CN114326163A - Terahertz wave modulator and method - Google Patents
Terahertz wave modulator and method Download PDFInfo
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- CN114326163A CN114326163A CN202210023366.5A CN202210023366A CN114326163A CN 114326163 A CN114326163 A CN 114326163A CN 202210023366 A CN202210023366 A CN 202210023366A CN 114326163 A CN114326163 A CN 114326163A
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Abstract
The application provides a terahertz wave modulator and a method, and belongs to the technical field of optics. The terahertz modulator comprises a nanostructure layer and a two-dimensional material layer; wherein the nanostructure layer is arranged on one side of the two-dimensional material layer; the nanostructure layer and the two-dimensional material layer are stacked to form a heterojunction; the nanostructure layer comprises a plurality of periodically arranged nanostructures; the two-dimensional material layer includes at least one layer of a two-dimensional material having a non-linear electrical conductivity. The terahertz modulator provided by the embodiment of the application enhances the high-order nonlinear effect of incident terahertz waves for many times, and enhances the modulation depth of the terahertz waves, so that nonlinear modulation of the terahertz waves is realized.
Description
Technical Field
The application relates to the technical field of optics, in particular to a terahertz wave modulator and a method.
Background
The terahertz technology is evaluated as 'ten technologies changing the future world', the terahertz wave is between a microwave band and an infrared band, and the crossing of multiple disciplines such as optoelectronics, semi-conductor science, material science and the like is combined, so that the terahertz technology is a field which is developed and researched by people to the utmost extent at present.
In the related art, the on-off of the artificial unit opening of the metamaterial is regulated and controlled by changing the grid voltage of the semiconductor heterojunction field effect transistor so as to realize the modulation of the terahertz wave.
In the course of implementing the present application, the inventors found that there are at least the following problems in the related art:
the terahertz wave modulator based on semiconductor (such as gallium nitride) materials in the prior art is limited by the energy band structure of the semiconductor, so that the nonlinear modulation of terahertz waves cannot be realized.
Disclosure of Invention
In order to solve the technical problem that a terahertz wave modulator based on a semiconductor material cannot realize nonlinear modulation in the related art, the embodiment of the application provides a terahertz wave modulator and a method.
In a first aspect, an embodiment of the present application provides a terahertz wave modulator, including a nanostructure layer and a two-dimensional material layer;
wherein the nanostructure layer is arranged on one side of the two-dimensional material layer;
the nanostructure layer and the two-dimensional material layer are stacked to form a heterojunction;
the nanostructure layer comprises a plurality of periodically arranged nanostructures;
the two-dimensional material layer includes at least one layer of a two-dimensional material having a non-linear electrical conductivity.
Optionally, the shape of the nanostructure comprises a centrosymmetric pattern or an axisymmetric pattern.
Optionally, the shape of the nanostructure comprises one or more of a rectangle, a circle, a ring, or a cross.
Optionally, the period of the nanostructure is greater than or equal to 100nm and less than or equal to 500 nm.
Optionally, the height of the nanostructures is greater than or equal to 5nm and less than or equal to 30 nm.
Optionally, the nanostructure comprises an all-dielectric nanoantenna or a plasmonic nanoantenna.
Optionally, the nanostructured material comprises an all-dielectric material or a noble metal.
Optionally, the material of the two-dimensional material layer includes one or more of graphene, black phosphorus, and a transition metal chalcogenide.
Optionally, the two-dimensional material layer comprises a heterojunction formed by a stack of a plurality of different two-dimensional materials.
Optionally, the two-dimensional material layer comprises a single layer of graphene.
Optionally, the nanostructure layer includes a plurality of silicon nano-antennas arranged periodically.
In a second aspect, an embodiment of the present application further provides a terahertz wave modulation method, which is applicable to the terahertz modulator provided in any of the above embodiments, and the method at least includes:
the incident terahertz waves are enabled to generate stronger nonlinear effect through the two-dimensional material layer;
the high-order nonlinear effect of incident terahertz waves is further enhanced by the nanostructure layer.
Optionally, the further enhancing, by the nanostructure layer, the higher order nonlinear effect of the incident terahertz wave comprises:
regulating the surface area of the nanostructures in the nanostructure layer; and/or the presence of a gas in the gas,
modulating the period and/or height of the nanostructure.
