CN114315345A - High-temperature piezoelectric energy collection ceramic material with wide-temperature stable transduction coefficient and preparation method thereof - Google Patents

High-temperature piezoelectric energy collection ceramic material with wide-temperature stable transduction coefficient and preparation method thereof Download PDF

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CN114315345A
CN114315345A CN202210028251.5A CN202210028251A CN114315345A CN 114315345 A CN114315345 A CN 114315345A CN 202210028251 A CN202210028251 A CN 202210028251A CN 114315345 A CN114315345 A CN 114315345A
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侯育冬
于肖乐
郑木鹏
朱满康
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Beijing University of Technology
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Abstract

A high-temperature piezoelectric energy collection ceramic material with wide-temperature stable transduction coefficient and a preparation method thereof belong to the field of piezoelectric ceramic materials. The chemical composition of the matrix of the ceramic material is zBiScO3‑yBi(Zn2/3Ta1/3)O3‑xPbTiO3(x is more than or equal to 0.605 and less than or equal to 0.64, y is more than or equal to 0.005 and less than or equal to 0.03, and z is 1-x-y). The preparation method is characterized by adopting a high-temperature solid phase method, firstly weighing corresponding raw materials according to a stoichiometric ratio, and then sequentially carrying out wet grinding, drying, calcining, granulating, compression molding and sintering. The high-temperature piezoelectric ceramic material provided by the invention has high and thermally stable transduction coefficients in a wide temperature region, is favorable for enhancing the working stability of a high-temperature piezoelectric energy collecting device,has obvious social significance and application value.

Description

High-temperature piezoelectric energy collection ceramic material with wide-temperature stable transduction coefficient and preparation method thereof
Technical Field
The invention belongs to the field of piezoelectric ceramic materials, and particularly relates to a piezoelectric ceramic material with high and temperature-stable transduction coefficient for high-temperature piezoelectric energy collection in a wide temperature range and a preparation method thereof.
Background
The development of advanced fields such as aerospace, nuclear energy conversion, unmanned driving and the like remarkably promotes the progress of human beings. Meanwhile, a large number of wireless sensors are put into the fields to perform structural health monitoring, data acquisition and transmission and the like, so that the running state of equipment is fed back in real time, and the safety of the equipment is ensured. The micro-sensor in these fields operates at temperatures not less than 200 ℃ and even up to 300 ℃, which presents a great challenge to the way of supplying electric energy. The existing power supply mode mainly uses a battery, but the power supply requirement is difficult to meet due to inherent defects of limited service life, no high temperature resistance and the like. The piezoelectric energy collector can capture waste vibration energy widely existing in the environment to realize clean power generation based on the positive piezoelectric effect of piezoelectric ceramics, and is a very promising electromechanical conversion device for long-term power supply of the wireless sensor.
At present, Pb (Zr, Ti) O is dominant in the piezoelectric market3The perovskite-based piezoelectric material has high piezoelectric activity, but the Curie temperature is not more than 386 ℃, the safe use temperature is limited to 200 ℃, the piezoelectric property is seriously deteriorated due to depolarization caused by overhigh temperature, and the application of the perovskite-based piezoelectric material in the high-temperature field is seriously limited. And BiScO of perovskite structure3-PbTiO3The material has high Curie temperature and high piezoelectric activity, so that the material becomes a main research system in the field of high-temperature piezoelectricity.
For a high-temperature piezoelectric energy collecting material with high electromechanical conversion capability, the material not only has a high Curie temperature, but also has a high energy density (u). The energy density (u) is expressed as:
Figure BDA0003465264530000011
wherein d and g are the transduction coefficient of the piezoelectric ceramic, A is the stress area of the piezoelectric ceramic, and F is the external exciting force. As can be seen from equation (1), the transduction coefficient dominates the energy density of the energy harvesting material.
