CN114334775A - Wafer assembly with carrier plate and preparation and debonding method thereof - Google Patents
Wafer assembly with carrier plate and preparation and debonding method thereof Download PDFInfo
- Publication number
- CN114334775A CN114334775A CN202111469217.3A CN202111469217A CN114334775A CN 114334775 A CN114334775 A CN 114334775A CN 202111469217 A CN202111469217 A CN 202111469217A CN 114334775 A CN114334775 A CN 114334775A
- Authority
- CN
- China
- Prior art keywords
- wafer
- carrier plate
- release layer
- layer
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a wafer assembly with a carrier plate and a preparation and debonding method thereof, wherein the wafer assembly comprises the following components: wafer and support plate, the wafer is fixed in the support plate through release layer and adhesion layer, and wherein, the release layer includes: the wafer-level packaging structure comprises a first release layer and a second release layer, wherein the surface of the carrier plate facing the wafer is provided with the first release layer, the surface of the wafer facing the carrier plate is provided with the second release layer, and the adhesion layer is located between the first release layer and the second release layer. In the invention, the adhesion layer is not directly attached to the surface of the wafer when the wafer is bonded with the carrier plate. Therefore, when the wafer and the carrier plate are bonded, the surface of the wafer does not need to be cleaned and removed by the adhesive layer, the problem of stress damage caused by removing the adhesive layer on the surface of the wafer can be avoided, and the processing and preparation of the ultrathin wafer can be realized. And moreover, the processing efficiency of the wafer is improved, and the yield of wafer preparation is improved.
Description
Technical Field
The invention relates to the technical field of wafer preparation, in particular to a wafer assembly with a carrier plate and a preparation and debonding method thereof.
Background
In the related art, a carrier plate is used to support and fix a wafer during a process of preparing the wafer. The carrier plate and the wafer are usually fixedly connected through the release layer and the adhesive layer, however, when the carrier plate and the wafer are separated, the adhesive on the surface of the wafer is inconvenient to clean and remove, and when the adhesive on the surface of the wafer is removed, the surface of the wafer is easily damaged, and the yield of the wafer is affected.
Disclosure of Invention
The invention aims to solve the technical problem that in the prior art, when a wafer is separated from a carrier plate, an adhesive on the surface of the wafer is inconvenient to clean and remove, and provides a wafer assembly with the carrier plate and a preparation and debonding method thereof
The wafer assembly with the carrier plate according to the embodiment of the invention comprises: the wafer is fixed on the carrier plate through a release layer and an adhesion layer, wherein the release layer comprises: the wafer comprises a first release layer and a second release layer, the surface of the carrier plate facing the wafer is provided with the first release layer, the surface of the wafer facing the carrier plate is provided with the second release layer, and the adhesion layer is located between the first release layer and the second release layer.
According to some embodiments of the present invention, the surface of the wafer facing the carrier plate is already prepared with metal blocks and polyimide layers.
In some embodiments of the present invention, the first release layer is a transparent material satisfying a predetermined transmittance requirement.
According to some embodiments of the invention, the adhesive layer has a thickness h3And satisfies the following conditions: h is3Less than or equal to 10mm, the thickness h of the release layer4And satisfies the following conditions: h is not less than 24Less than or equal to 4 mu m, the thickness h of the metal block1And satisfies the following conditions: h is not less than 51Less than or equal to 8 μm, the thickness h of the polyimide layer2And satisfies the following conditions: h is2＞10μm。
In some embodiments of the present invention, the surface of the circle facing the carrier plate has been prepared with metal bumps and bumps, and the second release layer is prepared on the surface of the wafer facing the carrier plate by using a CVD process.
According to some embodiments of the invention, the carrier is a glass carrier, a quartz carrier or a silicon-based carrier.