The terahertz wave modulator and the method provided by the embodiment of the application have the following beneficial effects:
according to the terahertz wave modulator and the terahertz wave modulating method, the two-dimensional material with the nonlinear conductivity and the nanostructure layer are stacked to form the heterojunction. The incident terahertz waves are enabled to generate an enhanced nonlinear effect through the two-dimensional material layer, and the high-order nonlinear effect of the incident terahertz waves is further enhanced through the plasmon effect of the plurality of periodically arranged nanostructures in the nanostructure layer, so that the nonlinear regulation and control of the incident terahertz waves are realized.
According to the terahertz wave modulation method provided by the embodiment of the application, the high-order nonlinear effect is generated through the two-dimensional material layer, and the high-order nonlinear effect of the terahertz wave is further enhanced through the plasmon effect of the nano-structure layer, so that the nonlinear modulation of the terahertz wave is realized.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the background art of the present application, the drawings required to be used in the embodiments or the background art of the present application will be described below.
Fig. 1 shows a schematic diagram of a terahertz wave modulator provided by an embodiment of the present application;
fig. 2 shows a schematic diagram of yet another alternative structure of a terahertz wave modulator provided by an embodiment of the present application;
FIG. 3 illustrates an alternative structural schematic of a nanostructure provided by embodiments of the present application;
FIG. 4 illustrates a schematic diagram of yet another alternative structure of a nanostructure provided by an embodiment of the present application;
FIG. 5 illustrates a schematic diagram of yet another alternative structure for nanostructures provided by embodiments of the present application;
fig. 6 shows a schematic diagram of yet another alternative structure of the nanostructure provided by the embodiments of the present application.
The reference numerals in the drawings denote:
100-a nanostructure layer; 101-a nanostructure; 200-a two-dimensional layer of material; 300-semiconductor substrate.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element and be integral therewith, or intervening elements may also be present. The terms "mounted," "one end," "the other end," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The terahertz wave modulator based on the semiconductor material can not realize nonlinear modulation, and has poor transportation property due to large effective mass of a current carrier of the semiconductor material. Two-dimensional materials are becoming an ideal system for studying condensed physics due to their simple structure, abundant physical properties, convenient regulation and diverse combinations. Under the condition of a two-dimensional extreme limit domain, nonlinear light and substances have stronger interaction, so that the method provides a field for the development of the terahertz control method in the field of terahertz control. A structure for improving terahertz modulation performance by adopting graphene to replace a metal gate and even a two-dimensional electron gas semiconductor layer is provided. The structure can greatly reduce the signal loss of the metal grid electrode on one hand, and on the other hand, the conductivity change caused by semiconductor heterojunction two-dimensional electron gas in the original structure can be ignored due to the large conductivity change of the graphene, the thickness limitation of the graphene is realized by one hand, and the effective nonlinear optical effect can be generated only by high input power.
The embodiment of the present application provides a terahertz wave modulator, as shown in fig. 1 to 6, including a nanostructure layer 100 and a two-dimensional material layer 200. Wherein, the nanostructure layer 100 is disposed on one side of the two-dimensional material layer 200, and the nanostructure layer 100 and the two-dimensional material layer 200 are stacked to form a heterojunction. It is to be understood that the nanostructure layer 100 may be on either side of the two-dimensional material layer 200, so long as both form a heterojunction.
The nanostructure layer 100 includes a plurality of periodically arranged nanostructures 101. The two-dimensional material layer 200 includes at least one layer of a two-dimensional material having a non-linear electrical conductivity.
A two-dimensional material is a material consisting of a single or a few layers of atoms or molecules, which are linked by stronger covalent or ionic bonds within the layers and are bonded by weaker van der waals forces between the layers. Two-dimensional materials have properties that are distinct from their corresponding three-dimensional structures, and in particular exhibit odd optical and electrical properties. The two-dimensional material layer 200 in the embodiment of the present application includes at least one layer of a two-dimensional material having a non-linear electrical conductivity, such as one or more of graphene, Black Phosphorus (BP), and Transition Metal chalcogenides (TMDs). Illustratively, the two-dimensional material layer 200 may also include heterojunctions formed by a stack of a plurality of different two-dimensional materials. According to the embodiment of the application, the incident electromagnetic wave is strongly interacted with the two-dimensional material layer 200 in a nonlinear manner, so that an effective nonlinear optical effect is generated under lower input power, and nonlinear regulation and control of the incident terahertz wave are realized. The preparation method of the two-dimensional material comprises a chemical vapor deposition method (CVD), an oxidation-reduction intercalation stripping method, a hydrothermal template assembly method, an ultrasonic stripping method and the like.