In addition, considering that the high-temperature piezoelectric energy collector still faces the impact of temperature change in the practical application process, the transduction coefficient of the piezoelectric material is kept stable (the fluctuation rate (eta) is less than or equal to +/-15%) in a wide temperature range (25-300 ℃), and the safe and reliable operation of the device is favorably ensured. Therefore, the temperature stability of the transduction coefficient of the high-temperature piezoelectric energy collecting material was evaluated on the basis of 200 ℃, and the temperature fluctuation rate (η) of the transduction coefficient (d · g) was expressed as:
Figure BDA0003465264530000021
wherein, (d.g)TIs the transduction coefficient of the material at a certain test temperature, (d.g)200℃The transduction coefficient of the material at 200 ℃.
In the invention, BiScO is used3-PbTiO3(BS-PT for short) as matrix, and introducing Bi (Zn)2/3Ta1/3)O3Primitive, construct zBiScO3-yBi(Zn2/3Ta1/3)O3-xPbTiO3(zBS-yBZT-xPT) ternary high-temperature piezoelectric ceramic material system. Wherein the optimal BS-BZT-PT sample not only has high Curie temperature, but also has high and stable temperature transduction coefficient (d) at 25-300 DEG C33·g33=12481×10-15m2The eta is less than or equal to +/-15 percent) and is far superior to the piezoelectric material of 0.36BS-0.64PT in the patent CN 107698252A. So far, the excellent transduction coefficient and temperature stability materials of the system are not reported.
Disclosure of Invention
The invention is characterized in that Sc ions in a BS-PT matrix are replaced by the combination of Zn and Ta composite ions with strong ferroelectricity activity and large element mass, and the combination is based on metastable Bi (Zn)2/3Ta1/3)O3The elements have high squareness, so that the displacement amplitude of B-site ions in the perovskite oxygen octahedron and the temperature stability of a phase structure are enhanced, and a multiple phase boundary design theory is combined, so that the high Curie temperature, high thermal stability and transduction coefficient are obtained.
The invention aims to obtain a high-temperature piezoelectric material zBS-yBZT-xPT with high Curie temperature, high temperature and stable transduction coefficient, thereby laying a solid material foundation for preparing a high-temperature piezoelectric energy collector with excellent electromechanical conversion capability in a wide temperature range.
Material characteristics of the inventionIn that, zBiScO3-yBi(Zn2/3Ta1/3)O3-xPbTiO3In (zBS-yBZT-xPT for short), x is more than or equal to 0.605 and less than or equal to 0.64, y is more than or equal to 0.005 and less than or equal to 0.03, and z takes the value of 1-x-y. Preferably, x is 0.620, x is 0.01, and z is 0.37, i.e., 0.37BS-0.01BZT-0.620PT, and the sample has a transduction coefficient d at 200 ℃33·g33=12481×10-15m2and/N, the fluctuation rate eta is less than or equal to +/-15% at 25-300 ℃, and the method can be used for preparing advanced high-temperature piezoelectric energy collecting devices.
The preparation method of the high-temperature piezoceramic material with high and thermally stable transduction coefficients in the ultra-wide temperature region is characterized by being prepared by a high-temperature solid phase method, and specifically comprises the following steps:
(1) according to zBiScO3-yBi(Zn2/3Ta1/3)O3-xPbTiO3(x is more than or equal to 0.605 and less than or equal to 0.64, y is more than or equal to 0.005 and less than or equal to 0.03, and z is 1-x-y) the stoichiometric ratio of elements in the piezoceramic material is respectively weighed2O3、Sc2O3、ZnO、Ta2O5、Pb3O4、TiO2Putting the weighed raw materials into a ball milling tank, putting the raw materials into a horizontal ball mill by taking absolute ethyl alcohol as a medium, carrying out ball milling for 24 hours, and then putting the obtained mixture into an oven at 100 ℃ for drying;
(2) grinding the dried mixture, placing the ground mixture into an alumina crucible, calcining the mixture at 800 ℃, preserving heat for 2 hours, and cooling the mixture to room temperature along with a furnace;
(3) pouring the calcined powder into a ball milling tank, and adding absolute ethyl alcohol for secondary ball milling, wherein the ball milling time is 24 hours;
(4) adding a binder into the powder obtained by secondary ball milling, granulating, sieving, pressing under pressure to prepare a ceramic biscuit, and heating for removing gel;
if polyvinyl alcohol (PVA) binder with the mass fraction of 5 wt.% is added, the pressure is maintained for 2min under the uniaxial pressure of 100MPa, the ceramic biscuit is pressed, then the binder removal treatment is carried out at 560 ℃, the temperature is kept for 3h, and the ceramic biscuit is cooled to the room temperature along with the furnace;
(5) sintering the biscuit body subjected to the binder removal treatment at 1050-1150 ℃, preserving heat for 2 hours, and cooling to room temperature along with a furnace; preferably 1150 deg.c.
And (3) carrying out surface polishing treatment on the sintered ceramic sample, sintering and infiltrating a silver electrode, and then placing the ceramic sample in 120 ℃ silicon oil to polarize for 30min at a voltage of 4 kV/mm. And after aging for 24 hours at room temperature, testing the electrical property of the ceramic sample.
The optimum ceramic sample composition for obtaining a pure perovskite structure is 0.620, 0.01 and 0.37, namely 0.37BS-0.01BZT-0.620 PT. Through in-situ temperature change test, the sample has an energy conversion coefficient d at 200 DEG C33·g33=12481×10-15m2and/N, the fluctuation rate eta is less than or equal to +/-15% at 25-300 ℃, and the application requirement of the high-temperature piezoelectric energy collector can be met.
Compared with the prior art, the invention has the following advantages:
(1) the optimal sample in the invention has high Curie temperature and high transduction coefficient, is beneficial to enhancing the electromechanical transformation capability of the high-temperature piezoelectric energy collector, and is a ceramic material for collecting high-temperature piezoelectric energy with high competitiveness.
(2) The optimal sample transduction coefficient has excellent temperature stability in an ultra-wide temperature region of 25-300 ℃, is beneficial to enhancing the temperature reliability of device operation, and is a high-temperature piezoelectric energy collecting ceramic material with great potential for wide-temperature application.
Drawings
FIG. 1 is an XRD spectrum of a ceramic material of 0.365BS-0.005BZT-0.630PT (0.5-630 for short), 0.37BS-0.01BZT-0.620PT (1-620 for short), 0.36BS-0.02BZT-0.620PT (2-620 for short) and 0.355BS-0.03BZT-0.615PT (3-615 for short) in the practice of the present invention.
FIG. 2 is a graph showing the in-situ temperature-varying transduction coefficients (d) of 0.365BS-0.005BZT-0.630PT (0.5-630 for short) 0.37BS-0.01BZT-0.620PT (1-620 for short), 0.36BS-0.02BZT-0.620PT (2-620 for short) and 0.355BS-0.03BZT-0.615PT (3-615 for short) ceramic materials in accordance with an embodiment of the present invention33·g33) The test frequency was 100 Hz.
FIG. 3 shows the data of 0.365BS-0.005BZT-0.630PT (0.5-630 for short), 0.37BS-0.01BZT-0.620PT (1-620 for short), 0.36BS-0.02BZT-0.620PT (2-620 for short), and 0.355BS-0.03 PTGraph comparing in-situ temperature change transduction coefficient temperature fluctuation rate (eta) of BZT-0.615PT (3-615 for short) ceramic material, wherein d is 200 deg.C33·g33For reference, the temperature stability of the high temperature piezoelectric energy harvesting ceramic material was evaluated.
Detailed Description
The present invention will be described in detail below by way of examples, which are for illustrative purposes only and are not intended to limit the present invention.
The invention provides a high-temperature piezoelectric energy collection ceramic material with a wide-temperature stable transduction coefficient, which is characterized by comprising the chemical composition of zBiScO3-yBi(Zn2/3Ta1/3)O3-xPbTiO3(x is more than or equal to 0.605 and less than or equal to 0.64, y is more than or equal to 0.005 and less than or equal to 0.03, and z is 1-x-y). The raw materials of the composition comprise: bi2O3、Sc2O3、ZnO、Ta2O5、Pb3O4And TiO2. The preparation method comprises the following steps: firstly, weighing raw materials according to the stoichiometric ratio of each component, then putting the raw materials into a ball milling tank, ball milling the raw materials for 24 hours by taking absolute ethyl alcohol as a medium, and then placing the obtained mixture into an oven at 100 ℃ for drying; grinding the dried mixture, putting the ground mixture into a closed alumina crucible, calcining the mixture at 800 ℃, preserving heat for 2 hours, and cooling the mixture to room temperature along with a furnace; placing the calcined product and ball milling medium absolute ethyl alcohol into a ball milling tank for secondary ball milling for 24 hours, and then drying the ball milling slurry at 100 ℃; adding a binder with the mass fraction of about 5 wt.% into the dried powder, granulating, sieving, pressing into a ceramic biscuit, discharging the glue, sintering at 1150 ℃, preserving the heat for 2h, and cooling to room temperature along with the furnace. And (3) carrying out surface polishing treatment on the sintered ceramic sample, sintering and infiltrating a silver electrode, and then placing the ceramic sample in 120 ℃ silicon oil to polarize for 30min at a voltage of 4 kV/mm. And after aging for 24 hours at room temperature, testing the electrical property of the ceramic sample.
The essential features and the significant advantages of the invention are further clarified by the following examples. It should be noted that the invention is in no way limited to the embodiments presented.
Example 1:
according to the chemical formula of 0.365BS-0.005BZT-0.630PT (0.5-630) weight of Bi2O3、Sc2O3、ZnO、Ta2O5、Pb3O4And TiO2And ball milling is carried out for 24 hours by taking absolute ethyl alcohol as a medium. The mixture is calcined for 2 hours at 800 ℃ after being dried at 100 ℃; and adding absolute ethyl alcohol, performing secondary ball milling for 24 hours, adding a binder with the mass fraction of about 5 wt.% into the dried powder, granulating, sieving, pressing into a ceramic biscuit, performing binder removal treatment, sintering at 1150 ℃, preserving heat for 2 hours, and cooling to room temperature along with the furnace. And (3) carrying out surface polishing treatment on the sintered ceramic sample, sintering and infiltrating a silver electrode, and then placing the ceramic sample in 120 ℃ silicon oil to polarize for 30min at a voltage of 4 kV/mm. And after aging for 24 hours at room temperature, testing the electrical property of the ceramic sample.
Example 2:
the ceramic material 0.37BS-0.01BZT-0.620PT (1-620) was prepared in the same manner as in example 1.
Example 3:
the ceramic material 0.36BS-0.02BZT-0.620PT (2-620) was prepared in the same manner as in example 1.
Example 4
The ceramic material 0.355BS-0.03BZT-0.615PT (3-615 for short) was prepared in the same manner as in example 1.
Table 1 comparative table of properties of the above examples
Figure BDA0003465264530000061

Claims (5)

1. A high-temperature piezoelectric energy collection ceramic material with a wide-temperature stable transduction coefficient is characterized in that the chemical composition general formula is as follows: zBiScO3-yBi(Zn2/3Ta1/3)O3-xPbTiO3,0.605≤x≤0.64,0.005≤y≤0.03,z=1-x-y。
2. The high temperature piezoelectric energy harvesting ceramic material having a broad temperature stability transduction coefficient according to claim 1, wherein x is 0.620, y is 0.01, and z is 0.37.
3. A high temperature piezoelectric energy harvesting ceramic material having a wide temperature range stable transduction coefficient according to claim 1, wherein the ceramic sample having x 0.620, y 0.01, and z 0.37 has a high curie temperature 441 ℃ and a transduction coefficient d of 200 ℃33·g33=12481×10-15m2the/N is taken as a reference, and the fluctuation rate (eta) of the transduction coefficient is not more than +/-15% at the temperature of 25-300 ℃.