According to the embodiment of the invention, the method for preparing the wafer assembly with the carrier plate is used for preparing the wafer assembly with the carrier plate, and comprises the following steps:
a100, preparing a first release layer on the surface of a carrier plate, preparing a second release layer on the surface of a wafer, and coating an adhesion layer on the first release layer or the second release layer;
a200, stacking the carrier plate and the wafer, and enabling the adhesion layer to be located between the first release layer and the second release layer;
and A300, irradiating or heating the carrier plate and the wafer which are stacked, so that the wafer is fixed on the carrier plate through the first release layer, the adhesion layer and the second release layer, and a wafer assembly with the carrier plate is formed.
According to some embodiments of the present invention, the preparation of the metal block and the polyimide layer is performed on the surface of the wafer before the preparation of the second release layer on the surface of the wafer.
In some embodiments of the present invention, before the second release layer is prepared on the surface of the wafer, the preparation of the metal bumps and the bumps is completed on the surface of the wafer, and the second release layer is prepared on the surface of the wafer by using a CVD process.
According to the embodiment of the invention, the method for debonding the wafer assembly with the carrier plate is used for debonding the wafer assembly with the carrier plate, and comprises the following steps:
b100, attaching the back of the wafer to the cutting mold frame;
b200, performing debonding on the wafer assembly with the carrier plate to separate the wafer from the carrier plate;
and B300, removing the second release layer on the surface of the wafer.
The wafer assembly with the carrier plate and the preparation and debonding method thereof provided by the invention have the following advantages:
in the invention, the adhesion layer is not directly attached to the surface of the wafer when the wafer is bonded with the carrier plate. Therefore, when the wafer and the carrier plate are bonded, the surface of the wafer does not need to be cleaned and removed by the adhesive layer, the problem of stress damage caused by removing the adhesive layer on the surface of the wafer can be avoided, and the processing and preparation of the ultrathin wafer can be realized. And moreover, the processing efficiency of the wafer is improved, and the yield of wafer preparation is improved.
Drawings
FIG. 1 is a flow chart of a method for fabricating a wafer assembly having a carrier plate according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a carrier substrate provided with a first release layer and an adhesive layer on a surface thereof according to an embodiment of the invention;
FIG. 3 is a schematic structural diagram illustrating a second release layer after the polyimide layer on the surface of the wafer is prepared according to an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating a bonded wafer assembly having a carrier according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram illustrating a wafer assembly with a carrier plate after a metal block is prepared on a backside thereof according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a wafer assembly with a carrier plate after the back surface of the wafer assembly is attached to a dicing mold frame according to an embodiment of the invention;
FIG. 7 is a schematic structural diagram of a wafer assembly with a carrier after debonding the carrier according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram illustrating a wafer with a second release layer removed from the surface thereof according to an embodiment of the present invention;
FIG. 9 is a schematic structural diagram illustrating a second release layer after completing the metal bumps and bumps on the surface of the wafer according to an embodiment of the invention;
FIG. 10 is a schematic structural diagram illustrating a carrier bonded to a wafer according to an embodiment of the present invention;
fig. 11 is a flowchart illustrating a method for debonding a wafer assembly having a carrier according to an embodiment of the present invention.
Reference numerals:
the wafer 10, the metal blocks 110, the polyimide layer 120, the bumps 130,
a carrier plate 20 is provided on the substrate,
the release layer 30, the first release layer 310, the second release layer 320,
an adhesive layer 40, and a cutting mold frame 50.
Detailed Description
To further explain the technical means and effects of the present invention adopted to achieve the intended purpose, the present invention will be described in detail with reference to the accompanying drawings and preferred embodiments.
The description of the method flow in the present specification and the steps of the flow chart in the drawings of the present specification are not necessarily strictly performed by the step numbers, and the execution order of the method steps may be changed. Moreover, certain steps may be omitted, multiple steps may be combined into one step execution, and/or a step may be broken down into multiple step executions.
As shown in fig. 4 and 10, a wafer assembly having a carrier plate 20 according to an embodiment of the present invention includes: wafer 10 and carrier plate 20, wafer 10 is fixed to carrier plate 20 through release layer 30 and adhesion layer 40, wherein, release layer 30 includes: a first release layer 310 and a second release layer 320, wherein the surface of the carrier 20 facing the wafer 10 is provided with the first release layer 310, the surface of the wafer 10 facing the carrier 20 is provided with the second release layer 320, and the adhesive layer 40 is located between the first release layer 310 and the second release layer 320.