The nanostructure layer 100 is a sub-wavelength artificial nanostructure film in which a plurality of periodically arranged nanostructures 101 can modulate incident radiation. The plurality of periodically arranged nanostructures 101 include all-dielectric or plasma nanoantennas, which can directly regulate and control the phase, amplitude, polarization and other characteristics of incident radiation. Optionally, the nanostructures 101 provided in the embodiments of the present application include noble metal nanostructures. That is, the material of the nano-structure 101 is a noble metal.
In alternative embodiments of the present application, as shown in fig. 3 to 6, the shape of the nanostructure 101 may be a centrosymmetric pattern or an axisymmetric pattern. The nanostructure layer 100 may modulate the phase, amplitude, and polarization properties of light through the nanostructures 101. More preferably, as shown in fig. 2-5, the shape of the nanostructures 101 includes one or more of a rectangle, a circle, a ring, or a cross. It should be noted that the shape of the nanostructures 101 in the embodiment of the present application has much larger influence on the optical performance of the nanostructure layer 100 than the arrangement of the nanostructures 101.
Specifically, in the embodiment of the present application, the nanostructure layer 100 and the two-dimensional material layer 200 form a heterojunction, and when a terahertz wave is incident to the heterojunction formed by the nanostructure layer 100 and the two-dimensional material layer 200, the frequency is changed. In order to clearly describe the nonlinear effect of electromagnetic waves, the relationship between the electric polarization strength P (t) and the applied electric field strength E (t) of the material system needs to be considered.
For the conventional linear effect, the electric polarization intensity of the electromagnetic wave is in a linear relation with the electric field intensity, as shown in formula (1):
P(t)＝ε0x(1)E(t) (1)。
wherein x is(1)Linear electromagnetic wave polarizability. In connection with the above basic assumptions, the system of macroscopic maxwell equations describing the propagation and interaction of electromagnetic waves in a medium is also a set of linear differential equations, i.e., the equations contain only the first-order terms of the applied electric field strength e (t). Sequentially, assuming that electromagnetic waves with a single frequency are incident into a non-absorption medium, the frequency of the electromagnetic waves is not changed; the electromagnetic waves with different frequencies are simultaneously incident, and mutual coupling action is not generated between the electromagnetic waves, and the electromagnetic waves with new frequencies are not generated.
For nonlinear electromagnetic wave action, the electric polarization strength of the material system can be expanded in series as shown in formula (2):
P(t)＝ε0[x(1)+x(2)+x(3)+...+x(n)] (2)。
in the formula (2), x(2)And x(3)Second and third order non-linear electromagnetic wave polarizabilities, respectively. Generally, the polarizabilities of electromagnetic waves are expressed in the form of tensors. The formula (2) is substituted into Maxwell equation system to obtain a nonlinear electromagnetic wave equation system containing high-order terms of applied electric field intensity E (t), which can explain the frequency doubling effect generated when a single-frequency electromagnetic wave is incident into a specific medium, and multiple electromagnetic waves with different frequencies are simultaneously incident into the medium to be coupled and are generated at a new frequency combinationCoherent mixing emission and the like. Most of the nonlinear electromagnetic wave phenomena are caused by second-order and third-order nonlinear polarizabilities. The nonlinear effect is limited by the symmetry of the material, and the second-order nonlinear effect can be generated only when the non-centrosymmetric material is in galvanic couple approximation under the interaction of electromagnetic waves and substances. Thus, the two-dimensional material layer 200 in the embodiments of the present application is capable of producing stronger second and third order nonlinear effects.
