CN114300599A - Color conversion layer manufacturing method, display panel and display device - Google Patents
Color conversion layer manufacturing method, display panel and display device Download PDFInfo
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Abstract
The application relates to the technical field of display, and provides a color conversion layer manufacturing method, a display panel and a display device. According to the color conversion layer manufacturing method, the plurality of light resistance layers which are arranged at intervals are formed on the first surface of the substrate, the light resistance layers are made of the positive photoresist, the size of the area occupied by each quantum dot layer is convenient to adjust when the quantum dot layers are formed, then the quantum dot layers are formed on the exposed surfaces formed on the first surface of the substrate and the side surface of the light resistance layer, which is far away from the substrate, the light resistance layer on the first surface of the substrate is removed, only the quantum dot layer between two adjacent light resistance layers is reserved at the time, and therefore the line width of the formed quantum dot layer is naturally narrow. Meanwhile, the steps can be repeated according to the use requirement until the use requirement is met. Therefore, the line width and the line distance of the quantum dot layer in the display panel are smaller, and the display effect is good.
Description
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to a method for manufacturing a color conversion layer, a display panel, and a display device.
Background
In the related art, when the color conversion layer is manufactured, the manufacturing accuracy is limited, and the line width of the quantum dot layer cannot be small, which causes the problems that the distance between adjacent pixel regions in the display panel is large and the display effect is poor.
Disclosure of Invention
Accordingly, it is desirable to provide a method for manufacturing a color conversion layer, a display panel and a display device, so as to solve the problems of large pitch between adjacent pixel regions and poor display effect in the display panel.
According to an aspect of the present application, an embodiment of the present application provides a method for manufacturing a color conversion layer, including the following steps:
forming a plurality of photoresist layers arranged at intervals on the first surface of the substrate; the light resistance layer is made of positive photoresist;
forming a quantum dot layer on an exposed surface formed by the first surface of the substrate and one side surface of the photoresist layer, which is far away from the substrate;
removing the photoresist layer on the first surface of the substrate to form a plurality of quantum dot layers spaced apart from each other on the first surface of the substrate;
repeating the steps of forming the photoresist layer, forming the quantum dot layer and removing the photoresist layer until a preset condition is met to form a color conversion layer;
wherein, every time except for the first time, when a plurality of photoresist layers are formed on the first surface of the substrate at intervals, the formed plurality of photoresist layers cover all the quantum dot layers on the first surface of the substrate.
In one embodiment, the forming a plurality of photoresist layers spaced apart from each other on the first surface of the substrate specifically includes:
coating a positive photoresist on the first surface of the substrate to form a photoresist film;
and processing the photoresist film through exposure, development, baking and etching processes to form a plurality of photoresist layers arranged at intervals.
In one embodiment, the removing the photoresist layer on the first surface of the substrate to form a plurality of quantum dot layers spaced apart from each other on the first surface of the substrate specifically includes:
treating the surface of the quantum dot layer by a surface modification process to make the surface of the quantum dot layer hydrophilic;
dissolving the photoresist layer on the first surface of the substrate by a hydrophobic solvent.
In one embodiment, each time the quantum dot layer is formed on the exposed surface formed by the first surface of the substrate and the side surface of the photoresist layer facing away from the substrate, the quantum dot layer is formed as a quantum dot layer having a single color.
In one embodiment, the height of each quantum dot layer is the same in a direction perpendicular to the first surface of the substrate.
In one embodiment, the quantum dot layer has a height of 1 to 10 microns.
In one embodiment, the projection of each quantum dot layer on the first surface is a square, and the side of the square is 1-10 microns.
In one embodiment, the distance between every two adjacent quantum dot layers in the color conversion layer is 3 to 30 micrometers.
In one embodiment, the quantum dot layer comprises a red quantum dot layer, a green quantum dot layer and a blue quantum dot layer which are respectively arranged at intervals;
the red quantum dot layer is provided with a red quantum dot light resistor, the green quantum dot layer is provided with a green quantum dot light resistor, and the blue quantum dot layer is provided with a blue quantum dot light resistor.
According to another aspect of the present application, an embodiment of the present application provides a display panel, including:
a substrate, wherein the first surface of the substrate is provided with the color conversion layer obtained by the manufacturing method; and
an LED chip disposed opposite the color conversion layer.