In the invention, the wafer 10 and the carrier 20 are bonded and fixed by the adhesive layer 40 and the release layer 30, wherein the surface of the carrier 20 is provided with the first release layer 310, the surface of the wafer 10 is provided with the second release layer 320, and the adhesive layer 40 is located between the first release layer 310 and the second release layer 320. Therefore, when the wafer 10 and the carrier plate 20 are separated, the adhesive layer 40 will not adhere to the surface of the wafer 10, thereby avoiding the problem of cleaning and removing the adhesive layer 40 on the surface of the wafer 10.
According to some embodiments of the present invention, as shown in fig. 3, the surface of the wafer 10 facing the carrier 20 has been prepared with metal blocks 110 and polyimide layer 120. It is understood that after the metal blocks 110 and the polyimide layer 120 are formed on the surface of the wafer 10, the polyimide layer 120 may be used to planarize the surface of the wafer 10, thereby facilitating the preparation of the second release layer 320 on the surface of the wafer 10 and the laser dissolution bonding operation.
In some embodiments of the present invention, the first release layer 310 is a transparent material satisfying a predetermined transmittance requirement. It should be noted that, when the carrier 20 and the wafer 10 are debonded, UV ultraviolet light may be used to destroy O-N bonds and N-C bonds in the adhesive polymer material, so that the adhesive with high adhesion performance is converted into inorganic substances with low adhesion performance, thereby achieving the debonding operation between the wafer 10 and the carrier 20.
According to some embodiments of the invention, the adhesive layer 40 has a thickness h3And satisfies the following conditions: h is3Less than or equal to 10mm, thickness h of the release layer 304And satisfies the following conditions: h is not less than 24Less than or equal to 4 mu m, the thickness h of the metal block 1101And satisfies the following conditions: h is not less than 51Less than or equal to 8 μm, thickness h of the polyimide layer 1202And satisfies the following conditions: h is2> 10 μm. Through experimental verification, the firmness and reliability of bonding between the carrier plate 20 and the wafer 10 can be effectively improved by adopting the size design, and the bonding separation between the wafer 10 and the carrier plate 20 is facilitated.
In some embodiments of the present invention, as shown in fig. 9, the surface of the wafer 10 facing the carrier plate 20 is prepared by a CVD process after the preparation of the metal bumps 110 and the bumps 130 is completed on the surface of the wafer facing the carrier plate 20. It should be noted that, since the surface of the wafer 10 is prepared with the metal blocks 110 and the bumps 130, the surface of the wafer 10 is uneven, and the direct coating of the second release layer 320 has the problem of non-uniformity and non-uniformity. The second release layer 320 is formed on the surface of the wafer 10 by a CVD process, so that the uniformity and consistency of the second release layer 320 on the surface of the wafer 10 can be improved.
It should be noted that, during the de-bonding, the height of the second release layer 320 varies due to the bumps 130 on the surface of the wafer 10, and during the laser de-bonding, the laser may be adjusted to perform the regular de-bonding operation accordingly.
According to some embodiments of the present invention, the carrier 20 is a glass carrier, a quartz carrier, or a silicon-based carrier. That is, the material of the carrier 20 may be glass, quartz or silicon. In actual production, the carrier plate 20 of the corresponding material can be selected according to actual requirements.
According to the method for manufacturing a wafer assembly with a carrier plate 20 of the embodiment of the present invention, the method is used for manufacturing the wafer assembly with the carrier plate 20 as described above, as shown in fig. 1, the method includes:
a100, preparing a first release layer on the surface of a carrier plate, preparing a second release layer on the surface of a wafer, and coating an adhesion layer on the first release layer or the second release layer;
a200, stacking a carrier plate and a wafer, and enabling an adhesion layer to be located between a first release layer and a second release layer;
and A300, irradiating or heating the carrier plate and the wafer which are stacked by adopting ultraviolet light, so that the wafer is fixed on the carrier plate through the first release layer, the adhesion layer and the second release layer, and the wafer assembly with the carrier plate is formed.