When the two-dimensional material layer 200 and the nanostructure layer 100 are combined in the embodiment of the present application, a strong electromagnetic field is generated near the nanostructure layer 100 due to the plasmon effect generated by the nanostructure layer 100 under the irradiation of the incident electromagnetic wave. The movement of electrons in a strong electromagnetic field can cause the generation of nonlinear electromagnetic wave effect when the movement is non-harmonic movement.
The nanostructure layer 100 in the embodiment of the present application mainly enhances the electromagnetic wave nonlinear effect in two ways. One is that the metal-dielectric structure formed by the nanostructures 101 and the electromagnetic wave medium surrounding the nanostructures 101 enhances the surface electric field due to the generation of surface plasmons or local plasmons. This effect of enhancing the nonlinearity of an electromagnetic wave can be described by a frequency-dependent local field enhancement factor, as shown in equation (3):
L(ω，r)＝|E|oc(ω，r)/E0(ω)| (3)。
in the formula (3), r is a position vector, E|oc(ω, r) and E0(ω) local field intensity and incident electric field intensity of the surface plasmon with frequency ω, respectively. By designing specific nanostructures 101 and/or designing the periodic arrangement of specific nanostructures 101, electromagnetic waves are coupled into the nanometer dimensions, thereby creating a very large field enhancement factor, and the enhancement of the field electric field can greatly enhance the nonlinear process. The generation of surface plasmons, which cause an enhancement of the metal-dielectric surface electric field, can enhance many nonlinear processes. The intensity of the frequency doubling signal and the frequency doubling radiation electric dipole moment p generated inside the nano-structure 101(2)The intensity is related and can be expressed as formula (4).
In the formula (4), L (2 ω, r) is the enhancement factor of the second-order electromagnetic wave,
is second order nonlinear polarizability of electromagnetic wave, E|oc(ω, r) is the local field strength of the surface plasmon at frequency ω. Since the frequency doubling nonlinearity is mainly due to the contribution of the nanostructure 101, the integral is a calculation of the surface active area of the nanostructure 101. In addition to second harmonics, the nanostructures 101 may also enhance third and higher order nonlinear processes, such as third harmonic, four wave mixing, and higher harmonics. For the calculation of the enhancement effect of the n-order nonlinear process, the n-order nonlinear electric dipole moment can be expressed as shown in formula (5):
in the formula (5), L (n ω, r) is the enhancement factor of the electromagnetic wave of order n,
is second order nonlinear polarizability of electromagnetic wave, E|oc(ω, r) is the local field strength of the surface plasmon at frequency ω.
Another way for the nanostructure layer 100 to enhance the nonlinear effect of electromagnetic waves in the embodiment of the present application is to adjust and control parameters of plasmons. For example, the resonant frequency of the localized plasmon or nanostructure 101 is very sensitive to external excitation of metal and medium near the interface, and very weak external excitation energy can cause a great change in plasmon resonance, which in turn causes a great change in the refractive index of the heterojunction formed by the nanostructure layer 100 and the two-dimensional material layer 200. Therefore, the parameter of the plasmon can be regulated and controlled in a nonlinear way. Therefore, the nonlinear regulation of the electromagnetic wave can be achieved by regulating the size of the nanostructure 101. Illustratively, the period of the nanostructure 101 provided by the embodiment of the present application is greater than or equal to 100nm and less than or equal to 500 nm. Optionally, the height of the nanostructures 101 is greater than or equal to 5nm and less than or equal to 30 nm. The period of the nanostructures 101 refers to the distance between the centers of adjacent nanostructures 101.
The improvement of the modulation of the electromagnetic wave signal by applying the plasmon effect of the nano-structure 101 is mainly realized by enhancing the third-order nonlinear effect of metal or adjacent media, and the two ways of enhancing the nonlinear effect of the plasmon can improve the modulation depth of the electromagnetic wave signal. The two modes are that the nonlinear enhancement caused by the fact that the surface plasmon is very sensitive to the cross-sectional properties of the metal-medium is mainly contributed by the movement of the surface plasmon resonance peak caused by external excitation. For electromagnetic wave excitation of a specific energy density, the shift amount of a formant in a spectrogram is certain, and the higher the modulation depth of a resonant electromagnetic wave signal is, the higher the quality factor is (the narrower the line width is, the sharper the peak is), which corresponds to a larger nonlinear effect.