In one embodiment, the LED chip includes an LED chip for emitting white basic light and/or an LED chip for emitting blue basic light.
In one embodiment, the LED chip is a Micro-LED chip.
In one embodiment, the substrate is made of glass or polyimide.
According to yet another aspect of the present application, an embodiment of the present application provides a display device including the display panel as described above.
Based on the color conversion layer manufacturing method, the display panel and the display device of the embodiment of the application, the plurality of light resistance layers which are arranged at intervals are formed on the first surface of the substrate, the light resistance layers are made of positive photoresist, the size of an area occupied by each quantum dot layer is convenient to adjust when the quantum dot layers are formed, then the quantum dot layers are formed on the exposed surfaces formed on the first surface of the substrate and the surface of one side, away from the substrate, of the light resistance layers, the light resistance layers on the first surface of the substrate are removed, only the quantum dot layers between two adjacent light resistance layers are reserved, and therefore the line width of the formed quantum dot layers is naturally narrow. Meanwhile, the steps can be repeated according to the use requirement until the use requirement is met. Therefore, the line width and the line distance of the quantum dot layer in the display panel are smaller, and the display effect is good.
Drawings
FIG. 1 is a schematic flow chart illustrating a method for fabricating a color conversion layer according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of a color conversion layer in an intermediate state in a method for manufacturing the color conversion layer according to an embodiment of the present disclosure;
FIG. 3 is a schematic view of a color conversion layer in a first state during fabrication thereof according to an embodiment of the present disclosure;
FIG. 4 is a schematic structural diagram of a color conversion layer in a second state when fabricated in one embodiment of an embodiment of the present application;
FIG. 5 is a schematic structural diagram of a color conversion layer in a third state when fabricated according to one embodiment of the present application;
FIG. 6 is a schematic structural diagram of a color conversion layer in a fourth state when the color conversion layer is manufactured according to an embodiment of the present application;
FIG. 7 is a schematic structural diagram of a fifth state in the process of fabricating a color conversion layer according to an embodiment of the present application;
FIG. 8 is a schematic structural diagram of a sixth state in the process of fabricating a color conversion layer according to an embodiment of the present application;
FIG. 9 is a schematic view of a seventh state of a color conversion layer according to an embodiment of the present disclosure;
FIG. 10 is a schematic structural diagram of an eighth state in the process of fabricating a color conversion layer according to an embodiment of the present application;
FIG. 11 is a schematic structural diagram of a ninth state in the process of fabricating a color conversion layer according to an embodiment of the present application;
fig. 12 is a schematic structural view of a tenth state when a color conversion layer is manufactured in one embodiment of the present application;
FIG. 13 is a schematic view of an eleventh state of a color conversion layer according to an embodiment of the present disclosure;
FIG. 14 is a schematic view of a twelfth state of a color conversion layer according to an embodiment of the present disclosure;
notation of elements for simplicity:
100: substrate 110: first surface
200: a photoresist layer 300: quantum dot layer
300 a: red quantum dot layer 300 b: green quantum dot layer
300 c: blue quantum dot layer
h: height x: side length
d: distance z: a first direction
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, specific embodiments of the present application are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth to provide a thorough understanding of embodiments of the present application. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application. The embodiments of this application can be implemented in many different ways than those described herein and similar modifications can be made by those skilled in the art without departing from the spirit of the invention and therefore the embodiments of this application are not limited to the specific embodiments disclosed below.
It is to be understood that the terms "first," "second," and the like as used herein may be used herein to describe various terms of art, and are not to be construed as indicating or implying relative importance or implicit ly indicating a number of technical features being indicated. However, these terms are not intended to be limiting unless specifically stated. These terms are only used to distinguish one term from another. In the description of the embodiments of the present application, "a plurality" or "a plurality" means at least two, e.g., two, three, etc., unless specifically defined otherwise.
In the description of the embodiments of the present application, unless otherwise explicitly stated or limited, the terms "mounted," "connected," "fixed," and the like are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the embodiments of the present application can be understood by those of ordinary skill in the art according to specific situations.
