display panel according to any one of claims 1 to 6, wherein the color filter substrate further includes a color filter layer located between the second substrate and the color conversion layer, and the color filter layer includes a plurality of color resistors corresponding to the color conversion layers one to one, and a black matrix located around the color resistors.
9. The display panel according to any one of claims 1 to 6, wherein the color filter substrate further comprises:
a barrier layer positioned around the color conversion film;
a first encapsulation layer overlying the color conversion film and the barrier layer.
10. The display panel according to any one of claims 1 to 6, wherein the array substrate further comprises:
a pixel defining layer on the TFT circuit layer and around the laser diode;
a second encapsulation layer overlying the laser diode and the pixel defining layer.
11. A display device characterized by comprising the display panel according to any one of claims 1 to 10.
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| CN202111610763.4A CN114335095A (en) | 2021-12-27 | 2021-12-27 | Display panel and display device |
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| JP2006173562A (en) * | 2004-11-22 | 2006-06-29 | National Institute Of Information & Communication Technology | Surface-emitting laser device for optical communication wavelength using antimony-based material, its image forming apparatus and information relay system |
| CN110379938A (en) * | 2019-07-26 | 2019-10-25 | 中国科学院长春光学精密机械与物理研究所 | Asymmetric ultraviolet microclimate method of one kind and preparation method thereof |
| CN111063826A (en) * | 2019-12-16 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | Display panel |
| WO2021035957A1 (en) * | 2019-08-30 | 2021-03-04 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot oled display panel |
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2021
- 2021-12-27 CN CN202111610763.4A patent/CN114335095A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006173562A (en) * | 2004-11-22 | 2006-06-29 | National Institute Of Information & Communication Technology | Surface-emitting laser device for optical communication wavelength using antimony-based material, its image forming apparatus and information relay system |
| CN110379938A (en) * | 2019-07-26 | 2019-10-25 | 中国科学院长春光学精密机械与物理研究所 | Asymmetric ultraviolet microclimate method of one kind and preparation method thereof |
| WO2021035957A1 (en) * | 2019-08-30 | 2021-03-04 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot oled display panel |
| CN111063826A (en) * | 2019-12-16 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | Display panel |
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