In summary, the presence of the nanostructure layer 100 enhances the nonlinear effect of the incident electromagnetic wave, and when the incident terahertz wave has a very low energy density, a very large modulation depth can be achieved.
From the above, the heterojunction formed by the two-dimensional material layer 200 and the nanostructure layer 100 stacked forms a high-order nonlinear medium. When incident terahertz waves are emitted into the terahertz modulator, stronger second-order and third-order nonlinear effects are generated under the stronger nonlinear optical effect of the two-dimensional material layer 200; and second-order and third-order nonlinear effects on incident terahertz waves are further enhanced through the enhancement of the plasmon effect of the nanostructure layer 100.
Illustratively, in the terahertz wave modulator provided by the embodiment of the present application, as shown in fig. 2, a single-layer graphene is used as the two-dimensional material layer 200, and the nanostructure layer 100 includes a plurality of silicon nano-stripe structures arranged periodically. Wherein, the period of the silicon nanometer stripe structure is 100nm, the width is 50nm, and the height is 20 nm. The terahertz wave modulator is arranged on a semiconductor substrate 300 and used for a second harmonic effect, namely, after terahertz waves with a certain frequency w are incident to a second-order nonlinear medium formed by single-layer graphene and a silicon nano-strip array, a new coherent radiation phenomenon is generated at a frequency of 2w, and the terahertz waves with the frequency of 2w are output. Illustratively, the material of the semiconductor substrate 300 is silicon. Under the same condition, the modulation depth of the terahertz modulator provided by the embodiment of the application is improved by 50% compared with that of a single-layer graphene two-dimensional material without the nanostructure layer 100.
In summary, the terahertz wave modulator provided by the embodiment of the application enables incident terahertz waves to generate a nonlinear effect through the two-dimensional material layer, and further enhances the second-order and third-order nonlinear effects of the terahertz waves through the nanostructure layer, so that the modulation depth of the incident terahertz waves is improved. Therefore, the terahertz wave modulator and the method provided by the embodiment of the application can realize a large modulation depth when the incident terahertz wave has a low energy density.
On the other hand, an embodiment of the present application further provides a terahertz wave modulation method, which is applicable to the terahertz wave modulator provided in any of the above embodiments, and the method at least includes:
the incident terahertz waves are made to generate stronger nonlinear effects, such as second-order nonlinear effects and third-order nonlinear effects, by the two-dimensional material layer 200.
The higher order nonlinear effect of the incident terahertz wave is further enhanced by the nanostructure layer 100.
Specifically, the high-order nonlinear effect of the incident terahertz wave is further enhanced by the nanostructure layer 100, including the regulation of the surface area of the nanostructure 101 in the nanostructure layer 100; and/or to modulate the period and/or height of the nanostructures 101.
According to the terahertz wave modulation method provided by the embodiment of the application, the single-layer graphene is used as the two-dimensional material layer 200, and the nanostructure layer 100 comprises a plurality of silicon nanometer stripe structures which are periodically arranged. Wherein, the period of the silicon nanometer stripe structure is 100nm, the width is 50nm, and the height is 20 nm. The terahertz wave modulator is arranged on a silicon substrate and used for a second harmonic effect, namely, after terahertz waves with certain frequency w are incident to a second-order nonlinear medium formed by single-layer graphene and a silicon nano-strip array, a new coherent radiation phenomenon is generated at the frequency of 2w, and the terahertz waves with the frequency of 2w are output. Under the same condition, the modulation depth of the terahertz wave modulation method provided by the embodiment of the application to the terahertz wave is 50% higher than that of the terahertz wave modulation method adopting the single-layer graphene two-dimensional material.
In summary, according to the terahertz wave modulator and the method provided by the embodiment of the application, the two-dimensional material with nonlinear conductivity and the nanostructure layer are stacked to form the heterojunction. The incident terahertz waves are enabled to generate an enhanced nonlinear effect through the two-dimensional material layer, and the high-order nonlinear effect of the incident terahertz waves is further enhanced through the plasmon effect of the plurality of periodically arranged nanostructures in the nanostructure layer, so that the nonlinear regulation and control of the incident terahertz waves are realized.
According to the terahertz wave modulation method provided by the embodiment of the application, the high-order nonlinear effect is generated through the two-dimensional material layer, and the high-order nonlinear effect of the terahertz wave is further enhanced through the plasmon effect of the nano-structure layer, so that the nonlinear modulation of the terahertz wave is realized.
The above description is only a specific implementation of the embodiments of the present application, but the scope of the embodiments of the present application is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the embodiments disclosed in the present application, and all the changes or substitutions should be covered by the scope of the embodiments of the present application. Therefore, the protection scope of the embodiments of the present application shall be subject to the protection scope of the claims.
Claims (13)
1. A terahertz-wave modulator, characterized in that the terahertz modulator comprises a nanostructure layer (100) and a two-dimensional material layer (200);
wherein the nanostructure layer (100) is arranged on one side of the two-dimensional material layer (200);
the nanostructure layer (100) and the two-dimensional material layer (200) are stacked to form a heterojunction;
the nanostructure layer (100) comprises a plurality of periodically arranged nanostructures (101);
the two-dimensional material layer (200) comprises at least one layer of a two-dimensional material having a non-linear electrical conductivity.
2. The terahertz-wave modulator of claim 1, wherein the shape of the nanostructure (101) comprises a centrosymmetric pattern or an axisymmetric pattern.
3. The terahertz wave modulator of claim 2, wherein the shape of the nanostructures (101) comprises one or more of a rectangle, a circle, a ring, or a cross.
4. The terahertz-wave modulator of any one of claims 1 to 3, wherein the nanostructure (101) has a period greater than or equal to 100nm and less than or equal to 500 nm.
5. The terahertz-wave modulator of any one of claims 1 to 3, wherein the height of the nanostructures (101) is greater than or equal to 5nm and less than or equal to 30 nm.
6. The terahertz wave modulator of any one of claims 1 to 3, wherein the nanostructure (101) comprises an all-dielectric nanoantenna or a plasmonic nanoantenna.
7. The terahertz-wave modulator of any one of claims 1 to 3, wherein the material of the nanostructures (101) comprises an all-dielectric material or a noble metal.
8. The terahertz wave modulator according to claim 1, wherein a material of the two-dimensional material layer (200) includes one or more of graphene, black phosphorus, and a transition metal chalcogenide.
9. The terahertz-wave modulator of claim 1, wherein the two-dimensional material layer (200) includes a heterojunction formed by a plurality of different two-dimensional material stacks.
10. The terahertz-wave modulator of claim 1, wherein the two-dimensional layer of material (200) comprises a single layer of graphene.
11. The terahertz wave modulator of claim 1, wherein the nanostructure layer (100) comprises a plurality of periodically arranged silicon nanoantennas.
12. A terahertz wave modulation method applied to the terahertz modulator according to any one of claims 1 to 11, the method comprising at least:
enabling incident terahertz waves to generate stronger nonlinear effects through the two-dimensional material layer (200);
the higher order nonlinear effects of incident terahertz waves are further enhanced by the nanostructure layer (100).
13. The terahertz wave modulation method of claim 12, wherein the further enhancing of the higher-order nonlinear effect of the incident terahertz wave by the nanostructure layer (100) comprises:
modulating the surface area of the nanostructures (101) in the nanostructure layer (100); and/or the presence of a gas in the gas,
modulating the period and/or height of the nanostructures (101).
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US11927769B2 (en) | 2022-03-31 | 2024-03-12 | Metalenz, Inc. | Polarization sorting metasurface microlens array device |
| US11978752B2 (en) | 2019-07-26 | 2024-05-07 | Metalenz, Inc. | Aperture-metasurface and hybrid refractive-metasurface imaging systems |
| US11988844B2 (en) | 2017-08-31 | 2024-05-21 | Metalenz, Inc. | Transmissive metasurface lens integration |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11988844B2 (en) | 2017-08-31 | 2024-05-21 | Metalenz, Inc. | Transmissive metasurface lens integration |
| US11978752B2 (en) | 2019-07-26 | 2024-05-07 | Metalenz, Inc. | Aperture-metasurface and hybrid refractive-metasurface imaging systems |
| US11927769B2 (en) | 2022-03-31 | 2024-03-12 | Metalenz, Inc. | Polarization sorting metasurface microlens array device |
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