CN114334634A - Fin structure forming method, FinFET device and fin structure forming method - Google Patents
Fin structure forming method, FinFET device and fin structure forming method Download PDFInfo
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- CN114334634A CN114334634A CN202111681692.7A CN202111681692A CN114334634A CN 114334634 A CN114334634 A CN 114334634A CN 202111681692 A CN202111681692 A CN 202111681692A CN 114334634 A CN114334634 A CN 114334634A
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Abstract
The invention provides a forming method of a fin structure, a FinFET device and a forming method of the Fin structure, wherein the forming method of the fin structure comprises the following steps: providing a substrate, wherein a fin is arranged on the substrate, the fin is of a structure with a narrow top and a wide bottom, the fin is provided with a vertical part and an inclined part, and the top surface of the vertical part is provided with a mask layer; performing an ion implantation process to change a material of at least a portion of the inclined portion; an etching process is performed to remove the ion-implanted inclined portion, in which an etching rate of the ion-implanted inclined portion is greater than that of the vertical portion. In the invention, the material of the inclined part subjected to ion implantation is changed by performing the ion implantation process on the inclined part of the fin, so that the material of the inclined part subjected to ion implantation is different from that of the fin which is not subjected to ion implantation, and the inclined part subjected to ion implantation is removed by utilizing the etching selectivity of the inclined part and the fin in the etching process, so that the side wall of the fin is more vertical, and the problem of electric leakage between a grid electrode and a source drain caused by the narrow-top and wide-bottom shape of the fin structure is solved.
Description
Technical Field
The invention relates to the technical field of integrated circuit manufacturing, in particular to a fin structure forming method, a FinFET device and a forming method of the FinFET device.
Background
With the continuous development of semiconductor technology, it is difficult for conventional planar devices to meet the requirements of people for high-performance devices. A Fin-Field-Effect-Transistor (FinFET) is a three-dimensional device that includes a Fin vertically formed on a substrate and a gate structure covering both sides of the Fin, and this design can greatly improve circuit control and reduce leakage current, and can also greatly shorten the gate length of the Transistor.
However, the inventor finds that the existing FinFET device is prone to leakage between the gate and the source and the drain, which affects the performance and reliability of the FinFET device.
Disclosure of Invention
The invention aims to provide a fin structure forming method, a FinFET device and a fin structure forming method, and aims to solve the problem of electric leakage between a grid electrode and a source drain due to the narrow-top and wide-bottom shape of the fin structure.
To solve the above technical problem, the present invention provides a method for forming a fin structure, including: providing a substrate, wherein a fin is arranged on the substrate, the fin is of a structure with a narrow top and a wide bottom, the fin is provided with a vertical part and an inclined part positioned on the side surface of the vertical part, and the top surface of the vertical part is provided with a mask layer; performing an ion implantation process to change a material of at least a portion of the inclined portion; performing an etching process in which an etching rate of the ion-implanted inclined portion is greater than that of the vertical portion to remove the ion-implanted inclined portion.
Optionally, the fin is made of silicon, and the ions implanted by the ion implantation process include germanium ions or arsenic ions, so that the ion-implanted inclined portion is converted into amorphous silicon.
Optionally, an included angle between an implantation direction of the ion implantation process and a horizontal direction of the substrate is 89.9 to 90.1 degrees, implantation energy is 0.2 to 20Kev, and implantation dose is 1 × 1012atom/cm2～5×1016atom/cm2。
Optionally, the fin is made of silicon, the ions implanted by the ion implantation process include oxygen ions, and an annealing process is performed after the ion implantation process is performed, so that the inclined portion implanted by the ions is converted into silicon dioxide.
Optionally, the annealing process is a low-temperature annealing process or a rapid annealing process.
Optionally, an included angle between an implantation direction of the ion implantation process and a horizontal direction of the substrate is 89.9 to 90.1 °, an implantation energy of the ion implantation process is 0.2 to 20Kev, and an implantation dose is 1 × 1012atom/cm2～5×1016atom/cm2。
Optionally, the ion implantation process implants ions in all of the inclined portions, and after the ion implantation process and the etching process are performed, the method for forming the fin structure further includes: and forming an isolation medium layer, wherein the isolation medium layer is filled between the adjacent vertical parts and exposes the vertical parts with preset height, so that the vertical parts protruding out of the isolation medium layer are used as the fin structures.