In the description of the embodiments of the present application, unless otherwise explicitly specified or limited, a first feature "on" or "under" a second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "above," and "over" a second feature may mean that the first feature is directly above or obliquely above the second feature, or that only the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely below the second feature, or may simply mean that the first feature is at a lesser level than the second feature.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the present application in the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
To facilitate understanding of technical solutions of the embodiments of the present application, before describing specific embodiments of the present application, some technical terms in the technical field to which the embodiments of the present application belong are briefly explained.
Micro-LED, Micro Light Emitting Diode (LED) scaling and matrixing technology refers to a technology that integrates a high-density, Micro-sized LED array on a driving substrate, such as each pixel can be addressed and individually driven to Light up to realize display. The Micro-LEDs are typically below 100 microns in size.
Epitaxiy, Epitaxy, refers to a technique used in the fabrication of semiconductor devices to grow new crystals on an existing wafer to form a new semiconductor layer. This technique is also known as Epitaxial Growth (Epitaxial Growth); or a crystal grown by an epitaxial technique, and may be a crystal grain produced by an epitaxial technique.
RGB, i.e., color system, color scheme is a color standard in the industry, which obtains various colors by changing three color channels of red (R), green (G), and blue (B) and superimposing them on each other, RGB represents the colors of the three channels of red, green, and blue, and this standard almost includes all colors that can be perceived by human vision, and is one of the most widely used color systems.
Currently, Micro-LED displays generate light with three primary colors, and an epitaxial RGB chip needs to be mounted at a specific position by means of mass transfer. However, the light emitting efficiency of each chip cannot be effectively controlled, and the completion rate of mass transfer cannot achieve the effect of mass production. In the related art, the quantum dots with high luminous purity, which can be patterned after the yellow light process, are used as the color conversion layer, and are matched with the blue backlight chip with high light-emitting stability, so that the full-color effect is realized. An important parameter in the exposure process is the aspect ratio, which represents the ratio of the exposed photoresist size (deep) to the un-exposed photoresist size (wide). The higher the height of the photoresist, the more difficult it is to obtain a small line width after exposure. To meet the requirement of the photolithography etching resolution of semiconductor, the aspect ratio of the photolithography process is also very high.
The inventor of the present application has noted that in the above process, since the quantum dot photo-resist is generally a negative photoresist, the negative photoresist is generally non-transparent and is left where it is illuminated, that is, the negative photoresist must absorb light to be left. Due to the light absorption property, the photoresist has poor adhesiveness, is easy to be eaten by exposure and development, and cannot be used for the line width of the small quantum dot photoresist. In this process, the photolithography process needs to be stable and residue-free to meet the requirement of using a negative photoresist. In addition, aiming at different types of products, equipment is required to be changed into a machine so as to meet the requirement of mass production
In view of this, the embodiments of the present application can effectively pattern a small line width by improving the manufacturing method of the color conversion layer, thereby avoiding some of the aforementioned problems. The following describes a method for manufacturing a color conversion layer provided in the embodiments of the present application with reference to the related descriptions of some embodiments.
It should be noted that the color conversion layer obtained by the method for manufacturing a color conversion layer disclosed in the embodiment of the present application may be used in a Micro-LED display panel, and may also be used in other types of display panels, and the embodiment of the present application does not specifically limit this.
FIG. 1 is a schematic flow chart illustrating a method for fabricating a color conversion layer according to an embodiment of the present disclosure; FIG. 2 is a schematic diagram showing a structure of a color conversion layer in an intermediate state in a method for manufacturing the color conversion layer according to an embodiment of the present disclosure; for convenience of explanation, only portions related to the embodiments of the present application are shown.
Referring to fig. 1 and fig. 2, an embodiment of the present application provides a method for manufacturing a color conversion layer, where the method includes the following steps:
s101, forming a plurality of photoresist layers 200 which are arranged at intervals on the first surface 110 of the substrate 100; the photoresist layer 200 is made of a positive photoresist;
specifically, the substrate 100 is used to support the photoresist layer 200, and the substrate 100 may be made of a light-transmitting material, for example, the substrate 100 may be a glass substrate 100, or may be a polyimide substrate 100. In the embodiment of the present invention, a plurality of photoresist layers 200 spaced apart from each other are formed on the first surface 110 of the substrate 100, so that the area occupied by each photoresist layer 200 can be adjusted when the photoresist layers 200 are formed, and the space between two adjacent photoresist layers 200 can be kept small, thereby adjusting the line width of the quantum dot layer 300 when the quantum dot layer 300 is subsequently disposed between two adjacent photoresist layers 200. In addition, the pitch of the quantum dot layer 300 may be adjusted by adjusting the size of the photoresist layer 200. It should be noted that the first surface 110 of the substrate 100 refers to a side surface of the substrate 100 facing the photoresist layer 200. The line width of the quantum dot layer 300 means that a projection of the quantum dot layer 300 on the first surface 110 of the substrate 100 is a square, and a side length x of the square is the line width. The pitch of quantum dot layer 300 refers to the distance d between two quantum dot layers 300.