According to some embodiments of the present invention, as shown in fig. 2, the preparation of the metal blocks 110 and the polyimide layer 120 is completed on the surface of the wafer 10 before the second release layer 320 is prepared on the surface of the wafer 10. It is understood that after the metal blocks 110 and the polyimide layer 120 are formed on the surface of the wafer 10, the polyimide layer 120 may be used to planarize the surface of the wafer 10, thereby facilitating the preparation of the second release layer 320 on the surface of the wafer 10.
In some embodiments of the present invention, before the second release layer 320 is formed on the surface of the wafer 10, the metal blocks 110 and the bumps 130 are formed on the surface of the wafer 10, and the second release layer 320 is formed on the surface of the wafer 10 by using a CVD process. It should be noted that, since the surface of the wafer 10 is prepared with the metal blocks 110 and the bumps 130, the surface of the wafer 10 is uneven, and the direct coating of the second release layer 320 has the problem of non-uniformity and non-uniformity. The second release layer 320 is formed on the surface of the wafer 10 by a CVD process, so that the uniformity and consistency of the second release layer 320 on the surface of the wafer 10 can be improved.
According to an embodiment of the present invention, the method is used for debonding the wafer assembly having the carrier plate 20, as shown in fig. 11, and the method includes:
b100, attaching the back of the wafer to the cutting mold frame;
fig. 6 shows a schematic structure of the wafer assembly attached to the dicing mold frame 50.
B200, performing debonding on the wafer assembly with the carrier plate to separate the wafer from the carrier plate;
and B300, removing the second release layer on the surface of the wafer.
It is understood that, since the wafer 10 and the carrier 20 are bonded in the present invention, the adhesive layer 40 is not directly attached to the surface of the wafer 10. Therefore, when the wafer 10 and the carrier plate 20 are bonded, the surface of the wafer 10 does not need to be cleaned and removed by the adhesive layer 40, and the problem of stress damage caused by removing the adhesive layer on the surface of the wafer can be avoided, so that the processing and preparation of the ultrathin wafer can be realized. And moreover, the processing efficiency of the wafer is improved, and the yield of wafer preparation is improved.
While the invention has been described in connection with specific embodiments thereof, it is to be understood that it is intended by the appended drawings and description that the invention may be embodied in other specific forms without departing from the spirit or scope of the invention.
Claims (10)
1. A wafer assembly with a carrier plate, comprising: the wafer is fixed on the carrier plate through a release layer and an adhesion layer, wherein the release layer comprises: the wafer comprises a first release layer and a second release layer, the surface of the carrier plate facing the wafer is provided with the first release layer, the surface of the wafer facing the carrier plate is provided with the second release layer, and the adhesion layer is located between the first release layer and the second release layer.
2. The wafer assembly with carrier plate of claim 1, wherein the surface of the wafer facing the carrier plate is prepared with metal blocks and polyimide layer.
3. The wafer assembly with carrier as claimed in claim 2, wherein the first release layer is a transparent material satisfying a predetermined transmittance requirement.
4. The wafer assembly with carrier plate of claim 1, wherein the adhesive layer has a thickness ofh3And satisfies the following conditions: h is3Less than or equal to 10mm, the thickness h of the release layer4And satisfies the following conditions: h is not less than 24Less than or equal to 4 mu m, the thickness h of the metal block1And satisfies the following conditions: h is not less than 51Less than or equal to 8 μm, the thickness h of the polyimide layer2And satisfies the following conditions: h is2＞10μm。
5. The wafer assembly with the carrier plate as claimed in claim 1, wherein the surface of the circle facing the carrier plate is prepared with metal bumps and bumps, and the second release layer is prepared on the surface of the wafer facing the carrier plate by using a CVD process.
6. The wafer assembly with the carrier plate of any one of claims 1 to 5, wherein the carrier plate is a glass carrier plate, a quartz carrier plate or a silicon-based carrier plate.