Optionally, before the ion implantation process is performed, the method for forming the fin structure further includes: forming an isolation medium layer, wherein the isolation medium layer is filled between adjacent fins and exposes the fins with preset height; and the ion implantation process is used for implanting ions in the inclined part protruding out of the isolation medium layer, and the etching process is used for removing the ion-implanted inclined part protruding out of the isolation medium layer so as to use the vertical part protruding out of the isolation medium layer as the fin structure.
Based on another aspect of the present invention, embodiments of the present application further provide a method for forming a FinFET device, where the method for forming a fin structure as described above is used to form a fin structure of a FinFET device.
Based on another aspect of the present invention, the present application further provides a FinFET device formed by the above method for forming a FinFET device.
In summary, the present invention provides a method for etching a fin structure, in which an ion implantation process is performed on an inclined portion of the fin, so as to change a material of the ion implanted inclined portion, thereby making the material of the ion implanted inclined portion different from that of a fin that is not ion implanted, and in the etching process, the ion implanted inclined portion is removed by using an etching selectivity that the material of the ion implanted inclined portion is different from that of the fin that is not ion implanted, so as to make a sidewall of the fin more vertical, thereby improving a top-narrow and bottom-wide profile of the fin structure, and solving a problem of leakage between a gate and a source drain.
Drawings
It will be appreciated by those skilled in the art that the drawings are provided for a better understanding of the invention and do not constitute any limitation to the scope of the invention.
Fig. 1 is a flow chart of a method for forming a fin structure according to an embodiment of the present disclosure;
fig. 2 to fig. 5b are schematic structural diagrams corresponding to respective steps of a method for forming a fin structure according to this embodiment;
fig. 6a to 6d are schematic structural diagrams corresponding to respective steps of another fin structure forming method according to this embodiment.
In the drawings:
10-a substrate; 11-fins; 11 a-a vertical portion; 11 b-an inclined portion; 12-a mask layer; 11 b' -an inclined portion not ion-implanted; 11 c-an amorphized layer; 11 d-reaction layer; 11 e-non-ion implanted layer;
21-isolation dielectric layer.
Detailed Description
To further clarify the objects, advantages and features of the present invention, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings. It is to be noted that the drawings are in greatly simplified form and are not to scale, but are merely intended to facilitate and clarify the explanation of the embodiments of the present invention. Further, the structures illustrated in the drawings are often part of actual structures. In particular, the drawings may have different emphasis points and may sometimes be scaled differently.
As used in this application, the singular forms "a", "an" and "the" include plural referents, the term "or" is generally employed in a sense including "and/or," the terms "a" and "an" are generally employed in a sense including "at least one," the terms "at least two" are generally employed in a sense including "two or more," and the terms "first", "second" and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to the number of technical features indicated. Thus, features defined as "first," "second," and "third" may explicitly or implicitly include one or at least two of the features unless the content clearly dictates otherwise.
Fig. 1 is a flowchart of a method for forming a fin structure according to an embodiment of the present disclosure.
As shown in fig. 1, the method for forming a fin structure provided in this embodiment includes the following steps:
s01: providing a substrate, wherein a fin is arranged on the substrate, the fin is of a structure with a narrow top and a wide bottom, the fin comprises a vertical part and an inclined part positioned on the side surface of the vertical part, and the top surface of the vertical part is provided with a mask layer;
s02: performing an ion implantation process to change a material of at least a portion of the inclined portion;
s03: performing an etching process in which an etching rate of the ion-implanted inclined portion is greater than that of the vertical portion to remove the ion-implanted inclined portion.
The embodiment of the invention provides a method for etching a fin structure, which comprises the steps of performing an ion implantation process on an inclined part of the fin to change the material of the ion implanted inclined part, so that the material of the ion implanted inclined part is different from that of a fin which is not ion implanted, and removing the ion implanted inclined part by utilizing the etching selectivity of the material of the ion implanted inclined part different from that of the fin which is not ion implanted in the etching process so as to enable the side wall of the fin to be more vertical, thereby improving the appearance of the upper narrow part and the lower wide part of the fin structure and solving the problem of electric leakage between a grid electrode and a source drain.
Example one
Fig. 2 to 5b are schematic structural diagrams corresponding to respective steps of a method for forming a fin structure according to the present embodiment, and the method for forming a fin structure will be described in detail with reference to fig. 2 to 5 b.
Referring to fig. 2, step S01 is performed to provide a substrate 10, where the substrate 10 has a fin 11, the top of the fin 11 has a mask layer 12, the fin 11 has a structure with a narrow top and a wide bottom, and the fin 11 has a vertical portion 11a located in the fin 11 and perpendicular to the substrate 10 and an inclined portion 11b located at a side of the vertical portion 11 a.