In addition, a positive photoresist is also referred to as a positive photoresist. Positive photoresist resins are a type of phenolic aldehyde called novolak, which provides adhesion, chemical resistance to the photoresist, and which dissolves in the developer in the absence of a dissolution inhibitor, which is a photosensitive compound, most commonly Diazonaphthoquinone (DNQ). Before exposure, DNQ is a strong dissolution inhibitor, reducing the dissolution rate of the resin. After uv exposure, DNQ chemically decomposes in the photoresist to become a solubility enhancer, greatly increasing the solubility factor in the developer to 100 or higher. This exposure reaction produces carboxylic acids in the DNQ which are highly soluble in the developer. The positive photoresist has good contrast, so the generated pattern has good resolution. Therefore, the problem that the line width of the small quantum dot light resistor cannot be made due to exposure, development and eating caused by the use of the negative photoresist can be avoided.
In some embodiments, a positive photoresist may be first coated on the first surface 110 of the substrate 100 to form a photoresist film. The photoresist film is then processed through exposure, development, baking, and etching processes to form a plurality of photoresist layers 200 disposed at intervals. Thus, the distance d between the photoresist layers 200 can be adjusted by setting the size of the light-transmitting region on the mask, thereby realizing the adjustment of the line width of the quantum dot layer 300.
S102, forming a quantum dot layer 300 on an exposed surface formed by the first surface 110 of the substrate 100 and the surface of the photoresist layer 200 on the side away from the substrate 100;
specifically, the quantum dot layer 300 has therein quantum dots, which are a nano-scale semiconductor having a characteristic of confining electrons and electron holes, and thus are referred to as quantum dots. In order to allow different regions of the display panel to display the same or different colors, it is necessary to provide a plurality of quantum dot layers 300 on the substrate 100 and control them, respectively, so that different regions of the substrate 100 can emit light of the same or different colors to display the same or different contents. In some embodiments, quantum dot layer 300 may be formed by a coating process.
It should be noted that the "exposed surface" includes the first surface 110 of the substrate 100 between two adjacent photoresist layers 200, and a side surface of the photoresist layer 200 facing away from the substrate 100. That is, the quantum dot layer 300 includes the quantum dot layer 300 on the first surface 110 between two adjacent photoresist layers 200, and the quantum dot layer 300 on a surface of the photoresist layer 200 on a side facing away from the substrate 100.
S103, removing the photoresist layer 200 on the first surface 110 of the substrate 100 to form a plurality of quantum dot layers 300 spaced apart from each other on the first surface 110 of the substrate 100;
specifically, when the photoresist layer 200 on the first surface 110 of the substrate 100 is removed, the quantum dot layer 300 on the surface of the photoresist layer 200 facing away from the substrate 100 is also removed. That is, only the quantum dot layer 300 on the first surface 110 between two adjacent photoresist layers 200 is retained. At this time, a plurality of quantum dot layers 300 disposed to be spaced apart from each other are formed on the first surface 110 of the substrate 100.
In some embodiments, the surface of quantum dot layer 300 may be treated by a surface modification process to make the surface of quantum dot layer 300 hydrophilic, and photoresist layer 200 on first surface 110 of substrate 100 is dissolved by a hydrophobic solvent. Thus, when the photoresist layer 200 is removed, the quantum dot layer 300 is not dissolved by the hydrophobic solvent, and the quantum dot layer 300 remains on the first surface 110 of the substrate 100.