4. A method for the preparation of a ceramic material according to any of claims 1-3, characterized in that it is prepared according to the following steps:
(1) the raw material Bi2O3、Sc2O3、ZnO、Ta2O5、Pb3O4And TiO2Weighing the piezoelectric ceramic material according to the stoichiometric ratio of elements, putting the weighed raw materials into a ball milling tank, putting the raw materials into a horizontal ball mill by taking absolute ethyl alcohol as a medium, carrying out ball milling for 24 hours, and then putting the obtained mixture into an oven at 100 ℃ for drying;
(2) grinding the dried mixture, placing the ground mixture into an alumina crucible, calcining the mixture at 800 ℃, preserving heat for 2 hours, and cooling the mixture to room temperature along with a furnace;
(3) pouring the calcined powder into a ball milling tank, adding absolute ethyl alcohol for secondary ball milling for 24 hours, and then placing the obtained mixture into an oven at 100 ℃ for drying;
(4) adding a binder into the dried powder, granulating, sieving, pressing under pressure to prepare a ceramic biscuit, and heating for removing glue;
(5) sintering the biscuit body subjected to the binder removal treatment at 1150 ℃, preserving heat for 2 hours, and cooling to room temperature along with the furnace;
(6) and polishing the prepared ceramic wafer, sintering and infiltrating a silver electrode, and artificially polarizing to obtain the piezoelectric ceramic material.
5. Use of a ceramic material according to any of claims 1-3 for a piezoelectric energy harvester.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115385683A (en) * 2022-08-29 2022-11-25 西安交通大学 Piezoceramic material with high Curie temperature and high piezoelectric coefficient and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101365829A (en) * 2005-11-04 2009-02-11 赛若朴有限公司 Piezoeletric single crystal and method of production of same, piezoelectric element, and dielectric element
CN107698252A (en) * 2017-10-13 2018-02-16 北京工业大学 Application and preparation method of a kind of ceramic material as high-temperature stable piezoelectric energy collection material
EP3409651A1 (en) * 2017-05-31 2018-12-05 Consejo Superior de Investigaciones Cientificas (CSIC) A high temperature and power piezoelectric, bisco3-pbtio3 based ceramic material microstructurally engineered for enhanced mechanical performance, a procedure for obtaining said ceramic material and its use as part of an ultrasound generation device or ultrasonic actuation device
EP3409652A1 (en) * 2017-05-31 2018-12-05 Consejo Superior de Investigaciones Cientificas (CSIC) A high temperature and voltage response piezoelectric, bisco3-pbtio3 based ceramic material microstructurally engineered for enhanced mechanical performance, a procedure for obtaining said ceramic material and its use as sensing device
CN110451955A (en) * 2019-08-14 2019-11-15 清华大学 Unleaded relaxation ferroelectric energy storage ceramic of bismuth sodium titanate-barium titanate base and preparation method thereof
CN111393160A (en) * 2020-04-17 2020-07-10 北京工业大学 Application of ceramic material as high-temperature piezoelectric energy collecting material and preparation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101365829A (en) * 2005-11-04 2009-02-11 赛若朴有限公司 Piezoeletric single crystal and method of production of same, piezoelectric element, and dielectric element
EP3409651A1 (en) * 2017-05-31 2018-12-05 Consejo Superior de Investigaciones Cientificas (CSIC) A high temperature and power piezoelectric, bisco3-pbtio3 based ceramic material microstructurally engineered for enhanced mechanical performance, a procedure for obtaining said ceramic material and its use as part of an ultrasound generation device or ultrasonic actuation device
EP3409652A1 (en) * 2017-05-31 2018-12-05 Consejo Superior de Investigaciones Cientificas (CSIC) A high temperature and voltage response piezoelectric, bisco3-pbtio3 based ceramic material microstructurally engineered for enhanced mechanical performance, a procedure for obtaining said ceramic material and its use as sensing device
CN107698252A (en) * 2017-10-13 2018-02-16 北京工业大学 Application and preparation method of a kind of ceramic material as high-temperature stable piezoelectric energy collection material
CN110451955A (en) * 2019-08-14 2019-11-15 清华大学 Unleaded relaxation ferroelectric energy storage ceramic of bismuth sodium titanate-barium titanate base and preparation method thereof
CN111393160A (en) * 2020-04-17 2020-07-10 北京工业大学 Application of ceramic material as high-temperature piezoelectric energy collecting material and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HAIYAN ZHAO: "Giant high-temperature piezoelectricity in perovskite oxides for vibration energy harvesting", 《JOURNAL OF MATERIALS CHEMISTRY A》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115385683A (en) * 2022-08-29 2022-11-25 西安交通大学 Piezoceramic material with high Curie temperature and high piezoelectric coefficient and preparation method thereof

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