The substrate 10 may be any suitable base material known to those skilled in the art, and may be at least one of the following materials: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-on-insulator-silicon-germanium (S-SiGeOI), silicon-on-insulator-silicon-germanium (SiGeOI), and germanium-on-insulator (GeOI), among others. The material of the substrate 10 in this embodiment is illustrated by taking silicon as an example.
Specifically, the fins 11 may be formed on the surface of the substrate 10 by using a self-aligned multi-patterning technique, and the number of the fins 11 may be single or at least two. The spacing (gap) between adjacent fins 11 may be set according to the process requirements, and may be uniformly arranged all over or partially. The top wall of the fin 11 has a mask layer 12, and the sidewall of the fin 11 is inclined at an angle, so that the fin 11 has a narrow-top-wide-bottom structure, and the opening of the mask layer 12 exposes the sidewall of the fin 11 and a portion of the surface of the substrate 10. The mask layer 12 is remained after the fin 11 is formed by dry etching, and the mask layer 12 may include, for example, a silicon nitride layer covering the top wall of the fin 11 and a silicon oxide layer covering the silicon nitride layer, preferably, a thin silicon oxide layer may be further disposed between the silicon nitride layer and the top wall of the fin 11 for buffering stress.
The fin 11 has a vertical portion 11a and an inclined portion 11b, the vertical portion 11a is a portion of the fin 11 covered by the mask layer 12 when vertically projected onto the substrate 10, the vertical portion 11a has a rectangular longitudinal cross-sectional shape, the inclined portion 11b is a portion of the fin 11 inclined on both sides (four sides) of the vertical portion 11a, and the inclined portion 11b has a triangular or trapezoidal longitudinal cross-sectional shape.
Next, step S02 is performed, and an ion implantation process is performed to change the material of at least a portion of the inclined portion 11b using the mask layer 12, so as to increase the etching rate of the ion-implanted portion of the inclined portion 11b relative to the non-ion-implanted portion during the etching process.
The implantation direction of the ion implantation process is perpendicular to the horizontal direction of the substrate 10 or as perpendicular as possible (the small angle is inclined to the normal direction of the substrate 10), and the implantation angle (horizontal direction of the substrate) may be, for example, 89.9 ° to 90.1 °. The implanted ions of the ion implantation process may include oxygen (O) ions, germanium (Ge) ions, or arsenic (As) ions, and the specific energy, dosage, and subsequent processing manner of the ion implantation process are matched with the type of the ion implantation.
In one embodiment, as shown in fig. 3a, the implanted ions of the ion implantation process are heavy ions with relatively large molecular mass, such as germanium ions or arsenic ions, so that the ion implanted portion in the inclined portion 11b undergoes lattice damage (amorphization) to become the amorphized layer 11c, so that the amorphized layer 11c is different from the non-ion implanted layer 11e in material, and thus the crystallized layer 11c has a higher etching selectivity relative to the non-ion implanted layer 11e when the fin 11 is etched.
Taking the example that the implanted ions are germanium ions or arsenic ions and the material of the fin is silicon (crystalline silicon), the inclined portion 11b (amorphized layer 11c) of the ion implantation is converted into amorphous silicon, the implantation energy of the ion implantation process can be 0.2Kev to 20Kev, and the implantation dose of the ion implantation process can be 1 × 1012atom/cm2～5×1016atom/cm2To increase the degree of amorphization of the inclined portion 11b and at the same time reduce the risk of heavy ions diffusing into the vertical portion 11 a.
In another embodiment, as shown in fig. 3b, the implanted ions of the ion implantation process are ions that can react with the fin phase, such as oxygen ions, so that the inclined portion 11b and the implanted ions form a reaction layer 11d that is different from the non-ion implanted layer 11e in material, so that the reaction layer 11d has an etching selectivity with respect to the non-ion implanted layer 11e when the fin 11 is etched.
Specifically, taking the example where the implanted ions are oxygen ions and the material of the fin is silicon (crystalline silicon), the inclined portion 11b (reaction layer 11d) of the ion implantation is changedThe energy of ion implantation is 0.2 Kev-20 Kev, and the dose of ion implantation is 1 × 1012atom/cm2～5×1016atom/cm2To prevent oxygen ions from diffusing to the vertical portion 11 a. Furthermore, after ion-implanting oxygen ions into the inclined portion 11b to form the reaction layer 11d, an annealing process (heat treatment process) may be performed on the inclined portion 11b to sufficiently react the implanted oxygen ions with silicon of the inclined portion 11b to form the reaction layer 11d, which is advantageous for improving the etching selectivity of the reaction layer 11d with respect to the non-ion-implanted layer 11e when the fin 11 is etched. Preferably, a low temperature annealing process or a rapid annealing process may be employed to reduce or prevent oxygen ions from diffusing into the vertical portion 11a to reduce the influence on the line width of the fin 11. Wherein, the temperature of the low-temperature annealing is, for example, 200 ℃ to 300 ℃, the annealing time can be 30 minutes to 180 minutes, and the rapid annealing process can be laser scanning annealing or flash lamp annealing.
Preferably, the inclined portion 11b is entirely ion-implanted to form the crystallization layer 11c or the reaction layer 11d, but in practice, limited by the ion implantation process, the non-ion-implanted layer 11e may include a vertical portion 11a and an inclined portion 11 b' that is not ion-implanted. It should be understood that in fig. 3a and 3b, since ions are implanted downward, the exposed area of the inclined portion 11b is larger (wider) closer to the bottom of the fin 11, and the degree of ion implantation (thickness along the sidewall of the fin 11) is larger, that is, the inclined portion 11b of ion implantation has a narrow-top-wide-bottom structure, so that the angle between the sidewall of the non-ion-implanted layer 11e and the substrate is formed more perpendicular to the angle between the fin 11 and the substrate. In practice, of course, the surface of the substrate 10 exposed between the fins 11 will also be implanted with heavy ions, but will not affect the performance of the device, and is not shown in the figure.
Next, step S03 is performed to perform an etching process to remove the ion-implanted inclined portion 11b using the mask layer 12, and form a fin structure, wherein an etching rate of the ion-implanted inclined portion 11b in the etching process is greater than that of the vertical portion 11 a.
The method of forming a fin structure may include: as shown in fig. 4, using the mask layer 12 as a mask, an etching process is performed on the fin 11 to remove a portion of the inclined portion 11b, so as to form a fin 11 with a relatively vertical sidewall (improved profile); as shown in fig. 5a, forming an isolation dielectric layer 21, wherein the isolation dielectric layer 21 fills the space between the fins 11 and covers the fins 11; as shown in fig. 5b, the isolation dielectric layer 21 is etched to a predetermined depth, so that the fins 11 exposed to the isolation dielectric layer 21 are used as fin structures.
The ion-implanted inclined part 11 can be removed by selecting an etching method matched with the material of the ion-implanted inclined part 11, and the difference between the material of the ion-implanted inclined part 11 and the material of the non-ion-implanted layer 11e is utilized to enable the two to have larger etching selectivity during etching. If the inclined portion 11 of the ion implantation is the amorphized layer 11c and the amorphized layer 11c is amorphous silicon, the amorphized layer 11c may be removed by dry etching, and the fin 11 with a vertical sidewall may be formed; if the inclined portion 11 of the ion implantation is the reaction layer 11d and the reaction layer 11d is a silicon dioxide layer, the reaction layer 11d can be removed by wet etching, and the fin 11 with a vertical sidewall is formed.
It should be noted that if the verticality of the sidewall of the fin 11 after one ion implantation process and one etching process is not as expected, for example, the angle between the sidewall of the fin 11 and the horizontal direction of the substrate is less than 89.5 ° or greater than 90.5 °, at least one of the above ion implantation processes and the above etching processes may be performed to further improve the appearance of the fin 11.
In fig. 5a and 5b, the isolation dielectric layer 21 may be made of, for example, silicon oxide, and is formed by FCVD process to improve step coverage and filling effect; when etching away part of the isolation dielectric layer 21, the mask layer 12 on the top wall of the fin 11 is also removed.
Example two
Fig. 6a to 6d are schematic structural diagrams corresponding to respective steps of another fin structure forming method according to this embodiment.
As shown in fig. 6a, the substrate 10 has a fin 11 thereon, the top of the fin 11 has a mask layer 12, the fin 11 has a structure with a narrow top and a wide bottom, and the fin 11 has a vertical portion 11a located inside the fin 11 and perpendicular to the substrate 10 and an inclined portion 11b located at a side of the vertical portion 11 a.
As shown in fig. 6b, an isolation dielectric layer 21 is formed, the isolation dielectric layer 21 covers the surface of the substrate 10 and partially fills (has a certain thickness) the space between the fins 11, and the fins 11 partially protrude from the isolation dielectric layer 21.