S104, repeating the steps of forming the photoresist layer 200, forming the quantum dot layer 300 and removing the photoresist layer 200 until a preset condition is met to form a color conversion layer; each time except for the first time, a plurality of photoresist layers 200 spaced apart from each other are formed on the first surface 110 of the substrate 100, the formed plurality of photoresist layers 200 cover all the quantum dot layers 300 on the first surface 110 of the substrate 100.
Specifically, since the plurality of quantum dot layers 300 disposed to be spaced apart from each other have been formed on the first surface 110 of the substrate 100 when the plurality of photoresist layers 200 spaced apart from each other are formed on the first surface 110 of the substrate 100 from the second time, the plurality of photoresist layers 200 formed to cover all the quantum dot layers 300 on the first surface 110 of the substrate 100 when the plurality of photoresist layers 200 spaced apart from each other are formed on the first surface 110 of the substrate 100 from the second time. That is, the quantum dot layer 300 is further disposed in a region where the quantum dot layer 300 is not disposed on the first surface 110, and the line width of the newly disposed quantum dot layer 300 may be adjusted by the interval between the plurality of photoresist layers 200 spaced apart from each other. Thus, a plurality of quantum dot layers 300 with controllable line width and line distance can be further obtained.
The predetermined conditions refer to the number of quantum dot layers 300, the pitch of the quantum dot layers 300, and the line width of the quantum dot layers 300 that are required after repeating the required number of times. The selection can be performed according to the use requirement, and the embodiment of the application is not particularly limited.
Thus, by first forming a plurality of photoresist layers 200 spaced apart from each other on the first surface 110 of the substrate 100, the photoresist layers 200 are made of a positive photoresist, which facilitates adjustment of the size of the area occupied by each quantum dot layer 300 when forming the quantum dot layer 300, and then forming the quantum dot layer 300 on the exposed surface formed on the first surface 110 of the substrate 100 and the side surface of the photoresist layer 200 facing away from the substrate 100, the photoresist layer 200 on the first surface 110 of the substrate 100 is removed, and at this time, only the quantum dot layer 300 between two adjacent photoresist layers 200 is retained, and thus, the line width of the formed quantum dot layer 300 is naturally narrow. Meanwhile, the steps can be repeated according to the use requirement until the use requirement is met. Therefore, the line width and the line distance of the quantum dot layer 300 in the display panel are small, and the display effect is good.
In some embodiments, each time quantum dot layer 300 is formed on an exposed surface formed by the first surface 110 of the substrate 100 and the side surface of the photoresist layer 200 facing away from the substrate 100, the formed quantum dot layer 300 is a quantum dot layer 300 having a single color. That is, each time the quantum dot layer 300 is formed, the quantum dot layer 300 having the same color may be formed, so as to control and adjust the process.
In some embodiments, with continued reference to fig. 2, the height h of each quantum dot layer 300 is the same along a direction perpendicular to the first surface 110 of the substrate 100 (i.e., the first direction z illustrated in fig. 2). Thus, the manufacturing process is convenient to control. In particular to some embodiments, through the steps in some embodiments described above, a quantum dot layer 300 with a height h of 1 to 10 microns can be obtained. In some embodiments, with continued reference to fig. 2, the projection of each quantum dot layer 300 on the first surface 110 is a square, and the side length x of the square is 1 to 10 microns. That is, the line width of the quantum dot layer 300 is 1 to 10 μm. In some embodiments, with continued reference to fig. 2, the distance d between every two adjacent quantum dot layers 300 in the color conversion layer is 3 to 30 microns. Thus, a display panel with high resolution can be obtained.
In some embodiments, with reference to subsequent fig. 3-14, quantum dot layer 300 includes a red quantum dot layer 300a, a green quantum dot layer 300b, and a blue quantum dot layer 300c, respectively, disposed at intervals. The red quantum dot layer 300a has a red quantum dot resist, the green quantum dot layer 300b has a green quantum dot resist, and the blue quantum dot layer 300c has a blue quantum dot resist. In the subsequent process, the substrate 100 is converted into red, green and blue pixels, so as to realize full-color display of the display panel.
It should be understood that the above-described technical solutions can be implemented as independent embodiments in actual implementation, and can also be combined with each other and implemented as a combined embodiment. In addition, when the contents of the embodiments of the present application are described above, the different embodiments are described in a corresponding order based on a convenient explanation, and the execution order between the different embodiments is not limited. Accordingly, in an actual implementation process, if it is required to implement the multiple embodiments provided in the present application, the execution order provided when the embodiments are set forth in the present application is not necessarily required, and the execution order between different embodiments may be arranged according to requirements.