7. A method for producing a wafer assembly with a carrier plate, wherein the method is used for producing a wafer assembly with a carrier plate according to any one of claims 1 to 6, the method comprising:
a100, preparing a first release layer on the surface of a carrier plate, preparing a second release layer on the surface of a wafer, and coating an adhesion layer on the first release layer or the second release layer;
a200, stacking the carrier plate and the wafer, and enabling the adhesion layer to be located between the first release layer and the second release layer;
and A300, irradiating or heating the carrier plate and the wafer which are stacked, so that the wafer is fixed on the carrier plate through the first release layer, the adhesion layer and the second release layer, and a wafer assembly with the carrier plate is formed.
8. The method as claimed in claim 7, wherein the metal blocks and the polyimide layer are formed on the surface of the wafer before the second release layer is formed on the surface of the wafer.
9. The method as claimed in claim 7, wherein before the second release layer is formed on the surface of the wafer, metal bumps and bumps are formed on the surface of the wafer, and the second release layer is formed on the surface of the wafer by a CVD process.
10. A method for debonding a wafer assembly having a carrier plate, the method being for debonding a wafer assembly having a carrier plate according to any one of claims 1-5, the method comprising:
b100, attaching the back of the wafer to the cutting mold frame;
b200, performing debonding on the wafer assembly with the carrier plate to separate the wafer from the carrier plate;
and B300, removing the second release layer on the surface of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111469217.3A CN114334775A (en) | 2021-12-03 | 2021-12-03 | Wafer assembly with carrier plate and preparation and debonding method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111469217.3A CN114334775A (en) | 2021-12-03 | 2021-12-03 | Wafer assembly with carrier plate and preparation and debonding method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114334775A true CN114334775A (en) | 2022-04-12 |
Family
ID=81049592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111469217.3A Pending CN114334775A (en) | 2021-12-03 | 2021-12-03 | Wafer assembly with carrier plate and preparation and debonding method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114334775A (en) |
-
2021
- 2021-12-03 CN CN202111469217.3A patent/CN114334775A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2575163B1 (en) | Improved debonding equipment and methods for debonding temporary bonded wafers | |
| TWI446420B (en) | Releasing carrier method for semiconductor process | |
| JP6360123B2 (en) | Workpiece machining procedure and system | |
| WO2012056867A1 (en) | Stacked body and method for detaching stacked body | |
| JP2005191550A (en) | Method for sticking substrates | |
| EP1634685A2 (en) | Thin electronic chip in glass for electronic component and manufacturing process | |
| TW200524024A (en) | Protecting thin semiconductor wafers during back-grinding in high-volume production | |
| JP2004349649A (en) | Thin processing method of wafer | |
| US20200227301A1 (en) | Mounting of semiconductor-on-diamond wafers for device processing | |
| US7960247B2 (en) | Die thinning processes and structures | |
| CN109972204B (en) | Ultra-thin ultra-flat wafer and method for manufacturing the same | |
| JP2006303180A (en) | Method for fixing substrate | |
| WO2016090636A1 (en) | Temporary bonding and separation method for wafers | |
| JP4444142B2 (en) | Manufacturing method of semiconductor device | |
| JP2014107339A (en) | Wafer processing method | |
| CN114334775A (en) | Wafer assembly with carrier plate and preparation and debonding method thereof | |
| TW200306247A (en) | Method for cutting thin film filter work pieces | |
| CN102479674B (en) | Wafer manufacturing method | |
| CN109411359B (en) | Method and apparatus for processing semiconductor device structures | |
| JP6362484B2 (en) | Semiconductor wafer dicing method | |
| JP2014049537A (en) | Processing method of wafer | |
| CN111446161A (en) | Wafer cutting method | |
| JP7478234B2 (en) | Temporary adhesion method, device wafer processing method, laminate for temporary adhesion, and laminate for device wafer processing | |
| CN111446160B (en) | Method for removing inter-grain adhesive | |
| JP6125170B2 (en) | Wafer processing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |