CN114300936A - Laser drive circuit based on GaN HEMT and monolithic integration method thereof - Google Patents
Laser drive circuit based on GaN HEMT and monolithic integration method thereof Download PDFInfo
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- CN114300936A CN114300936A CN202111636327.4A CN202111636327A CN114300936A CN 114300936 A CN114300936 A CN 114300936A CN 202111636327 A CN202111636327 A CN 202111636327A CN 114300936 A CN114300936 A CN 114300936A
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000010354 integration Effects 0.000 title abstract description 19
- 230000004044 response Effects 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 8
- 229910002601 GaN Inorganic materials 0.000 description 97
- 238000005516 engineering process Methods 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 208000032750 Device leakage Diseases 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- -1 fluorine ions Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
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- 230000010355 oscillation Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Abstract
The present disclosure provides a laser drive circuit based on GaN HEMT, comprising: a first GaN HEMT module configured to output a second voltage pulse signal in response to an input first voltage pulse signal; the voltage pulse inversion module is connected with the first GaN HEMT module and is configured to invert the second voltage pulse signal to obtain a third voltage pulse signal; and the second GaN HEMT module is set to respond to the third voltage pulse signal and output amplified pulse current to drive the laser to emit light. Meanwhile, the invention also provides a laser driving circuit monolithic integration method, which integrates the laser driving circuit.
Description
Technical Field
The present disclosure relates to the field of laser technology, and in particular, to a laser driving circuit based on a gallium nitride high electron mobility transistor (GaN HEMT) and a monolithic integration method thereof.
Background
At present, the laser is in a period of high-speed development, the technology of a laser driving circuit is changed day by day, the existing laser driving circuit is generally composed of a driving chip and a power switch tube which are separated, parasitic parameters of the driving circuit are large, the occupied area of the laser driving circuit cannot well meet requirements in certain application scenes, and although the parasitic parameters can be reduced by adopting a multi-chip packaging mode, the area consumption is still overlarge. Therefore, the optimization problem of the laser driving circuit and the monolithic integration method thereof needs to be solved.
Disclosure of Invention
Technical problem to be solved
Based on the above problems, the present disclosure provides a laser driving circuit based on a GaN HEMT and a monolithic integration method thereof, so as to alleviate technical problems of large parasitic parameters, excessive area consumption and the like of the laser driving circuit and the integrated monolithic in the prior art.
(II) technical scheme
In one aspect of the present disclosure, there is provided a laser driving circuit based on a GaN HEMT, including: a first GaN HEMT module configured to output a second voltage pulse signal in response to an input first voltage pulse signal; the voltage pulse inversion module is connected with the first GaN HEMT module and is configured to invert the second voltage pulse signal to obtain a third voltage pulse signal; and the second GaN HEMT module is set to respond to the third voltage pulse signal and output amplified pulse current to drive the laser to emit light.
According to the embodiment of the disclosure, the first voltage pulse signal provides milliampere-level pulse current for the first GaN HEMT module, and the first GaN HEMT module amplifies the milliampere-level pulse current into ampere-level pulse current.
According to the embodiment of the disclosure, the third voltage pulse signal provides ampere-level pulse current for the second GaN HEMT module, and the second GaN HEMT module amplifies the ampere-level pulse current into dozens of ampere-level pulse current.
According to the embodiment of the present disclosure, the first voltage pulse signal and the second voltage pulse signal are inverted; the first voltage pulse signal is a positive pulse signal, and the second voltage pulse signal is a negative pulse signal.
According to an embodiment of the present disclosure, the second voltage pulse signal and the third voltage pulse signal are inverted; the second voltage pulse signal is a negative pulse signal, and the third voltage pulse signal is a positive pulse signal.
According to an embodiment of the present disclosure, the first GaN HEMT module serves as an input stage of a laser driving circuit, and includes: the first GaN HEMT is connected with the signal generator; and a pull-up resistor, one end of which is connected with the drain electrode of the first GaN HEMT, and the other end of which is connected to a first driving power supply (VDD).
According to an embodiment of the present disclosure, a second GaN HEMT module as an output stage of a laser driving circuit, the second GaN HEMT module includes: the grid electrode of the second GaN HEMT is connected with the drain electrode of the PMOS tube; and the negative electrode of the laser is connected with the drain electrode of the second GaN HEMT, and the positive electrode of the laser is connected with a second driving power supply (VCC).
According to the embodiment of the present disclosure, the pulse inversion module as an intermediate stage of a laser driving circuit includes: a grid electrode of the PMOS tube is connected with a drain electrode of the first GaN HEMT; and one end of the pull-down resistor is connected with the drain electrode of the PMOS tube, and the other end of the pull-down resistor is connected to GND.
According to an embodiment of the present disclosure, the second GaN HEMT size is larger than the first GaN HEMT size.
In another aspect of the present disclosure, there is provided a laser driving circuit monolithic integration method for integrating the laser driving circuit described in any one of the above, the monolithic integration method comprising: preparing a first GaN HEMT module and a second GaN HEMT module on the same substrate to obtain a first semiconductor bare chip; preparing a pulse inversion module on another substrate to obtain a second semiconductor bare chip; and integrating the first semiconductor die and the second semiconductor die together in a 3D stacked package.
(III) advantageous effects
According to the technical scheme, the laser driving circuit based on the GaN HEMT and the monolithic integration method thereof have at least one or part of the following beneficial effects:
(1) narrow pulse and large current can be realized simultaneously;
(2) the circuit is simplified, the circuit area is reduced, and monolithic integration and miniaturization are more easily completed by adopting 3D stacked packaging;
(3) the parasitic effect can be reduced.
Drawings
Fig. 1 is a schematic circuit diagram of a laser driving circuit based on a GaN HEMT according to an embodiment of the present disclosure.
Fig. 2 is a schematic diagram of an output waveform of an optical pulse emitted by a laser driven by a GaN HEMT-based laser driving circuit under different input pulse widths according to an embodiment of the present disclosure.
Fig. 3 is a schematic diagram of an average optical power of output laser and an average electric power of a power supply VCC when a laser is driven by a GaN HEMT-based laser driving circuit with different input pulse widths according to an embodiment of the present disclosure.
Fig. 4 is a flowchart of a monolithic integration method of a laser driving circuit based on a GaN HEMT according to an embodiment of the present disclosure.
[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure
M1-first GaN HEMT;
M2-PMOS tube
M3-second GaN HEMT;
r1, R2-resistance;
an L-laser.
Detailed Description
The invention provides a laser driving circuit based on a GaN HEMT and a monolithic integration method thereof, relates to an integrated resistor in a GaN HEMT process, a Si power PMOS process and two processes, relates to 3D stacked packaging, and mainly relates to a narrow pulse laser small driving circuit. By replacing the driving mode of a power switch tube in a laser driving circuit and the power switch tube, the second GaN HEMT with larger size is adopted to replace the power switch tube, the module where the first GaN HEMT with smaller size is positioned is adopted to replace a grid driving IC, the PMOS of the first-stage Si is added in the drain output mode, and the drain output of the PMOS is enabled to obtain positive pulse.
Currently, there are 4 popular enhancement technologies, namely, a Cascode technology, a groove gate technology, a fluorine ion implantation technology and a P-type gate technology. For example, various high voltage GaN commercial devices are designed using a Cascode structure, which is relatively simple compared to other enhanced technologies. The enhancement type silicon MOSFET and the depletion type GaN HEMT device are placed in series, the source electrode of the GaN HEMT is connected with the drain electrode of the MOSFET, the grid electrode of the GaN HEMT is connected with the source electrode of the MOSFET to serve as the source electrode of the whole device, the drain electrode of the GaN HEMT serves as the drain electrode of the whole device, and the grid electrode of the MOSFET serves as the grid electrode of the whole device. But the low on-resistance advantage of GaN HEMTs at low voltages would disappear with this technique. Still others have investigated enhancement-mode techniques using MIS recessed gate structures. The notched gate technique is a technique of enhancement type by thinning the A1GaN barrier layer over the 2 DEG. Due to the limitation of the manufacturing process, the traditional dry etching technology brings great lattice damage to the groove, finally, the electric leakage of the device is great, and the performance and the reliability of the device are reduced. Furthermore, device overall performance still faces significant challenges in terms of threshold voltage uniformity and device leakage control due to the difficulty in accurately controlling recess etch depth and uniformity. Fluorine ion implantation is a GaN device enhancement technology, and is a method for implanting fluorine ions into an AlGaN barrier layer under a gate to realize an enhancement device. Due to the limitations of the ion implantation process level, it is difficult to precisely control the implantation depth, concentration and distribution uniformity during the fluorine ion implantation, which results in unstable threshold voltage of the actual device. In addition, the injection process brings lattice damage which is difficult to repair to the device, so that the mobility of two-dimensional electron gas is influenced, and the whole electric conductivity of the device is reduced. The P-type GaN technology is the most widely applied method for commercial power GaN devices, and several enterprises realize the commercialization of GaN enhanced devices by using the technology. A P-type GaN layer is added between an AlGaN barrier layer and a gate electrode. The P-type GaN layer can deplete the 2DEG under the gate, leaving the device in an off state when no gate voltage is applied. This is also one way to achieve the most robust enhancement. The technical scheme of the disclosure also adopts a GaN HEMT with a P-type grid structure.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
In an embodiment of the present disclosure, a laser driving circuit based on a GaN HEMT is provided, as shown in fig. 1, the laser driving circuit based on the GaN HEMT includes:
a first GaN HEMT module configured to output a second voltage pulse signal in response to an input first voltage pulse signal;
the voltage pulse inversion module is connected with the first GaN HEMT module and is configured to invert the second voltage pulse signal to obtain a third voltage pulse signal; and
and the second GaN HEMT module is set to respond to the third voltage pulse signal and output amplified pulse current to drive the laser L to emit light.