As shown in fig. 6c and 6d, ion implantation and etching processes are performed on the fins 11 protruding (exposed) from the isolation dielectric layer 21 to improve the profile (the verticality of the sidewalls) of the fins 11, and the fins 11 protruding from the isolation dielectric layer 21 are used as fin structures, wherein the ion implantation process and the etching process are the same as those in the foregoing method, and are not repeated herein.
In the present embodiment, the fin 11 (the bottom of the fin 11) embedded in the isolation dielectric layer 21 is completely retained, and the thickness of the fin 11 is kept wider, so that the entire fin 11 has better bottom support, and thus the fin structure on the upper portion of the fin 11 has better mechanical strength, which is beneficial to resisting the stress of other materials in the subsequent process.
The embodiment of the application also provides a method for forming the FinFET device, and the method for forming the FinFET device adopts the method for forming the fin structure.
The embodiment of the present application further provides a FinFET device, which includes a fin structure and a gate structure formed on the fin structure, and the fin structure of the FinFET device is formed by using the above fin structure forming method.
In summary, the present invention provides a method for etching a fin structure, in which an ion implantation process is performed on an inclined portion of the fin, so as to change a material of the ion implanted inclined portion, thereby making the material of the ion implanted inclined portion different from that of a fin that is not ion implanted, and in the etching process, the ion implanted inclined portion is removed by using an etching selectivity that the material of the ion implanted inclined portion is different from that of the fin that is not ion implanted, so as to make a sidewall of the fin more vertical, thereby improving a top-narrow and bottom-wide profile of the fin structure, and solving a problem of leakage between a gate and a source drain.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A method for forming a fin structure, comprising:
providing a substrate, wherein a fin is arranged on the substrate, the fin is of a structure with a narrow top and a wide bottom, the fin is provided with a vertical part and an inclined part positioned on the side surface of the vertical part, and the top surface of the vertical part is provided with a mask layer;
performing an ion implantation process to change a material of at least a portion of the inclined portion;
performing an etching process in which an etching rate of the ion-implanted inclined portion is greater than that of the vertical portion to remove the ion-implanted inclined portion.
2. The method of claim 1, wherein the fin comprises silicon, and the ion implantation process implants ions comprising germanium ions or arsenic ions to convert the implanted sloped portion into amorphous silicon.
3. The method of claim 2, wherein the angle between the implantation direction of the ion implantation process and the horizontal direction of the substrate is 89.9-90.1 °, the implantation energy is 0.2-20 Kev, and the implantation dose is 1 x 1012atom/cm2～5×1016atom/cm2。
4. The method of claim 1, wherein the fin comprises silicon, the ion implantation process implants ions including oxygen ions, and the ion implantation process is followed by an annealing process to convert the implanted tilt portion into silicon dioxide.
5. The method of claim 4, wherein the annealing process comprises a low temperature annealing process or a rapid annealing process.
6. The method for forming a fin structure of claim 4, wherein an included angle between an implantation direction of the ion implantation process and a horizontal direction of the substrate is 89.9-90.1 °, an implantation energy of the ion implantation process is 0.2-20 Kev, and an implantation dose is 1 x 1012atom/cm2～5×1016atom/cm2。
7. The method of any of claims 1-6, wherein after the performing the ion implantation process and the etching process, the method further comprises:
and forming an isolation medium layer, wherein the isolation medium layer is filled between the adjacent vertical parts and exposes the vertical parts with preset height, so that the vertical parts protruding out of the isolation medium layer are used as the fin structures.
8. The method of forming a fin structure of any of claims 1 to 6, wherein before performing the ion implantation process, the method of forming a fin structure further comprises:
forming an isolation medium layer, wherein the isolation medium layer is filled between adjacent fins and exposes the fins with preset height;
and the ion implantation process is used for implanting ions in the inclined part protruding out of the isolation medium layer, and the etching process is used for removing the ion-implanted inclined part protruding out of the isolation medium layer so as to use the vertical part protruding out of the isolation medium layer as the fin structure.
9. A method of forming a FinFET device, comprising:
the fin structure forming method of any one of claims 1 to 8 is adopted to form a fin structure of a FinFET device.
10. A FinFET device formed using the method of forming a FinFET device of claim 9.
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| CN202111681692.7A CN114334634A (en) | 2021-12-29 | 2021-12-29 | Fin structure forming method, FinFET device and fin structure forming method |
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| CN202111681692.7A CN114334634A (en) | 2021-12-29 | 2021-12-29 | Fin structure forming method, FinFET device and fin structure forming method |
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