The following describes a method for manufacturing a color conversion layer according to an embodiment of the present application with reference to fig. 3 to 14.
It should be noted that fig. 3 to 14 are schematic structural diagrams of the color conversion layer obtained by the method for manufacturing the color conversion layer in some embodiments at various stages, where fig. 3 to 6 are schematic structural diagrams for forming the red quantum dot layer 300a, fig. 7 to 10 are schematic structural diagrams for forming the green quantum dot layer 300b, and fig. 11 to 14 are schematic structural diagrams for forming the blue quantum dot layer 300 c; for convenience of explanation, only portions related to the embodiments of the present application are shown.
In some embodiments, referring to fig. 3 to 6, first, a plurality of photoresist layers 200 are formed on the first surface 110 of the substrate 100 at intervals, and then, a red quantum dot layer 300a is formed on an exposed surface formed on the first surface 110 of the substrate 100 and a side surface of the photoresist layer 200 facing away from the substrate 100; next, the photoresist layer 200 on the first surface 110 of the substrate 100 is removed to form a plurality of quantum dot layers 300 spaced apart from each other on the first surface 110 of the substrate 100. Referring to fig. 7 to 10, first, a plurality of photoresist layers 200 are formed on the first surface 110 of the substrate 100 at intervals, and the formed plurality of photoresist layers 200 cover the red quantum dot layer 300a on the first surface 110 of the substrate 100; next, a green quantum dot layer 300b is formed on an exposed surface formed by the first surface 110 of the substrate 100 and a surface of the photoresist layer 200 facing away from the substrate 100; next, the photoresist layer 200 on the first surface 110 of the substrate 100 is removed to form a plurality of quantum dot layers 300 spaced apart from each other on the first surface 110 of the substrate 100. At this time, quantum dot layer 300 includes red quantum dot layer 300a and green quantum dot layer 300 b. Referring to fig. 11 to 14, first, a plurality of photoresist layers 200 are formed on the first surface 110 of the substrate 100 at intervals, and the formed plurality of photoresist layers 200 cover the red quantum dot layer 300a and the green quantum dot layer 300b on the first surface 110 of the substrate 100; next, a blue quantum dot layer 300c is formed on an exposed surface formed by the first surface 110 of the substrate 100 and a surface of the photoresist layer 200 facing away from the substrate 100; next, the photoresist layer 200 on the first surface 110 of the substrate 100 is removed to form a plurality of quantum dot layers 300 spaced apart from each other on the first surface 110 of the substrate 100. At this time, quantum dot layer 300 includes red quantum dot layer 300a, green quantum dot layer 300b, and blue quantum dot layer 300 c.
Based on the same inventive concept, the embodiment of the present application further provides a display panel, which includes a substrate 100 and LED chips. The first surface 110 of the substrate 100 has the color conversion layer obtained by the manufacturing method provided by the above embodiment. The LED chip is arranged opposite to the color conversion layer. Thus, a display panel having a good display effect and a high resolution can be obtained.
In some embodiments, the LED chip includes an LED chip for emitting white base light and/or an LED chip for emitting blue base light. Thus, the color conversion layer can be combined to form conversion of three pixels of red, green and blue on the substrate 100, thereby realizing full-color display of the display panel.
In some embodiments, the LED chip is a Micro-LED chip. In other embodiments, the substrate 100 is made of glass or polyimide.
Based on the same inventive concept, the embodiment of the present application further provides a display device, which includes the display panel in the above embodiment. Thus, a display device with good display effect can be obtained.
It should be understood that the display device provided by the above embodiment can be applied to the fields of mobile phone terminals, bionic electronics, electronic skins, wearable devices, vehicle-mounted devices, internet of things devices, artificial intelligence devices, and the like. For example, the display device may be a mobile phone terminal, a tablet, a palmtop, an ipod, a smart watch, a laptop computer, a television, a monitor, or the like. The embodiment of the present application is not particularly limited to this.
In summary, in the method for fabricating a color conversion layer provided in the embodiment of the present application, a plurality of photoresist layers 200 are formed on the first surface 110 of the substrate 100, the photoresist layers 200 are made of a positive photoresist, so that the size of the area occupied by each quantum dot layer 300 can be adjusted when the quantum dot layer 300 is formed, and then the quantum dot layer 300 is formed on the exposed surface formed on the first surface 110 of the substrate 100 and the side surface of the photoresist layer 200 facing away from the substrate 100, and the photoresist layer 200 on the first surface 110 of the substrate 100 is removed, at this time, only the quantum dot layer 300 between two adjacent photoresist layers 200 is remained, and thus, the line width of the formed quantum dot layer 300 is naturally narrow. Meanwhile, the steps can be repeated according to the use requirement until the use requirement is met. Therefore, the line width and the line distance of the quantum dot layer 300 in the display panel are small, and the display effect is good.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (14)
1. A method of making a color conversion layer, comprising the steps of:
forming a plurality of photoresist layers arranged at intervals on the first surface of the substrate; the light resistance layer is made of positive photoresist;
forming a quantum dot layer on an exposed surface formed by the first surface of the substrate and one side surface of the photoresist layer, which is far away from the substrate;
removing the photoresist layer on the first surface of the substrate to form a plurality of quantum dot layers spaced apart from each other on the first surface of the substrate;
repeating the steps of forming the photoresist layer, forming the quantum dot layer and removing the photoresist layer until a preset condition is met to form a color conversion layer;
wherein, every time except for the first time, when a plurality of photoresist layers are formed on the first surface of the substrate at intervals, the formed plurality of photoresist layers cover all the quantum dot layers on the first surface of the substrate.
2. The method for fabricating a color conversion layer according to claim 1, wherein the forming a plurality of light blocking layers spaced apart from each other on the first surface of the substrate comprises:
coating a positive photoresist on the first surface of the substrate to form a photoresist film;
and processing the photoresist film through exposure, development, baking and etching processes to form a plurality of photoresist layers arranged at intervals.
3. The method for fabricating a color conversion layer according to claim 1, wherein the removing the photoresist layer on the first surface of the substrate to form a plurality of quantum dot layers spaced apart from each other on the first surface of the substrate comprises:
treating the surface of the quantum dot layer by a surface modification process to make the surface of the quantum dot layer hydrophilic;
dissolving the photoresist layer on the first surface of the substrate by a hydrophobic solvent.
4. The method of manufacturing a color conversion layer according to claim 1, wherein each time the quantum dot layer is formed on the exposed surface formed by the first surface of the substrate and the side surface of the light blocking layer facing away from the substrate, the quantum dot layer is formed as a quantum dot layer having a single color.
5. The method of fabricating a color conversion layer according to any one of claims 1 to 4, wherein the height of each of the quantum dot layers is the same in a direction perpendicular to the first surface of the substrate.
6. The method of manufacturing a color conversion layer according to claim 5, wherein the quantum dot layer has a height of 1 to 10 μm.
7. The method of fabricating a color conversion layer according to any one of claims 1 to 4, wherein a projection of each of the quantum dot layers on the first surface is a square, and a side of the square is 1 to 10 μm.
8. The color conversion layer fabrication method according to any one of claims 1 to 4, wherein a distance between each two adjacent quantum dot layers in the color conversion layer is 3 to 30 micrometers.
9. The method for manufacturing a color conversion layer according to any one of claims 1 to 4, wherein the quantum dot layer comprises a red quantum dot layer, a green quantum dot layer and a blue quantum dot layer which are separately provided;
the red quantum dot layer is provided with a red quantum dot light resistor, the green quantum dot layer is provided with a green quantum dot light resistor, and the blue quantum dot layer is provided with a blue quantum dot light resistor.
10. A display panel, comprising:
a substrate having a color conversion layer obtained by the production method according to any one of claims 1 to 9 on a first surface thereof; and
an LED chip disposed opposite the color conversion layer.
11. The display panel according to claim 10, wherein the LED chip comprises an LED chip for emitting white base light and/or an LED chip for emitting blue base light.
12. The display panel of claim 10, wherein the LED chip is a Micro-LED chip.
13. The display panel according to claim 10, wherein a material of the substrate is glass or polyimide.
14. A display device characterized by comprising the display panel according to any one of claims 10 to 13.
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