According to the embodiment of the disclosure, the first voltage pulse signal provides milliampere-level pulse current for the first GaN HEMT module, and the first GaN HEMT module amplifies the milliampere-level pulse current into ampere-level pulse current. The third voltage pulse signal provides ampere-level pulse current for the second GaN HEMT module, and the second GaN HEMT module amplifies the ampere-level pulse current into dozens of ampere-level pulse current. According to the embodiment of the present disclosure, the first voltage pulse signal and the second voltage pulse signal are inverted, and the second voltage pulse signal and the third voltage pulse signal are inverted. The first voltage pulse signal is a positive pulse signal, and the second voltage pulse signal is a negative pulse signal. The second voltage pulse signal is a negative pulse signal, and the third voltage pulse signal is a positive pulse signal.
According to an embodiment of the present disclosure, the first GaN HEMT module serves as an input stage of a laser driving circuit, and includes: the first GaN HEMT is connected with the signal generator; and one end of the pull-up resistor is connected with the drain electrode of the first GaN HEMT, and the other end of the pull-up resistor is connected to a first driving power supply VDD. A second GaN HEMT module as an output stage of a laser driving circuit, the second GaN HEMT module comprising: the grid electrode of the second GaN HEMT is connected with the drain electrode of the PMOS tube; and the negative electrode of the laser L is connected with the drain electrode of the second GaN HEMT, and the positive electrode of the laser L is connected with a second driving power supply VCC. The pulse inversion module is used as an intermediate stage of a laser driving circuit and comprises: a grid electrode of the PMOS tube is connected with a drain electrode of the first GaN HEMT; and one end of the pull-down resistor is connected with the drain electrode of the PMOS tube, and the other end of the pull-down resistor is connected to GND.
According to an embodiment of the present disclosure, the second GaN HEMT size is larger than the first GaN HEMT size.
The invention discloses a laser driving circuit based on a GaN HEMT (high electron mobility transistor), which is based on the practical requirement of a laser detection system. The disclosure includes a circuit schematic diagram as shown in fig. 1, a module (replacing a grid electrode driving IC) where a small-sized first GaN HEMT is located, a large-sized second GaN HEMT (replacing a Si power switch tube), and a design of introducing a pulse inversion module (such as a Si PMOS) as a second stage to realize inversion of pulses, test results and a circuit monolithic integration mode. The circuit schematic diagram comprises two GaN HEMTs with different sizes, a PMOS with Si and two resistors. A first GaN HEMT with small size and a drain pull-up resistor form an input stage of the circuit, and respond to an input positive pulse signal of mA class current and output a negative pulse signal of ampere class current. A PMOS of Si and a drain pull-down resistor form an intermediate stage of the circuit, and respond to a negative pulse signal of the ampere-level current and output a positive pulse signal of the ampere-level current. This positive pulse signal is input to the gate of the large-sized second GaN HEMT, and a peak discharge current of several tens of amperes can be realized at the drain. The small-sized first GaN HEMT replaces a gate drive IC: based on the extremely-small gate total charge of the first GaN HEMT with small size, the first GaN HEMT can be switched on and off quickly under the mA-level current output by the signal generator, so that the first GaN HEMT can be used as a response input end of a pulse signal instead of a gate drive IC; meanwhile, the first GaN HEMT with small size has pulse peak current of ampere level, and can rapidly drive a power circuit of a later stage, thereby replacing a gate drive IC to be used as a gate drive of the later stage. The large-size second GaN HEMT replaces a Si power switch tube: based on the GaN HEMT, under the same transverse size, the power MOS tube has higher breakdown voltage than the power MOS tube of Si, so that under the requirement of certain breakdown voltage, the area required by the GaN HEMT is smaller, and the miniaturization is facilitated; meanwhile, the GaN HEMT has a higher upper limit of working frequency, and is beneficial to realizing rapid rising edge and falling edge, so that the GaN HEMT can replace a Si power switch tube. The PMOS with the introduced Si is used as a second stage to realize pulse inversion: the positive pulse signal is changed into a negative pulse after passing through an input stage of the circuit, the output end of the circuit is required to be a voltage negative pulse and a current positive pulse, the negative pulse output by the input stage needs to be converted into the positive pulse, and the GaN HEMT does not have a suitable P channel realization form at present, so that the PMOS with Si is a simple pulse inversion realization form without introducing large power consumption. The test result refers to the pulse light waveform emitted by the circuit driving laser, the average electric power of the power supply VCC and the average optical power of the output laser under different input pulse widths. The laser used is a semiconductor laser with the wavelength of 860nm, the test frequency is 10kHz, the input pulse voltage is 5V, the power supply VDD voltage is 5V, and the power supply VCC voltage is 12V. The test principle is as follows: VCC electrical power is read directly from the power supply screen; the pulse light waveform is obtained by connecting a detector with an oscilloscope and observing on the oscilloscope; the optical power is measured directly by a laser power meter. As shown in fig. 2 and fig. 3, as can be seen from fig. 2, the minimum input signal pulse width to which the circuit can respond is 10ns, and the peak value of the output optical signal increases with the increase of the input signal pulse width and then tends to be unchanged; as can be seen from fig. 3, the average output power of the voltage source VCC and the average output optical power of the laser increase substantially linearly with the increase of the pulse width of the input signal.
The present disclosure also provides a laser driving circuit monolithic integration method for integrating the laser driving circuit, as shown in fig. 4, the monolithic integration method includes:
operation S1: preparing a first GaN HEMT module and a second GaN HEMT module on the same substrate to obtain a first semiconductor bare chip;
operation S2: preparing a pulse inversion module on another substrate to obtain a second semiconductor bare chip;
operation S3: integrating the first semiconductor die and the second semiconductor die together in a 3D stacked package.
The design of the monolithic circuit integration mode: the small-size pull-up resistor connected with the drain electrode of the first GaN HEMT can be used for manufacturing a channel resistor by using a GaN HEMT manufacturing process, the small-size pull-up resistor connected with the drain electrode of the first GaN HEMT can be used for manufacturing the channel resistor by using the GaN HEMT manufacturing process, the primitive cells of the GaN HEMTs with different sizes can be designed by adopting the same parameters, the GaN HEMTs with different sizes can be formed by connecting different numbers of primitive cells in parallel, and R1, M1 and M3 can be manufactured on one substrate; similarly, M2 and R2 can be fabricated on a substrate, and finally, a 3D stacked package is used to integrate the two dies together, so that monolithic integration can be achieved, the circuit area can be greatly reduced, and parasitic effects can be reduced.
The whole circuit is realized on a pcb board, and the whole area is 13.8mm by 11.4 mm. The GaN HEMT adopts EPC2036 and EPC2045, the PMOS adopts NCE2303, the two resistors adopt common chip resistors, and the resistance values are both 3.9 omega. A semiconductor laser with a wavelength of 860nm is used, the test frequency is 10kHz, the input pulse voltage is 5V, the power supply VDD voltage is 5V, and the power supply VCC voltage is 12V. And measuring the pulse light waveform emitted by the circuit driving laser, the average electric power of the discharge loop power supply VCC and the average light power output by the light pulse under different input pulse widths. The electric power of the discharge loop is directly read from the power supply screen; the pulse light waveform is obtained by connecting a detector with an oscilloscope and observing on the oscilloscope; the optical power is measured directly by a laser power meter.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.
From the above description, those skilled in the art should clearly recognize that the present disclosure is based on a GaN HEMT laser driving circuit and its monolithically integrating method.
In summary, the present disclosure provides a laser driving circuit based on a GaN HEMT and a monolithic integration method thereof, where the small-sized GaN HEMT can work normally under the direct drive of a signal generator, has a fast rising edge and a falling edge, and has a low pulse peak current for driving a subsequent circuit. In order to avoid the oscillation phenomenon under the source electrode driving mode, a drain electrode driving mode is adopted, a drain electrode is connected with a pull-up resistor, and positive pulses input by a grid electrode are changed into negative pulses at the drain electrode. The drain is connected to the grid of a Si PMOS, and the drain of the PMOS is connected with a pull-down resistor, so that the inversion of the pulse is realized. And connecting the drain electrode of the PMOS to the grid electrode of the rear-stage switching tube to realize pulse discharge control of the laser discharge loop. The drive circuit adopts the one-level GaN HEMT and the one-level Si PMOS to replace the traditional grid drive IC, thereby simplifying the circuit, reducing the circuit area and more easily completing the monolithic integration and miniaturization while realizing the narrow pulse and the large current.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure. And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. A GaN HEMT-based laser drive circuit comprising:
a first GaN HEMT module configured to output a second voltage pulse signal in response to an input first voltage pulse signal;
the voltage pulse inversion module is connected with the first GaN HEMT module and is configured to invert the second voltage pulse signal to obtain a third voltage pulse signal; and
and the second GaN HEMT module is set to respond to the third voltage pulse signal and output amplified pulse current to drive the laser to emit light.
2. The GaN HEMT-based laser driving circuit of claim 1, the first voltage pulse signal provides a milliamp pulse current to a first GaN HEMT module, which amplifies the milliamp pulse current to an amp pulse current.
3. The GaN HEMT-based laser driving circuit of claim 1, the third voltage pulse signal provides an ampere-level pulse current to a second GaN HEMT module, which amplifies the ampere-level pulse current to a tens of ampere-level pulse current.
4. The GaN HEMT-based laser driving circuit of claim 1, the first and second voltage pulse signals being inverted; the first voltage pulse signal is a positive pulse signal, and the second voltage pulse signal is a negative pulse signal.
5. The GaN HEMT-based laser driving circuit of claim 1, the second and third voltage pulse signals being inverted; the second voltage pulse signal is a negative pulse signal, and the third voltage pulse signal is a positive pulse signal.
6. The GaN HEMT-based laser driving circuit of claim 1, the first GaN HEMT module being an input stage of the laser driving circuit, the first GaN HEMT module comprising:
the first GaN HEMT is connected with the signal generator; and
and one end of the pull-up resistor is connected with the drain electrode of the first GaN HEMT, and the other end of the pull-up resistor is connected to a first driving power supply (VDD).
7. The GaN HEMT-based laser driving circuit of claim 6, a second GaN HEMT module as an output stage of the laser driving circuit, the second GaN HEMT module comprising:
the grid electrode of the second GaN HEMT is connected with the drain electrode of the PMOS tube; and
and the negative electrode of the laser is connected with the drain electrode of the second GaN HEMT, and the positive electrode of the laser is connected with a second driving power supply (VCC).
8. The GaN HEMT-based laser driving circuit of claim 1, the pulse inversion module acting as an intermediate stage of the laser driving circuit, comprising:
a grid electrode of the PMOS tube is connected with a drain electrode of the first GaN HEMT; and
and one end of the pull-down resistor is connected with the drain electrode of the PMOS tube, and the other end of the pull-down resistor is connected to GND.
9. The GaN HEMT-based laser drive circuit of claim 7, the second GaN HEMT dimension being larger than the first GaN HEMT dimension.
10. A method of monolithically integrating a laser driver circuit as claimed in any of claims 1 to 9, the method comprising:
preparing a first GaN HEMT module and a second GaN HEMT module on the same substrate to obtain a first semiconductor bare chip;
preparing a pulse inversion module on another substrate to obtain a second semiconductor bare chip; and
integrating the first semiconductor die and the second semiconductor die together in a 3D stacked package.
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| US10742208B1 (en) * | 2018-04-13 | 2020-08-11 | Hrl Laboratories, Llc | Circuit for driving switched transistor and filter, circulator and correlator including the same |
| CN112640124A (en) * | 2018-06-27 | 2021-04-09 | 李湛明 | Gallium nitride device, gate drive circuit of integrated circuit and voltage regulator |
| CN113225050A (en) * | 2021-05-18 | 2021-08-06 | 芜湖麦可威电磁科技有限公司 | Schmitt trigger based on GaAs HEMT technology |
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- 2021-12-28 CN CN202111636327.4A patent/CN114300936A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10742208B1 (en) * | 2018-04-13 | 2020-08-11 | Hrl Laboratories, Llc | Circuit for driving switched transistor and filter, circulator and correlator including the same |
| CN112640124A (en) * | 2018-06-27 | 2021-04-09 | 李湛明 | Gallium nitride device, gate drive circuit of integrated circuit and voltage regulator |
| CN110492349A (en) * | 2019-08-20 | 2019-11-22 | 上海禾赛光电科技有限公司 | Driving circuit, driving method and Optical Maser System |
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